Catalogo Articoli (Spogli Riviste)

HELP
ATTENZIONE: attualmente gli articoli Current Contents (fonte ISI) a partire dall'anno 2002 sono consultabili sulla Risorsa On-Line

Le informazioni sugli articoli di fonte ISI sono coperte da copyright

La ricerca find articoli where soggetti phrase all words 'EPILAYERS' sort by level,fasc_key/DESCEND, pagina_ini_num/ASCEND ha restituito 363 riferimenti
Si mostrano 100 riferimenti a partire da 1
Selezionare un intervallo

Per ulteriori informazioni selezionare i riferimenti di interesse.

    1. As, DJ; Kohler, U
      Carbon - an alternative acceptor for cubic GaN

      JOURNAL OF PHYSICS-CONDENSED MATTER
    2. Bahng, JH; Kim, KJ; Ihm, SH; Kim, JY; Park, HL
      Evolution of optical constants and electronic structure of disordered Si1-xGex alloys

      JOURNAL OF PHYSICS-CONDENSED MATTER
    3. Longo, M; Parisini, A; Tarricone, L; Toni, L; Kudela, R
      Photoluminescence investigation of superlattice ordering in organometallicvapour phase epitaxy grown InGaP layers

      MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY
    4. O'Donnell, KP; Martin, RW; Trager-Cowan, C; White, ME; Esona, K; Deatcher, C; Middleton, PG; Jacobs, K; Van der Stricht, W; Merlet, C; Gil, B; Vantomme, A; Mosselmans, JFW
      The dependence of the optical energies on InGaN composition

      MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY
    5. Gwilliam, RM; Knights, AP; Wendler, E; Sealy, BJ; Burrows, CP; Coleman, PG
      Development of a novel tool for semiconductor process control

      MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY
    6. Bajaj, KK
      Use of excitons in materials characterization of semiconductor systems

      MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY
    7. Butcher, KSA; Tansley, TL; Prince, K; Leech, PW
      Predeposition ultraviolet treatment for adhesion improvement of thin filmson mercury cadmium telluride

      JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS
    8. Weiss, E; Klin, O; Benory, E; Kedar, E; Juravel, Y
      Substrate quality impact on the carrier concentration of undoped annealed HgCdTe LPE layers

      JOURNAL OF ELECTRONIC MATERIALS
    9. Affentauschegg, C; Wieder, HH
      Properties of InAs/InAlAs heterostructures

      SEMICONDUCTOR SCIENCE AND TECHNOLOGY
    10. Jain, SC; Decoutere, S; Willander, M; Maes, HE
      SiGeHBT for application in BiCMOS technology: II. Design, technology and performance

      SEMICONDUCTOR SCIENCE AND TECHNOLOGY
    11. Kacman, P
      Spin interactions in diluted magnetic semiconductors and magnetic semiconductor structures

      SEMICONDUCTOR SCIENCE AND TECHNOLOGY
    12. Yu, YM; Nam, S; O, B; Lee, KS; Choi, YD; Lee, J; Yu, PY
      Variation of band gap energy and photoluminescence characteristics with Tecomposition of ZnS1-xTex epilayers grown by hot-wall epitaxy

      APPLIED SURFACE SCIENCE
    13. Kang, TW; Park, CS; Kim, TW
      The origins of the DX center formation in unintentionally doped GaN epilayers grown on sapphire substrates

      APPLIED SURFACE SCIENCE
    14. Navamathavan, R; Arivuoli, D; Attolini, G; Pelosi, C
      Nanoindentation studies of (111) GaAs/InP epilayers

      APPLIED SURFACE SCIENCE
    15. Barfels, T; Fitting, HJ; Jansons, J; Tale, I; Veispals, A; von Czarnowski, A; Wulff, H
      Structure and luminescence of GaN layers

      APPLIED SURFACE SCIENCE
    16. Matsumoto, T; Souno, Y; Tatsuoka, H; Nakanishi, Y; Kuwabara, H
      Structural properties of zinc-blende MnTe layers grown by hot-wall epitaxy

      APPLIED SURFACE SCIENCE
    17. Gil, B
      Oscillator strengths of A, B, and C excitons in ZnO films - art. no. 201310

      PHYSICAL REVIEW B
    18. Davies, JJ; Wolverson, D; Strauf, S; Michler, P; Gutowski, J; Klude, M; Ohkawa, K; Hommel, D; Tournie, E; Faurie, JP
      Direct evidence for the trigonal symmetry of shallow phosphorus acceptors in ZnSe - art. no. 205206

      PHYSICAL REVIEW B
    19. Herper, HC; Weinberger, P; Vernes, A; Szunyogh, L; Sommers, C
      Electric transport in Fe/ZnSe/Fe heterostructures - art. no. 184442

      PHYSICAL REVIEW B
    20. Wang, FH; Kruger, P; Pollmann, J
      Electronic structure of 1X1 GaN(0001) and GaN(000(1)over-bar) surfaces - art. no. 035305

      PHYSICAL REVIEW B
    21. Shields, PA; Nicholas, RJ; Grandjean, N; Massies, J
      Magnetophotoluminescence of GaN/AlxGa1-xN quantum wells: Valence band reordering and excitonic binding energies - art. no. 245319

      PHYSICAL REVIEW B
    22. Dietl, T; Ohno, H; Matsukura, F
      Hole-mediated ferromagnetism in tetrahedrally coordinated semiconductors -art. no. 195205

      PHYSICAL REVIEW B
    23. Bayerl, MW; Brandt, MS; Graf, T; Ambacher, O; Majewski, JA; Stutzmann, M; As, DJ; Lischka, K
      g values of effective mass donors in AlxGa1-xN alloys - art. no. 165204

      PHYSICAL REVIEW B
    24. Kuskovsky, IL; Tian, C; Neumark, GF; Spanier, JE; Herman, IP; Lin, WC; Guo, SP; Tamargo, MC
      Optical properties of delta-doped ZnSe : Te grown by molecular beam epitaxy: The role of tellurium - art. no. 155205

      PHYSICAL REVIEW B
    25. Kveder, V; Kittler, M; Schroter, W
      Recombination activity of contaminated dislocations in silicon: A electron-beam-induced current contrast behavior - art. no. 115208

      PHYSICAL REVIEW B
    26. Ryu, MY; Yu, PW; Oh, E; Sone, C; Nam, O; Park, Y
      Optical properties and recombination dynamics of InGaN/GaN multiple quantum wells with Si-doped barriers

      SOLID STATE COMMUNICATIONS
    27. Liem, NQ; Quang, VX; Thanh, DX; Lee, JI; Kim, D
      Temperature dependence of biexciton luminescence in cubic ZnS single crystals

      SOLID STATE COMMUNICATIONS
    28. O'Donnell, KP
      A mystery wrapped in an enigma: Optical properties of InGaN alloys

      PHYSICA STATUS SOLIDI A-APPLIED RESEARCH
    29. Szyszko, T; Kamler, G; Strojek, B; Weisbrod, G; Podsiadlo, S; Adamowicz, L; Gebicki, W; Szczytko, J; Twardowski, A; Sikorski, K
      Growth of bulk Ga1-xMnxN single crystals

      JOURNAL OF CRYSTAL GROWTH
    30. Yang, Y; Shen, DZ; Zhang, JY; Fan, XW; Li, BS; Lu, YM; Liu, YC; Liu, YN
      The formation mechanism of self-assembled CdSe quantum dots

      JOURNAL OF CRYSTAL GROWTH
    31. Pereira, S; Correia, MR; Monteiro, T; Pereira, E; Soares, MR; Alves, E
      Indium content determination related with structural and optical properties of InGaN layers

      JOURNAL OF CRYSTAL GROWTH
    32. Kang, JY; Tsunekawa, S; Shen, B; Mai, ZH; Wang, CY; Tsuru, T; Kasuya, A
      Nanopipes in undoped AlGaN epilayers

      JOURNAL OF CRYSTAL GROWTH
    33. Saks, NS; Agarwal, AK; Ryu, SH; Palmour, JW
      Low-dose aluminum and boron implants in 4H and 6H silicon carbide

      JOURNAL OF APPLIED PHYSICS
    34. Mosca, DH; Abbate, M; Schreiner, WH; Etgens, VH; Eddrief, M
      Photoemission study of the solid-state interdiffusion in hybrid Fe/ZnSe/GaAs(001) heterostructures

      JOURNAL OF APPLIED PHYSICS
    35. Wang, XJ; Huang, DM; Sheng, CX; Yu, GC
      Thickness dependence of exciton and polariton spectra from ZnSe films grown on GaAs substrates

      JOURNAL OF APPLIED PHYSICS
    36. Xu, XL; Liu, HT; Shi, CS; Zhao, YW; Fung, S; Beling, CD
      Residual donors and compensation in metalorganic chemical vapor depositionas-grown n-GaN

      JOURNAL OF APPLIED PHYSICS
    37. Lin, HM; Chen, YF; Shen, JL; Chou, WC
      Dielectric studies of Cd1-x-yZnxMnyTe crystals

      JOURNAL OF APPLIED PHYSICS
    38. Oh, E; Lee, MH; Kim, KJ; Ryu, MY; Song, JH; Park, SW; Yu, PW; Park, H; Park, Y
      Cathodoluminescence study of InxGa1-xN quantum wells

      JOURNAL OF APPLIED PHYSICS
    39. Chichibu, SF; Azuhata, T; Sota, T; Mukai, T
      Localized excitons in an In0.06Ga0.94N multiple-quantum-well laser diode lased at 400 nm

      APPLIED PHYSICS LETTERS
    40. Haffouz, S; Kirilyuk, V; Hageman, PR; Macht, L; Weyher, JL; Larsen, PK
      Improvement of the optical properties of metalorganic chemical vapor deposition grown GaN on sapphire by an in situ SiN treatment

      APPLIED PHYSICS LETTERS
    41. Zajaac, M; Gosk, J; Kaminska, M; Twardowski, A; Szyszko, T; Podsiadlo, S
      Paramagnetism and antiferromagnetic d-d coupling in GaMnN magnetic semiconductor

      APPLIED PHYSICS LETTERS
    42. Jursenas, S; Kurilcik, N; Kurilcik, G; Zukauskas, A; Prystawko, P; Leszcynski, M; Suski, T; Perlin, P; Grzegory, I; Porowski, S
      Decay of stimulated and spontaneous emission in highly excited homoepitaxial GaN

      APPLIED PHYSICS LETTERS
    43. Liu, MS; Prawer, S; Bursill, LA; As, DJ; Brenn, R
      Characterization of the surface irregularities of cubic GaN using micro-Raman spectroscopy

      APPLIED PHYSICS LETTERS
    44. Pereira, S; Correia, MR; Monteiro, T; Pereira, E; Alves, E; Sequeira, AD; Franco, N
      Compositional dependence of the strain-free optical band gap in InxGa1-xN layers

      APPLIED PHYSICS LETTERS
    45. Gil, B; Lusson, A; Sallet, V; Said-Hassani, SA; Triboulet, R; Bigenwald, P
      Strain-fields effects and reversal of the nature of the fundamental valence band of ZnO epilayers

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS
    46. Krier, A; Gao, HH; Sherstnev, VV
      Investigation of rare earth gettering for the fabrication of improved mid-infrared LEDs

      IEE PROCEEDINGS-OPTOELECTRONICS
    47. Gurskii, AL; Rakovich, YP; Lutsenko, EV; Gladyshchuk, AA; Yablonskii, GP; Hamadeh, H; Heuken, M
      Free-exciton spectra in heteroepitaxial ZnSe/GaAs layers

      PHYSICAL REVIEW B
    48. Vantomme, A; Wu, MF; Hogg, S; Langouche, G; Jacobs, K; Moerman, I; White, ME; O'Donnell, KP; Nistor, L; Van Landuyt, J; Bender, H
      Comparative study of structural properties and photoluminescence in InGaN layers with a high In content

      MRS INTERNET JOURNAL OF NITRIDE SEMICONDUCTOR RESEARCH
    49. Cordier, Y; Chauveau, JM; Ferre, D; Dipersio, J
      Comparison of In0.33Al0.67As/In0.34Ga0.66As on GaAs metamorphic high electron mobility transistors grown by molecular beam epitaxy with normal and inverse step on linear graded buffer layers

      JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B
    50. Zaitsev, VV; Bagaev, VS; Onishchenko, EE; Sadof'ev, YG
      Investigation of free and bound excitons in strained ZnTe films grown by MBE on GaAs(100) substrates

      PHYSICS OF THE SOLID STATE
    51. Ankudinov, AV; Dunaevskii, MS; Marushchak, VA; Titkov, AN; Ivanov, SV; Sorokin, SV; Shubina, TV; Kop'ev, PS; Waag, A; Landwehr, G
      Morphology of (001) and (110) surfaces of crystal layers in solid solutions of II-VI compounds with a high ZnSe content under atmospheric conditions

      PHYSICS OF THE SOLID STATE
    52. Venger, EF; Sadof'ev, YG; Semenova, GN; Korsunskaya, NE; Klad'ko, VP; Semtsiv, MP; Borkovskaya, LV
      Emission associated with extended defects in epitaxial ZnTe/GaAs layers and multilayer structures

      SEMICONDUCTORS
    53. Mainzer, N; Zolotoyabko, E
      Point defects and their diffusion in mercury cadmium telluride: Investigation based upon high-resolution x-ray diffraction

      DEFECTS AND DIFFUSION IN SEMICONDUCTORS
    54. Fung, KK; Wang, N
      Transmission electron microscopic study of intersecting stacking faults inZnSe/GaAs(001) epilayers and (SiGe)/Si(001) multilayers

      DEFECTS AND DIFFUSION IN SEMICONDUCTORS
    55. Li, ZF; Lu, W; Ye, HJ; Yuan, XZ; Shen, XC; Li, G; Chua, SJ
      Optical spectroscopy study on carrier concentration and mobility in GaN

      ACTA PHYSICA SINICA
    56. Higgs, V; Chin, F; Wang, X; Mosalski, J; Beanland, R
      Photoluminescence characterization of defects in Si and SiGe structures

      JOURNAL OF PHYSICS-CONDENSED MATTER
    57. Wolkenberg, A; Przeslawski, T; Kaniewski, J; Bak-Misiuk, J; Reginski, K
      Thickness dependence of the structural and electrical properties of InAs layers epitaxially grown by MBE on GaAs (001)

      MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY
    58. Meyer, BK; Hofmann, DM; Alves, H
      Defects and defect identification in group III-nitrides

      MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY
    59. Twardowski, A
      Diluted magnetic III-V semiconductors

      ACTA PHYSICA POLONICA A
    60. Kruger, O; Seifert, W; Kittler, M; Vyvenko, OF
      Extension of hydrogen passivation of intragrain defects and grain boundaries in cast multicrystalline silicon

      PHYSICA STATUS SOLIDI B-BASIC RESEARCH
    61. Mainzer, N; Zolotoyabko, E
      Percolation problem in boron - Implanted mercury cadmium telluride

      JOURNAL OF ELECTRONIC MATERIALS
    62. Tawara, T; Tanaka, S; Kumano, H; Suemune, I
      Origin of size distributions in ZnSe self-organized quantum dots grown on ZnS layers

      JOURNAL OF ELECTRONIC MATERIALS
    63. Xie, ZY; Wei, CH; Chen, SF; Jiang, SY; Edgar, JH
      Surface etching of 6H-SiC (0001) and surface morphology of the subsequently grown GaN via MOCVD

      JOURNAL OF ELECTRONIC MATERIALS
    64. Gurskii, AL; Hamadeh, H; Korfer, H; Yablonskii, GP; Zelenkovskii, VM; Bezjazychnaja, TV; Heuken, M; Heime, K
      Reconstruction of excitonic spectrum during annealing of ZnSe : N grown bymetalorganic vapor phase epitaxy

      JOURNAL OF ELECTRONIC MATERIALS
    65. Capano, MA; Santhakumar, R; Venugopal, R; Melloch, MR; Cooper, JA
      Phosphorus implantation into 4H-silicon carbide

      JOURNAL OF ELECTRONIC MATERIALS
    66. Zhang, JP; Wang, XL; Sun, DZ; Kong, MY
      Hydrogen-dependent lattice dilation in GaN

      SEMICONDUCTOR SCIENCE AND TECHNOLOGY
    67. Sallet, V; Lusson, A; Tromson-Carli, A; Riviere, A; Riviere, JP; Rommeluere, JF; Marfaing, Y
      Optical properties of CdS layers grown by MOVPE on (211)B and (100) GaAs

      SEMICONDUCTOR SCIENCE AND TECHNOLOGY
    68. Cordier, Y; Ferre, D; Chauveau, JM; Dipersio, J
      Surface morphology and strain relaxation of InAlAs buffer layers grown lattice mismatched on GaAs with inverse steps

      APPLIED SURFACE SCIENCE
    69. Lorenz, K; Vianden, R; Birkhahn, R; Steckl, AJ; da Silva, MF; Soares, JC; Alves, E
      RBS/channeling study of Er doped GaN films grown by MBE on Si(111) substrates

      NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS
    70. Zou, LF; Acosta-Ortiz, SE; Regalado, LE; Zou, LX
      Damage removal and defect control in As ion implanted Si1-xGex epilayers during a high-temperature annealing process

      MICROELECTRONIC ENGINEERING
    71. Wetzel, C; Takeuchi, T; Amano, H; Akasaki, I
      Quantized states in Ga1-xInxN/GaN heterostructures and the model of polarized homogeneous quantum wells

      PHYSICAL REVIEW B
    72. Boselli, MA; Ghazali, A; Lima, ICD
      Ferromagnetism and canted spin phase in AlAs/Ga1-xMnxAs single quantum wells: Monte Carlo simulation

      PHYSICAL REVIEW B
    73. Shalish, I; Kronik, L; Segal, G; Shapira, Y; Zamir, S; Meyler, B; Salzman, J
      Grain-boundary-controlled transport in GaN layers

      PHYSICAL REVIEW B
    74. Satake, A; Masumoto, Y; Miyajima, T; Asatsuma, T; Hino, T
      Ultraviolet anti-Stokes photoluminescence in InxGa1-xN/GaN quantum-well structures

      PHYSICAL REVIEW B
    75. Pavlov, KM; Punegov, VI
      Statistical dynamical theory of X-ray diffraction in the Bragg case: application to triple-crystal diffractometry

      ACTA CRYSTALLOGRAPHICA SECTION A
    76. Venger, EF; Sadof'ev, YG; Semenova, GN; Korsunskaya, NE; Klad'ko, VP; Shechovtsov, LV; Semtsiv, MP; Borkovskaya, LV; Sapko, SY
      Lateral and depth inhomogeneities in Zn-based heterostructures grown on GaAs by MBE

      THIN SOLID FILMS
    77. Przeslawski, T; Wolkenberg, A; Reginski, K; Kaniewski, J; Bak-Misiuk, J
      Growth and transport properties of relaxed epilayers of InAs on GaAs

      THIN SOLID FILMS
    78. Rakovich, Y; Bryja, L; Ciorga, M; Misiewicz, J; Heuken, M; Heime, K; Yablonskii, GP
      Effect of above band-gap illumination on structure of free exciton reflection spectra of ZnSe

      THIN SOLID FILMS
    79. Zaknoune, M; Cordier, Y; Bollaert, S; Ferre, D; Theron, D; Crosnier, Y
      0.1-mu m high performance double heterojunction In0.32Al0.68As/In0.33Ga0.67As metamorphic HEMTs on GaAs

      SOLID-STATE ELECTRONICS
    80. Yousaf, M; Sands, D; Scott, CG
      The formation of stable ohmic contacts to MBE grown CdTe layers

      SOLID-STATE ELECTRONICS
    81. Hou, YT; Feng, ZC; Chen, J; Zhang, X; Chua, SJ; Lin, JY
      Correlation between the infrared reflectance and microstructure of thin gallium nitride films grown on silicon substrates

      SOLID STATE COMMUNICATIONS
    82. Lee, MH; Kim, KJ; Oh, E
      Ellipsometric investigation of optical constant and band gap of Ga1-xInxN/GaN (x <= 0.12) heterostructures

      SOLID STATE COMMUNICATIONS
    83. Oh, E; Park, H; Sone, C; Nam, O; Park, Y; Kim, T
      Micro-photoluminescence study of InxGa1-xN/GaN quantum wells

      SOLID STATE COMMUNICATIONS
    84. Kudo, H; Tanabe, T; Ishibashi, H; Zheng, R; Yamada, Y; Taguchi, T
      Radiative recombination dynamics of carriers in InxGa1-xN epitaxial layersrevealed by temperature dependence of time-resolved photoluminescence spectra

      PHYSICA STATUS SOLIDI A-APPLIED RESEARCH
    85. Liu, HX; Ye, ZZ; Zhang, HX; Zhao, BH
      Wurtzite GaN epitaxial growth on Si(111) using silicon nitride as an initial layer

      MATERIALS RESEARCH BULLETIN
    86. Kudo, H; Ishibashi, H; Zheng, RS; Yamada, Y; Taguchi, T; Nakamura, S; Shinomiya, G
      Ultraviolet emission properties in InxGa1-xN epitaxial layer revealed by magnetoluminescence and time-resolved luminescence studies

      JOURNAL OF LUMINESCENCE
    87. Seitz, R; Gaspar, C; Correia, M; Monteiro, T; Pereira, E; Heuken, M; Schoen, O
      Steady-state and time-resolved luminescence in InGaN layers

      JOURNAL OF LUMINESCENCE
    88. Wolfframm, D; Evans, DA; Westwood, DI; Riley, J
      A detailed surface phase diagram for ZnSe MBE growth and ZnSe/GaAs(001) interface studies

      JOURNAL OF CRYSTAL GROWTH
    89. Chen, NT; Yokoyama, M; Ueng, HY
      Atomic layer epitaxy growth of ZnSxSe1-x epitaxial layers lattice-matched to Si substrates

      JOURNAL OF CRYSTAL GROWTH
    90. Zhang, JY; Shen, DZ; Fan, XW; Yang, BJ; Zheng, ZH
      ZnBeSe epitaxy layers grown by photo-assisted metalorganic chemical vapor deposition

      JOURNAL OF CRYSTAL GROWTH
    91. Makino, H; Sasaki, H; Chang, JH; Yao, T
      Raman investigation of Zn1-xMgxSe1-yTey quaternary alloys grown by molecular beam epitaxy

      JOURNAL OF CRYSTAL GROWTH
    92. Song, JH; Sim, ED; Baek, KS; Chang, SK
      Optical properties of ZnSxSe1-x (x < 0.18) random and ordered alloys grownby metalorganic atomic layer epitaxy

      JOURNAL OF CRYSTAL GROWTH
    93. Gurskii, AL; Voitikov, SV; Hamadeh, H; Kalisch, H; Heuken, M; Heime, K
      The role of impurity bands and electron-phonon interaction in formation ofnear-band-edge PL spectra of compensated ZnSe

      JOURNAL OF CRYSTAL GROWTH
    94. Matsumura, N; Kimura, Y; Endo, H; Saraie, J
      Self-assembling CdTe quantum dots on ZnSe by alternate supplying and molecular beam epitaxial method

      JOURNAL OF CRYSTAL GROWTH
    95. Wen, CY; Guo, XJ; Huang, JH; Shih, HC
      Determination of the three-dimensional crystallographic misorientation in heterostructures by selected area diffraction (SAD) in cross-sectional TEM

      JOURNAL OF CRYSTAL GROWTH
    96. Reverchon, JL; Huet, F; Poisson, MA; Duboz, JY
      Photoconductance measurements on thin InGaN layers

      JOURNAL OF APPLIED PHYSICS
    97. Balasubramanian, S; Nolte, DD; Melloch, MR
      Enhanced diffusion in laser-annealed nonstoichiometric AlAs/GaAs heterostructures

      JOURNAL OF APPLIED PHYSICS
    98. Holtz, M; Duncan, WM; Zollner, S; Liu, R
      Visible and ultraviolet Raman scattering studies of Si1-xGex alloys

      JOURNAL OF APPLIED PHYSICS
    99. Hsueh, CH
      Analyses of edge effects on residual stresses in film strip/substrate systems

      JOURNAL OF APPLIED PHYSICS
    100. Stumpe, LE; Rhyne, JJ; Kaiser, H; Lee, S; Bindley, U; Furdyna, JK
      Enhancement of spin correlations in ZnTe/MnTe superlattices by Cl doping

      JOURNAL OF APPLIED PHYSICS


ASDD Area Sistemi Dipartimentali e Documentali, Università di Bologna, Catalogo delle riviste ed altri periodici
Documento generato il 25/10/20 alle ore 01:02:18