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La ricerca find articoli where soggetti phrase all words 'DRAM' sort by level,fasc_key/DESCEND, pagina_ini_num/ASCEND ha restituito 335 riferimenti
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    1. Panda, PR; Catthoor, F; Dutt, ND; Danckaert, K; Brockmeyer, E; Kulkarni, C; Vandercappelle, A; Kjeldsberg, PG
      Data and memory optimization techniques for embedded systems

      ACM TRANSACTIONS ON DESIGN AUTOMATION OF ELECTRONIC SYSTEMS
    2. Kim, H; Park, IC
      High-performance and low-power memory-interface architecture for video processing applications

      IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS FOR VIDEO TECHNOLOGY
    3. Mori, H; Hirao, T; Onoda, S; Itoh, H; Okada, S; Okamoto, T; Koizumi, Y
      Profiling of collimated swift ion microbeam using 16 M bit DRAM

      RADIATION PHYSICS AND CHEMISTRY
    4. Berger, S
      Microstructure evolution of nanometer-sized hemispherical-grained Si deposited by RTCVD

      MATERIALS SCIENCE & ENGINEERING C-BIOMIMETIC AND SUPRAMOLECULAR SYSTEMS
    5. Vollrath, J; Lederer, U; Hladschik, T
      Compressed bit fail maps for memory fail pattern classification

      JOURNAL OF ELECTRONIC TESTING-THEORY AND APPLICATIONS
    6. Fujisawa, H; Sakata, T; Sekiguchi, T; Torii, K; Kimura, K; Kajigaya, K
      A high-endurance read/write scheme for half-V-cc plate nonvolatile DRAMs with ferroelectric capacitors

      IEICE TRANSACTIONS ON ELECTRONICS
    7. Shyu, YS; Wu, JC
      A 60 mu A quiscent current, 250 mA CMOS low dropout regulator

      IEICE TRANSACTIONS ON ELECTRONICS
    8. Saida, S; Sato, T; Sato, M; Kito, M
      Embedded trench DRAMs for sub-0.10-mu m generation by using hemispherical-grain technique and LOCOS collar process

      IEEE TRANSACTIONS ON SEMICONDUCTOR MANUFACTURING
    9. Fujii, K; Tanaka, Y; Suzuki, K; Iwamoto, T; Tsuboi, S; Matsui, Y
      Overlay and critical dimension control in proximity x-ray lithography

      NEC RESEARCH & DEVELOPMENT
    10. Kim, SB; Min, BJ; Kim, DP; Kim, CI
      Effects of BCl3 addition in Cl-2/Ar plasma etching of (Ba,Sr)TiO3 thin films

      JOURNAL OF THE KOREAN PHYSICAL SOCIETY
    11. Lee, CH; Lee, TY
      Preparation and properties of rf sputtered Pb(Mg1/3Ta2/3)O-3 thin films

      MATERIALS CHEMISTRY AND PHYSICS
    12. Bialas, F; Winkler, R; Dietrich, H
      Intrinsic gettering of 300 mm CZ wafers

      MICROELECTRONIC ENGINEERING
    13. Son, JH; Lee, SH; Lee, JS; Lee, Y
      Channel engineering using RTA prior to the gate oxidation for high densityDRAM with single gate CMOS technology

      SOLID-STATE ELECTRONICS
    14. Atanassova, E; Paskaleva, A; Konakova, R; Spassov, D; Mitin, VF
      Influence of gamma radiation on thin Ta2O5-Si structures

      MICROELECTRONICS JOURNAL
    15. Endoh, T; Suzuki, M; Sakuraba, H; Masuoka, F
      2.4F(2) memory cell technology with stacked-surrounding gate transistor (S-SGT) DRAM

      IEEE TRANSACTIONS ON ELECTRON DEVICES
    16. Cuppu, V; Jacob, B; Davis, B; Mudge, T
      High-performance DRAMs in workstation environments

      IEEE TRANSACTIONS ON COMPUTERS
    17. Lin, WF; Reinhardt, SK; Burger, D
      Designing a modern memory hierarchy with hardware prefetching

      IEEE TRANSACTIONS ON COMPUTERS
    18. Frank, DJ; Dennard, RH; Nowak, E; Solomon, PM; Taur, Y; Wong, HSP
      Device scaling limits of Si MOSFETs and their application dependencies

      PROCEEDINGS OF THE IEEE
    19. Kozyrakis, C; Judd, D; Gebis, J; Williams, S; Patterson, D; Yelick, K
      Hardware/compiler codevelopment for an embedded media processor

      PROCEEDINGS OF THE IEEE
    20. Fujisawa, H; Takahashi, T; Nakamura, M; Kajigaya, K
      A dual-phase-controlled dynamic latched amplifier for high-speed and low-power DRAMs

      IEEE JOURNAL OF SOLID-STATE CIRCUITS
    21. Kyung, KH; Lee, HC; Song, KW; Song, HS; Jung, K; Moon, JS; Kim, BS; Cho, SB; Kim, C; Cho, SI
      A 2.5-V 2.0-Gbyte/s 288-Mb packet-based DRAM with enhanced cell efficiencyand noise immunity

      IEEE JOURNAL OF SOLID-STATE CIRCUITS
    22. Wang, SH; Kim, J; Lee, J; Nam, HS; Kim, YG; Shim, JH; Ahn, HK; Kang, S; Jeong, BH; Ahn, JH; Kim, B
      A 500-Mb/a quadruple data rate SDRAM interface using a skew cancellation technique

      IEEE JOURNAL OF SOLID-STATE CIRCUITS
    23. Yokoyama, Y; Itoh, N; Hasegawa, M; Katayama, M; Akasaki, H; Kaneda, N; Ueda, T; Tanaka, Y; Yamasaki, E; Todokoro, M; Toriyama, K; Miki, H; Yagyu, M; Takashima, K; Kobayashi, T; Miyaoka, S; Tamba, N
      A 1.8-V embedded 18-Mb DRAM macro with a 9-ns RAS access time and memory-cell area efficiency of 33%

      IEEE JOURNAL OF SOLID-STATE CIRCUITS
    24. Takahashi, T; Sekiguchi, T; Takemura, R; Narui, S; Fujisawa, H; Miyatake, S; Morino, M; Arai, K; Yamada, S; Shukuri, S; Nakamura, M; Tadaki, Y; Kajigaya, K; Kimura, K; Itoh, K
      A multigigabit DRAM technology with 6F(2) open-bitline cell, distributed overdriven sensing, and stacked-flash fuse

      IEEE JOURNAL OF SOLID-STATE CIRCUITS
    25. Tomishima, S; Tsuji, T; Kawasaki, T; Ishikawa, M; Inokuchi, T; Kato, H; Tanizaki, H; Abe, W; Shibayama, A; Fukushima, Y; Niiro, M; Maruta, M; Uchikoba, T; Senoh, M; Sakamoto, S; Ooishi, T; Kikukawa, H; Hidaka, L; Takahashi, K
      A 1.0-V 230-MHz column access embedded DRAM for portable MPEG applications

      IEEE JOURNAL OF SOLID-STATE CIRCUITS
    26. Yoon, CW; Woo, R; Kook, J; Lee, SJ; Lee, K; Yoo, HJ
      An 80/20-MHz 160-mW multimedia processor integrated with embedded DRAM, MPEG-4 accelerator, and 3-D rendering engine for mobile applications

      IEEE JOURNAL OF SOLID-STATE CIRCUITS
    27. Yamamoto, T; Gotoh, SI; Takahashi, T; Irie, K; Ohshima, K; Mimura, N; Aida, K; Maeda, T; Sushihara, K; Okamoto, Y; Tai, Y; Usui, M; Nakajima, T; Ochi, T; Komichi, K; Matsuzawa, A
      A mixed-signal 0.18-mu m CMOS SoC for DVD systems with 432-MSample/s PRML read channel and 16-Mb embedded DRAM

      IEEE JOURNAL OF SOLID-STATE CIRCUITS
    28. Dehng, GK; Lin, JW; Liu, SI
      A fast-lock mixed-mode DLL using a 2-b SAR algorithm

      IEEE JOURNAL OF SOLID-STATE CIRCUITS
    29. Yamauchi, T; Kinoshita, M; Amano, T; Dosaka, K; Arimoto, K; Ozaki, H; Yamada, M; Yoshihara, T
      Design methodology of embedded DRAM with virtual-socket architecture

      IEEE JOURNAL OF SOLID-STATE CIRCUITS
    30. Park, SS; Yoon, SG
      Structure and electrical properties of sputter deposited (Ba1-x,Sr-x) (Ti1-y,Zr-y)O-3 thin films

      JOURNAL OF THE ELECTROCHEMICAL SOCIETY
    31. Black, CT; Guarini, KW; Milkove, KR; Baker, SM; Russell, TP; Tuominen, MT
      Integration of self-assembled diblock copolymers for semiconductor capacitor fabrication

      APPLIED PHYSICS LETTERS
    32. Dey, SK; Majhi, P; Shin, YW; Tang, D; Kirby, A; Zhao, J; Dornfest, C; Lou, L; Kher, S
      Sub-300 angstrom (Ba-x,Sr1-x)TiO3 films by metal organic chemical vapor deposition: Nanostructure, step coverage, and dielectric properties

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
    33. Yamamuka, M; Kawahara, T; Tarutani, M; Horikawa, T; Shibano, T; Oomori, T
      Measurement of atomic incorporation rates and modeling of surface reactions in (Ba, Sr)TiO3 films prepared by a liquid source chemical vapor deposition

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
    34. Kikuchi, Y; Matsui, Y
      Capability of 70 nm pattern replication in X-ray lithography

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
    35. Joo, JH; Kim, WD; Jeong, YK; Won, SJ; Park, SY; Yoo, CY; Kim, ST; Moon, JT
      Rugged metal electrode (RME) for high density memory devices

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS
    36. Lindner, J; Schumacher, M; Dauelsberg, M; Schienle, F; Miedl, S; Burgess, D; Merz, E; Strauch, G; Juergensen, H
      Deposition of electroceramic thin films by MOCVD

      ADVANCED MATERIALS FOR OPTICS AND ELECTRONICS
    37. Chang, SH; Kim, BS; Kim, LS
      A programmable 3.2-GOPS merged DRAM logic for video signal processing

      IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS FOR VIDEO TECHNOLOGY
    38. Inoue, K; Kai, K; Murakami, K
      Dynamically variable line-size cache architecture for merged DRAM/Logic LSIs

      IEICE TRANSACTIONS ON INFORMATION AND SYSTEMS
    39. Inoue, K; Abe, H; Mori, K; Fukagawa, S
      A low-voltage 42.4 G-BPS single-ended read-modify-write bus and programmable page-sire on a 3D frame-buffer

      IEICE TRANSACTIONS ON ELECTRONICS
    40. Inoue, K; Kai, K; Murakami, K
      A high-performance/low-power on-chip memory-path architecture with variable cache-line size

      IEICE TRANSACTIONS ON ELECTRONICS
    41. Kobayashi, K; Yamaoka, M; Kobayashi, Y; Onodera, H; Tamaru, K
      Architecture and performance evaluation of a new functional memory: Functional memory for addition

      IEICE TRANSACTIONS ON FUNDAMENTALS OF ELECTRONICS COMMUNICATIONS AND COMPUTER SCIENCES
    42. Wong, AK; Ferguson, R; Mansfield, S; Molless, A; Samuels, D; Schuster, R; Thomas, A
      Level-specific lithography optimization for 1-Gb DRAM

      IEEE TRANSACTIONS ON SEMICONDUCTOR MANUFACTURING
    43. Satoh, S; Tosaka, Y; Wender, SA
      Geometric effect of multiple-bit soft errors induced by cosmic ray neutrons on DRAM's

      IEEE ELECTRON DEVICE LETTERS
    44. Isa, S; Takai, Y; Fujita, M; Nagata, K; Nakazawa, S; Hirobe, A
      A 1Gbit DDR-SDRAM

      NEC RESEARCH & DEVELOPMENT
    45. Yang, WS; Kim, YK; Yang, SY; Choi, JH; Park, HS; Lee, SI; Yoo, JB
      Effect of SiO2 intermediate layer on Al2O3/SiO2/n(+)-poly Si interface deposited using atomic layer deposition (ALD) for deep submicron device applications

      SURFACE & COATINGS TECHNOLOGY
    46. Ezhilvalavan, S; Tseng, TY
      Progress in the developments of (Ba,Sr)TiO3 (BST) thin films for Gigabit era DRAMs

      MATERIALS CHEMISTRY AND PHYSICS
    47. Alzahrani, FM; Chen, T
      On-chip triple-error correction and quadruple-error detection ECC structure for ultra-large, single-chip memories

      COMPUTERS & ELECTRICAL ENGINEERING
    48. Kang, SJ; Chang, DH; Yoon, YS
      Fatigue and dielectric properties of the (Pb, La)TiO3 thin films with various La concentrations

      THIN SOLID FILMS
    49. Berg, J; Bengtsson, S; Lundgren, P
      Can molecular resonant tunneling diodes be used for local refresh of DRAM memory cells?

      SOLID-STATE ELECTRONICS
    50. Takeda, E; Watanabe, T; Kimura, S; Yugami, J; Haraguchi, K; Suzuki, K; Sasaki, K
      Current reliability issues and future technologies for systems on silicon - processes, circuits, chip architecture, and design

      MICROELECTRONICS RELIABILITY
    51. Saha, S; Krupanidhi, SB
      Microstructure related influence on the electrical properties of pulsed laser ablated (Ba, Sr)TiO3 thin films

      JOURNAL OF APPLIED PHYSICS
    52. Chang, CS; Liu, TP; Wu, TB
      Effects of postannealing on the electrical properties of Ta2O5 thin films deposited on TiN/T

      JOURNAL OF APPLIED PHYSICS
    53. Saha, S; Krupanidhi, SB
      Impact of microstructure on the electrical stress induced effects of pulsed laser ablated (Ba, Sr)TiO3 thin films

      JOURNAL OF APPLIED PHYSICS
    54. Gao, Y; Perkins, CL; He, S; Alluri, P; Tran, T; Thevuthasan, S; Henderson, MA
      Mechanistic study of metalorganic chemical vapor deposition of (Ba,Sr)TiO3thin films

      JOURNAL OF APPLIED PHYSICS
    55. Gao, Y; He, S; Alluri, P; Engelhard, M; Lea, AS; Finder, J; Melnick, B; Hance, RL
      Effects of precursors and substrate materials on microstructure, dielectric properties, and step coverage of (Ba, Sr)TiO3 films grown by metalorganicchemical vapor deposition

      JOURNAL OF APPLIED PHYSICS
    56. Wang, CW; Chen, SF; Lin, RD
      Effect of gamma ray irradiation on the conduction mechanisms of radio-frequency-sputtered Ta2O5 films

      IEEE TRANSACTIONS ON NUCLEAR SCIENCE
    57. Ha, D; Shin, D; Koh, GH; Lee, J; Lee, S; Ahn, YS; Jeong, H; Chung, T; Kim, K
      A cost effective embedded DRAM integration for high density memory and high performance logic using 0.15 mu m technology node and beyond

      IEEE TRANSACTIONS ON ELECTRON DEVICES
    58. Yamaguchi, K
      Theoretical study of deep-trap-assisted anomalous currents in worst-bit cells of dynamic random-access memories (DRAM's)

      IEEE TRANSACTIONS ON ELECTRON DEVICES
    59. Yu, YS; Hwang, SW; Song, DH; Lee, KH
      Comments on "A numerical analysis of the storage times of dynamic random-access memory cells incorporating ultrathin dielectrics"

      IEEE TRANSACTIONS ON ELECTRON DEVICES
    60. Banerjee, A; Wise, RL; Plumton, DL; Bevan, M; Pas, MF; Crenshaw, DL; Aoyama, S; Mansoori, MM
      Fabrication and performance of selective HSG storage cells for 256 Mb and 1 Gb DRAM applications

      IEEE TRANSACTIONS ON ELECTRON DEVICES
    61. Koren, I; Koren, Z
      Incorporating yield enhancement into the floorplanning process

      IEEE TRANSACTIONS ON COMPUTERS
    62. Okuda, T; Naritake, I; Sugibayashi, T; Nakajima, Y; Murotani, T
      A 12-ns 8-Mbyte DRAM secondary cache for a 64-bit microprocessor

      IEEE JOURNAL OF SOLID-STATE CIRCUITS
    63. Yamauchi, T; Morisita, F; Maeda, S; Arimoto, K; Fujishima, K; Ozaki, H; Yoshihara, T
      High-performance embedded SOI DRAM architecture for the low-power supply

      IEEE JOURNAL OF SOLID-STATE CIRCUITS
    64. Kono, T; Hamamoto, T; Mitsui, K; Konishi, Y; Yoshihara, T; Ozaki, H
      A precharged-capacitor-assisted sensing (PCAS) scheme with novel level controllers for low-power DRAM's

      IEEE JOURNAL OF SOLID-STATE CIRCUITS
    65. Hoenigschmid, H; Frey, A; DeBrosse, JK; Kirihata, T; Mueller, G; Storaska, DW; Daniel, G; Frankowsky, G; Guay, KP; Hanson, DR; Hsu, LLC; Ji, B; Netis, DG; Panaroni, S; Radens, C; Reith, AM; Terletzki, H; Weinfurtner, O; Alsmeier, J; Weber, W; Wordeman, MR
      A 7F(2) cell and bitline architecture featuring tilted array devices and penalty-free vertical BL twists for 4-Gb DRAM's

      IEEE JOURNAL OF SOLID-STATE CIRCUITS
    66. Weinfurtner, O; Storaska, D; Hsu, L
      Advanced controlling scheme for a DRAM voltage generator system

      IEEE JOURNAL OF SOLID-STATE CIRCUITS
    67. Takai, Y; Fujita, M; Nagata, K; Isa, S; Nakazawa, S; Hirobe, A; Ohkubo, H; Sakao, M; Horiba, S; Fukase, T; Takaishi, Y; Matsuo, M; Komuro, M; Uchida, T; Sakoh, T; Saino, K; Uchiyama, S; Takada, Y; Sekine, J; Nakanishi, N; Oikawa, T; Igeta, M; Tanabe, H; Miyamoto, H; Hashimoto, T; Yamaguchi, H; Koyama, K; Kobayashi, Y; Okuda, T
      A 250-Mb/s/pin, 1-Gb double-data-rate SDRAM with a bidirectional delay andan interbank shared redundancy scheme

      IEEE JOURNAL OF SOLID-STATE CIRCUITS
    68. Agata, Y; Motomochi, K; Fukushima, Y; Shirahama, M; Kurumada, M; Kuroda, N; Sadakata, H; Hayashi, K; Yamada, T; Takahashi, K; Fujita, T
      An 8-ns random cycle embedded RAM macro with dual-port interleaved DRAM architecture (D(2)RAM)

      IEEE JOURNAL OF SOLID-STATE CIRCUITS
    69. Takahashi, O; Dhong, SH; Ohkubo, M; Onishi, S; Dennard, RH; Hannon, R; Crowder, S; Iyer, SS; Wordeman, MR; Davari, B; Weinberger, WB; Aoki, N
      1-GHz fully pipelined 3.7-ns address access time 8 k x 1024 embedded synchronous DRAM macro

      IEEE JOURNAL OF SOLID-STATE CIRCUITS
    70. Kim, JJ; Lee, SB; Jung, TS; Kim, CH; Cho, SI; Kim, B
      A low-jitter mixed-mode DLL for high-speed DRAM applications

      IEEE JOURNAL OF SOLID-STATE CIRCUITS
    71. Sun, WY; Park, JS; Shin, H
      Influence of trench-oxide depth on junction-size dependence of alpha-particle-induced charge collection

      ELECTRONICS LETTERS
    72. Chae, JS; Kim, D; Kim, DM
      Wide range single-way-pumping synchronous mirror delay

      ELECTRONICS LETTERS
    73. Whetten-Goldstein, K; Sloan, FA; Stout, E; Liang, L
      Civil liability, criminal law, and other policies and alcohol-related motor vehicle fatalities in the United States: 1984-1995

      ACCIDENT ANALYSIS AND PREVENTION
    74. Lee, WJ; Hong, J; Rha, SK
      Thermally stable tungsten bit-line process flow for the capacitor over bit-line-type dynamic random-access memory

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
    75. Ueno, S; Inoue, Y; Inuishi, M; Tsubouchi, N
      Leakage mechanism of local junctions forming the main or tail mode of retention characteristics for dynamic random access memories

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
    76. Iizuka, T; Arita, K; Yamamoto, I; Yamamichi, S; Yamaguchi, H; Matsuki, T; Sone, S; Yabuta, H; Miyasaka, Y; Kato, Y
      Low temperature recovery of Ru/(Ba,Sr)TiO3/Ru capacitors degraded by forming gas annealing

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
    77. Wuu, DS; Liao, FC; Kuo, NH; Horng, RH; Lee, MK
      Etching characteristics and mechanism of Ba0.7Sr0.3TiO3 thin films in an inductively coupled plasma

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
    78. Tsuzumitani, A; Okuno, Y; Shibata, J; Shimizu, T; Yamamoto, K; Mori, Y
      Extendibility of Ta2O5 metal-insulator-metal capacitor using Ru electrode

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
    79. Kim, JW; Nam, SD; Lee, SH; Won, SJ; Kim, WD; Yoo, CY; Park, YW; Lee, SI; Lee, MY
      Electrical properties of crystalline Ta2O5 with Ru electrode

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
    80. Yeh, WK; Lin, YC; Chen, TP; Huang, CT; Chang, SJ; Lin, WJ; Jung, LT; Chien, SC; Sun, SW; Liou, FT
      A low thermal budget high performance 0.25-0.18 mu m merged logic device and dynamic random access memory application

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
    81. Jung, JW; Park, SK; Yoon, GH; Kang, DK; Lee, Y
      Study of optimization guidelines on nitrogen concentration in nitrided oxide for logic and dynamic random access memory application

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
    82. Lin, FRL; Lee, ML; Lin, SY; Boe, CH; Yen, CP; Wu, PH; Wang, WS; Ni, J; Hsu, CCH
      A novel high-density and high-speed NAND-type electrical erasable programmable read only memory

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
    83. Momose, S; Nakamura, T; Tachibana, K
      Microdischarge optical emission spectroscopy as a novel diagnostic tool for metalorganic chemical vapor deposition of (Ba,Sr)TiO3 films

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
    84. Tsuboi, S; Watanabe, H; Ezaki, M; Aoyama, H; Kikuchi, Y; Nakayama, Y; Ohki, S; Watanabe, T; Morosawa, T; Saito, K; Oda, M; Matsuda, T
      Precise delineation characteristics of advanced electron beam mask writer EB-X3 for fabricating 1x X-ray masks

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
    85. Chang, CS; Wu, TB; Huang, CK; Shih, WC; Chao, LL
      Thermal stability and oxidation resistance of W, TiW, W(N) and TiW(N) thinfilms deposited on Si

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
    86. Matsui, Y; Hiratani, M; Kimura, S
      Thermal stability of a RuO2 electrode prepared by DC reactive sputtering

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
    87. Dey, SK; Barz, R; Majhi, P; Wang, CG
      Microstructural and dielectric properties of high permittivity (Pb, Ba) ZrO3 thin films by sol-gel processing

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS
    88. Park, SS; Yoon, SG
      Effects of chamber pressure on composition and electrical properties of Zr-modified (Ba1-x,Sr-x)TiO3 thin films grown by sputtering

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS
    89. Kim, JS; Yoon, SG
      The zirconium doped (Ba0.65Sr0.35)(Ti1-xZrx)O-3 thin films for gbit-scale dynamic random access memory device applications

      INTEGRATED FERROELECTRICS
    90. Uemura, T; Mazumder, P
      Design and analysis of resonant-tunneling-diode (RTD) based high performance memory system

      IEICE TRANSACTIONS ON ELECTRONICS
    91. Yamauchi, T; Hammond, L; Olukotun, OA; Arimoto, K
      A single chip multiprocessor integrated with high density DRAM

      IEICE TRANSACTIONS ON ELECTRONICS
    92. Kurachi, I
      Advanced characterization method for sub-micron DRAM cell transistors

      IEICE TRANSACTIONS ON ELECTRONICS
    93. Morishita, F; Yamaguchi, Y; Eimori, T; Oashi, T; Arimoto, K; Inoue, Y; Nishimura, T; Yamada, M
      Analysis and optimization of floating body cell operation for high-speed SOI-DRAM

      IEICE TRANSACTIONS ON ELECTRONICS
    94. Fujieda, S; Nobusawa, H; Hamada, M; Tanigawa, T
      Dependence of SiPN junction perimeter leakage on the channel-stop boron dose and interlayer material

      IEEE ELECTRON DEVICE LETTERS
    95. Redeker, M; Cockburn, BF; Elliott, DG
      Fault models and tests for a 2-bit-per-cell MLDRAM

      IEEE DESIGN & TEST OF COMPUTERS
    96. Kasai, N
      Trend in DRAM structures and processes to giga-bit generations

      NEC RESEARCH & DEVELOPMENT
    97. Drynan, JM; Kishi, S
      Metal capacitor technology for application to merged DRAM logic devices

      NEC RESEARCH & DEVELOPMENT
    98. Matsui, Y; Sakakibara, K; Yamamoto, A; Shimada, K; Shinohara, I; Kinoshita, M
      64Mbit virtual channel synchronous DRAM

      NEC RESEARCH & DEVELOPMENT
    99. Yuan, BJC; Wang, MY
      Analysis on the key factors influencing competitive advantages of DRAM industry in Taiwan

      INTERNATIONAL JOURNAL OF TECHNOLOGY MANAGEMENT
    100. Lacaita, AL; Perron, LM
      Physics and characterization of transient effects in SOI transistors

      MICROELECTRONIC ENGINEERING


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Documento generato il 28/10/20 alle ore 01:53:32