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La ricerca find articoli where soggetti phrase all words 'DISILANE' sort by level,fasc_key/DESCEND, pagina_ini_num/ASCEND ha restituito 303 riferimenti
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    1. Gupper, A; Hassler, K
      Synthesis and properties of 1,2-dichlorodisilane and 1,1,2-trichlorodisilane

      EUROPEAN JOURNAL OF INORGANIC CHEMISTRY
    2. Hofstatter, M; Atakan, B; Kohse-Hoinghaus, K
      CVD growth of silicon films at high rates

      JOURNAL DE PHYSIQUE IV
    3. Mitzel, NW; Losehand, U
      Hexakis(dimethylaminoxy)disiloxane: Insertion of an oxygen atom into the Si-Si bond of a disilane by dimethylaminoxy lithium

      ZEITSCHRIFT FUR NATURFORSCHUNG SECTION B-A JOURNAL OF CHEMICAL SCIENCES
    4. Itoh, M; Iwata, K; Mitsuzuka, M
      Additional reactions of silane with ethylene or acetylene in the gas phaseon metal oxides

      APPLIED CATALYSIS A-GENERAL
    5. Jarek, RL; Thornberg, SM
      Hazards of dichlorosilane exhaust deposits from the high-temperature oxideprocess as determined by FT-ICR mass spectrometry

      IEEE TRANSACTIONS ON SEMICONDUCTOR MANUFACTURING
    6. Bouyer, E; Schiller, G; Muller, M; Henne, RH
      Characterization of SiC and Si3N4 coatings synthesized by means of inductive thermal plasma from disilane precursors

      APPLIED ORGANOMETALLIC CHEMISTRY
    7. Lerner, HW; Scholz, S; Bolte, M
      The sodium silanide tBu(2)PhSiNa: Synthesis, properties, structure analysis - a synthetic pathway to introduce the tBu(2)PhSi-ligand

      ZEITSCHRIFT FUR ANORGANISCHE UND ALLGEMEINE CHEMIE
    8. Cakmak, M; Srivastava, GP
      Adsorption of GeH2 on the Si(001) surface

      SURFACE SCIENCE
    9. Pophristic, V; Goodman, L
      Exchange repulsion increases internal rotation floppiness

      JOURNAL OF CHEMICAL PHYSICS
    10. Yasuda, T; Nishizawa, M; Yamasaki, S
      Chemical vapor deposition of Si on chlorosilane-treated SiO2 surfaces. I. Suppression and enhancement of Si nucleation

      JOURNAL OF APPLIED PHYSICS
    11. Danesh, P; Pantchev, B; Grambole, D; Schmidt, B
      Depth distributions of hydrogen and intrinsic stress in a-Si : H films prepared from hydrogen-diluted silane

      JOURNAL OF APPLIED PHYSICS
    12. Akazawa, H
      Contribution of dangling-bond regeneration channels in the synchrotron-radiation-excited epitaxy of Si from SiH2Cl2

      JOURNAL OF APPLIED PHYSICS
    13. Barathieu, P; Caussat, B; Scheid, E; Jaume, D; Couderc, JP
      Low-pressure chemical vapor deposition of semi-insulating polycrystalline silicon thin films I. Experimental study and proposal of new kinetic laws

      JOURNAL OF THE ELECTROCHEMICAL SOCIETY
    14. Chambreau, SD; Zhang, JS
      VUV photoionization time-of-flight mass spectrometry of flash pyrolysis ofsilane and disilane

      CHEMICAL PHYSICS LETTERS
    15. Murata, T; Nakazawa, H; Tsukidate, Y; Suemitsu, M
      Role of adsorption kinetics in the low-temperature Si growth by gas-sourcemolecular beam epitaxy: In situ observations and detailed modeling of the growth

      APPLIED PHYSICS LETTERS
    16. Tsukidate, Y; Suemitsu, M
      Infrared study of SiH4-Adsorbed Si(100) surfaces: Observation and mode assignment of new peaks

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
    17. Saranin, AA; Zotov, AV; Kotlyar, VG; Lifshits, VG; Kubo, O; Harada, T; Kobayashi, T; Yamaoka, N; Katayama, M; Oura, K
      Scanning tunneling microscopy study of the c(4 x 4) structure formation inthe sub-monolayer Sb/Si(100) system

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
    18. Cakmak, M; Srivastava, GP
      Dissociative adsorption of Si2H6 on the Si(001) surface

      PHYSICAL REVIEW B
    19. Rodriguez, A; Olivares, J; Gonzalez, C; Sangrador, J; Rodriguez, T; Ballesteros, C; Gwilliam, RM
      Grain size, grain uniformity, and (111) texture enhancement by solid-phasecrystallization of F- and C-implanted SiGe films

      JOURNAL OF MATERIALS RESEARCH
    20. Banerji, N; Serra, J; Chiussi, S; Leon, B; Perez-Amor, M
      Photo-induced deposition and characterization of variable bandgap a-SiN : H alloy films

      APPLIED SURFACE SCIENCE
    21. Niwano, M; Shinohara, M; Neo, Y; Yokoo, K
      Si2H6 adsorption and hydrogen desorption on Si(100) investigated by infrared spectroscopy

      APPLIED SURFACE SCIENCE
    22. Ateca, S; Bater, C; Sanders, M; Craig, JH
      Adsorption studies of digermane and disilane on Ge(100)

      SURFACE AND INTERFACE ANALYSIS
    23. Wee, H; Lee, C; Shin, SC
      Growth mechanisms of crystallites in the mixed-phase silicon films deposited by low-pressure chemical vapor deposition

      THIN SOLID FILMS
    24. Shinohara, M; Niwano, M; Neo, Y; Yokoo, K
      Infrared study of adsorption and thermal decomposition of Si2H6 on Si(100)

      THIN SOLID FILMS
    25. Omote, M; Tokita, T; Shimizu, Y; Imae, I; Shirakawa, E; Kawakami, Y
      Stereospecific formation of optically active trialkylsilyllithiums and their configurational stability

      JOURNAL OF ORGANOMETALLIC CHEMISTRY
    26. Komoriya, H; Kako, M; Nakadaira, Y; Mochida, K
      A 3,4-benzo-1,2-germacyclobut-3-ene and related compounds. Palladium-catalyzed sigma-metathesis, dehydrogenative coupling and hydrogermylation of theGe-Ge sigma-bond

      JOURNAL OF ORGANOMETALLIC CHEMISTRY
    27. Ogawa, A
      Activation and reactivity of Group 16 inter-element linkage - transition-metal-catalyzed reactions of thiols and selenols

      JOURNAL OF ORGANOMETALLIC CHEMISTRY
    28. Hanna, J; Shimizu, K
      Low-temperature growth of polycrystalline Si and Ge films by redox reactions of Si2H6 and GeF4

      JOURNAL OF ORGANOMETALLIC CHEMISTRY
    29. Gao, F; Huang, DD; Li, JP; Lin, YX; Kong, MY; Sun, DZ; Li, JM; Lin, LY
      Influence of phosphine flow rate on Si growth rate in gas source molecularbeam epitaxy

      JOURNAL OF CRYSTAL GROWTH
    30. Price, RW; Tok, ES; Zhang, J
      Probing the silane, disilane and germane adsorption kinetics on the silicon (001) surface

      JOURNAL OF CRYSTAL GROWTH
    31. Yan, M; Bogaerts, A; Gijbels, R; Goedheer, WJ
      Spatial behavior of energy relaxation of electrons in capacitively coupleddischarges: Comparison between Ar and SiH4

      JOURNAL OF APPLIED PHYSICS
    32. Onischuk, AA; Levykin, AI; Strunin, VP; Sabelfeld, KK; Panfilov, VN
      Aggregate formation under homogeneous silane thermal decomposition

      JOURNAL OF AEROSOL SCIENCE
    33. Girshick, SL; Swihart, MT; Suh, SM; Mahajan, MR; Nijhawan, S
      Numerical modeling of gas-phase nucleation and particle growth during chemical vapor deposition of silicon

      JOURNAL OF THE ELECTROCHEMICAL SOCIETY
    34. Sakata, K; Tachibana, A
      Quantum-chemical study on the reaction between GeF4 and Si2H6

      CHEMICAL PHYSICS LETTERS
    35. Tonokura, K; Murasaki, T; Koshi, M
      Diagnostics of the gas-phase thermal decomposition of Si2H6 using vacuum ultraviolet photoionization

      CHEMICAL PHYSICS LETTERS
    36. Vergnes, H; Duverneuil, P; Couderc, JP
      new equipment technology for chemical vapor deposition - .2. Modelling of pure silicon desposition from silane and insitu phosphorus doped silicon

      CANADIAN JOURNAL OF CHEMICAL ENGINEERING
    37. Taylor, N; Kim, H; Desjardins, P; Foo, YL; Greene, JE
      Si(011)16x2 gas-source molecular beam epitaxy: Growth kinetics

      APPLIED PHYSICS LETTERS
    38. Yamanaka, M; Sakata, I; Sekigawa, T
      Effects of film quality of hydrogenated amorphous silicon grown by thermalchemical-vapor-depositon on subsequent in-situ hydrogenation processes

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
    39. Wang, GT; Mui, C; Musgrave, CB; Bent, SF
      Cycloaddition of cyclopentadiene and dicyclopentadiene on Si(100)-2x1: Comparison of monomer and dimer adsorption

      JOURNAL OF PHYSICAL CHEMISTRY B
    40. Swihart, MT; Girshick, SL
      Thermochemistry and kinetics of silicon hydride cluster formation during thermal decomposition of silane

      JOURNAL OF PHYSICAL CHEMISTRY B
    41. Becerra, R; Walsh, R
      A gas-phase kinetic study of the reaction of germylene with trimethylsilane: absolute rate constants, temperature dependence and mechanism

      PCCP PHYSICAL CHEMISTRY CHEMICAL PHYSICS
    42. Impens, NREN; van der Voort, P; Vansant, EF
      Silylation of micro-, meso- and non-porous oxides: a review

      MICROPOROUS AND MESOPOROUS MATERIALS
    43. Temple-Boyer, P; de Mauduit, B; Caussat, B; Couderc, JP
      Correlations between stress and microstructure into LPCVD silicon films

      JOURNAL DE PHYSIQUE IV
    44. Uzuafa, F; Lin, SC; Gabitto, J; Shukla, K
      Modeling and simulation of photo-CVD reactors

      INDUSTRIAL & ENGINEERING CHEMISTRY RESEARCH
    45. Becerra, R; Walsh, R
      The insertion of silylene in C-H bonds; rate constant limits and the energy barrier

      INTERNATIONAL JOURNAL OF CHEMICAL KINETICS
    46. Banerji, N; Serra, J; Chiussi, S; Lusquinos, F; Leon, B; Perez-Amor, M
      Characterization of Si-rich a-Si1-xNx : H alloys deposited by laser-CVD

      APPLIED SURFACE SCIENCE
    47. O'Neil, PA; Ozturk, MC; Batchelor, AD; Maher, DM
      Effects of oxygen on selective silicon deposition using disilane

      MATERIALS LETTERS
    48. Chtchekine, DG; Feng, ZC; Gilliland, GD; Chua, SJ; Wolford, D
      Donor-hydrogen bound exciton in epitaxial GaN

      PHYSICAL REVIEW B-CONDENSED MATTER
    49. Jeong, S; Oshiyama, A
      Chemical differences in surface diffusion: Si and Ge adatoms at the D-B step on the hydrogenated Si(100) surface

      PHYSICAL REVIEW B-CONDENSED MATTER
    50. Que, JZ; Radny, MW; Smith, PV
      Empirical-potential study of the dissociative chemisorption of Si2H6 on the Si(001)2x1 surface

      PHYSICAL REVIEW B-CONDENSED MATTER
    51. Kahng, SJ; Park, JY; Kuk, Y
      Surface reconstructions of the Si(100)-Ge system

      SURFACE SCIENCE
    52. Gallas, B; Hartmann, JM; Breton, G; Harris, JJ; Zhang, J; Joyce, BA
      Influence of doping on facet formation at the SiO2/Si interface

      SURFACE SCIENCE
    53. Ferguson, BA; Reeves, CT; Mullins, CB
      Trapping dynamics of disilane on bare and monohydride-terminated Si(100)-2x 1

      SURFACE SCIENCE
    54. Lin, DS; Ku, TS; Sheu, TJ
      Thermal reactions of phosphine with Si(100): a combined photoemission and scanning-tunneling-microscopy study

      SURFACE SCIENCE
    55. Caussat, B; Hemati, M; Couderc, JP
      Local modeling of mass transfer with chemical reactions in a gas-solid fluidized bed. Application to the chemical vapor deposition of silicon from silanes

      POWDER TECHNOLOGY
    56. Huber, G; Schmidbaur, H
      Hexa(amino)disilanes with saturated cyclic amino ligands

      MONATSHEFTE FUR CHEMIE
    57. Tamao, K; Asahara, M; Sun, GR; Kawachi, A
      Synthesis, structure, and reactivity of 1,omega-bis(pseudo-pentacoordinated) 1,omega-difluoro-oligosilanes bearing 8-(dimethylamino)-1-naphthyl groups

      JOURNAL OF ORGANOMETALLIC CHEMISTRY
    58. KANG KK; SHIONO T; JEONG YT; LEE DH
      POLYMERIZATION OF PROPYLENE BY USING MG(OET)(2)-DNBP-TICL4 CATALYST WITH ALKOXY DISILANES AS EXTERNAL DONOR

      Journal of applied polymer science
    59. Mota, FD; Justo, JF; Fazzio, A
      Hydrogen role on the properties of amorphous silicon nitride

      JOURNAL OF APPLIED PHYSICS
    60. Ban, I; Ozturk, MC; Misra, V; Wortman, JJ; Venables, D; Maher, DM
      A low-thermal-budget in situ doped multilayer silicon epitaxy process for MOSFET channel engineering

      JOURNAL OF THE ELECTROCHEMICAL SOCIETY
    61. Korkin, AA; Cole, JV; Sengupta, D; Adams, JB
      On the mechanism of silicon nitride chemical vapor deposition from dichlorosilane and ammonia

      JOURNAL OF THE ELECTROCHEMICAL SOCIETY
    62. Ruvalcaba, JRR; Caussat, B; Hemati, M; Couderc, JP
      Hydrodynamic study of vacuum fluidized beds at high temperature

      CANADIAN JOURNAL OF CHEMICAL ENGINEERING
    63. Roadman, SE; Levine, SW; Zheng, YJ; Clancy, P; Engstrom, JR
      Pattern formation and shadow instability in collimated energetic molecularbeam growth of silicon

      APPLIED PHYSICS LETTERS
    64. Kono, A; Hirose, S; Goto, T
      CW laser-induced fluorescence study of SiH2+SiH4 reaction: Dominance of two-body reaction channel in low-pressure silane plasma

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
    65. Futako, W; Takagi, T; Nishimoto, T; Kondo, M; Shimizu, I; Matsuda, A
      Gas phase diagnosis of disilane/hydrogen RF glow discharge plasma and its application to high rate growth of high quality amorphous silicon

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
    66. Beji, L; Rebey, A; El Jani, B
      Incorporation modes of silicon in GaAs: Si grown by metalorganic vapor phase epitaxy

      EUROPEAN PHYSICAL JOURNAL-APPLIED PHYSICS
    67. Li, VZQ; Mirabedini, MR; Vogel, E; Henson, K; Batchelor, D; Wortman, JJ; Kuehn, RT
      Effects of Si source gases (SiH4 and Si2H6) on polycrystalline-Si1-xGex deposited on oxide by RTCVD

      ELECTROCHEMICAL AND SOLID STATE LETTERS
    68. ONEAL HE; RING MA; MARTIN JG; NAVIO MT
      KINETICS OF SILYLENE INSERTION INTO N-H BONDS AND THE MECHANISM AND KINETICS OF THE PYROLYSIS OF DIMETHYLSILYLAMINE

      The journal of physical chemistry. A, Molecules, spectroscopy, kinetics, environment, & general theory
    69. ROADMAN SE; MAITY N; CARTER JN; ENGSTROM JR
      STUDY OF THIN-FILM DEPOSITION PROCESSES EMPLOYING VARIABLE KINETIC-ENERGY, HIGHLY COLLIMATED NEUTRAL MOLECULAR-BEAMS

      Journal of vacuum science & technology. A. Vacuum, surfaces, and films
    70. ONISCHUK AA; STRUNIN VP; USHAKOVA MA; PANFILOV VN
      STUDYING OF SILANE THERMAL-DECOMPOSITION MECHANISM

      International journal of chemical kinetics
    71. Hsu, CC; Lee, LL; Tsai, DS
      Direct simulation Monte Carlo of monosilane low pressure chemical vapor deposition

      JOURNAL OF THE CHINESE INSTITUTE OF CHEMICAL ENGINEERS
    72. SUGINOME M; KATO Y; TAKEDA N; OIKE H; ITO Y
      REACTIONS OF A SPIRO TRISILANE WITH PALLADIUM COMPLEXES - SYNTHESIS AND STRUCTURE OF TRIS(ORGANOSILYL)CPPDIV AND BIS(ORGANOSILYL)(MU-ORGANOSILYLENE)PD-2(II) COMPLEXES

      Organometallics
    73. YOSHIGOE A; HIRANO S; URISU T
      SURFACE HYDROGEN AND GROWTH MECHANISMS OF SYNCHROTRON RADIATION-ASSISTED SILICON GAS-SOURCE MOLECULAR-BEAM EPITAXY USING DISILANE

      Applied organometallic chemistry
    74. ICHIKAWA M; FUJITA K; KUSUMI Y
      FORMATION AND CHEMICAL SELECTIVITY OF PARTIALLY GA-TERMINATED SI(111)SURFACES

      Surface review and letters
    75. GUPTE GR; PRASAD R
      GROUND-STATE GEOMETRIES AND VIBRATIONAL-SPECTRA OF SMALL HYDROGENATEDSILICON CLUSTERS USING NONORTHOGONAL TIGHT-BINDING MOLECULAR-DYNAMICS

      International journal of modern physics b
    76. OKUMURA H; ISHIKAWA T; AKANE T; SANO M; MATSUMOTO S
      LOW-TEMPERATURE GROWTH OF SI ON SI(111) BY GAS-SOURCE MBE WITH RAPID THERMAL ANNEALING - AFM STUDY ON SURFACE-MORPHOLOGY

      Applied surface science
    77. SHIMOSHIKIRYO F; TAKAKUWA Y; MIYAMOTO N
      OBSERVATION OF DIMER DANGLING BONDS ON A SI(001)2X1 SURFACE BY GRAZING-INCIDENCE REFLECTION HIGH-ENERGY ELECTRON-DIFFRACTION AND AUGER-ELECTRON SPECTROSCOPY

      Applied surface science
    78. TSUKIDATE Y; SUEMITSU M
      ADSORPTION OF SIH4 OR SI2H6 ON P SI(100) AT ROOM TEMPERATURES/

      Applied surface science
    79. NAKAZAWA H; SUEMITSU M
      HIGHER-ORDER DESORPTION-KINETICS OF HYDROGEN FROM SILANE , DISILANE/,AND D/SI(100)/

      Applied surface science
    80. CALLEJA E; SANCHEZGARCIA MA; BASAK D; SANCHEZ FJ; CALLE F; YOUINOU P; MUNOZ E; SERRANO JJ; BLANCO JM; VILLAR C; LAINE T; OILA J; SAARINEN K; HAUTOJARVI P; MOLLOY CH; SOMERFORD DJ; HARRISON I
      EFFECT OF GA SI INTERDIFFUSION ON OPTICAL AND TRANSPORT-PROPERTIES OFGAN LAYERS GROWN ON SI(111) BY MOLECULAR-BEAM EPITAXY/

      Physical review. B, Condensed matter
    81. WU PH; LIN DS
      GROWTH MODE IN SI(100)-(2X1) EPITAXY BY LOW-TEMPERATURE CHEMICAL-VAPOR-DEPOSITION

      Physical review. B, Condensed matter
    82. Hong, S; Chou, MY
      Role of hydrogen in SiH2 adsorption on Si(100)

      PHYSICAL REVIEW B-CONDENSED MATTER
    83. CAMPO JMD; LENSKI M; COMES FJ
      INFLUENCE OF GAS-PHASE CHEMISTRY ON THE PROPERTIES OF HYDROGENATED AMORPHOUS-SILICON AND SILICON-CARBON ALLOYS GROWN BY HACVD

      Thin solid films
    84. AKAZAWA H
      REAL-TIME MONITORING OF SYNCHROTRON-RADIATION-EXCITED SI HOMOEPITAXY ON SI(100) BY SPECTROSCOPIC ELLIPSOMETRY

      Thin solid films
    85. Ishikawa, T; Okumura, H; Akane, T; Sano, M; Giraud, S; Nakabayashi, Y; Matsumoto, S
      Low temperature epitaxial growth of Si on Si(111) by gas-source MBE with heat-pulse annealing

      THIN SOLID FILMS
    86. BRAUN J; RAUSCHER H; BEHM RJ
      ADSORPTION OF DISILANE ON SI(111)-(7X7) AND INITIAL-STAGES OF CVD GROWTH

      Surface science
    87. BRAUN J; RAUSCHER H; BEHM RJ
      COMMENT ON STM STUDY OF LOW-PRESSURE ADSORPTION OF SILANE ON SI (111)-(7 X 7)

      Surface science
    88. GRUBE H; BOLAND JJ
      ORIGIN OF HOMOEPITAXIAL FAULTED ISLAND GROWTH ON THE SI(111) SURFACE

      Surface science
    89. ANGOT T; CHELLY R
      STABLE GE-H PHASE AT 620K ON SI1-XGEX SI(001) SURFACE - A HIGH-RESOLUTION ELECTRON-ENERGY-LOSS SPECTROSCOPY STUDY/

      Surface science
    90. LIN DS
      SCANNING-TUNNELING-MICROSCOPY OBSERVATION OF SURFACE RECONSTRUCTION OF SI(100) DURING CHEMICAL-VAPOR-DEPOSITION FROM SI2H6

      Surface science
    91. AKAZAWA H; TAKAHASHI J
      HIGH-PERFORMANCE BEAMLINE FOR VACUUM-ULTRAVIOLET-EXCITED MATERIAL PROCESSING

      Review of scientific instruments
    92. Jeong, S; Oshiyama, A
      Structural stability and adatom diffusion at steps on hydrogenated Si(100)surfaces

      PHYSICAL REVIEW LETTERS
    93. BETI L; CHINE Z; ELJANI B; OUESLATI M
      VERY HIGH-SILICON CONCENTRATION BY MOVPE IN GAAS

      Physica status solidi. a, Applied research
    94. CAMPARGUE A; ROMANINI D; SADEGHI N
      MEASUREMENT OF SIH2 DENSITY IN A DISCHARGE BY INTRACAVITY LASER-ABSORPTION SPECTROSCOPY AND CW CAVITY RING-DOWN SPECTROSCOPY

      Journal of physics. D, Applied physics
    95. HOLLENSTEIN C; HOWLING AA; COURTEILLE C; MAGNI D; SCHOLZ SM; KROESEN GMW; SIMONS N; DEZEEUW W; SCHWARZENBACH W
      SILICON-OXIDE PARTICLE FORMATION IN RF PLASMAS INVESTIGATED BY INFRARED-ABSORPTION SPECTROSCOPY AND MASS-SPECTROMETRY

      Journal of physics. D, Applied physics
    96. OGAWA A; KUNIYASU H; TAKEBA M; IKEDA T; SONODA N; HIRAO T
      PALLADIUM(0)-CATALYZED REGIOSELECTIVE AND STEREOSELECTIVE ADDITION OFHETEROATOM COMPOUNDS BEARING SI-SE, GE-SE, AND SI-GE BONDS TO PHENYLACETYLENE

      Journal of organometallic chemistry
    97. KUSUKAWA T; ANDO W
      PHOTOCHEMICAL FUNCTIONALIZATIONS OF C-60 WITH PHENYLPOLYSILANES

      Journal of organometallic chemistry
    98. CUI J; OZEKI M; OHASHI M
      DYNAMICAL-APPROACH TO THE SURFACE-REACTION OF TRIISOBUTYLGALLIUM (TIBGA) ON GAAS(001) BY USING MOLECULAR-BEAM SCATTERING

      Journal of crystal growth
    99. Ochimizu, H; Tanaka, H
      Si-doping into GaAs grown by metalorganic vapor phase epitaxy using bisdiisopropylaminosilane

      JOURNAL OF CRYSTAL GROWTH
    100. Liu, JP; Kong, MY; Huang, DD; Li, JP; Sun, DZ
      Structural characterization of SiGe/Si single wells grown by disilane and solid-Ge molecular beam epitaxy with varied disilane cracking temperature

      JOURNAL OF CRYSTAL GROWTH


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Documento generato il 26/01/21 alle ore 14:29:22