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La ricerca find articoli where soggetti phrase all words 'DIFFUSION BARRIER' sort by level,fasc_key/DESCEND, pagina_ini_num/ASCEND ha restituito 328 riferimenti
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    1. Crane, EL; Chiu, HT; Nuzzo, RG
      Kinetic and mechanistic studies of the chemical vapor deposition of tungsten nitride from bis(tertbutylimido)bis(tertbutylamido)tungsten

      JOURNAL OF PHYSICAL CHEMISTRY B
    2. Angelkort, C; Lewalter, H; Warbichler, P; Hofer, F; Bock, W; Kolbesen, BO
      Formation of niobium nitride by rapid thermal processing

      SPECTROCHIMICA ACTA PART A-MOLECULAR AND BIOMOLECULAR SPECTROSCOPY
    3. Bogacz, J; Mazur, J; Swakon, J; Janik, M
      The calibration of activated charcoal detectors in a small Rn-222 exposurechamber

      RADIATION MEASUREMENTS
    4. Hara, T; Kurosu, T; Doy, T
      Chemical mechanical planarization of copper and barrier layers by manganese(IV) oxide slurry

      ELECTROCHEMICAL AND SOLID STATE LETTERS
    5. Yoon, DS; Hong, K; Yu, YS; Roh, JS
      Suppression of abnormal grain growth in Ru film by N2O plasma treatment for (Ba, Sr) TiO3 dielectric film

      ELECTROCHEMICAL AND SOLID STATE LETTERS
    6. Hirata, A; Maeda, T; Machida, K; Maeda, M; Yasui, K; Kyuragi, H
      Effect of thinning a WSiN/WSIx barrier layer on its barrier capability

      JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B
    7. Bain, MF; Armstrong, BM; Gamble, HS
      Characterization of CVD tungsten deposited by silane reduction

      JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS
    8. Juppo, M; Alen, P; Ritala, M; Leskela, M
      Trimethylaluminum as a reducing agent in the atomic layer deposition of Ti(Al)N thin films

      CHEMICAL VAPOR DEPOSITION
    9. Nie, HB; Xu, SY; Wang, SJ; You, LP; Yang, Z; Ong, CK; Li, J; Liew, TYF
      Structural and electrical properties of tantalum nitride thin films fabricated by using reactive radio-frequency magnetron sputtering

      APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING
    10. Liu, L; Gong, H; Wang, Y; Wang, JP; Wee, ATS; Liu, R
      Annealing effects of tantalum thin films sputtered on [001] silicon substrate

      MATERIALS SCIENCE & ENGINEERING C-BIOMIMETIC AND SUPRAMOLECULAR SYSTEMS
    11. Tang, W; Wang, Q; Wang, S; Lu, F
      Adherent diamond coatings on cemented carbide substrates with different cobalt contents

      DIAMOND AND RELATED MATERIALS
    12. Latt, KM; Lee, YK; Li, S; Osipowicz, T; Seng, HL
      The impact of layer thickness of IMP-deposited tantalum nitride films on integrity of Cu/TaN/SiO2/Si multilayer structure

      MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY
    13. Latt, KM; Lee, K; Osipowicz, T; Lee, YK
      Properties of electroplated copper thin film and its interfacial reactionsin the EPCu/IMPCu/IMPTaN/SiO2/Si multilayer structure

      MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY
    14. Vargheese, KD; Rao, GM; Balasubramanian, TV; Kumar, S
      Preparation and characterization of TiN films by electron cyclotron resonance (ECR) sputtering for diffusion barrier applications

      MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY
    15. Kohn, A; Eizenberg, M; Shacham-Diamand, Y; Sverdlov, Y
      Characterization of electroless deposited Co(W,P) thin films for encapsulation of copper metallization

      MATERIALS SCIENCE AND ENGINEERING A-STRUCTURAL MATERIALS PROPERTIES MICROSTRUCTURE AND PROCESSING
    16. Hu, YF; Sham, TK; Zou, Z; Xu, GQ; Chan, L; Yates, BW; Bancroft, GM
      A study of titanium nitride diffusion barriers between aluminium and silicon by X-ray absorption spectroscopy: the Si, Ti and N results

      JOURNAL OF SYNCHROTRON RADIATION
    17. Pedraza, L; Huang, JK; Colman, DR
      Organizing principles of the axoglial apparatus

      NEURON
    18. Laurila, T; Zeng, KJ; Kivilahti, JK; Molarius, J; Suni, I
      Effect of oxygen on the reactions in the Si/Ta/Cu metallization system

      JOURNAL OF MATERIALS RESEARCH
    19. Smith, CE; Atchabahian, A; Mackinnon, SE; Hunter, DA
      Development of the blood-nerve barrier in neonatal rats

      MICROSURGERY
    20. Chun, JS; Carlsson, JRA; Desjardins, P; Bergstrom, DB; Petrov, I; Greene, JE; Lavoie, C; Cabral, C; Hultman, L
      Synchrotron x-ray diffraction and transmission electron microscopy studiesof interfacial reaction paths and kinetics during annealing of fully-002-textured Al/TiN bilayers

      JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS
    21. Nam, SE; Lee, KH
      Hydrogen separation by Pd alloy composite membranes: introduction of diffusion barrier

      JOURNAL OF MEMBRANE SCIENCE
    22. Lin, KL; Hsu, HM
      Sn-Zn-AlPb-free solder - An inherent barrier solder for Cu contact

      JOURNAL OF ELECTRONIC MATERIALS
    23. Wang, SJ; Tsai, HY; Sun, SC; Shiao, MH
      Characterization of sputtered Ta-C-N film in the Cu/barrier/Si contact system

      JOURNAL OF ELECTRONIC MATERIALS
    24. Yoon, DS; Baik, HK; Lee, SM; Roh, JS
      Amorphous Ta-nanocrystalline RuOx diffusion barrier for lower electrode ofhigh density memory devices

      JOURNAL OF ELECTRONIC MATERIALS
    25. Kizil, H; Kim, G; Steinbruchel, C; Zhao, B
      TiN and TaN diffusion barriers in copper interconnect technology: Towards a consistent testing methodology

      JOURNAL OF ELECTRONIC MATERIALS
    26. Inberg, A; Shacham-Diamand, Y; Rabinovich, E; Golan, G; Croitoru, N
      Material and electrical properties of electroless Ag-W thin film

      JOURNAL OF ELECTRONIC MATERIALS
    27. Lee, WH; Park, SK; Kang, BJ; Reucroft, PJ; Lee, JG
      Deposition characteristics of Ti-Si-N films reactively sputtered from various targets in a N-2/Ar gas mixture

      JOURNAL OF ELECTRONIC MATERIALS
    28. Shi, JR; Lau, SP; Sun, Z; Shi, X; Tay, BK; Tan, HS
      Structural and electrical properties of copper thin films prepared by filtered cathodic vacuum arc technique

      SURFACE & COATINGS TECHNOLOGY
    29. Yin, KM; Chang, L; Chen, FR; Kai, JJ
      The effect of oxygen on the interfacial reactions of Cu/TaNx/Si multilayers

      MATERIALS CHEMISTRY AND PHYSICS
    30. Lee, WH; Lin, JC; Lee, CP
      Characterization of tantalum nitride films deposited by reactive sputtering of Ta in N-2/Ar gas mixtures

      MATERIALS CHEMISTRY AND PHYSICS
    31. Ekstrom, BM; Lee, S; Magtoto, N; Kelber, JA
      Cu wetting and interfacial stability on clean and nitrided tungsten surfaces

      APPLIED SURFACE SCIENCE
    32. Migita, T; Kamei, R; Tanaka, T; Kawabata, K
      Effect of dc bias on the compositional ratio of WNX thin films prepared byrf-dc coupled magnetron sputtering

      APPLIED SURFACE SCIENCE
    33. Paul, A; Elmrabet, S; Alves, LC; da Silva, MF; Soares, JC; Odriozola, JA
      Ion microprobe study of the scale formed during high temperature oxidationof high silicon EN-1.4301 stainless steel

      NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS
    34. Bystrova, S; Holleman, J; Woerlee, PH
      Growth and properties of LPCVD W-Si-N barrier layers

      MICROELECTRONIC ENGINEERING
    35. Riedel, S; Schulz, SE; Baumann, J; Rennau, M; Gessner, T
      Influence of different treatment techniques on the barrier properties of MOCVD TiN against copper diffusion

      MICROELECTRONIC ENGINEERING
    36. Motte, P; Swaanen, M; Torres, J; Gilet, JM; Wyborn, G
      Damascene test structures for the evaluation of barrier layer performance against copper diffusion

      MICROELECTRONIC ENGINEERING
    37. Kohn, A; Eizenberg, M; Shacham-Diamand, Y; Israel, B; Sverdlov, Y
      Evaluation of electroless deposited Co(W,P) thin films as diffusion barriers for copper metallization

      MICROELECTRONIC ENGINEERING
    38. Chen, JS; Lu, KY
      Thermal stability of Cu/TiN and Cu/Ti/TiN metallizations on silicon

      THIN SOLID FILMS
    39. Inberg, A; Shacham-Diamand, Y; Rabinovich, E; Golan, G; Croitoru, N
      Electroless-deposited Ag-W films for microelectronics applications

      THIN SOLID FILMS
    40. Yin, KM; Chang, L; Chen, FR; Kai, JJ; Chiang, CC; Ding, PJ; Chin, B; Zhang, H; Chen, FS
      The effect of oxygen in the annealing ambient on interfacial reactions of Cu/Ta/Si multilayers

      THIN SOLID FILMS
    41. Yin, KM; Chang, L; Chen, FR; Kai, JJ; Chiang, CC; Chuang, G; Ding, PJ; Chin, B; Zhang, H; Chen, FS
      Oxidation of Ta diffusion barrier layer for Cu metallization in thermal annealing

      THIN SOLID FILMS
    42. Perkins, CL; Singh, R; Trenary, M; Tanaka, T; Paderno, Y
      Surface properties of Hafnium diboride(0001) as determined by X-ray photoelectron spectroscopy and scanning tunneling microscopy

      SURFACE SCIENCE
    43. Zhang, WR; Li, ZG; Mu, FC; Sun, YH; Cheng, YH; Chen, JX; Shen, GD
      Rapid evaluation degradation activation energy of n-GaAs ohmic contacts with and without TiN diffusion barrier layers

      SOLID-STATE ELECTRONICS
    44. Yang, WL; Wu, WF; Liu, DG; Wu, CC; Ou, KL
      Barrier capability of TaNx films deposited by different nitrogen flow rateagainst Cu diffusion in Cu/TaNx/n(+)-p junction diodes

      SOLID-STATE ELECTRONICS
    45. Jung, HG; Wee, DM; Oh, MH; Kim, KY
      An Al plus Y coating process for improvement of the high-temperature oxidation resistance of a TiAl alloy

      OXIDATION OF METALS
    46. Moshfegh, AZ; Akhavan, O
      Retardation of Ta silicidation by bias sputtering in Cu/Ta/Si(111) thin films

      JOURNAL OF PHYSICS D-APPLIED PHYSICS
    47. Pappenheimer, JR
      Role of pre-epithelial "unstirred" layers in absorption of nutrients from the human jejunum

      JOURNAL OF MEMBRANE BIOLOGY
    48. Latt, KM; Sher-Yi, C; Osipowicz, T; Lee, K; Lee, YK
      Comparative study of copper films prepared by ionized metal plasma sputtering and chemical vapor deposition in the Cu/TaN/SiO2/Si multilayer structure

      JOURNAL OF MATERIALS SCIENCE
    49. Schiraldi, DA; Gould, SAC; Occelli, ML
      Surface of poly(ethylene terephthalate/isophthalate) copolyesters studied by atomic force microscopy

      JOURNAL OF APPLIED POLYMER SCIENCE
    50. Pinnow, CU; Bicker, M; Geyer, U; Schneider, S; Goerigk, G
      Decomposition and nanocrystallization in reactively sputtered amorphous Ta-Si-N thin films

      JOURNAL OF APPLIED PHYSICS
    51. Liu, L; Wang, Y; Gong, H
      Annealing effects of tantalum films on Si and SiO2/Si substrates in various vacuums

      JOURNAL OF APPLIED PHYSICS
    52. Havemann, RH; Hutchby, JA
      High-performance interconnects: An integration overview

      PROCEEDINGS OF THE IEEE
    53. Yoon, DS; Hong, K; Roh, JS
      Effect of post-treatment temperature on TiN barrier properties during a two-step annealing for (Ba, Sr)TiO3 dielectric film

      JOURNAL OF THE ELECTROCHEMICAL SOCIETY
    54. Shacham-Diamand, Y; Sverdlov, Y; Petrov, N
      Electroless deposition of thin-film cobalt-tungsten-phosphorus layers using tungsten phosphoric acid (H-3[P(W3O10)(4)]) for ULSI and MEMS applications

      JOURNAL OF THE ELECTROCHEMICAL SOCIETY
    55. Alen, P; Juppo, M; Ritala, M; Sajavaara, T; Keinonen, J; Leskela, M
      Atomic layer deposition of Ta(Al)N(C) thin films using trimethylaluminum as a reducing agent

      JOURNAL OF THE ELECTROCHEMICAL SOCIETY
    56. Hsu, HH; Lin, KH; Lin, SJ; Yeh, JW
      Electroless copper deposition for ultralarge-scale integration

      JOURNAL OF THE ELECTROCHEMICAL SOCIETY
    57. Cho, IH; Park, JS; Sohn, DK; Ha, JH
      Increased thermal stability of W/Ta2O5 gate structure using effective diffusion barrier of denuded tungsten nitride

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
    58. Uhm, J; Jeon, H
      TiN diffusion barrier grown by atomic layer deposition method for Cu metallization

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
    59. Sasaki, K; Miyake, H; Shinkai, S; Abe, Y; Yanagisawa, H
      Realization of Cu(111) single-oriented state on SiO2 by annealing Cu-Zr film and the thermal stability of Cu-Zr/ZrN/Zr/Si contact system

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
    60. Lin, CL; Ku, SR; Chen, MC
      Reactively sputtered amorphous TaSixNy films serving as barrier layer against copper diffusion

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
    61. Miyake, H; Yanagisawa, H; Sasaki, K; Shinkai, S; Abe, Y
      Preparation of a contact system with a single-oriented (111)Al overlayer by interposing a thin ZrN/Zr bilayered barrier applicable to sub-0.25-mu m design rule

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
    62. Wang, SJ; Tsai, HY; Sun, SC
      Characterization of tungsten carbide as diffusion barrier for Cu metallization

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
    63. Lee, SG; Kim, YJ; Lee, SP; Oh, HS; Lee, SJ; Kim, M; Kim, IG; Kim, JH; Shin, HJ; Hong, JG; Lee, HD; Kang, HK
      Low dielectric constant 3MS alpha-SiC : H as Cu diffusion barrier layer inCu dual damascene process

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
    64. Sakoda, T; Moise, TS; Summerfelt, SR; Colombo, L; Xing, GQ; Gilbert, SR; Loke, ALS; Ma, SM; Kavari, R; Wills, LA; Amano, J
      Hydrogen-robust submicron IrOx/Pb(Zr,Ti)O-3/Ir capacitors for embedded ferroelectric memory

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
    65. Lee, W; Cho, H; Cho, B; Yang, HJ; Kim, J; Kim, YS; Jung, WG; Kwon, H; Lee, J; Reucroft, PJ; Lee, C; Lee, E; Lee, J
      Thermal stability enhancement of Cu interconnects by employing a self-aligned MgO layer obtained from a Cu(Mg) alloy film

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
    66. Kim, DJ; Sim, HS; Lee, S; Kim, YT; Kim, SI; Park, JW
      Improvement of the reliability of a Cu/W-N/SiOF multilevel interconnect byinserting plasma enhanced chemical vapor deposited W-N thin film

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
    67. Belyansky, M; Trenary, M
      Structure of heteroepitaxial thin films of hafnium diboride grown on a Hf(0001) surface as determined by scanning tunneling microscopy

      JOURNAL OF PHYSICAL CHEMISTRY B
    68. Lee, YK; Latt, KM; Jaehyung, K; Lee, K
      Study of diffusion barrier properties of ionized metal plasma (IMP) deposited TaN between Cu and SiO2

      MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
    69. Lee, YK; Latt, KM; Osipowicz, T; Sher-Yi, C
      Study of diffusion barrier properties of ternary alloy (TixAlyNz) in Cu/TixAlyNz/SiO2/Si thin film structure

      MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
    70. Byrod, G; Rydevik, B; Johansson, BR; Olmarker, K
      Transport of epidurally applied horseradish peroxidase to the endoneurial space of dorsal root ganglia: A light and electron microscopic study

      JOURNAL OF THE PERIPHERAL NERVOUS SYSTEM
    71. Matsuki, T; Duling, BR
      TNF-alpha modulates arteriolar reactivity secondary to a change in intimalpermeability

      MICROCIRCULATION
    72. Wang, MT; Chuang, MH; Chen, LJ; Chen, MC
      Effects of composition and N-2 plasma treatment on the barrier effectiveness of chemically vapor deposited WSix films

      JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B
    73. Chaplanov, AM; Shcherbakova, EN
      Phase transformations and changes in the electrophysical properties of Ti-Si contacts irradiated by a nitrogen-hydrogen plasma

      TECHNICAL PHYSICS
    74. Norga, GJ; Wouters, DJ
      Bottom electrode and barrier materials issues in stacked capacitor type ferroelectric memories

      INTEGRATED FERROELECTRICS
    75. Letendu, F; Hugon, MC; Desvignes, JM; Agius, B; Vickridge, I; Kim, DJ; Kingon, AI
      Oxidation resistance of TaSiN diffusion barriers

      INTEGRATED FERROELECTRICS
    76. Senzaki, Y; Hochberg, AK; Norman, JAT
      MOCVD of high-k dielectrics, tantalum nitride and copper from directly injected liquid precursors

      ADVANCED MATERIALS FOR OPTICS AND ELECTRONICS
    77. Zhu, YF; Yan, PY; Yi, T; Cao, LL; Li, LT
      Effects of Pt diffusion barrier layer on the interface reaction and electric properties of PZT film/Si(111) sample

      CHINESE JOURNAL OF CHEMISTRY
    78. Hsieh, YW; Luo, JS; Lin, WT; Chang, TC; Pan, FM
      Improvement of the (111) texture and microstructures of Cu films by pulsedlaser annealing

      JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS
    79. Choy, KL; Balzer, R; Rawlings, RD
      Diffusion barrier coatings on ductile particles for protection in bioactive glass-ceramic matrix

      JOURNAL OF THE EUROPEAN CERAMIC SOCIETY
    80. Beaucarne, G; Bourdais, S; Slaoui, A; Poortmans, J
      Impurity diffusion from uncoated foreign substrates during high temperature CVD for thin-film Si solar cells

      SOLAR ENERGY MATERIALS AND SOLAR CELLS
    81. Poghossian, A; Thust, M; Schoning, MJ; Muller-Veggian, M; Kordos, P; Luth, H
      Cross-sensitivity of a capacitive penicillin sensor combined with a diffusion barrier

      SENSORS AND ACTUATORS B-CHEMICAL
    82. Lee, YK; Latt, KM; Jaehyung, K; Osipowicz, T; Sher-Yi, C; Lee, K
      Comparative analysis and study of ionized metal plasma (IMP)-Cu and chemical vapor deposition (CVD)-Cu on diffusion barrier properties of IMP-TaN on SiO2

      MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY
    83. Lee, YK; Latt, KM; Li, S; Osipowicz, T; Chiam, SY
      Characterization of interfacial reactions between ionized metal plasma deposited Al-0.5 wt.% Cu and Ti on SiO2

      MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY
    84. Mangat, PJS; Dauksher, WJ; Whig, R; O'Brien, WL
      Surface modification and cleaning enhancement of TaSi(N) films with dilutehydrofluoric acid

      JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS
    85. Ganter, G; Duquette, M; Dunn, K
      Separation of root nodule cells and identification of tissue-specific genes

      PLANT CELL REPORTS
    86. No, JT; O, JH; Lee, C
      Evaluation of Ti-Si-N as a diffusion barrier between copper and silicon

      MATERIALS CHEMISTRY AND PHYSICS
    87. Klaus, JW; Ferro, SJ; George, SM
      Atomically controlled growth of tungsten and tungsten nitride using sequential surface reactions

      APPLIED SURFACE SCIENCE
    88. Machac, P; Myslik, V; Nahlik, J
      The thermal stability of laser annealed contacts based on palladium

      MICROELECTRONIC ENGINEERING
    89. Chaplanov, AM; Shcherbakova, EN
      Treatment of Ti-Si contact in hydronitrogen plasma

      MICROELECTRONIC ENGINEERING
    90. Theron, CC; Mars, JA; Mundalamo, FJ; Farmer, J; Pretorius, R
      Formation of smooth interfaces during silicide growth utilizing a diffusion barrier

      MICROELECTRONIC ENGINEERING
    91. Motte, P; Proust, M; Torres, J; Gobil, Y; Morand, Y; Palleau, J; Pantel, R; Juhel, M
      TiN-CVD process optimization for integration with Cu-CVD

      MICROELECTRONIC ENGINEERING
    92. Fischer, D; Scherg, T; Bauer, JG; Schulze, HJ; Wenzel, C
      Study of Ta-Si-N thin films for use as barrier layer in copper metallizations

      MICROELECTRONIC ENGINEERING
    93. Le Brizoual, L; Guilet, S; Lemperiere, G; Granier, A; Coulon, N; Lancin, M; Turban, G
      Analysis of Ti-Si-N diffusion barrier films obtained by r.f. magnetron sputtering

      MICROELECTRONIC ENGINEERING
    94. Tachibana, A; Nakamura, K
      Quantum chemical study of aluminum CVD reaction for titanium nitride (111)surface with terminal fluorine

      JOURNAL OF MOLECULAR STRUCTURE-THEOCHEM
    95. James, EK; Iannetta, PPM; Deeks, L; Sprent, JI; Minchin, FR
      Detopping causes production of intercellular space occlusions in both the cortex and infected region of soybean nodules

      PLANT CELL AND ENVIRONMENT
    96. Vertoprakhov, VN; Krupoder, SA
      Preparation of thin copper films from the vapour phase of volatile copper(I) and copper(II) derivatives by the CVD method

      USPEKHI KHIMII
    97. Chen, L; Magtoto, N; Ekstrom, B; Kelber, J
      Effect of surface impurities on the Cu/Ta interface

      THIN SOLID FILMS
    98. Moshfegh, AZ; Akhavan, O
      Bias sputtered Ta modified diffusion barrier in Cu/Ta(V-b)/Si(111) structures

      THIN SOLID FILMS
    99. Galvez, S; Hirsch, AM; Wycoff, KL; Hunt, S; Layzell, DB; Kondorosi, A; Crespi, M
      Oxygen regulation of a nodule-located carbonic anhydrase in alfalfa

      PLANT PHYSIOLOGY
    100. Lundquist, PO
      Nitrogenase activity in Alnus incana root nodules. Responses to O-2 and short-term N-2 deprivation

      PLANT PHYSIOLOGY


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Documento generato il 24/01/21 alle ore 10:51:48