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22. Lin, KL; Hsu, HM
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23. Wang, SJ; Tsai, HY; Sun, SC; Shiao, MH
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25. Kizil, H; Kim, G; Steinbruchel, C; Zhao, B
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26. Inberg, A; Shacham-Diamand, Y; Rabinovich, E; Golan, G; Croitoru, N
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28. Shi, JR; Lau, SP; Sun, Z; Shi, X; Tay, BK; Tan, HS
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33. Paul, A; Elmrabet, S; Alves, LC; da Silva, MF; Soares, JC; Odriozola, JA
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57. Cho, IH; Park, JS; Sohn, DK; Ha, JH
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    Thermal stability enhancement of Cu interconnects by employing a self-aligned MgO layer obtained from a Cu(Mg) alloy film
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    W. Lee et al., "Thermal stability enhancement of Cu interconnects by employing a self-aligned MgO layer obtained from a Cu(Mg) alloy film", JPN J A P 1, 40(4A), 2001, pp. 2408-2412
66. Kim, DJ; Sim, HS; Lee, S; Kim, YT; Kim, SI; Park, JW
    Improvement of the reliability of a Cu/W-N/SiOF multilevel interconnect byinserting plasma enhanced chemical vapor deposited W-N thin film
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
    
    D.J. Kim et al., "Improvement of the reliability of a Cu/W-N/SiOF multilevel interconnect byinserting plasma enhanced chemical vapor deposited W-N thin film", JPN J A P 1, 40(3A), 2001, pp. 1214-1217
67. Belyansky, M; Trenary, M
    Structure of heteroepitaxial thin films of hafnium diboride grown on a Hf(0001) surface as determined by scanning tunneling microscopy
    JOURNAL OF PHYSICAL CHEMISTRY B
    
    M. Belyansky e M. Trenary, "Structure of heteroepitaxial thin films of hafnium diboride grown on a Hf(0001) surface as determined by scanning tunneling microscopy", J PHYS CH B, 104(50), 2000, pp. 11833-11836
68. Lee, YK; Latt, KM; Jaehyung, K; Lee, K
    Study of diffusion barrier properties of ionized metal plasma (IMP) deposited TaN between Cu and SiO2
    MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
    
    Y.K. Lee et al., "Study of diffusion barrier properties of ionized metal plasma (IMP) deposited TaN between Cu and SiO2", MAT SC S PR, 3(3), 2000, pp. 179-184
69. Lee, YK; Latt, KM; Osipowicz, T; Sher-Yi, C
    Study of diffusion barrier properties of ternary alloy (TixAlyNz) in Cu/TixAlyNz/SiO2/Si thin film structure
    MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
    
    Y.K. Lee et al., "Study of diffusion barrier properties of ternary alloy (TixAlyNz) in Cu/TixAlyNz/SiO2/Si thin film structure", MAT SC S PR, 3(3), 2000, pp. 191-194
70. Byrod, G; Rydevik, B; Johansson, BR; Olmarker, K
    Transport of epidurally applied horseradish peroxidase to the endoneurial space of dorsal root ganglia: A light and electron microscopic study
    JOURNAL OF THE PERIPHERAL NERVOUS SYSTEM
    
    G. Byrod et al., "Transport of epidurally applied horseradish peroxidase to the endoneurial space of dorsal root ganglia: A light and electron microscopic study", J PERIPH N, 5(4), 2000, pp. 218-226
71. Matsuki, T; Duling, BR
    TNF-alpha modulates arteriolar reactivity secondary to a change in intimalpermeability
    MICROCIRCULATION
    
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72. Wang, MT; Chuang, MH; Chen, LJ; Chen, MC
    Effects of composition and N-2 plasma treatment on the barrier effectiveness of chemically vapor deposited WSix films
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B
    
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73. Chaplanov, AM; Shcherbakova, EN
    Phase transformations and changes in the electrophysical properties of Ti-Si contacts irradiated by a nitrogen-hydrogen plasma
    TECHNICAL PHYSICS
    
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74. Norga, GJ; Wouters, DJ
    Bottom electrode and barrier materials issues in stacked capacitor type ferroelectric memories
    INTEGRATED FERROELECTRICS
    
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75. Letendu, F; Hugon, MC; Desvignes, JM; Agius, B; Vickridge, I; Kim, DJ; Kingon, AI
    Oxidation resistance of TaSiN diffusion barriers
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76. Senzaki, Y; Hochberg, AK; Norman, JAT
    MOCVD of high-k dielectrics, tantalum nitride and copper from directly injected liquid precursors
    ADVANCED MATERIALS FOR OPTICS AND ELECTRONICS
    
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77. Zhu, YF; Yan, PY; Yi, T; Cao, LL; Li, LT
    Effects of Pt diffusion barrier layer on the interface reaction and electric properties of PZT film/Si(111) sample
    CHINESE JOURNAL OF CHEMISTRY
    
    Y.F. Zhu et al., "Effects of Pt diffusion barrier layer on the interface reaction and electric properties of PZT film/Si(111) sample", CHIN J CHEM, 18(3), 2000, pp. 328-334
78. Hsieh, YW; Luo, JS; Lin, WT; Chang, TC; Pan, FM
    Improvement of the (111) texture and microstructures of Cu films by pulsedlaser annealing
    JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS
    
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79. Choy, KL; Balzer, R; Rawlings, RD
    Diffusion barrier coatings on ductile particles for protection in bioactive glass-ceramic matrix
    JOURNAL OF THE EUROPEAN CERAMIC SOCIETY
    
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80. Beaucarne, G; Bourdais, S; Slaoui, A; Poortmans, J
    Impurity diffusion from uncoated foreign substrates during high temperature CVD for thin-film Si solar cells
    SOLAR ENERGY MATERIALS AND SOLAR CELLS
    
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81. Poghossian, A; Thust, M; Schoning, MJ; Muller-Veggian, M; Kordos, P; Luth, H
    Cross-sensitivity of a capacitive penicillin sensor combined with a diffusion barrier
    SENSORS AND ACTUATORS B-CHEMICAL
    
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82. Lee, YK; Latt, KM; Jaehyung, K; Osipowicz, T; Sher-Yi, C; Lee, K
    Comparative analysis and study of ionized metal plasma (IMP)-Cu and chemical vapor deposition (CVD)-Cu on diffusion barrier properties of IMP-TaN on SiO2
    MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY
    
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83. Lee, YK; Latt, KM; Li, S; Osipowicz, T; Chiam, SY
    Characterization of interfacial reactions between ionized metal plasma deposited Al-0.5 wt.% Cu and Ti on SiO2
    MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY
    
    Y.K. Lee et al., "Characterization of interfacial reactions between ionized metal plasma deposited Al-0.5 wt.% Cu and Ti on SiO2", MAT SCI E B, 77(1), 2000, pp. 101-105
84. Mangat, PJS; Dauksher, WJ; Whig, R; O'Brien, WL
    Surface modification and cleaning enhancement of TaSi(N) films with dilutehydrofluoric acid
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS
    
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85. Ganter, G; Duquette, M; Dunn, K
    Separation of root nodule cells and identification of tissue-specific genes
    PLANT CELL REPORTS
    
    G. Ganter et al., "Separation of root nodule cells and identification of tissue-specific genes", PL CELL REP, 19(9), 2000, pp. 921-925
86. No, JT; O, JH; Lee, C
    Evaluation of Ti-Si-N as a diffusion barrier between copper and silicon
    MATERIALS CHEMISTRY AND PHYSICS
    
    J.T. No et al., "Evaluation of Ti-Si-N as a diffusion barrier between copper and silicon", MATER CH PH, 63(1), 2000, pp. 44-49
87. Klaus, JW; Ferro, SJ; George, SM
    Atomically controlled growth of tungsten and tungsten nitride using sequential surface reactions
    APPLIED SURFACE SCIENCE
    
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88. Machac, P; Myslik, V; Nahlik, J
    The thermal stability of laser annealed contacts based on palladium
    MICROELECTRONIC ENGINEERING
    
    P. Machac et al., "The thermal stability of laser annealed contacts based on palladium", MICROEL ENG, 54(3-4), 2000, pp. 255-261
89. Chaplanov, AM; Shcherbakova, EN
    Treatment of Ti-Si contact in hydronitrogen plasma
    MICROELECTRONIC ENGINEERING
    
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90. Theron, CC; Mars, JA; Mundalamo, FJ; Farmer, J; Pretorius, R
    Formation of smooth interfaces during silicide growth utilizing a diffusion barrier
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91. Motte, P; Proust, M; Torres, J; Gobil, Y; Morand, Y; Palleau, J; Pantel, R; Juhel, M
    TiN-CVD process optimization for integration with Cu-CVD
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92. Fischer, D; Scherg, T; Bauer, JG; Schulze, HJ; Wenzel, C
    Study of Ta-Si-N thin films for use as barrier layer in copper metallizations
    MICROELECTRONIC ENGINEERING
    
    D. Fischer et al., "Study of Ta-Si-N thin films for use as barrier layer in copper metallizations", MICROEL ENG, 50(1-4), 2000, pp. 459-464
93. Le Brizoual, L; Guilet, S; Lemperiere, G; Granier, A; Coulon, N; Lancin, M; Turban, G
    Analysis of Ti-Si-N diffusion barrier films obtained by r.f. magnetron sputtering
    MICROELECTRONIC ENGINEERING
    
    L. Le Brizoual et al., "Analysis of Ti-Si-N diffusion barrier films obtained by r.f. magnetron sputtering", MICROEL ENG, 50(1-4), 2000, pp. 509-513
94. Tachibana, A; Nakamura, K
    Quantum chemical study of aluminum CVD reaction for titanium nitride (111)surface with terminal fluorine
    JOURNAL OF MOLECULAR STRUCTURE-THEOCHEM
    
    A. Tachibana e K. Nakamura, "Quantum chemical study of aluminum CVD reaction for titanium nitride (111)surface with terminal fluorine", J MOL ST-TH, 506, 2000, pp. 273-286
95. James, EK; Iannetta, PPM; Deeks, L; Sprent, JI; Minchin, FR
    Detopping causes production of intercellular space occlusions in both the cortex and infected region of soybean nodules
    PLANT CELL AND ENVIRONMENT
    
    E.K. James et al., "Detopping causes production of intercellular space occlusions in both the cortex and infected region of soybean nodules", PL CELL ENV, 23(4), 2000, pp. 377-386
96. Vertoprakhov, VN; Krupoder, SA
    Preparation of thin copper films from the vapour phase of volatile copper(I) and copper(II) derivatives by the CVD method
    USPEKHI KHIMII
    
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97. Chen, L; Magtoto, N; Ekstrom, B; Kelber, J
    Effect of surface impurities on the Cu/Ta interface
    THIN SOLID FILMS
    
    L. Chen et al., "Effect of surface impurities on the Cu/Ta interface", THIN SOL FI, 376(1-2), 2000, pp. 115-123
98. Moshfegh, AZ; Akhavan, O
    Bias sputtered Ta modified diffusion barrier in Cu/Ta(V-b)/Si(111) structures
    THIN SOLID FILMS
    
    A.Z. Moshfegh e O. Akhavan, "Bias sputtered Ta modified diffusion barrier in Cu/Ta(V-b)/Si(111) structures", THIN SOL FI, 370(1-2), 2000, pp. 10-17
99. Galvez, S; Hirsch, AM; Wycoff, KL; Hunt, S; Layzell, DB; Kondorosi, A; Crespi, M
    Oxygen regulation of a nodule-located carbonic anhydrase in alfalfa
    PLANT PHYSIOLOGY
    
    S. Galvez et al., "Oxygen regulation of a nodule-located carbonic anhydrase in alfalfa", PLANT PHYSL, 124(3), 2000, pp. 1059-1068
100. Lundquist, PO
     Nitrogenase activity in Alnus incana root nodules. Responses to O-2 and short-term N-2 deprivation
     PLANT PHYSIOLOGY
     
     P.O. Lundquist, "Nitrogenase activity in Alnus incana root nodules. Responses to O-2 and short-term N-2 deprivation", PLANT PHYSL, 122(2), 2000, pp. 553-561