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1. Kruger, T; Sax, AF
   Distorted silicon hydrides - A comparative study with various density functionals
   JOURNAL OF COMPUTATIONAL CHEMISTRY
   
   T. Kruger e A.F. Sax, "Distorted silicon hydrides - A comparative study with various density functionals", J COMPUT CH, 22(2), 2001, pp. 151-161
2. Schropp, REI
   Status of Cat-CVD (Hot-Wire CVD) research in Europe
   THIN SOLID FILMS
   
   R.E.I. Schropp, "Status of Cat-CVD (Hot-Wire CVD) research in Europe", THIN SOL FI, 395(1-2), 2001, pp. 17-24
3. Nozaki, Y; Kitazoe, M; Horii, K; Umemoto, H; Masuda, A; Matsumura, H
   Identification and gas phase kinetics of radical species in Cat-CVD processes of SiH4
   THIN SOLID FILMS
   
   Y. Nozaki et al., "Identification and gas phase kinetics of radical species in Cat-CVD processes of SiH4", THIN SOL FI, 395(1-2), 2001, pp. 47-50
4. Brockhoff, AM; van der Weg, WF; Habraken, FHPM
   Hot-wire produced atomic hydrogen: effects during and after amorphous-silicon deposition
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   A.M. Brockhoff et al., "Hot-wire produced atomic hydrogen: effects during and after amorphous-silicon deposition", THIN SOL FI, 395(1-2), 2001, pp. 87-91
5. Dusane, RO; Bauer, S; Schroder, B; Oechsner, H
   Is the nucleation and coalescence behavior in the growth of a-Si : H filmsprepared by the CAT-CVD different?
   THIN SOLID FILMS
   
   R.O. Dusane et al., "Is the nucleation and coalescence behavior in the growth of a-Si : H filmsprepared by the CAT-CVD different?", THIN SOL FI, 395(1-2), 2001, pp. 121-124
6. Dusane, RO; Diehl, F; Weber, U; Schroder, B
   Highly conducting doped microcrystalline silicon (mu c-Si : H) at very lowsubstrate temperature by Cat-CVD
   THIN SOLID FILMS
   
   R.O. Dusane et al., "Highly conducting doped microcrystalline silicon (mu c-Si : H) at very lowsubstrate temperature by Cat-CVD", THIN SOL FI, 395(1-2), 2001, pp. 202-205
7. Rath, JK; Stannowski, B; van Veenendaal, PATT; van Veen, MK; Schropp, REI
   Application of hot-wire chemical vapor-deposited Si : H films in thin filmtransistors and solar cells
   THIN SOLID FILMS
   
   J.K. Rath et al., "Application of hot-wire chemical vapor-deposited Si : H films in thin filmtransistors and solar cells", THIN SOL FI, 395(1-2), 2001, pp. 320-329
8. Brockhoff, AM; van der Weg, WF; Habraken, FHPM
   The effects of hot-wire atomic hydrogen on amorphous silicon
   JOURNAL OF APPLIED PHYSICS
   
   A.M. Brockhoff et al., "The effects of hot-wire atomic hydrogen on amorphous silicon", J APPL PHYS, 89(5), 2001, pp. 2993-3000
9. Kessels, WMM; Severens, RJ; Smets, AHM; Korevaar, BA; Adriaenssens, GJ; Schram, DC; van de Sanden, MCM
   Hydrogenated amorphous silicon deposited at very high growth rates by an expanding Ar-H-2-SiH4 plasma
   JOURNAL OF APPLIED PHYSICS
   
   W.M.M. Kessels et al., "Hydrogenated amorphous silicon deposited at very high growth rates by an expanding Ar-H-2-SiH4 plasma", J APPL PHYS, 89(4), 2001, pp. 2404-2413
10. Davis, RP; Abreu, RA
    Development and qualification of a vacuum pumping system for metalorganic vapor phase epitaxy copper precursors
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B
    
    R.P. Davis e R.A. Abreu, "Development and qualification of a vacuum pumping system for metalorganic vapor phase epitaxy copper precursors", J VAC SCI B, 18(6), 2000, pp. 2794-2798
11. Vertoprakhov, VN; Krupoder, SA
    Preparation of thin copper films from the vapour phase of volatile copper(I) and copper(II) derivatives by the CVD method
    USPEKHI KHIMII
    
    V.N. Vertoprakhov e S.A. Krupoder, "Preparation of thin copper films from the vapour phase of volatile copper(I) and copper(II) derivatives by the CVD method", USP KH, 69(12), 2000, pp. 1149-1177
12. Unold, T; Bruggemann, R; Kleider, JP; Longeaud, C
    Anisotropy in the transport of microcrystalline silicon
    JOURNAL OF NON-CRYSTALLINE SOLIDS
    
    T. Unold et al., "Anisotropy in the transport of microcrystalline silicon", J NON-CRYST, 266, 2000, pp. 325-330
13. Stannowski, B; Brockhoff, AM; Nascetti, A; Schropp, REI
    Metastability of hot-wire amorphous-silicon thin-film transistors
    JOURNAL OF NON-CRYSTALLINE SOLIDS
    
    B. Stannowski et al., "Metastability of hot-wire amorphous-silicon thin-film transistors", J NON-CRYST, 266, 2000, pp. 464-468
14. Nozaki, Y; Kongo, K; Miyazaki, T; Kitazoe, M; Horii, K; Umemoto, H; Masuda, A; Matsumura, H
    Identification of Si and SiH in catalytic chemical vapor deposition of SiH4 by laser induced fluorescence spectroscopy
    JOURNAL OF APPLIED PHYSICS
    
    Y. Nozaki et al., "Identification of Si and SiH in catalytic chemical vapor deposition of SiH4 by laser induced fluorescence spectroscopy", J APPL PHYS, 88(9), 2000, pp. 5437-5443
15. Mahan, AH; Gedvilas, LM; Webb, JD
    Si-H bonding in low hydrogen content amorphous silicon films as probed by infrared spectroscopy and x-ray diffraction
    JOURNAL OF APPLIED PHYSICS
    
    A.H. Mahan et al., "Si-H bonding in low hydrogen content amorphous silicon films as probed by infrared spectroscopy and x-ray diffraction", J APPL PHYS, 87(4), 2000, pp. 1650-1658
16. Hazra, S; Middya, AR; Longeaud, C; Ray, S
    Features of hydrogenated amorphous silicon films developed under an unexplored region of parameter space of radio-frequency plasma-enhanced chemical vapor deposition
    APPLIED PHYSICS LETTERS
    
    S. Hazra et al., "Features of hydrogenated amorphous silicon films developed under an unexplored region of parameter space of radio-frequency plasma-enhanced chemical vapor deposition", APPL PHYS L, 76(17), 2000, pp. 2340-2342
17. Yamanaka, S; Watanabe, H; Masai, S; Sekiguchi, T; Takeuchi, D; Okushi, H; Kajimura, K
    Synthesis and characterization of device-quality B-doped homoepitaxial diamond films
    NEW DIAMOND AND FRONTIER CARBON TECHNOLOGY
    
    S. Yamanaka et al., "Synthesis and characterization of device-quality B-doped homoepitaxial diamond films", NEW DIAM FR, 9(2), 1999, pp. 118-121
18. Feenstra, KF; Alkemade, PFA; Algra, E; Schropp, REI; van der Weg, WF
    Effect of post-deposition treatments on the hydrogenation of hot-wire deposited amorphous silicon films
    PROGRESS IN PHOTOVOLTAICS
    
    K.F. Feenstra et al., "Effect of post-deposition treatments on the hydrogenation of hot-wire deposited amorphous silicon films", PROG PHOTOV, 7(5), 1999, pp. 341-351
19. Jin, HJ; Shiratani, M; Kawasaki, T; Fukuzawa, T; Kinoshita, T; Watanabe, Y; Kawasaki, H; Toyofuku, M
    Plasma-enhanced metal organic chemical vapor deposition of high purity copper thin films using plasma reactor with the H atom source
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS
    
    H.J. Jin et al., "Plasma-enhanced metal organic chemical vapor deposition of high purity copper thin films using plasma reactor with the H atom source", J VAC SCI A, 17(3), 1999, pp. 726-730
20. Lakshmanan, SK; Gill, WN
    A novel model of hydrogen plasma assisted chemical vapor deposition of copper
    THIN SOLID FILMS
    
    S.K. Lakshmanan e W.N. Gill, "A novel model of hydrogen plasma assisted chemical vapor deposition of copper", THIN SOL FI, 338(1-2), 1999, pp. 24-39
21. Jin, HJ; Shiratani, M; Nakatake, Y; Fukuzawa, T; Kinoshita, T; Watanabe, Y; Toyofuku, M
    Conformal deposition of high-purity copper using plasma reactor with H atom source
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
    
    H.J. Jin et al., "Conformal deposition of high-purity copper using plasma reactor with H atom source", JPN J A P 1, 38(7B), 1999, pp. 4492-4495
22. WALLINGA J; ARNOLDBIK WM; VREDENBERG AM; SCHROPP REI; VANDERWEG WF
    REDUCTION OF TIN OXIDE BY HYDROGEN RADICALS
    JOURNAL OF PHYSICAL CHEMISTRY B
    
    J. Wallinga et al., "REDUCTION OF TIN OXIDE BY HYDROGEN RADICALS", JOURNAL OF PHYSICAL CHEMISTRY B, 102(32), 1998, pp. 6219-6224
23. LAKSHMANAN SK; GILL WN
    EXPERIMENTS ON THE PLASMA-ASSISTED CHEMICAL-VAPOR-DEPOSITION OF COPPER
    Journal of vacuum science & technology. A. Vacuum, surfaces, and films
    
    S.K. Lakshmanan e W.N. Gill, "EXPERIMENTS ON THE PLASMA-ASSISTED CHEMICAL-VAPOR-DEPOSITION OF COPPER", Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 16(4), 1998, pp. 2187-2197
24. BROCKHOFF AM; ULLERSMA EHC; MEILING H; HABRAKEN FHPM; VANDERWEG WF
    STRUCTURE AND HYDROGEN CONTENT OF STABLE HOT-WIRE-DEPOSITED AMORPHOUS-SILICON
    Applied physics letters
    
    A.M. Brockhoff et al., "STRUCTURE AND HYDROGEN CONTENT OF STABLE HOT-WIRE-DEPOSITED AMORPHOUS-SILICON", Applied physics letters, 73(22), 1998, pp. 3244-3246
25. GOLIKOVA OA; KUZNETSOV AN; KUDOYAROVA VK; KAZANIN MM
    CHARACTERISTIC STRUCTURAL FEATURES OF AMORPHOUS HYDRATED SILICON FILMS DEPOSITED BY DIRECT-CURRENT DECOMPOSITION OF SILANE IN A MAGNETIC-FIELD
    Semiconductors
    
    O.A. Golikova et al., "CHARACTERISTIC STRUCTURAL FEATURES OF AMORPHOUS HYDRATED SILICON FILMS DEPOSITED BY DIRECT-CURRENT DECOMPOSITION OF SILANE IN A MAGNETIC-FIELD", Semiconductors, 31(7), 1997, pp. 691-694
26. HAZRA S; MIDDYA AR; RAY S
    REDUCTION OF LIGHT-INDUCED METASTABLE CHANGES IN A-SIGE-H PREPARED BYUSING HELIUM DILUTION - COMPARISON OF METASTABILITY OF HELIUM-DILUTEDAND HYDROGEN-DILUTED A-SIGE-H ALLOYS
    Journal of physics. D, Applied physics
    
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27. MOLENBROEK EC; MAHAN AH; GALLAGHER A
    MECHANISMS INFLUENCING HOT-WIRE DEPOSITION OF HYDROGENATED AMORPHOUS-SILICON
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28. KUMBHAR AA; KSHIRSAGAR ST
    COMPARATIVE-STUDY OF PROPERTIES OF A-SI-H FILMS PRODUCED BY HOT-FILAMENT CVD, GLOW-DISCHARGE CVD AND THEIR HYBRID VERSION
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29. GODET C; CABARROCAS PRI
    ROLE OF SI-H BONDING IN A-SI-H METASTABILITY
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30. PINKAS J; HUFFMAN JC; BAXTER DV; CHISHOLM MH; CAULTON KG
    MECHANISTIC ROLE OF H2O AND THE LIGAND IN THE CHEMICAL-VAPOR-DEPOSITION OF CU, CU2O, CUO, AND CU3N FROM 1,1,5,5,5-HEXAFLUOROPENTANE-2,4-DIONATO)COPPER(II)
    Chemistry of materials
    
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31. ZHENG B; GOLDBERG C; EISENBRAUN ET; LIU J; KALOYEROS AE; TOSCANO PJ; MURARKA SP; LOAN JF; SULLIVAN J
    IN-SITU QUADRUPOLE MASS-SPECTROSCOPY STUDIES OF WATER AND SOLVENT COORDINATION TO COPPER(II) BETA-DIKETONATE PRECURSORS - IMPLICATIONS FOR THE CHEMICAL-VAPOR-DEPOSITION OF COPPER
    Materials chemistry and physics
    
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32. SETH T; DIXIT PN; MUKHERJEE C; ANANDAN C; BHATTACHARYYA R
    HYDROGENATED AMORPHOUS-SILICON FILMS PREPARED AT LOW SUBSTRATE-TEMPERATURE ON A CATHODE OF AN ASYMMETRIC RF PLASMA CVD SYSTEM
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33. BEDAIR SM
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    Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena
    
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35. CHIANG CM; MILLER TM; DUBOIS LH
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36. ZHOU ZH; AYDIL ES; GOTTSCHO RA; CHABAL YJ; REIF R
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