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La ricerca find articoli where soggetti phrase all words 'DEFECT FORMATION' sort by level,fasc_key/DESCEND, pagina_ini_num/ASCEND ha restituito 171 riferimenti
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    1. Yokokawa, H; Sakai, N; Horita, T; Yamaji, K
      Recent topics on oxide ion conductors

      ELECTROCHEMISTRY
    2. Akazawa, H
      Formation of Si-Si bonds and precipitation of Si nanocrystals in vacuum-ultraviolet-irradiated a-SiO2 films

      JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B
    3. Sidorov, YG; Dvoretskii, SA; Varavin, VS; Mikhailov, NN; Yakushev, MV; Sabinina, IV
      Molecular-beam epitaxy of mercury-cadmium-telluride solid solutions on alternative substrates

      SEMICONDUCTORS
    4. Dziarmaga, J; Sadzikowski, M
      Domain wall formation in the Cahn-Hilliard-Cook equation - art. no. 036112

      PHYSICAL REVIEW E
    5. Pan, BC
      Tight-binding potential with correction of bonding environment for silicon-hydrogen

      ACTA PHYSICA SINICA
    6. Wang, SZ; He, JB
      Defects analysis in single crystalline 6H-SiC at different PVT growth stages

      MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY
    7. Lucovsky, G
      Transition from thermally grown gate dielectrics to deposited gate dielectrics for advanced silicon devices: A classification scheme based on bond ionicity

      JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS
    8. Bettencourt, LMA
      Properties of the Langevin and Fokker-Planck equations for scalar fields and their application to the dynamics of second order phase transitions - art. no. 045020

      PHYSICAL REVIEW D
    9. Prentice, JSC
      Sensitivity of solutions of Poisson's equation to boundary values in p-type a-Si : H thin films

      SEMICONDUCTOR SCIENCE AND TECHNOLOGY
    10. Posselt, M; Belko, V; Chagarov, E
      Influence of polytypism on elementary processes of ion-beam-induced defectproduction in SiC

      NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS
    11. Heck, C; Chayahara, A; Horino, Y; Yokota, Y; Miranda, RM; Antunes, AB; Miranda, MM; Baibich, MN
      Electronic transport in thin Cr films modified by Fe ion implantation

      NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS
    12. Cheang-Wong, JC; Oliver, A; Roiz, J; Hernandez, JM; Rodriguez-Fernandez, L; Morales, JG; Crespo-Sosa, A
      Optical properties of Ir2+-implanted silica glass

      NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS
    13. Glinka, YD; Lin, SH; Hwang, LP; Chen, YT; Tolk, NH
      Size effect in self-trapped exciton photoluminescence from SiO2-based nanoscale materials - art. no. 085421

      PHYSICAL REVIEW B
    14. Aranson, IS; Kopnin, NB; Vinokur, VM
      Dynamics of vortex nucleation by rapid thermal quench - art. no. 184501

      PHYSICAL REVIEW B
    15. Beck, KM; Joly, AG; Hess, WP
      Evidence for a surface exciton in KBr via laser desorption - art. no. 125423

      PHYSICAL REVIEW B
    16. Gueorguiev, YM; Kogler, R; Peeva, A; Panknin, D; Mucklich, A; Yankov, RA; Skorupa, W
      Trans-projected-range effect in proximity gettering of impurities in silicon

      VACUUM
    17. Hosono, H; Ikuta, Y; Kinoshita, T; Kajihara, K; Hirano, M
      Physical disorder and optical properties in the vacuum ultraviolet region of amorphous SiO2 - art. no. 175501

      PHYSICAL REVIEW LETTERS
    18. Rivers, RJ
      Zurek-Kibble causality bounds in time-dependent Ginzburg-Landau theory andquantum field theory

      JOURNAL OF LOW TEMPERATURE PHYSICS
    19. Monaco, R; Rivers, R; Kavoussanaki, E
      Testing the Zurek-Kibble causality bounds with annular Josephson tunnel junctions

      JOURNAL OF LOW TEMPERATURE PHYSICS
    20. Dey, S; Varma, S
      Anomalous behavior of Sb implanted Si after mega-electron-volt carbon irradiation

      JOURNAL OF APPLIED PHYSICS
    21. Hsu, L; Walukiewicz, W
      Effect of polarization fields on transport properties in AlGaN/GaN heterostructures

      JOURNAL OF APPLIED PHYSICS
    22. Kanashima, T; Maida, O; Kohma, N; Agata, M; Yudate, S; Ueno, M; Okuyama, M; Ohashi, H
      Synchrotron radiation-induced nitrization and oxidation on Si surface at low temperature

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
    23. Glinka, YD; Lin, SH; Hwang, LP; Chen, YT
      Photoluminescence spectroscopy of silica-based mesoporous materials

      JOURNAL OF PHYSICAL CHEMISTRY B
    24. Lucovsky, G; Yang, H; Niimi, H; Keister, JW; Rowe, JE; Thorpe, MF; Phillips, JC
      Intrinsic limitations on device performance and reliability from bond-constraint induced transition regions at interfaces of stacked dielectrics

      JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B
    25. Boyarkina, NI; Vasil'ev, AV
      Contribution of the electron subsystem of crystal into reactions between multicharge centers in semiconductors

      SEMICONDUCTORS
    26. Polignano, ML; Ghidini, G; Cazzaniga, F; Ceresara, L; Illuzzi, F; Padovani, B; Pellizzer, F
      Thin oxide reliability and gettering efficiency in advanced silicon substrates

      MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY
    27. Stephens, GJ
      Unraveling critical dynamics: The formation and evolution of textures - art. no. 085002

      PHYSICAL REVIEW D
    28. Davis, AC; Lilley, M
      Cosmological consequences of slow-moving bubbles in first-order phase transitions - art. no. 043502

      PHYSICAL REVIEW D
    29. Klein, A; Fritsche, J; Jaegermann, W; Schon, JH; Kloc, C; Bucher, E
      Fermi level-dependent defect formation at Cu(In,Ga) Se-2 interfaces

      APPLIED SURFACE SCIENCE
    30. Bermudez, VM
      Study of adsorption on radiation-damaged CaF2(111) surfaces

      APPLIED SURFACE SCIENCE
    31. Asai, K; Komachi, K; Kamei, K; Katahama, H
      Hydrogen plasma irradiation and postannealing effects on crystalline quality at vicinal Si (100) surface

      APPLIED SURFACE SCIENCE
    32. Skuja, L; Mizuguchi, M; Hosono, H; Kawazoe, H
      The nature of the 4.8 eV optical absorption band induced by vacuum-ultraviolet irradiation of glassy SiO2

      NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS
    33. Peeva, A; Kogler, R; Werner, P; de Mattos, AAD; Fichtner, PFP; Behar, M; Skorupa, W
      Evidence for interstitial-type defects in the R-p/2 region of MeV-self-ion-implanted silicon produced by standard ion milling procedure

      NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS
    34. Uenishi, K; Zhai, Y; North, TH; Bendzsak, GJ
      Spiral defect formation in friction welded aluminum

      WELDING JOURNAL
    35. Onischuk, AA; Levykin, AI; Strunin, VP; Ushakova, MA; Samoilova, RI; Sabelfeld, KK; Panfilov, VN
      Aerosol formation under heterogeneous/homogeneous thermal decomposition ofsilane: Experiment and numerical modeling

      JOURNAL OF AEROSOL SCIENCE
    36. Nitta, N; Taniwaki, M; Suzuki, T; Hayashi, Y; Satoh, Y; Yoshiie, T
      Anomalous defect structure formed on GaSb surface by low temperature Sn ion-implantation and its formation mechanism

      JOURNAL OF THE JAPAN INSTITUTE OF METALS
    37. Rivers, RJ
      Fluctuations and phase transition dynamics

      INTERNATIONAL JOURNAL OF THEORETICAL PHYSICS
    38. Griffiths, TR; Dixon, J
      Electron irradiation of single crystal thorium dioxide and electron transfer reactions

      INORGANICA CHIMICA ACTA
    39. Hara, T; Yoshida, T; Tanabe, T; Ii, T
      Hydrogen effect on damage structure of Si(100) surface studied by in situ Raman spectroscopy

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
    40. Fu, CR; Chen, LF; Song, KS
      Decay of the self-trapped exciton near the (001) surface in NaBr and KBr

      JOURNAL OF PHYSICS-CONDENSED MATTER
    41. Feng, T; Al-Sheikhly, M; Christou, A
      Defect formation in SiGe/Si structures grown on GaAs by CVD techniques utilizing a Si : H template layer

      MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY
    42. Krispin, P; Asghar, M; Kostial, H; Hey, R
      Deep-level defects near the surface of Be-doped GaAs grown by molecular beam epitaxy

      PHYSICA B
    43. Ozkan, CS; Nix, WD; Gao, HJ
      Stress-driven surface evolution in heteroepitaxial thin films: Anisotropy of the two-dimensional roughening mode

      JOURNAL OF MATERIALS RESEARCH
    44. Kaiser, U; Brown, PD; Khodos, I; Humphreys, CJ; Schenk, HPD; Richter, W
      The effect of growth condition on the structure of 2H-AIN films deposited on Si(111) by plasma-assisted molecular beam epitaxy

      JOURNAL OF MATERIALS RESEARCH
    45. Brown, RA; Kononchuk, O; Rozgonyi, GA
      Simulation of metallic impurity gettering in silicon by MeV ion implantation

      NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS
    46. Wendler, E; Breeger, B; Schubert, C; Wesch, W
      Comparative study of damage production in ion implanted III-V-compounds attemperatures from 20 to 420 K

      NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS
    47. Carmi, R; Polturak, E
      Search for spontaneous nucleation of magnetic flux during rapid cooling ofYBa2Cu3O7-delta films through T-c

      PHYSICAL REVIEW B-CONDENSED MATTER
    48. Obayashi, Y; Shintani, K
      Anisotropic stability analysis of surface undulations of strained lattice-mismatched layers

      THIN SOLID FILMS
    49. Aranson, IS; Kopnin, NB; Vinokur, VM
      Nucleation of vortices by rapid thermal quench

      PHYSICAL REVIEW LETTERS
    50. Lounasmaa, OV; Thuneberg, E
      Vortices in rotating superfluid He-3

      PROCEEDINGS OF THE NATIONAL ACADEMY OF SCIENCES OF THE UNITED STATES OF AMERICA
    51. Jin-Phillipp, NY; Phillipp, F
      Defect formation in self-assembling quantum dots of InGaAs on GaAs: a casestudy of direct measurements of local strain from HREM

      JOURNAL OF MICROSCOPY-OXFORD
    52. Jager, C; Jager, W; Popping, J; Bosker, G; Stolwijk, NA
      Formation of metal precipitates and voids by zinc diffusion in GaP

      JOURNAL OF ELECTRON MICROSCOPY
    53. Bakin, AS; Dorozhkin, SI; Lebedev, AO; Kirillov, BA; Ivanov, AA; Tairov, YM
      Stress and misoriented area formation under large silicon carbide boule growth

      JOURNAL OF CRYSTAL GROWTH
    54. Uematsu, M
      Simulation of high-concentration boron diffusion in silicon during post-implantation annealing

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
    55. SAVCHENKO EV; OGURTSOV AN; GRIGORASHCHENKO ON
      LATTICE REARRANGEMENT INDUCED BY EXCITONS IN CRYOCRYSTALS

      Physics of the solid state
    56. KONONETS YF; VELIGURA LI; OSTROUKHOVA OA
      EFFECT OF ULTRAVIOLET-IRRADIATION ON THE LUMINESCENCE AND OPTICAL-PROPERTIES OF ZNS-MN FILMS

      Semiconductors
    57. Itoh, N
      Material modification by electronic excitation

      RADIATION EFFECTS AND DEFECTS IN SOLIDS
    58. ONISCHUK AA; SAMOILOVA RI; STRUNIN VP; CHESNOKOV EN; MUSIN RN; BASHUROVA VS; MARYASOV AG; PANFILOV VN
      EPR INVESTIGATION OF A-SI-H AEROSOL-PARTICLES FORMED UNDER SILANE THERMAL-DECOMPOSITION

      Applied magnetic resonance
    59. NISHII J
      PERMANENT INDEX CHANGES IN GE-SIO2 GLASSES BY EXCIMER-LASER IRRADIATION

      Materials science & engineering. B, Solid-state materials for advanced technology
    60. Achucarro, A; Borrill, J; Liddle, AR
      On the formation of non-topological string networks

      PHYSICA B
    61. KOROTKOV VN; ROZENBERG BA
      EXPERIMENTAL AND THEORETICAL MODELING OF SHRINKAGE DAMAGE FORMATION IN FIBER COMPOSITES

      Mechanics of composite materials
    62. REIMANN CT; ANDERSSON S; BRUHWILER P; MARTENSSON N; OLSSON L; ERLANDSSON R; HENKEL M; URBASSEK HM
      GRAPHITE SURFACE-TOPOGRAPHY INDUCED BY TA CLUSTER-IMPACT AND OXIDATIVE ETCHING

      Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms
    63. ITOH N
      SUBTHRESHOLD RADIATION-INDUCED PROCESSES IN THE BULK AND ON SURFACES AND INTERFACES OF SOLIDS

      Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms
    64. AIZAWA T; IWAI T; KIHARA J
      GRANULAR MODELING APPROACH TO ELECTRO-PACKAGING MATERIALS

      Mechanics of materials
    65. HAUGSRUD R; NORBY T
      DETERMINATION OF THERMODYNAMICS AND KINETICS OF POINT-DEFECTS IN NIO USING THE ROSENBURG METHOD

      Solid state ionics
    66. JARRENDAHL K; SMITH SA; ZHELEVA T; KERN RS; DAVIS RF
      GROWTH OF HIGHLY (0001)-ORIENTED ALUMINUM NITRIDE THIN-FILMS WITH SMOOTH SURFACES ON SILICON-CARBIDE BY GAS-SOURCE MOLECULAR-BEAM EPITAXY

      Vacuum
    67. AKAZAWA H; TAKAHASHI J
      HIGH-PERFORMANCE BEAMLINE FOR VACUUM-ULTRAVIOLET-EXCITED MATERIAL PROCESSING

      Review of scientific instruments
    68. KARLITSCHEK P; HILLRICHS G; KLEIN KF
      INFLUENCE OF HYDROGEN ON THE COLOR-CENTER FORMATION IN OPTICAL FIBERSINDUCED BY PULSED UV-LASER RADIATION - PART 1 - ALL SILICA FIBERS WITH HIGH-OH UNDOPED CORE

      Optics communications
    69. KARLITSCHEK P; HILLRICHS G; KLEIN KF
      INFLUENCE OF HYDROGEN ON THE COLOR-CENTER FORMATION IN OPTICAL FIBERSINDUCED BY PULSED UV-LASER RADIATION - PART 2 - ALL-SILICA FIBERS WITH LOW-OH UNDOPED CORE

      Optics communications
    70. MAEDA K; UMEZU I
      DEFECT FORMATION MECHANISM DURING PLASMA-ENHANCED CHEMICAL-VAPOR-DEPOSITION OF UNDOPED A-SI-H

      Journal of non-crystalline solids
    71. ROBERTSON J; CHEN CW; POWELL MJ; DEANE SC
      LOCAL HYDROGEN REACTIONS OF H-2-ASTERISK IN A-SI-H

      Journal of non-crystalline solids
    72. MEAUDRE M; MEAUDRE R
      KINETICS OF DEFECT FORMATION BY ILLUMINATION AT TEMPERATURE HIGHER THAN 200-DEGREES-C IN HYDROGENATED AMORPHOUS-SILICON

      Journal of non-crystalline solids
    73. PIECHOTKA M; KALDIS E; WETZEL G; FLISCH A
      KINETICS OF PHYSICAL VAPOR TRANSPORT AT LOW-PRESSURE UNDER MICROGRAVITY CONDITIONS - II - RESULTS OF THE DCMF SPACE EXPERIMENT

      Journal of crystal growth
    74. HERMANN S; MAHNKE HE; SPELLMEYER B; WIENECKE M; REINHOLD B; YANKOV RA; GUMLICH HE
      PD-DEFECT-COMPLEXES IN ZNTE AND CDTE AND INTERACTION WITH GROUP-V-ELEMENTS

      Journal of crystal growth
    75. RAMALINGAM S; MAROUDAS D; AYDIL ES
      INTERACTIONS OF SIH RADICALS WITH SILICON SURFACES - AN ATOMIC-SCALE SIMULATION STUDY

      Journal of applied physics
    76. OBAYASHI Y; SHINTANI K
      DIRECTIONAL DEPENDENCE OF SURFACE MORPHOLOGICAL STABILITY OF HETEROEPITAXIAL LAYERS

      Journal of applied physics
    77. UEMATSU M
      IMPLANTATION SPECIES DEPENDENCE OF TRANSIENT ENHANCED DIFFUSION IN SILICON

      Journal of applied physics
    78. GOLIKOVA OA; KUZNETSOV AN; KUDOYAROVA VK; KAZANIN MM
      CHARACTERISTIC STRUCTURAL FEATURES OF AMORPHOUS HYDRATED SILICON FILMS DEPOSITED BY DIRECT-CURRENT DECOMPOSITION OF SILANE IN A MAGNETIC-FIELD

      Semiconductors
    79. WOLFF J; FRANZ M; BROSKA A; KOHLER B; HEHENKAMP T
      DEFECT TYPES AND DEFECT PROPERTIES IN FEAL ALLOYS

      Materials science & engineering. A, Structural materials: properties, microstructure and processing
    80. KOROTKOV VN
      MODELING OF THE FLAWS FORMATION IN THE CO URSE OF QUASI-ISOCHORIC CURE OF RUBBER-LIKE POLYMERS

      Vysokomolekularnye soedinenia. Seria A
    81. ISHIOKA K; NAKAMURA KG; KITAJIMA M
      RAMAN MEASUREMENTS ON GE UNDER IRRADIATION OF 5 KEV HE+

      Journal of materials science letters
    82. PONS M; ANIKIN M; DEDULLE JM; MADAR R; CHOUROU K; BLANQUET E; BERNARD C
      MACROSCOPIC MODELING OF SILICON-CARBIDE SUBLIMATION - TOWARD A MICROSCOPIC MODELING OF DEFECT FORMATION

      Surface & coatings technology
    83. KUZOVKOV VN; KOTOMIN EA
      THEORY OF DIFFUSION-CONTROLLED COLLOID FORMATION IN IRRADIATED SOLIDS

      Solid state ionics
    84. WOLFF J; FRANZ M; HEHENKAMP T
      DEFECT ANALYSIS WITH POSITRON-ANNIHILATION - APPLICATIONS TO FE ALUMINIDES

      Mikrochimica acta
    85. OKINO T; SHIMOSAKI T; TAKAUE R
      SELF-INTERSTITIALS IN SILICON

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
    86. GOROVAYA TA; KOROTKOV VN
      QUICK CURE OF THERMOSETTING COMPOSITES

      Composites. Part A, Applied science and manufacturing
    87. KOTOMIN EA; KUZOVKOV VN
      MICROSCOPIC THEORY OF COLLOID FORMATION IN SOLIDS UNDER IRRADIATION

      Materials science & engineering. B, Solid-state materials for advanced technology
    88. SPRINGHOLZ G; BAUER G
      STUDY OF MISFIT-DISLOCATION FORMATION IN STRAINED-LAYER HETEROEPITAXYUSING ULTRAHIGH-VACUUM SCANNING-TUNNELING-MICROSCOPY

      Materials science & engineering. B, Solid-state materials for advanced technology
    89. MIYAZAKI T; UDA T; TERAKURA K
      STRUCTURE MODELS OF THE C-TYPE DEFECT ON SI(001)

      Materials science & engineering. B, Solid-state materials for advanced technology
    90. MARSDEN K; KANDA T; OKUI M; HOURAI M; SHIGEMATSU T
      DETERMINATION OF THE CRITERIA FOR NUCLEATION OF RING-OSF FROM SMALL AS-GROWN OXYGEN PRECIPITATES IN CZ-SI CRYSTALS

      Materials science & engineering. B, Solid-state materials for advanced technology
    91. NAKAMURA K; SAISHUOJI T; KUBOTA T; TANIMURA T
      SIMULATION OF OXYGEN PRECIPITATION IN CZ-SI CRYSTAL DURING THE PULLING PROCESS

      Materials science & engineering. B, Solid-state materials for advanced technology
    92. MISIUK A; SURMA B; HARTWIG J
      STRESS-INDUCED OXYGEN PRECIPITATION IN CZ-SI

      Materials science & engineering. B, Solid-state materials for advanced technology
    93. BARBOT JF; BLANCHARD C; NTSOENZOK E; VERNOIS J
      DEFECT LEVELS IN N-SILICON AFTER HIGH-ENERGY AND HIGH-DOSE IMPLANTATION OF PROTON

      Materials science & engineering. B, Solid-state materials for advanced technology
    94. RASMUSSEN FB; OBERG S; JONES R; EWELS C; GOSS J; MIRO J; DEAK P
      THE NITROGEN-PAIR OXYGEN DEFECT IN SILICON

      Materials science & engineering. B, Solid-state materials for advanced technology
    95. TONINI R; MONELLI A; CORNI F; FRABBONI S; OTTAVIANI G; QUEIROLO G
      SILICON INTERSTITIALS GENERATION DURING THE EXPOSURE OF SILICON TO HYDROGEN PLASMA

      Materials science & engineering. B, Solid-state materials for advanced technology
    96. NAM CW; TANABE A; ASHOK S
      THERMAL ANNEAL ACTIVATION OF DEFECTS IN HYDROGEN PLASMA-TREATED SILICON

      Materials science & engineering. B, Solid-state materials for advanced technology
    97. KOROTKOV VN; CHEKANOV YA; SMIRNOV YN; ZENKOV ID
      SHRINKAGE STRESSES IN THE COURSE OF ISOCH ORIC CURING

      Vysokomolekularnye soedinenia. Seria A
    98. AKAZAWA H
      PHOTOEPITAXY OF SI AND GE BY SYNCHROTRON-RADIATION

      Applied surface science
    99. ITOH N
      SELF-TRAPPED EXCITON MODEL OF HEAVY-ION TRACT REGISTRATION

      Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms
    100. AKAZAWA H
      RADIATION EFFECTS IN VACUUM-ULTRAVIOLET-IRRADIATED SINX-H FILMS

      Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms


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Documento generato il 25/10/20 alle ore 06:37:04