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La ricerca find articoli where soggetti phrase all words 'DANGLING BONDS' sort by level,fasc_key/DESCEND, pagina_ini_num/ASCEND ha restituito 98 riferimenti
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    1. Fritzsche, H
      Development in understanding and controlling the Staebler-Wronski effect in a-Si : H

      ANNUAL REVIEW OF MATERIALS RESEARCH
    2. Kuznetsov, SV
      Numerical calculation of the temperature dependences of photoconductivity in the p-type a-Si : H

      SEMICONDUCTORS
    3. Shimizu, T; Sugiyama, H; Kumeda, M
      A large discrepancy between CPM and ESR defect densities in light-soaked a-Si : H

      SOLAR ENERGY MATERIALS AND SOLAR CELLS
    4. Kruger, T; Sax, AF
      Distorted silicon hydrides - A comparative study with various density functionals

      JOURNAL OF COMPUTATIONAL CHEMISTRY
    5. Kruger, T; Sax, AF
      Microstructure of local defects in amorphous Si : H: A quantum chemical study - art. no. 195201

      PHYSICAL REVIEW B
    6. Fedders, PA
      Energetics of bonded hydrogen for realistic a-Si : H supercells - art. no.165206

      PHYSICAL REVIEW B
    7. Grozdanic, D; Milat, O; Rakvin, B; Pivac, B; Slaoui, A; Monna, R
      Grain boundary defects in RTCVD polycrystalline silicon for solar cells

      VACUUM
    8. Keshmiri, SH; Rokn-Abadi, MR
      Enhancement of drift mobility of zinc oxide transparent-conducting films by a hydrogenation process

      THIN SOLID FILMS
    9. Ho, WY; Surya, C
      Study of light-induced annealing effects in a-Si : H thin films

      MICROELECTRONICS RELIABILITY
    10. Hasegawa, S; Sakamori, S; Futatsudera, M; Inokuma, T; Kurata, Y
      Structure of defects in silicon oxynitride films

      JOURNAL OF APPLIED PHYSICS
    11. He, LN; Hasegawa, S
      Thickness dependence of properties of plasma-deposited amorphous SiO2 films

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
    12. Shimizu, T; Maehara, T; Mitani, M; Kumeda, M
      Partial recovery of photodegradation at room temperature in hydrogenated amorphous silicon

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
    13. Agarwal, P; Agarwal, SC
      Thermal equilibrium, the Staebler-Wronski effect and potential fluctuations in lithium-doped hydrogenated amorphous silicon

      PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICSELECTRONIC OPTICAL AND MAGNETIC PROPERTIES
    14. Gaspari, F; Kosteski, T; Zukotynski, S; Kherani, NP; Shmayda, WT
      Time evolution of the density of states of tritiated hydrogenated amorphous silicon

      PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICSELECTRONIC OPTICAL AND MAGNETIC PROPERTIES
    15. Stesmans, A
      Dissociation kinetics of hydrogen-passivated P-b defects at the (111)Si/SiO2 interface

      PHYSICAL REVIEW B
    16. Rydberg, M; Smith, U; Sjodin, H
      Effect of post-nitride-passivation processing on the long-term stability of polysilicon integrated circuit resistors

      JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B
    17. Luo, TY; Laughery, M; Brown, GA; Al-Shareef, HN; Watt, VHC; Karamcheti, A; Jackson, MD; Huff, HR
      Effect of H-2 content on reliability of ultrathin in-situ steam generated (ISSG) SiO2

      IEEE ELECTRON DEVICE LETTERS
    18. Van de Walle, CG; Tuttle, BR
      Microscopic theory of hydrogen in silicon devices

      IEEE TRANSACTIONS ON ELECTRON DEVICES
    19. Gardos, MN; Gabelich, SA
      Atmospheric effects of friction, friction noise and wear with silicon and diamond. Part I. Test methodology

      TRIBOLOGY LETTERS
    20. Gardos, MN; Gabelich, SA
      Atmospheric effects of friction, friction noise and wear with silicon and diamond. Part II. SEM tribometry of silicon in vacuum and hydrogen

      TRIBOLOGY LETTERS
    21. Gardos, MN; Gabelich, SA
      Atmospheric effects of friction, friction noise and wear with silicon and diamond. Part III. SEM tribometry of polycrystalline diamond in vacuum and hydrogen

      TRIBOLOGY LETTERS
    22. Senda, M; Yoshida, N; Shimakawa, K
      Kinetics of photoinduced defect creation in amorphous semiconductors: analogy to a logistic equation in a biological system

      PHILOSOPHICAL MAGAZINE LETTERS
    23. Konyashin, I; Khvostov, V; Babaev, V; Guseva, M; Bill, J; Aldinger, F
      The influence of excited hydrogen species on the surface state of sp(2)-hybridized boron nitride

      DIAMOND AND RELATED MATERIALS
    24. Fornari, M; Peressi, M; De Gironcoli, S; Baldereschi, A
      Floating bonds and gap states in a-Si and a-Si : H from first principles calculations

      EUROPHYSICS LETTERS
    25. Gardos, MN
      Tribological fundamentals of polycrystalline diamond films

      SURFACE & COATINGS TECHNOLOGY
    26. Tuttle, B
      Hydrogen and P-b defects at the (111)Si-SiO2 interface: An ab initio cluster study

      PHYSICAL REVIEW B-CONDENSED MATTER
    27. Schmidt, JA; Arce, RD; Koropecki, RR; Buitrago, RH
      Light-induced creation of metastable defects in hydrogenated amorphous silicon studied by computer simulations of constant photocurrent measurements

      PHYSICAL REVIEW B-CONDENSED MATTER
    28. Nickel, NH
      Hydrogen in polycrystalline silicon

      HYDROGEN IN SEMICONDUCTORS II
    29. Meaudre, M; Meaudre, R; Butte, R; Vignoli, S; Longeaud, C; Kleider, JP; Cabarrocas, PRI
      Midgap density of states in hydrogenated polymorphous silicon

      JOURNAL OF APPLIED PHYSICS
    30. Sakikawa, N; Tamao, M; Miyazaki, S; Hirose, M
      Structural inhomogeneity in hydrogenated amorphous silicon in relation to photoelectric properties and defect density

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
    31. Fedders, PA; Drabold, DA; Nakhmanson, S
      Theoretical study on the nature of band-tail states in amorphous Si

      PHYSICAL REVIEW B-CONDENSED MATTER
    32. LIU PT; CHANG TC; SZE SM; PAN FM; MEI YJ; WU WF; TSAI MS; DAI BT; CHANG CY; SHIH FY; HUANG HD
      THE EFFECTS OF PLASMA TREATMENT FOR LOW DIELECTRIC-CONSTANT HYDROGEN SILSESQUIOXANE (HSQ)

      Thin solid films
    33. SUTO S; SAKAMOTO K; WAKITA T; HARADA M; KASUYA A
      INTERACTION OF C-60 WITH SILICON DANGLING BONDS ON THE SI(111)-(7X7) SURFACE

      Surface science
    34. Akiyama, T; Oshiyama, A; Sugino, O
      Magic numbers of multivacancy in crystalline Si: Tight-binding studies forthe stability of the multivacancy

      JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN
    35. CARTIER E
      CHARACTERIZATION OF THE HOT-ELECTRON-INDUCED DEGRADATION IN THIN SIO2GATE OXIDES

      Microelectronics and reliability
    36. BRUGGEMANN R; BAUER GH
      PHOTOCONDUCTIVE PROPERTIES OF HYDROGENATED AMORPHOUS-SILICON IN THE LIGHT OF THE POSITIVE DANGLING BOND AS THE MAIN RECOMBINATION CENTER - CONSEQUENCES FROM THE DEFECT POOL MODEL

      Journal of non-crystalline solids
    37. NADAZDY V; DURNY R; THURZO I; PINCIK E
      NEW EXPERIMENTAL FACTS ON THE STAEBLER-WRONSKI EFFECT

      Journal of non-crystalline solids
    38. YAMASAKI S; UMEDA T; ISOYA J; ZHOU JH; TANAKA K
      MICROSCOPIC NATURE OF LOCALIZED STATES IN A-SI-H AND THEIR ROLE IN METASTABILITY

      Journal of non-crystalline solids
    39. MORIGAKI K; HIKITA H; YAMAGUCHI M; FUJITA Y
      THE STRUCTURE OF DANGLING BONDS HAVING HYDROGEN AT A NEARBY SITE IN A-SI-H

      Journal of non-crystalline solids
    40. SAKIKAWA N; TAMAO M; MIYAZAKI S; HIROSE M
      CORRELATION BETWEEN LIGHT-INDUCED DEGRADATION AND STRUCTURAL INHOMOGENEITIES IN HYDROGENATED AMORPHOUS-SILICON PREPARED UNDER HIGH-RATE DEPOSITION CONDITIONS

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
    41. Takeda, K; Hikita, H; Kimura, Y; Yokomichi, H; Morigaki, K
      Electron spin resonance study of light-induced annealing of dangling bondsin glow discharge hydrogenated amorphous silicon: Deconvolution of electron spin resonance spectra

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
    42. STATHIS JH
      CREATION OF P-B INTERFACE DEFECTS IN THERMAL SI SIO2 THROUGH ANNEALING - COMMENT/

      Journal of physics. Condensed matter
    43. SHIMIZU T; KUMEDA M; NISHINO T
      THERMAL EQUILIBRATION AND PHOTOCREATION OF NEUTRAL DANGLING BONDS IN A-SI-H CAUSED BY FLOATING BONDS

      Solar energy materials and solar cells
    44. GONG XY; YAMAGUCHI T; KAN H; MAKINO T; OHSHIMO K; AOYAMA M; KUMAGAWA M; ROWELL NL; RINFRET R
      SULFUR PASSIVATION OF INAS(SB)

      Applied surface science
    45. YAMAGUCHI M; MORIGAKI K
      INTERFACE DEFECTS AND THEIR ROLES IN LIGHT-INDUCED PHENOMENA IN N-SI-H A-SI1-XNX-H MULTILAYERS/

      Physical review. B, Condensed matter
    46. SCHMIDT JA; ARCE R; BUITRAGO RH; KOROPECKI RR
      LIGHT-INDUCED DEFECTS IN HYDROGENATED AMORPHOUS-SILICON STUDIED BY THE CONSTANT-PHOTOCURRENT METHOD

      Physical review. B, Condensed matter
    47. JENNISON DR; SULLIVAN JP; SCHULTZ PA; SEARS MP; STECHEL EB
      DIET IN THE BULK - EVIDENCE FOR HOT-ELECTRON CLEAVAGE OF SI-H BONDS IN SIO2-FILMS

      Surface science
    48. HIKITA H; TAKEDA K; KIMURA Y; YOKOMICHI H; MORIGAKI K
      DECONVOLUTION OF ESR-SPECTRA AND THEIR LIGHT-INDUCED EFFECT IN A-SI-H

      Journal of the Physical Society of Japan
    49. HERREMANS H; GREVENDONK W
      COMPARISON OF STEADY-STATE OPTICAL MODULATION SPECTRA OF B2H6-DOPED AND B(CH3)(3)-DOPED A-SI(-C)-H FILMS

      Journal of non-crystalline solids
    50. TAKEDA K; HIKITA H; KIMURA Y; YOKOMICHI H; YAMAGUCHI M; MORIGAKI K
      LIGHT-INDUCED ANNEALING OF DANGLING BONDS IN A-SI-H

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
    51. HELLMAN O
      TOPICS IN SOLID-PHASE EPITAXY - STRAIN, STRUCTURE AND GEOMETRY

      Materials science & engineering. R, Reports
    52. VONBARDELEBEN HJ; SCHOISSWOHL M; CANTIN JL
      ELECTRON-PARAMAGNETIC-RESONANCE STUDY OF DEFECTS IN OXIDIZED AND NITRIDED POROUS SI AND SI1-XGEX

      Colloids and surfaces. A, Physicochemical and engineering aspects
    53. LIN SY
      DEEP DEFECT STATES IN A-SI(H,C) ALLOYS

      Materials chemistry and physics
    54. CLARE BW; CORNISH JCL; HEFTER GT; JENNINGS PJ; LUND CP; SANTJOJO DJ; TALUKDER MOG
      STUDIES OF PHOTODEGRADATION IN HYDROGENATED AMORPHOUS-SILICON

      Thin solid films
    55. WYRSCH N; BECK N; HOF C; GOERLITZER M; SHAH A
      CORRELATION BETWEEN TRANSPORT-PROPERTIES OF A-SI-H LAYERS AND CELL PERFORMANCES INCORPORATING THESE LAYERS

      Journal of non-crystalline solids
    56. MAIN C; DICK F; REYNOLDS S; GAO W; GIBSON RAG
      SUBLINEAR PHOTOCONDUCTIVITY IN N-TYPE A-SI-H - ANALYSIS AND COMPUTER MODELING

      Journal of non-crystalline solids
    57. YAMASAKI S; LEE J; UMEDA T; ISOYA J; TANAKA K
      SPATIAL-DISTRIBUTION OF PHOSPHORUS ATOMS SURROUNDING SPIN CENTERS OF P-DOPED HYDROGENATED AMORPHOUS-SILICON ELUCIDATED BY PULSED ESR

      Journal of non-crystalline solids
    58. VIGNOLI S; MEAUDRE R; MEAUDRE M; CABARROCAS PR; GODET C; MORIN P
      STABILITY VERSUS STRUCTURE IN GLOW-DISCHARGE HYDROGENATED AMORPHOUS-SILICON OBTAINED FROM A WIDE-RANGE OF DEPOSITION CONDITIONS

      Journal of non-crystalline solids
    59. HASEGAWA S; IKEDA M; INOKUMA T; KURATA Y
      BONDING STRUCTURE AND CHARACTERISTICS OF DEFECTS OF NEAR-STOICHIOMETRIC SILICON-NITRIDE FILMS

      Journal of applied physics
    60. KOUNAVIS P; MATARAS D; RAPAKOULIAS D
      EFFECTIVE CAPTURE RATES OF CARRIERS IN AMORPHOUS HYDROGENATED SILICON

      Journal of applied physics
    61. BECK N; WYRSCH N; HOF C; SHAH A
      MOBILITY LIFETIME PRODUCT - A TOOL FOR CORRELATING A-SI-H FILM PROPERTIES AND SOLAR-CELL PERFORMANCES

      Journal of applied physics
    62. HE LN; INOKUMA T; HASEGAWA S
      PROPERTIES OF STOICHIOMETRIC SILICON OXYNITRIDE FILMS

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
    63. SHIMIZU T; KUMEDA M
      CONTRIBUTION OF FLOATING BONDS TO PHOTOCREATION OF DEFECTS IN A SI-H

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS
    64. DURNY R; TAKEDA M; KUMEDA M; SHIMIZU T
      INFLUENCE OF SUBGAP ILLUMINATION ON LIGHT-INDUCED ESR IN UNDOPED A-SI-H

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS
    65. TRAN MQ
      ON THERMAL QUENCHING OF THE PHOTOCONDUCTIVITY IN HYDROGENATED AMORPHOUS-SILICON

      Philosophical magazine. B. Physics of condensed matter. Structural, electronic, optical and magnetic properties
    66. AKKAYA A; AKTAS G
      THE EFFECT OF LIGHT-SOAKING ON THE DC CONDUCTIVITY OF A-SI-H

      Materials letters
    67. WANG F; SCHWARZ R
      COMPREHENSIVE NUMERICAL-SIMULATION OF DEFECT DENSITY AND TEMPERATURE-DEPENDENT TRANSPORT-PROPERTIES IN HYDROGENATED AMORPHOUS-SILICON

      Physical review. B, Condensed matter
    68. POPESCU MA
      THE MEDIUM-RANGE STRUCTURE OF AMORPHOUS HYDROGENATED SILICON

      Journal of non-crystalline solids
    69. MORIGAKI K; HIKITA H; KONDO M
      SELF-TRAPPING OF HOLES AND RELATED PHENOMENA IN A-SI-H

      Journal of non-crystalline solids
    70. FRITZSCHE H
      THE STRUCTURE OF LIGHT-INDUCED METASTABLE DEFECTS IN A-SI-H

      Journal of non-crystalline solids
    71. FEFER E; SHAPIRA Y; BALBERG I
      DIRECT DETERMINATION OF THE BAND-GAP STATES IN HYDROGENATED AMORPHOUS-SILICON USING SURFACE PHOTOVOLTAGE SPECTROSCOPY

      Applied physics letters
    72. ZHOU JH; KUMEDA M; SHIMIZU T
      LIGHT-INDUCED ESR IN VARIOUSLY TREATED HYDROGENATED AMORPHOUS-SILICON

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
    73. ZHANG J; KUMEDA M; SHIMIZU T
      DISTRIBUTIONS OF THERMAL-ANNEALING ACTIVATION-ENERGIES FOR LIGHT-INDUCED SPINS IN FAST AND SLOW PROCESSES IN A-SI1-XNX-H ALLOYS

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
    74. WANG H; LIN XY; LIN KX; ZHU MF; ZHENG DJ
      CALCULATION OF ELECTRONIC POTENTIAL-ENERGY DISTRIBUTIONS AND PHOTOCONDUCTIVITY IN HYDROGENATED AMORPHOUS-SILICON HYDROGENATED AMORPHOUS-SILICON NITRIDE SUPERLATTICES

      Philosophical magazine. B. Physics of condensed matter. Structural, electronic, optical and magnetic properties
    75. MITTIGA A; FIORINI P; FORNARINI L; PETRACCA M; GRILLO G
      PHOTOCONDUCTIVITY SPECTROSCOPY OF HYDROGENATED AMORPHOUS-SILICON

      Philosophical magazine. B. Physics of condensed matter. Structural, electronic, optical and magnetic properties
    76. GANGULY G; MATSUDA A
      GROWTH-PROCESS OF A-SI-H

      Optoelectronics
    77. SHIMIZU T
      FUNDAMENTAL PROPERTIES OF A-SI-H AND RELATED ALLOY-FILMS

      Optoelectronics
    78. TAKEDA K; SHIRAISHI K; FUJIKI M; KONDO M; MORIGAKI K
      PHOTOCREATED METASTABLE STATES IN POLYSILANES

      Physical review. B, Condensed matter
    79. LEE IH; CHANG KJ
      ATOMIC-STRUCTURE AND ELECTRONIC-STRUCTURE OF AMORPHOUS SI FROM FIRST-PRINCIPLES MOLECULAR-DYNAMICS SIMULATIONS

      Physical review. B, Condensed matter
    80. HERREMANS H; GREVENDONK W
      STEADY-STATE OPTICAL MODULATION SPECTROSCOPY OF P-TYPE A-SI-H

      Physical review. B, Condensed matter
    81. SCHUMM G
      CHEMICAL-EQUILIBRIUM DESCRIPTION OF STABLE AND METASTABLE DEFECT STRUCTURES IN A-SI-H

      Physical review. B, Condensed matter
    82. LIN XY; WANG H; LIN KX; YU YP; FU SL
      LIGHT-INDUCED-CHANGES IN THE PHOTOCONDUCTIVITY OF RAPIDLY-DEPOSITED HYDROGENATED AMORPHOUS-SILICON FILMS

      Thin solid films
    83. BALBERG I
      THE 2 CARRIERS MOBILITY-LIFETIME PRODUCTS AND THEIR LIGHT-INTENSITY DEPENDENCIES IN HYDROGENATED AMORPHOUS-SILICON

      Journal of applied physics
    84. ZHANG JY; KUMEDA M; SHIMIZU T
      DECAY BEHAVIOR OF LIGHT-INDUCED ESR IN HYDROGENATED AMORPHOUS SILICON-NITROGEN ALLOYS

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
    85. OKEEFFE P; KOMURO S; KATO T; MORIKAWA T; AOYAGI Y
      RADICAL-BEAM-INDUCED SURFACE-REACTION PROCESSES OF POROUS SI

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
    86. ZHOU JH; OKAGAWA T; KUMEDA M; SHIMIZU T
      LIGHT-INDUCED-ESR STUDY OF UNDOPED AND N-DOPED HYDROGENATED AMORPHOUS-SILICON

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS
    87. KO HC; UCHIDA K; NAKATSUKA S
      EFFECT OF LIGHT IRRADIATION ON SULFIDE-TREATED GAAS WITH SIO2 DEPOSITION

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS
    88. BULLOT J; CORDIER P; GAUTHIER M
      PHOTOCONDUCTIVITY IN HYDROGENATED AMORPHOUS-SILICON .1. THERMAL EMISSION AND HOPPING OF TRAPPED CHARGES

      Philosophical magazine. B. Physics of condensed matter. Structural, electronic, optical and magnetic properties
    89. BALBERG I; LUBIANIKER Y
      EVIDENCE FOR THE DEFECT-POOL MODEL FROM INDUCED RECOMBINATION LEVEL SHIFTS IN UNDOPED A-SIH

      Physical review. B, Condensed matter
    90. KOCKA J; STUCHLIK J; STUTZMANN M; CHEN L; TAUC J
      MICROSCOPIC ORIGIN AND ENERGY-LEVELS OF THE STATES PRODUCED IN A-SI-HBY PHOSPHORUS DOPING

      Physical review. B, Condensed matter
    91. ALEJOARMENTA CA; VAZQUEZLOPEZ C; PEREZGONZALEZ A
      MODULATION OF THE REFLECTIVITY IN AMORPHOUS-SEMICONDUCTORS

      Solid state communications
    92. YAMASAKI S; ISOYA J
      PULSED-ESR STUDY OF LIGHT-INDUCED METASTABLE DEFECT IN A-SI-H

      Journal of non-crystalline solids
    93. SCHUMM G
      THE DEFECT-POOL MODEL AND CHARGED DEFECTS IN AMORPHOUS-SILICON

      Journal of non-crystalline solids
    94. HERREMANS H; JANSEN J; GREVENDONK W
      STEADY-STATE OPTICAL MODULATION SPECTROSCOPY OF B2H6-DOPED A-SI-H

      Journal of non-crystalline solids
    95. LIU JZ; LEWEN G; CONDE JP; CABARROCAS PR
      DUAL-BEAM PHOTOCURRENT SPECTRA IN UNDOPED A-SI-H - ANOMALOUS BAND, OPTICAL-TRANSITION ENERGY, AND CORRELATION-ENERGY

      Journal of non-crystalline solids
    96. LUBIANIKER Y; BALBERG I; WEISZ SZ; GOMEZ M
      THE DEPENDENCIES OF THE 2 CARRIER MOBILITY-LIFETIME PRODUCTS ON THE POSITION OF THE FERMI-LEVEL IN A-SI-H

      Journal of non-crystalline solids
    97. BANERJEE R; GHOSH S; CHATTOPADHYAY S; BANDYOPADHYAY AK; CHAUDHURI P; BATABYAL AK; BARUA AK
      HYDROGENATED AMORPHOUS-SILICON FILMS PREPARED AT HIGH SUBSTRATE-TEMPERATURE - PROPERTIES AND LIGHT-INDUCED DEGRADATION

      Journal of applied physics
    98. KUMEDA M; SUGIMOTO A; ZHANG JY; OZAWA Y; SHIMIZU T
      FAST AND SLOW PROCESSES IN LIGHT-INDUCED ELECTRON-SPIN-RESONANCE IN HYDROGENATED AMORPHOUS SI-N FILMS

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS


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Documento generato il 28/10/20 alle ore 19:18:05