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La ricerca find articoli where soggetti phrase all words 'CONTINUOUS-WAVE OPERATION' sort by level,fasc_key/DESCEND, pagina_ini_num/ASCEND ha restituito 138 riferimenti
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    1. Vurgaftman, I; Felix, CL; Bewley, WW; Stokes, DW; Bartolo, RE; Meyer, JR
      Mid-infrared 'W' lasers

      PHILOSOPHICAL TRANSACTIONS OF THE ROYAL SOCIETY OF LONDON SERIES A-MATHEMATICAL PHYSICAL AND ENGINEERING SCIENCES
    2. Flatte, ME; Olesberg, JT; Grein, CH
      Theoretical comparison of mid-wavelength infrared and long-wavelength infrared lasers

      PHILOSOPHICAL TRANSACTIONS OF THE ROYAL SOCIETY OF LONDON SERIES A-MATHEMATICAL PHYSICAL AND ENGINEERING SCIENCES
    3. Stradling, RA
      Semiconductor light sources for mid-infrared applications: concluding remarks

      PHILOSOPHICAL TRANSACTIONS OF THE ROYAL SOCIETY OF LONDON SERIES A-MATHEMATICAL PHYSICAL AND ENGINEERING SCIENCES
    4. Bradshaw, JL; Pham, JT; Yang, RQ; Bruno, JD; Wortman, DE
      Enhanced CW performance of the interband cascade laser using improved device fabrication

      IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS
    5. Karim, A; Piprek, J; Abraham, P; Lofgreen, D; Chiu, YJ; Bowers, JE
      1.55-mu m vertical-cavity laser arrays for wavelength-division multiplexing

      IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS
    6. Nakagawa, S; Hall, E; Almuneau, G; Kim, JK; Buell, DA; Kroemer, H; Coldren, LA
      1.55-mu m InP-lattice-matched VCSELs with AlGaAsSb-AlAsSb DBRs

      IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS
    7. Shimizu, H; Kumada, K; Uchiyama, S; Kasukawa, A
      High-performance CW 1.26-mu m GaInNAsSb-SQW ridge lasers

      IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS
    8. Miyajima, T; Tojyo, T; Asano, T; Yanashima, K; Kijima, S; Hino, T; Takeya, M; Uchida, S; Tomiya, S; Funato, K; Asatsuma, T; Kobayashi, T; Ikeda, M
      GaN-based blue laser diodes

      JOURNAL OF PHYSICS-CONDENSED MATTER
    9. Hatakoshi, G; Onomura, M; Ishikawa, M
      Optical, electrical and thermal analysis for GaN semiconductor lasers

      INTERNATIONAL JOURNAL OF NUMERICAL MODELLING-ELECTRONIC NETWORKS DEVICES AND FIELDS
    10. Egorov, AY; Zhukov, AE; Ustinov, VM
      1.3 mu m GaAs-based quantum well and quantum dot lasers: Comparative analysis

      JOURNAL OF ELECTRONIC MATERIALS
    11. Prevot, I; Vinter, B; Julien, FH; Fossard, F; Marcadet, X
      Experimental and theoretical investigation of interband and intersubband transitions in type-II InAs/AlSb superlattices - art. no. 195318

      PHYSICAL REVIEW B
    12. Gmachl, C; Capasso, F; Sivco, DL; Cho, AY
      Recent progress in quantum cascade lasers and applications

      REPORTS ON PROGRESS IN PHYSICS
    13. Feng, PX; Riley, JD; Leckey, RCG; Ley, L
      MBE growth of MgSe thin films on ZnSe/GaAs(001) substrates

      JOURNAL OF PHYSICS D-APPLIED PHYSICS
    14. Czyszanowski, T; Nakwaski, W
      How many quantum wells in nitride lasers?

      JOURNAL OF PHYSICS D-APPLIED PHYSICS
    15. Wilk, A; Fraisse, B; Christol, P; Boissier, G; Grech, P; El Gazouli, M; Rouillard, Y; Baranov, AN; Joullie, A
      MBE growth of InAs/InAsSb/InAlAsSb "W" quantum well laser diodes emitting near 3 mu m

      JOURNAL OF CRYSTAL GROWTH
    16. Laikhtman, B; Luryi, S; Belenky, G
      InAs/GaSb-based lateral current injection laser

      JOURNAL OF APPLIED PHYSICS
    17. Donovan, K; Harrison, P; Kelsall, RW
      Self-consistent solutions to the intersubband rate equations in quantum cascade lasers: Analysis of a GaAs/AlxGa1-xAs device

      JOURNAL OF APPLIED PHYSICS
    18. Ohiso, Y; Okamoto, H; Iga, R; Kishi, K; Tateno, K; Amano, C
      1.55-mu m buried-heterostructure VCSELs with InGaAsP/InP-GaAs/AlAs DBRs ona GaAs substrate

      IEEE JOURNAL OF QUANTUM ELECTRONICS
    19. Ukita, M; Ishibashi, A
      Universal discriminant for continuous-wave operation of laser diodes

      IEEE JOURNAL OF QUANTUM ELECTRONICS
    20. Maximov, MV; Asryan, LV; Shernyakov, YM; Tsatsul'nikov, AF; Kaiander, IN; Nikolaev, VV; Kovsh, AR; Mikhrin, SS; Ustinov, VM; Zhukov, AE; Alferov, ZI; Ledenstov, NN; Bimberg, D
      Gain and threshold characteristics of long wavelength lasers based on InAs/GaAs quantum dots formed by activated alloy phase separation

      IEEE JOURNAL OF QUANTUM ELECTRONICS
    21. Huang, H; Deppe, DG
      Rate equation model for nonequilibrium operating conditions in a self-organized quantum-dot laser

      IEEE JOURNAL OF QUANTUM ELECTRONICS
    22. Yang, RQ; Bradshaw, JL; Bruno, JD; Pham, JT; Wortman, DE
      Power, efficiency, and thermal characteristics of type-II interband cascade lasers

      IEEE JOURNAL OF QUANTUM ELECTRONICS
    23. Salomonsson, F; Asplund, C; Sundgren, P; Plaine, G; Mogg, S; Hammar, M
      Low-threshold, high-temperature operation of 1.2 mu m InGaAs vertical cavity lasers

      ELECTRONICS LETTERS
    24. Akasaka, T; Ando, S; Nishida, T; Saito, H; Kobayashi, N
      Room-temperature lasing of InGaN multiquantum-well hexagonal microfacet lasers by current injection

      APPLIED PHYSICS LETTERS
    25. Chuo, CC; Lee, CM; Chyi, JI
      Interdiffusion of In and Ga in InGaN/GaN multiple quantum wells

      APPLIED PHYSICS LETTERS
    26. Chitica, N; Strassner, M
      Room-temperature operation of photopumped monolithic InP vertical-cavity laser with two air-gap Bragg reflectors

      APPLIED PHYSICS LETTERS
    27. Vurgaftman, I; Meyer, JR
      Photonic-crystal distributed-feedback lasers

      APPLIED PHYSICS LETTERS
    28. Tojyo, T; Asano, T; Takeya, M; Hino, T; Kijima, S; Goto, S; Uchida, S; Ikeda, M
      GaN-based high power blue-violet laser diodes

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
    29. Makino, S; Miyamoto, T; Kageyama, T; Ikenaga, Y; Arai, M; Koyama, F; Iga, K
      Composition dependence of thermal annealing effect on 1.3 mu m GaInNAs/GaAs quantum well lasers grown by chemical beam epitaxy

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS
    30. Akasaki, I; Kamiyama, S; Detchprohm, T; Takeuchi, T; Amano, H
      Growth of crack-free thick AlGaN layer and its application to GaN-based laser diode

      MRS INTERNET JOURNAL OF NITRIDE SEMICONDUCTOR RESEARCH
    31. Karim, A; Bjorlin, S; Piprek, J; Bowers, JE
      Long-wavelength vertical-cavity lasers and amplifiers

      IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS
    32. Ledentsov, NN; Grundmann, M; Heinrichsdorff, F; Bimberg, D; Ustinov, VM; Zhukov, AE; Maximov, MV; Alferov, ZI; Lott, JA
      Quantum-dot heterostructure lasers

      IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS
    33. Danilova, TN; Imenkov, AN; Sherstnev, VV; Yakovlev, YP
      InAsSb/InAsSbP double-heterostructure lasers emitting at 3-4 mu m: Part I

      SEMICONDUCTORS
    34. Fischer, M; Reinhardt, M; Forchel, A
      A monolithic GaInAsN vertical-cavity surface-emitting laser for the 1.3-mum regime

      IEEE PHOTONICS TECHNOLOGY LETTERS
    35. Civis, S; Imenkov, AN; Danilova, AP; Kolchanova, NM; Sherstnev, VV; Yakovlev, YP; Walters, AD
      Diode laser spectroscopy using two modes of an InAsSb/InAsSbP laser near 3.6 mu m

      APPLIED PHYSICS B-LASERS AND OPTICS
    36. Affolderbach, C; Nagel, A; Knappe, S; Jung, C; Wiedenmann, D; Wynands, R
      Nonlinear spectroscopy with a vertical-cavity surface-emitting laser (VCSEL)

      APPLIED PHYSICS B-LASERS AND OPTICS
    37. Zhukov, AE; Kovsh, AR; Ustinov, VM; Livshits, DA; Kop'ev, PS; Alferov, ZI; Ledentsov, NN; Bimberg, D
      3.5 W continuous wave operation from quantum dot laser

      MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY
    38. Kitatani, T; Kondow, M; Nakahara, K; Tanaka, T
      Recent progress in GaInNAs laser

      IEICE TRANSACTIONS ON ELECTRONICS
    39. Kuramata, A; Kubota, S; Soejima, R; Domen, K; Horino, K; Hacke, P; Tanahashi, T
      Continuous wave operation of InGaN laser diodes fabricated on SiC substrates

      IEICE TRANSACTIONS ON ELECTRONICS
    40. Kuramoto, M; Yamaguchi, AA; Usui, A; Mizuta, M
      InGaN MQW laser diodes grown on an n-GaN substrate with a backside n-contact

      IEICE TRANSACTIONS ON ELECTRONICS
    41. Sato, T; Iwaya, M; Isomura, K; Ukai, T; Kamiyama, S; Amano, H; Akasaki, I
      Theoretical analysis of optical transverse-mode control on GaN-based laserdiodes

      IEICE TRANSACTIONS ON ELECTRONICS
    42. Hasegawa, F; Minami, M; Suemasu, T
      One possibility of obtaining bulk GaN: Halide VPE growth at 1000 degrees Con GaAs (111) substrates

      IEICE TRANSACTIONS ON ELECTRONICS
    43. Maximov, MV; Ledentsov, NN; Ustinov, VM; Alferov, ZI; Bimberg, D
      GaAs-based 1.3 mu m InGaAs quantum dot lasers: A status report

      JOURNAL OF ELECTRONIC MATERIALS
    44. Takeuchi, T; Detchprohm, T; Iwaya, M; Hayashi, N; Isomura, K; Kimura, K; Yamaguchi, M; Yamaguchi, S; Wetzel, C; Amano, H; Akasaki, I; Kaneko, YW; Shioda, R; Watanabe, S; Hidaka, T; Yamaoka, Y; Kaneko, YS; Yamada, N
      Nitride-based laser diodes using thick n-AlGaN layers

      JOURNAL OF ELECTRONIC MATERIALS
    45. Ustinov, VM; Zhukov, AE
      GaAs-based long-wavelength lasers

      SEMICONDUCTOR SCIENCE AND TECHNOLOGY
    46. Ledentsov, NN; Maximov, MV; Bimberg, D; Maka, T; Torres, CMS; Kochnev, IV; Krestnikov, IL; Lantratov, VM; Cherkashin, NA; Musikhin, YM; Alferov, ZI
      1.3 mu m luminescence and gain from defect-free InGaAs-GaAs quantum dots grown by metal-organic chemical vapour deposition

      SEMICONDUCTOR SCIENCE AND TECHNOLOGY
    47. Mikhrin, SS; Zhukov, AE; Kovsh, AR; Maleev, NA; Ustinov, VM; Shernyakov, YM; Soshnikov, IP; Livshits, DA; Tarasov, IS; Bedarev, DA; Volovik, BV; Maximov, MV; Tsatsul'nikov, AF; Ledentsov, NN; Kop'ev, PS; Bimberg, D; Alferov, ZI
      0.94 mu m diode lasers based on Stranski-Krastanow and sub-monolayer quantum dots

      SEMICONDUCTOR SCIENCE AND TECHNOLOGY
    48. Hays, DC; Cho, H; Lee, JW; Devre, MW; Reelfs, BH; Johnson, D; Sasserath, JN; Meyer, LC; Toussaint, E; Ren, F; Abernathy, CR; Pearton, SJ
      High selectivity Inductively Coupled Plasma etching of GaAs over InGaP

      APPLIED SURFACE SCIENCE
    49. Streubel, K; Hammar, M; Salomonsson, F; Bentell, J; Mogg, S; Rapp, S; Jacquet, J; Boucart, J; Stark, C; Plais, A; Gaborit, F; Derouin, E; Bouche, N; Rudra, A; Syrbu, AV; Iakovlev, VP; Berseth, CA; Dehaese, O; Kapon, E; Moussa, H; Sagnes, I
      Novel technologies for 1.55-mu m vertical cavity lasers

      OPTICAL ENGINEERING
    50. Mackowiak, P; Nakwaski, W
      Impact of mismatch-related phenomena on a room-temperature operation of nitride VCSELs

      OPTICA APPLICATA
    51. Sargent, EH
      Semiconductor lasers for planar integrated optoelectronics

      SOLID-STATE ELECTRONICS
    52. Bour, DP; Kneissl, M; Van de Walle, CG; Northrup, J; Romano, LT; Teepe, M; Wood, R; Schmidt, T; Johnson, NM
      CW operation of InGaN MQW laser diodes

      PHYSICA STATUS SOLIDI A-APPLIED RESEARCH
    53. Mizuta, M
      CW operation of (In,Ga)N MQW laser diodes on FIELO-GaN substrates

      PHYSICA STATUS SOLIDI A-APPLIED RESEARCH
    54. Kneissl, M; Van de Walle, CG; Bour, DP; Romano, LT; Goddard, LL; Master, CP; Northrup, JE; Johnson, NM
      Performance and optical gain characteristic of InGaN MQW laser diodes

      JOURNAL OF LUMINESCENCE
    55. Asatsuma, T; Nakajima, H; Hashimoto, S; Yamaguchi, T; Yoshida, H; Tomiya, S; Asano, T; Hino, T; Ozawa, M; Miyajima, T; Kobayashi, T; Ikeda, M
      Properties of GaN-based laser diodes with a buried-ridge structure

      JOURNAL OF CRYSTAL GROWTH
    56. Tsuchiya, T; Ohnishi, M; Wakahara, A; Yoshida, A
      Initial stages of InN thin film growth onto MgAl2O4(111) and alpha-Al2O3(00 center dot 1) substrates

      JOURNAL OF CRYSTAL GROWTH
    57. Peters, S; Schmidtling, T; Trepk, T; Pohl, UW; Zettler, JT; Richter, W
      In situ monitoring of GaN metal-organic vapor phase epitaxy by spectroscopic ellipsometry

      JOURNAL OF APPLIED PHYSICS
    58. Bour, DP; Kneissl, M; Van de Walle, CG; Evans, GA; Romano, LT; Northrup, J; Teepe, M; Wood, R; Schmidt, T; Schoffberger, S; Johnson, NM
      Design and performance of asymmetric waveguide nitride laser diodes

      IEEE JOURNAL OF QUANTUM ELECTRONICS
    59. Chuo, CC; Lee, CM; Nee, TE; Chyi, JI
      Effects of thermal annealing on the luminescence and structural propertiesof high indium-content InGaN/GaN quantum wells

      APPLIED PHYSICS LETTERS
    60. Di Carlo, A; Della Sala, F; Lugli, P; Fiorentini, V; Bernardini, F
      Doping screening of polarization fields in nitride heterostructures

      APPLIED PHYSICS LETTERS
    61. Ortsiefer, M; Shau, R; Bohm, G; Kohler, F; Amann, MC
      Low-threshold index-guided 1.5 mu m long-wavelength vertical-cavity surface-emitting laser with high efficiency

      APPLIED PHYSICS LETTERS
    62. Springholz, G; Schwarzl, T; Aigle, M; Pascher, H; Heiss, W
      4.8 mu m vertical emitting PbTe quantum-well lasers based on high-finesse EuTe/Pb1-xEuxTe microcavities

      APPLIED PHYSICS LETTERS
    63. Sato, S
      Low threshold and high characteristic temperature 1.3 mu m range GaInNAs lasers grown by metalorganic chemical vapor deposition

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
    64. Kamiyama, S; Iwaya, M; Amano, H; Akasaki, I
      Performance of GaN-based semiconductor laser with spectral broadening due to compositional inhomogeneity in GdInN active layer

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
    65. Hayashi, N; Kamiyama, S; Takeuchi, T; Iwaya, M; Amano, H; Akasaki, I; Watanabe, S; Kaneko, Y; Yamada, N
      Electrical conductivity of low-temperature-deposited Al0.1Ga0.9N interlayer

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
    66. Joullie, A
      New developments in mid-infrared Sb-based lasers

      JOURNAL DE PHYSIQUE IV
    67. Boucart, J; Starck, C; Gaborit, F; Plais, A; Bouche, N; Derouin, E; Remy, JC; Bonnet-Gamard, J; Goldstein, L; Fortin, C; Carpentier, D; Salet, P; Brillouet, F; Jacquet, J
      Metamorphic DBR and tunnel-junction injection: A CW RT monolithic long-wavelength VCSEL

      IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS
    68. Sakharov, AV; Lundin, VV; Semenov, VA; Usikov, AS; Ledentsov, NN; Tsatsul'nikov, AF; Baidakova, MV
      Lasing in the vertical direction in quantum-size InGaN GaN multilayer heterostructures

      TECHNICAL PHYSICS LETTERS
    69. Garbuzov, DZ; Lee, H; Khalfin, V; Martinelli, R; Connolly, JC; Belenky, GL
      2.3-2.7-mu m room temperature CW operation of InGaAsSb-AlGaAsSb broad waveguide SCH-QW diode lasers

      IEEE PHOTONICS TECHNOLOGY LETTERS
    70. Boucart, J; Starck, C; Gaborit, F; Plais, A; Bouche, N; Derouin, E; Goldstein, L; Fortin, C; Carpentier, D; Salet, P; Brillouet, F; Jacquet, J
      1-mW CW-RT monolithic VCSEL at 1.55 mu m

      IEEE PHOTONICS TECHNOLOGY LETTERS
    71. Nakamura, S
      InGaN/GaN/AlGaN-based laser diodes grown on free-standing GaN substrates

      MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY
    72. Della Sala, F; Di Carlo, A; Lugli, P; Cingolani, R; Coli, G; Lomascolo, M; Botchkarev, A; Tang, H; Morkoc, H
      Carrier screening and polarization fields in nitride-based heterostructuredevices

      PHYSICA B
    73. Nakamura, S
      InGaN/GaN/AlGaN-based laser diodes grown on epitaxially laterally overgrown GaN

      JOURNAL OF MATERIALS RESEARCH
    74. Gebretsadik, H; Qasaimeh, O; Jiang, HT; Bhattacharya, P; Caneau, C; Bhat, R
      Design and realization of a 1.55-mu m patterned vertical cavity surface emitting laser with lattice-mismatched mirror layers

      JOURNAL OF LIGHTWAVE TECHNOLOGY
    75. Lee, BC
      Tight-binding calculation for the electronic structure of the wurtzite quaternary alloy AlxInyGa1-x-y-N

      JOURNAL OF THE KOREAN PHYSICAL SOCIETY
    76. Park, YS
      Current status of group III-nitride semiconductors and future prospects

      JOURNAL OF THE KOREAN PHYSICAL SOCIETY
    77. Ohshima, N; Wakahara, A; Ishida, M; Yonezu, H; Yoshida, A; Jung, YC; Miura, H
      GaN epitaxial growth on a Si(111) substrate using gamma-Al2O3 as an intermediate layer

      JOURNAL OF THE KOREAN PHYSICAL SOCIETY
    78. Yanashima, K; Hashimoto, S; Hino, T; Funato, K; Kobayashi, T; Naganuma, K; Tojyo, T; Asano, T; Asatsuma, T; Miyajima, T; Ikeda, M
      Room-temperature continuous-wave operation of GaN-based laser diodes grownby raised-pressure metalorganic chemical vapor deposition

      JOURNAL OF ELECTRONIC MATERIALS
    79. Yang, QK; Li, AZ
      Some considerations on energy levels of quantum cascade lasers

      CHINESE PHYSICS LETTERS
    80. Narukawa, Y; Kawakami, Y; Fujita, S; Nakamura, S
      Dimensionality of excitons in laser-diode structures composed of InxGa1-xNmultiple quantum wells

      PHYSICAL REVIEW B-CONDENSED MATTER
    81. Asano, T; Yanashima, K; Asatsuma, T; Hino, T; Yamaguchi, T; Tomiya, S; Funato, K; Kobayashi, T; Ikeda, M
      CW operation of AlGaInN-GaN laser diodes

      PHYSICA STATUS SOLIDI A-APPLIED RESEARCH
    82. Heppel, S; Wirth, R; Off, J; Scholz, F; Hangleiter, A; Obloh, H; Wagner, J; Kirchner, C; Kamp, M
      Mode conversion in GaN based laser structures on sapphire due to the birefringence of the nitrides

      PHYSICA STATUS SOLIDI A-APPLIED RESEARCH
    83. Pearton, SJ; Zolper, JC; Shul, RJ; Ren, F
      GaN: Processing, defects, and devices

      JOURNAL OF APPLIED PHYSICS
    84. Zhang, WL; Wang, H; Wong, KS; Tang, ZK; Wong, GKL; Jain, R
      Third-order optical nonlinearity in ZnO microcrystallite thin films

      APPLIED PHYSICS LETTERS
    85. Takeuchi, T; Detchprohm, T; Iwaya, M; Hayashi, N; Isomura, K; Kimura, K; Yamaguchi, M; Amano, H; Akasaki, I; Kaneko, Y; Shioda, R; Watanabe, S; Hidaka, T; Yamaoka, Y; Kaneko, Y; Yamada, N
      Improvement of far-field pattern in nitride laser diodes

      APPLIED PHYSICS LETTERS
    86. Kwon, YH; Gainer, GH; Bidnyk, S; Cho, YH; Song, JJ; Hansen, M; DenBaars, SP
      Structural and optical characteristics of InxGa1-xN/GaN multiple quantum wells with different In compositions

      APPLIED PHYSICS LETTERS
    87. Donovan, K; Harrison, P; Kelsall, RW
      Comparison of the quantum efficiencies of interwell and intrawell radiative transitions in quantum cascade lasers

      APPLIED PHYSICS LETTERS
    88. Sakharov, AV; Lundin, WV; Krestnikov, IL; Semenov, VA; Usikov, AS; Tsatsul'nikov, AF; Musikhin, YG; Baidakova, MV; Alferov, ZI; Ledentsov, NN; Hoffmann, A; Bimberg, D
      Surface-mode lasing from stacked InGaN insertions in a GaN matrix

      APPLIED PHYSICS LETTERS
    89. Della Sala, F; Di Carlo, A; Lugli, P; Bernardini, F; Fiorentini, V; Scholz, R; Jancu, JM
      Free-carrier screening of polarization fields in wurtzite GaN/InGaN laser structures

      APPLIED PHYSICS LETTERS
    90. Schmidt, TJ; Cho, YH; Gainer, GH; Song, JJ; Keller, S; Mishra, UK; DenBaars, SP
      Energy selective optically pumped stimulated emission from InGaN/GaN multiple quantum wells

      APPLIED PHYSICS LETTERS
    91. Hatakoshi, G; Onomura, M; Yamamoto, M; Nunoue, S; Itaya, K; Ishikawa, M
      Thermal analysis for GaN laser diodes

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
    92. Kuramata, A; Kubota, S; Soejima, R; Domen, K; Horino, K; Hacke, P; Tanahashi, T
      Continuous wave operation at room temperature of InGaN laser diodes fabricated on 4H-SiC substrates

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS
    93. POPOV A; SHERSTNEV V; YAKOVLEV Y; CIVIS S; ZELINGER Z
      INASSBP INAS LASERS (2.9 MU-M) FOR SPECTROSCOPY OF AMMONIA - LOW-TEMPERATURE INVESTIGATIONS/

      SPECTROCHIMICA ACTA PART A-MOLECULAR AND BIOMOLECULAR SPECTROSCOPY
    94. Hong, J; Lambers, ES; Abernathy, CR; Pearton, SJ; Shul, RJ; Hobson, WS
      Inductively coupled plasma and electron cyclotron resonance plasma etchingof an InGaAlP compound semiconductor system

      CRITICAL REVIEWS IN SOLID STATE AND MATERIALS SCIENCES
    95. SIRTORI C; FAIST J; CAPASSO F; CHO AY
      THE QUANTUM CASCADE LASER - A DEVICE BASED ON 2-DIMENSIONAL ELECTRONIC SUBBANDS

      Pure and applied optics
    96. BIEFELD RM; ALLERMAN AA; KURTZ SR
      RECENT ADVANCES IN MIDINFRARED (3-6 MU-M) EMITTERS

      Materials science & engineering. B, Solid-state materials for advanced technology
    97. PARK HS; WAEZSADA SD; COWLEY AH; ROESKY HW
      GROWTH OF GAN LAYER FROM THE SINGLE-SOURCE PRECURSOR (ET2GANH2)(3)

      Chemistry of materials
    98. SOREF RA; FRIEDMAN L; SUN G
      SILICON INTERSUBBAND LASERS

      Superlattices and microstructures
    99. HONG J; LEE JW; ABERNATHY CR; LAMBERS ES; PEARTON SJ; SHUL RJ; HOBSON WS
      COMPARISON OF PLASMA CHEMISTRIES FOR INDUCTIVELY-COUPLED PLASMA-ETCHING OF INGAALP ALLOYS

      Journal of vacuum science & technology. A. Vacuum, surfaces, and films
    100. ZHUKOV AE; USTINOV VM; EGOROV AY; KOVSH AR; TSATSULNIKOV AF; MAXIMOV MV; LEDENTSOV NN; ZAITSEV SV; GORDEEV NY; KOPCHATOV VI; SHERNYAKOV YM; KOPEV PS; BIMBERG D; ALFEROV ZI
      INJECTION-LASERS BASED ON INGAAS QUANTUM DOTS IN AN ALGAAS MATRIX

      Journal of electronic materials


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Documento generato il 21/10/20 alle ore 19:22:02