Catalogo Articoli (Spogli Riviste)

HELP
ATTENZIONE: attualmente gli articoli Current Contents (fonte ISI) a partire dall'anno 2002 sono consultabili sulla Risorsa On-Line

Le informazioni sugli articoli di fonte ISI sono coperte da copyright

La ricerca find articoli where soggetti phrase all words 'CMOS TECHNOLOGY' sort by level,fasc_key/DESCEND, pagina_ini_num/ASCEND ha restituito 93 riferimenti
Selezionare un intervallo

Per ulteriori informazioni selezionare i riferimenti di interesse.

    1. Guo, CC; Schmitt, P; Deptuch, G; Hu, YY
      A fully integrated, low noise and low power BiCMOS front-end readout system for capacitive detectors

      ANALOG INTEGRATED CIRCUITS AND SIGNAL PROCESSING
    2. Cheng, Y; Wu, CY; Gong, J
      The design of a 2-V 900-MHz CMOS bandpass amplifier

      ANALOG INTEGRATED CIRCUITS AND SIGNAL PROCESSING
    3. Ferri, G
      Low-voltage low-power integrated phase-shifter as resistive sensor transducer

      ANALOG INTEGRATED CIRCUITS AND SIGNAL PROCESSING
    4. Abouchi, N; Gallorini, R
      Exponential and logarithmic functions using standard CMOS 0.8 mu m technology

      ANALOG INTEGRATED CIRCUITS AND SIGNAL PROCESSING
    5. Umapathi, B; Das, S; Lahiri, SK; Kal, S
      Solid phase reaction of Ti with Si-Ge layers prepared by Ge-implantation

      JOURNAL OF ELECTRONIC MATERIALS
    6. Deval, Y; Begueret, JB; Spataro, A; Fouillat, P; Belot, D; Badets, F
      HiperLAN 5.4-GHz low-power CMOS synchronous oscillator

      IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES
    7. Palankovski, V; Belova, N; Grasser, T; Puchner, H; Aronowitz, S; Selberherr, S
      A methodology for deep sub-0.25 mu m CMOS technology prediction

      IEEE TRANSACTIONS ON ELECTRON DEVICES
    8. Tille, T; Sauerbrey, J; Schmitt-Landsiedel, D
      A 1.8-V MOSFET-only Sigma Delta modulator using substrate biased depletion-mode MOS capacitors in series compensation

      IEEE JOURNAL OF SOLID-STATE CIRCUITS
    9. Swe, TN; Yeo, KS; Chew, KW; Chu, S
      Design and optimization of novel high responsivity, wideband silicon photodiode

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
    10. Wang, CC; Chien, YT; Chen, YP
      A practical load-optimized VCO design for low-jitter 5V 500 MHz digital phase-locked loop

      VLSI DESIGN
    11. Elguibaly, F
      A fast parallel multiplier-accumulator using the modified Booth algorithm

      IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS II-ANALOG AND DIGITAL SIGNAL PROCESSING
    12. Gerardi, C; Melanotte, M; Crivelli, B; Zonca, R; Alessandri, M
      Nitridation of gate and tunnel oxides employed in CMOS-ULSI technology

      MICRON
    13. Roncaglia, A; Colalongo, L; Lange, D; Rudan, M
      Cross-talk simulation in CMOS micromachined gas-sensors with electrothermal actuation

      SENSORS AND ACTUATORS B-CHEMICAL
    14. Schott, C; Waser, JM; Popovic, RS
      Single-chip 3-D silicon Hall sensor

      SENSORS AND ACTUATORS A-PHYSICAL
    15. du Plessis, M; Aharoni, H; Snyman, LW
      A silicon transconductance light emitting device (TRANSLED)

      SENSORS AND ACTUATORS A-PHYSICAL
    16. Piotrowski, T; Jung, W
      Influence of intrinsic stresses on crystallographic defects distribution in Cz-Si wafers

      MATERIALS SCIENCE AND ENGINEERING A-STRUCTURAL MATERIALS PROPERTIES MICROSTRUCTURE AND PROCESSING
    17. Kan, EC; Liu, ZT
      Directed self-assembly process for nano-electronic devices and interconnect

      SUPERLATTICES AND MICROSTRUCTURES
    18. Lutze, J; Scott, G; Manley, M
      Transistor off-state leakage current induced by TiSi2 pre-amorphizing implant in a 0.20 mu m CMOS process

      IEEE ELECTRON DEVICE LETTERS
    19. Bassin, C; Ballan, H; Declercq, M
      High-voltage devices for 0.5-mu m standard CMOS technology

      IEEE ELECTRON DEVICE LETTERS
    20. Bruines, JJP
      Process outlook for analog and RF applications

      MICROELECTRONIC ENGINEERING
    21. Whall, TE; Parker, EHC
      SiGe - heterostructures for CMOS technology

      THIN SOLID FILMS
    22. Chen, CH; Fang, YK; Kuo, MH; Hsu, YL; Hsu, SL
      A DC current stress method to improve the voltage coefficient of resistance of the polysilicon resistor in high voltage CMOS technology

      SOLID-STATE ELECTRONICS
    23. Minehane, S; Duane, R; O'Sullivan, P; McCarthy, KG; Mathewson, A
      Design for reliability

      MICROELECTRONICS RELIABILITY
    24. Bianchi, RA; Karam, JM; Courtois, B; Nadal, R; Pressecq, F; Sifflet, S
      CMOS-compatible temperature sensor with digital output for wide temperature range applications

      MICROELECTRONICS JOURNAL
    25. Pouget, V; Lapuyade, H; Lewis, D; Deval, Y; Fouillat, P; Sarger, L
      SPICE modeling of the transient response of irradiated MOSFETs

      IEEE TRANSACTIONS ON NUCLEAR SCIENCE
    26. Lee, HD; Kim, DM; Jang, MJ
      On-chip characterization of interconnect parameters and time delay in 0.18mu m CMOS technology for ULSI circuit applications

      IEEE TRANSACTIONS ON ELECTRON DEVICES
    27. Jung, C; King, R; Jager, R; Grabherr, M; Eberhard, F; Michalzik, R; Ebeling, KJ
      Highly efficient oxide-confined VCSEL arrays for parallel optical interconnects

      JOURNAL OF OPTICS A-PURE AND APPLIED OPTICS
    28. Errachid, A; Merlos, A; Bausells, J; Carrabina, J
      Development of ISFET in a commercial CMOS technology

      QUIMICA ANALITICA
    29. Stolk, PA; Ponomarev, YV; Schmitz, J; van Brandenburg, ACMC; Roes, R; Montree, AH; Woerlee, PH
      Dopant profile engineering of advanced Si MOSFET's using ion implantation

      NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS
    30. Carmona, R; Garcia-Vargas, I; Linan, G; Dominguez-Castro, R; Espejo, S; Rodriguez-Vazquez, A
      SIRENA: A CAD environment for behavioural modelling and simulation of VLSIcellular neural network chips

      INTERNATIONAL JOURNAL OF CIRCUIT THEORY AND APPLICATIONS
    31. Hobson, RF; Cheung, KL
      A high-performance CMOS 32-bit parallel CRC engine

      IEEE JOURNAL OF SOLID-STATE CIRCUITS
    32. Law, CF; Rofail, SS; Yeo, KS
      A low-power 16 x 16-b parallel multiplier utilizing pass-transistor logic

      IEEE JOURNAL OF SOLID-STATE CIRCUITS
    33. TORELLI G; DELAPLAZZA A
      TRACKING SWITCHED-CAPACITOR CMOS CURRENT REFERENCE

      IEE proceedings. Circuits, devices and systems
    34. MURRAY AF; BUCHAN LW
      A USERS GUIDE TO NONVOLATILE, ON-CHIP ANALOG MEMORY

      Electronics & communication engineering journal
    35. PREMONT C; GRISEL R; ABOUCHI N; CHANTE JP
      A CURRENT CONVEYOR BASED FIELD-PROGRAMMABLE ANALOG ARRAY

      Analog integrated circuits and signal processing
    36. KUTA S
      CURRENT-MODE CIRCUIT IMPLEMENTATIONS OF PWL FUNCTIONS

      Analog integrated circuits and signal processing
    37. BURGER F; BESSE PA; POPOVIC RS
      NEW FULLY INTEGRATED 3-D SILICON HALL SENSOR FOR PRECISE ANGULAR-POSITION MEASUREMENTS

      Sensors and actuators. A, Physical
    38. SCHOTT C; MANIC D; POPOVIC RS
      MICROSYSTEM FOR HIGH-ACCURACY 3-D MAGNETIC-FIELD MEASUREMENTS

      Sensors and actuators. A, Physical
    39. GARCIAMORENO E; INIGUEZ B; ROCA M; SEGURA J; ISERN E
      CLOCKED DOSIMETER COMPATIBLE WITH DIGITAL CMOS TECHNOLOGY

      JOURNAL OF ELECTRONIC TESTING-THEORY AND APPLICATIONS
    40. HO CS; PEY KL; WONG H; KARUNASIRI RPG; CHUA SJ; LEE KH; CHAN LH
      INTEGRATION OF SALICIDE PROCESS FOR DEEP-SUBMICRON CMOS TECHNOLOGY - EFFECT OF NITROGEN ARGON-AMORPHIZED IMPLANT ON SALICIDE FORMATION/

      Materials science & engineering. B, Solid-state materials for advanced technology
    41. BATURONE I; SANCHEZSOLANO S; HUERTAS JL
      TOWARDS THE IC IMPLEMENTATION OF ADAPTIVE FUZZY-SYSTEMS

      IEICE transactions on fundamentals of electronics, communications and computer science
    42. FUJIMOTO R; OTAKA S; IWAI H; TANIMOTO H
      A 1.5 GHZ CMOS LOW-NOISE AMPLIFIER

      IEICE transactions on fundamentals of electronics, communications and computer science
    43. Sellami, L; Singh, SK; Newcomb, RW; Rasmussen, A; Zaghloul, ME
      VLSI floating resistors for neural type cell arrays

      JOURNAL OF CIRCUITS SYSTEMS AND COMPUTERS
    44. SNYMAN LW; AHARONI H; DUPLESSIS M; GOUWS RBJ
      INCREASED EFFICIENCY OF SILICON LIGHT-EMITTING-DIODES IN A STANDARD 1.2-MU-M SILICON COMPLEMENTARY METAL-OXIDE-SEMICONDUCTOR TECHNOLOGY

      Optical engineering
    45. ARMSTRONG GA; MAITI CK
      STRAINED-SI CHANNEL HETEROJUNCTION P-MOSFETS

      Solid-state electronics
    46. Tadic, N
      Resistive mirror-based voltage controlled resistor with generalized activedevices

      IEEE TRANSACTIONS ON INSTRUMENTATION AND MEASUREMENT
    47. HESS K; KIZILYALLI IC; LYDING JW
      GIANT ISOTOPE EFFECT IN HOT-ELECTRON DEGRADATION OF METAL-OXIDE-SILICON DEVICES

      I.E.E.E. transactions on electron devices
    48. KOVACS GTA; MALUF NI; PETERSEN KE
      BULK MICROMACHINING OF SILICON

      Proceedings of the IEEE
    49. KERSJES R; MOKWA W
      MICROSENSOR TECHNIQUES FOR CARDIOVASCULAR SYSTEMS

      Minimally invasive therapy & allied technologies
    50. BERMAK A; MARTINEZ D; NOULLET JL
      HIGH-DENSITY 16 8/4-BIT CONFIGURABLE MULTIPLIER/

      IEE proceedings. Circuits, devices and systems
    51. CHERKAUER BS; FRIEDMAN EG
      A HYBRID RADIX-4 RADIX-8 LOW-POWER SIGNED MULTIPLIER ARCHITECTURE/

      IEEE transactions on circuits and systems. 2, Analog and digital signal processing
    52. MORENO M; DOMINGUEZ C; MUNOZ J; CALDERER J; MORANTE JR
      PHOTOSENSOR AND OPTICAL-WAVE WIDE COUPLING IN SILICON TECHNOLOGY

      Sensors and actuators. A, Physical
    53. BECKMANN F; MARSCHNER J; HOFMANN T; LAUR R
      ANALYSIS OF COMPLEX IMPEDANCES IN CMOS TECHNOLOGY FOR CHEMICAL SENSORAPPLICATIONS

      Sensors and actuators. A, Physical
    54. CHEUNG TS; ASADA K
      DESIGN OF HIGH-SPEED HIGH-DENSITY PARALLEL ADDERS AND MULTIPLIERS USING REGENERATIVE PASS-TRANSISTOR LOGIC

      IEICE transactions on electronics
    55. MORENO M; CALDERER J
      LATERAL PHOTODETECTORS ON ARROW STRUCTURES FOR OPTICAL INTERCONNECTIONS

      Optics communications
    56. ALRUWAIHI KM
      A FLOATING VOLTAGE-CONTROLLED LINEAR RESISTOR AND ITS APPLICATION TO ACTIVE RC-FILTERS

      International journal of electronics
    57. ASAI S; WADA Y
      TECHNOLOGY CHALLENGES FOR INTEGRATION NEAR AND BELOW 0.1 MU-M

      Proceedings of the IEEE
    58. WU CY; HSIAO SY
      THE DESIGN OF A 3-V 900-MHZ CMOS BANDPASS-AMPLIFIER

      IEEE journal of solid-state circuits
    59. LI VZQ; MIRABEDINI MR; KUEHN RT; WORTMAN JJ; OZTURK MC; BATCHELOR D; CHRISTENSEN K; MAHER DM
      RAPID THERMAL CHEMICAL-VAPOR-DEPOSITION OF IN-SITU BORON-DOPED POLYCRYSTALLINE SILICON-GERMANIUM FILMS ON SILICON DIOXIDE FOR COMPLIMENTARY-METAL-OXIDE-SEMICONDUCTOR APPLICATIONS

      Applied physics letters
    60. CHAO TS; CHIEN CH; HAO CP; LIAW MC; CHU CH; CHANG CY; LEI TF; SUN WT; HSU CH
      SUPPRESSION OF BORON PENETRATION IN P-POLY-SI GATE METAL-OXIDE-SEMICONDUCTOR TRANSISTOR USING NITROGEN IMPLANTATION()

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
    61. KAMOSHIDA K; SAITO K
      SELF-ALIGNED TIN FORMATION BY N-2 PLASMA BIAS TREATMENT OF TISI2 DEPOSITED BY SELECTIVE CHEMICAL-VAPOR-DEPOSITION

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
    62. MANKU T; SINGH G
      ACCELERATED QUASI-DC METHOD AND CIRCUIT FOR MEASURING THE GATE-DRAIN COUPLING CAPACITANCE FOR DEVICES WITHIN A CMOS PROCESS TECHNOLOGY

      IEE proceedings. Circuits, devices and systems
    63. GERGINTSCHEW Z; KORNETZKY P; SCHIPANSKI D
      THE CAPACITIVELY CONTROLLED FIELD-EFFECT TRANSISTOR (CCFET) AS A NEW LOW-POWER GAS SENSOR

      Sensors and actuators. B, Chemical
    64. LIN HY; LEI TF; JENG JJ; PAN CL; CHANG CY
      A NOVEL STRUCTURE FOR 3-DIMENSIONAL SILICON MAGNETIC TRANSDUCERS TO IMPROVE THE SENSITIVITY SYMMETRY

      Sensors and actuators. A, Physical
    65. MULLER M; BUDDE W; GOTTFRIEDGOTTFRIED R; HUBEL A; JAHNE R; KUCK H
      A THERMOELECTRIC INFRARED RADIATION SENSOR WITH MONOLITHICALLY INTEGRATED AMPLIFIER STAGE AND TEMPERATURE SENSOR

      Sensors and actuators. A, Physical
    66. PIERCE DA; LALA PK
      MODULAR IMPLEMENTATION OF EFFICIENT SELF-CHECKING CHECKERS FOR THE BERGER CODE

      JOURNAL OF ELECTRONIC TESTING-THEORY AND APPLICATIONS
    67. RUDAN M; VECCHI MC; VONSCHWERIN A; SCHOENMAKER W; DEKEERSGIETER A; MCCARTHY K; MATHEWSON A; KLAASSEN DBM; OTTEN JAM; JONES SK; METCALFE JG
      DEVICE MODELING IN THE FRAME OF PROJECT ADEQUAT

      Microelectronic engineering
    68. FULKERSON DE; BAIER S; NOHAVA J; HOCHHALTER R
      COMPLEMENTARY HETEROSTRUCTURE FET TECHNOLOGY FOR LOW-POWER, HIGH-SPEED DIGITAL APPLICATIONS

      Solid-state electronics
    69. FREUND D; KLOS K; KOSTKA A
      CONFORMAL MAPPING TECHNIQUES FOR THE ANALYTICAL, 2-DIMENSIONAL CALCULATION OF CURRENTS IN LATERAL BIPOLAR-TRANSISTOR STRUCTURES

      Solid-state electronics
    70. RUSSO GV; PETTA C; LOPRESTI D; RANDAZZO N; RUSSO M
      SILICON DRIFT DETECTOR READOUT AND ONLINE DATA REDUCTION USING A FASTVLSI DEDICATED FUZZY PROCESSOR

      Information sciences
    71. JOHNSTON AH
      THE INFLUENCE OF VLSI TECHNOLOGY EVOLUTION ON RADIATION-INDUCED LATCHUP IN-SPACE SYSTEMS

      IEEE transactions on nuclear science
    72. VANDERVOORN PJ; KRUSIUS JP
      INVERSION CHANNEL EDGE IN TRENCH-ISOLATED SUB-1 4-MU-M MOSFETS/

      I.E.E.E. transactions on electron devices
    73. CHAO TS; CHU CH; WANG CF; HO KJ; LEI TF; LEE CL
      SUPPRESSION OF BORON PENETRATION IN BF2-IMPLANTED POLY-SI GATE()

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
    74. ARAGONES X; MOLL F; ROCA M; RUBIO A
      ANALYSIS AND MODELING OF PARASITIC SUBSTRATE COUPLING IN CMOS CIRCUITS

      IEE proceedings. Circuits, devices and systems
    75. GHOSH D; NANDY SK
      DESIGN AND REALIZATION OF HIGH-PERFORMANCE WAVE-PIPELINED 8 X 8 B MULTIPLIER IN CMOS TECHNOLOGY

      IEEE transactions on very large scale integration (VLSI) systems
    76. ELIAS JG; NORTHMORE DPM
      SWITCHED-CAPACITOR NEUROMORPHS WITH WIDE-RANGE VARIABLE DYNAMICS

      IEEE transactions on neural networks
    77. CORNILA C; HIERLEMANN A; LENGGENHAGER R; MALCOVATI P; BALTES H; NOETZEL G; WEIMAR U; GOPEL W
      CAPACITIVE SENSORS IN CMOS TECHNOLOGY WITH POLYMER COATING

      Sensors and actuators. B, Chemical
    78. BAFLEUR M; VIDAL MP; GIVELIN JBP; MACARY V; SARRABAYROUSE G
      COST-EFFECTIVE SMART POWER CMOS DMOS TECHNOLOGY - DESIGN METHODOLOGY FOR LATCH-UP IMMUNITY/

      Analog integrated circuits and signal processing
    79. GIVELIN MBP; VIDAL MP; BUXO J; MACARY V; SISKOS S; LAOPOULOS T
      COST-EFFECTIVE SMART POWER CMOS DMOS TECHNOLOGY - DESIGN OF MAIN DRIVING AND PROTECTION FUNCTIONS/

      Analog integrated circuits and signal processing
    80. STEINER FP; BALTES H
      CMOS INTEGRATED CHEMICAL MICROSENSORS

      TM. Technisches Messen
    81. CHANANA RK; UPADHYAY HN; DWIVEDI R; SRIVASTAVA SK
      ELECTRICAL-PROPERTIES OF 6.3-NM RF OXYGEN PLASMA OXIDE GROWN NEAR ROOM-TEMPERATURE WITH IN-SITU DRY-CLEANING OF SI SURFACE

      Solid-state electronics
    82. JANKOVIC ND; BUSHEHRI E
      THEORETICAL AND EXPERIMENTAL EVALUATION OF HIGH-VOLTAGE CMOS INVERTERS

      IEE proceedings. Circuits, devices and systems
    83. WILSON G; CHAN PK
      ANALYSIS OF NONLINEARITIES IN MOS FLOATING RESISTOR NETWORKS

      IEE proceedings. Circuits, devices and systems
    84. LEDUDAL R; HILLARD RJ; HEDDLESON JM; WEINZIERL SR; RAICHOUDHURY P; MAZUR RG
      ACCURATE PROFILING OF ULTRA-SHALLOW IMPLANTS WITH MERCURY GATE METAL-OXIDE-SEMICONDUCTOR CAPACITANCE-VOLTAGE

      Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena
    85. MEAD CA
      SCALING OF MOS TECHNOLOGY TO SUBMICROMETER FEATURE SIZES

      Analog integrated circuits and signal processing
    86. VITTOZ EA
      ANALOG VLSI SIGNAL-PROCESSING - WHY, WHERE, AND HOW

      Analog integrated circuits and signal processing
    87. NEDEV N; SMIRNOV N
      2-DIMENSIONAL MODELING OF A LATERAL MAGNETOTRANSISTOR

      Sensors and actuators. A, Physical
    88. MATTOGNO G; RIGHINI G; MONTESPERELLI G; TRAVERSA E
      X-RAY PHOTOELECTRON-SPECTROSCOPY INVESTIGATION OF MGAL2O4 THIN-FILMS FOR HUMIDITY SENSORS

      Journal of materials research
    89. VERDONCKTVANDEBROEK S; CRABBE EF; MEYERSON BS; HARAME DL; RESTLE PJ; STORK JMC; JOHNSON JB
      SIGE-CHANNEL HETEROJUNCTION P-MOSFETS

      I.E.E.E. transactions on electron devices
    90. FITCH JT
      SELECTIVITY MECHANISMS IN LOW-PRESSURE SELECTIVE EPITAXIAL SILICON GROWTH

      Journal of the Electrochemical Society
    91. MAEX K
      SILICIDES FOR INTEGRATED-CIRCUITS - TISI2 AND COSI2

      Materials science & engineering. R, Reports
    92. BALTES H
      MICROSENSORS BETWEEN PHYSICS AND TECHNOLOGY

      Physica scripta. T
    93. HUANG CL; ARORA ND
      MEASUREMENTS AND MODELING OF MOSFET-IV CHARACTERISTICS WITH POLYSILICON DEPLETION EFFECT

      I.E.E.E. transactions on electron devices


ASDD Area Sistemi Dipartimentali e Documentali, Università di Bologna, Catalogo delle riviste ed altri periodici
Documento generato il 30/10/20 alle ore 18:21:26