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La ricerca find articoli where soggetti phrase all words 'CHEMICAL MECHANICAL POLISHING' sort by level,fasc_key/DESCEND, pagina_ini_num/ASCEND ha restituito 114 riferimenti
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    1. Wang, GJ; Chen, JL; Hwang, JY
      New optimization strategy for Chemical Mechanical Polishing process

      JSME INTERNATIONAL JOURNAL SERIES C-MECHANICAL SYSTEMS MACHINE ELEMENTS AND MANUFACTURING
    2. Watanabe, J; Etoh, R; Hirano, M
      A novel chemical-mechanical planarization technology using pre-thin-surface grinding in ULSI manufacturing process

      PRECISION MACHINING OF ADVANCED MATERIALS
    3. Tso, PL; Wang, YY; Tsai, MJ
      A study of carrier motion on a dual-face CMP machine

      JOURNAL OF MATERIALS PROCESSING TECHNOLOGY
    4. Hayashi, Y; Kawahara, J; Shiba, K; Tagami, M; Saito, S; Onodera, T; Kinoshita, K; Hiroi, M
      Process and structure designs for high performance Cu low-k interconnects

      NEC RESEARCH & DEVELOPMENT
    5. Saddow, SE; Schattner, TE; Brown, J; Grazulis, L; Mahalingam, K; Landis, G; Bertke, R; Mitchel, WC
      Effects of substrate surface preparation on chemical vapor deposition growth of 4H-SiC epitaxial layers

      JOURNAL OF ELECTRONIC MATERIALS
    6. Nelson, CL; Mitchel, WC; Hengehold, RL
      Effects of process parameter variations on the removal rate in chemical mechanical polishing of 4H-SiC

      JOURNAL OF ELECTRONIC MATERIALS
    7. Tian, RQ; Wong, DF; Boone, R
      Model-based dummy feature placement for oxide chemical-mechanical polishing manufacturability

      IEEE TRANSACTIONS ON COMPUTER-AIDED DESIGN OF INTEGRATED CIRCUITS AND SYSTEMS
    8. Lin, ZC; Liu, CY
      Application of an adaptive neuro-fuzzy inference system for the optimal analysis of chemical-mechanical polishing process parameters

      INTERNATIONAL JOURNAL OF ADVANCED MANUFACTURING TECHNOLOGY
    9. Sreejith, PS; Udupa, G; Noor, YBM; Ngoi, BKA
      Recent advances in machining of silicon wafers for semiconductor applications

      INTERNATIONAL JOURNAL OF ADVANCED MANUFACTURING TECHNOLOGY
    10. Kuo, HS; Tsai, WT
      Effects of alumina and hydrogen peroxide on the chemical-mechanical polishing of aluminum in phosphoric acid base slurry

      MATERIALS CHEMISTRY AND PHYSICS
    11. Perry, SS; Galloway, HC; Cao, P; Mitchell, EJR; Koeck, DC; Smith, CL; Lim, MS
      The influence of chemical treatments on tungsten films found in integratedcircuits

      APPLIED SURFACE SCIENCE
    12. van Schaijk, R; Wils, N; Slotboom, M; Widdershoven, F
      Compact poly-CMP embedded flash memory

      MICROELECTRONIC ENGINEERING
    13. Nguyen, VH; Hof, AJ; van Kranenburg, H; Woerlee, PH; Weimar, F
      Copper chemical mechanical polishing using a slurry-free technique

      MICROELECTRONIC ENGINEERING
    14. Zhang, L; Subramanian, RS
      A model of abrasive-free removal of copper films using an aqueous hydrogenperoxide-glycine solution

      THIN SOLID FILMS
    15. Cho, CH; Park, SS; Ahn, Y
      Three-dimensional wafer scale hydrodynamic modeling for chemical mechanical polishing

      THIN SOLID FILMS
    16. Borst, CL; Korthuis, V; Shinn, GB; Luttmer, JD; Gutmann, RJ; Gill, WN
      Chemical-mechanical polishing of SiOC organosilicate glasses: the effect of film carbon content

      THIN SOLID FILMS
    17. Cooper, K; Gupta, A; Beaudoin, S
      Simulation of the adhesion of particles to surfaces

      JOURNAL OF COLLOID AND INTERFACE SCIENCE
    18. Yagishita, A; Saito, T; Nakajima, K; Inumiya, S; Matsuo, K; Shibata, T; Tsunashima, Y; Suguro, K; Arikado, T
      Improvement of threshold voltage deviation in damascene metal gate transistors

      IEEE TRANSACTIONS ON ELECTRON DEVICES
    19. Lee, KD; Suh, NP; Oh, JH
      Axiomatic Design of machine control system

      CIRP ANNALS-MANUFACTURING TECHNOLOGY
    20. Saka, N; Lai, JY; Chun, JH; Suh, NP
      Mechanisms of the chemical mechanical polishing (CMP) process in integrated circuit fabrication

      CIRP ANNALS-MANUFACTURING TECHNOLOGY
    21. Moussavi, M
      Conventional interconnects: the crisis

      COMPTES RENDUS DE L ACADEMIE DES SCIENCES SERIE IV PHYSIQUE ASTROPHYSIQUE
    22. Schnabel, RF; Beitel, G; Mainka, G; Sanger, A; Bosk, P; Chen, Z; Small, R; Dehm, C
      Patterning of noble metal electrodes and oxygen barriers by CMP

      INTEGRATED FERROELECTRICS
    23. Doy, TK
      CMP and its processing mechanism

      JOURNAL OF JAPANESE SOCIETY OF TRIBOLOGISTS
    24. Nishioka, T
      Effects of mechanical factors on planarity and uniformity in CMP process

      JOURNAL OF JAPANESE SOCIETY OF TRIBOLOGISTS
    25. Ouyang, C; Ryu, K; Milor, L; Maly, W; Hill, G; Peng, YK
      An analytical model of multiple ILD thickness variation induced by interaction of layout pattern and CMP process

      IEEE TRANSACTIONS ON SEMICONDUCTOR MANUFACTURING
    26. Patel, NS; Miller, GA; Guinn, C; Sanchez, AC; Jenkins, ST
      Device dependent control of chemical-mechanical polishing of dielectric films

      IEEE TRANSACTIONS ON SEMICONDUCTOR MANUFACTURING
    27. Ding, M; Kim, H; Akinwande, AI
      Highly uniform and low turn-on voltage Si field emitter arrays fabricated using chemical mechanical polishing

      IEEE ELECTRON DEVICE LETTERS
    28. Park, SS; Cho, CH; Ahn, Y
      Hydrodynamic analysis of chemical mechanical polishing process

      TRIBOLOGY INTERNATIONAL
    29. Kuchenmeister, F; Schubert, U; Wenzel, C
      SiLK dielectric planarization by chemical mechanical polishing

      MICROELECTRONIC ENGINEERING
    30. Schnabel, RF; Clevenger, LA; Costrini, G; Dobuzinsky, DM; Filippi, R; Gambino, J; Lee, GY; Iggulden, RC; Lin, C; Lu, ZG; Ning, XJ; Ramachandran, R; Ronay, M; Tobben, D; Weber, SJ
      Aluminum dual damascene metallization for 0.175 mu m DRAM generations and beyond - (invited)

      MICROELECTRONIC ENGINEERING
    31. Nguyen, V; VanKranenburg, H; Woerlee, P
      Dependency of dishing on polish time and slurry chemistry in CuCMP

      MICROELECTRONIC ENGINEERING
    32. Zeidler, D; Plotner, M; Drescher, K
      Endpoint detection method for CMP of copper

      MICROELECTRONIC ENGINEERING
    33. Tsai, WT; Huang, TM
      Abrasion and dissolution interaction of Al in a phosphoric acid solution

      THIN SOLID FILMS
    34. Heeg, J; Schubert, U; Kuchenmeister, F
      Surface chemistry of planarized SiLK-films studied by XPS

      MIKROCHIMICA ACTA
    35. Palla, BJ; Shah, DO
      Stabilization of high ionic strength slurries using the synergistic effects of a mixed surfactant system

      JOURNAL OF COLLOID AND INTERFACE SCIENCE
    36. Ha, D; Shin, D; Koh, GH; Lee, J; Lee, S; Ahn, YS; Jeong, H; Chung, T; Kim, K
      A cost effective embedded DRAM integration for high density memory and high performance logic using 0.15 mu m technology node and beyond

      IEEE TRANSACTIONS ON ELECTRON DEVICES
    37. Yagishita, A; Saito, T; Nakajima, K; Inumiya, S; Akasaka, Y; Ozawa, Y; Hieda, K; Tsunashima, Y; Suguro, K; Arikado, T; Okumura, K
      High performance damascene metal gate MOSFET's for 0.1 mu m regime

      IEEE TRANSACTIONS ON ELECTRON DEVICES
    38. Lewis, A; Shambrot, E; Radko, A; Lieberman, K; Ezekiel, S; Veinger, D; Yampolski, G
      Failure analysis of integrated circuits beyond the diffraction limit: Contact mode near-field scanning optical microscopy with integrated resistance,capacitance, and UV confocal imaging

      PROCEEDINGS OF THE IEEE
    39. Igarashi, Y; Tani, K; Kasai, M; Ashikaga, K; Ito, T
      Submicron ferroelectric capacitors fabricated by chemical mechanical polishing process for high-density ferroelectric memories

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
    40. Kondo, S; Sakuma, N; Homma, Y; Ohashi, N
      Slurry chemical corrosion and galvanic corrosion during copper chemical mechanical polishing

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
    41. Veldhuis, GJ; Nauta, T; Gui, C; Berenschot, JW; Lambeck, PV
      Electrostatically actuated mechanooptical waveguide ON-OFF switch showing high extinction at a low actuation-voltage

      IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS
    42. Yasseen, AA; Smith, SW; Merat, FL; Mehregany, M
      Diffraction grating scanners using polysilicon micromotors

      IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS
    43. Yasseen, AA; Cawley, JD; Mehregany, M
      Thick glass film technology for polysilicon surface micromachining

      JOURNAL OF MICROELECTROMECHANICAL SYSTEMS
    44. Dickinson, JT; Hariadi, RF; Scudiero, L; Langford, SC
      A scanning force microscope study of detachment of nanometer-sized particles from glass surfaces

      TRIBOLOGY LETTERS
    45. Scudiero, L; Langford, SC; Dickinson, JT
      Scanning force microscope observations of corrosive wear on single-crystalbrushite (CaHPO4 center dot 2H(2)O) in aqueous solution

      TRIBOLOGY LETTERS
    46. Kahng, AB; Robins, G; Singh, A; Zelikovsky, A
      Filling algorithms and analyses for layout density control

      IEEE TRANSACTIONS ON COMPUTER-AIDED DESIGN OF INTEGRATED CIRCUITS AND SYSTEMS
    47. Hu, TC; Chiu, SY; Dai, BT; Tsai, MS; Tung, IC; Feng, MS
      Nitric acid-based slurry with citric acid as an inhibitor for copper chemical mechanical polishing

      MATERIALS CHEMISTRY AND PHYSICS
    48. Park, SB; Kim, YU; Ko, YG; Kim, KI; Kim, IK; Kang, HS; Yu, JO; Suh, KP
      A 0.25-mu m 600-MHz, 1.5-V, fully depleted SOICMOS 64-bit microprocessor

      IEEE JOURNAL OF SOLID-STATE CIRCUITS
    49. Zhong, L; Yang, J; Holland, K; Grillaert, J; Devriend, K; Heylen, N; Meuris, M
      A static model for scratches generated during aluminum chemical-mechanicalpolishing process: Orbital technology

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
    50. SANCHEZ S; ELWENSPOEK M; GUI CQ; DENIVELLE MJME; DEVRIES R; DEKORTE PAJ; BRUIJN MP; WIJNBERGEN JJ; MICHALKE W; STEINBEISS E; HEIDENBLUT T; SCHWIERZI B
      A HIGH-T-C SUPERCONDUCTOR BOLOMETER ON A SILICON-NITRIDE MEMBRANE

      Journal of microelectromechanical systems
    51. GUI C; DEBOER M; GARDENIERS JGE; JANSEN H; BERENSCHOT JW; ELWENSPOEK M
      FABRICATION OF MULTILAYER SUBSTRATES FOR HIGH-ASPECT-RATIO SINGLE-CRYSTALLINE MICROSTRUCTURES

      Sensors and actuators. A, Physical
    52. RUNNELS SR; KIM M; SCHLEUTER J; KARLSRUD C; DESAI M
      A MODELING TOOL FOR CHEMICAL-MECHANICAL POLISHING DESIGN AND EVALUATION

      IEEE transactions on semiconductor manufacturing
    53. STINE BE; OUMA DO; DIVECHA RR; BONING DS; CHUNG JE; HETHERINGTON DL; HARWOOD CR; NAKAGAWA OS; OH SY
      RAPID CHARACTERIZATION AND MODELING OF PATTERN-DEPENDENT VARIATION INCHEMICAL-MECHANICAL POLISHING

      IEEE transactions on semiconductor manufacturing
    54. PARK M; YU HK; KOO JG; JANG J; NAM KS
      HIGH-QUALITY CONFORMAL SILICON-OXIDE FILMS PREPARED BY MULTISTEP SPUTTERING PECVD AND CHEMICAL-MECHANICAL POLISHING

      Journal of electronic materials
    55. BIBBY T; HOLLAND K
      END-POINT DETECTION FOR CMP

      Journal of electronic materials
    56. ROGERS C; COPPETA J; RACZ L; PHILIPOSSIAN A; KAUFMAN FB; BRAMONO D
      ANALYSIS OF FLOW BETWEEN A WAFER AND PAD DURING CMP PRECESSES

      Journal of electronic materials
    57. TOWERY D; FURY MA
      CHEMICAL-MECHANICAL POLISHING OF POLYMER-FILMS

      Journal of electronic materials
    58. BUSNAINA AA; ELSAWY TM
      POST-CMP CLEANING USING ACOUSTIC STREAMING

      Journal of electronic materials
    59. ALEXE M; HESSE D; GOSELE U
      DEPOSITION AND PROCESSING OF BISMUTH TITANATE THIN-FILMS FOR DIRECT WAFER BONDING

      Materials chemistry and physics
    60. WANG YL; LIU C; FENG MS; TSENG WT
      THE EXOTHERMIC REACTION AND TEMPERATURE-MEASUREMENT FOR TUNGSTEN CMP TECHNOLOGY AND ITS APPLICATION ON END-POINT DETECTION

      Materials chemistry and physics
    61. WANG YL; LIU C; FENG MS; TSENG WT
      A MODIFIED MULTI-CHEMICALS SPRAY CLEANING PROCESS FOR POST-CMP CLEANING APPLICATION

      Materials chemistry and physics
    62. GROVER GS; LIANG H; GANESHKUMAR S; FORTINO W
      EFFECT OF SLURRY VISCOSITY MODIFICATION ON OXIDE AND TUNGSTEN CMP

      Wear
    63. WANG YL; WANG TC; WU J; TSENG WT; LIN CF
      A MODIFIED MULTI-CHEMICAL SPRAY CLEANING PROCESS FOR POST SHALLOW TRENCH ISOLATION CHEMICAL-MECHANICAL POLISHING CLEANING APPLICATION

      Thin solid films
    64. HU YZ; GUTMANN RJ; CHOW TP; WITCRAFT B
      CHEMICAL-MECHANICAL POLISHING FOR GIANT MAGNETORESISTANCE DEVICE INTEGRATION

      Thin solid films
    65. WANG YL; WU J; LIU CW; WANG TC; DUN JW
      MATERIAL CHARACTERISTICS AND CHEMICAL-MECHANICAL POLISHING OF ALUMINUM-ALLOY THIN-FILMS

      Thin solid films
    66. MENDONCA J; MURELLA K; KIM I; SCHLUETER J; KARLSRUD C
      EXPLORING CMP SOLUTIONS TO PLANARITY CHALLENGES WITH TUNGSTEN PLUGS

      Thin solid films
    67. Luo, Q; Ramarajan, S; Babu, SV
      Modification of the Preston equation for the chemical-mechanical polishingof copper

      THIN SOLID FILMS
    68. Yang, GR; Zhao, YP; Hu, YZ; Chow, TP; Gutmann, RJ
      XPS and AFM study of chemical mechanical polishing of silicon nitride

      THIN SOLID FILMS
    69. BUSSMANN K; CHENG SF; PRINZ GA; HU Y; GUTMANN R; WANG D; BEECH R; ZHU J
      CPP GIANT MAGNETORESISTANCE OF NIFECO CU/COFE/CU MULTILAYERS/

      IEEE transactions on magnetics
    70. STINE BE; BONING DS; CHUNG JE; CAMILLETTI L; KRUPPA F; EQUI ER; LOH W; PRASAD S; MUTHUKRISHNAN M; TOWERY D; BERMAN M; KAPOOR A
      THE PHYSICAL AND ELECTRICAL EFFECTS OF METAL-FILL PATTERNING PRACTICES FOR OXIDE CHEMICAL-MECHANICAL POLISHING PROCESSES

      I.E.E.E. transactions on electron devices
    71. VASS DG; HOSSACK WJ; NATH S; OHARA A; RANKIN ID; SNOOK MWG; UNDERWOOD I; WORBOYS MR; GRIFFITH MS; RADCLIFFE S; MACINTOSH D; HARKNESS J; MITCHEL B; RICKARD G; HARRIS J; JUDD E
      A HIGH-RESOLUTION, FULL-COLOR, HEAD MOUNTED FERROELECTRIC LIQUID CRYSTAL-OVER-SILICON DISPLAY

      Ferroelectrics (Print)
    72. PARK H; CHO YJ; SONG JI; KOH YB; LEE MY
      A NEW POSTTREATMENT FOR CHEMICAL-MECHANICAL POLISHING PROCESS OF VERYLARGE-SCALE INTEGRATED-CIRCUIT TUNGSTEN VIAS

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
    73. ITOH A; IMAI M; ARIMOTO K
      PHOTORESIST CHEMICAL-MECHANICAL POLISHING FOR SHALLOW TRENCH ISOLATION

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
    74. MATSUMOTO T; SATOH M; SAKUMA K; KURINO H; MIYAKAWA N; ITANI H; KOYANAGI M
      NEW 3-DIMENSIONAL WAFER BONDING TECHNOLOGY USING THE ADHESIVE INJECTION METHOD

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
    75. LEE SH; SON JH; LEE HD; YANG W; LEE YJ
      SHALLOW TRENCH ISOLATION CHARACTERISTICS WITH HIGH-DENSITY-PLASMA CHEMICAL-VAPOR-DEPOSITION GAP-FILL OXIDE FOR DEEP-SUBMICRON CMOS TECHNOLOGIES

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
    76. Park, H; Kim, KB; Hong, CK; Chung, UI; Lee, MY
      Control of microscratches in chemical-mechanical polishing process for shallow trench isolation

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
    77. WATANABE J
      POLISHING MECHANISM OF MECHANOCHEMICAL AN D CHEMICAL-MECHANICAL POLISHING

      Toraiborojisuto
    78. DOY TK
      ULTRA-PRECISION POLISHING CMP TECHNOLOGY IN FABRICATION PROCESS OF NEXT-GENERATION SEMICONDUCTORS AND ITS APPLICATION

      Toraiborojisuto
    79. YANG GR; ZHAO YP; NEIRYNCK JM; MURARKA SP; GUTMANN RJ
      CHEMICAL-MECHANICAL POLISHING OF PARYLENE-N FILMS - EVALUATION BY X-RAY PHOTOELECTRON-SPECTROSCOPY AND ATOMIC-FORCE MICROSCOPY

      Journal of electronic materials
    80. MORISAWA Y; KIKUMA I; TAKAYAMA N; TAKEUCHI M
      EFFECT OF SIO2 POWDER ON MIRROR POLISHING OF INP WAFERS

      Journal of electronic materials
    81. WANG MT; YEH WK; TSAI MS; TSENG WT; CHANG TC; CHEN LJ; CHEN MC
      CHEMICAL-MECHANICAL POLISHING FOR SELECTIVE CVD-W

      Materials chemistry and physics
    82. FAYOLLE M; ROMAGNA F
      COPPER CMP EVALUATION - PLANARIZATION ISSUES

      Microelectronic engineering
    83. STAVREVA Z; ZEIDLER D; PLOTNER M; DRESCHER K
      INFLUENCE OF PROCESS PARAMETERS ON CHEMICAL-MECHANICAL POLISHING OF COPPER

      Microelectronic engineering
    84. ZEIDLER D; STAVREVA Z; PLOTNER M; DRESCHER K
      THE INTERACTION BETWEEN DIFFERENT BARRIER METALS AND THE COPPER SURFACE DURING THE CHEMICAL-MECHANICAL POLISHING

      Microelectronic engineering
    85. FAYOLLE M; SICURANI E; MORAND Y
      W-CMP PROCESS INTEGRATION - CONSUMABLES EVALUATION - ELECTRICAL RESULTS AND END-POINT DETECTION

      Microelectronic engineering
    86. STAVREVA Z; ZEIDLER D; PLOTNER M; GRASSHOFF G; DRESCHER K
      CHEMICAL-MECHANICAL POLISHING OF COPPER FOR INTERCONNECT FORMATION

      Microelectronic engineering
    87. ZEIDLER D; STAVREVA Z; PLOTNER M; DRESCHER K
      CHARACTERIZATION OF CU CHEMICAL-MECHANICAL POLISHING BY ELECTROCHEMICAL INVESTIGATIONS

      Microelectronic engineering
    88. LIANG H; KAUFMAN F; SEVILLA R; ANJUR S
      WEAR PHENOMENA IN CHEMICAL-MECHANICAL POLISHING

      Wear
    89. MESS F; LEVERT J; DANYLUK S
      VERTICAL DIFFERENTIAL DISPLACEMENTS AT A PAD SAPPHIRE INTERFACE DURING POLISHING/

      Wear
    90. WANG MT; TSAI MS; LIU C; TSENG WT; CHANG TC; CHEN LJ; CHENG MC
      EFFECTS OF CORROSION ENVIRONMENTS ON THE SURFACE FINISHING OF COPPER CHEMICAL-MECHANICAL POLISHING

      Thin solid films
    91. SRINIVASAMURTHY C; WANG D; BEAUDOIN SP; BIBBY T; HOLLAND K; CALE TS
      STRESS-DISTRIBUTION IN CHEMICAL-MECHANICAL POLISHING

      Thin solid films
    92. WANG YL; LIU C; FENG MS; DUN JW; CHOU KS
      EFFECTS OF UNDERLYING FILMS ON THE CHEMICAL-MECHANICAL POLISHING FOR SHALLOW TRENCH ISOLATION TECHNOLOGY

      Thin solid films
    93. WANG YL; LIU C; CHANG ST; TSAI MS; FENG MS; TSENG WT
      CHEMICAL-MECHANICAL POLISHING OF LOW-DIELECTRIC-CONSTANT SPIN-ON-GLASSES - FILM CHEMISTRIES, SLURRY FORMULATION AND POLISH SELECTIVITY

      Thin solid films
    94. HU YZ; GUTMANN RJ; CHOW TP; BUSSMANN K; CHENG SF; PRINZ GA
      CHEMICAL-MECHANICAL POLISHING AS AN ENABLING TECHNOLOGY FOR GIANT MAGNETORESISTANCE DEVICES

      Thin solid films
    95. WANG YL; TSENG WT; FENG MS
      INTEGRATION OF MODIFIED PLASMA-ENHANCED CHEMICAL-VAPOR-DEPOSITED TETRAETHOXYSILANE INTERMETAL DIELECTRIC AND CHEMICAL-MECHANICAL POLISHING PROCESSES FOR 0.35 MU-M IC DEVICE RELIABILITY IMPROVEMENT

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
    96. NAKAMURA K; KISHII S; ARIMOTO Y
      RECONDITIONING-FREE POLISHING FOR INTERLAYER-DIELECTRIC PLANARIZATION

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
    97. MORIYAMA S; YAMAGUCHI K; HONMA Y; YASUI K
      AN END-POINT DETECTOR FOR PLANARIZATION OF SEMICONDUCTOR-DEVICES BY CHEMICAL-MECHANICAL POLISHING

      International journal of the Japan Society for Precision Engineering
    98. RAJAN K
      CHEMICAL-MECHANICAL POLISHING OF OXIDE THIN-FILMS - THE REBINDER-WESTWOOD PHENOMENON REVISITED

      Journal of electronic materials
    99. RICKER RE; MILLER AE; YUE DF; BANERJEE G; BANDYOPADHYAY S
      NANOFABRICATION OF A QUANTUM-DOT ARRAY - ATOMIC-FORCE MICROSCOPY OF ELECTROPOLISHED ALUMINUM

      Journal of electronic materials
    100. SAINIO CA; DUQUETTE DJ; STEIGERWALD J; MURARKA SP
      ELECTROCHEMICAL EFFECTS IN THE CHEMICAL-MECHANICAL POLISHING OF COPPER FOR INTEGRATED-CIRCUITS

      Journal of electronic materials


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Documento generato il 06/08/20 alle ore 16:07:38