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La ricerca find articoli where soggetti phrase all words 'BAND-OFFSET' sort by level,fasc_key/DESCEND, pagina_ini_num/ASCEND ha restituito 126 riferimenti
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    1. Simoen, E; Loo, R; Roussel, P; Caymax, M; Bender, H; Claeys, C; Herzog, HJ; Blondeel, A; Clauws, P
      Defect analysis of n-type silicon strained layers

      MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
    2. Robertson, J
      Schottky barrier heights and band offsets of high-K dielectrics

      INTEGRATED FERROELECTRICS
    3. Guo, CZ; Chen, SL; Zhang, YH
      Shortwave limit of infrared intersubband quantum cascade lasers

      JOURNAL OF INFRARED AND MILLIMETER WAVES
    4. Luo, XD; Xu, ZY; Pan, Z; Li, LH; Lin, YW; Ge, WK
      Optical properties and band lineup in GaNxAs1-x/GaAs single quantum wells

      JOURNAL OF INFRARED AND MILLIMETER WAVES
    5. Wang, RZ; Zheng, YM; Li, SP
      Study on physical connotation of average bond energy E-m

      ACTA PHYSICA SINICA
    6. Minemoto, T; Matsui, T; Takakura, H; Hamakawa, Y; Negami, T; Hashimoto, Y; Uenoyama, T; Kitagawa, M
      Theoretical analysis of the effect of conduction band offset of window/CISlayers on performance of CIS solar cells using device simulation

      SOLAR ENERGY MATERIALS AND SOLAR CELLS
    7. Ettema, ARHF; Murtagh, CF; Starnberg, HI
      Photoemission spectroscopy study of the charge accumulation at the K3Sb : Cs surface

      APPLIED SURFACE SCIENCE
    8. Lourenco, MA; Butler, TM; Kewell, AK; Gwilliam, RM; Kirkby, KJ; Homewood, KP
      Electrical, electronic and optical characterisation of ion beam synthesised beta-FeSi2 light emitting devices

      NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS
    9. Lucovsky, G; Whitten, JL; Zhang, Y
      A molecular orbital model for the electronic structure of transition metalatoms in silicate and aluminate alloys

      MICROELECTRONIC ENGINEERING
    10. Miyazaki, S; Narasaki, M; Ogasawara, M; Hirose, M
      Characterization of ultrathin zirconium oxide films on silicon using photoelectron spectroscopy

      MICROELECTRONIC ENGINEERING
    11. Lay, TS; Hong, M; Kwo, J; Mannaerts, JP; Hung, WH; Huang, DJ
      Energy-band parameters at the GaAs- and GaN-Ga2O3(Gd2O3) interfaces

      SOLID-STATE ELECTRONICS
    12. Yoon, IT; Han, SY; Park, HL; Kim, TW
      Amphoteric behavior of Ge dopants in In0.5Ga0.5P epilayers grown on GaAs(100) substrates

      JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS
    13. Aurand, A; Leymarie, J; Vasson, A; Mesrine, M; Massies, J; Leroux, M
      Investigation of the P-As substitution at GaAs/Ga0.51In0.49P interfaces byphotoluminescence under pressure

      JOURNAL OF APPLIED PHYSICS
    14. Lee, S; Dobrowolska, M; Furdyna, JK; Ram-Mohan, LR
      Magnetic-field-induced substructures in multiple quantum wells consisting of magnetic and nonmagnetic semiconductor layers

      PHYSICAL REVIEW B
    15. Li, SP; Wang, RZ; Zheng, YM; Cai, SH; He, GM
      Appllications of average-bond-energy method in strained-layer heterojunction band offset

      ACTA PHYSICA SINICA
    16. Malikova, L; Pollak, FH; Gorea, O; Korotcov, A
      Modulation spectroscopy study of a strained layer GaAs/GaAsP multiple quantum well structure

      JOURNAL OF ELECTRONIC MATERIALS
    17. Horn, K
      Photoemission studies of barrier heights in metal-semiconductor interfacesand heterojunctions

      APPLIED SURFACE SCIENCE
    18. Eich, D; Hubner, D; Ortner, K; Kilian, L; Becker, R; Landwehr, G; Fink, R; Umbach, E
      Photoemission investigation of MBE-grown HgSe/CdSe heterostructures

      APPLIED SURFACE SCIENCE
    19. Kreis, C; Traving, M; Adelung, R; Kipp, L; Skibowski, M
      Tracing the valence band maximum during epitaxial growth of HfS2 on WSe2

      APPLIED SURFACE SCIENCE
    20. Lucovsky, G; Phillips, JC
      Limitations for aggressively scaled CMOS Si devices due to bond coordination constraints and reduced band offset energies at Si-high-k dielectric interfaces

      APPLIED SURFACE SCIENCE
    21. Bottazzi, C; Parisini, A; Tarricone, L; Magnanini, R; Baraldi, A
      Optical properties of GaSb/Al0.4Ga0.6Sb multiple quantum wells

      PHYSICAL REVIEW B
    22. Nakayama, T; Murayama, M
      Electronic structures of hexagonal ZnO/GaN interfaces

      JOURNAL OF CRYSTAL GROWTH
    23. Kozlovsky, VI; Sadofyev, YG; Litvinov, VG
      Deep-level transient spectroscopy and cathodoluminescence of CdxZn1-xTe/ZnTe QW structures grown on GaAs(100) by MBE

      JOURNAL OF CRYSTAL GROWTH
    24. Sassen, S; Witzigmann, B; Wolk, C; Brugger, H
      Barrier height engineering on GaAs THz Schottky diodes by means of high-low doping, InGaAs- and InGaP-layers

      IEEE TRANSACTIONS ON ELECTRON DEVICES
    25. Agrawal, BK; Agrawal, S
      First-principles study of one-dimensional quantum-confined H-passivated ultrathin Si films

      APPLIED PHYSICS LETTERS
    26. Chen, JF; Wang, JS; Wang, PY; Chen, NC; Hsu, NC
      Admittance spectroscopy and thermal stimulation current for band-offset characteristics in AlAs/GaAs n(+)-p structures

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
    27. Kim, K; Kim, HS; Lee, HJ
      Point-defect associated thermionic hole emissions from p-type Si/Si1-xGex/Si quantum well structures

      JOURNAL OF SOLID STATE ELECTROCHEMISTRY
    28. Guillot, C; Achard, J; Barbarin, F; Dugay, M
      Capacitance-voltage profiling and thermal evolution of the conduction band-offset of unstrained Ga0.47In0.53As/InP single quantum well

      JOURNAL OF ELECTRONIC MATERIALS
    29. Becker, CR; Latussek, V; Li, M; Pfeuffer-Jeschke, A; Landwehr, G
      Valence band offset in HgTe/Hg1-xCdxTe superlattices

      JOURNAL OF ELECTRONIC MATERIALS
    30. Bera, LK; Ray, SK; Nayak, DK; Usami, N; Shiraki, Y; Maiti, CK
      Gas source molecular beam epitaxy grown strained-Si films on step-graded relaxed Si1-xGex for MOS applications

      JOURNAL OF ELECTRONIC MATERIALS
    31. Wang, HQ; Zheng, JC; Wang, RZ; Zheng, YM; Cai, SH
      Valence-band offsets of III-V alloy heterojunctions

      SURFACE AND INTERFACE ANALYSIS
    32. Shaw, MJ; Jaros, M
      Fundamental physics of strained layer GeSi: Quo vadis?

      GERMANIUM SILICON: PHYSICS AND MATERIALS
    33. Pan, M; Wilks, SP; Dunstan, PR; Pritchard, M; Williams, RH; Cammack, DS; Clark, SA
      Effect of a ZnSe intralayer on the Si/Ge(111) heterojunction band offsets

      THIN SOLID FILMS
    34. Agrawal, BK; Agrawal, S; Srivastava, R
      Effect of atomic relaxation on the valence band offset and the interface states in ZnS/ZnSe(110) superlattices

      SURFACE SCIENCE
    35. Krispin, P; Lazzari, JL; Kostial, H
      Interfacial deep-level defects as probes for ultrathin InAs insertions in GaAs

      JOURNAL OF CRYSTAL GROWTH
    36. Miyamoto, T; Takeuchi, K; Kageyama, T; Koyama, F; Iga, K
      Chemical beam epitaxy of GaInNAs/GaAs quantum wells and its optical absorption property

      JOURNAL OF CRYSTAL GROWTH
    37. Bies, WE; Radtke, RJ; Ehrenreich, H
      Induced electric fields in anisotropic thermoelectric materials

      JOURNAL OF APPLIED PHYSICS
    38. Radtke, RJ; Ehrenreich, H; Grein, CH
      Multilayer thermoelectric refrigeration in Hg1-xCdxTe superlattices

      JOURNAL OF APPLIED PHYSICS
    39. Hospodkova, A; Hulicius, E; Oswald, J; Pangrac, J; Melichar, K; Simecek, T
      Strained InxGa1-xAs/GaAs multiple quantum wells grown by MOVPE

      CZECHOSLOVAK JOURNAL OF PHYSICS
    40. GOLDYS EM; ZUO HY; TANSLEY TL; PHILLIPS MR; CONTESSA CM
      BAND OFFSETS IN IN0.15GA0.85AS GAAS AND IN0.15GA0.85AS/AL0.15GA0.85ASSTUDIED BY PHOTOLUMINESCENCE AND CATHODOLUMINESCENCE/

      Superlattices and microstructures
    41. LUGAND C; BENYATTOU T; GUILLOT G; VENET T; GENDRY M; HOLLINGER G
      ELECTROABSORPTION MODULATOR USING A TYPE-II QUANTUM-WELL IN THE INXGA1-XAS INALAS/INP SYSTEM/

      Superlattices and microstructures
    42. TANG SP; WALLACE RM; SEABAUGH A; KINGSMITH D
      EVALUATING THE MINIMUM THICKNESS OF GATE OXIDE ON SILICON USING FIRST-PRINCIPLES METHOD

      Applied surface science
    43. SCHAFER J; RISTEIN J; MIYAZAKI S; LEY L
      FORMATION OF THE INTERFACE BETWEEN C-SI(111) AND DIAMOND-LIKE CARBON STUDIED WITH PHOTOELECTRON-SPECTROSCOPY

      Applied surface science
    44. RODRIGUEZHERNANDEZ P; GONZALEZDIAZ M; MUNOZ A
      FIRST PRINCIPLES CALCULATIONS OF THE BAND-OFFSET OF THE ZNSE BETE HETEROJUNCTIONS/

      Applied surface science
    45. GONZALEZDIAZ M; RODRIGUEZHERNANDEZ P; MUNOZ A
      THEORETICAL-STUDY OF THE ROLE OF NATURAL INTRALAYERS IN THE BAND OFFSETS OF INAS GASB HETEROJUNCTION/

      Applied surface science
    46. DIGASPARE L; CAPELLINI G; CIANCI E; EVANGELISTI F
      ELECTRONIC STATES OF THIN EPITAXIAL LAYERS OF GE ON SI(100)

      Applied surface science
    47. GAMEZCUATZIN H; DAAMI A; GARCHERY L; SAGNES I; CAMPIDELLI Y; BREMOND G
      SI SIGE VALENCE-BAND OFFSET DETERMINATION USING PHOTOLUMINESCENCE ANDDLTS IN SIGE QUANTUM-WELL MOS CAPACITORS/

      Microelectronic engineering
    48. MORENO M; YANG H; HORICKE M; ALONSO M; MARTINGAGO JA; HEY R; HORN K; SACEDON JL; PLOOG KH
      SI INTRALAYERS AT GAAS ALAS AND GAAS/GAAS JUNCTIONS - POLAR VERSUS NONPOLAR INTERFACES/

      Physical review. B, Condensed matter
    49. Lin, TY; Chen, HM; Tsai, MS; Chen, YF; Fang, FF; Lin, CF; Chi, GC
      Two-dimensional electron gas and persistent photoconductivity in AlxGa1-xN/GaN heterostructures

      PHYSICAL REVIEW B-CONDENSED MATTER
    50. Xue, JG; Ban, DY; Fang, RC; Lu, ED; Xu, PS
      Band lineup of SiOx/ZnS (111) heterojunction: a synchrotron radiation photoemission study

      THIN SOLID FILMS
    51. LAMBRECHT WRL; PETUKHOV AG; HEMMELMAN BT
      SCHOTTKY-BARRIER FORMATION AT ERAS GAAS INTERFACES - A CASE OF FERMI-LEVEL PINNING BY SURFACE-STATES/

      Solid state communications
    52. MORAN M; DAWSON P; MOORE KJ
      THE NATURE OF THE LIGHT-HOLE POTENTIAL PROFILE IN GAAS-INGAAS DOUBLE-QUANTUM-WELL STRUCTURES

      Solid state communications
    53. MONIER C; VILELA MF; SERDIUKOVA I; FREUNDLICH A
      PHOTOCURRENT AND PHOTOLUMINESCENCE SPECTROSCOPY OF INASXP1-X INP STRAINED QUANTUM-WELLS GROWN BY CHEMICAL BEAM EPITAXY/

      Journal of crystal growth
    54. NAGELSTRASSER M; DROGE H; FISCHER F; LITZ T; WAAG A; LANDWEHR G; STEINRUCK HP
      PHOTOELECTRON-SPECTROSCOPY OF MOLECULAR-BEAM EPITAXIALLY GROWN BETE ZNSE AND BETE/GAAS HETEROSTRUCTURES/

      Journal of crystal growth
    55. GRIFFIN IJ; KLAR PJ; WOLVERSON D; DAVIES JJ; LUNN B; ASHENFORD DE; HENNING T
      MAGNETOPHOTOLUMINESCENCE STUDIES OF ZN1-XMNXTE ZNTE MULTIPLE-QUANTUM-WELL AND QUANTUM-DOT STRUCTURES/

      Journal of crystal growth
    56. GUENAUD C; DELEPORTE E; FILORAMO A; LELONG P; DELALANDE C; MORHAIN C; TOURNIE E; FAURIE JP
      BAND-OFFSET DETERMINATION OF THE ZN1-XCDXSE ZNSE INTERFACE/

      Journal of crystal growth
    57. Klipstein, PC; Lyapin, SG; Mason, NJ; Walker, PJ
      In situ characterisation of MOVPE by surface photoabsorption II. Interfacemonitoring

      JOURNAL OF CRYSTAL GROWTH
    58. MOON CR; CHOE BD; KWON SD; SHIN HK; LIM H
      ELECTRON-DISTRIBUTION AND CAPACITANCE-VOLTAGE CHARACTERISTICS OF N-DOPED QUANTUM-WELLS

      Journal of applied physics
    59. VIGNAUD D; WALLART X; MOLLOT F; SERMAGE B
      PHOTOLUMINESCENCE STUDY OF THE INTERFACE IN TYPE-II INALAS-INP HETEROSTRUCTURES

      Journal of applied physics
    60. YOON IT; OH SJ; PARK HL
      AMPHOTERIC BEHAVIOR OF SN IN IN0.5GA0.5P LAYERS GROWN BY LIQUID-PHASEEPITAXY

      Journal of applied physics
    61. VIGNAUD D; WALLART X; MOLLOT F
      DIRECT AND INVERSE EQUIVALENT INALAS-INP INTERFACES GROWN BY GAS-SOURCE MOLECULAR-BEAM EPITAXY

      Applied physics letters
    62. ANAN T; NISHI K; TOMITA A; TOKUTOME K; SUGOU S
      CONDUCTION-BAND DISCONTINUITY OF INASP INP HETEROJUNCTION/

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
    63. VANELLE E; MESRINE M; GRANDJEAN N; DEPARIS C; MASSIES J
      INTERFACE EFFECTS ON THE PHOTOLUMINESCENCE OF GAAS GAINP QUANTUM-WELLS/

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
    64. HAGSTON WE; STIRNER T; HARRISON P
      EFFECTS OF INTERFACE IMPERFECTIONS ON THE ZEEMAN SPLITTING OF EXCITONS IN DILUTED MAGNETIC SEMICONDUCTOR QUANTUM-WELLS

      Philosophical magazine. B. Physics of condensed matter. Statistical mechanics, electronic, optical and magnetic
    65. OHLER C; DANIELS C; FORSTER A; LUTH H
      BARRIER HEIGHT AT CLEAN AU INAS(100) INTERFACES/

      Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena
    66. ARRIAGA J; VELASCO VR
      ELECTRONIC-PROPERTIES OF GAAS-ALAS FIBONACCI SUPERLATTICES

      Journal of physics. Condensed matter
    67. SINH ND; SPIESS F; KLIEFOTH K
      VOLTAGE AND CURRENT LOSS IN SEMICONDUCTOR SOLAR-CELLS FROM MCV AND SIMULTANEOUS IV MEASUREMENTS

      Solar energy materials and solar cells
    68. SCHAFER J; RISTEIN J; LEY L
      ELECTRONIC AND STRUCTURAL-PROPERTIES OF THE INTERFACE BETWEEN C-SI(111) AND DIAMOND-LIKE CARBON

      DIAMOND AND RELATED MATERIALS
    69. LEYMARIE J; DISSEIX P; REZKI M; MONIER C; VASSON A; VASSON AM
      CONDUCTION-BAND OFFSET RATIO OF THE (IN,GA)AS GAAS SYSTEM AND (IN,GA)AS ALLOY PROPERTIES/

      Materials science & engineering. B, Solid-state materials for advanced technology
    70. KUO HC; KUO JM; WANG YC; LIN CH; CHEN H; STILLMAN GE
      DETERMINATION OF THE BAND-OFFSET OF GAINP-GAAS AND ALINP-GAAS QUANTUM-WELLS BY OPTICAL SPECTROSCOPY

      Journal of electronic materials
    71. GUILLOT C; DUGAY M; BARBARIN F; SOULIERE V; ABRAHAM P; MONTEIL Y
      ACCURATE DETERMINATION OF THE BAND-OFFSET OF A QUANTUM SEMICONDUCTOR STRUCTURE FROM ITS CAPACITANCE-VOLTAGE PROFILE - APPLICATION TO AN INPGA0.47IN0.53AS/INP SINGLE-QUANTUM-WELL/

      Journal of electronic materials
    72. KREBS O; SEIDEL W; ANDRE JP; BERTHO D; JOUANIN C; VOISIN P
      INVESTIGATIONS OF GIANT FORBIDDEN OPTICAL ANISOTROPY IN GAINAS-INP QUANTUM-WELL STRUCTURES

      Semiconductor science and technology
    73. FORNARI M; CHEN HH; FU L; GRAFT RD; LOHRMANN DJ; MORONI S; PARRAVICINI GP
      ELECTRONIC-STRUCTURE AND WAVE-FUNCTIONS OF INTERFACE STATES IN HGTE-CDTE QUANTUM-WELLS AND SUPERLATTICES

      Physical review. B, Condensed matter
    74. NARAYANAMURTI V
      BALLISTIC-ELECTRON-EMISSION MICROSCOPY (BEEM) AND SPECTROSCOPY OF BURIED SEMICONDUCTOR HETEROSTRUCTURES AND QUANTUM DOTS

      Science Reports of the Research Institutes, Tohoku University, Series A: Physics, Chemistry, and Metallurgy
    75. GAMEZCUATZIN H; MARCHAND JJ; BREMOND G; GARCHERY L; CAMPIDELLI Y; BERENGUER M
      THERMAL EMISSION OF HOLES FROM CONFINED LEVELS IN STRAINED SIGE CHANNEL P-MOSFETS

      Thin solid films
    76. LONG F; HAGSTON WE; HARRISON P; STIMER T
      THE STRUCTURAL DEPENDENCE OF THE EFFECTIVE-MASS AND LUTTINGER PARAMETERS IN SEMICONDUCTOR QUANTUM-WELLS

      Journal of applied physics
    77. CHOR EF; PENG CJ
      HETEROJUNCTION BIPOLAR-TRANSISTOR WITH AN ADDITIONAL MINORITY-CARRIERREFLECTION BARRIER IN THE EMITTER

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
    78. ZHENG JC; ZHENG YM; WANG RZ
      VALENCE OFFSETS OF TERNARY ALLOY HETEROJUNCTIONS INXGA1-XAS INXAL1-XAS/

      Chinese Science Bulletin
    79. OH JH; CHANG KJ; IHM G
      ELECTRONIC-STRUCTURE OF IN1-XGAXAS GAAS STRAINED QUANTUM-WELLS WITH ADELTA-DOPED LAYER/

      Journal of physics. Condensed matter
    80. WOLFFRAMM D; BAILEY P; EVANS DA; NEUHOLD G; HORN K
      ZINC-SULFIDE ON GAP(110) - CHARACTERIZATION OF EPITAXIAL-GROWTH AND ELECTRONIC-STRUCTURE

      Journal of vacuum science & technology. A. Vacuum, surfaces, and films
    81. IWATA K; ASAHI H; OGURA T; SUMINO J; GONDA S; OHKI A; KAWAGUCHI Y; MATSUOKA T
      LOW-TEMPERATURE-GROWN BE-DOPED INALP BAND-OFFSET REDUCTION LAYER TO P-TYPE ZNSE

      Journal of electronic materials
    82. SIZMANN R; HELGESEN P; COLIN T; SKAULI T; LOVOLD S
      INTERBAND MAGNETOABSORPTION IN NARROW-GAP HGTE CDTE SUPERLATTICE STRUCTURES/

      Journal of electronic materials
    83. CHI WS; LIN DY; HUANG YS; QIANG H; POLLAK FH; MATHINE DL; MARACAS GN
      TEMPERATURE-DEPENDENCE OF QUANTIZED STATES IN AN INGAAS GAAS STRAINEDASYMMETRIC TRIANGULAR QUANTUM-WELL/

      Semiconductor science and technology
    84. SCHMALZ K; YASSIEVICH IN; COLLART EJ; GRAVESTEIJN DJ
      DEEP-LEVEL TRANSIENT SPECTROSCOPY STUDY OF NARROW SIGE QUANTUM-WELLS WITH HIGH GE CONTENT

      Physical review. B, Condensed matter
    85. LI GH; GONI AR; SYASSEN K; HOU HQ; FENG W; ZHOU JM
      HIGH-PRESSURE STUDY OF OPTICAL-TRANSITIONS IN STRAINED IN0.2GA0.8AS GAAS MULTIPLE-QUANTUM WELLS/

      Physical review. B, Condensed matter
    86. MIAO J; HAGSTON WE; STIRNER T
      SPONTANEOUS SYMMETRY-BREAKING OF EXCITON MAGNETIC POLARONS IN CDTE CD1-XMNXTE QUANTUM-WELLS/

      Physical review. B, Condensed matter
    87. BARDI J; BINGGELI N; BALDERESCHI A
      PRESSURE AND ALLOY-COMPOSITION DEPENDENCE OF AL GA1-XALXAS(100) SCHOTTKY BARRIERS/

      Physical review. B, Condensed matter
    88. FLATTE ME; YOUNG PM; PENG LH; EHRENREICH H
      GENERALIZED SUPERLATTICE K-CENTER-DOT-P THEORY AND INTERSUBBAND OPTICAL-TRANSITIONS

      Physical review. B, Condensed matter
    89. NAKAYAMA T
      ELECTRONIC AND OPTICAL-PROPERTIES OF ALKALI-HALIDES KBR RBCL SUPERLATTICES/

      Journal of the Physical Society of Japan
    90. BROUNKOV PN; BENYATTOU T; GUILLOT G
      SIMULATION OF THE CAPACITANCE-VOLTAGE CHARACTERISTICS OF A SINGLE-QUANTUM-WELL STRUCTURE-BASED ON THE SELF-CONSISTENT SOLUTION OF THE SCHRODINGER AND POISSON EQUATIONS

      Journal of applied physics
    91. QIU Y; OSINSKY A; ELEMAWY AA; LITTLEFIELD E; TEMKIN H; FALEEV N
      GROWTH MODES OF ZNSE ON GAAS

      Journal of applied physics
    92. BARNES J; NELSON J; BARNHAM KWJ; ROBERTS JS; PATE MA; GREY R; DOSANJH SS; MAZZER M; GHIRALDO F
      CHARACTERIZATION OF GAAS INGAAS QUANTUM-WELLS USING PHOTOCURRENT SPECTROSCOPY/

      Journal of applied physics
    93. MARTINEZPASTOR J; GONZALEZ L; ROUSSIGNOL P
      OPTICAL STUDY OF GOOD QUALITY INGAP GAAS QUANTUM-WELLS - INFLUENCE OFTHE INDIUM CONTENT AROUND THE LATTICE-MATCHED COMPOSITION/

      Applied physics letters
    94. NEUHOLD G; HORN K; MAGNUSSON KO; EVANS DA
      ZINCBLENDE-CDSE ON GASB(110) - CHARACTERIZATION OF EPITAXIAL-GROWTH AND ELECTRONIC-STRUCTURE

      Journal of vacuum science & technology. A. Vacuum, surfaces, and films
    95. LINK P; GROBBEL G; WORZ M; BAUER S; BERGER H; GEBHARDT W; PAGGEL JJ; HORN K
      PHOTOELECTRON-SPECTROSCOPY FROM ATOMIC LAYER EPITAXIALLY GROWN ZNTE ZNSE HETEROSTRUCTURES

      Journal of vacuum science & technology. A. Vacuum, surfaces, and films
    96. HUANG YS; CHI WS; QIANG H; POLLAK FH; MATHINE DL; MARACAS GN
      MODULATION SPECTROSCOPY STUDY OF AN INGAAS GAAS-STRAINED ASYMMETRIC TRIANGULAR QUANTUM-WELL HETEROSTRUCTURE/

      Nuovo cimento della Societa italiana di fisica. D, Condensed matter,atomic, molecular and chemical physics, biophysics
    97. KRISHNAMURTHY S; CHEN AB; SHER A; VANSCHILFGAARDE M
      TEMPERATURE-DEPENDENCE OF BAND-GAPS IN HGCDTE AND OTHER SEMICONDUCTORS

      Journal of electronic materials
    98. WEILER MH; REINE MB
      EFFECT OF A VALENCE-BAND BARRIER ON THE QUANTUM EFFICIENCY AND BACKGROUND-LIMITED DYNAMIC RESISTANCE OF COMPOSITIONALLY GRADED HGCDTE P-ON-N HETEROJUNCTION PHOTODIODES

      Journal of electronic materials
    99. PETER M; FORKER J; WINKLER K; BACHEM KH; WAGNER J
      A NOVEL PSEUDOMORPHIC (GAAS1-XSBX-INYGA1-YAS) GAAS BILAYER-QUANTUM-WELL STRUCTURE LATTICE-MATCHED TO GAAS FOR LONG-WAVELENGTH OPTOELECTRONICS/

      Journal of electronic materials
    100. PARK SH; MARKARIAN M; YU PKL; ASBECK PM
      CONDUCTION-BAND OFFSET OF STRAINED INGAP BY QUANTUM-WELL CAPACITANCE-VOLTAGE PROFILING

      Journal of electronic materials


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Documento generato il 31/05/20 alle ore 01:01:07