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La ricerca find articoli where soggetti phrase all words 'Auger recombination' sort by level,fasc_key/DESCEND, pagina_ini_num/ASCEND ha restituito 126 riferimenti
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    1. Murdin, BN
      Key issues for mid-infrared emission

      PHILOSOPHICAL TRANSACTIONS OF THE ROYAL SOCIETY OF LONDON SERIES A-MATHEMATICAL PHYSICAL AND ENGINEERING SCIENCES
    2. Krier, A
      Physics and technology of mid-infrared light emitting diodes

      PHILOSOPHICAL TRANSACTIONS OF THE ROYAL SOCIETY OF LONDON SERIES A-MATHEMATICAL PHYSICAL AND ENGINEERING SCIENCES
    3. Selmic, SR; Chou, TM; Sih, JP; Kirk, JB; Mantie, A; Butler, JK; Bour, D; Evans, GA
      Design and characterization of 1.3-mu m AlGaInAs-InP multiple-quantum-welllasers

      IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS
    4. Altermatt, PP; Sinton, RA; Heiser, G
      Improvements in numerical modelling of highly injected crystalline siliconsolar cells

      SOLAR ENERGY MATERIALS AND SOLAR CELLS
    5. Higashi, T; Yamamoto, T; Ishikawa, T; Fujii, T; Soda, H; Yamada, M
      Temperature dependence of gain characteristics in 1.3-mu m AlGaInAs/InP strained multiple-quantum-well semiconductor lasers

      IEICE TRANSACTIONS ON ELECTRONICS
    6. Higashi, T; Yamamoto, T; Ishikawa, T; Fujii, T; Soda, H; Yamada, M
      Temperature dependence of gain characteristics in 1.3-mu m AlGaInAs/InP strained multiple-quantum-well semiconductor lasers

      IEICE TRANSACTIONS ON COMMUNICATIONS
    7. Burov, LI; Gribkovskii, VP; Grigelevich, PS; Kramar, MI; Ryabtsev, GI; Shore, KA; Voitikov, SV; Kragler, R
      Theoretical analysis of the effect of amplified luminescence on the modulation response of laser diodes

      INTERNATIONAL JOURNAL OF NUMERICAL MODELLING-ELECTRONIC NETWORKS DEVICES AND FIELDS
    8. Hillkirk, LM; Breitholtz, B; Domeij, M
      Space and time resolved surface temperature distributions in Si power diodes operating under self-heating conditions

      SOLID-STATE ELECTRONICS
    9. Mal'shukov, AG; Chao, KA
      Opto-thermionic refrigeration in semiconductor heterostructures

      PHYSICAL REVIEW LETTERS
    10. Dogonkin, EB; Zegrya, GG
      New mechanism of current-induced cooling of quantum systems

      JETP LETTERS
    11. Di Francia, G; La Ferrara, V; Morvillo, P; Lettieri, S; Maddalena, P
      Self-assembly of photoluminescent silicon films: Influence of doping on the physical properties

      APPLIED PHYSICS LETTERS
    12. Oka, T; Ouchi, K; Mochizuki, K
      Characterization of InGaP/GaAs heterojunction bipolar transistors with a heavily doped base

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
    13. Kitchin, MR; Shaw, MJ; Corbin, E; Hagon, JP; Jaros, M
      Optical properties of imperfect strained-layer InAs/Ga1-xInxSb/AlSb superlattices with infrared applications

      PHYSICAL REVIEW B
    14. Kharazhanov, SZ
      Temperature and doping level dependence of solar cell performance including excitons

      SOLAR ENERGY MATERIALS AND SOLAR CELLS
    15. Kalem, S; Curtis, A; Hartmann, Q; Moser, B; Stillman, G
      Sub-gap excited photoluminescence in III-V compound semiconductor heterostructures

      PHYSICA STATUS SOLIDI B-BASIC RESEARCH
    16. Asryan, LV; Gun'ko, NA; Polkovnikov, AS; Zegrya, GG; Suris, RA; Lau, PK; Makino, T
      Threshold characteristics of InGaAsP/InP multiple quantum well lasers

      SEMICONDUCTOR SCIENCE AND TECHNOLOGY
    17. Kitchin, MR; Shaw, MJ; Corbin, E; Hagon, JP; Jaros, M
      Absorption and emission spectra of InAs/Ga1-xInxSb/AlSb nanostructures forinfrared applications

      APPLIED SURFACE SCIENCE
    18. Findlay, PC; Wells, JPR; Bradley, IV; Crowder, JG; Pidgeon, CR; Murdin, BN; Yang, MJ; Vurgaftman, I; Meyer, JR
      Suppression of Anger recombination in long-wavelength quantum well W-structure lasers

      PHYSICAL REVIEW B
    19. Nishino, H; Ozaki, K; Tanaka, M; Saito, T; Ebe, H; Miyamoto, Y
      Acceptor level related Shockley-Read-Hall centres in p-HgCdTe

      JOURNAL OF CRYSTAL GROWTH
    20. Surkova, TP; Kaczor, P; Zakrzewski, AJ; Swiatek, K; Ivanov, VY; Godlewski, M; Polimeni, A; Eaves, L; Giriat, W
      Optical properties of ZnSe, ZnCdSe and ZnSSe alloys doped with iron

      JOURNAL OF CRYSTAL GROWTH
    21. Stollwerck, G; Sulima, OV; Bett, AW
      Characterization and simulation of GaSb device-related properties

      IEEE TRANSACTIONS ON ELECTRON DEVICES
    22. Piprek, J; Abraham, P; Bowers, JE
      Self-consistent analysis of high-temperature effects on strained-layer multiquantum-well InGaAsP-InP lasers

      IEEE JOURNAL OF QUANTUM ELECTRONICS
    23. Pikal, JM; Menoni, CS; Thiagarajan, P; Robinson, GY; Temkin, H
      Temperature dependence of intrinsic recombination coefficients in 1.3 mu mInAsP/InP quantum-well semiconductor lasers

      APPLIED PHYSICS LETTERS
    24. Pidgeon, CR
      Free electron laser study of the suppression of non-radiative scattering processes in semiconductors

      INFRARED PHYSICS & TECHNOLOGY
    25. Freire, MM; da Silva, HJA
      Estimation of multiple-quantum well laser parameters for simulation of dispersion supported transmission systems at 20 Gbit/s

      IEE PROCEEDINGS-OPTOELECTRONICS
    26. Phillips, AF; Sweeney, SJ; Adams, AR; Thijs, PJA
      The temperature dependence of 1.3-and 1.5-mu m compressively strained InGaAs(P) MQW semiconductor lasers

      IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS
    27. Higashi, T; Sweeney, SJ; Phillips, AF; Adams, AR; O'Reilly, EP; Uchida, T; Fujii, T
      Experimental analysis of temperature dependence in 1.3-mu m AlGaInAs-InP strained MQW lasers

      IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS
    28. Pikal, JM; Menoni, CS; Temkin, H; Thiagarajan, P; Robinson, GY
      Carrier lifetime and recombination in long-wavelength quantum-well lasers

      IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS
    29. Sweeney, SJ; Adams, AR; Silver, M; O'Reilly, EP; Watling, JR; Walker, AB; Thijs, PJA
      Dependence of threshold current on QW position and on pressure in 1.5 mu mInGaAs(P) lasers

      PHYSICA STATUS SOLIDI B-BASIC RESEARCH
    30. Rogalski, A; Ciupa, R
      Performance limitation of short wavelength infrared InGaAs and HgCdTe photodiodes

      JOURNAL OF ELECTRONIC MATERIALS
    31. Mackowiak, P; Nakwaski, W
      Thermal aspects of designing CW-operated nitride VCSELs

      OPTICAL AND QUANTUM ELECTRONICS
    32. Jursenas, S; Tamulaitis, G; Kurilcik, G; Zukauskas, A
      Nonradiative capture of hot photoelectrons by multiphonon emission in highly excited polar semiconductors

      PHYSICA SCRIPTA
    33. Gonul, B
      The analysis of the variation of the threshold current with pressure in semiconductor quantum well lasers

      SEMICONDUCTOR SCIENCE AND TECHNOLOGY
    34. Hohng, SC; Khang, DW; Ahn, YH; Lee, JY; Kihm, SY; Kim, DH; Kim, WS; Woo, JC; Kim, DS; Citrin, DS; Woo, DH; Kim, EK; Kim, SH; Lim, KS
      Two-color picosecond and continuous-wave experiments on anti-Stokes and Stokes carrier-transfer phenomena in GaAslAl(x)Ga(1-x)As and InGaP2/AlxGa1-xAs heterostructures

      PHYSICAL REVIEW B-CONDENSED MATTER
    35. Flatte, ME; Grein, CH; Hasenberg, TC; Anson, SA; Jang, DJ; Olesberg, JT; Boggess, TF
      Carrier recombination rates in narrow-gap InAs/Ga1-xInxSb-based superlattices

      PHYSICAL REVIEW B-CONDENSED MATTER
    36. Kita, T; Nishino, T; Geng, C; Scholz, F; Schweizer, H
      Dynamic process of anti-Stokes photoluminescence at a long-range-ordered Ga0.5In0.5P/GaAs heterointerface

      PHYSICAL REVIEW B-CONDENSED MATTER
    37. Yoon, SF; Kam, AHT; Gay, BP; Zheng, HQ; Ng, GI
      Study of In0.48Ga0.52P/In0.2Ga0.8As/GaAs pseudomorphic high electron mobility transistor using a two-dimensional device simulator

      MICROELECTRONICS JOURNAL
    38. Bleuse, J; Bonnet-Gamard, J; Mula, G; Magnea, N; Pautrat, JL
      Laser emission in HgCdTe in the 2-3.5 mu m range

      JOURNAL OF CRYSTAL GROWTH
    39. Guclu, AD; Rejeb, C; Maciejko, R; Morris, D; Champagne, A
      Photoluminescence study of carrier dynamics and recombination in a strained InGaAsP/InP multiple-quantum-well structure

      JOURNAL OF APPLIED PHYSICS
    40. Gilard, O; Lozes-Dupuy, F; Vassilieff, G; Bonnefont, S; Arguel, P; Barrau, J; Le Jeune, P
      Strain optimization for high differential gain and low current operation in 1.55 mu m InGaAs/InGaAsP quantum well lasers

      JOURNAL OF APPLIED PHYSICS
    41. Glunz, SW; Biro, D; Rein, S; Warta, W
      Field-effect passivation of the SiO2-Si interface

      JOURNAL OF APPLIED PHYSICS
    42. Charache, GW; Baldasaro, PF; Danielson, LR; DePoy, DM; Freeman, MJ; Wang, CA; Choi, HK; Garbuzov, DZ; Martinelli, RU; Khalfin, V; Saroop, S; Borrego, JM; Gutmann, RJ
      InGaAsSb thermophotovoltaic diode: Physics evaluation

      JOURNAL OF APPLIED PHYSICS
    43. Schmidt, J
      Measurement of differential and actual recombination parameters on crystalline silicon wafers

      IEEE TRANSACTIONS ON ELECTRON DEVICES
    44. Yoshida, Y; Watanabe, H; Shibata, K; Takemoto, A; Higuchi, H
      Theoretical and experimental analysis of leakage current in InGaAsPBH lasers with p-n-p-n current blocking layers

      IEEE JOURNAL OF QUANTUM ELECTRONICS
    45. Minch, J; Park, SH; Keating, T; Chuang, SL
      Theory and experiment of In1-xGaxAsyP1-y and In1-x-yGaxAlyAs long-wavelength strained quantum-well lasers

      IEEE JOURNAL OF QUANTUM ELECTRONICS
    46. Reale, A; Di Carlo, A; Lugli, P; Campi, D; Cacciatore, A; Stano, A; Fornuto, G
      Study of gain compression mechanisms in multiple-quantum-well In1-xGaxAs semiconductor optical amplifiers

      IEEE JOURNAL OF QUANTUM ELECTRONICS
    47. Hohng, SC; Kim, DS
      Two-color picosecond experiments on anti-Stokes photoluminescence in GaAs/AlGaAs asymmetric double quantum wells

      APPLIED PHYSICS LETTERS
    48. Andreev, AD; Donetsky, DV
      Analysis of temperature dependence of the threshold current in 2.3-2.6 mu m InGaAsSb/AlGaAsSb quantum-well lasers

      APPLIED PHYSICS LETTERS
    49. Asakawa, Y; Kawai, R; Ohki, K; Otsuka, K
      Laser-diode-pumped microchip LiNdP4O12 lasers under different pump-beam focusing conditions

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS
    50. BHATTACHARYA P; YUAN Y; BROCK T; CANEAU C; BHAT R
      TEMPERATURE-DEPENDENCE OF THE THRESHOLD CURRENT IN 1.55-MU-M STRAIN-COMPENSATED MULTI-QUANTUM-WELL DISTRIBUTED-FEEDBACK LASERS

      IEEE photonics technology letters
    51. KRISHNAMURTHY S; CHEN AB; SHER A
      FULL BAND-STRUCTURE CALCULATION OF MINORITY-CARRIER LIFETIMES IN HGCDTE AND THALLIUM-BASED ALLOYS

      Journal of electronic materials
    52. Das, MK; Chickerur, NS
      Fabrication of polycrystalline silicon solar cells showing high efficiency

      BULLETIN OF MATERIALS SCIENCE
    53. Jursenas, S; Kurilcik, G; Zukauskas, A
      Dense electron-hole plasma cooling due to second nonequilibrium-phonon bottleneck in CdS crystallites

      PHYSICAL REVIEW B-CONDENSED MATTER
    54. Adams, AR; Silver, M; Allam, J
      Semiconductor optoelectronic devices

      HIGH PRESSURE IN SEMICONDUCTOR PHYSICS II
    55. BERISHEV IE; GORBATCHEV AY; DELCASTILLO ICH; ORTIZ MI; RODRIGUEZPEDROZA G; MISHOURNYI VA
      PREPARATION AND ANALYSIS OF LASER HETEROS TRUCTURES IN INGAASP GAAS AND INGAASP/INP WITH WAVE EMISSION BETWEEN 0.8 AND 1.3 MICROMETERS/

      Revista Mexicana de Fisica
    56. ROBERTI TW; CHEREPY NJ; ZHANG JZ
      NATURE OF THE POWER-DEPENDENT ULTRAFAST RELAXATION PROCESS OF PHOTOEXCITED CHARGE-CARRIERS IN II-VI SEMICONDUCTOR QUANTUM DOTS - EFFECTS OFPARTICLE-SIZE, SURFACE, AND ELECTRONIC-STRUCTURE

      The Journal of chemical physics
    57. LAU PK; MAKINO T
      EFFECTS OF P-DOPING AND NONRADIATIVE PROCESSES ON THE CURRENT-VOLTAGECHARACTERISTICS OF LONG-WAVELENGTH QUANTUM-WELL LASER-DIODES

      Journal of applied physics
    58. LINNROS J
      CARRIER LIFETIME MEASUREMENTS USING FREE-CARRIER ABSORPTION TRANSIENTS - I - PRINCIPLE AND INJECTION DEPENDENCE

      Journal of applied physics
    59. GUNKO NA; KHALFIN VB; SOKOLOVA ZN; ZEGRYA GG
      OPTICAL LOSS IN INAS-BASED LONG-WAVELENGTH LASERS

      Journal of applied physics
    60. LAU PK; MAKINO T
      CURRENT-VOLTAGE CHARACTERISTICS OF LONG-WAVELENGTH QUANTUM-WELL LASER-DIODES

      Journal of applied physics
    61. Gfroerer, TH; Cornell, EA; Wanlass, MW
      Efficient directional spontaneous emission from an InGaAs/InP heterostructure with an integral parabolic reflector

      JOURNAL OF APPLIED PHYSICS
    62. KIM TG; PARK KH; HWANG SM; KIM Y; KIM EK; MIN SK; LEEM SJ; JEON JI; PARK JH; CHANG WSC
      PERFORMANCE OF GAAS-ALGAAS V-GROOVED INNER STRIPE QUANTUM-WELL WIRE LASERS WITH DIFFERENT CURRENT BLOCKING CONFIGURATIONS

      IEEE journal of quantum electronics
    63. YOSHIDA Y; WATANABE H; SHIBATA K; TAKEMOTO A; HIGUCHI H
      ANALYSIS OF CHARACTERISTIC TEMPERATURE FOR INGAASP BH LASER WITH P-N-P-N BLOCKING LAYERS USING 2-DIMENSIONAL DEVICE SIMULATOR

      IEEE journal of quantum electronics
    64. JONES G; SMITH AD; OREILLY EP; SILVER M; BRIGGS ATR; FICE MJ; ADAMS AR; GREENE PD; SCARROTT K; VRANIC A
      THE INFLUENCE OF TENSILE STRAIN ON DIFFERENTIAL GAIN AND AUGER RECOMBINATION IN 1.5-MU-M MULTIPLE-QUANTUM-WELL LASERS

      IEEE journal of quantum electronics
    65. COOLEY WT; HENGEHOLD RL; YEO YK; TURNER GW; LOEHR JP
      RECOMBINATION DYNAMICS IN INASSB QUANTUM-WELL DIODE-LASERS MEASURED USING PHOTOLUMINESCENCE UP-CONVERSION

      Applied physics letters
    66. SCHMIDT J; BERGE C; ABERLE AG
      INJECTION LEVEL DEPENDENCE OF THE DEFECT-RELATED CARRIER LIFETIME IN LIGHT-DEGRADED BORON-DOPED CZOCHRALSKI SILICON

      Applied physics letters
    67. HIDAKA W; SUSAKI W
      MEASUREMENT OF RECOMBINATION COEFFICIENTS OF BOTH 1.3-MU-M AND 1.5-MU-M INGAASP LASER-DIODES

      Electronics & communications in Japan. Part 2, Electronics
    68. KURAKAKE H; UCHIDA T; YAMAMOTO T; HIGASHI T; OGITA S; KOBAYASHI M
      EFFECT OF RECOMBINATION IN SEPARATE-CONFINEMENT HETEROSTRUCTURE (SCH)LAYERS ON TEMPERATURE CHARACTERISTICS OF SEMICONDUCTOR-LASERS

      IEEE journal of selected topics in quantum electronics
    69. DMITRIEV AV; EVLYUKHIN AB
      THRESHOLD AND PROBABILITY OF IMPACT IONIZATION BY ELECTRONS IN NARROW-GAP P-TYPE SEMICONDUCTORS WITH HIGHLY DEGENERATE HOLES

      Physics of the solid state
    70. HUANG R; SIMMONS JG; JESSOP PE; EVANS J
      A RELATIONSHIP FOR TEMPERATURE-DEPENDENCE OF THRESHOLD CURRENT FOR 1.3-MU-M COMPRESSIVELY STRAINED-LAYER MULTIPLE-QUANTUM-WELL LASERS

      IEEE photonics technology letters
    71. DMITRIEV AV; EVLYUKHIN AB
      ELECTRON-IMPACT IONIZATION IN P-TYPE DEGENERATE NARROW-GAP SEMICONDUCTORS WITH A KANE BAND DISPERSION LAW

      Semiconductor science and technology
    72. CHO YH; KIM DS; CHOE BD; LIM H; LEE JI; KIM D
      DYNAMICS OF ANTI-STOKES PHOTOLUMINESCENCE IN TYPE-II ALXGA1-XAS-GAINP2 HETEROSTRUCTURES - THE IMPORTANT ROLE OF LONG-LIVED CARRIERS NEAR THE INTERFACE

      Physical review. B, Condensed matter
    73. EFROS AL; ROSEN M; AVERBOUKH B; KOVALEV D; BENCHORIN M; KOCH F
      NONLINEAR-OPTICAL EFFECTS IN POROUS SILICON - PHOTOLUMINESCENCE SATURATION AND OPTICALLY INDUCED POLARIZATION ANISOTROPY

      Physical review. B, Condensed matter
    74. DEKEL E; EHRENFREUND E; GERSHONI D; BOUCAUD P; SAGNES I; CAMPIDELLI Y
      RECOMBINATION PROCESSES IN SIGE SI QUANTUM-WELLS MEASURED BY PHOTOINDUCED ABSORPTION-SPECTROSCOPY/

      Physical review. B, Condensed matter
    75. AI XC; JIN R; GE CB; WANG JJ; ZOU YH; ZHOU XW; XIAO XR
      FEMTOSECOND INVESTIGATION OF CHARGE-CARRIER DYNAMICS IN CDSE NANOCLUSTER FILMS

      The Journal of chemical physics
    76. SCHMIDT J; ABERLE AG
      ACCURATE METHOD FOR THE DETERMINATION OF BULK MINORITY-CARRIER LIFETIMES OF MONOCRYSTALLINE AND MULTICRYSTALLINE SILICON-WAFERS

      Journal of applied physics
    77. SILVER M; OREILLY EP; ADAMS AR
      DETERMINATION OF THE WAVELENGTH DEPENDENCE OF AUGER RECOMBINATION IN LONG-WAVELENGTH QUANTUM-WELL SEMICONDUCTOR-LASERS USING HYDROSTATIC-PRESSURE

      IEEE journal of quantum electronics
    78. LU H; BLAAUW C; MAKINO T
      SINGLE-MODE OPERATION OVER A WIDE TEMPERATURE-RANGE IN 1.3 MU-M INGAASP INP DISTRIBUTED-FEEDBACK LASERS/

      Journal of lightwave technology
    79. OREILLY EP; JONES G; SILVER M; ADAMS AR
      DETERMINATION OF GAIN AND LOSS MECHANISMS IN SEMICONDUCTOR-LASERS USING PRESSURE TECHNIQUES

      Physica status solidi. b, Basic research
    80. ADAMS AR; SILVER M; OREILLY EP; GONUL B; PHILLIPS AF; SWEENEY SJ; THIJS PJA
      HYDROSTATIC-PRESSURE DEPENDENCE OF THE THRESHOLD CURRENT IN 1.5 MU-M STRAINED-QUANTUM-WELL LASERS

      Physica status solidi. b, Basic research
    81. HAUG A
      ON THE TEMPERATURE-DEPENDENCE OF INGAASP SEMICONDUCTOR-LASERS

      Physica status solidi. b, Basic research
    82. GRIVICKAS V; NOREIKA D; LINNROS J; TELLEFSEN JA
      FOURIER TRANSIENT GRATING IN SEMICONDUCTORS WITH NONLINEAR CARRIER RECOMBINATION

      Semiconductor science and technology
    83. PALM J; GAN F; ZHENG B; MICHEL J; KIMERLING LC
      ELECTROLUMINESCENCE OF ERBIUM-DOPED SILICON

      Physical review. B, Condensed matter
    84. SU ZP; TEO KL; YU PY; UCHIDA K
      MECHANISMS OF PHOTOLUMINESCENCE UP-CONVERSION AT THE GAAS (ORDERED) GAINP2 INTERFACE/

      Solid state communications
    85. FLYTZANIS C; RICARD D; SCHANNEKLEIN MC
      THE ROLE OF PHOTODARKENING AND AUGER RECOMBINATION IN THE DYNAMICS OFTHE OPTICAL-RESPONSE FOR CD(S,SE) NANOPARTICLES

      Journal of luminescence
    86. SEKI S; OOHASHI H; SUGIURA H; HIRONO T; YOKOYAMA K
      STUDY ON THE DOMINANT MECHANISMS FOR THE TEMPERATURE SENSITIVITY OF THRESHOLD CURRENT IN 1.3-MU-M INP-BASED STRAINED-LAYER QUANTUM-WELL LASERS

      IEEE journal of quantum electronics
    87. MATHUR A; DAPKUS PD
      FABRICATION, CHARACTERIZATION AND ANALYSIS OF LOW-THRESHOLD CURRENT-DENSITY 1.55-MU-M-STRAINED QUANTUM-WELL LASERS

      IEEE journal of quantum electronics
    88. GONTIJO I; NEILSON DT; WALKER AC; KENNEDY GT; SIBBETT W
      NONLINEAR INGAAS-INGAASP SINGLE-QUANTUM-WELL ALL-OPTICAL SWITCH - THEORY AND EXPERIMENTS

      IEEE journal of quantum electronics
    89. HADJI E; BLEUSE J; MAGNEA N; PAUTRAT JL
      PHOTOPUMPED INFRARED VERTICAL-CAVITY SURFACE-EMITTING LASER

      Applied physics letters
    90. BULLER GS; FANCEY SJ; MASSA JS; WALKER AC; COVA S; LACAITA A
      TIME-RESOLVED PHOTOLUMINESCENCE MEASUREMENTS OF INGAAS INP MULTIPLE-QUANTUM-WELL STRUCTURES AT 1.3-MU-M WAVELENGTHS BY USE OF GERMANIUM SINGLE-PHOTON AVALANCHE PHOTODIODES/

      Applied optics
    91. TANAKA T; HARATA A; SAWADA T
      IMAGINGS OF PICOSECOND-PHOTOEXCITED CARRIERS AND ENHANCED AUGER RECOMBINATION RATE BY TRANSIENT REFLECTING GRATING MEASUREMENTS

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
    92. ZEGRYA GG; ANDREEV AD
      THEORY OF NONEQUILIBRIUM CARRIER RECOMBIN ATION IN TYPE-II HETEROSTRUCTURES

      Zhurnal eksperimental'noj i teoreticheskoj fiziki
    93. ACKERMAN DA; SHTENGEL GE; HYBERTSEN MS; MORTON PA; KAZARINOV RF; TANBUNEK T; LOGAN RA
      ANALYSIS OF GAIN IN DETERMINING T-0 IN 1.3 MU-M SEMICONDUCTOR-LASERS

      IEEE journal of selected topics in quantum electronics
    94. EVANS JD; SIMMONS JG; THOMPSON DA; PUETZ N; MAKINO T; CHIK G
      AN INVESTIGATION INTO THE TEMPERATURE SENSITIVITY OF STRAINED AND UNSTRAINED MULTIPLE-QUANTUM-WELL, LONG-WAVELENGTH LASERS - NEW INSIGHT AND METHODS OF CHARACTERIZATION

      IEEE journal of selected topics in quantum electronics
    95. GHANASSI M; PIVETEAU L; SAVIOT L; SCHANNEKLEIN MC; RICARD D; FLYTZANIS C
      ORIGIN OF THE RESONANT OPTICAL KERR NONLINEARITY IN CD(S,SE)-DOPED GLASSES AND RELATED TOPICS

      Applied physics. B, Lasers and optics
    96. HOLTZ PO; ZHAO QX; MONEMAR B; SUNDARAM M; MERZ JL; GOSSARD AC
      SHAKE-UP INTERSUBBAND TRANSITIONS OBSERVED IN GAAS AIGAAS QUANTUM-WELLS/

      Superlattices and microstructures
    97. DMITRIEV AV; MOCKER M
      RECOMBINATION AND IONIZATION IN NARROW-GAP SEMICONDUCTORS

      Physics reports
    98. THIJS PJA; TIEMEIJER LF; BINSMA JJM; VANDONGEN T
      STRAINED-LAYER INGAAS(P) QUANTUM-WELL SEMICONDUCTOR-LASERS AND SEMICONDUCTOR-LASER AMPLIFIERS

      Philips journal of research
    99. KULISH NR; KUNETS VP; LISITSA MP
      OPTICAL-PROPERTIES OF QUASI-ZERO-DIMENSIONAL CDSXSE1-X CRYSTALLITES GROWN IN A GLASS MATRIX

      Optical engineering
    100. CHEN WM; MONEMAR B; JANZEN E; FRENS AM; BENNEBROEK MT; SCHMIDT J
      DIRECT DETERMINATION OF THE ELECTRON-ELECTRON-HOLE AUGER THRESHOLD ENERGY IN SILICON - REPLY

      Physical review letters


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Documento generato il 25/10/20 alle ore 15:49:53