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La ricerca find articoli where soggetti phrase all words 'AMORPHOUS-SILICON FILMS' sort by level,fasc_key/DESCEND, pagina_ini_num/ASCEND ha restituito 63 riferimenti
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    1. Bianco, N; Manca, O; Naso, V
      Transient conductive-radiative numerical analysis of multilayer thin filmsheated by different laser pulses

      INTERNATIONAL JOURNAL OF THERMAL SCIENCES
    2. Lee, M; Moon, S; Hatano, M; Grigoropoulos, CP
      Ultra-large lateral grain growth by double laser recrystallization of a-Sifilms

      APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING
    3. Sato, H; Fukutani, K; Futako, W; Kamiya, T; Fortmann, CM; Shimizu, I
      High-quality narrow gap (similar to 1.52 eV) a-Si : H with improved stability fabricated by excited inert gas treatment

      SOLAR ENERGY MATERIALS AND SOLAR CELLS
    4. Esteve, J; Lousa, A; Martinez, E; Huck, H; Halac, EB; Reinoso, M
      Amorphous SixC1-x films: an example of materials presenting low indentation hardness and high wear resistance

      DIAMOND AND RELATED MATERIALS
    5. Lin, CW; Cheng, LJ; Lu, YL; Lee, YS; Cheng, HC
      High-performance low-temperature poly-Si TFTs crystallized by excimer laser irradiation with recessed-channel structure

      IEEE ELECTRON DEVICE LETTERS
    6. Reinoso, M; Brusa, RS; Somoza, A; Deng, W; Karwasz, GP; Zecca, A; Halac, EB; Huck, H
      Positron study of defects in a-SixCl-x films produced by ion beam deposition method

      APPLIED SURFACE SCIENCE
    7. Schropp, REI
      Status of Cat-CVD (Hot-Wire CVD) research in Europe

      THIN SOLID FILMS
    8. Nozaki, Y; Kitazoe, M; Horii, K; Umemoto, H; Masuda, A; Matsumura, H
      Identification and gas phase kinetics of radical species in Cat-CVD processes of SiH4

      THIN SOLID FILMS
    9. Hirata, GA; McKittrick, J; Trkula, M; Mourant, J; Mourant, J; Sze, R
      Laser melting of photoluminescent (Y0.92EU0.08)(2)O-3 films

      JOURNAL OF APPLIED PHYSICS
    10. He, LN; Hasegawa, S
      Thickness dependence of properties of plasma-deposited amorphous SiO2 films

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
    11. Kondilis, A
      Imperfections and optical absorption in glow-discharge a-Si : H films: A study in the visible and near-infrared region

      PHYSICAL REVIEW B
    12. Maemura, Y; Yamaguchi, T; Yang, SC; Fujiyama, H
      a-Si : H film deposition using same phase modulated scanning plasma method

      THIN SOLID FILMS
    13. Wu, M; Chen, Y; Pangal, K; Sturm, JC; Wagner, S
      High-performance polysilicon thin film transistors on steel substrates

      JOURNAL OF NON-CRYSTALLINE SOLIDS
    14. Schroder, B; Bauer, S
      Some indications of different film forming radicals in a-Si : H depositionby the glow discharge and thermocatalytic CVD processes

      JOURNAL OF NON-CRYSTALLINE SOLIDS
    15. Veneri, PD; Privato, C; Terzini, E
      Changes of hydrogen evolution thermodynamics induced by He and H-2 dilution in PECVD a-Si : H films: influence on thermal crystallization

      JOURNAL OF NON-CRYSTALLINE SOLIDS
    16. Nozaki, Y; Kongo, K; Miyazaki, T; Kitazoe, M; Horii, K; Umemoto, H; Masuda, A; Matsumura, H
      Identification of Si and SiH in catalytic chemical vapor deposition of SiH4 by laser induced fluorescence spectroscopy

      JOURNAL OF APPLIED PHYSICS
    17. Harza, S; Yamanaka, M; Sakata, I; Tsutsumi, T; Maeda, T; Suzuki, E
      Spectroscopic ellipsometry studies on ultrathin hydrogenated amorphous silicon films prepared by thermal chemical vapor deposition

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
    18. Panwar, OS; Mukherjee, C; Bhattacharyya, R
      Effect of annealing on the electrical, optical and structural properties of hydrogenated amorphous silicon films deposited in an asymmetric RF plasmaCVD system at room temperature

      SOLAR ENERGY MATERIALS AND SOLAR CELLS
    19. Mukherjee, C; Anandan, C; Seth, T; Dixit, PN; Bhattacharyya, R
      Properties of a-Si : H films deposited from silane diluted with hydrogen and helium using modified pulse plasma technique

      JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS
    20. Halac, EB; Huck, H; Oviedo, C; Reinoso, ME; de Benyacar, MAR
      Growth of amorphous SixC1-x thin films using a methane-silane high energy ion beam

      SURFACE & COATINGS TECHNOLOGY
    21. Huck, H; Halac, EB; Oviedo, C; Zampieri, G; Pregliasco, RG; Alonso, EV; Reinoso, ME; de Benyacar, MAR
      Characterization of amorphous carbon rich Si1-xCx thin films obtained using high energy hydrocarbon ion beams on Si

      APPLIED SURFACE SCIENCE
    22. Franta, D; Ohlidal, I; Munzar, D; Hora, J; Navratil, K; Manfredotti, C; Fizzotti, F; Vittone, E
      Complete optical characterization of imperfect hydrogenated amorphous silicon layers by spectroscopic ellipsometry and spectroscopic reflectometry

      THIN SOLID FILMS
    23. Wang, YZ; Awadelkarim, OO
      Polycrystalline silicon/dielectric/substrate material systems for thin film transistor applications: The impact of material properties on transistors' characteristics

      PHYSICA STATUS SOLIDI A-APPLIED RESEARCH
    24. Fukuzawa, T; Kushima, S; Matsuoka, Y; Shiratani, M; Watanabe, Y
      Growth of particles in cluster-size range in low pressure and low power SiH4 rf discharges

      JOURNAL OF APPLIED PHYSICS
    25. Voutsas, AT; Marmorstein, AM; Solanki, R
      The impact of annealing ambient on the performance of excimer-laser-annealed polysilicon thin-film transistors

      JOURNAL OF THE ELECTROCHEMICAL SOCIETY
    26. Bianco, N; Manca, O; Morrone, B
      Instationary conjugate optical-thermal fields in thin films due to pulsed laser heating: A comparison between back and front treatment

      HEAT AND MASS TRANSFER
    27. MCKITTRICK J; HIRATA GA; BACALSKI CF; SZE R; MOURANT J; HUBBARD KM; PATTILO S; SALAZAR KV; TRKULA M; GOSNELL TR
      ENHANCED PHOTOLUMINESCENT EMISSION OF THIN PHOSPHOR FILMS VIA PULSED EXCIMER-LASER MELTING

      Journal of materials research
    28. BANERJI N; SERRA J; GONZALEZ P; CHIUSSI S; PARADA E; LEON B; PEREZAMOR M
      OXIDATION PROCESSES IN HYDROGENATED AMORPHOUS-SILICON NITRIDE FILMS DEPOSITED BY ARF LASER-INDUCED CVD AT LOW-TEMPERATURES

      Thin solid films
    29. IM JS; CROWDER MA; SPOSILI RS; LEONARD JP; KIM HJ; YOON JH; GUPTA VV; SONG HJ; CHO HS
      CONTROLLED SUPER-LATERAL GROWTH OF SI FILMS FOR MICROSTRUCTURAL MANIPULATION AND OPTIMIZATION

      Physica status solidi. a, Applied research
    30. AOUCHER M; FARHI G; MOHAMMEDBRAHIM T
      CRYSTALLIZATION OF HYDROGENATED AMORPHOUS-SILICON DEPOSITED AT HIGH-RATE BY DC MAGNETRON SPUTTERING

      Journal of non-crystalline solids
    31. KROLL U; MEIER J; TORRES P; POHL J; SHAH A
      FROM AMORPHOUS TO MICROCRYSTALLINE SILICON FILMS PREPARED BY HYDROGENDILUTION USING THE VHF (70 MHZ) GD TECHNIQUE

      Journal of non-crystalline solids
    32. BUDAGUAN BG; SAZONOV AY; STRYAHILEV DA
      THE PROPERTIES OF POWDER PARTICLES INCORPORATED IN A-SI-H FILMS

      Journal of non-crystalline solids
    33. SOLOMON I; WEHRSPOHN RB; CHAZALVIEL JN; OZANAM F
      SPATIAL AND QUANTUM CONFINEMENT IN CRYSTALLINE AND AMORPHOUS POROUS SILICON

      Journal of non-crystalline solids
    34. GIUST GK; SIGMON TW
      HIGH-PERFORMANCE THIN-FILM TRANSISTORS FABRICATED USING EXCIMER-LASERPROCESSING AND GRAIN ENGINEERING

      I.E.E.E. transactions on electron devices
    35. KIM TH; RYU MK; KIM KB
      A COMPARISON OF THE KINETICS AND THE EVOLUTION OF MICROSTRUCTURE OF THE SOLID-PHASE CRYSTALLIZED A-(SI0.7GE0.3 SI) AND A-(SI/SI0.7GE0.3) BILAYER FILMS - INTERFACE VERSUS SURFACE NUCLEATED FILMS/

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS
    36. SUBRAMANIAN V; DANKOSKI P; DEGERTEKIN L; KHURIYAKUB BT; SARASWAT KC
      CONTROLLED 2-STEP SOLID-PHASE CRYSTALLIZATION FOR HIGH-PERFORMANCE POLYSILICON TFT

      IEEE electron device letters
    37. KANG MS; KIM JY; KOO YS; LIM TH; OH IW; JEON BJ; JUNG IY; AN C
      CHARACTERISTICS OF A-SI-H FILMS PREPARED BY ECR CVD AS A FUNCTION OF THE H-2 SIH4/

      Materials chemistry and physics
    38. KUMOMI H; YONEHARA T
      SELECTIVE NUCLEATION-BASED EPITAXY (SENTAXY) - A NOVEL-APPROACH FOR THIN-FILM FORMATION

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
    39. GOLIKOVA OA; KUZNETSOV AN; KUDOYAROVA VK; KAZANIN MM
      A-SI-H FILMS FABRICATED AT ELEVATED-TEMPERATURES BY DIRECT-CURRENT, MAGNETRON-ASSISTED SILANE DECOMPOSITION

      Semiconductors
    40. IM JS; SPOSILI RS
      CRYSTALLINE SI FILMS FOR INTEGRATED ACTIVE-MATRIX LIQUID-CRYSTAL DISPLAYS

      MRS bulletin
    41. ONISCHUK AA; STRUNIN VP; USHAKOVA MA; SAMOILOVA RI; PANFILOV VN
      ANALYSIS OF HYDROGEN AND PARAMAGNETIC DEFECTS IN A-SI-H AEROSOL-PARTICLES RESULTING FROM THERMAL-DECOMPOSITION OF SILANE

      Physica status solidi. b, Basic research
    42. ESME I; AKTAS G
      FREQUENCY-DEPENDENT CONDUCTIVITY IN AS0.40SE0.40TE0.20 THIN-FILMS

      Thin solid films
    43. LUBIANIKER Y; BALBERG I; FEFER E; SHAPIRA Y
      FOLLOWING DIRECTLY THE EFFECT OF THE VARIOUS DEEP STATES ON THE PHOTOTRANSPORT PROPERTIES OF A-SI-H

      Journal of non-crystalline solids
    44. KOUVATSOS DN; VOUTSAS AT; HATALIS MK
      HIGH-PERFORMANCE THIN-FILM TRANSISTORS IN LARGE GRAIN-SIZE POLYSILICON DEPOSITED BY THERMAL-DECOMPOSITION OF DISILANE

      I.E.E.E. transactions on electron devices
    45. KRETZ T; PRIBAT D; LEGAGNEUX P; PLAIS F; HUET O; MAGIS M
      ELECTRON-MICROSCOPY AND ELECTRON CONDUCTA NCE MEASUREMENTS IN-SITU OFTHE CRYSTALLIZATION OF A-SI FILMS PRODUCED BY SILANE AND DISILANE PYROLYSIS WITH LPDVD (LOW-PRESSURE CHEMICAL-VAPOR-DEPOSITION) UNDER HIGH-PURITY CONDITIONS

      Journal de physique. IV
    46. DEMICHELIS F; GIORGIS F; PIRRI CF; TRESSO E; DELLAMEA G; RIGATO V; ZANDOLIN S
      STRUCTURAL AND OPTOELECTRONIC PROPERTIES OF CARBON-RICH HYDROGENATED AMORPHOUS SILICON-CARBON FILMS

      DIAMOND AND RELATED MATERIALS
    47. CEVRO M; CARTER G
      ION-BEAM AND DUAL-ION-BEAM SPUTTER-DEPOSITION OF TANTALUM OXIDE-FILMS

      Optical engineering
    48. SHEN J; MANDELIS A; OTHONOS A; VANNIASINKAM J
      HIGH-RESOLUTION QUADRATURE PHOTOPYROELECTRIC SPECTROSCOPY OF A-SI-H THIN-FILMS DEPOSITED ON SILICON-WAFERS

      Applied spectroscopy
    49. STROH RJ; PLAIS F; KRETZ T; LEGAGNEUX P; HUET O; MAGIS M; PRIBAT D; JIANG N; HUGON MC; AGIUS B
      LOW-TEMPERATURE (LESS-THAN-OR-EQUAL-TO-600-DEGREES-C) POLYSILICON THIN-FILM TRANSISTORS

      IEE proceedings. Part G. Circuits, devices and systems
    50. ONISHCHUK AA; STRUNIN VP; USHAKOVA MA; PANFILOV VN
      AEROSOL-PARTICLES DURING SILANE PYROLYSIS

      Himiceskaa fizika
    51. POOL FS; ESSICK JM; SHING YH; MATHER RT
      DEPENDENCE OF THE A-SIH DEFECT DENSITY-OF-STATES ON THE MAGNETIC-FIELD PROFILE OF AN ELECTRON-CYCLOTRON-RESONANCE MICROWAVE PLASMA

      Thin solid films
    52. YU ZR; GENG XH; SUN Y; LIU SG; LI HB; LU JG; SUN J; SUN ZL; XU WY
      SUPER LARGE GRAIN-SIZE OF POLY-SI OBTAINED BY USING THE SOLID-PHASE CRYSTALLIZATION METHOD

      Physica status solidi. a, Applied research
    53. ABELSON JR; MANDRELL L; DOYLE JR
      HYDROGEN RELEASE KINETICS DURING REACTIVE MAGNETRON SPUTTER-DEPOSITION OF A-SI-H - AN ISOTOPE LABELING STUDY

      Journal of applied physics
    54. KUMOMI H; YONEHARA T
      TRANSIENT NUCLEATION AND MANIPULATION OF NUCLEATION SITES IN SOLID-STATE CRYSTALLIZATION OF A-SI FILMS

      Journal of applied physics
    55. MIDDYA AR; RAY S
      INFLUENCE OF DEPOSITION RATE AND HYDROGEN HELIUM DILUTION ON THE STRUCTURAL RELAXATION OF A-SIGE-H NETWORK PREPARED AT LOW SUBSTRATE-TEMPERATURE

      Journal of applied physics
    56. KURIYAMA H; NOHDA T; AYA Y; KUWAHARA T; WAKISAKA K; KIYAMA S; TSUDA S
      COMPREHENSIVE STUDY OF LATERAL GRAIN-GROWTH IN POLY-SI FILMS BY EXCIMER-LASER ANNEALING AND ITS APPLICATION TO THIN-FILM TRANSISTORS

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
    57. UMEZU I; DAIGO M; MEDA K
      INVESTIGATION OF SURFACE PASSIVATION EFFECT OF A-SINX-H ON A-SI-H BY PHOTOTHERMAL DEFLECTION SPECTROSCOPY

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS
    58. GALLONI R; RIZZOLI R; SUMMONTE C; ZIGNANI F; XIAO Y; PANKOVE JI
      PHOTOLUMINESCENCE AND PHOTOTHERMAL DEFLECTION SPECTROSCOPY IN POTASSIUM-DOPED A-SI-H

      Journal of non-crystalline solids
    59. DRUSEDAU T; PANCKOW A; HERMS W; SOBOTTA H; RIEDE V; BOTTCHER R; WITZMANN A
      THE INFLUENCE OF HYDROGEN AND ARGON PRESSURE ON COMPOSITION AND OPTOELECTRONIC PROPERTIES OF SPUTTERED A-SI1-XGEXH(X-APPROXIMATE-TO-0.4)

      Journal of non-crystalline solids
    60. LIN HC; JUNG TG; LIN HY; CHANG CY; LEI TF; WANG PJ; DENG RC; LIN JD; CHAO CY
      DEPOSITION AND DEVICE APPLICATION OF IN-SITU BORON-DOPED POLYCRYSTALLINE SIGE FILMS GROWN AT LOW-TEMPERATURES

      Journal of applied physics
    61. AMATO G; GIORGIS F
      ACCURATE RECONSTRUCTION OF THE DENSITY-OF-STATES IN A-SI-H BY CONSTANT PHOTOCURRENT METHOD AND PHOTOTHERMAL DEFLECTION SPECTROSCOPY

      Journal of applied physics
    62. MASAKI Y; LECOMBER PG; FITZGERALD AG
      SOLID-PHASE CRYSTALLIZATION OF THIN-FILMS OF SI PREPARED BY PLASMA-ENHANCED CHEMICAL-VAPOR-DEPOSITION

      Journal of applied physics
    63. SUGIURA O; SHIRAIWA T; MATSUMURA M
      A NOVEL POST-HYDROGENATION PROCESS FOR CHEMICAL-VAPOR-DEPOSITED A-SI THIN-FILM TRANSISTORS

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS


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Documento generato il 28/10/20 alle ore 04:12:50