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La ricerca find articoli where soggetti phrase all words 'AMORPHOUS-SILICON' sort by level,fasc_key/DESCEND, pagina_ini_num/ASCEND ha restituito 2669 riferimenti
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    1. Sarr, M; Brebner, JL
      Effect of electrical contact configuration on gap-states absorption spectra by photocurrent methods in hydrogenated amorphous silicon alloys

      SOLAR ENERGY MATERIALS AND SOLAR CELLS
    2. Fritzsche, H
      Development in understanding and controlling the Staebler-Wronski effect in a-Si : H

      ANNUAL REVIEW OF MATERIALS RESEARCH
    3. Rechtsteiner, GA; Hampe, O; Jarrold, MF
      Synthesis and temperature-dependence of hydrogen-terminated silicon clusters

      JOURNAL OF PHYSICAL CHEMISTRY B
    4. Sabel, M; Aichinger, U; Schulz-Wendtland, R
      Radiation exposure in X-ray mammography - A review.

      ROFO-FORTSCHRITTE AUF DEM GEBIET DER RONTGENSTRAHLEN UND DER BILDGEBENDEN VERFAHREN
    5. Reissberg, S; Hoeschen, C; Kastner, A; Theus, U; Fiedler, R; Krause, U; Dohring, W
      First clinical experience with a full-size, flat-panel detector for imaging the peripheral skeleton.

      ROFO-FORTSCHRITTE AUF DEM GEBIET DER RONTGENSTRAHLEN UND DER BILDGEBENDEN VERFAHREN
    6. Celasco, M; Eggenhoffner, R
      Universality of a dynamical percolative approach to 1/f(gamma) noise

      EUROPEAN PHYSICAL JOURNAL B
    7. Valladares, AA; Alvarez, F; Liu, Z; Sticht, J; Harris, J
      Ab initio studies of the atomic and electronic structure of pure and hydrogenated a-Si

      EUROPEAN PHYSICAL JOURNAL B
    8. Zontone, F; D'Acapito, F; Faraci, G; Pennisi, AR
      Evidence for a compressed fluid phase of Xe clusters

      EUROPEAN PHYSICAL JOURNAL B
    9. Reinhardt, S; Marian, CM; Frank, I
      The influence of excess ammonia on the mechanism of the reaction of boron trichloride with ammonia - An ab initio molecular dynamics study

      ANGEWANDTE CHEMIE-INTERNATIONAL EDITION
    10. Brandt, MS; Goennenwein, STB; Stutzmann, M
      Spin-dependent electronic noise

      PHYSICA E
    11. Cubaynes, FN; Stolk, PA; Verhoeven, J; Roozeboom, F; Woerlee, PH
      The influence of polysilicon gate morphology on dopant activation and deactivation kinetics in deep-submicron CMOS transistors

      MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
    12. Ortuno, M; Talamantes, J; Cuevas, E; Diaz-Sanchez, A
      Coulomb interactions in Anderson insulators

      PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICSELECTRONIC OPTICAL AND MAGNETIC PROPERTIES
    13. Choi, WK; Ng, V; Swee, VSL; Ong, CS; Yu, MB; Rusli; Yoon, SF
      Investigation of Ge nanocrystal formation in SiO2-Ge-SiO2 sandwich structure

      SCRIPTA MATERIALIA
    14. Bianco, N; Manca, O; Naso, V
      Transient conductive-radiative numerical analysis of multilayer thin filmsheated by different laser pulses

      INTERNATIONAL JOURNAL OF THERMAL SCIENCES
    15. Leroy, O; Videlot, H; Jolly, J
      Two-dimensional modelling of CH4-H-2 radio-frequency discharges for a-C : H deposition

      EUROPEAN PHYSICAL JOURNAL-APPLIED PHYSICS
    16. Hoffmann, SK; Hilczer, W; Goslar, J; Massa, MM; Calvo, R
      Electron spin relaxation in pseudo-Jahn-Teller low-symmetry Cu(II) complexes in diaqua(L-aspartate)Zn(II) center dot H2O crystals

      JOURNAL OF MAGNETIC RESONANCE
    17. Kon'kov, IO; Kuznetsov, AN; Pak, PE; Terukov, EI; Granitsyna, LS
      Erbium electroluminescence in an Al/a-Si : H(Er)/p-c-Si/Al heterostructure

      TECHNICAL PHYSICS LETTERS
    18. Weinstein, IA; Zatsepin, AF; Kortov, VS
      Quasi-dynamic structural disorder induced by fast neutrons in Be3Al2Si6O18crystals

      PHYSICS OF THE SOLID STATE
    19. Gritsenko, VA; Novikov, YN; Shaposhnikov, AV; Morokov, YN
      Numerical simulation of intrinsic defects in SiO2 and Si3N4

      SEMICONDUCTORS
    20. Lysenko, VS; Tyagulskii, IP; Osiyuk, IN; Nazarov, AN; Vovk, YN; Gomenyuk, YV; Terukov, EI; Kon'kov, OI
      Effect of erbium on electronic traps in PECVD-grown a-Si : H(Er)/c-Si structures

      SEMICONDUCTORS
    21. Kuznetsov, SV; Terukov, EI
      Influence of a-Si : H band tails on the occupation of dangling-bond statesand on photoconductivity

      SEMICONDUCTORS
    22. Kuznetsov, SV
      Numerical calculation of the temperature dependences of photoconductivity in the p-type a-Si : H

      SEMICONDUCTORS
    23. Kon'kov, OI; Terukov, EI; Granitsyna, LS
      Effect of doping with nitrogen on electrical properties and erbium electroluminescence of a-Si : H(Er) films

      SEMICONDUCTORS
    24. Golubev, VG; Dukin, AA; Medvedev, AV; Pevtsov, AB; Sel'kin, AV; Feoktistov, NA
      Fabry-Perot a-Si : H/a-SiOx : H microcavities with an erbium-doped a-Si : H active layer

      SEMICONDUCTORS
    25. Pan, BC
      Tight-binding potential with correction of bonding environment for silicon-hydrogen

      ACTA PHYSICA SINICA
    26. Park, YB; Rhee, SW
      Bulk and interface properties of low-temperature silicon nitride films deposited by remote plasma enhanced chemical vapor deposition

      JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS
    27. Giovine, E; Notargiacomo, A; Di Gaspare, L; Palange, E; Evangelisti, F; Leoni, R; Castellano, G; Torrioli, G; Foglietti, V
      Investigation of SiGe-heterostructure nanowires

      NANOTECHNOLOGY
    28. Bucher, V; Brunner, B; Leibrock, C; Schubert, M; Nisch, W
      Electrical properties of a light-addressable microelectrode chip with highelectrode density for extracellular stimulation and recording of excitablecells

      BIOSENSORS & BIOELECTRONICS
    29. Chelikowsky, JR; Derby, JJ; Godlevsky, VV; Jain, M; Raty, JY
      Ab initio simulations of liquid semiconductors using the pseudopotential-density functional method

      JOURNAL OF PHYSICS-CONDENSED MATTER
    30. Lee, M; Moon, S; Hatano, M; Grigoropoulos, CP
      Ultra-large lateral grain growth by double laser recrystallization of a-Sifilms

      APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING
    31. Hennigs, SP; Garmer, M; Jaeger, HJ; Classen, R; Jacobs, A; Gissler, HM; Christmann, A; Mathias, K
      Digital chest radiography with a large-area flat-panel silicon X-ray detector: clinical comparison with conventional radiography

      EUROPEAN RADIOLOGY
    32. Wamser, GR; Aichinger, H; Maier, W; Bohndorf, K
      Clinical evaluation of a new stationary high strip density antiscatter grid in comparison with a conventional moving grid: influence on image qualityand patient radiation dose

      EUROPEAN RADIOLOGY
    33. Hamers, S; Freyschmidt, J; Neitzel, U
      Digital radiography with a large-scale electronic flat-panel detector vs screen-film radiography: observer preference in clinical skeletal diagnostics

      EUROPEAN RADIOLOGY
    34. Choi, WK; Ng, V; Ho, YW; Ng, SP; Chen, TB; Yu, MB; Rusli; Yoon, SF; Cheong, BA; Chen, GL
      Raman and photoluminescence characterization of Ge nanocrystals in co-sputtered Ge+SiO2 system

      MATERIALS SCIENCE & ENGINEERING C-BIOMIMETIC AND SUPRAMOLECULAR SYSTEMS
    35. Barkema, GT; Mousseau, N
      The activation-relaxation technique: an efficient algorithm for sampling energy landscapes

      COMPUTATIONAL MATERIALS SCIENCE
    36. Fornari, M; Marzari, N; Peressi, M; Baldereschi, A
      Wannier functions characterization of floating bonds in a-Si

      COMPUTATIONAL MATERIALS SCIENCE
    37. Kodolbas, AO; Eray, A; Oktu, O
      Effect of light-induced metastable defects on photocarrier lifetime

      SOLAR ENERGY MATERIALS AND SOLAR CELLS
    38. Hamma, S; Cabarrocas, PRI
      Low-temperature growth of thick intrinsic and ultrathin phosphorous or boron-doped microcrystalline silicon films: Optimum crystalline fractions for solar cell applications

      SOLAR ENERGY MATERIALS AND SOLAR CELLS
    39. McLeskey, JT; Norris, PM
      Femtosecond transmission studies of a-Si : H, a-SiGe : H and a-SiC : H alloys pumped in the exponential band tails

      SOLAR ENERGY MATERIALS AND SOLAR CELLS
    40. Tucci, M; De Rosa, R; Roca, F
      CF4/O-2 dry etching of textured crystalline silicon surface in a-Si : H/c-Si heterojunction for photovoltaic applications

      SOLAR ENERGY MATERIALS AND SOLAR CELLS
    41. Wallinga, J; Nilsson, D; van der Weg, WF; Schropp, REI
      Light scattering coefficients for textured SnO

      SOLAR ENERGY MATERIALS AND SOLAR CELLS
    42. Ozkan, E; Tepehan, FZ
      Optical and structural characteristics of sol-gel-deposited tungsten oxideand vanadium-doped tungsten oxide films

      SOLAR ENERGY MATERIALS AND SOLAR CELLS
    43. Ghodsi, FE; Tepehan, FZ; Tepehan, GG
      Study of time effect on the optical properties of spin-coated CeO2-TiO2 thin films

      SOLAR ENERGY MATERIALS AND SOLAR CELLS
    44. Koch, C; Ito, M; Schubert, M
      Low-temperature deposition of amorphous silicon solar cells

      SOLAR ENERGY MATERIALS AND SOLAR CELLS
    45. Sheng, SR; Liao, XB; Ma, ZX; Yue, GZ; Wang, YQ; Kong, GL
      Hydrogenated amorphous silicon films with significantly improved stability

      SOLAR ENERGY MATERIALS AND SOLAR CELLS
    46. Yamawaki, T; Mizukami, S; Masui, T; Takahashi, H
      Experimental investigation on generated power of amorphous PV module for roof azimuth

      SOLAR ENERGY MATERIALS AND SOLAR CELLS
    47. Kocka, J; Fejfar, A; Fojtik, P; Luterova, K; Pelant, I; Rezek, B; Stuchlikova, H; Stuchlik, J; Svrcek, V
      Charge transport in microcrystalline Si - the specific features

      SOLAR ENERGY MATERIALS AND SOLAR CELLS
    48. Okamoto, S; Maruyama, E; Terakawa, A; Shinohara, W; Nakano, S; Hishikawa, Y; Wakisaka, K; Kiyama, S
      Towards large-area, high-efficiency a-Si/a-SiGe tandem solar cells

      SOLAR ENERGY MATERIALS AND SOLAR CELLS
    49. Ichikawa, Y; Yoshida, T; Hama, T; Sakai, H; Harashima, K
      Production technology for amorphous silicon-based flexible solar cells

      SOLAR ENERGY MATERIALS AND SOLAR CELLS
    50. Shimizu, I
      Formation of stable Si network at low T-s by controlling chemical reactionat growing surface

      SOLAR ENERGY MATERIALS AND SOLAR CELLS
    51. Furlan, J; Gorup, Z; Smole, F; Topic, M
      Modeling charge-carrier transport and generation-recombination mechanisms in p(+)n(+) a-Si tunnel junctions

      SOLAR ENERGY MATERIALS AND SOLAR CELLS
    52. Matsumoto, Y; Melendez, F; Asomoza, R
      Performance of p-type silicon-oxide windows in amorphous silicon solar cell

      SOLAR ENERGY MATERIALS AND SOLAR CELLS
    53. Nishimoto, T; Takagi, T; Kondo, M; Matsuda, A
      Effect of halogen additives on the stability of a-Si : H films deposited at a high-growth rate

      SOLAR ENERGY MATERIALS AND SOLAR CELLS
    54. Herm, D; von Aichberger, S; Kunst, M
      The influence of doping on charge carrier transport in a-Si : H

      SOLAR ENERGY MATERIALS AND SOLAR CELLS
    55. Shimizu, T; Sugiyama, H; Kumeda, M
      A large discrepancy between CPM and ESR defect densities in light-soaked a-Si : H

      SOLAR ENERGY MATERIALS AND SOLAR CELLS
    56. Fujiwara, H; Toyoshima, Y; Kondo, M; Matsuda, A
      Application of real-time in situ spectroscopic ellipsometry and infrared spectroscopy for characterizing interface structure of a-Si : H layer

      SOLAR ENERGY MATERIALS AND SOLAR CELLS
    57. Jiao, L; Niu, X; Lu, Z; Wronski, CR; Matsuda, A; Kamei, T; Ganguly, G
      A new perspective on the characterization of materials for a-Si : H solar cells

      SOLAR ENERGY MATERIALS AND SOLAR CELLS
    58. Kitao, J; Harada, H; Yoshida, N; Kasuya, Y; Nishio, M; Sakamoto, T; Itoh, T; Nonomura, S; Nitta, S
      Absorption coefficient spectra of mu c-Si in the low-energy region 0.4-1.2eV

      SOLAR ENERGY MATERIALS AND SOLAR CELLS
    59. Masuda, A; Niikura, C; Ishibashi, Y; Matsumura, H
      Dominant parameter determining dangling-bond density in hydrogenated amorphous silicon films prepared by catalytic chemical vapor deposition

      SOLAR ENERGY MATERIALS AND SOLAR CELLS
    60. Shimizu, S; Komaru, T; Okawa, K; Azuma, M; Kamiya, T; Fortmann, CM; Shimizu, I
      Properties of amorphous silicon solar cells fabricated from SiH2Cl2

      SOLAR ENERGY MATERIALS AND SOLAR CELLS
    61. Ohkawa, K; Shimizu, S; Sato, H; Komaru, T; Futako, W; Kamiya, T; Fortmann, CM; Shimizu, I
      Stability of a-Si : H solar cells deposited by Ar-treatment or by ECR techniques

      SOLAR ENERGY MATERIALS AND SOLAR CELLS
    62. Sato, H; Fukutani, K; Futako, W; Kamiya, T; Fortmann, CM; Shimizu, I
      High-quality narrow gap (similar to 1.52 eV) a-Si : H with improved stability fabricated by excited inert gas treatment

      SOLAR ENERGY MATERIALS AND SOLAR CELLS
    63. Sakikawa, N; Shishida, Y; Miyazaki, S; Hirose, M
      High-rate deposition of hydrogenated amorphous silicon films using inductively coupled silane plasma

      SOLAR ENERGY MATERIALS AND SOLAR CELLS
    64. Vukadinovic, M; Smole, F; Topic, M; Krc, J; Furlan, J
      Numerical modelling of trap-assisted tunnelling mechanism in a-Si : H and mu c-Si n/p structures and tandem solar cells

      SOLAR ENERGY MATERIALS AND SOLAR CELLS
    65. Isomura, M; Kondo, M; Matsuda, A
      High-pressure plasma CVD for high-quality amorphous silicon

      SOLAR ENERGY MATERIALS AND SOLAR CELLS
    66. Nast, O; Brehme, S; Pritchard, S; Aberle, AG; Wenham, SR
      Aluminium-induced crystallisation of silicon on glass for thin-film solar cells

      SOLAR ENERGY MATERIALS AND SOLAR CELLS
    67. Gan, B; Ahn, J; Zhang, Q; Yoon, SF; Yu, MB; Ligatchev, VA; Yu, J; Kerlit, C; Huang, QF
      Thickness dependent density distribution of gap states in undoped CVD diamond films

      DIAMOND AND RELATED MATERIALS
    68. Esteve, J; Lousa, A; Martinez, E; Huck, H; Halac, EB; Reinoso, M
      Amorphous SixC1-x films: an example of materials presenting low indentation hardness and high wear resistance

      DIAMOND AND RELATED MATERIALS
    69. Wang, YH; Lin, J; Huan, CHA; Feng, ZC; Chua, SJ
      Post-growth rapid thermal annealing effect on hydrogenated amorphous silicon carbide thin film

      DIAMOND AND RELATED MATERIALS
    70. Chew, K; Rusli; Yu, MB; Yoon, SF; Ligatchev, V; Ahn, J
      Density of gap states in amorphous hydrogenated silicon carbide determinedusing high-frequency capacitance-voltage measurement technique

      DIAMOND AND RELATED MATERIALS
    71. Ehara, T; Notake, K; Handa, K
      Paramagnetic defects in silicon carbide grains embedded in SiO2 matrix

      DIAMOND AND RELATED MATERIALS
    72. Tetelbaum, DI; Trushin, SA; Krasil'nik, ZF; Gaponova, DM; Mikhailov, AN
      Luminescence of silicon nanostructured by irradiation with heavy ions

      OPTICAL MATERIALS
    73. Schmid, U; Eickhoff, M; Richter, C; Krotz, G; Schmitt-Landsiedel, D
      Etching characteristics and mechanical properties of a-SiC : H thin films

      SENSORS AND ACTUATORS A-PHYSICAL
    74. Nedev, N; Georgiev, SS; Sueva, D; Smirnov, N; Toneva, A
      Carrier transport in a position sensitive detector based on an ITO/a-Si : H/Pd structure

      SENSORS AND ACTUATORS A-PHYSICAL
    75. Honer, KA; Kovacs, GTA
      Integration of sputtered silicon microstructures with pre-fabricated CMOS circuitry

      SENSORS AND ACTUATORS A-PHYSICAL
    76. Lee, DJ; Lee, YH; Jang, J; Ju, BK
      Glass-to-glass electrostatic bonding with intermediate amorphous silicon film for vacuum packaging of microelectronics and its application

      SENSORS AND ACTUATORS A-PHYSICAL
    77. Caputo, D; de Cesare, G; Tucci, M
      Characterisation and modelling of a two terminal visible/infrared photodetector based on amorphous/crystalline silicon heterostructure

      SENSORS AND ACTUATORS A-PHYSICAL
    78. Lau, SP; Xu, XL; Shi, JR; Ding, XZ; Sun, Z; Tay, BK
      Dependences of amorphous structure on bias voltage and annealing in silicon-carbon alloys

      MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY
    79. Kleider, JP; Longeaud, C; Meaudre, R; Meaudre, M; Vignoli, S; Koughia, KV; Terukov, EI
      Electronic properties of Erbium doped amorphous silicon

      MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY
    80. Terukov, EI; Kudoyarova, VK; Kuznetsov, AN; Koughia, KV; Weiser, G; Kuehne, H
      Photoluminescence of ytterbium doped amorphous silicon and silicon carbide

      MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY
    81. Yassievich, IN; Bresler, MS; Gusev, OB; Pak, PE; Tsendin, KD; Terukov, EI
      Mechanism of electroluminescence in the amorphous silicon-based erbium-doped structures

      MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY
    82. Katiyar, M; Abelson, JR
      Investigation of hydrogen induced phase transition from a-Si : H to mu c-Si : H using real time infrared spectroscopy

      MATERIALS SCIENCE AND ENGINEERING A-STRUCTURAL MATERIALS PROPERTIES MICROSTRUCTURE AND PROCESSING
    83. Polman, A
      Erbium as a probe of everything?

      PHYSICA B
    84. Hu, J; Hajto, J; Snell, AJ; Rose, MJ
      Electron transport in metal-amorphous silicon-metal memory devices

      IEICE TRANSACTIONS ON ELECTRONICS
    85. Shibamoto, K; Katayama, K; Fujinami, M; Sawada, T
      Detection using transient reflecting grating spectroscopy for the ultrafast interaction between photoexcited electrons and adsorbed molecules at a gold surface

      ANALYTICAL SCIENCES
    86. Wrobel, AM; Walkiewicz-Pietrzykowska, A; Hatanaka, Y; Wickramanayaka, S; Nakanishi, Y
      Oligomerization and polymerization steps in remote plasma chemical vapor deposition of silicon-carbon and silica films from organosilicon sources

      CHEMISTRY OF MATERIALS
    87. Vaccaro, S; Torres, P; Mosig, JR; Shah, A; Skrivervik, AK; Zurcher, JF; de Maagt, P; Gerlach, L
      Combination of antennas and solar cells for satellite communications

      MICROWAVE AND OPTICAL TECHNOLOGY LETTERS
    88. Pant, A; Russell, TWF; Huff, MC; Aparicio, R; Birkmire, RW
      Hot-wire chemical vapor deposition of silicon from silane: Effect of process conditions

      INDUSTRIAL & ENGINEERING CHEMISTRY RESEARCH
    89. Pant, A; Huff, MC; Russell, TWF
      Reactor and reaction model for the hot-wire chemical vapor deposition of silicon from silane

      INDUSTRIAL & ENGINEERING CHEMISTRY RESEARCH
    90. Seol, KS; Hiramatsu, H; Ohki, Y; Choi, IH; Kim, YT
      Low-temperature crystallization induced by excimer laser irradiation of SrBi2Ta2O9 films

      JOURNAL OF MATERIALS RESEARCH
    91. Wehrspohn, RB; Schilling, J
      Electrochemically prepared pore arrays for photonic-crystal applications

      MRS BULLETIN
    92. Lin, CW; Cheng, LJ; Lu, YL; Lee, YS; Cheng, HC
      High-performance low-temperature poly-Si TFTs crystallized by excimer laser irradiation with recessed-channel structure

      IEEE ELECTRON DEVICE LETTERS
    93. Karim, KS; Nathan, A
      Readout circuit in active pixel sensors in amorphous silicon technology

      IEEE ELECTRON DEVICE LETTERS
    94. Xu, K; Shah, SI; Guerin, D
      Low temperature deposition and characterization of polycrystalline Si films on polymer substrates

      JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS
    95. Vargheese, KD; Rao, GM
      Ion-assisted deposition of silicon nitride films using electron cyclotron resonance plasma

      JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS
    96. Kessels, WMM; Leroux, A; Boogaarts, MGH; Hoefnagels, JPM; van de Sanden, MCM; Schram, DC
      Cavity ring down detection of SiH3 in a remote SiH4 plasma and comparison with model calculations and mass spectrometry

      JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS
    97. Cicala, G; Capezzuto, P; Bruno, G
      Microcrystalline silicon by plasma enhanced chemical vapor deposition fromsilicon tetrafluoride

      JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS
    98. Hadjadj, A; Beorchia, A; Boufendi, L; Huet, S; Cabarrocas, PRI
      Crystallization of nanostructured silicon films deposited under a low-pressure argon-silane pulsed-glow discharge: Correlation with the plasma duration

      JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS
    99. Abay, B; Guder, HS; Efeoglu, H; Yogurtcu, YK
      Urbach-Martienssen tails in the absorption spectra of layered ternary semiconductor TlGaS2

      PHYSICA STATUS SOLIDI B-BASIC RESEARCH
    100. Delerue, C; Lannoo, M; Allan, G
      Tight binding for complex semiconductor systems

      PHYSICA STATUS SOLIDI B-BASIC RESEARCH


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Documento generato il 25/05/20 alle ore 00:56:09