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La ricerca find articoli where soggetti phrase all words 'ALXGA1-XAS' sort by level,fasc_key/DESCEND, pagina_ini_num/ASCEND ha restituito 987 riferimenti
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    1. Zanelato, G; Pusep, YA; Galzerani, JC; Lubyshev, DI; Gonzalez-Borrero, PP
      Raman study of the segregation of GaAs/AlAs heterostructures grown by molecular beam epitaxy

      PHYSICA E
    2. Choi, KK; Kennerly, SW; Yao, J; Tsui, DC
      Characteristics of QWIPs at low background

      INFRARED PHYSICS & TECHNOLOGY
    3. Pulver, D; Wilmsen, CW; Niles, D; Kee, R
      Thermal oxides of In0.5Ga0.5P and In0.5Al0.5P

      JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B
    4. Karavaev, GF; Chernyshov, VN
      Electronic state mixing in X-x and X-y valleys in AlAs/GaAs (001)

      SEMICONDUCTORS
    5. Onopko, DE; Ryskin, AI
      Physical foundations of metastable impurity center reconstruction in semiconductors

      SEMICONDUCTORS
    6. Zhang, XB; Taliercio, T; Kolliakos, S; Lefebvre, P
      Influence of electron-phonon interaction on the optical properties of III nitride semiconductors

      JOURNAL OF PHYSICS-CONDENSED MATTER
    7. Djurisic, AB; Li, EH
      Modeling the optical constants of CuGaSe2 and CuInSe2

      APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING
    8. Kundrotas, J; Dargys, A; Valusis, G; Asmontas, S; Granja, C; Pospisil, S; Kohler, K
      Changes of MQW photoluminescence under alpha particle irradiation

      SUPERLATTICES AND MICROSTRUCTURES
    9. Tiras, E; Cankurtaran, M; Celik, H; Thoms, AB; Balkan, N
      Magnetotransport in modulation-doped In0.53Ga0.47As/In0.52Al0.48As heterojunctions: in-plane effective mass, quantum and transport mobilities of 2D electrons

      SUPERLATTICES AND MICROSTRUCTURES
    10. Zanelato, G; Pusep, YA; Galzerani, JC; Lubyshev, DI; Gonzalez-Borrero, PP
      Study of the segregation process in GaAs/AlAs superlattices using Raman spectroscopy

      JOURNAL OF RAMAN SPECTROSCOPY
    11. Liu, PJ; Lu, GW; Liu, XD; Xia, YY; Chen, Y; Zhou, YQ; Li, YG; Pan, JQ; Ge, SH
      Investigation of weak damage in Al0.25Ga0.75As/GaAs by using RBS/C and Raman spectroscopy

      PHYSICS LETTERS A
    12. Hardtdegen, H; Schmidt, R; Wirtz, K; Mueck, A; Guadagnuolo, S; Vergani, G
      On the suitability of getter-purified hydrogen for the LP-MOVPE of (AlGa)As: A comparison to Pd-diffused hydrogen

      JOURNAL OF ELECTRONIC MATERIALS
    13. Saleh, ABA; Rector, M; Ostromek, TE; Julien, J; Estrera, JP; Glosser, R
      Photoreflectance of Zn : AlxGa1-xAs at the E-1 transition energy as a function of carrier concentration and aluminum composition

      PHYSICA SCRIPTA
    14. Reuter, D; Kahler, D; Kunze, U; Wieck, AD
      Layer-compensated selectively doped AlxGa1-xAs/GaAs heterostructures as a base material for nanolithography

      SEMICONDUCTOR SCIENCE AND TECHNOLOGY
    15. Djurisic, AB; Li, EH
      Response to the comment on 'Modelling the optical constants of GaAs: excitonic effects at E1, E1+Delta(1) critical points'

      SEMICONDUCTOR SCIENCE AND TECHNOLOGY
    16. Djurisic, AB; Li, EH
      Modelling the optical constants of SixGe1-x alloys in the range 1.7-5.6 eV

      SEMICONDUCTOR SCIENCE AND TECHNOLOGY
    17. Bouarissa, N
      Energy gaps and refractive indices of AlxGa1-xAs

      MATERIALS CHEMISTRY AND PHYSICS
    18. Fonthal, G; de los Rios, M; Quintero, J; Piraquive, N; Ariza-Calderon, H
      The hot carrier temperature in the analysis of the free to acceptor photoluminescence transition

      MODERN PHYSICS LETTERS B
    19. Jung, M; Kim, TW; Lee, DU; Choo, DC; Yoo, KH; Kim, DL; Kim, MD; Lim, H
      The dependence of the carrier density and the mobility on the spacer-layerthickness in modulation-doped AlxGa1-xAs/InyGa1-yAs/GaAs asymmetric singlequantum wells

      APPLIED SURFACE SCIENCE
    20. Popela, J; Popela, K; Dilenas, A; Jasutis, V; Dapkus, L; Juciene, V
      X-ray luminescence spectra of graded-gap AlxGa1-xAs structures

      NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT
    21. Popela, K; Popela, J; Dilenas, A; Jasutis, V; Dapkus, L; Juciene, V
      The AlxGa1-xAs X-ray imaging detector

      NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT
    22. Wendler, E; Breeger, B; Wesch, W
      Anomalous damaging behaviour of AlAs during ion implantation at 15 K

      NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS
    23. Hillman, C; Jiang, HW
      Magnetic-field pinning of a dynamic electron-spin-resonance line in a GaAs/AlxGa1-xAs heterostructure - art. no. 201308

      PHYSICAL REVIEW B
    24. Erlingsson, SI; Nazarov, YV; Fal'ko, VI
      Nucleus-mediated spin-flip transitions in GaAs quantum dots - art. no. 195306

      PHYSICAL REVIEW B
    25. Novak, V; Svoboda, P; Kreuzer, S; Wegscheider, W; Prettl, W
      Current-induced spatial patterns of photoluminescence in AlxGa1-xAs/GaAs heterojunctions at quantizing magnetic fields - art. no. 165302

      PHYSICAL REVIEW B
    26. Yan, ZW; Liang, XX; Ban, SL
      Interface optical phonon-assisted tunneling in double-barrier structures -art. no. 125321

      PHYSICAL REVIEW B
    27. Tiras, E; Cankurtaran, M; Celik, H; Balkan, N
      Hot electron energy relaxation via acoustic phonon emission in modulation-doped In0.53Ga0.47As/In0.52Al0.48As heterojunctions with double-subband occupancy - art. no. 085301

      PHYSICAL REVIEW B
    28. Jiang, HW; Yablonovitch, E
      Gate-controlled electron spin resonance in GaAs/AlxGa1-xAs heterostructures - art. no. 041307

      PHYSICAL REVIEW B
    29. Goscinski, K; Dobaczewski, L; Nielsen, KB; Larsen, AN; Peaker, AR
      High-resolution deep-level transient spectroscopy studies of gold and platinum acceptor states in diluted SiGe alloys - art. no. 235309

      PHYSICAL REVIEW B
    30. Reklaitis, A; Grigaliunaite, G
      Monte Carlo study of dc and ac vertical electron transport in a single-barrier heterostructure - art. no. 155301

      PHYSICAL REVIEW B
    31. Czyszanowski, T; Wasiak, M; Nakwaski, W
      Design considerations for GaAs/(AlGa)As SCH and GRIN-SCH quantum-well laser structures. II. The results

      OPTICA APPLICATA
    32. Khaetskii, AV
      Comment on "Spin relaxation in quantum Hall systems" - art. no. 049701

      PHYSICAL REVIEW LETTERS
    33. Rimada, JC; Hernandez, L
      Modelling of ideal AlGaAs quantum well solar cells

      MICROELECTRONICS JOURNAL
    34. Zhou, D; Usher, BF
      Deviation of the AlGaAs lattice constant from Vegard's law

      JOURNAL OF PHYSICS D-APPLIED PHYSICS
    35. Koh, S; Kondo, T; Shiraki, Y; Ito, R
      GaAs/Ge/GaAs sublattice reversal epitaxy and its application to nonlinear optical devices

      JOURNAL OF CRYSTAL GROWTH
    36. Kitada, T; Aoki, T; Watanabe, I; Shimomura, S; Hiyamizu, S
      Optimized channel thickness for high electron mobility in pseudomorphic In0.74Ga0.26As/In0.52Al0.48As quantum-well HEMT structures with (411)A super-flat interfaces grown by MBE

      JOURNAL OF CRYSTAL GROWTH
    37. Jia, HQ; Chen, H; Wang, WC; Wang, WX; Li, W; Huang, Q; Zhou, JM
      The study of thermal stability during wet oxidation of AlAs

      JOURNAL OF CRYSTAL GROWTH
    38. Rogozia, M; Krispin, P; Grahn, HT
      Giant resistance changes in (Al,Ga)As contact layers of GaAs/AlAs superlattices due to deep donors

      JOURNAL OF APPLIED PHYSICS
    39. Tribuzy, CVB; Butendeich, R; Pires, MP; Souza, PL; Henriques, AB
      Carbon delta-doped AlGaAs grown by metalorganic vapor phase epitaxy

      JOURNAL OF APPLIED PHYSICS
    40. Soh, YA; Aeppli, G; Zimmermann, FM; Isaacs, ED; Frenkel, AI
      X-ray induced persistent photoconductivity in Si-doped Al0.35Ga0.65As

      JOURNAL OF APPLIED PHYSICS
    41. Yu, TH; Brennan, KF
      Theoretical study of the two-dimensional electron mobility in strained III-nitride heterostructures

      JOURNAL OF APPLIED PHYSICS
    42. Kawano, Y; Hisanaga, Y; Takenouchi, H; Komiyama, S
      Highly sensitive and tunable detection of far-infrared radiation by quantum Hall devices

      JOURNAL OF APPLIED PHYSICS
    43. Goldoni, G
      Optimal design and quantum limit for second harmonic generation in semiconductor heterostructures

      JOURNAL OF APPLIED PHYSICS
    44. Lourenco, SA; Dias, IFL; Duarte, JL; Laureto, E; Meneses, EA; Leite, JR; Mazzaro, I
      Temperature dependence of optical transitions in AlGaAs

      JOURNAL OF APPLIED PHYSICS
    45. Chang, KL; Pickrell, GW; Wohlert, DE; Epple, JH; Lin, HC; Cheng, KY; Hsieh, KC
      Microstructure and wet oxidation of low-temperature-grown amorphous (Al/Ga,As)

      JOURNAL OF APPLIED PHYSICS
    46. Tan, CH; David, JPR; Plimmer, SA; Rees, GJ; Tozer, RC; Grey, R
      Low multiplication noise thin Al0.6Ga0.4As avalanche photodiodes

      IEEE TRANSACTIONS ON ELECTRON DEVICES
    47. Ng, BK; David, JPR; Plimmer, SA; Rees, GJ; Tozer, RC; Hopkinson, M; Hill, G
      Avalanche multiplication characteristics of Al0.8Ga0.2As diodes

      IEEE TRANSACTIONS ON ELECTRON DEVICES
    48. Beadie, G; Rabinovich, WS; Ding, YJ
      Transversely pumped nonlinear conversion structure which generates counterpropagating guided waves: Theory and numerical modeling

      IEEE JOURNAL OF QUANTUM ELECTRONICS
    49. Tomic, S; Milanovic, V; Ikonic, Z
      Gain optimization in optically pumped AlGaAs unipolar quantum-well lasers

      IEEE JOURNAL OF QUANTUM ELECTRONICS
    50. Oyama, Y; Matsumoto, F; Watanabe, H; Suto, K; Nishizawa, J
      Persistent photoconductivity under atmospheric pressure in uniformly dopedn-GaAs prepared by intermittent injection of (CH3)(3)Ga/AsH3

      JOURNAL OF THE ELECTROCHEMICAL SOCIETY
    51. Patterson, BD; Abela, R; van der Veen, JF
      Materials science at the Swiss light source

      CHIMIA
    52. Markowitz, PD; Zach, MP; Gibbons, PC; Penner, RM; Buhro, WE
      Phase separation in AlxGa1-xAs nanowhiskers grown by the solution-liquid-solid mechanism

      JOURNAL OF THE AMERICAN CHEMICAL SOCIETY
    53. Djurisic, AB; Fritz, T; Leo, K
      Modelling the optical constants of organic thin films: impact of the choice of objective function

      JOURNAL OF OPTICS A-PURE AND APPLIED OPTICS
    54. Vitkalov, SA; Bowers, CR; Simmons, JA; Reno, JL
      ESR detection of optical dynamic nuclear polarization in GaAs/AlxGa1-xAs quantum wells at unity filling factor in the quantum Hall effect

      PHYSICAL REVIEW B
    55. Pedersen, S; Hansen, AE; Kristensen, A; Sorensen, CB; Lindelof, PE
      Observation of quantum asymmetry in an Aharonov-Bohm ring

      PHYSICAL REVIEW B
    56. Meisels, R; Kulac, I; Kuchar, F; Kriechbaum, M
      Electron spin resonance of the two-dimensional electron system in AlxGa1-xAs/GaAs at subunity filling factors

      PHYSICAL REVIEW B
    57. Kim, Y; Munteanu, FM; Perry, CH; Rickel, DG; Simmons, JA; Reno, JL
      Magnetic-field-induced charged exciton studies in a GaAs/Al0.3Ga0.7As single heterojunction

      PHYSICAL REVIEW B
    58. Komiyama, S; Kawaguchi, Y
      Heat instability of quantum Hall conductors

      PHYSICAL REVIEW B
    59. Vitusevich, SA; Forster, A; Indlekofer, KM; Luth, H; Belyaev, AE; Glavin, BA; Konakova, RV
      Tunneling through X-valley-related impurity states in GaAs/AlAs resonant-tunneling diodes

      PHYSICAL REVIEW B
    60. Dekel, E; Gershoni, D; Ehrenfreund, E; Garcia, JM; Petroff, PM
      Carrier-carrier correlations in an optically excited single semiconductor quantum dot

      PHYSICAL REVIEW B
    61. Das Sarma, S; Hwang, EH
      Calculated temperature-dependent resistance in low-density two-dimensionalhole gases in GaAs heterostructures

      PHYSICAL REVIEW B
    62. Moosburger, J; Happ, T; Kamp, M; Forchel, A
      Nanofabrication techniques for lasers with two-dimensional photonic crystal mirrors

      JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B
    63. Grinyaev, SN; Karavaev, GF
      Electron tunneling through thin barrier with smooth potential at GaAs/AlAs(001) heterointerfaces

      PHYSICS OF THE SOLID STATE
    64. Dem'yanenko, MA; Ovsyuk, VN; Shashkin, VV
      Multiphonon capture of charge carriers by deep-level centers in a depletion region of a semiconductor

      SEMICONDUCTORS
    65. Yuan, P; Wang, S; Sun, X; Zheng, XG; Holmes, AL; Campbell, JC
      Avalanche photodiodes with an impact-ionization-engineered multiplication region

      IEEE PHOTONICS TECHNOLOGY LETTERS
    66. Leifer, K; Buffat, PA; Stadelmann, PA; Kapon, E
      Theoretical and experimental limits of the analysis of III/V semiconductors using EELS

      MICRON
    67. Sun, KW; Chang, HY; Wang, CM; Wang, SY; Lee, CP
      Hot-electron relaxation via optical phonon emissions in GaAs/AlxGa1-xAs quantum well structures: dependence upon the alloy composition and barrier width

      NANOTECHNOLOGY
    68. Chen, Y; Zhang, W; Li, GH; Zhu, ZM; Han, HX; Wang, ZP; Zhou, W; Wang, ZG
      Pressure behaviour of self-assembled In0.55Al0.45As/Al0.5Ga0.5As quantum dots with multi-modal distribution in size

      JOURNAL OF PHYSICS-CONDENSED MATTER
    69. Djurisic, AB; Li, EH; Rakic, D; Majewski, ML
      Modeling the optical properties of AlSb, GaSb, and InSb

      APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING
    70. Toh, SL; Tay, CJ; Ng, SH; Rahman, M
      AlxGa1-xAs semiconductor sensor for contact pressure measurement

      SENSORS AND ACTUATORS A-PHYSICAL
    71. Pedersen, S; Hansen, AE; Kristensen, A; Sorensen, CB; Lindelof, PE
      Aharonov-Bohm effect in GaAs/GaAlAs ring interferometers

      MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY
    72. Diaconescu, D; Hoch, S; Heidtkamp, C; Meier, C; Reuter, D; Wieck, AD
      A new peak in the bend resistance of a four-terminal device written by FIBimplantation

      PHYSICA B
    73. Litwin-Staszewska, E; Trzeciakowski, W; Dmowski, L; Stankevic, V; Zytkiewicz, Z
      Pressure sensors based on AlGaAs doped with Te and Sn

      HIGH PRESSURE RESEARCH
    74. Zhang, L; Dai, N; Hu, GJ; Chen, LY; Tamargo, MC
      Investigation of persistent photoconductivity in a Ge-doped ZnSe epilayer

      JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS
    75. Sfigakis, F; Paddon, P; Pacradouni, V; Adamcyk, M; Nicoll, C; Cowan, AR; Tiedje, T; Young, JF
      Near-infrared refractive index of thick, laterally oxidized AlGaAs cladding layers

      JOURNAL OF LIGHTWAVE TECHNOLOGY
    76. Perez, PF; de Oca, ACM; Castellanos, CR
      Edge mode waves in superlattices in quantum Hall effect regime

      PHYSICA STATUS SOLIDI B-BASIC RESEARCH
    77. Algora, C
      Characterizing the layer properties of AlGaAs/GaAs heteroface solar cell structures by specular spectral reflectance

      JOURNAL OF ELECTRONIC MATERIALS
    78. Kulbachinskii, VA; Kytin, VG; Golikov, AV; Lunin, RA; van Schaijk, RTF; de Visser, A; Senichkin, AP; Bugaev, AS
      Wavelength dependent negative and positive persistent photoconductivity inSn delta-doped GaAs structures

      SEMICONDUCTOR SCIENCE AND TECHNOLOGY
    79. Kunets, VP; Kissel, H; Muller, U; Walther, C; Masselink, WT; Mazur, YI; Tarasov, GG; Zhuchenko, ZY; Lavoric, S; Valakh, MY
      Thickness dependence of disorder in pseudomorphic modulation-doped AlxGa1-xAs/InyGa1-yAs/GaAs heterostructures

      SEMICONDUCTOR SCIENCE AND TECHNOLOGY
    80. Giri, PK; Mohapatra, YN
      Capacitance transient spectroscopy models of coupled trapping kinetics among multiple defect states: Application to the study of trapping kinetics ofdefects in heavy-ion-damaged silicon

      PHYSICAL REVIEW B
    81. Gourdon, C; Martins, D; Lavallard, P; Ivchenko, EL; Zheng, YL; Planel, R
      AlAs-monolayer dependence of the Gamma-X coupling in GaAs-AlAs type-II heterostructures

      PHYSICAL REVIEW B
    82. Lyo, SK
      Energy transfer of excitons between quantum wells separated by a wide barrier

      PHYSICAL REVIEW B
    83. Kozhevnikov, M
      Feasibility of optically detected cyclotron resonance to study electron mobility in ultrapure GaAs

      PHYSICAL REVIEW B
    84. Reimand, I; Aaviksoo, J
      Exciton interaction with hot electrons in GaAs

      PHYSICAL REVIEW B
    85. Madhavi, S; Venkataraman, V; Sturm, JC; Xie, YH
      Low- and high-field transport properties of modulation-doped Si/SiGe and Ge/SiGe heterostructures: Effect of phonon confinement in germanium quantum wells

      PHYSICAL REVIEW B
    86. Zeisel, R; Bayerl, MW; Goennenwein, STB; Dimitrov, R; Ambacher, O; Brandt, MS; Stutzmann, M
      DX-behavior of Si in AlN

      PHYSICAL REVIEW B
    87. Karpov, SY; Makarov, YN
      Indium segregation kinetics in InGaAs ternary compounds

      THIN SOLID FILMS
    88. Ebert, M; Bell, KA; Yoo, SD; Flock, K; Aspnes, DE
      In situ monitoring of MOVPE growth by combined spectroscopic ellipsometry and reflectance-difference spectroscopy

      THIN SOLID FILMS
    89. Djurisic, AB; Li, EH
      Optical dielectric function of semiconductors

      THIN SOLID FILMS
    90. Soh, YA; Aeppli, G; Zimmermann, FM; Isaacs, ED; Frenkel, AI
      X-ray excitation of DX centers in Si-doped Al0.35Ga0.65As

      SURFACE SCIENCE
    91. Kim, TW; Han, SY; Park, HL
      Temperature coefficient of the space-charge scattering mobility dependent on the Ge doping concentration in In0.5Ga0.5P epilayers grown on GaAs (100)substrates

      SOLID STATE COMMUNICATIONS
    92. Vanhoucke, T; Hayne, M; Moshchalkov, VV; Henini, M
      Energy levels of negatively charged excitons in high magnetic fields

      SOLID STATE COMMUNICATIONS
    93. Sun, KW; Chang, HY; Wang, CM; Song, TS; Wang, SY; Lee, CP
      Raman and hot electron-neutral acceptor luminescence studies of electron-optical phonon interactions in GaAs/AlxGa1-xAs quantum wells

      SOLID STATE COMMUNICATIONS
    94. Rivera-Alvarez, Z; Hernandez, L; Becerril, M; Picos-Vega, A; Zelaya-Angel, O; Ramirez-Bon, R; Vargas-Garcia, JR
      DX centers and persistent photoconductivity in CdTe-In films

      SOLID STATE COMMUNICATIONS
    95. Song, AM; Omling, P
      Strong, ultranarrow peaks of longitudinal and Hall resistances in the regime of breakdown of the quantum Hall effect

      PHYSICAL REVIEW LETTERS
    96. Koonen, JJ; Buhmann, H; Molenkamp, LW
      Probing the potential landscape inside a two-dimensional electron gas

      PHYSICAL REVIEW LETTERS
    97. Djurisic, AB; Fritz, T; Leo, K
      Modeling the optical constants of organic thin films: application to 3,4,9,10-perylenetetracarboxylic dianhydride (PTCDA)

      OPTICS COMMUNICATIONS
    98. Onopko, DE; Ryskin, AI
      Chemical bonding and structure of metastable impurity centers in semiconductor crystals

      JOURNAL OF STRUCTURAL CHEMISTRY
    99. Sun, KW; Wang, CM; Chang, HY; Wang, SY; Lee, CP
      Optical phonon emission in GaAs/AlAs and GaAs/Al0.7Ga0.3As multiple quantum well structures

      JOURNAL OF LUMINESCENCE
    100. Pedersen, S; Hansen, AE; Kristensen, A; Sorensen, CB; Lindelof, PE
      Quantum interference above 4.2K in a GaAl0.3As0.7/GaAs Aharonov-Bohm ring

      JOURNAL OF LOW TEMPERATURE PHYSICS


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Documento generato il 07/08/20 alle ore 05:41:45