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La ricerca find articoli where soggetti phrase all words 'ALUMINUM NITRIDE' sort by level,fasc_key/DESCEND, pagina_ini_num/ASCEND ha restituito 753 riferimenti
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    1. Yu, YD; Hundere, AM; Hoier, R; Dunin-Borkowski, RE; Einarsrud, MA
      Microstructural characterization and microstructural effects on the thermal conductivity of AlN(Y2O3) ceramics

      JOURNAL OF THE EUROPEAN CERAMIC SOCIETY
    2. Lii, DF; Huang, JL; Chang, ST
      The mechanical properties of AlN/Al composites manufactured by squeeze casting

      JOURNAL OF THE EUROPEAN CERAMIC SOCIETY
    3. Asai, H; Iwase, N; Suga, T
      Influence of ceramic surface treatment on peel-off strength between aluminum nitride and epoxy-modified polyaminobismaleimide adhesive

      IEEE TRANSACTIONS ON ADVANCED PACKAGING
    4. Kandalam, AK; Blanco, MA; Pandey, R
      Theoretical study of structural and vibrational properties of Al3N3, Ga3N3, and In3N3

      JOURNAL OF PHYSICAL CHEMISTRY B
    5. Dweck, J; Aderne, RS; Shanefield, DJ
      Aluminum nitride oxidation by simultaneous TG and DTA

      JOURNAL OF THERMAL ANALYSIS AND CALORIMETRY
    6. Akiyoshi, M; Yano, T; Jenkins, ML
      A structural model of defects in beta-Si3N4 produced by neutron irradiation

      PHILOSOPHICAL MAGAZINE A-PHYSICS OF CONDENSED MATTER STRUCTURE DEFECTS ANDMECHANICAL PROPERTIES
    7. Lloyd, SJ; Tricker, DM; Barber, ZH; Blamire, MG
      Growth of niobium nitride/aluminium nitride trilayers and multilayers

      PHILOSOPHICAL MAGAZINE A-PHYSICS OF CONDENSED MATTER STRUCTURE DEFECTS ANDMECHANICAL PROPERTIES
    8. Boey, F; Cao, L; Khor, KA; Tok, A
      Phase reaction and sintering behavior of a Al2O3-20wt%AlN-5wt%Y2O3 system

      ACTA MATERIALIA
    9. Trinkler, L; Botter-Jensen, L; Christensen, P; Berzina, B
      Stimulated luminescence of AlN ceramics induced by ultraviolet radiation

      RADIATION MEASUREMENTS
    10. Akiyama, T; Hirai, Y; Ishikawa, N
      Combustion synthesis of aluminum nitride from dross

      MATERIALS TRANSACTIONS
    11. Reeber, RR; Wang, K
      High temperature elastic constant prediction of some group III-nitrides

      MRS INTERNET JOURNAL OF NITRIDE SEMICONDUCTOR RESEARCH
    12. Timoshkin, AY; Bettinger, HF; Schaefer, HF
      DFT modeling of chemical vapor deposition of GaN from organogallium precursors. 2. Structures of the oligomers and thermodynamics of the association processes

      JOURNAL OF PHYSICAL CHEMISTRY A
    13. Timoshkin, AY; Suvorov, AV; Schaefer, HF
      Structural and thermodynamic characteristics of compounds X2MYH2 (M = Al, Ga, In; X = F, Cl, Br. I; Y=N, P, As) formed by hydrogen halide eliminationfrom donor-acceptor complexes X3MYH3

      RUSSIAN JOURNAL OF GENERAL CHEMISTRY
    14. Bruls, RJ; Hintzen, HT; de With, G; Metselaar, R
      The temperature dependence of the Young's modulus of MgSiN2, AlN and Si3N4

      JOURNAL OF THE EUROPEAN CERAMIC SOCIETY
    15. Sbaizero, O; Pezzotti, G
      Residual stresses and R-curve behavior of AlN/Mo composite

      JOURNAL OF THE EUROPEAN CERAMIC SOCIETY
    16. Lobl, HP; Klee, M; Milsom, R; Dekker, R; Metzmacher, C; Brand, W; Lok, P
      Materials for bulk acoustic wave (BAW) resonators and filters

      JOURNAL OF THE EUROPEAN CERAMIC SOCIETY
    17. Wang, HB; Han, JC; Li, ZQ; Du, SY
      Effect of additives on self-propagating high-temperature synthesis of AlN

      JOURNAL OF THE EUROPEAN CERAMIC SOCIETY
    18. Trinkler, L; Berzina, B
      Radiation induced recombination processes in AIN ceramics

      JOURNAL OF PHYSICS-CONDENSED MATTER
    19. Zheng, JC; Wang, HQ; Huan, CHA; Wee, ATS
      The structural and electronic properties of (AlN)(x)(C-2)(1-x) and (AlN)(x)(BN)(1-x) alloys

      JOURNAL OF PHYSICS-CONDENSED MATTER
    20. Sun, J; Wu, JD; Ying, ZF; Shi, W; Zhou, ZY; Wang, KL; Ding, XM; Li, FM
      Low-temperature synthesis of AlN films through electron cyclotron resonance plasma-aided reactive pulsed laser deposition

      APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING
    21. Di Lello, BC; Moura, FJ; Solorzano, IG
      Synthesis and characterization of nano-scale aluminum nitride produced from vapor phase

      MATERIALS SCIENCE & ENGINEERING C-BIOMIMETIC AND SUPRAMOLECULAR SYSTEMS
    22. Teofilov, N; Thonke, K; Sauer, R; Ebling, DG; Kirste, L; Benz, KW
      Near band-edge transitions in AlN thin films grown on different substrates

      DIAMOND AND RELATED MATERIALS
    23. Goldsby, JC
      Micro-mechanical and electrical properties of monolithic aluminum nitride at high temperatures

      JOURNAL OF ALLOYS AND COMPOUNDS
    24. Zhu, S; Wlosinski, W
      Joining of AlN ceramic to metals using sputtered Al or Ti film

      JOURNAL OF MATERIALS PROCESSING TECHNOLOGY
    25. Prin, GR; Baffie, T; Jeymond, M; Eustathopoulos, N
      Contact angles and spreading kinetics of Al and Al-Cu alloys sintered AlN

      MATERIALS SCIENCE AND ENGINEERING A-STRUCTURAL MATERIALS PROPERTIES MICROSTRUCTURE AND PROCESSING
    26. Wetzel, C; Amano, T; Akasaki, I; Ager, JW; Grzegory, I; Meyer, BK
      DX-like behavior of oxygen in GaN

      PHYSICA B
    27. Oh, JH; Cho, SH; Jonas, JJ
      AlN precipitation in dual-phase 3% Si electrical steels

      ISIJ INTERNATIONAL
    28. Hyodo, T; Kano, M; Shimizu, Y; Egashira, M
      Preparation of aluminum nitride powder from aluminum chloride/ethylenediamine precursor

      JOURNAL OF THE CERAMIC SOCIETY OF JAPAN
    29. Tajika, M; Nomura, H; Matsubara, H; Rafaniello, W
      Experimental and computational study of grain growth and microstructures in AlN composite ceramics

      JOURNAL OF THE CERAMIC SOCIETY OF JAPAN
    30. Ide, T; Komeya, K; Tatami, J; Meguro, T; Naito, M; Hotta, T
      Effect of Y2O3 addition on synthesis of AIN powder by carbothermal reduction-nitridation of Al2O3

      JOURNAL OF THE CERAMIC SOCIETY OF JAPAN
    31. Watari, K
      High thermal conductivity non-oxide ceramics

      JOURNAL OF THE CERAMIC SOCIETY OF JAPAN
    32. Kang, HC; Seo, SH; Noh, DY
      X-ray scattering study on the structural evolution of AlN/sapphire(0001) films during radiofrequency sputter growth

      JOURNAL OF MATERIALS RESEARCH
    33. Liu, J; Zhang, X; Zhang, YJ; He, RR; Zhu, J
      Novel synthesis of AlN nanowires with controlled diameters

      JOURNAL OF MATERIALS RESEARCH
    34. Groza, JR; Garcia, M; Schneider, JA
      Surface effects in field-assisted sintering

      JOURNAL OF MATERIALS RESEARCH
    35. Hirao, K; Watari, K; Hayashi, H; Kitayama, M
      High thermal conductivity silicon nitride ceramic

      MRS BULLETIN
    36. Imanaka, Y; Notis, MR
      Metallization of high thermal conductivity materials

      MRS BULLETIN
    37. Engelmark, F; Iriarte, GF; Katardjiev, IV; Ottosson, M; Muralt, P; Berg, S
      Structural and electroacoustic studies of AIN thin films during low temperature radio frequency sputter deposition

      JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS
    38. Butcher, KSA; Tansley, TL; Prince, K; Leech, PW
      Predeposition ultraviolet treatment for adhesion improvement of thin filmson mercury cadmium telluride

      JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS
    39. Wu, L; Wu, S; Song, HT
      Influence of sputtering pressure on physical structure of AIN thin films prepared on Y-128 degrees LiNbO3 by rf magnetron sputtering

      JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS
    40. Wu, HS; Xu, XH; Zhang, CJ; Zhang, FQ
      The bonding behavior of polycyclic compounds XmAlnNnHm (X = Cl, H)

      ACTA CHIMICA SINICA
    41. Sun, J; Wu, JD; Ling, H; Shi, W; Ying, ZF; Li, FM
      Photoluminescence and its time evolution of AlN thin films

      PHYSICS LETTERS A
    42. Kim, JK; Jeong, SH
      Effects of deposition parameters on AlN film growth using reactive DC magnetron sputtering

      JOURNAL OF THE KOREAN PHYSICAL SOCIETY
    43. Ruterana, P; Nouet, G
      Atomic structure of extended defects in wurtzite GaN epitaxial layers

      PHYSICA STATUS SOLIDI B-BASIC RESEARCH
    44. Chu, AK; Chao, CH; Lee, FZ; Huang, HL
      Deposition of polycrystalline AlN thin films by coherent magnetron sputtering at temperatures < 80 degrees C

      JOURNAL OF ELECTRONIC MATERIALS
    45. Chang, C; Patzer, ABC; Sedlmayr, E; Steinke, T; Sulzle, D
      A density functional study of small (AlN)(x) clusters: structures, energies, and frequencies

      CHEMICAL PHYSICS
    46. Baumann, H; Heinemeyer, P; Staiger, W; Topfer, M; Unger, K; Muller, D
      Optimized cooling systems for high-power semiconductor devices

      IEEE TRANSACTIONS ON INDUSTRIAL ELECTRONICS
    47. Cheng, F; Sugahara, Y; Kuroda, K
      Preparation and pyrolysis of a blended precursor possessing Ti-N and Al-N bonds

      APPLIED ORGANOMETALLIC CHEMISTRY
    48. Tajika, M; Matsubara, H; Rafaniello, W; Hojo, J
      Development of synergistic AlN ceramics by simultaneous addition of BN andTiN

      JOURNAL OF MATERIALS SCIENCE LETTERS
    49. Bardos, L; Barankova, H
      Hollow cathode PVD of nitride and oxide films at low substrate temperatures

      SURFACE & COATINGS TECHNOLOGY
    50. Okumiya, M; Tsunekawa, Y; Murayama, T
      Surface modification of aluminum using ion nitriding and fluidized bed

      SURFACE & COATINGS TECHNOLOGY
    51. Vacandio, F; Massiani, Y; Eyraud, M; Rossi, S; Fedrizzi, L
      Influence of various nickel under-layers on the corrosion behaviour of AlNfilms deposited by reactive sputtering

      SURFACE & COATINGS TECHNOLOGY
    52. Yamanishi, T; Hara, Y; Morita, R; Azuma, K; Fujiwara, E; Yatsuzuka, M
      Profile of implanted nitrogen ions in Al alloy for mold materials

      SURFACE & COATINGS TECHNOLOGY
    53. Wu, Y; Miao, WG; Zhou, HP
      Formation of aluminum nitride clusters by cyclic vapor-solid process

      MATERIALS CHEMISTRY AND PHYSICS
    54. Bockowski, M
      Growth and doping of GaN and AlN single crystals under high nitrogen pressure

      CRYSTAL RESEARCH AND TECHNOLOGY
    55. Wang, HH
      Properties of AlN(100) thin films prepared by reactive laser ablation

      MODERN PHYSICS LETTERS B
    56. Kato, R; Maesono, A; Tye, RP
      Thermal conductivity measurement of submicron-thick films deposited on substrates by modified ac calorimetry (laser-heating Angstrom method)

      INTERNATIONAL JOURNAL OF THERMOPHYSICS
    57. Bitterlich, B; Peters, L; Soldan, C; Heinrich, JG
      Preceramic polymers as laminating systems for the fabrication of tape-castAIN multilayer components

      CFI-CERAMIC FORUM INTERNATIONAL
    58. Sciti, D; Bellosi, A
      Laser-induced surface drilling of silicon carbide

      APPLIED SURFACE SCIENCE
    59. Adam, T; Kolodzey, J; Swann, CP; Tsao, MW; Rabolt, JF
      The electrical properties of MIS capacitors with ALN gate dielectrics

      APPLIED SURFACE SCIENCE
    60. Dimitrova, VI; Van Patten, PG; Richardson, H; Kordesch, ME
      Photo-, cathodo-, and electroluminescence studies of sputter deposited AlN: Er thin films

      APPLIED SURFACE SCIENCE
    61. Gunster, J; Gorke, R; Heinrich, JG; Souda, R
      Pulsed laser ablation of dense sintered AlN and AlN powder samples studiedby time-of-flight mass spectroscopy

      APPLIED SURFACE SCIENCE
    62. Wu, S; Wu, L; Chang, JH; Chang, FC
      SAW modes on ST-X quartz with an AlN layer

      MATERIALS LETTERS
    63. Tseng, WJ; Tsai, CJ; Hsi, CS
      Influence of particulate Al2O3 addition on interfacial microstructure and electrical sheet resistance of thick film metallized aluminum nitride substrates

      MATERIALS LETTERS
    64. Tsuchida, T; Suzuki, K; Naganuma, H
      Low-temperature formation of ternary carbide Fe3M3C (M = Mo, W) assisted by mechanical activation

      SOLID STATE IONICS
    65. Xu, XH; Wu, HS; Zhang, FQ; Zhang, CJ; Jin, ZH
      (ClAlNH)(n) cluster formation in the gas phase for the chemical vapor deposition of AlN thin films

      JOURNAL OF MOLECULAR STRUCTURE-THEOCHEM
    66. Guo, QX; Nishio, M; Ogawa, H; Yoshida, A
      Temperature effect on the electronic structure of AlN - art. no. 113105

      PHYSICAL REVIEW B
    67. Goni, AR; Siegle, H; Syassen, K; Thomsen, C; Wagner, JM
      Effect of pressure on optical phonon modes and transverse effective charges in GaN and AlN - art. no. 035205

      PHYSICAL REVIEW B
    68. Bernardini, F; Fiorentini, V; Vanderbilt, D
      Accurate calculation of polarization-related quantities in semiconductors - art. no. 193201

      PHYSICAL REVIEW B
    69. Prokofyeva, T; Seon, M; Vanbuskirk, J; Holtz, M; Nikishin, SA; Faleev, NN; Temkin, H; Zollner, S
      Vibrational properties of AlN grown on (111)-oriented silicon - art. no. 125313

      PHYSICAL REVIEW B
    70. Kim, JU; Ko, Y
      Electrothermal-chemical synthesis of nanocrystalline aluminum nitride using a metal vapor pulsed plasma jet

      IEEE TRANSACTIONS ON PLASMA SCIENCE
    71. Grendahl, S; Bert, R; Cho, K; Bar-On, I
      The effects of residual stress, loading, and crack geometry on SERE fracture toughness test results

      JOURNAL OF TESTING AND EVALUATION
    72. Kosmac, T; Novak, S; Krnel, K
      Hydrolysis assisted solidification process and its use in ceramic wet forming

      ZEITSCHRIFT FUR METALLKUNDE
    73. Xu, XH; Wu, HS; Zhang, CJ; Jin, ZH
      Morphological properties of AIN piezoelectric thin films deposited by DC reactive magnetron sputtering

      THIN SOLID FILMS
    74. Takikawa, H; Kimura, K; Miyano, R; Sakakibara, T; Bendavid, A; Martin, PJ; Matsumuro, A; Tsutsumi, K
      Effect of substrate bias on AlN thin film preparation in shielded reactivevacuum are deposition

      THIN SOLID FILMS
    75. Ning, J; Xu, S; Ostrikov, KN; Chai, JW; Li, YN; Ling, KM; Lee, S
      Synthesis and structural properties of Al-C-N-O composite thin films

      THIN SOLID FILMS
    76. Choi, JH; Lee, JY; Kim, JH
      Phase evolution in aluminum nitride thin films on Si(100) prepared by radio frequency magnetron sputtering

      THIN SOLID FILMS
    77. Lim, WT; Son, BK; Kang, DH; Lee, CH
      Structural properties of AlN films grown on Si, Ru/Si and ZnO/Si substrates

      THIN SOLID FILMS
    78. Liaw, HM; Venugopal, R; Wan, J; Melloch, MR
      Influence of the AlN buffer layer growth on AlGaN/GaN films deposited on (111)Si substrates

      SOLID-STATE ELECTRONICS
    79. Aouas, MR; Sekkal, W; Zaoui, A
      Pressure effect on phonon modes in gallium nitride: a molecular dynamics study

      SOLID STATE COMMUNICATIONS
    80. Bruls, RJ; Hintzen, HT; de With, G; Metselaar, R; van Miltenburg, JC
      The temperature dependence of the Gruneisen parameters of MgSiN2, AlN and beta-Si3N4

      JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS
    81. Tsuchida, T
      Formation of ternary carbide Fe3Mo3C by mechanical activation and subsequent heat treatment

      JOURNAL OF MATERIALS SCIENCE
    82. Kaigawa, K; Shibata, T; Nakamura, Y; Asai, K; Tanaka, M; Sakai, H; Tsurumi, T
      Cracking mechanism in AlN(11(2)over-bar0)/alpha-Al2O3(1(1)over-bar02) heteroepitaxial films grown by MOCVD

      JOURNAL OF MATERIALS SCIENCE
    83. Kuball, M; Hayes, JM; Shi, Y; Edgar, JH; Prins, AD; van Uden, NWA; Dunstan, DJ
      Raman scattering studies on single-crystalline bulk AlN: temperature and pressure dependence of the AlN phonon modes

      JOURNAL OF CRYSTAL GROWTH
    84. Wang, Y; Wai, LY; Liu, H; Zhang, XX; Chang, YC; Luo, HL; Lou, LR; Fang, RC
      MBE grown monocrystalline GaAs films on polycrystalline AlN thick films for power device applications

      JOURNAL OF CRYSTAL GROWTH
    85. Ebling, DG; Kirste, L; Benz, KW; Teofilov, N; Thonke, K; Sauer, R
      Optical properties and ordering of AlxGa1-xN MBE-layers

      JOURNAL OF CRYSTAL GROWTH
    86. Timoshkin, AY; Bettinger, HF; Schaefer, HF
      A theoretical approach to the single-source precursor concept: quantum chemical modeling of gas-phase reactions

      JOURNAL OF CRYSTAL GROWTH
    87. Romanowski, Z; Krukowski, S; Grzegory, I; Porowski, S
      Surface reaction of nitrogen with liquid group III metals

      JOURNAL OF CHEMICAL PHYSICS
    88. Takao, Y; Sando, M
      Flame synthesis of aluminum nitride filler-powder

      JOURNAL OF CHEMICAL ENGINEERING OF JAPAN
    89. Liu, MS; Bursill, LA; Prawer, S
      Optical phonons of hexagonal AlxGa1-xN: Simulation and experiment

      JOURNAL OF APPLIED PHYSICS
    90. Gyorgy, E; Ristoscu, C; Mihailescu, IN; Klini, A; Vainos, N; Fotakis, C; Ghica, C; Schmerber, G; Faerber, J
      Role of laser pulse duration and gas pressure in deposition of AlN thin films

      JOURNAL OF APPLIED PHYSICS
    91. Bermudez, VM; Wu, CI; Kahn, A
      AlN films on GaN: Sources of error in the photoemission measurement of electron affinity

      JOURNAL OF APPLIED PHYSICS
    92. Laws, GM; Larkins, EC; Harrison, I; Molloy, C; Somerford, D
      Improved refractive index formulas for the AlxGa1-xN and InyGa1-yN alloys

      JOURNAL OF APPLIED PHYSICS
    93. Shelton, BS; Lambert, DJH; Huang, JJ; Wong, MM; Chowdhury, U; Zhu, TG; Kwon, HK; Liliental-Weber, Z; Benarama, M; Feng, M; Dupuis, RD
      Selective area growth and characterization of AlGaN/GaN heterojunction bipolar transistors by metalorganic chemical vapor deposition

      IEEE TRANSACTIONS ON ELECTRON DEVICES
    94. Vacandio, F; Massiani, Y; Gravier, P; Rossi, S; Bonora, PL; Fedrizzi, L
      Improvement of the electrochemical behaviour of AlN films produced by reactive sputtering using various under-layers

      ELECTROCHIMICA ACTA
    95. Kasu, M; Kobayashi, N
      Field-emission characteristics and large current density of heavily Si-doped AlN and AlxGa1-xN (0.38 <= x < 1)

      APPLIED PHYSICS LETTERS
    96. Roucka, R; Tolle, J; Smith, DJ; Crozier, P; Tsong, IST; Kouvetakis, J
      Low-temperature growth of SiCAlN films of high hardness on Si(111) substrates

      APPLIED PHYSICS LETTERS
    97. Kuball, M; Hayes, JM; Prins, AD; van Uden, NWA; Dunstan, DJ; Shi, Y; Edgar, JH
      Raman scattering studies on single-crystalline bulk AlN under high pressures

      APPLIED PHYSICS LETTERS
    98. Grabowski, SP; Schneider, M; Nienhaus, H; Monch, W; Dimitrov, R; Ambacher, O; Stutzmann, M
      Electron affinity of AlxGa1-xN(0001) surfaces

      APPLIED PHYSICS LETTERS
    99. Kasu, M; Kobayashi, N
      Spontaneous ridge-structure formation and large field emission of heavily Si-doped AlN

      APPLIED PHYSICS LETTERS
    100. Recnik, A; Daneu, N; Walther, T; Mader, W
      Structure and chemistry of basal-plane inversion boundaries in antimony oxide-doped zinc oxide

      JOURNAL OF THE AMERICAN CERAMIC SOCIETY


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Documento generato il 27/10/20 alle ore 02:42:00