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La ricerca find articoli where soggetti phrase all words 'ALN' sort by level,fasc_key/DESCEND, pagina_ini_num/ASCEND ha restituito 970 riferimenti
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    1. Yu, YD; Hundere, AM; Hoier, R; Dunin-Borkowski, RE; Einarsrud, MA
      Microstructural characterization and microstructural effects on the thermal conductivity of AlN(Y2O3) ceramics

      JOURNAL OF THE EUROPEAN CERAMIC SOCIETY
    2. Lii, DF; Huang, JL; Chang, ST
      The mechanical properties of AlN/Al composites manufactured by squeeze casting

      JOURNAL OF THE EUROPEAN CERAMIC SOCIETY
    3. Yuan, HR; Lu, DC; Liu, XL; Chen, Z; Han, P; Wang, XH; Wang, D
      Statistical investigation on morphology development of gallium nitride in initial growth stage

      JOURNAL OF CRYSTAL GROWTH
    4. Terai, H; Wang, Z
      Fabrication of NbN single flux quantum (SFQ) circuit and operating properties at 10 K

      ELECTRONICS AND COMMUNICATIONS IN JAPAN PART II-ELECTRONICS
    5. Lai, YH; Yeh, CT; Hwang, JM; Hwang, HL; Chen, CT; Hung, WH
      Sputtering and etching of GaN surfaces

      JOURNAL OF PHYSICAL CHEMISTRY B
    6. Kandalam, AK; Blanco, MA; Pandey, R
      Theoretical study of structural and vibrational properties of Al3N3, Ga3N3, and In3N3

      JOURNAL OF PHYSICAL CHEMISTRY B
    7. Andreeva, AD; O'Reilly, EP
      Theoretical analysis of the electronic structure of truncated-pyramidal GaN/AlN quantum dots

      PHYSICA E
    8. Silverstein, KAT; Shoop, E; Johnson, JE; Retzel, EF
      MetaFam: a unified classification of protein families. I. Overview and statistics

      BIOINFORMATICS
    9. Boey, F; Cao, L; Khor, KA; Tok, A
      Phase reaction and sintering behavior of a Al2O3-20wt%AlN-5wt%Y2O3 system

      ACTA MATERIALIA
    10. Tabbal, M; Merel, P; Chaker, M; Pepin, H
      Pulsed laser deposition of c-axis oriented aluminum nitride thin films on silicon

      EUROPEAN PHYSICAL JOURNAL-APPLIED PHYSICS
    11. Elmazria, O; Assouar, MB
      CVD diamond for surface acoustic wave devices

      VIDE-SCIENCE TECHNIQUE ET APPLICATIONS
    12. Belmonte, T; Poussardin, JY; Lefevre, L; Michel, H
      Aluminium nitride synthesis by RPECVD

      JOURNAL DE PHYSIQUE IV
    13. Cho, MH; Kang, YS; Kim, HY; Lee, PS; Lee, JY
      Enhancement of the chemical stability of hydrogenated aluminum nitride thin films by nitrogen plasma treatment

      ELECTROCHEMICAL AND SOLID STATE LETTERS
    14. Park, JS; Im, YH; Choi, RJ; Hahn, YB; Choi, CS; Lee, SH; Lee, JK
      Plasma chemistries for dry etching of SrBi2Ta2O9 thin films

      ELECTROCHEMICAL AND SOLID STATE LETTERS
    15. Im, YH; Kang, HG; Han, BS; Hahn, YB
      High density plasma etching of Y-Ba-Cu-O superconductors

      ELECTROCHEMICAL AND SOLID STATE LETTERS
    16. Liu, LH; Liu, B; Shi, Y; Edgar, JH
      Growth mode and defects in aluminum nitride sublimed on (0001) 6H-SiC substrates

      MRS INTERNET JOURNAL OF NITRIDE SEMICONDUCTOR RESEARCH
    17. Stepanov, S; Wang, WN; Yavich, BS; Bougrov, V; Rebane, YT; Shreter, YG
      Influence of Poisson's ratio uncertainty on calculations of the bowing parameter for strained InGaN layers

      MRS INTERNET JOURNAL OF NITRIDE SEMICONDUCTOR RESEARCH
    18. Reeber, RR; Wang, K
      High temperature elastic constant prediction of some group III-nitrides

      MRS INTERNET JOURNAL OF NITRIDE SEMICONDUCTOR RESEARCH
    19. Im, YH; Hahn, YB; Pearton, SJ
      Level set approach to simulation of feature profile evolution in a high-density plasma-etching system

      JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B
    20. Grinyaev, SN; Razzhuvalov, AN
      Resonant electron tunneling in GaN/Ga1-xAlxN(0001) strained structures with spontaneous polarization and piezoeffect

      PHYSICS OF THE SOLID STATE
    21. Bumble, B; LeDuc, HG; Stern, JA; Megerian, KG
      Fabrication of Nb/Al-N-x/NbTiN junctions for SIS mixer applications

      IEEE TRANSACTIONS ON APPLIED SUPERCONDUCTIVITY
    22. Uzawa, Y; Kawakami, A; Miki, S; Wang, Z
      Performance of All-NbN quasi-optical SIS mixers for the terahertz band

      IEEE TRANSACTIONS ON APPLIED SUPERCONDUCTIVITY
    23. Terai, H; Wang, Z
      9 K operation of RSFQ logic cells fabricated by NbN integrated circuit technology

      IEEE TRANSACTIONS ON APPLIED SUPERCONDUCTIVITY
    24. Liu, ZR; Chung, DDL
      Development of glass-free metal electrically conductive thick films

      JOURNAL OF ELECTRONIC PACKAGING
    25. Oliveira, IC; Otani, C; Maciel, HS; Massi, M; Noda, LK; Temperini, MLA
      Raman active E-2 modes in aluminum nitride films

      JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS
    26. Bruls, RJ; Hintzen, HT; de With, G; Metselaar, R
      The temperature dependence of the Young's modulus of MgSiN2, AlN and Si3N4

      JOURNAL OF THE EUROPEAN CERAMIC SOCIETY
    27. Sbaizero, O; Pezzotti, G
      Residual stresses and R-curve behavior of AlN/Mo composite

      JOURNAL OF THE EUROPEAN CERAMIC SOCIETY
    28. Amadeh, A; Heshmati-Manesh, S; Labbe, JC; Laimeche, A; Quintard, P
      Wettability and corrosion of TiN, TiN-BN and TiN-AlN by liquid steel

      JOURNAL OF THE EUROPEAN CERAMIC SOCIETY
    29. Kim, YW; Park, HC; Lee, YB; Oh, KD; Stevens, R
      Reaction sintering and microstructural development in the system Al2O3-AlN

      JOURNAL OF THE EUROPEAN CERAMIC SOCIETY
    30. Wang, MC; Yang, CC; Wu, NC
      Densification and structural development in the sintering of AlN ceramics with CaCN2 additives

      JOURNAL OF THE EUROPEAN CERAMIC SOCIETY
    31. Wang, HB; Han, JC; Li, ZQ; Du, SY
      Effect of additives on self-propagating high-temperature synthesis of AlN

      JOURNAL OF THE EUROPEAN CERAMIC SOCIETY
    32. Jung, WS; Ahn, SK
      Synthesis of aluminum nitride by a modified carbothermal reduction and nitridation method using basic dicarboxylate Al(III) complexes Al(OH)(Cn+2H2nO4)center dot xH(2)O (n=3, 6, 8)

      JOURNAL OF THE EUROPEAN CERAMIC SOCIETY
    33. As, DJ; Kohler, U
      Carbon - an alternative acceptor for cubic GaN

      JOURNAL OF PHYSICS-CONDENSED MATTER
    34. Trinkler, L; Berzina, B
      Radiation induced recombination processes in AIN ceramics

      JOURNAL OF PHYSICS-CONDENSED MATTER
    35. Rerat, M; Cheng, WD; Pandey, R
      First-principles calculations of nonlinear optical susceptibility of inorganic materials

      JOURNAL OF PHYSICS-CONDENSED MATTER
    36. Cao, YG; Chen, XL; Lan, YC; Li, JY; Zhang, Y; Yang, Z; Liang, JK
      Synthesis and Raman characteristics of hexagonal AlxGa1-xN alloy nanocrystalline solids through ammonothermal routes

      APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING
    37. Okamoto, M; Yap, YK; Yoshimura, M; Mori, Y; Sasaki, T
      The ohmic character of doped AlN films

      DIAMOND AND RELATED MATERIALS
    38. Schwarz, R; Niehus, M; Koynov, S; Melo, L; Wang, JG; Cardoso, S; Freitas, PP
      Pulsed sub-band-gap photoexcitation of AlN

      DIAMOND AND RELATED MATERIALS
    39. Goujon, C; Goeuriot, P; Delcroix, P; Le Caer, G
      Mechanical alloying during cryomilling of a 5000 Al alloy/AlN powder: the effect of contamination

      JOURNAL OF ALLOYS AND COMPOUNDS
    40. Kim, HH; Ju, BK; Lee, YH; Lee, SH; Lee, JK; Kim, SW
      A noble suspended type thin film resonator (STFR) using the SOI technology

      SENSORS AND ACTUATORS A-PHYSICAL
    41. Fan, ZY; Newman, N
      Experimental determination of the rates of decomposition and cation desorption from AlN surfaces

      MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY
    42. Kirste, L; Ebling, DG; Haug, C; Brenn, R; Benz, KW; Tillmann, K
      Structural quality and ordering of MBE grown AlxGa1-xN-layers

      MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY
    43. Kikuchi, A; Yamada, T; Nakamura, S; Kusakabe, K; Sugihara, D; Kishino, K
      Improvement of electrical property and surface morphology of GaN grown by RF-plasma assisted molecular beam epitaxy by introduction of multiple AlN intermediate layer

      MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY
    44. Gleize, J; Frandon, J; Demangeot, F; Renucci, MA; Kuball, M; Hayes, JM; Widmann, F; Daudin, B
      Angular dispersion of polar phonons in a hexagonal GaN-AlN superlattice

      MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY
    45. Potin, V; Gil, B; Charar, S; Ruterana, P; Nouet, G
      HREM study of basal stacking faults in GaN layers grown over sapphire substrate

      MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY
    46. Ruterana, P; Chen, J; Nouet, G
      The atomic structure and properties of wurtzite GaN epitaxial layers

      MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY
    47. Maeda, N; Saitoh, T; Tsubaki, K; Nishida, T; Kobayashi, N
      Two-dimensional electron gas transport properties in AlGaN/GaN single- anddouble-heterostructure field effect transistors

      MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY
    48. Goujon, C; Goeuriot, P
      Solid state sintering and high temperature compression properties of Al-alloy5000/AlN nanocomposites

      MATERIALS SCIENCE AND ENGINEERING A-STRUCTURAL MATERIALS PROPERTIES MICROSTRUCTURE AND PROCESSING
    49. Khor, KA; Boey, FYC; Zhao, XL; Cao, LH
      Aluminium nitride by plasma spraying of an Al2O3-C-Sm2O3 system

      MATERIALS SCIENCE AND ENGINEERING A-STRUCTURAL MATERIALS PROPERTIES MICROSTRUCTURE AND PROCESSING
    50. Prin, GR; Baffie, T; Jeymond, M; Eustathopoulos, N
      Contact angles and spreading kinetics of Al and Al-Cu alloys sintered AlN

      MATERIALS SCIENCE AND ENGINEERING A-STRUCTURAL MATERIALS PROPERTIES MICROSTRUCTURE AND PROCESSING
    51. Wetzel, C; Amano, T; Akasaki, I; Ager, JW; Grzegory, I; Meyer, BK
      DX-like behavior of oxygen in GaN

      PHYSICA B
    52. Watari, K
      High thermal conductivity non-oxide ceramics

      JOURNAL OF THE CERAMIC SOCIETY OF JAPAN
    53. Kang, JY; Ogawa, T
      Threading dislocations with edge components in GaN epilayers grown on Al2O3 substrates

      JOURNAL OF MATERIALS RESEARCH
    54. Lin, CN; Chung, SL
      Combustion synthesis of aluminum nitride powder using additives

      JOURNAL OF MATERIALS RESEARCH
    55. Kang, HC; Seo, SH; Noh, DY
      X-ray scattering study on the structural evolution of AlN/sapphire(0001) films during radiofrequency sputter growth

      JOURNAL OF MATERIALS RESEARCH
    56. Zanghi, D; Traverse, A; Gautrot, S; Kaitasov, O
      Characterization of bond formation in SiC and Si3N4 implanted with Ti, Fe,and Co

      JOURNAL OF MATERIALS RESEARCH
    57. Lin, CN; Chung, SL
      Combustion synthesis method for synthesis of aluminum nitride powder usingaluminum containers

      JOURNAL OF MATERIALS RESEARCH
    58. Hirao, K; Watari, K; Hayashi, H; Kitayama, M
      High thermal conductivity silicon nitride ceramic

      MRS BULLETIN
    59. Engelmark, F; Iriarte, GF; Katardjiev, IV; Ottosson, M; Muralt, P; Berg, S
      Structural and electroacoustic studies of AIN thin films during low temperature radio frequency sputter deposition

      JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS
    60. Iosad, NN; Jackson, BD; Polyakov, SN; Dmitriev, PN; Klapwijk, TM
      Reactive magnetron sputter-deposition of NbN and (Nb,Ti)N films related tosputtering source characterization and optimization

      JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS
    61. Hahn, YB; Im, YH; Park, JS; Nahm, KS; Lee, YS
      Effect of dry etching conditions on surface morphology and optical properties of GaN films in chlorine-based inductively coupled plasmas

      JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS
    62. Im, YH; Park, JS; Choi, CS; Choi, RJ; Hahn, YB; Lee, SH; Lee, JK
      Dry etching of SrBi2Ta2O9 thin films in Cl-2/NF3/O-2/Ar inductively coupled plasmas

      JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS
    63. Guan, ZP; Cai, AL; Porter, H; Cabalu, J; Chen, J; Huang, S; Giedd, RE
      GaN grown on two-step cleaned C-terminated 6H-SiC by molecular-beam epitaxy

      JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS
    64. Majewski, JA; Zandler, G; Vogl, P
      Bands, bonds, and polarizations in nitrides - from electronic orbitals to electronic devices

      ACTA PHYSICA POLONICA A
    65. Im, YH; Choi, CS; Hahn, YB
      High density plasma etching of GaN films in Cl-2/Ar discharges with a low-frequency-excited DC bias

      JOURNAL OF THE KOREAN PHYSICAL SOCIETY
    66. Kim, KS; Lee, WH; Kim, CS; Yang, GM; Hong, CH; Suh, EK; Lim, KY; Lee, HJ; Cho, HK; Lee, JY; Yang, M; Lee, YH; Seo, JM
      Nano-scale island (dot)-induced optical emission in InGaN quantum wells

      JOURNAL OF THE KOREAN PHYSICAL SOCIETY
    67. Park, SH
      Spontaneous polarization effects on electronic and optical properties of wurtzite GaN/AlGaN quantum well lasers

      JOURNAL OF THE KOREAN PHYSICAL SOCIETY
    68. Vaschenko, G; Patel, D; Menoni, CS; Gardner, NF; Sun, J; Gotz, W; Tome, CN; Clausen, B
      Pressure dependence of piezoelectric field in InGaN/GaN quantum wells

      PHYSICA STATUS SOLIDI B-BASIC RESEARCH
    69. Wang, HQ; Zheng, JC; Wee, ATS; Huan, CHA
      Study of electronic properties and bonding configuration at the BN/SiC interface

      JOURNAL OF ELECTRON SPECTROSCOPY AND RELATED PHENOMENA
    70. Kipshidze, G; Nikishin, S; Kuryatkov, V; Choi, K; Gherasoiu, I; Prokofyeva, T; Holtz, M; Temkin, H; Hobart, KD; Kub, FJ; Fatemi, M
      High quality AlN and GaN grown on compliant Si/SiC substrates by gas source molecular beam epitaxy

      JOURNAL OF ELECTRONIC MATERIALS
    71. Sanchez, AM; Pacheco, FJ; Molina, SI; Stemmer, J; Aderhold, J; Graul, J
      Critical thickness of high-temperature AlN interlayers in GaN on sapphire (0001)

      JOURNAL OF ELECTRONIC MATERIALS
    72. Schweitz, KO; Mohney, SE
      Phase equilibria in transition metal Al-Ga-N systems and thermal stabilityof contacts to AlGaN

      JOURNAL OF ELECTRONIC MATERIALS
    73. Chen, SC; Kuo, PC; Lie, CT; Hua, JT
      Microstructure and coercivity of granular FePt-AlN thin films

      JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS
    74. Mandal, S; Sanyal, AS; Dhargupta, KK; Ghatak, S
      Gas pressure sintering of beta SiC-gamma-AlON composite in nitrogen/argon environment

      CERAMICS INTERNATIONAL
    75. Fornari, R; Bosi, M; Bersani, D; Attolini, G; Lottici, PP; Pelosi, C
      Characterization of HVPE GaN layers by atomic force microscopy and Raman spectroscopy

      SEMICONDUCTOR SCIENCE AND TECHNOLOGY
    76. Wu, S; Wu, L; Chang, FC; Shen, YT; Chang, JH
      The structural and acoustic properties of sputtered aluminum nitride on ST-X quartz

      JOURNAL OF MATERIALS SCIENCE LETTERS
    77. Manova, D; Huber, P; Mandl, S; Rauschenbach, B
      Filtered arc deposition and implantation of aluminium nitride

      SURFACE & COATINGS TECHNOLOGY
    78. Cremer, R; Reichert, K; Neuschutz, D
      A composition spread approach to the optimization of (Ti,Al) N hard coatings deposited by DC and bipolar pulsed magnetron sputtering

      SURFACE & COATINGS TECHNOLOGY
    79. Yamanishi, T; Hara, Y; Morita, R; Azuma, K; Fujiwara, E; Yatsuzuka, M
      Profile of implanted nitrogen ions in Al alloy for mold materials

      SURFACE & COATINGS TECHNOLOGY
    80. Shen, B; Zhang, R; Shi, Y; Zheng, YD; Someya, T; Arakawa, Y
      Growth and characterization of modulation-doped AlxGa1-xN/GaN heterostructures

      CHINESE PHYSICS LETTERS
    81. Hwang, JS; Lee, CH; Yang, FH; Chen, KH; Hwa, LG; Yang, YJ; Chen, LC
      Resistive heated MOCVD deposition of InN films

      MATERIALS CHEMISTRY AND PHYSICS
    82. Seong, S; Hwang, JS
      Molecular orbital calculations for the formation of GaN layers on ultra-thin AlN/6H-SiC surface using alternating pulsative supply of gaseous trimethyl gallium (TMG) and NH3

      BULLETIN OF THE KOREAN CHEMICAL SOCIETY
    83. Mandal, S; Seal, A; Dalui, SK; Dey, AK; Ghatak, S; Mukhopadhyay, AK
      Mechanical characteristics of microwave sintered silicon carbide

      BULLETIN OF MATERIALS SCIENCE
    84. Bockowski, M
      Growth and doping of GaN and AlN single crystals under high nitrogen pressure

      CRYSTAL RESEARCH AND TECHNOLOGY
    85. Kityk, IV; Malachowski, MJ
      Electronic structure and x-ray photoelectron spectroscopy of wurtzite GaxAl1-xN solid alloy

      CRYSTAL RESEARCH AND TECHNOLOGY
    86. Wang, HH
      Properties of AlN(100) thin films prepared by reactive laser ablation

      MODERN PHYSICS LETTERS B
    87. Fabreguette, F; Imhoff, L; Heintz, O; Maglione, M; Domenichini, B; de Lucas, MCM; Sibillot, P; Bourgeois, S; Sacilotti, M
      Structural and in depth characterization of newly designed conducting/insulating TiNxOy/TiO2 multilayers obtained by one step LP-MOCVD growth

      APPLIED SURFACE SCIENCE
    88. Gunster, J; Gorke, R; Heinrich, JG; Souda, R
      Pulsed laser ablation of dense sintered AlN and AlN powder samples studiedby time-of-flight mass spectroscopy

      APPLIED SURFACE SCIENCE
    89. Telbizova, T; Chevolleau, T; Moller, W
      Nitrogen incorporation and loss during ion nitriding of Al

      NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS
    90. Rong, B; Reeves, RJ; Brown, SA; Alkaisi, MM; van der Drift, E; Cheung, R; Sloof, WG
      A study of reactive ion etching damage effects in GaN

      MICROELECTRONIC ENGINEERING
    91. Wu, S; Wu, L; Chang, JH; Chang, FC
      SAW modes on ST-X quartz with an AlN layer

      MATERIALS LETTERS
    92. Tseng, WJ; Tsai, CJ; Hsi, CS
      Influence of particulate Al2O3 addition on interfacial microstructure and electrical sheet resistance of thick film metallized aluminum nitride substrates

      MATERIALS LETTERS
    93. Binggeli, N; Ferrara, P; Baldereschi, A
      Band-offset trends in nitride heterojunctions - art. no. 245306

      PHYSICAL REVIEW B
    94. Wang, T; Bai, J; Sakai, S
      Modulation-doping influence on the photoluminescence from the two-dimensional electron gas of AlxGa1-xN/GaN heterostructures - art. no. 205320

      PHYSICAL REVIEW B
    95. Ohtake, A; Nakamura, J; Terauchi, M; Sato, F; Tanaka, M; Kimura, K; Yao, T
      Wurtzite-zinc-blende polytypism in ZnSe on GaAs(111)A - art. no. 195325

      PHYSICAL REVIEW B
    96. Bayerl, MW; Brandt, MS; Graf, T; Ambacher, O; Majewski, JA; Stutzmann, M; As, DJ; Lischka, K
      g values of effective mass donors in AlxGa1-xN alloys - art. no. 165204

      PHYSICAL REVIEW B
    97. Rashkeev, SN; Lambrecht, WRL
      Second-harmonic generation of I-III-VI2 chalcopyrite semiconductors: Effects of chemical substitutions - art. no. 165212

      PHYSICAL REVIEW B
    98. Wang, F; Chen, AB
      Calculations of acceptor ionization energies in GaN - art. no. 125212

      PHYSICAL REVIEW B
    99. Prokofyeva, T; Seon, M; Vanbuskirk, J; Holtz, M; Nikishin, SA; Faleev, NN; Temkin, H; Zollner, S
      Vibrational properties of AlN grown on (111)-oriented silicon - art. no. 125313

      PHYSICAL REVIEW B
    100. Limpijumnong, S; Lambrecht, WRL
      Theoretical study of the relative stability of wurtzite and rocksalt phases in MgO and GaN - art. no. 104103

      PHYSICAL REVIEW B


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Documento generato il 05/08/20 alle ore 11:52:08