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La ricerca find articoli where soggetti phrase all words '1.3-MU-M' sort by level,fasc_key/DESCEND, pagina_ini_num/ASCEND ha restituito 314 riferimenti
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    1. Neto, JAM; Aranha, N; Sombra, ASB
      An ultra stable glass system for optical fiber devices

      PHYSICAL CHEMISTRY CHEMICAL PHYSICS
    2. Choi, YG; Park, BJ; Kim, KH; Heo, J
      Pr3+- and Pr3+/Er3+-doped selenide glasses for potential 1.6 mu m optical amplifier materials

      ETRI JOURNAL
    3. Fischer, MO; Reinhardt, M; Forchel, A
      Room-temperature operation of GaInAsN-GaAs laser diodes in the 1.5-mu m range

      IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS
    4. Nakagawa, S; Hall, E; Almuneau, G; Kim, JK; Buell, DA; Kroemer, H; Coldren, LA
      1.55-mu m InP-lattice-matched VCSELs with AlGaAsSb-AlAsSb DBRs

      IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS
    5. Nishiyama, N; Arai, M; Shinada, S; Azuchi, M; Miyamoto, T; Koyama, F; Iga, K
      Highly strained GaInAs-GaAs quantum-well vertical-cavity surface-emitting laser on GaAs (311)B substrate for stable polarization operation

      IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS
    6. Shimizu, H; Kumada, K; Uchiyama, S; Kasukawa, A
      High-performance CW 1.26-mu m GaInNAsSb-SQW ridge lasers

      IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS
    7. Gotthold, D; Govindaraju, S; Reifsnider, J; Kinsey, G; Campbell, J; Holmes, A
      Molecular-beam epitaxy growth of Ga(In)NAs/GaAs heterostructures for photodiodes

      JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B
    8. Krestnikov, IL; Cherkashin, NA; Sizov, DS; Bedarev, DA; Kochnev, IV; Lantratov, VM; Ledentsov, NN
      InGaAs nanodomains formed in situ on the surface of (Al,Ga)As

      TECHNICAL PHYSICS LETTERS
    9. Maleev, NA; Egorov, AY; Zhukov, AE; Kovsh, AR; Vasil'ev, AP; Ustinov, VM; Ledentsov, NN; Alferov, ZI
      Comparative analysis of long-wavelength (1.3 mu m) VCSELs on GaAs substrates

      SEMICONDUCTORS
    10. Sakharov, AV; Krestnikov, IL; Maleev, NA; Kovsh, AR; Zhukov, AE; Tsatsul'nikov, AF; Ustinov, VM; Ledentsov, NN; Bimberg, D; Lott, JA; Alferov, ZI
      1.3 mu m vertical microcavities with InAs/InGaAs quantum dots and devices based on them

      SEMICONDUCTORS
    11. Chang, CA; Hwang, FC; Wu, ZR; Wang, PY
      Oscillatory characteristic temperature of InAs quantum-dot laser

      IEEE PHOTONICS TECHNOLOGY LETTERS
    12. Klopf, F; Krebs, R; Reithmaier, JP; Forchel, A
      High-temperature operating 1.3-mu m quantum-dot lasers for telecommunication applications

      IEEE PHOTONICS TECHNOLOGY LETTERS
    13. Luo, XD; Xu, ZY; Pan, Z; Li, LH; Lin, YW; Ge, WK
      Optical properties and band lineup in GaNxAs1-x/GaAs single quantum wells

      JOURNAL OF INFRARED AND MILLIMETER WAVES
    14. Tu, CW
      III-N-V low-bandgap nitrides and their device applications

      JOURNAL OF PHYSICS-CONDENSED MATTER
    15. Dainesi, P; Thevenaz, L; Robert, P
      Intensity modulation in two Mach-Zehnder interferometers using plasma dispersion in silicon-on-insulator

      APPLIED PHYSICS B-LASERS AND OPTICS
    16. Jaque, D
      Self-frequency-sum mixing in Nd doped nonlinear crystals for laser generation in the three fundamental colours - The NYAB case

      JOURNAL OF ALLOYS AND COMPOUNDS
    17. Shin, YB; Heo, J; Kim, HS
      Enhancement of the 1.31-mu m emission properties of Dy3+-doped Ge-Ga-S glasses with the addition of alkali halides

      JOURNAL OF MATERIALS RESEARCH
    18. Ramos, AY; Cardona, MG; Tolentino, HCN; Alves, MCM; Watanabe, N; Alves, OL; Barbosa, LC
      CsCl-modified Ga2S3-La2S3 glasses: Structural approach by x-ray absorptionspectroscopy

      JOURNAL OF MATERIALS RESEARCH
    19. Potter, R; Mazzucato, S; Balkan, N; Adams, MJ; Chalker, PR; Joyce, TB; Bullough, TJ
      The effect of In/N ratio on the optical quality and lasing threshold in GaxIn1-xAs1-yNy/GaAs laser structures

      SUPERLATTICES AND MICROSTRUCTURES
    20. Nostrand, MC; Page, RH; Payne, SA; Isaenko, LI; Yelisseyev, AP
      Optical properties of Dy3+- and Nd3+-doped KPb2Cl5

      JOURNAL OF THE OPTICAL SOCIETY OF AMERICA B-OPTICAL PHYSICS
    21. Schweizer, T; Goutaland, R; Martins, E; Hewak, DW; Brocklesby, WS
      Site-selective spectroscopy in dysprosium-doped chalcogenide glasses for 1.3-mu m optical-fiber amplifiers

      JOURNAL OF THE OPTICAL SOCIETY OF AMERICA B-OPTICAL PHYSICS
    22. Egorov, AY; Bedarev, D; Bernklau, D; Dumitras, G; Riechert, H
      Self-assembled InAs quantum dots in an InGaAsN matrix on GaAs

      PHYSICA STATUS SOLIDI B-BASIC RESEARCH
    23. Ustinov, VM; Zhukov, AE; Kovsh, AR; Maleev, NA; Mikhrin, SS; Volovik, BV; Musikhin, YG; Tsatsul'nikov, AF; Maximov, MV; Shernyakov, YM; Alferov, ZI; Ledentsov, NN; Bimberg, D; Lott, J
      Quantum dot lasers of NIR range based on GaAs

      IZVESTIYA AKADEMII NAUK SERIYA FIZICHESKAYA
    24. Egorov, AY; Zhukov, AE; Ustinov, VM
      1.3 mu m GaAs-based quantum well and quantum dot lasers: Comparative analysis

      JOURNAL OF ELECTRONIC MATERIALS
    25. Volovik, BV; Kovsh, AR; Passenberg, W; Kuenzel, H; Grote, N; Cherkashin, NA; Musikhin, YG; Ledentsov, NN; Bimberg, D; Ustinov, VM
      Optical and structural properties of self-organized InGaAsN/GaAs nanostructures

      SEMICONDUCTOR SCIENCE AND TECHNOLOGY
    26. Krestnikov, IL; Maleev, NA; Sakharov, AV; Kovsh, AR; Zhukov, AE; Tsatsul'nikov, AF; Ustinov, VM; Alferov, ZI; Ledentsov, NN; Bimberg, D; Lott, JA
      1.3 mu m resonant-cavity InGaAs/GaAs quantum dot light-emitting devices

      SEMICONDUCTOR SCIENCE AND TECHNOLOGY
    27. Balda, R; Sanz, M; Mendioroz, A; Fernandez, J; Griscom, LS; Adam, JL
      Infrared-to-visible upconversion in Nd3+-doped chalcohalide glasses - art.no. 144101

      PHYSICAL REVIEW B
    28. Calarco, R; Fiordelisi, M; Lagomarsino, S; Scarinci, F
      Near-infrared metal-semiconductor-metal photodetector integrated on silicon

      THIN SOLID FILMS
    29. Potter, RJ; Balkan, N; Marie, X; Carrere, H; Bedel, E; Lacoste, G
      Interaction strength between the highly localised nitrogen states and the extended semiconductor matrix states in GaInNAs

      PHYSICA STATUS SOLIDI A-APPLIED RESEARCH
    30. Qui, J; Shojiya, M; Kawamoto, Y; Kadono, K; Fukumi, K
      Lower non-radiative transition probability in Er3+-doped bromide-modified sulfide glasses

      JOURNAL OF NON-CRYSTALLINE SOLIDS
    31. Schimmel, RC; Faber, AJ; de Waardt, H; Beerkens, RGC; Khoe, GD
      Development of germanium gallium sulphide glass fibres for the 1.31 mu m praseodymium-doped fibre amplifier

      JOURNAL OF NON-CRYSTALLINE SOLIDS
    32. Zhang, YG; Chen, JX; Chen, YQ; Qi, M; Li, AZ; Frojdh, K; Stoltz, B
      Characteristics of strain compensated 1.3 mu m InAsP/InGaAsP ridge waveguide laser diodes grown by gas source MBE

      JOURNAL OF CRYSTAL GROWTH
    33. Egorov, AY; Bernklau, D; Borchert, B; Illek, S; Livshits, D; Rucki, A; Schuster, M; Kaschner, A; Hoffmann, A; Dumitras, G; Amann, MC; Riechert, H
      Growth of high quality InGaAsN heterostructures and their laser application

      JOURNAL OF CRYSTAL GROWTH
    34. Yeh, NT; Nee, TE; Chyi, JI; Chia, CT; Hsu, TM; Huang, CC
      Improved electroluminescence of InAs quantum dots with strain reducing layer

      JOURNAL OF CRYSTAL GROWTH
    35. Zhuang, QD; Yoon, SF; Zheng, HQ
      Growth and emission tuning of InAs/InP quantum dots superlattice

      JOURNAL OF CRYSTAL GROWTH
    36. Ustinov, VM; Zhukov, AE; Maleev, NA; Kovsh, AR; Mikhrin, SS; Volovik, BV; Musikhin, YG; Shernyakov, YM; Maximov, MV; Tsatsul'nikov, AF; Ledentsov, NN; Alferov, ZI; Lott, JA; Bimberg, D
      1.3 mu m InAs/GaAs quantum dot lasers and VCSELs grown by molecular beam epitaxy

      JOURNAL OF CRYSTAL GROWTH
    37. Thomson, JD; Summers, HD; Smowton, PM; Herrmann, E; Blood, P; Hopkinson, M
      Temperature dependence of the lasing wavelength of InGaAs quantum dot lasers

      JOURNAL OF APPLIED PHYSICS
    38. Masini, G; Colace, L; Assanto, G; Luan, HC; Kimerling, LC
      High-performance p-i-n Ge on Si photodetectors for the near infrared: Frommodel to demonstration

      IEEE TRANSACTIONS ON ELECTRON DEVICES
    39. Maximov, MV; Asryan, LV; Shernyakov, YM; Tsatsul'nikov, AF; Kaiander, IN; Nikolaev, VV; Kovsh, AR; Mikhrin, SS; Ustinov, VM; Zhukov, AE; Alferov, ZI; Ledenstov, NN; Bimberg, D
      Gain and threshold characteristics of long wavelength lasers based on InAs/GaAs quantum dots formed by activated alloy phase separation

      IEEE JOURNAL OF QUANTUM ELECTRONICS
    40. Huang, H; Deppe, DG
      Rate equation model for nonequilibrium operating conditions in a self-organized quantum-dot laser

      IEEE JOURNAL OF QUANTUM ELECTRONICS
    41. Zhou, WD; Bhattacharya, P; Qasaimeh, O
      InP-based cylindrical microcavity light-emitting diodes

      IEEE JOURNAL OF QUANTUM ELECTRONICS
    42. Kuriki, K; Nishihara, S; Nishizawa, Y; Tagaya, A; Okamoto, Y; Koike, Y
      Fabrication and optical properties of neodymium-, praseodymium- and erbium-chelates-doped plastic optical fibres

      ELECTRONICS LETTERS
    43. Jackson, AW; Naone, RL; Dalberth, MJ; Smith, JM; Malone, KJ; Kisker, DW; Klem, JF; Choquette, KD; Serkland, DK; Geib, KM
      OC-48 capable InGaAsN vertical cavity lasers

      ELECTRONICS LETTERS
    44. Hakkarainen, T; Toivonen, J; Sopanen, M; Lipsanen, H
      Self-assembled GaIn(N)As quantum dots: Enhanced luminescence at 1.3 mu m

      APPLIED PHYSICS LETTERS
    45. De Giorgi, M; Lingk, C; von Plessen, G; Feldmann, J; De Rinaldis, S; Passaseo, A; De Vittorio, M; Cingolani, R; Lomascolo, M
      Capture and thermal re-emission of carriers in long-wavelength InGaAs/GaAsquantum dots

      APPLIED PHYSICS LETTERS
    46. Qiu, Y; Gogna, P; Forouhar, S; Stintz, A; Lester, LF
      High-performance InAs quantum-dot lasers near 1.3 mu m

      APPLIED PHYSICS LETTERS
    47. Chen, JX; Oesterle, U; Fiore, A; Stanley, RP; Ilegems, M; Todaro, T
      Matrix effects on the structural and optical properties of InAs quantum dots

      APPLIED PHYSICS LETTERS
    48. Li, W; Jouhti, T; Peng, CS; Konttinen, J; Laukkanen, P; Pavelescu, EM; Dumitrescu, M; Pessa, M
      Low-threshold-current 1.32-mu m GaInNAs/GaAs single-quantum-well lasers grown by molecular-beam epitaxy

      APPLIED PHYSICS LETTERS
    49. Zhang, L; Boggess, TF; Gundogdu, K; Flatte, ME; Deppe, DG; Cao, C; Shchekin, OB
      Excited-state dynamics and carrier capture in InGaAs/GaAs quantum dots

      APPLIED PHYSICS LETTERS
    50. Borri, P; Schneider, S; Langbein, W; Woggon, U; Zhukov, AE; Ustinov, VM; Ledentsov, NN; Alferov, ZI; Ouyang, D; Bimberg, D
      Ultrafast carrier dynamics and dephasing in InAs quantum-dot amplifiers emitting near 1.3-mu m-wavelength at room temperature

      APPLIED PHYSICS LETTERS
    51. Saint-Girons, G; Patriarche, G; Largeau, L; Coelho, J; Mereuta, A; Moison, JM; Gerard, JM; Sagnes, I
      Bimodal distribution of Indium composition in arrays of low-pressure metalorganic-vapor-phase-epitaxy grown InGaAs/GaAs quantum dots

      APPLIED PHYSICS LETTERS
    52. Boggess, TF; Zhang, L; Deppe, DG; Huffaker, DL; Cao, C
      Spectral engineering of carrier dynamics in In(Ga)As self-assembled quantum dots

      APPLIED PHYSICS LETTERS
    53. Yang, X; Heroux, JB; Mei, LF; Wang, WI
      InGaAsNSb/GaAs quantum wells for 1.55 mu m lasers grown by molecular-beam epitaxy

      APPLIED PHYSICS LETTERS
    54. Schneider, HC; Fischer, AJ; Chow, WW; Klem, JF
      Temperature dependence of laser threshold in an InGaAsN vertical-cavity surface-emitting laser

      APPLIED PHYSICS LETTERS
    55. Hofmann, M; Wagner, A; Ellmers, C; Schlichenmeier, C; Schafer, S; Hohnsdorf, F; Koch, J; Stolz, W; Koch, SW; Ruhle, WW; Hader, J; Moloney, JV; O'Reilly, EP; Borchert, B; Egorov, AY; Riechert, H
      Gain spectra of (GaIn)(NAs) laser diodes for the 1.3-mu m-wavelength regime

      APPLIED PHYSICS LETTERS
    56. Huang, XD; Stintz, A; Li, H; Lester, LF; Cheng, J; Malloy, KJ
      Passive mode-locking in 1.3 mu m two-section InAs quantum dot lasers

      APPLIED PHYSICS LETTERS
    57. Smowton, PM; Herrmann, E; Ning, Y; Summers, HD; Blood, P; Hopkinson, M
      Optical mode loss and gain of multiple-layer quantum-dot lasers

      APPLIED PHYSICS LETTERS
    58. Li, LH; Pan, Z; Xu, YQ; Du, Y; Lin, YW; Wu, RH
      Effects of rapid thermal annealing and SiO2 encapsulation on GaNAs/GaAs single quantum wells grown by plasma-assisted molecular-beam epitaxy

      APPLIED PHYSICS LETTERS
    59. Kornienko, AY; Emge, TJ; Brennan, JG
      Chalcogen-rich lanthanide clusters: Cluster reactivity and the influence of ancillary ligands on structure

      JOURNAL OF THE AMERICAN CHEMICAL SOCIETY
    60. Kondow, M; Kitatani, T
      In situ annealing of GaInNAs up to 600 degrees C

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
    61. Kawaguchi, M; Miyamoto, T; Gouardes, E; Schlenker, D; Kondo, T; Koyama, F; Iga, K
      Lasing characteristics of low-threshold GaInNAs lasers grown by metalorganic chemical vapor deposition

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS
    62. Makino, S; Miyamoto, T; Kageyama, T; Ikenaga, Y; Arai, M; Koyama, F; Iga, K
      Composition dependence of thermal annealing effect on 1.3 mu m GaInNAs/GaAs quantum well lasers grown by chemical beam epitaxy

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS
    63. Sylvestre, T; Dinda, PT; Maillotte, H; Lantz, E; Moubissi, AB; Pitois, S
      Wavelength conversion from 1.3 mu m to 1.5 mu m in single-mode optical fibres using Raman-assisted three-wave mixing

      JOURNAL OF OPTICS A-PURE AND APPLIED OPTICS
    64. Masini, G; Colace, L; Galluzzi, F; Assanto, G
      Near-infrared photodetectors based on polycrystalline Ge evaporated on Si < 100 > substrates

      PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICSELECTRONIC OPTICAL AND MAGNETIC PROPERTIES
    65. Giannini, C; Carlino, E; Tapfer, L; Hohnsdorf, F; Koch, J; Stolz, W
      Structural properties of (GaIn)(AsN)/GaAs MQW structures grown by MOVPE

      MRS INTERNET JOURNAL OF NITRIDE SEMICONDUCTOR RESEARCH
    66. Harris, JS
      Tunable long-wavelength vertical-cavity lasers: The engine of next generation optical networks?

      IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS
    67. Towe, E; Pan, D
      Semiconductor quantum-dot nanostructures: Their application in a new classof infrared photodetectors

      IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS
    68. Bhattacharya, P; Klotzkin, D; Qasaimeh, O; Zhou, WD; Krishna, S; Zhu, DH
      High-speed modulation and switching characteristics of In(Ga)As-Al(Ga)As self-organized quantum-dot lasers

      IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS
    69. Huffaker, DL; Park, G; Zou, ZZ; Shchekin, OB; Deppe, DG
      Continuous-wave low-threshold performance of 1.3-mu m InGaAs-GaAs quantum-dot lasers

      IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS
    70. Sugawara, M; Mukai, K; Nakata, Y; Otsubo, K; Ishikawa, H
      Performance and physics of quantum-dot lasers with self-assembled columnar-shaped and 1.3-mu m emitting InGaAs quantum dots

      IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS
    71. Nakazawa, M; Kubota, H; Suzuki, K; Yamada, E; Sahara, A
      Ultrahigh-speed long-distance TDM and WDM soliton transmission technologies

      IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS
    72. Silva, MTC; Zucker, JE; Carrion, LR; Joyner, CH; Dentai, AG
      Growth optimization for p-n junction placement in the integration of heterojunction bipolar transistors and quantum well modulators on InP

      IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS
    73. Jiang, RL; Lo, ZY; Chen, WM; Zang, L; Zhu, SM; Liu, XB; Cheng, XM; Chen, ZZ; Chen, P; Han, P; Zheng, YD
      Normal-incidence SiGe/Si photodetectors with different buffer layers

      JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B
    74. Stintz, A; Liu, GT; Gray, AL; Spillers, R; Delgado, SM; Malloy, KJ
      Characterization of InAs quantum dots in strained InxGa1-xAs quantum wells

      JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B
    75. Volovik, BV; Kovsh, AR; Passenberg, W; Kuenzel, H; Ledentsov, NN; Ustinov, VM
      Long-wavelength emission in InGaAsN/GaAs heterostructures with quantum wells

      TECHNICAL PHYSICS LETTERS
    76. Leshko, AY; Lyutetskii, AV; Pikhtin, NA; Skrynnikov, GV; Sokolova, ZN; Tarasov, IS; Fetisova, NV
      On the internal quantum efficiency and carrier ejection in InGaAsP/InP-based quantum-well lasers

      SEMICONDUCTORS
    77. Nakazawa, M; Kubota, H; Suzuki, K; Yamada, E; Sahara, A
      Recent progress in soliton transmission technology

      CHAOS
    78. Kondow, M; Kitatani, T; Nakahara, K; Tanaka, T
      Temperature dependence of lasing wavelength in a GaInNAs laser diode

      IEEE PHOTONICS TECHNOLOGY LETTERS
    79. Stintz, A; Liu, GT; Li, H; Lester, LF; Malloy, KJ
      Low-threshold current density 1.3-mu m InAs quantum-dot lasers with the dots-in-a-well (DWELL) structure

      IEEE PHOTONICS TECHNOLOGY LETTERS
    80. Par, G; Shchekin, OB; Huffaker, DL; Deppe, DG
      Low-threshold oxide-confined 1.3-mu m quantum-dot laser

      IEEE PHOTONICS TECHNOLOGY LETTERS
    81. Nakajima, H; Leroy, A; Charil, J; Robein, D
      Versatile in-line transceiver chip operating in two full-duplex modes at 1.3 and 1.55 mu m

      IEEE PHOTONICS TECHNOLOGY LETTERS
    82. Jayaraman, V; Goodnough, TJ; Beam, TL; Ahedo, FM; Maurice, RA
      Continuous-wave operation of single-transverse-mode 1310-nm VCSELs up to 115 degrees C

      IEEE PHOTONICS TECHNOLOGY LETTERS
    83. Ustinov, VM; Zhukov, AE; Kovsh, AR; Mikhrin, SS; Maleev, NA; Volovik, BV; Musikhin, YG; Shernyakov, YM; Kondat'eva, EY; Maximov, MV; Tsatsul'nikov, AF; Ledentsov, NN; Alferov, ZI; Lott, JA; Bimberg, D
      Long-wavelength quantum dot lasers on GaAs substrates

      NANOTECHNOLOGY
    84. Kwasny, M; Mierczyk, Z; Stepien, R; Jedrzejewski, K
      Nd3+-, Er3+- and Pr3+-doped fluoride glasses for laser applications

      JOURNAL OF ALLOYS AND COMPOUNDS
    85. Moorthy, LR; Rao, TS; Janardhanam, K; Radhapathy, A
      Optical absorption and emission properties of Pr(III) in alkali chloroborophosphate glasses

      JOURNAL OF ALLOYS AND COMPOUNDS
    86. Li, C; Yang, QQ; Wang, HJ; Cheng, BW; Yu, JZ; Wang, QM
      Characteristics of circular waveguide photodetectors using SiGe/Si multiple quantum wells

      OPTICAL MATERIALS
    87. Sweeney, SJ; Higashi, T; Adams, AR; Uchida, T; Fujii, T
      A comparison of AlGaInAs and InGaAsP-based 1.3 mu m semiconductor lasers using high pressure

      HIGH PRESSURE RESEARCH
    88. Janz, S; Baribeau, JM; Lockwood, DJ; McCaffrey, JP; Moisa, S; Rowell, NL; Xu, DX; Lafontaine, H; Pearson, MRT
      Si/Si1-xGex photodetectors using three-dimensional growth modes to enhancephotoresponse at lambda=1550 nm

      JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS
    89. Maximov, MV; Ledentsov, NN; Ustinov, VM; Alferov, ZI; Bimberg, D
      GaAs-based 1.3 mu m InGaAs quantum dot lasers: A status report

      JOURNAL OF ELECTRONIC MATERIALS
    90. Maximov, MV; Krestnikov, IL; Shernyakov, YM; Zhukov, AE; Maleev, NA; Musikhin, YG; Ustinov, VM; Alferov, ZI; Chernyshov, AY; Ledentsov, NN; Bimberg, D; Maka, T; Torres, CMS
      InGaAs-GaAs quantum dots for application in long wavelength (1.3 mu m) resonant vertical cavity enhanced devices

      JOURNAL OF ELECTRONIC MATERIALS
    91. Ustinov, VM; Zhukov, AE
      GaAs-based long-wavelength lasers

      SEMICONDUCTOR SCIENCE AND TECHNOLOGY
    92. Hasse, A; Volz, K; Schaper, AK; Koch, J; Hohnsdorf, F; Stolz, W
      TEM investigations of (GaIn)(NAs)/GaAs multi-quantum wells grown by MOVPE

      CRYSTAL RESEARCH AND TECHNOLOGY
    93. Li, D; Huang, DX
      Study of semiconductor laser diode with circularly symmetric waveguide

      INTERNATIONAL JOURNAL OF INFRARED AND MILLIMETER WAVES
    94. Maximov, MV; Tsatsul'nikov, AF; Volovik, BV; Bedarev, DA; Shernyakov, YM; Kaiander, IN; Kondrat'eva, EY; Zhukov, AE; Kovsh, AR; Maleev, NA; Mikhrin, SS; Ustinov, VM; Musikhin, YG; Kop'ev, PS; Alferov, ZI; Heitz, R; Ledentsov, NN; Bimberg, D
      Optical properties of quantum dots formed by activated spinodal decomposition for GaAs-based lasers emitting at similar to 1.3 mu m

      MICROELECTRONIC ENGINEERING
    95. Maximov, MV; Tsatsul'nikov, AF; Volovik, BV; Sizov, DS; Shernyakov, YM; Kaiander, IN; Zhukov, AE; Kovsh, AR; Mikhrin, SS; Ustinov, VM; Alferov, ZI; Heitz, R; Shchukin, VA; Ledentsov, NN; Bimberg, D; Musikhin, YG; Neumann, W
      Tuning quantum dot properties by activated phase separation of an InGa(Al)As alloy grown on InAs stressors

      PHYSICAL REVIEW B
    96. Moon, JA; Schaafsma, DT
      Chalcogenide fibers: An overview of selected applications

      FIBER AND INTEGRATED OPTICS
    97. West, YD; Schweizer, T; Brady, DJ; Hewak, DW
      Gallium lanthanum sulphide fibers for infrared transmission

      FIBER AND INTEGRATED OPTICS
    98. Zhuang, QD; Yoon, SF; Zheng, HQ
      Arsenic/phosphorus exchange and wavelength tuning of in situ annealed InAs/InP quantum dot superlattice

      SOLID STATE COMMUNICATIONS
    99. Tanabe, S; Kouda, T; Hanada, T
      Energy transfer and 1.3 mu m emission in Pr-Yb codoped tellurite

      JOURNAL OF NON-CRYSTALLINE SOLIDS
    100. Kadono, K; Yazawa, T; Shojiya, M; Kawamoto, Y
      Judd-Ofelt analysis and luminescence property of Tm3+ in Ga2S3-GeS2-La2S3 glasses

      JOURNAL OF NON-CRYSTALLINE SOLIDS


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Documento generato il 07/08/20 alle ore 03:50:26