Catalogo Articoli (Spogli Riviste)

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La ricerca find articoli where authors phrase all words 'Qiao, D' sort by level,fasc_key/DESCEND, pagina_ini_num/ASCEND ha restituito 17 riferimenti
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    1. Qiao, D; Stratagouleas, ED; Martinez, JD
      Activation and role of mitogen-activated protein kinases in deoxycholic acid-induced apoptosis

      CARCINOGENESIS
    2. Qiao, D; Seidler, FJ; Slotkin, TA
      Developmental neurotoxicity of chlorpyrifos modeled in vitro: Comparative effects of metabolites and other cholinesterase inhibitors on DNA synthesisin PC12 and C6 cells

      ENVIRONMENTAL HEALTH PERSPECTIVES
    3. Qiao, D; Jia, L; Yu, LS; Asbeck, PM; Lau, SS; Lim, SH; Liliental-Weber, Z; Haynes, TE; Barner, JB
      Ta-based interface ohmic contacts to AlGaN/GaN heterostructures

      JOURNAL OF APPLIED PHYSICS
    4. Lim, SH; Washburn, J; Liliental-Weber, Z; Qiao, D
      Microstructural evidence on electrical properties of Ta/Ti/Al and Ti/Ta/Alohmic contacts to n-AlGaN/GaN

      APPLIED PHYSICS LETTERS
    5. Michel, A; Hanser, D; Davis, RF; Qiao, D; Lau, SS; Yu, LS; Sun, W; Asbeck, P
      Growth and characterization of piezoelectrically enhanced acceptor-type AlGaN/GaN heterostructures

      MRS INTERNET JOURNAL OF NITRIDE SEMICONDUCTOR RESEARCH
    6. Qiao, D; Yu, LS; Lau, SS; Lin, JY; Jiang, HX; Haynes, TE
      A study of the Au/Ni ohmic contact on p-GaN

      JOURNAL OF APPLIED PHYSICS
    7. Qiao, D; Yu, LS; Lau, SS; Redwing, JM; Lin, JY; Jiang, HX
      Dependence of Ni/AlGaN Schottky barrier height on Al mole fraction

      JOURNAL OF APPLIED PHYSICS
    8. Yu, LS; Qiao, D; Lau, SS; Redwing, JM; Lin, JY; Jiang, HX
      Measurement of the Al mole fraction of bulk AlGaN and AlGaN/GaN heterostructure by photoconductance method

      JOURNAL OF APPLIED PHYSICS
    9. Dang, XZ; Welty, RJ; Qiao, D; Asbeck, PM; Lau, SS; Yu, ET; Boutros, KS; Redwing, JM
      Fabrication and characterisation of enhanced barrier AlGaN/GaN HFET

      ELECTRONICS LETTERS
    10. Yu, LS; Qiao, D; Lau, SS; Redwing, JM
      A simple reflectance method for estimation of the Al mole fraction of bulkAlGaN and AlGaN/GaN heterostructures

      APPLIED PHYSICS LETTERS
    11. Qiao, D; Guan, ZF; Carlton, J; Lau, SS; Sullivan, GJ
      Low resistance ohmic contacts on AlGaN/GaN structures using implantation and the "advancing" Al/Ti metallization

      APPLIED PHYSICS LETTERS
    12. Cox, DN; Chao, A; Baker, J; Chang, L; Qiao, D; Lin, HF
      A novel class of evolutionarily conserved genes defined by piwi are essential for stem cell self-renewal

      GENES & DEVELOPMENT
    13. LIN H; COX D; PARISI M; KING F; DENG W; CHAO A; SRINIVASAN T; QIAO D; NGO L
      MAKING A DIFFERENCE - THE ASYMMETRIC DIVISION OF STEM-CELLS IN THE GERMLINE

      Developmental biology (Print)
    14. RUVIMOV S; LILIENTALWEBER Z; WASHBURN J; QIAO D; LAU SS; CHU PK
      MICROSTRUCTURE OF TI AL OHMIC CONTACTS FOR N-ALGAN/

      Applied physics letters
    15. YU ET; DANG XZ; YU LS; QIAO D; ASBECK PM; LAU SS; SULLIVAN GJ; BOUTROS KS; REDWING JM
      SCHOTTKY-BARRIER ENGINEERING IN III-V NITRIDES VIA THE PIEZOELECTRIC EFFECT

      Applied physics letters
    16. Yu, LS; Xing, QJ; Qiao, D; Lau, SS; Boutros, KS; Redwing, JM
      Internal photoemission measurement of Schottky barrier height for Ni on AlGaN/GaN heterostructure

      APPLIED PHYSICS LETTERS
    17. YU ET; SULLIVAN GJ; ASBECK PM; WANG CD; QIAO D; LAU SS
      MEASUREMENT OF PIEZOELECTRICALLY INDUCED CHARGE IN GAN ALGAN HETEROSTRUCTURE FIELD-EFFECT TRANSISTORS/

      Applied physics letters


ASDD Area Sistemi Dipartimentali e Documentali, Università di Bologna, Catalogo delle riviste ed altri periodici
Documento generato il 30/10/20 alle ore 06:00:47