Catalogo Articoli (Spogli Riviste)

HELP
ATTENZIONE: attualmente gli articoli Current Contents (fonte ISI) a partire dall'anno 2002 sono consultabili sulla Risorsa On-Line

Le informazioni sugli articoli di fonte ISI sono coperte da copyright

La ricerca find articoli where authors phrase all words 'Kukli, K' sort by level,fasc_key/DESCEND, pagina_ini_num/ASCEND ha restituito 31 riferimenti
Selezionare un intervallo

Per ulteriori informazioni selezionare i riferimenti di interesse.

    1. Rahtu, A; Kukli, K; Ritala, M
      In situ mass spectrometry study on atomic layer deposition from metal (Ti,Ta, and Nb) ethoxides and water

      CHEMISTRY OF MATERIALS
    2. Kukli, K; Aarik, J; Aidla, A; Forsgren, K; Sundqvist, J; Harsta, A; Uustare, T; Mandar, H; Kiisler, AA
      Atomic layer deposition of tantalum oxide thin films from iodide precursor

      CHEMISTRY OF MATERIALS
    3. Schuisky, M; Aarik, J; Kukli, K; Aidla, A; Harsta, A
      Atomic layer deposition of thin films using O-2 as oxygen source

      LANGMUIR
    4. Aarik, J; Aidla, A; Mandar, H; Uustare, T; Kukli, K; Schuisky, M
      Phase transformations in hafnium dioxide thin films grown by atomic layer deposition at high temperatures

      APPLIED SURFACE SCIENCE
    5. Kukli, K; Forsgren, K; Aarik, J; Uustare, T; Aidla, A; Niskanen, A; Ritala, M; Leskela, M; Harsta, A
      Atomic layer deposition of zirconium oxide from zirconium tetraiodide, water and hydrogen peroxide

      JOURNAL OF CRYSTAL GROWTH
    6. Stromme, M; Niklasson, GA; Ritala, M; Leskela, M; Kukli, K
      (Ta1-xNbx)(2)O-5 films produced by atomic layer deposition: Temperature dependent dielectric spectroscopy and room-temperature I-V characteristics

      JOURNAL OF APPLIED PHYSICS
    7. Kukli, K; Ritala, M; Leskela, M
      Development of dielectric properties of niobium oxide, tantalum oxide, andaluminum oxide based nanolayered materials

      JOURNAL OF THE ELECTROCHEMICAL SOCIETY
    8. Kukli, K; Forsgren, K; Ritala, M; Leskela, M; Aarik, J; Harsta, A
      Dielectric properties of zirconium oxide grown by atomic layer deposition from iodide precursor

      JOURNAL OF THE ELECTROCHEMICAL SOCIETY
    9. Kukli, K; Ritala, M; Leskela, M
      Low-temperature deposition of zirconium oxide-based nanocrystalline films by alternate supply of Zr[OC(CH3)(3)](4) and H2O

      CHEMICAL VAPOR DEPOSITION
    10. Kukli, K; Ritala, M; Schuisky, M; Leskela, M; Sajavaara, T; Keinonen, J; Uustare, T; Harsta, A
      Atomic layer deposition of titanium oxide from TiI4 and H2O2

      CHEMICAL VAPOR DEPOSITION
    11. Schuisky, M; Kukli, K; Ritala, M; Harsta, A; Leskela, M
      Atomic layer CVD in the Bi-Ti-O system

      CHEMICAL VAPOR DEPOSITION
    12. Kukli, K; Ritala, M; Leskela, M
      Atomic layer deposition and chemical vapor deposition of tantalum oxide bysuccessive and simultaneous pulsing of tantalum ethoxide and tantalum chloride

      CHEMISTRY OF MATERIALS
    13. Kukli, K; Aidla, A; Aarik, J; Schuisky, M; Harsta, A; Ritala, M; Leskela, M
      Real-time monitoring in atomic layer deposition of TiO2 from TiI4 and H2O-H2O2

      LANGMUIR
    14. Ritala, M; Kukli, K; Rahtu, A; Raisanen, PI; Leskela, M; Sajavaara, T; Keinonen, J
      Atomic layer deposition of oxide thin films with metal alkoxides as oxygensources

      SCIENCE
    15. Kukli, K; Ritala, M; Matero, R; Leskela, M
      Influence of atomic layer deposition parameters on the phase content of Ta2O5 films

      JOURNAL OF CRYSTAL GROWTH
    16. Schuisky, M; Harsta, A; Aidla, A; Kukli, K; Kiisler, AA; Aarik, J
      Atomic layer chemical vapor deposition of TiO2 - Low temperature epitaxy of rutile and anatase

      JOURNAL OF THE ELECTROCHEMICAL SOCIETY
    17. Ritala, M; Juppo, M; Kukli, K; Rahtu, A; Leskela, M
      In situ characterization of atomic layer deposition processes by a mass spectrometer

      JOURNAL DE PHYSIQUE IV
    18. Ritala, M; Kalsi, P; Riihela, D; Kukli, K; Leskela, M; Jokinen, J
      Controlled growth of TaN, Ta3N5, and TaOxNy thin films by atomic layer deposition

      CHEMISTRY OF MATERIALS
    19. Kukli, K; Ritala, M; Leskela, M
      Properties of atomic layer deposited (Ta1-xNbx)(2)O-5 solid solution filmsand Ta2O5-Nb2O5 nanolaminates

      JOURNAL OF APPLIED PHYSICS
    20. KUKLI K; RITALA M; LESKELA M; LAPPALAINEN R
      NIOBIUM OXIDE THIN-FILMS GROWN BY ATOMIC LAYER EPITAXY

      CHEMICAL VAPOR DEPOSITION
    21. KUKLI K; HEIKKINEN H; NYKANEN E; NIINISTO L
      DEPOSITION OF LANTHANUM SULFIDE THIN-FILMS BY ATOMIC LAYER EPITAXY

      Journal of alloys and compounds
    22. KUKLI K; RITALA M; LESKELA M
      PROPERTIES OF (NB1-XTAX)(Z)O-5 SOLID-SOLUTIONS AND (NB1-XTAX)(2)O-5-ZRO2 NANOLAMINATES GROWN BY ATOMIC LAYER EPITAXY

      Nanostructured materials
    23. KUKLI K; RITALA M; LESKELA M; JOKINEN J
      ATOMIC LAYER EPITAXY GROWTH OF ALUMINUM-OXIDE THIN-FILMS FROM A NOVELAL(CH3)(2)CL PRECURSOR AND H2O

      Journal of vacuum science & technology. A. Vacuum, surfaces, and films
    24. KUKLI K; AARIK J; AIDLA A; SIIMON H; RITALA M; LESKELA M
      IN-SITU STUDY OF ATOMIC LAYER EPITAXY GROWTH OF TANTALUM OXIDE THIN-FILMS FROM TA(OC2H5)(5) AND H2O

      Applied surface science
    25. KUKLI K; IHANUS J; RITALA M; LESKELA M
      PROPERTIES OF TA2O3-BASED DIELECTRIC NANOLAMINATES DEPOSITED BY ATOMIC LAYER EPITAXY

      Journal of the Electrochemical Society
    26. AARIK J; KUKLI K; AIDLA A; PUNG L
      MECHANISMS OF SUBOXIDE GROWTH AND ETCHING IN ATOMIC LAYER DEPOSITION OF TANTALUM OXIDE FROM TACL5 AND H2O

      Applied surface science
    27. KUKLI K; IHANUS J; RITALA M; LESKELA M
      TAILORING THE DIELECTRIC-PROPERTIES OF HFO2-TA2O5 NANOLAMINATES

      Applied physics letters
    28. KUKLI K; AARIK J; AIDLA A; KOHAN O; UUSTARE T; SAMMELSELG V
      PROPERTIES OF TANTALUM OXIDE THIN-FILMS GROWN BY ATOMIC LAYER DEPOSITION

      Thin solid films
    29. KUKLI K; RITALA M; LESKELA M
      ATOMIC LAYER EPITAXY GROWTH OF TANTALUM OXIDE THIN-FILMS FROM TA(OC2H5)(5) AND H2O

      Journal of the Electrochemical Society
    30. AARIK J; AIDLA A; KUKLI K
      IN-SITU CHARACTERIZATION OF ALE GROWTH BY REAGENT PULSE DELAY TIMES IN A FLOW-TYPE REACTOR

      Applied surface science
    31. AARIK J; AIDLA A; KUKLI K; UUSTARE T
      DEPOSITION AND ETCHING OF TANTALUM OXIDE-FILMS IN ATOMIC LAYER EPITAXY PROCESS

      Journal of crystal growth


ASDD Area Sistemi Dipartimentali e Documentali, Università di Bologna, Catalogo delle riviste ed altri periodici
Documento generato il 20/10/20 alle ore 09:12:40