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La ricerca find articoli where authors phrase all words 'Hicks, RF' sort by level,fasc_key/DESCEND, pagina_ini_num/ASCEND ha restituito 53 riferimenti
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    1. Hicks, RF; Fu, Q; Li, L; Visbeck, SB; Sun, Y; Li, CH; Law, DC
      The role of atomic surface structure in the metalorganic chemical vapor deposition of III-V compound semiconductors

      JOURNAL DE PHYSIQUE IV
    2. Fu, Q; Begarney, MJ; Li, CH; Law, DC; Hicks, RF
      Phase transitions of III-V compound semiconductor surfaces in the MOVPE environment

      JOURNAL OF CRYSTAL GROWTH
    3. Park, J; Henins, I; Herrmann, HW; Selwyn, GS; Hicks, RF
      Discharge phenomena of an atmospheric pressure radio-frequency capacitive plasma source

      JOURNAL OF APPLIED PHYSICS
    4. Begarney, MJ; Li, CH; Law, DC; Visbeck, SB; Sun, Y; Hicks, RF
      Reflectance difference spectroscopy of mixed phases of indium phosphide (001)

      APPLIED PHYSICS LETTERS
    5. Fu, Q; Li, L; Li, CH; Begarney, MJ; Law, DC; Hicks, RF
      Mechanism of arsine adsorption on the gallium-rich GaAs(001)-(4 x 2) surface

      JOURNAL OF PHYSICAL CHEMISTRY B
    6. Fu, Q; Li, L; Hicks, RF
      Ab initio cluster calculations of hydrogenated GaAs(001) surfaces

      PHYSICAL REVIEW B
    7. Li, L; Fu, Q; Li, CH; Han, BK; Hicks, RF
      Determination of InP(001) surface reconstructions by STM and infrared spectroscopy of adsorbed hydrogen

      PHYSICAL REVIEW B
    8. Jeong, JY; Park, J; Henins, I; Babayan, SE; Tu, VJ; Selwyn, GS; Ding, G; Hicks, RF
      Reaction chemistry in the afterglow of an oxygen-helium, atmospheric-pressure plasma

      JOURNAL OF PHYSICAL CHEMISTRY A
    9. Tu, VJ; Jeong, JY; Schutze, A; Babayan, SE; Ding, G; Selwyn, GS; Hicks, RF
      Tantalum etching with a nonthermal atmospheric-pressure plasma

      JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS
    10. Begarney, MJ; Li, L; Li, CH; Law, DC; Fu, Q; Hicks, RF
      Reflectance-difference spectroscopy of mixed arsenic-rich phases of gallium arsenide (001)

      PHYSICAL REVIEW B
    11. Law, DC; Li, L; Begarney, MJ; Hicks, RF
      Analysis of the growth modes for gallium arsenide metalorganic vapor-phaseepitaxy

      JOURNAL OF APPLIED PHYSICS
    12. Li, CH; Li, L; Fu, Q; Begarney, MJ; Hicks, RF
      Stress-induced anisotropy of phosphorous islands on gallium arsenide

      APPLIED PHYSICS LETTERS
    13. Park, J; Henins, I; Herrmann, HW; Selwyn, GS; Jeong, JY; Hicks, RF; Shim, D; Chang, CS
      An atmospheric pressure plasma source

      APPLIED PHYSICS LETTERS
    14. Fu, Q; Li, L; Begarney, MJ; Han, BK; Law, DC; Hicks, RF
      Site-specific chemistry of gallium arsenide metalorganic chemical vapor deposition

      JOURNAL DE PHYSIQUE IV
    15. Jeong, JY; Babayan, SE; Schutze, A; Tu, VJ; Park, J; Henins, I; Selwyn, GS; Hicks, RF
      Etching polyimide with a nonequilibrium atmospheric-pressure plasma jet

      JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS
    16. Li, L; Han, BK; Fu, Q; Hicks, RF
      Example of a compound semiconductor surface that mimics silicon: The InP(001)-(2x1) reconstruction

      PHYSICAL REVIEW LETTERS
    17. Hicks, RF; Qi, H; Fu, Q; Han, BK; Li, L
      Hydrogen adsorption on GaAs (001) reconstructions

      JOURNAL OF CHEMICAL PHYSICS
    18. Begarney, MJ; Li, L; Han, BK; Law, DC; Li, CH; Yoon, H; Goorsky, MS; Hicks, RF
      Formation of etch pits during carbon doping of gallium arsenide with carbon tetrachloride by metalorganic vapor-phase epitaxy

      JOURNAL OF APPLIED PHYSICS
    19. Gan, S; Li, L; Begarney, MJ; Law, D; Han, BK; Hicks, RF
      Step structure of arsenic-terminated vicinal Ge (100)

      JOURNAL OF APPLIED PHYSICS
    20. Li, L; Han, BK; Law, D; Li, CH; Fu, Q; Hicks, RF
      A phosphorous-rich structure of InP (001) produced by metalorganic vapor-phase epitaxy

      APPLIED PHYSICS LETTERS
    21. JEONG JY; BABAYAN SE; TU VJ; PARK J; HENINS I; HICKS RF; SELWYN GS
      ETCHING MATERIALS WITH AN ATMOSPHERIC-PRESSURE PLASMA-JET

      Plasma sources science & technology
    22. BABAYAN SE; JEONG JY; TU VJ; PARK J; SELWYN GS; HICKS RF
      DEPOSITION OF SILICON DIOXIDE FILMS WITH AN ATMOSPHERIC-PRESSURE PLASMA-JET

      Plasma sources science & technology
    23. LI L; QI H; GAN S; HAN BK; HICKS RF
      SITE-SPECIFIC CHEMISTRY OF CARBON-TETRACHLORIDE DECOMPOSITION ON GAAS(001)

      Applied physics A: Materials science & processing
    24. HAN BK; LI L; KAPPERS MJ; HICKS RF; YOON H; GOORSKY MS; HIGA KT
      CHARACTERIZATION OF INGAAS GAAS(001) FILMS GROWN BY METALORGANIC VAPOR-PHASE EPITAXY USING ALTERNATIVE SOURCES/

      Journal of electronic materials
    25. LI L; HAN BK; HICKS RF; YOON H; GOORSKY MS
      ATOMIC-STRUCTURE OF INXGA1-XAS GAAS(001) (2X4) AND (3X2) SURFACES/

      Ultramicroscopy
    26. Schutze, A; Jeong, JY; Babayan, SE; Park, J; Selwyn, GS; Hicks, RF
      The atmospheric-pressure plasma jet: A review and comparison to other plasma sources

      IEEE TRANSACTIONS ON PLASMA SCIENCE
    27. LI L; HAN B; GAN S; QI H; HICKS RF
      OBSERVATION OF THE ATOMIC SURFACE-STRUCTURE OF GAAS(001) FILMS GROWN BY METALORGANIC VAPOR-PHASE EPITAXY

      Surface science
    28. GAN S; LI L; NGUYEN T; QI H; HICKS RF; YANG M
      SCANNING-TUNNELING-MICROSCOPY OF CHEMICALLY CLEANED GERMANIUM(100) SURFACES

      Surface science
    29. BEGARNEY MJ; WARDDRIP ML; KAPPERS MJ; HICKS RF
      KINETICS OF CARBON-TETRACHLORIDE DECOMPOSITION DURING THE METALORGANIC VAPOR-PHASE EPITAXY OF GALLIUM-ARSENIDE AND INDIUM ARSENIDE

      Journal of crystal growth
    30. KAPPERS MJ; WARDDRIP ML; HICKS RF
      LIGAND-EXCHANGE REACTIONS IN INGAAS METALORGANIC VAPOR-PHASE EPITAXY

      Journal of crystal growth
    31. Li, L; Han, BK; Law, D; Begarney, M; Hicks, RF
      Gallium arsenide and indium arsenide surfaces produced by metalorganic vapor-phase epitaxy

      JOURNAL OF CRYSTAL GROWTH
    32. GAN S; LI L; HICKS RF
      CHARACTERIZATION OF DISLOCATIONS IN GERMANIUM SUBSTRATES INDUCED BY MECHANICAL-STRESS

      Applied physics letters
    33. LI L; GAN S; HAN BK; QI H; HICKS RF
      THE REACTION OF CARBON-TETRACHLORIDE WITH GALLIUM-ARSENIDE(001)

      Applied physics letters
    34. HAN BK; LI L; FU Q; HICKS RF
      STRUCTURE AND COMPOSITION OF THE C(4X4) RECONSTRUCTION FORMED DURING GALLIUM-ARSENIDE METALORGANIC VAPOR-PHASE EPITAXY

      Applied physics letters
    35. Li, L; Han, BK; Hicks, RF
      Surface phases of GaAs and InAs (001) found in the metalorganic vapor-phase epitaxy environment

      APPLIED PHYSICS LETTERS
    36. KAPPERS MJ; WILKERSON KJ; HICKS RF
      EFFECTS OF LIGAND-EXCHANGE REACTIONS ON THE COMPOSITION OF CD1-YZNYTEGROWN BY METALORGANIC VAPOR-PHASE EPITAXY

      JOURNAL OF PHYSICAL CHEMISTRY B
    37. WILKERSON KJ; KAPPERS MJ; HICKS RF
      REACTION CHEMISTRY OF ZNTE METALORGANIC VAPOR-PHASE EPITAXY

      The journal of physical chemistry. A, Molecules, spectroscopy, kinetics, environment, & general theory
    38. KAPPERS MJ; WARDDRIP ML; WILKERSON KJ; HICKS RF
      LIGAND-EXCHANGE REACTIONS IN ORGANOMETALLIC VAPOR-PHASE EPITAXY

      Journal of electronic materials
    39. WARDDRIP ML; KAPPERS MJ; LI L; QI H; HAN BK; GAN S; HICKS RF
      MECHANISM OF DOPING GALLIUM-ARSENIDE WITH CARBON-TETRACHLORIDE DURINGORGANOMETALLIC VAPOR-PHASE EPITAXY

      Journal of electronic materials
    40. LI L; HAN BK; GAN SP; QI HH; HICKS RF
      SCANNING TUNNELING MICROSCOPIC OBSERVATION OF THE ATOMIC-STRUCTURE OFGAAS(001) SURFACE GROWN BY METALORGANIC VAPOR-PHASE EPITAXY

      Science Reports of the Research Institutes, Tohoku University, Series A: Physics, Chemistry, and Metallurgy
    41. AU WK; KAPPERS MJ; HICKS RF
      EVALUATION OF A ZERO-DISCHARGE REACTOR FOR THE CHEMICAL-VAPOR-DEPOSITION OF MERCURY TELLURIDE

      Journal of crystal growth
    42. QI HH; GEE PE; HICKS RF
      SITES FOR ARSINE ADSORPTION ON GAAS(001)

      Surface science
    43. KAPPERS MJ; MCDANIEL AH; HICKS RF
      CONTROLLING THE GROUP-II COMPOSITION IN CDZNTE ALLOYS GROWN BY ORGANOMETALLIC VAPOR-PHASE EPITAXY - A KINETIC-MODEL

      Journal of crystal growth
    44. ADAMSON SD; HAN BK; HICKS RF
      SITE-SPECIFIC REACTION-KINETICS FOR GALLIUM-ARSENIDE METALORGANIC VAPOR-PHASE EPITAXY

      Applied physics letters
    45. GEE PE; QI HH; HICKS RF
      SITES FOR TRIMETHYLGALLIUM ADSORPTION ON GAAS(001)

      Surface science
    46. QI HH; GEE PE; NGUYEN T; HICKS RF
      SITES FOR HYDROGEN ADSORPTION ON GAAS(001)

      Surface science
    47. MCDANIEL AH; WILKERSON KJ; HICKS RF
      CHEMISTRY OF CADMIUM TELLURIDE ORGANOMETALLIC VAPOR-PHASE EPITAXY

      Journal of physical chemistry
    48. KORGEL B; HICKS RF
      A DIFFUSION-MODEL FOR SELECTIVE-AREA EPITAXY BY METALORGANIC CHEMICAL-VAPOR-DEPOSITION

      Journal of crystal growth
    49. KIPP L; BRINGANS RD; BIEGELSEN DK; SWARTZ LE; HICKS RF
      ARSINE ABSORPTION ON SI(100) 2X1 - A PHOTOEMISSION AND SCANNING-TUNNELING-MICROSCOPY STUDY

      Physical review. B, Condensed matter
    50. QI HH; GEE PE; HICKS RF
      INFRARED STUDY OF HYDROGEN ADSORBED ON C(2 X 8) AND (2 X 6) GAAS(100)

      Physical review letters
    51. HAN WJ; KOOH AB; HICKS RF
      INFRARED-SPECTROSCOPY OF CARBON-MONOXIDE ADSORBED ON PT L ZEOLITE/

      Catalysis letters
    52. KOOH AB; HAN WJ; HICKS RF
      KINETICS OF HEPTANE REFORMING ON PT L ZEOLITE

      Catalysis letters
    53. HAN WJ; KOOH AB; HICKS RF
      TURNOVER RATES FOR HEPTANE REFORMING OVER PT L ZEOLITES WITH DIFFERENT ALKALI CATIONS/

      Catalysis letters


ASDD Area Sistemi Dipartimentali e Documentali, Università di Bologna, Catalogo delle riviste ed altri periodici
Documento generato il 06/08/20 alle ore 16:12:09