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La ricerca find articoli where authors phrase all words 'Berkovits, VL' sort by level,fasc_key/DESCEND, pagina_ini_num/ASCEND ha restituito 21 riferimenti
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    1. Berkovits, VL; Gordeeva, AB; Kosobukin, VA
      Local-field effects in reflectance anisotropy spectra of the (001) surfaceof gallium arsenide

      PHYSICS OF THE SOLID STATE
    2. Berkovits, VL; Witkowski, N; Borensztein, Y; Paget, D
      Effect of surface reconstruction on the low-temperature oxidation of InAs(100): Optical investigations - art. no. 121314

      PHYSICAL REVIEW B
    3. Berkovits, VL; Chiaradia, P; Paget, D; Gordeeva, AB; Goletti, C
      Origin of the optical anisotropy of GaAs(0 0 1) (vol 441, pg 26, 1996)

      SURFACE SCIENCE
    4. Berkovits, VL; Gordeeva, AB; Kosobukin, VA
      Local-field effects in reflectance anisotropy spectra of oxidized (001) GaAs and AlGaAs surfaces

      SOLID STATE COMMUNICATIONS
    5. Berkovits, VL; Gordeeva, AB; Lantratov, VM; L'vova, TV
      Optical anisotropy of the (100) surfaces in AlxGa1-xAs ternary compounds

      PHYSICS OF THE SOLID STATE
    6. L'vova, TV; Sedova, IV; Ulin, VP; Sorokin, SV; Solov'ev, VA; Sitnikova, AA; Berkovits, VL; Ivanov, SV
      Molecular-beam epitaxy of ZnSe-based heterostructures on Na2S-passivated GaAs substrates

      VACUUM
    7. Berkovits, VL; L'vova, TV; Ulin, VP
      Chemical nitridation of GaAs(100) by hydrazine-sulfide water solutions

      VACUUM
    8. Berkovits, VL; Chiaradia, P; Paget, D; Gordeeva, AB; Goletti, C
      Origin of the optical anisotropy of GaAs (001)

      SURFACE SCIENCE
    9. BERKOVITS VL; ULIN VP; PAGET D; BONNET JE; LVOVA TV; CHIARADIA P; LANTRATOV VM
      CHEMICAL AND PHOTOCHEMICAL PROCESSES IN SULFIDE PASSIVATION OF GAAS(100) - IN-SITU OPTICAL STUDY AND PHOTOEMISSION ANALYSIS

      Journal of vacuum science & technology. A. Vacuum, surfaces, and films
    10. GUSEV AO; PAGET D; ARISTOV VY; SOUKIASSIAN P; BERKOVITS VL; THIERRYMIEG V
      COMBINED REFLECTANCE ANISOTROPY AND PHOTOEMISSION SPECTROSCOPIES OF CS GAAS(001) INTERFACE FORMATION/

      Journal of vacuum science & technology. A. Vacuum, surfaces, and films
    11. BERKOVITS VL; GUSEV AO; LANTRATOV VM; LVOVA TV; PUSHNYI AB; ULIN VP; PAGET D
      PHOTOINDUCED FORMATION OF DIMERS AT A LIQUID (001)GAAS INTERFACE/

      Physical review. B, Condensed matter
    12. PAGET D; BONNET JE; BERKOVITS VL; CHIARADIA P; AVILA J
      SULFIDE-PASSIVATED GAAS(001) .1. CHEMISTRY ANALYSIS BY PHOTOEMISSION AND REFLECTANCE ANISOTROPY SPECTROSCOPIES

      Physical review. B, Condensed matter
    13. PAGET D; GUSEV AO; BERKOVITS VL
      SULFIDE-PASSIVATED GAAS(001) .2. ELECTRONIC-PROPERTIES

      Physical review. B, Condensed matter
    14. CHIARADIA P; PAGET D; BONNET JE; MARTINGAGO J; BERKOVITS VL
      AS AND GA DIMERS IN CORE-LEVEL SPECTROSCOPY OF S-PASSIVATED GAAS(001)

      Journal of applied physics
    15. PAGET D; BERKOVITS VL; GUSEV AO
      REFLECTANCE ANISOTROPY SPECTROSCOPY - A PROBE FOR SURFACE-CHEMISTRY ON NA2S-PASSIVATED AND (NH4)(2)S-PASSIVATED (001) GAAS

      Journal of vacuum science & technology. A. Vacuum, surfaces, and films
    16. BERKOVITS VL; LANTRATOV VM; LVOVA TV; SHAKIASHVILI GA; ULIN VP; PAGET D
      LIQUID-PHASE EPITAXY ON ALXGA1-XAS SURFACES PASSIVATED IN SULFIDE SOLUTIONS

      Semiconductors
    17. BELOUSOV MV; BERKOVITS VL; GUSEV AO; IVCHENKO EL; KOPYEV PS; LEDENTSOV NN; NESVIZHSKII AI
      OPTICAL ANISOTROPY OF GAAS ALAS SUPERLATT ICES GROWN ALONG THE [113] DIRECTION/

      Fizika tverdogo tela
    18. ANKUDINOV AV; BERKOVITS VL; LVOVA TV; TITKOV AN
      STM STUDY OF THE STRUCTURE OF GOLD CHEMIC ALLY DEPOSITED ON GAAS(110)

      Fizika tverdogo tela
    19. BERKOVITS VL; GUSEV AO; KOCHNEV IV; YAVICH BS
      ROOM-TEMPERATURE REFLECTANCE OF THE GAAS GAALAS SINGLE-QUANTUM-WELL/

      Fizika tverdogo tela
    20. BERKOVITS VL; PAGET D
      REFLECTANCE ANISOTROPY SPECTROSCOPY - A NEW METHOD FOR SEMICONDUCTOR SURFACE-CHEMISTRY INVESTIGATION

      Thin solid films
    21. BERKOVITS VL; LANTRATOV VM; LVOVA TV; SHAKIASHVILI GA; ULIN VP
      LIQUID-PHASE EPITAXIAL REGROWTH ON SULFIDE-PASSIVATED GA1-XALXAS

      Applied physics letters


ASDD Area Sistemi Dipartimentali e Documentali, Università di Bologna, Catalogo delle riviste ed altri periodici
Documento generato il 06/06/20 alle ore 14:10:51