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La ricerca find articoli where authors phrase all words 'BRAMBLETT TR' sort by level,fasc_key/DESCEND, pagina_ini_num/ASCEND ha restituito 8 riferimenti
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    1. KIM H; TAYLOR N; BRAMBLETT TR; GREENE JE
      KINETICS OF SI1-XGEX(001) GROWTH ON SI(001)2X1 BY GAS-SOURCE MOLECULAR-BEAM EPITAXY FROM SI2H6 AND GE2H6

      Journal of applied physics
    2. LU Q; SARDELA MR; TAYLOR N; GLASS G; BRAMBLETT TR; SPILA T; ABELSON JR; GREENE JR
      B INCORPORATION AND HOLE TRANSPORT IN FULLY STRAINED HETEROEPITAXIAL SI1-XGEX GROWN ON SI(001) BY GAS-SOURCE MBE FROM SI2H6, GE2H6, AND B2H6

      Journal of crystal growth
    3. LU Q; SARDELA MR; BRAMBLETT TR; GREENE JE
      B-DOPED FULLY STRAINED SI1-XGEX LAYERS GROWN ON SI(001) BY GAS-SOURCEMOLECULAR-BEAM EPITAXY FROM SI2H6, GE2H6, AND B2H6 - CHARGE-TRANSPORTPROPERTIES

      Journal of applied physics
    4. BRAMBLETT TR; LU Q; KARASAWA T; HASAN MA; JO SK; GREENE JE
      B-DOPED SI(001)2X1 GAS-SOURCE MOLECULAR-BEAM EPITAXY FROM SI2H6 AND B2H6

      Vacuum
    5. LU Q; BRAMBLETT TR; HASAN MA; LEE NE; GREENE JE
      B INCORPORATION IN GE(001) GROWN BY GAS-SOURCE MOLECULAR-BEAM EPITAXYFROM GE2H6 AND B2H6

      Journal of applied physics
    6. LU Q; BRAMBLETT TR; LEE NE; HASAN MA; KARASAWA T; GREENE JE
      B-DOPED SI(001) GROWN BY GAS-SOURCE MOLECULAR-BEAM EPITAXY FROM SI2H6AND B2H6-B INCORPORATION AND ELECTRICAL-PROPERTIES

      Journal of applied physics
    7. BRAMBLETT TR; LU Q; LEE NE; TAYLOR N; HASAN MA; GREENE JE
      GE(001) GAS-SOURCE MOLECULAR-BEAM EPITAXY ON GE(001)2X1 AND SI(001)2X1 FROM GE2H6 - GROWTH-KINETICS AND SURFACE ROUGHENING

      Journal of applied physics
    8. BRAMBLETT TR; LU Q; HASAN MA; JO SK; GREENE JE
      SI(001)2X1 GAS-SOURCE MOLECULAR-BEAM EPITAXY FROM SI2H6 - GROWTH-KINETICS AND BORON DOPING

      Journal of applied physics


ASDD Area Sistemi Dipartimentali e Documentali, Università di Bologna, Catalogo delle riviste ed altri periodici
Documento generato il 25/01/21 alle ore 10:44:55