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1. KIM H; TAYLOR N; BRAMBLETT TR; GREENE JE
   KINETICS OF SI1-XGEX(001) GROWTH ON SI(001)2X1 BY GAS-SOURCE MOLECULAR-BEAM EPITAXY FROM SI2H6 AND GE2H6
   Journal of applied physics
   
   H. Kim et al., "KINETICS OF SI1-XGEX(001) GROWTH ON SI(001)2X1 BY GAS-SOURCE MOLECULAR-BEAM EPITAXY FROM SI2H6 AND GE2H6", Journal of applied physics, 84(11), 1998, pp. 6372-6381
2. LU Q; SARDELA MR; TAYLOR N; GLASS G; BRAMBLETT TR; SPILA T; ABELSON JR; GREENE JR
   B INCORPORATION AND HOLE TRANSPORT IN FULLY STRAINED HETEROEPITAXIAL SI1-XGEX GROWN ON SI(001) BY GAS-SOURCE MBE FROM SI2H6, GE2H6, AND B2H6
   Journal of crystal growth
   
   Q. Lu et al., "B INCORPORATION AND HOLE TRANSPORT IN FULLY STRAINED HETEROEPITAXIAL SI1-XGEX GROWN ON SI(001) BY GAS-SOURCE MBE FROM SI2H6, GE2H6, AND B2H6", Journal of crystal growth, 179(1-2), 1997, pp. 97-107
3. LU Q; SARDELA MR; BRAMBLETT TR; GREENE JE
   B-DOPED FULLY STRAINED SI1-XGEX LAYERS GROWN ON SI(001) BY GAS-SOURCEMOLECULAR-BEAM EPITAXY FROM SI2H6, GE2H6, AND B2H6 - CHARGE-TRANSPORTPROPERTIES
   Journal of applied physics
   
   Q. Lu et al., "B-DOPED FULLY STRAINED SI1-XGEX LAYERS GROWN ON SI(001) BY GAS-SOURCEMOLECULAR-BEAM EPITAXY FROM SI2H6, GE2H6, AND B2H6 - CHARGE-TRANSPORTPROPERTIES", Journal of applied physics, 80(8), 1996, pp. 4458-4466
4. BRAMBLETT TR; LU Q; KARASAWA T; HASAN MA; JO SK; GREENE JE
   B-DOPED SI(001)2X1 GAS-SOURCE MOLECULAR-BEAM EPITAXY FROM SI2H6 AND B2H6
   Vacuum
   
   T.R. Bramblett et al., "B-DOPED SI(001)2X1 GAS-SOURCE MOLECULAR-BEAM EPITAXY FROM SI2H6 AND B2H6", Vacuum, 46(8-10), 1995, pp. 913-916
5. LU Q; BRAMBLETT TR; HASAN MA; LEE NE; GREENE JE
   B INCORPORATION IN GE(001) GROWN BY GAS-SOURCE MOLECULAR-BEAM EPITAXYFROM GE2H6 AND B2H6
   Journal of applied physics
   
   Q. Lu et al., "B INCORPORATION IN GE(001) GROWN BY GAS-SOURCE MOLECULAR-BEAM EPITAXYFROM GE2H6 AND B2H6", Journal of applied physics, 78(10), 1995, pp. 6027-6032
6. LU Q; BRAMBLETT TR; LEE NE; HASAN MA; KARASAWA T; GREENE JE
   B-DOPED SI(001) GROWN BY GAS-SOURCE MOLECULAR-BEAM EPITAXY FROM SI2H6AND B2H6-B INCORPORATION AND ELECTRICAL-PROPERTIES
   Journal of applied physics
   
   Q. Lu et al., "B-DOPED SI(001) GROWN BY GAS-SOURCE MOLECULAR-BEAM EPITAXY FROM SI2H6AND B2H6-B INCORPORATION AND ELECTRICAL-PROPERTIES", Journal of applied physics, 77(7), 1995, pp. 3067-3076
7. BRAMBLETT TR; LU Q; LEE NE; TAYLOR N; HASAN MA; GREENE JE
   GE(001) GAS-SOURCE MOLECULAR-BEAM EPITAXY ON GE(001)2X1 AND SI(001)2X1 FROM GE2H6 - GROWTH-KINETICS AND SURFACE ROUGHENING
   Journal of applied physics
   
   T.R. Bramblett et al., "GE(001) GAS-SOURCE MOLECULAR-BEAM EPITAXY ON GE(001)2X1 AND SI(001)2X1 FROM GE2H6 - GROWTH-KINETICS AND SURFACE ROUGHENING", Journal of applied physics, 77(4), 1995, pp. 1504-1513
8. BRAMBLETT TR; LU Q; HASAN MA; JO SK; GREENE JE
   SI(001)2X1 GAS-SOURCE MOLECULAR-BEAM EPITAXY FROM SI2H6 - GROWTH-KINETICS AND BORON DOPING
   Journal of applied physics
   
   T.R. Bramblett et al., "SI(001)2X1 GAS-SOURCE MOLECULAR-BEAM EPITAXY FROM SI2H6 - GROWTH-KINETICS AND BORON DOPING", Journal of applied physics, 76(3), 1994, pp. 1884-1888