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La ricerca find articoli where authors phrase all words ' van Suchtelen, J' sort by level,fasc_key/DESCEND, pagina_ini_num/ASCEND ha restituito 15 riferimenti
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    1. Nijdam, AJ; Gardeniers, JGE; Berenschot, JW; van Veenendaal, E; van Suchtelen, J; Elwenspoek, M
      Influence of the angle between etched (near) Si{111} surfaces and the substrate orientation on the underetch rate during anisotropic wet-chemical etching of silicon

      JOURNAL OF MICROMECHANICS AND MICROENGINEERING
    2. van Veenendaal, E; Cuppen, HM; van Enckevort, WJP; van Suchtelen, J; Nijdam, AJ; Elwenspoek, M; Vlieg, E
      A Monte Carlo study of etching in the presence of a mask junction

      JOURNAL OF MICROMECHANICS AND MICROENGINEERING
    3. van Veenendaal, E; Sato, K; Shikida, M; van Suchtelen, J
      Micromorphology of single crystalline silicon surfaces during anisotropic wet chemical etching in KOH and TMAH

      SENSORS AND ACTUATORS A-PHYSICAL
    4. van Veenendaal, E; Sato, K; Shikida, M; Nijdam, AJ; van Suchtelen, J
      Micro-morphology of single crystalline silicon surfaces during anisotropicwet chemical etching in KOH: velocity source forests

      SENSORS AND ACTUATORS A-PHYSICAL
    5. Hollander, FFA; Stasse, O; van Suchtelen, J; van Enckevort, WJP
      Recrystallization phenomena of solution grown paraffin dendrites

      JOURNAL OF CRYSTAL GROWTH
    6. Nijdam, AJ; van Veenendaal, E; Cuppen, HM; van Suchtelen, J; Reed, ML; Gardeniers, JGE; van Enckevort, WJP; Vlieg, E; Elwenspoek, M
      Formation and stabilization of pyramidal etch hillocks on silicon {100} inanisotropic etchants: Experiments and Monte Carlo simulation

      JOURNAL OF APPLIED PHYSICS
    7. van Veenendaal, E; Nijdam, AJ; van Suchtelen, J; Sato, K; Gardeniers, JGE; van Enckevort, WJP; Elwenspoek, M
      Simulation of anisotropic wet chemical etching using a physical model

      SENSORS AND ACTUATORS A-PHYSICAL
    8. Cuppen, HM; van Veenendaal, E; van Suchtelen, J; van Enckevort, WJP; Vlieg, E
      A Monte Carlo study of dislocation growth and etching of crystals

      JOURNAL OF CRYSTAL GROWTH
    9. van Veenendaal, E; van Beurden, P; van Enckevort, WJP; Vlieg, E; van Suchtelen, J; Elwenspoek, M
      Monte Carlo study of kinetic smoothing during dissolution and etching of the Kossel (100) and silicon (111) surfaces

      JOURNAL OF APPLIED PHYSICS
    10. van Suchtelen, J; van Veenendaal, E
      The construction of orientation-dependent crystal growth and etch rate functions I. Mathematical and physical aspects

      JOURNAL OF APPLIED PHYSICS
    11. van Veenendaal, E; van Suchtelen, J; van Enckevort, WJP; Sato, K; Nijdam, AJ; Gardeniers, JGE; Elwenspoek, M
      The construction of orientation-dependent crystal growth and etch rate functions II: Application to wet chemical etching of silicon in potassium hydroxide

      JOURNAL OF APPLIED PHYSICS
    12. Nijdam, AJ; Berenschot, JW; van Suchtelen, J; Gardeniers, JGE; Elwenspoek, M
      Velocity sources as an explanation for experimentally observed variations in Si{111} etch rates

      JOURNAL OF MICROMECHANICS AND MICROENGINEERING
    13. van Suchtelen, J; Nijdam, AJ; van Veenendaal, E
      The velocity source concept

      JOURNAL OF CRYSTAL GROWTH
    14. van Veenendaal, E; van Hoof, PJCM; van Suchtelen, J; van Enckevort, WJP; Bennema, P
      Kinetic roughening of the Kossel (1 0 0) surface

      JOURNAL OF CRYSTAL GROWTH
    15. Nijdam, AJ; van Suchtelen, J; Berenschot, JW; Gardeniers, JGE; Elwenspoek, M
      Etching of silicon in alkaline solutions: a critical look at the {1 1 1} minimum

      JOURNAL OF CRYSTAL GROWTH


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Documento generato il 30/05/20 alle ore 08:09:35