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La ricerca find articoli where authors phrase all words ' Wong-Leung, J' sort by level,fasc_key/DESCEND, pagina_ini_num/ASCEND ha restituito 20 riferimenti
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    1. Bradby, JE; Williams, JS; Wong-Leung, J; Swain, MV; Munroe, P
      Mechanical deformation in silicon by micro-indentation

      JOURNAL OF MATERIALS RESEARCH
    2. Liu, ACY; McCallum, JC; Wong-Leung, J
      Defect formation due to the crystallization of deep amorphous volumes formed in silicon by mega electron volt (MeV) ion implantation

      JOURNAL OF MATERIALS RESEARCH
    3. Williams, JS; Ridgway, MC; Conway, MJ; Wong-Leung, J; Zhu, XF; Petravic, M; Fortuna, F; Ruault, MO; Bernas, H; Kinomura, A; Nakano, Y; Hayashi, Y
      Interaction of defects and metals with nanocavities in silicon

      NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS
    4. Stritzker, B; Petravic, M; Wong-Leung, J; Williams, JS
      Efficiency of dislocations and cavities for gettering of Cu and Fe in silicon

      NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS
    5. Liu, ACY; McCallum, JC; Wong-Leung, J
      The crystallisation of deep amorphous wells in silicon produced by ion implantation

      NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS
    6. Wong-Leung, J; Jagadish, C; Conway, MJ; Fitz Gerald, JD
      Effect of implant temperature on secondary defects created by MeV Sn implantation in silicon

      JOURNAL OF APPLIED PHYSICS
    7. Macdonald, D; Cuevas, A; Wong-Leung, J
      Capture cross sections of the acceptor level of iron-boron pairs in p-typesilicon by injection-level dependent lifetime measurements

      JOURNAL OF APPLIED PHYSICS
    8. Linnarsson, MK; Janson, MS; Zimmermann, U; Svensson, BG; Persson, POA; Hultman, L; Wong-Leung, J; Karlsson, S; Schoner, A; Bleichner, H; Olsson, E
      Solubility limit and precipitate formation in Al-doped 4H-SiC epitaxial material

      APPLIED PHYSICS LETTERS
    9. Pellegrino, P; Leveque, P; Wong-Leung, J; Jagadish, C; Svensson, BG
      Separation of vacancy and interstitial depth profiles in ion-implanted silicon: Experimental observation

      APPLIED PHYSICS LETTERS
    10. Bradby, JE; Williams, JS; Wong-Leung, J; Swain, MV; Munroe, P
      Mechanical deformation of InP and GaAs by spherical indentation

      APPLIED PHYSICS LETTERS
    11. Williams, JS; Conway, MJ; Williams, BC; Wong-Leung, J
      Direct observation of voids in the vacancy excess region of ion bombarded silicon

      APPLIED PHYSICS LETTERS
    12. Stritzker, B; Petravic, M; Wong-Leung, J; Williams, JS
      Selectivity of nanocavities and dislocations for gettering of Cu and Fe insilicon

      APPLIED PHYSICS LETTERS
    13. Wong-Leung, J; Fatima, S; Jagadish, C; FitzGerald, JD
      Effect of implant temperature on extended defects created by ion implantation in silicon

      DEFECTS AND DIFFUSION IN SEMICONDUCTORS
    14. Wong-Leung, J; Fatima, S; Jagadish, C; Fitz Gerald, JD; Chou, CT; Zou, J; Cockayne, DJH
      Transmission electron microscopy characterization of secondary defects created by MeV Si, Ge, and Sn implantation in silicon

      JOURNAL OF APPLIED PHYSICS
    15. Bradby, JE; Williams, JS; Wong-Leung, J; Swain, MV; Munroe, P
      Transmission electron microscopy observation of deformation microstructureunder spherical indentation in silicon

      APPLIED PHYSICS LETTERS
    16. Williams, JS; Chen, Y; Wong-Leung, J; Kerr, A; Swain, MV
      Ultra-micro-indentation of silicon and compound semiconductors with spherical indenters

      JOURNAL OF MATERIALS RESEARCH
    17. Li, ZL; Wong-Leung, J; Deenapanray, PNK; Conway, M; Chivers, DJ; FitzGerald, JD; Williams, JS
      The role of Fe on the crystallisation of alpha-Si3N4 from amorphous Si-N formed by ion implantation

      NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS
    18. Wong-Leung, J; Williams, JS; Kinomura, A; Nakano, Y; Hayashi, Y; Eaglesham, DJ
      Diffusion and transient trapping of metals in silicon

      PHYSICAL REVIEW B-CONDENSED MATTER
    19. Williams, JS; Conway, MJ; Wong-Leung, J; Deenapanray, PNK; Petravic, M; Brown, RA; Eaglesham, DJ; Jacobson, DC
      The role of oxygen on the stability of gettering of metals to cavities in silicon

      APPLIED PHYSICS LETTERS
    20. Fatima, S; Wong-Leung, J; Gerald, JF; Jagadish, C
      Effect of ion mass on the evolution of extended defects during annealing of MeV ion-implanted p-type Si

      APPLIED PHYSICS LETTERS


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Documento generato il 16/01/21 alle ore 04:37:40