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1. Bradby, JE; Williams, JS; Wong-Leung, J; Swain, MV; Munroe, P
   Mechanical deformation in silicon by micro-indentation
   JOURNAL OF MATERIALS RESEARCH
   
   J.E. Bradby et al., "Mechanical deformation in silicon by micro-indentation", J MATER RES, 16(5), 2001, pp. 1500-1507
2. Liu, ACY; McCallum, JC; Wong-Leung, J
   Defect formation due to the crystallization of deep amorphous volumes formed in silicon by mega electron volt (MeV) ion implantation
   JOURNAL OF MATERIALS RESEARCH
   
   A.C.Y. Liu et al., "Defect formation due to the crystallization of deep amorphous volumes formed in silicon by mega electron volt (MeV) ion implantation", J MATER RES, 16(11), 2001, pp. 3229-3237
3. Williams, JS; Ridgway, MC; Conway, MJ; Wong-Leung, J; Zhu, XF; Petravic, M; Fortuna, F; Ruault, MO; Bernas, H; Kinomura, A; Nakano, Y; Hayashi, Y
   Interaction of defects and metals with nanocavities in silicon
   NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS
   
   J.S. Williams et al., "Interaction of defects and metals with nanocavities in silicon", NUCL INST B, 178, 2001, pp. 33-43
4. Stritzker, B; Petravic, M; Wong-Leung, J; Williams, JS
   Efficiency of dislocations and cavities for gettering of Cu and Fe in silicon
   NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS
   
   B. Stritzker et al., "Efficiency of dislocations and cavities for gettering of Cu and Fe in silicon", NUCL INST B, 175, 2001, pp. 154-158
5. Liu, ACY; McCallum, JC; Wong-Leung, J
   The crystallisation of deep amorphous wells in silicon produced by ion implantation
   NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS
   
   A.C.Y. Liu et al., "The crystallisation of deep amorphous wells in silicon produced by ion implantation", NUCL INST B, 175, 2001, pp. 164-168
6. Wong-Leung, J; Jagadish, C; Conway, MJ; Fitz Gerald, JD
   Effect of implant temperature on secondary defects created by MeV Sn implantation in silicon
   JOURNAL OF APPLIED PHYSICS
   
   J. Wong-Leung et al., "Effect of implant temperature on secondary defects created by MeV Sn implantation in silicon", J APPL PHYS, 89(5), 2001, pp. 2556-2559
7. Macdonald, D; Cuevas, A; Wong-Leung, J
   Capture cross sections of the acceptor level of iron-boron pairs in p-typesilicon by injection-level dependent lifetime measurements
   JOURNAL OF APPLIED PHYSICS
   
   D. Macdonald et al., "Capture cross sections of the acceptor level of iron-boron pairs in p-typesilicon by injection-level dependent lifetime measurements", J APPL PHYS, 89(12), 2001, pp. 7932-7939
8. Linnarsson, MK; Janson, MS; Zimmermann, U; Svensson, BG; Persson, POA; Hultman, L; Wong-Leung, J; Karlsson, S; Schoner, A; Bleichner, H; Olsson, E
   Solubility limit and precipitate formation in Al-doped 4H-SiC epitaxial material
   APPLIED PHYSICS LETTERS
   
   M.K. Linnarsson et al., "Solubility limit and precipitate formation in Al-doped 4H-SiC epitaxial material", APPL PHYS L, 79(13), 2001, pp. 2016-2018
9. Pellegrino, P; Leveque, P; Wong-Leung, J; Jagadish, C; Svensson, BG
   Separation of vacancy and interstitial depth profiles in ion-implanted silicon: Experimental observation
   APPLIED PHYSICS LETTERS
   
   P. Pellegrino et al., "Separation of vacancy and interstitial depth profiles in ion-implanted silicon: Experimental observation", APPL PHYS L, 78(22), 2001, pp. 3442-3444
10. Bradby, JE; Williams, JS; Wong-Leung, J; Swain, MV; Munroe, P
    Mechanical deformation of InP and GaAs by spherical indentation
    APPLIED PHYSICS LETTERS
    
    J.E. Bradby et al., "Mechanical deformation of InP and GaAs by spherical indentation", APPL PHYS L, 78(21), 2001, pp. 3235-3237
11. Williams, JS; Conway, MJ; Williams, BC; Wong-Leung, J
    Direct observation of voids in the vacancy excess region of ion bombarded silicon
    APPLIED PHYSICS LETTERS
    
    J.S. Williams et al., "Direct observation of voids in the vacancy excess region of ion bombarded silicon", APPL PHYS L, 78(19), 2001, pp. 2867-2869
12. Stritzker, B; Petravic, M; Wong-Leung, J; Williams, JS
    Selectivity of nanocavities and dislocations for gettering of Cu and Fe insilicon
    APPLIED PHYSICS LETTERS
    
    B. Stritzker et al., "Selectivity of nanocavities and dislocations for gettering of Cu and Fe insilicon", APPL PHYS L, 78(18), 2001, pp. 2682-2684
13. Wong-Leung, J; Fatima, S; Jagadish, C; FitzGerald, JD
    Effect of implant temperature on extended defects created by ion implantation in silicon
    DEFECTS AND DIFFUSION IN SEMICONDUCTORS
    
    J. Wong-Leung et al., "Effect of implant temperature on extended defects created by ion implantation in silicon", DEFECT DIFF, 183-1, 2000, pp. 163-169
14. Wong-Leung, J; Fatima, S; Jagadish, C; Fitz Gerald, JD; Chou, CT; Zou, J; Cockayne, DJH
    Transmission electron microscopy characterization of secondary defects created by MeV Si, Ge, and Sn implantation in silicon
    JOURNAL OF APPLIED PHYSICS
    
    J. Wong-Leung et al., "Transmission electron microscopy characterization of secondary defects created by MeV Si, Ge, and Sn implantation in silicon", J APPL PHYS, 88(3), 2000, pp. 1312-1318
15. Bradby, JE; Williams, JS; Wong-Leung, J; Swain, MV; Munroe, P
    Transmission electron microscopy observation of deformation microstructureunder spherical indentation in silicon
    APPLIED PHYSICS LETTERS
    
    J.E. Bradby et al., "Transmission electron microscopy observation of deformation microstructureunder spherical indentation in silicon", APPL PHYS L, 77(23), 2000, pp. 3749-3751
16. Williams, JS; Chen, Y; Wong-Leung, J; Kerr, A; Swain, MV
    Ultra-micro-indentation of silicon and compound semiconductors with spherical indenters
    JOURNAL OF MATERIALS RESEARCH
    
    J.S. Williams et al., "Ultra-micro-indentation of silicon and compound semiconductors with spherical indenters", J MATER RES, 14(6), 1999, pp. 2338-2343
17. Li, ZL; Wong-Leung, J; Deenapanray, PNK; Conway, M; Chivers, DJ; FitzGerald, JD; Williams, JS
    The role of Fe on the crystallisation of alpha-Si3N4 from amorphous Si-N formed by ion implantation
    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS
    
    Z.L. Li et al., "The role of Fe on the crystallisation of alpha-Si3N4 from amorphous Si-N formed by ion implantation", NUCL INST B, 148(1-4), 1999, pp. 534-539
18. Wong-Leung, J; Williams, JS; Kinomura, A; Nakano, Y; Hayashi, Y; Eaglesham, DJ
    Diffusion and transient trapping of metals in silicon
    PHYSICAL REVIEW B-CONDENSED MATTER
    
    J. Wong-Leung et al., "Diffusion and transient trapping of metals in silicon", PHYS REV B, 59(12), 1999, pp. 7990-7998
19. Williams, JS; Conway, MJ; Wong-Leung, J; Deenapanray, PNK; Petravic, M; Brown, RA; Eaglesham, DJ; Jacobson, DC
    The role of oxygen on the stability of gettering of metals to cavities in silicon
    APPLIED PHYSICS LETTERS
    
    J.S. Williams et al., "The role of oxygen on the stability of gettering of metals to cavities in silicon", APPL PHYS L, 75(16), 1999, pp. 2424-2426
20. Fatima, S; Wong-Leung, J; Gerald, JF; Jagadish, C
    Effect of ion mass on the evolution of extended defects during annealing of MeV ion-implanted p-type Si
    APPLIED PHYSICS LETTERS
    
    S. Fatima et al., "Effect of ion mass on the evolution of extended defects during annealing of MeV ion-implanted p-type Si", APPL PHYS L, 74(8), 1999, pp. 1141-1143