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Low-crosstalk penalty MZI space switch with a 0.64-mm phase shifter using quantum-well electrorefraction
IEEE PHOTONICS TECHNOLOGY LETTERS
Charge screening in the quantum Hall regime probed by the lateral photoelectric effect
PHYSICA B
Optically detected microwave resonance at 95 GHz of exciton states in InAs/GaAs quantum dots
PHYSICA STATUS SOLIDI B-BASIC RESEARCH
STM observations of GaAs(110) showing the top and bottom zig-zag rows of the surface - art. no. 075314
PHYSICAL REVIEW B
Frohlich interaction in InAs/GaAs self-assembled quantum dots - art. no. 075303
PHYSICAL REVIEW B
Low-temperature scanning-tunneling microscope for luminescence measurements in high magnetic fields
REVIEW OF SCIENTIFIC INSTRUMENTS
Optical detection of ballistic electrons injected by a scanning-tunneling microscope
PHYSICAL REVIEW LETTERS
Random electric fields and impurity diffusion in delta layers
PHYSICAL REVIEW B
Enhanced phonon-assisted photoluminescence in InAs/GaAs parallelepiped quantum dots
PHYSICAL REVIEW B
Chopped InGaAs/InP quantum wells for a polarization-independent space switch at 1.53 mu m
SUPERLATTICES AND MICROSTRUCTURES
Relaxation of photo-excitations in films of oligo- and poly(para-phenylenevinylene) derivatives
CHEMICAL PHYSICS
Carrier capture in ultrathin InAs/GaAs quantum wells
PHYSICAL REVIEW B
Electrorefraction in strained InGaAs/InP chopped quantum wells: Significance of the interface layers
JOURNAL OF APPLIED PHYSICS
A chopped quantum-well polarization-independent interferometric switch at 1.53 mu m
IEEE JOURNAL OF QUANTUM ELECTRONICS
Use of the Schiller decapitation process for the manufacture of high quality tungsten scanning tunneling microscopy tips
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B
Electronic structure and phonon-assisted luminescence in self-assembled quantum dots
PHYSICA STATUS SOLIDI B-BASIC RESEARCH
Coupling of ultrathin InAs layers as a tool for band-offset determination
PHYSICAL REVIEW B-CONDENSED MATTER
Morphology of homo-epitaxial vicinal (1 0 0) III-V surfaces
JOURNAL OF CRYSTAL GROWTH
Spectrally resolved luminescence from an InGaAs quantum well induced by anambient scanning tunneling microscope
APPLIED PHYSICS LETTERS
Interfacet surface diffusion in selective area epitaxy of III-V semiconductors
APPLIED PHYSICS LETTERS
Diamagnetic effects in structures containing a single, a few or an infinite number of coupled delta layers
PHYSICA B
Magneto-photoconductivity of a 2DEG under intense terahertz radiation
PHYSICA B
Exchange interaction in degenerate p-type quantum wells
PHYSICA B
DX-CENTER AND PRESSURE EFFECTS ON THE ELECTRONIC-STRUCTURE OF A DELTA-DOPED QUANTUM BARRIER
Superlattices and microstructures
BUTT-COUPLING LOSS OF 0.1DB INTERFACE IN INP/INGAAS MULTIPLE-QUANTUM-WELL WAVE-GUIDE-WAVE-GUIDE STRUCTURES GROWN BY SELECTIVE-AREA CHEMICALBEAM EPITAXY/
Semiconductor science and technology
EXPERIMENTAL SIGNATURE OF PHASE-COHERENT ANDREEV REFLECTION
Physical review. B, Condensed matter
MANY-PARTICLE EFFECTS IN BE-DELTA-DOPED GAAS ALXGA1-XAS QUANTUM-WELLS/
Physical review. B, Condensed matter
EXCHANGE INTERACTION IN P-TYPE GAAS ALXGA1-XAS HETEROSTRUCTURES STUDIED BY MAGNETOTRANSPORT/
Physical review. B, Condensed matter
A MODIFIED BCF MODEL TO QUANTITATIVELY DESCRIBE THE (100)INP GROWTH-RATE IN CHEMICAL BEAM EPITAXY
Journal of crystal growth
BUTT-COUPLING LOSS OF 0.1 DB INTERFACE IN INP/INGAAS MQW WAVE-GUIDE-WAVE-GUIDE STRUCTURES GROWN BY SELECTIVE-AREA CHEMICAL BEAM EPITAXY/
Journal of crystal growth
X-RAY INTERFERENCE EFFECT AS A TOOL FOR THE STRUCTURAL INVESTIGATION OF GAINAS INP MULTIPLE-QUANTUM WELLS/
Journal of applied physics
ANALYSIS OF 6-NM ALGAAS SQW LOW-CONFINEMENT LASER STRUCTURES FOR VERYHIGH-POWER OPERATION
IEEE journal of selected topics in quantum electronics
COUPLED ULTRATHIN INAS LAYERS IN GAAS AS A TOOL FOR THE DETERMINATIONOF BAND OFFSETS
Superlattices and microstructures
SPIN-DEPENDENT HOLED DELOCALIZATION ENHANCEMENT BY BANDFILLING EFFECTS IN DEGENERATE ASYMMETRIC DOUBLE-QUANTUM WELLS
Superlattices and microstructures
SPATIAL CORRELATION-EFFECTS OF CHARGED IMPURITIES ON ELECTRON-MOBILITY IN DELTA-DOPED QUANTUM BARRIERS
Superlattices and microstructures
HETEROGENEOUS HYDRIDE PYROLYSIS IN A CHEMICAL BEAM EPITAXY CRACKER CELL AND GROWTH OF HIGH-QUALITY INP
Journal of vacuum science & technology. A. Vacuum, surfaces, and films
INTERFACE MANIPULATION IN GAXIN1-XAS INP MULTIPLE-LAYER STRUCTURES GROWN BY CHEMICAL BEAM EPITAXY/
Semiconductor science and technology
A TUNABLE HOT-ELECTRON LIGHT EMITTER
Semiconductor science and technology
MAGNETOOPTICAL STUDY ON EXCITON SCREENING IN P-TYPE ALXGA1-XAS INYGA1-YAS QUANTUM-WELLS/
Physical review. B, Condensed matter
EXCHANGE-CORRELATION ENERGY OF A HOLE GAS INCLUDING VALENCE-BAND COUPLING
Physical review. B, Condensed matter
1 F NOISE IN DELTA-DOPED GAAS ANALYZED IN TERMS OF MOBILITY FLUCTUATIONS/
Physical review. B, Condensed matter
ELECTRON-MOBILITY IN SI DELTA-DOPED GAAS WITH SPATIAL CORRELATIONS INTHE DISTRIBUTION OF CHARGED IMPURITIES
Physical review. B, Condensed matter
EXCITON BLEACHING IN P-TYPE SINGLE AND DOUBLE-QUANTUM WELLS - THE EFFECTS OF SUBBAND OCCUPATION AND WAVE-FUNCTION OVERLAP
Physica status solidi. a, Applied research
CATION SUBLATTICE ORDERING IN GAXIN1-XAS QUANTUM-WELLS - EVIDENCE FROM ELECTRON-PHONON INTERACTION
Physica status solidi. a, Applied research
EPITAXIAL LAYER MORPHOLOGY OF HIGHLY STRAINED GAINAS INP MULTIPLE-QUANTUM-WELL STRUCTURES GROWN BY CBE/
Microelectronics
EFFECTS OF TENSILE STRAIN AND SUBSTRATE OFF-ORIENTATION ON THE GROWTHOF GAINAS INP MULTIPLE-QUANTUM-WELL STRUCTURES BY CBE/
Journal of crystal growth
SURFACE-MORPHOLOGY OF INP INGAAS IN SELECTIVE-AREA GROWTH BY CHEMICALBEAM EPITAXY/
Journal of crystal growth
NEW OPTOELECTRONIC TIP DESIGN FOR ULTRAFAST SCANNING-TUNNELING-MICROSCOPY
Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena
EXPERIMENTAL-ANALYSIS OF THE EFFICIENCY OF HETEROSTRUCTURE GAAS-ALGAAS SOLAR-CELLS
Solar energy materials and solar cells
IMAGING OF EDGE CHANNELS IN THE INTEGER QUANTUM HALL REGIME BY THE LATERAL PHOTOELECTRIC EFFECT
Physica. B, Condensed matter
DETECTION OF PICOSECOND ELECTRICAL TRANSIENTS IN A SCANNING TUNNELINGMICROSCOPE
Physica. B, Condensed matter
REFLECTION OF FINITE-WIDTH EDGE CHANNELS
Physical review. B, Condensed matter
EFFECT OF STRAIN ON A 2ND-ORDER VAN-HOVE SINGULARITY IN ALXGA1-XAS INYGA1-YAS QUANTUM-WELLS/
Physical review. B, Condensed matter
ELECTRONIC-STRUCTURE OF A SI DELTA-DOPED LAYER IN A GAAS ALXGA1-XAS/GAAS QUANTUM BARRIER/
Physical review. B, Condensed matter
ELECTRON-PHONON COUPLING IN A DELTA-DOPED N-I-P STRUCTURE IN GAAS
Physical review. B, Condensed matter
ENHANCEMENT OF SPIN-DEPENDENT HOLE DELOCALIZATION IN DEGENERATE ASYMMETRIC DOUBLE-QUANTUM WELLS
Physical review. B, Condensed matter
IMAGING OF EDGE CHANNELS IN THE INTEGER QUANTUM HALL REGIME BY THE LATERAL PHOTOELECTRIC EFFECT
Surface science
X(Z)-X(XY) CROSSOVER IN A 2-DIMENSIONAL ELECTRON-GAS IN ALAS
Surface science
SUBSTITUTION OF INP LAYERS TO INAS FOR STRAIN COMPENSATION IN GAXIN1-XAS INP SUPERLATTICES/
Journal of crystal growth
STRAINED GAINAS INP MQW LAYERS GROWN BY CBE FOR OPTICAL-COMPONENTS/
Journal of crystal growth
ULTRAFAST CARRIER DYNAMICS AT A METAL-SEMICONDUCTOR INTERFACE
Journal of applied physics
INTERSUBBAND-COUPLING AND SCREENING EFFECTS ON THE ELECTRON-TRANSPORTIN A QUASI-2-DIMENSIONAL S-DOPED SEMICONDUCTOR SYSTEM
Journal of applied physics
ATTENUATION OF PICOSECOND ELECTRICAL PULSES BY 2-DIMENSIONAL ELECTRONGASES INTEGRATED IN COPLANAR STRIPLINES
Journal of applied physics
BE DELTA-DOPED LAYERS IN GAAS STUDIED BY SCANNING-TUNNELING-MICROSCOPY
Materials science & engineering. B, Solid-state materials for advanced technology
DIAMAGNETIC SDH EFFECT IN CROSSED AND PARALLEL CURRENT MAGNETIC-FIELDDIRECTIONS IN SI-DELTA-DOPED GAAS
Physica. B, Condensed matter
ELECTRON-MOBILITY IN SI DELTA-DOPED GAAS
Physica. B, Condensed matter
CAPTURE OF CARRIERS INTO A GAAS ALGAAS QUANTUM-WELL RELEVANCE TO LASER PERFORMANCE/
Physica status solidi. b, Basic research
INVESTIGATIONS ON INDIUM-PHOSPHIDE GROWN BY CHEMICAL BEAM EPITAXY
Journal of electronic materials
INFLUENCE OF CH4 H-2 REACTIVE ION ETCHING ON ELECTRICAL AND OPTICAL-PROPERTIES OF ALGAAS/GAAS AND PSEUDOMORPHIC ALGAAS/INGAAS/GAAS HETEROSTRUCTURES/
Materials science and technology
A RHEED STUDY OF THE DYNAMICS OF GAAS AND ALGAAS GROWTH ON A (001) SURFACE BY MBE
Applied surface science
IMAGING OF EDGE CHANNELS IN THE INTEGER QUANTUM HALL REGIME BY THE LATERAL PHOTOELECTRIC EFFECT
Physical review. B, Condensed matter
DIRECT OBSERVATION OF EDGE CHANNELS IN THE INTEGER QUANTUM HALL REGIME
Physical review letters
TIME-RESOLVED OPTICAL BEAM-INDUCED CURRENTS - A NOVEL TECHNIQUE TO IMAGE SPATIOTEMPORAL PHENOMENA IN SEMICONDUCTORS
Physica status solidi. a, Applied research
GROWTH OF GAXIN1-XAS INP THIN-LAYER STRUCTURES BY CHEMICAL BEAM EPITAXY/
Journal of crystal growth
TUNABLE WAVELENGTH HOT-ELECTRON LIGHT EMITTER
Applied physics letters
2X2 MACH-ZEHNDER INTERFEROMETRIC SWITCH BASED ON HETERO-N-I-P-I QUANTUM-WELLS
Applied physics letters
GENERATION OF ULTRASHORT ELECTRICAL PULSES WITH VARIABLE PULSE WIDTHS
Applied physics letters
DETECTION OF A COMBINATION OF DEFECT ACTIVATED PHONON MODES IN ALAS GAAS SUPERLATTICE STRUCTURE BY FOURIER-TRANSFORM SPECTROSCOPY
Infrared physics & technology
ELECTRON-TRANSPORT IN MESOSCOPIC GAAS ALGAAS-STRUCTURES WITH SUPERCONDUCTING CONTACTS/
Physica. B, Condensed matter
EXPERIMENTAL AND THEORETICAL-STUDY OF THE CARRIER CAPTURE TIME
Optical and quantum electronics
ULTRAFAST CARRIER DYNAMICS AT A METAL-SEMICONDUCTOR INTERFACE STUDIEDBY FEMTOSECOND LUMINESCENCE SPECTROSCOPY
Semiconductor science and technology
TIME-RESOLVED OBIC FOR PROBING CURRENT FILAMENTATION IN GAAS ALXGA1-XAS HETEROSTRUCTURES/
Microelectronic engineering
POLARIZATION OF TUNNELING-ASSISTED RECOMBINATION OF 2-DIMENSIONAL HOLES
Physical review. B, Condensed matter
TOTAL SUPPRESSION OF THE INTER-EDGE-CHANNEL SCATTERING IN A GAAS ALGAAS HETEROSTRUCTURE/
Surface science
INFLUENCE OF GATE VOLTAGE ON THE TRANSPORT-PROPERTIES OF SUPERCONDUCTOR 2DEG SYSTEMS
Surface science
VERTICAL-CAVITY SURFACE-EMITTING LASERS WITH PERIODIC GAIN AND ALUMINUM TOP CONTACTS
Electronics Letters
APPLICATION OF DELTA-DOPING IN GAAS TUNNEL-JUNCTIONS
Electronics Letters
PHOTOELECTROCHEMISTRY OF SILICON-DELTA-DOPED GAAS STRUCTURES
Electrochimica acta
SELECTIVE EXCITON FORMATION IN THIN GAAS-ALGAAS QUANTUM-WELLS
Journal de physique. IV
EDGE-CHANNEL TRANSPORT IN THE PRESENCE OF A LATERAL CONCENTRATION GRADIENT IN THE 2-DIMENSIONAL ELECTRON-GAS
Physical review. B, Condensed matter
SEPARATION OF EDGE CHANNELS BY A MACROSCOPIC DISTANCE IN A HALF-GATEDGAAS ALXGA1-XAS HETEROSTRUCTURE/
Physical review. B, Condensed matter
SELECTIVE EXCITON FORMATION IN THIN GAAS ALXGA1-XAS QUANTUM-WELLS/
Physical review letters
TRANSPORT AND OPTICAL-PROPERTIES OF ALGAAS GAAS AND PSEUDOMORPHIC ALGAAS/INGAAS/GAAS HETEROSTRUCTURES SUBJECTED TO CH4/H2 REACTIVE ION ETCHING/
Journal of applied physics
OPTICAL INVESTIGATION OF THE 2-DIMENSIONAL HOLE ENERGY-SPECTRUM IN GAAS ALXGA1-XAS HETEROJUNCTIONS
Journal of applied physics
LOW-VOLTAGE HETERO-NIPI WAVELENGTH MODULATORS
I.E.E.E. transactions on electron devices
ALUMINUM LAYERS AS NONALLOYED CONTACTS TO P-TYPE GAAS
Applied physics letters
SINGLE-WAVELENGTH ALL-OPTICAL PHASE MODULATION IN A GAAS ALAS HETERO-NIPI WAVE-GUIDE - TOWARDS AN OPTICAL TRANSISTOR/
Applied physics letters
ANDREEV REFLECTION AT SUPERCONDUCTING CONTACTS TO GAAS ALGAAS HETEROSTRUCTURES/
Applied physics letters
LOW-VOLTAGE HETERO-NIPI WAVE-GUIDE MODULATORS WITH GAAS ALAS QUANTUM-WELLS/
Applied physics letters
BLOCKING OF GAMMA-]X TRANSFER IN GAAS ALAS SHORT-PERIOD SUPERLATTICESDUE TO X-STATE BAND FILLING/
Applied physics letters