Catalogo Articoli (Spogli Riviste)

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La ricerca find articoli where authors phrase all words ' Whang, KW' sort by level,fasc_key/DESCEND, pagina_ini_num/ASCEND ha restituito 45 riferimenti
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    1. Song, BM; Kim, JK; Hwang, MS; Yang, JH; Whang, KW
      Application of dichroic mirror for improvement of luminance and luminous efficacy in an alternating current plasma display cell

      JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B
    2. Kim, JK; Moon, KS; Whang, KW; Lee, JH
      Effects of post-treatment of MgO on the discharge characteristics of an alternating current plasma display panel

      JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B
    3. Seo, JH; Chung, WJ; Yoon, CK; Kim, JK; Whang, KW
      Two-dimensional modeling of a surface type alternating current plasma display panel cell: Discharge dynamics and address voltage effects

      IEEE TRANSACTIONS ON PLASMA SCIENCE
    4. Kim, JK; Yang, JH; Seo, JH; Whang, KW
      The improvement of discharge characteristics by the use of asymmetric pulse driving in an alternating current plasma display panel

      IEEE TRANSACTIONS ON PLASMA SCIENCE
    5. Kim, JH; Lee, JH; Whang, KW; Choi, YW
      Temporal behavior of the wall voltage in a surface-type alternating current plasma display panel cell using laser induced fluorescence spectroscopy

      JOURNAL OF APPLIED PHYSICS
    6. Kim, JK; Yang, JH; Chung, WJ; Whang, KW
      The addressing characteristics of an alternating current plasma display panel adopting a ramping reset pulse

      IEEE TRANSACTIONS ON ELECTRON DEVICES
    7. Uhm, HS; Choi, EH; Cho, GS; Whang, KW
      Electrical breakdown voltage in a mixed gas

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS
    8. Kwon, SJ; Hong, KC; Sung, JH; Lee, CH; Whang, KW; Yoon, CK; Lee, JD; Hong, SH; Park, SW; Kwon, YB
      Operational PDP fabrication by using a fully vacuum in-line sealing technology

      JOURNAL OF THE KOREAN PHYSICAL SOCIETY
    9. Yoon, CK; Seo, JH; Whang, KW
      Spatio-temporal characteristics of infrared and vacuum ultraviolet emission from a surface discharge type AC plasma display panel cell with He-Xe andNe-Xe gas mixture

      IEEE TRANSACTIONS ON PLASMA SCIENCE
    10. Kim, YT; Whang, KW
      Two-dimensional numerical simulation of radical generation in the positivecorona discharge

      IEEE TRANSACTIONS ON PLASMA SCIENCE
    11. Seo, JH; Jeong, HS; Lee, JY; Yoon, CK; Kim, JK; Whang, KW
      Vacuum ultraviolet emission characteristics from He-Ne-Xe gas discharge inan alternating current plasma display panel cell

      JOURNAL OF APPLIED PHYSICS
    12. Jeon, BS; Hong, KY; Yoo, JS; Whang, KW
      Studies on the phosphor screen prepared by electrophoretic deposition for plasma display panel applications

      JOURNAL OF THE ELECTROCHEMICAL SOCIETY
    13. Kim, SS; Chang, CS; Yoon, NS; Whang, KW
      Inductively coupled plasma heating in a weakly magnetized plasma

      PHYSICS OF PLASMAS
    14. Jeong, HS; Seo, JH; Yoon, CK; Kim, JK; Whang, KW
      Time-resolved imaging of VUV emission from a He-Xe micro surface discharge

      IEEE TRANSACTIONS ON PLASMA SCIENCE
    15. Lee, HJ; Tae, HS; Kim, YT; Whang, KW
      Electric field in magnetized inductively coupled plasma

      IEEE TRANSACTIONS ON PLASMA SCIENCE
    16. Jeong, HS; Shin, BJ; Whang, KW
      Two-dimensional multifluid modeling of the He-Xe discharge in an AC plasmadisplay panel

      IEEE TRANSACTIONS ON PLASMA SCIENCE
    17. Moon, KS; Lee, JW; Whang, KW
      Electron ejection from MgO thin films by low energy noble gas ions: Energydependence and initial instability of the secondary electron emission coefficient

      JOURNAL OF APPLIED PHYSICS
    18. Jeong, HS; Seo, JH; Yoon, CK; Kim, JK; Whang, KW
      Characteristics of vacuum ultraviolet emission from a surface discharge type alternating current plasma display panel cell

      JOURNAL OF APPLIED PHYSICS
    19. Kim, HS; Lee, WJ; Yeom, GY; Kim, JH; Whang, KW
      Etch-induced physical damage and contamination during highly selective oxide etching using C4F8/H-2 helicon wave plasmas

      JOURNAL OF THE ELECTROCHEMICAL SOCIETY
    20. LEE HJ; KIM JK; KIM JH; WHANG KW; KIM JH; JOO JH
      SELECTIVE SIO2 SI3N4 ETCHING IN MAGNETIZED INDUCTIVELY-COUPLED C4F8 PLASMA/

      Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena
    21. JOO SJ; YOON E; HWANG SH; WHANG KW; CHUN SK; KIM YD
      GROWTH OF SIGE SI MULTIPLE-QUANTUM WELLS BY ULTRA-HIGH-VACUUM ELECTRON-CYCLOTRON-RESONANCE CHEMICAL-VAPOR-DEPOSITION/

      Thin solid films
    22. KIM JH; LEE HJ; KIM YT; WHANG KW; JOO JH
      EFFECTS OF THE AXIAL EXTERNAL MAGNETIC-FIELD ON THE REDUCTION OF THE DIELECTRIC WINDOW DAMAGE DUE TO CAPACITIVE COUPLING IN THE INDUCTIVELY-COUPLED PLASMA

      Journal of vacuum science & technology. A. Vacuum, surfaces, and films
    23. NAM WJ; YEOM GY; KIM JH; WHANG KW; YOON JK
      PHYSICAL DAMAGE AND CONTAMINATION BY MAGNETIZED INDUCTIVELY-COUPLED PLASMAS AND EFFECTS OF VARIOUS CLEANING AND ANNEALING METHODS

      Journal of vacuum science & technology. A. Vacuum, surfaces, and films
    24. DOH HH; YEON CK; WHANG KW
      EFFECTS OF BIAS FREQUENCY ON REACTIVE ION ETCHING LAG IN AN ELECTRON-CYCLOTRON-RESONANCE PLASMA-ETCHING SYSTEM

      Journal of vacuum science & technology. A. Vacuum, surfaces, and films
    25. YEON CK; WHANG KW
      STUDY OF PARTICULATE FORMATION AND ITS CONTROL BY A RADIO-FREQUENCY POWER MODULATION IN THE REACTIVE ION ETCHING PROCESS OF SIO2 WITH CF4 H-2 PLASMA/

      Journal of vacuum science & technology. A. Vacuum, surfaces, and films
    26. KIM YD; HWANG SH; WHANG KW; YOON E; KLEIN MV; BARIBEAU JM
      OBSERVATION OF E-2 PEAK SPLITTING OF SI-GE SHORT-PERIOD SUPERLATTICE

      Journal of the Korean Physical Society
    27. WHANG KW; LEE JY; HWANG JY; PARK JH; NORRIS D
      THE DIFFERENT PATTERNS OF HEAT-SHOCK PROTEIN EXPRESSION IN HUMAN EPIDERMAL-CELLS VS DERMAL CELLS AFTER UV-RADIATION

      Journal of investigative dermatology
    28. KIM YD; KLEIN MV; BARIBEAU JM; HWANG SH; WHANG KW; YOON E
      SPECTROSCOPIC ELLIPSOMETRY STUDY ON E-2 PEAK SPLITTING OF SI-GE SHORT-PERIOD SUPERLATTICES

      Journal of applied physics
    29. HWANG KH; PARK JW; YOON E; WHANG KW; LEE JY
      AMORPHOUS (100) PLATELET FORMATION IN (100)SI INDUCED BY HYDROGEN PLASMA TREATMENT

      Journal of applied physics
    30. HWANG KH; YOON EJ; WHANG KW; LEE JY
      MECHANISM OF SURFACE-ROUGHNESS IN HYDROGEN PLASMA-CLEANED (100)SILICON AT LOW-TEMPERATURES

      Journal of the Electrochemical Society
    31. LEE HJ; YANG ID; WHANG KW
      THE EFFECTS OF MAGNETIC-FIELDS ON A PLANAR INDUCTIVELY-COUPLED ARGON PLASMA

      Plasma sources science & technology
    32. DOH HH; KIM JH; LEE SH; WHANG KW
      MECHANISM OF SELECTIVE SIO2 SI ETCHING WITH FLUOROCARBON GASES (CF4, C4F8) AND HYDROGEN MIXTURE IN ELECTRON-CYCLOTRON-RESONANCE PLASMA-ETCHING SYSTEM/

      Journal of vacuum science & technology. A. Vacuum, surfaces, and films
    33. LEE HJ; KIM JH; WHANG KW; JOO JH
      EFFECTS OF MAGNETIC-FIELD ON OXIDE ETCHING CHARACTERISTICS IN PLANAR TYPE RADIO-FREQUENCY INDUCTIVELY-COUPLED PLASMA

      Journal of vacuum science & technology. A. Vacuum, surfaces, and films
    34. HWANG SH; EO YP; SEO JH; WHANG KW; YOON E; TAE HS
      NONCONTACT MINORITY-CARRIER LIFETIME MEASUREMENT OF SI AND SIGE EPILAYERS PREPARED BY ULTRAHIGH-VACUUM ELECTRON-CYCLOTRON-RESONANCE CHEMICAL-VAPOR-DEPOSITION

      Journal of vacuum science & technology. A. Vacuum, surfaces, and films
    35. KIM HS; NAM WJ; YEOM GY; LEE HJ; KIM JH; WHANG KW
      STUDY OF RADIATION-DAMAGE AND CONTAMINATION BY MAGNETIZED INDUCTIVELY-COUPLED PLASMA-ETCHING

      Journal of vacuum science & technology. A. Vacuum, surfaces, and films
    36. PARK JW; HWANG KH; JOO SJ; YOON E; HWANG SH; WHANG KW
      IN-SITU BORON DOPING OF SI AND SI1-XGEX EPITAXIAL LAYERS BY ULTRAHIGH-VACUUM ELECTRON-CYCLOTRON-RESONANCE CHEMICAL-VAPOR-DEPOSITION

      Journal of vacuum science & technology. A. Vacuum, surfaces, and films
    37. DOH HH; KIM JH; WHANG KW; LEE SH
      EFFECT OF HYDROGEN ADDITION TO FLUOROCARBON GASES (CF4, C4F8) IN SELECTIVE SIO2 SI ETCHING BY ELECTRON-CYCLOTRON-RESONANCE PLASMA/

      Journal of vacuum science & technology. A. Vacuum, surfaces, and films
    38. TAE HS; PARK SJ; HWANG SH; HWANG KH; YOON E; WHANG KW; SONG SA
      LOW-TEMPERATURE IN-SITU CLEANING OF SILICON(100) SURFACE BY ELECTRON-CYCLOTRON-RESONANCE HYDROGEN PLASMA

      Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena
    39. YEON CK; WHANG KW
      GENERATION AND BEHAVIOR OF PARTICULATES IN A RADIO-FREQUENCY EXCITED CH4 PLASMA

      Journal of vacuum science & technology. A. Vacuum, surfaces, and films
    40. YEON CK; KIM JH; WHANG KW
      DYNAMICS OF PARTICULATES IN THE AFTERGLOW OF A RADIO-FREQUENCY EXCITED PLASMA

      Journal of vacuum science & technology. A. Vacuum, surfaces, and films
    41. CHOI KC; WHANG KW
      NUMERICAL-ANALYSIS OF THE MICRODISCHARGE IN A DC PLASMA DISPLAY PANELBY 2-DIMENSIONAL MULTIFLUID EQUATIONS

      IEEE transactions on plasma science
    42. TAE HS; HWANG SH; PARK SJ; YOON E; WHANG KW
      EFFECTS OF PROCESS PARAMETERS ON LOW-TEMPERATURE SILICON HOMOEPITAXY BY ULTRAHIGH-VACUUM ELECTRON-CYCLOTRON-RESONANCE CHEMICAL-VAPOR-DEPOSITION

      Journal of applied physics
    43. HWANG KH; YOON E; WHANG KW; LEE JY
      SURFACE-ROUGHNESS AND DEFECT MORPHOLOGY IN ELECTRON-CYCLOTRON-RESONANCE HYDROGEN PLASMA CLEANED (100)SILICON AT LOW-TEMPERATURES

      Applied physics letters
    44. WHANG KW; LEE SH; DOH HH; KIM JS
      DAMAGE AND CONTAMINATION IN LOW-TEMPERATURE ELECTRON-CYCLOTRON-RESONANCE PLASMA-ETCHING

      Journal of vacuum science & technology. A. Vacuum, surfaces, and films
    45. TAE HS; HWANG SH; PARK SJ; YOON E; WHANG KW
      LOW-TEMPERATURE SILICON HOMOEPITAXY BY ULTRAHIGH-VACUUM ELECTRON-CYCLOTRON-RESONANCE CHEMICAL-VAPOR-DEPOSITION

      Applied physics letters


ASDD Area Sistemi Dipartimentali e Documentali, Università di Bologna, Catalogo delle riviste ed altri periodici
Documento generato il 28/10/20 alle ore 09:57:12