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La ricerca find articoli where authors phrase all words ' WILLANDER M' sort by level,fasc_key/DESCEND, pagina_ini_num/ASCEND ha restituito 258 riferimenti
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    1. Fu, Y; Willander, M; Liu, J
      Statistics of electric conductance through anisotropically conductive adhesive

      IEEE TRANSACTIONS ON COMPONENTS AND PACKAGING TECHNOLOGIES
    2. Fu, Y; Patel, CJ; Willander, M
      Designing nanometre silicon-on-insulator MOSFET with buried Si1-xGex quantum well channel

      PHYSICA E
    3. Averkiev, NS; Golub, LE; Tarasenko, SA; Willander, M
      Theory of magneto-oscillation effects in quasi-two-dimensional semiconductor structures

      JOURNAL OF PHYSICS-CONDENSED MATTER
    4. Turan, R; Aslan, B; Nur, O; Yousif, MYA; Willander, M
      Observation of strain relaxation in Si1-xGex layers by optical and electrical characterisation of a Schottky junction

      APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING
    5. Mamor, M; Fu, Y; Nur, O; Willander, M; Bengtsson, S
      Leakage current and capacitance characteristics of Si/SiO2/Si single-barrier varactor

      APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING
    6. Fu, Y; Willander, M; Lundgren, P
      Current and capacitance characteristics of a metal-insulator-semiconductorstructure with an ultrathin oxide layer

      SUPERLATTICES AND MICROSTRUCTURES
    7. Fu, Y; Bagge, S; Gustavsson, M; Haglund, A; Willander, M; Li, N; Li, N; Lu, W; Liu, XQ; Yuan, XZ; Li, ZF; Dou, HF; Shen, SC
      Infrared radiation transmission through GaAs/AlGaAs quantum well infrared photodetector

      SUPERLATTICES AND MICROSTRUCTURES
    8. Lu, W; Liu, XQ; Li, ZF; Shen, SC; Zhao, QX; Fu, Y; Willander, M; Tan, HH; Jagadish, C; Zou, J; Cockayne, DJH
      Carrier transfer between V-grooved quantum wire and vertical quantum well

      PHYSICS LETTERS A
    9. Fu, Y; Willander, M; Liu, J
      Spatial distribution of metal fillers in isotropically conductive adhesives

      JOURNAL OF ELECTRONIC MATERIALS
    10. Atkinson, A; Jain, SC; Maes, HE; Pinardi, K; Willander, M
      Depth profiling of strain using micro-Raman measurements

      SEMICONDUCTOR SCIENCE AND TECHNOLOGY
    11. Jain, SC; Decoutere, S; Willander, M; Maes, HE
      SiGeHBT for application in BiCMOS technology: II. Design, technology and performance

      SEMICONDUCTOR SCIENCE AND TECHNOLOGY
    12. Yousif, MYA; Willander, M; Lundgren, P; Caymax, M
      Behaviour of poly-Si1-xGex-gated MOS capacitors under different electricalstress conditions in the direct tunnelling regime

      SEMICONDUCTOR SCIENCE AND TECHNOLOGY
    13. Jain, SC; Decoutere, S; Willander, M; Maes, HE
      SiGeHBTs for application in BiCMOS technology: I. Stability, reliability and material parameters

      SEMICONDUCTOR SCIENCE AND TECHNOLOGY
    14. Ryzhii, V; Khmyrova, I; Pipa, V; Mitin, V; Willander, M
      Device model for quantum dot infrared photodetectors and their dark-current characteristics

      SEMICONDUCTOR SCIENCE AND TECHNOLOGY
    15. Ouacha, H; Nur, O; Fu, Y; Willander, M; Ouacha, A; Turan, R
      Comparison between the noise properties of PtSi/p-Si1-xGex and Pt/p-Si1-xGe Schottky contacts prepared by co-sputtering and thermal reaction

      SEMICONDUCTOR SCIENCE AND TECHNOLOGY
    16. Sakalas, P; Garcia, M; Zirath, H; Willander, M
      Microwave noise in InP/InGaAs and GaAs/AlGaAs heterojunction bipolar transistors

      SEMICONDUCTOR SCIENCE AND TECHNOLOGY
    17. Averkiev, NS; Golub, LE; Tarasenko, SA; Willander, M
      Effect of intersubband scattering on weak localization in two-dimensional systems - art. no. 045405

      PHYSICAL REVIEW B
    18. Zhao, QX; Wongmanerod, S; Willander, M; Holtz, PO; Wang, SM; Sadeghi, M
      Electronic structure of beryllium acceptors confined in GaAs/AlxGa1-xAs quantum wells - art. no. 195317

      PHYSICAL REVIEW B
    19. Zhao, QX; Willander, M; Bergman, JP; Holtz, PO; Lu, W; Shen, SC
      Dynamic properties of radiative recombination in p-type delta-doped layersin GaAs - art. no. 125337

      PHYSICAL REVIEW B
    20. Mamor, M; Willander, M; Auret, FD; Meyer, WE; Sveinbjornsson, E
      Configurationally metastable defects in irradiated epitaxially grown boron-doped p-type Si - art. no. 045201

      PHYSICAL REVIEW B
    21. Yousif, MYA; Nur, O; Willander, M; Patel, CJ; Hernandez, C; Campidelli, Y; Bensahel, D; Kyutt, RN
      Direct assessment of relaxation and defect propagation in different as-grown and in situ post-growth annealed thin Ge/Si and step-graded Si1-xGex/Si buffer layers

      SOLID-STATE ELECTRONICS
    22. Myrberg, T; Jacob, AP; Nur, O; Zhao, QX; Willander, M; DeBoer, WB
      Relaxation and photoluminscence of different post-processed Si/Si1-xGex quantum well structures grown by CVD

      SOLID-STATE ELECTRONICS
    23. Yousif, MYA; Nur, O; Willander, M
      Recent critical issues in Si/Si1-xGex/Si heterostructure FET devices

      SOLID-STATE ELECTRONICS
    24. Jacob, AP; Zhao, QX; Willander, M; Baron, T; Magnea, N
      Hydrogen passivation of nitrogen acceptors confined in CdZnTe quantum wellstructures

      JOURNAL OF APPLIED PHYSICS
    25. Liu, XQ; Sasaki, A; Ohno, N; Li, ZF; Lu, W; Shen, SC; Fu, Y; Willander, M; Tan, HH; Jagadish, C
      Evidence of blocking effect on carrier trapping process by necking region in very narrow AlGaAs/GaAs V-grooved quantum wire structure

      JOURNAL OF APPLIED PHYSICS
    26. Fu, Y; Willander, M; Li, ZF; Lu, W
      Dimensionality of photoluminescence spectrum of GaAs/AlGaAs system

      JOURNAL OF APPLIED PHYSICS
    27. Jain, SC; Geens, W; Mehra, A; Kumar, V; Aernouts, T; Poortmans, J; Mertens, R; Willander, M
      Injection- and space charge limited-currents in doped conducting organic materials

      JOURNAL OF APPLIED PHYSICS
    28. Fu, Y; Willander, M; Miao, ZL; Lu, W
      Photoluminescence and photo-modulated reflectance spectra of ion-implantedGaAs/AlGaAs coupled quantum wells

      JOURNAL OF APPLIED PHYSICS
    29. Fu, Y; Willander, M; Liu, XQ; Lu, W; Shen, SC; Tan, HH; Jagadish, C; Zou, J; Cockayne, DJH
      Optical transition in infrared photodetector based on V-groove Al0.5Ga0.5As/GaAs multiple quantum wire

      JOURNAL OF APPLIED PHYSICS
    30. Fu, Y; Wang, TH; Willander, M
      Designing two-dimensional electron gases in GaAs/InGaAs/AlGaAs, delta-doped AlGaAs/GaAs, and AlGaAs/InGaAs/GaAs heterostructures for single electron transistor application

      JOURNAL OF APPLIED PHYSICS
    31. Fu, Y; Willander, M; Lundgren, P; Aderstedt, E
      Enhanced tunnel current through thin oxide due to single-defect scattering

      APPLIED PHYSICS LETTERS
    32. Fu, Y; Willander, M; Wang, TH
      Etching trenches to effectively create electron quantum wires for single-electron-transistor applications

      APPLIED PHYSICS LETTERS
    33. Ryzhii, V; Khmyrova, I; Mitin, V; Stroscio, M; Willander, M
      On the detectivity of quantum-dot infrared photodetectors

      APPLIED PHYSICS LETTERS
    34. Pinardi, K; Lai, ZH; Vogel, D; Kang, YL; Liu, J; Liu, S; Haug, R; Willander, M
      Effect of bump height on the strain variation during the thermal cycling test of ACA flip-chip joints

      IEEE TRANSACTIONS ON COMPONENTS AND PACKAGING TECHNOLOGIES
    35. Fu, Y; Wang, YL; Wang, XT; Liu, JH; Lai, ZH; Chen, GL; Willander, M
      Experimental and theoretical characterization of electrical contact in anisotropically conductive adhesive

      IEEE TRANSACTIONS ON ADVANCED PACKAGING
    36. Fu, Y; Willander, M; Lu, W; Liu, XQ; Shen, SC; Jagadish, C; Gal, M; Zou, J; Cockayne, DJH
      Strain effect in a GaAs-In0.25Ga0.75As-Al0.5Ga0.5As asymmetric quantum wire

      PHYSICAL REVIEW B
    37. Ivchenko, EL; Fu, Y; Willander, M
      Exciton polaritons in quantum-dot photonic crystals

      PHYSICS OF THE SOLID STATE
    38. Devyatov, IA; Kupriyanov, MY; Kuzmin, LS; Golubov, AA; Willander, M
      Electronic thermal properties of the interface between a normal metal and a high-temperature superconducting material

      JOURNAL OF EXPERIMENTAL AND THEORETICAL PHYSICS
    39. Li, ZF; Lu, W; Liu, XQ; Shen, XC; Fu, Y; Willander, M; Tan, HH; Jagadish, C
      The micro-photoluminescence of a single V-groove GaAs/AlGaAs quantum wire

      ACTA PHYSICA SINICA
    40. Golub, LE; Averkiev, NS; Willander, M
      Electron spin relaxation in zinc-blende heterostructures

      NANOTECHNOLOGY
    41. Lozovik, YE; Willander, M
      Excitons and magnetoexcitons in coupled quantum nanostructures: the role of a dirty environment

      APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING
    42. Nawaz, M; Mellberg, A; Persson, SHM; Zirath, H; Zhao, QX; Sodervall, U; Willander, M
      Characterization and performance of MOCVD grown 0.14-mu m InP-HEMTs for low voltage applications

      MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY
    43. Fu, Y; Willander, M; Dutta, A; Oda, S
      Carrier conduction in a Si-nanocrystal-based single-electron transistor-I.Effect of gate bias

      SUPERLATTICES AND MICROSTRUCTURES
    44. Fu, Y; Willander, M; Dutta, A; Oda, S
      Carrier conduction in a Si-nanocrystal-based single-electron transistor-II. Effect of drain bias

      SUPERLATTICES AND MICROSTRUCTURES
    45. Fu, Y; Willander, M; Stake, J; Dillner, L; Kollberg, EL
      Carrier conduction through the quantum barrier region in a heterostructurebarrier varactor induced by an ac bias

      SUPERLATTICES AND MICROSTRUCTURES
    46. Fu, Y; Willander, M; Ivchenko, EL
      Photonic dispersions of semiconductor-quantum-dot-array-based photonic crystals in primitive and face-centered cubic lattices

      SUPERLATTICES AND MICROSTRUCTURES
    47. Zhao, QX; Willander, M
      Possible terahertz laser structures based on population inversion induced by resonant states in semiconductors

      PHYSICS LETTERS A
    48. Nawaz, M; Miranda, JM; Sakalas, P; Wang, SM; Zhao, QX; Willander, M; Zirath, H
      Design, processing and characterization of delta-doped channel AlGaAs/InGaAs/GaAs HFETs

      SEMICONDUCTOR SCIENCE AND TECHNOLOGY
    49. Nur, O; Karlsteen, M; Sodervall, U; Willander, M; Patel, CJ; Hernandez, C; Campidelli, Y; Bensahel, D; Kyutt, RN
      Characterization of strain relaxation in low-defect-density thin single and step-graded germanium buffer layers by high-resolution two-dimensional x-ray diffraction mapping

      SEMICONDUCTOR SCIENCE AND TECHNOLOGY
    50. Mamutin, VV; Shubina, TV; Vekshin, VA; Ratnikov, VV; Toropov, AA; Ivanov, SV; Karlsteen, M; Sodervall, U; Willander, M
      Hexagonal InN/sapphire heterostructures: interplay of interface and layer properties

      APPLIED SURFACE SCIENCE
    51. Toropov, AA; Shubina, TV; Sorokin, SV; Kyutt, RN; Ivanov, SV; Pozina, GR; Bergman, JP; Monemar, B; Karlsteen, M; Willander, M
      Excitons as a probe of interface morphology in Cd(Zn) Se/ZnSe heterostructures

      APPLIED SURFACE SCIENCE
    52. Kyutt, RN; Toropov, AA; Shubina, TV; Sorokin, SV; Ivanov, SV; Karlsteen, M; Willander, M
      Spatial distribution of Cd in CdSe/ZnSe superlattices studied by X-ray diffraction

      APPLIED SURFACE SCIENCE
    53. Zhao, QX; Karlsteen, M; Willander, M; Wang, SM; Sadeghi, M
      Effects of indium concentration on the electronic structures of Be accepters confined in InxGa1-xAs/Al0.3Ga0.7As quantum-well structures

      PHYSICAL REVIEW B
    54. Zhao, QX; Wongmanerod, S; Willander, M; Holtz, PO; Selvig, E; Fimland, BO
      Effects of monolayer AlAs insertion in modulation doped GaAs/AlxGa1-xAs quantum-well structures

      PHYSICAL REVIEW B
    55. Yun, F; Hinds, BJ; Hatatani, S; Oda, S; Zhao, QX; Willander, M
      Study of structural and optical properties of nanocrystalline silicon embedded in SiO2

      THIN SOLID FILMS
    56. Yousif, MYA; Friesel, M; Willander, M; Lundgren, P; Caymax, M
      On the performance of in situ B-doped P+ poly-Si1-xGex gate material for nanometer scale MOS technology

      SOLID-STATE ELECTRONICS
    57. Toropov, AA; Shubina, TV; Kyutt, RN; Sorokin, SV; Ivanov, SV; Fedorov, DL; Karlsteen, M; Willander, M
      Excitonic spectrum in CdSe/ZnSe disordered superlattices

      PHYSICA STATUS SOLIDI A-APPLIED RESEARCH
    58. Zhao, QX; Zsebok, O; Sodervall, U; Karlsteen, M; Willander, M; Liu, XQ; Chen, YD; Lu, W; Shen, SC
      GaAs film deposited on SrTiO3 substrate by molecular beam epitaxy

      JOURNAL OF CRYSTAL GROWTH
    59. Zhao, QX; Willander, M; Lu, W; Liu, XQ; Shen, SC; Tan, HH; Jagadish, C; Zou, J; Cockayne, DJH
      Optical properties of arsenic ions implanted GaAs/AlGaAs V-grooved quantumwires

      JOURNAL OF APPLIED PHYSICS
    60. Fu, Y; Willander, M
      Alloy scattering in GaAs/AlGaAs quantum well infrared photodetector

      JOURNAL OF APPLIED PHYSICS
    61. Ouacha, H; Mamor, M; Willander, M; Ouacha, A; Auret, FD
      Impact of plasma etching on the noise performance of Ti/p-Si and Ti/p-Si1-xGex Schottky contacts

      JOURNAL OF APPLIED PHYSICS
    62. Jain, SC; Willander, M; Narayan, J; Van Overstraeten, R
      III-nitrides: Growth, characterization, and properties

      JOURNAL OF APPLIED PHYSICS
    63. Fu, Y; Li, N; Karlsteen, M; Willander, M; Li, N; Xu, WL; Lu, W; Shen, SC
      Thermoexcited and photoexcited carrier transports in a GaAs/AlGaAs quantumwell infrared photodetector

      JOURNAL OF APPLIED PHYSICS
    64. Fu, Y; Mamor, M; Willander, M; Bengtsson, S; Dillner, L
      n-Si/SiO2/Si heterostructure barrier varactor diode design

      APPLIED PHYSICS LETTERS
    65. Mamor, M; Ouacha, H; Willander, M; Auret, FD; Goodman, SA; Ouacha, A; Sveinbjornsson, E
      High-energy He-ion irradiation-induced defects and their influence on the noise behavior of Pd/n-Si1-xGex Schottky junctions

      APPLIED PHYSICS LETTERS
    66. Liu, XQ; Li, N; Li, ZF; Lu, W; Shen, SC; Fu, Y; Willander, M; Tan, HH; Jagadish, C; Zou, J
      Investigation of AlGaAs/GaAs V-grooved quantum wire infrared photodetectorstructures

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
    67. Dutta, A; Oda, S; Fu, Y; Willander, M
      Electron transport in nanocrystalline Si based single electron transistors

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
    68. Wang, ZY; Oda, S; Karlsteen, M; Sodervall, U; Willander, M
      Structure analysis of SrTiO3/BaTiO3 strained superlattice films prepared by atomic-layer metalorganic chemical vapor deposition

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
    69. Ryzhii, V; Pipa, V; Khmyrova, I; Mitin, V; Willander, M
      Dark current in quantum dot infrared photodetectors

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS
    70. Lozovik, YE; Berman, OL; Willander, M
      Superfluidity of indirect biexcitons in superlattices

      JOURNAL OF EXPERIMENTAL AND THEORETICAL PHYSICS
    71. Vystavkin, AN; Shuvaev, DV; Kuz'min, LS; Tarasov, MA; Aderstedt, E; Willander, M; Claeson, T
      Normal-metal hot-electron bolometer with Andreev reflection from superconductor boundaries

      JOURNAL OF EXPERIMENTAL AND THEORETICAL PHYSICS
    72. Kuzmin, L; Chouvaev, D; Tarasov, M; Sundquist, P; Willander, M; Claeson, T
      On the concept of a normal metal hot-electron microbolometer for space applications

      IEEE TRANSACTIONS ON APPLIED SUPERCONDUCTIVITY
    73. Devyatov, IA; Kupriyanov, MY; Golubov, AA; Kuzmin, L; Willander, M
      Heat transport across the interface between normal metal and d-wave superconductor

      IEEE TRANSACTIONS ON APPLIED SUPERCONDUCTIVITY
    74. Chen, YD; Liu, XQ; Lu, W; Shi, GL; Shen, XC; Zhao, QX; Willander, M
      Study of the inter-band transition of the GaAs single-crystal film on SrTiO3 substrate by MBE

      WULI XUEBAO
    75. Fu, Y; Willander, M
      Suppression of the tunneling effect by shallow junctions in field-effect transistor

      SUPERLATTICES AND MICROSTRUCTURES
    76. Fu, Y; Willander, M; Liu, XQ; Lu, W; Shen, SC; Tan, HH; Yuan, S; Jagadish, C
      Energy sublevels in an Al0.5Ga0.5As/GaAs/Al0.5Ga0.5As quantum wire

      SUPERLATTICES AND MICROSTRUCTURES
    77. Li, N; Li, N; Lu, W; Liu, XQ; Yuan, XZ; Li, ZF; Dou, HF; Shen, SC; Fu, Y; Willander, M; Fu, L; Tan, HH; Jagadish, C; Johnston, MB; Gal, M
      Proton implantation and rapid thermal annealing effects on GaAs/AlGaAs quantum well infrared photodetectors

      SUPERLATTICES AND MICROSTRUCTURES
    78. Lozovik, YE; Verzakov, SA; Willander, M
      Superfluidity of indirect excitons in a quantum dot

      PHYSICS LETTERS A
    79. Shubina, TV; Mamutin, VV; Vekshin, VA; Ratnikov, VV; Toropov, AA; Sitnikova, AA; Ivanov, SV; Karlsteen, M; Sodervall, U; Willander, M; Pozina, G; Bergman, JP; Monemar, B
      Optical properties of an AlInN interface layer spontaneously formed in hexagonal InN/sapphire heterostructures

      PHYSICA STATUS SOLIDI B-BASIC RESEARCH
    80. Pozina, G; Bergman, JP; Monemar, B; Mamutin, VV; Shubina, TV; Vekshin, VA; Toropov, AA; Ivanov, SV; Karlsteen, M; Willander, M
      Optical and structural characterization of Ga(In)N three-dimensional nanostructures grown by plasma-assisted molecular beam epitaxy

      PHYSICA STATUS SOLIDI B-BASIC RESEARCH
    81. Ivchenko, EL; Willander, M
      Exciton polaritons in periodic nanostructures

      PHYSICA STATUS SOLIDI B-BASIC RESEARCH
    82. Lozovik, YE; Berman, OL; Willander, M
      Superfluidity of indirect biexcitons in superlattices

      EUROPHYSICS LETTERS
    83. Grahn, KJ; Fu, Y; Willander, M
      Hole mobility and diffusion coefficient in strained and relaxed doped GexSi1-x alloys

      PHYSICA SCRIPTA
    84. Zhao, QX; Nawaz, M; Karlsteen, M; Sodervall, U; Willander, M; Stenarson, J; Zirath, H; Strupinski, W
      Optical and electrical characterization of MOCVD-grown modulation-doped field effect transistors

      SEMICONDUCTOR SCIENCE AND TECHNOLOGY
    85. Mamor, M; Auret, FD; Willander, M; Goodman, SA; Myburg, G; Meyer, F
      Electronic properties of defects introduced in strained, epitaxial p-type SiGe alloys during sputter etching in an argon plasma

      SEMICONDUCTOR SCIENCE AND TECHNOLOGY
    86. Mamontov, YV; Willander, M; Lewin, T
      Modelling of high-dimensional diffusion stochastic process with nonlinear coefficients for engineering applications - part I: Approximations for expectation and variance of nonstationary process

      MATHEMATICAL MODELS & METHODS IN APPLIED SCIENCES
    87. Mamontov, YV; Willander, M
      Modelling of high-dimensional diffusion stochastic process with nonlinear coefficients for engineering applications - part II: Approximations for covariance and spectral density of stationary process

      MATHEMATICAL MODELS & METHODS IN APPLIED SCIENCES
    88. Zhao, QX; Willander, M; Holtz, PO; Lu, W; Dou, HF; Shen, SC; Li, G; Jagadish, C
      Radiative recombination in p-type delta-doped layers in GaAs

      PHYSICAL REVIEW B-CONDENSED MATTER
    89. Toropov, AA; Shubina, TV; Sorokin, SV; Lebedev, AV; Kyutt, RN; Ivanov, SV; Karlsteen, M; Willander, M; Pozina, GR; Bergman, JP; Monemar, B
      Broadening of the excitonic mobility edge in a macroscopically disordered CdSe/ZnSe short-period superlattice

      PHYSICAL REVIEW B-CONDENSED MATTER
    90. Fu, Y; Liu, J; Willander, M
      Conduction modelling of a conductive adhesive with bimodal distribution ofconducting element

      INTERNATIONAL JOURNAL OF ADHESION AND ADHESIVES
    91. Yousif, MYA; Chretien, O; Nur, O; Willander, M
      Short-channel effects in Si/Si1-xGex retrograde double quantum well p-MOSFETs

      SOLID-STATE ELECTRONICS
    92. Mamutin, VV; Vekshin, VA; Davydov, VY; Ratnikov, VV; Shubina, TV; Ivanov, SV; Kopev, PS; Karlsteen, M; Soderwall, U; Willander, M
      MBE growth of hexagonal InN films on sapphire with different initial growth stages

      PHYSICA STATUS SOLIDI A-APPLIED RESEARCH
    93. Mamutin, VV; Sorokin, SV; Jmerik, VN; Shubina, TV; Ratnikov, VV; Ivanov, SV; Kop'ev, PS; Karlsteen, M; Sodervall, U; Willander, M
      Plasma-assisted MBE growth of GaN and InGaN on different substrates

      JOURNAL OF CRYSTAL GROWTH
    94. Toropov, AA; Shubina, TV; Sorokin, SV; Sedova, IV; Sitnikova, AA; Ivanov, SV; Karlsteen, M; Willander, M; Bergman, JP; Pozina, GR; Monemar, B
      Optical properties of nanostructures self-organized in CdSe ZnSe fractional monolayer superlattices

      JOURNAL OF CRYSTAL GROWTH
    95. Mamor, M; Nur, O; Karlsteen, M; Willander, M; Auret, FD
      Fermi-level pinning and Schottky barrier heights on epitaxially grown fully strained and partially relaxed n-type Si1-xGex layers

      JOURNAL OF APPLIED PHYSICS
    96. Zhao, QX; Willander, M
      Theoretical investigation of shallow acceptors confined in Si/Si1-xGex quantum well structures

      JOURNAL OF APPLIED PHYSICS
    97. Ouacha, H; Willander, M; Wahab, Q; Ouacha, A; Holmen, G
      Noise in 6H-SiC ion implanted p-n diodes: Effect of the active area on thenoise properties of these junctions

      JOURNAL OF APPLIED PHYSICS
    98. Zhao, QX; Willander, M
      Stress dependence of infrared absorption frequencies and oscillator strengths of acceptors confined in GaAs/AlGaAs quantum wells

      JOURNAL OF APPLIED PHYSICS
    99. Fu, YY; Willander, M; Lu, W; Xu, WL; Li, N; Li, N; Liu, XQ; Chen, YD; Shen, SC
      Near-field coupling effect in normal-incidence absorption of quantum-well infrared photodetectors

      JOURNAL OF APPLIED PHYSICS
    100. Kyutt, RN; Toropov, AA; Sorokin, SV; Shubina, TV; Ivanov, SV; Karlsteen, M; Willander, M
      Broadening of submonolayer CdSe sheets in CdSe ZnSe superlattices studied by x-ray diffraction

      APPLIED PHYSICS LETTERS


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Documento generato il 29/10/20 alle ore 06:53:49