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La ricerca find articoli where authors phrase all words ' Uchitomi, N' sort by level,fasc_key/DESCEND, pagina_ini_num/ASCEND ha restituito 21 riferimenti
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    1. Ikeda, YM; Nagaoka, M; Wakimoto, H; Seshita, T; Mihara, M; Yoshimura, M; Tanabe, Y; Oya, K; Kitaura, T; Uchitomi, N
      Single 3-V supply operation GaAs linear power MESFET amplifier for 5.8-GHzISM band applications

      IEICE TRANSACTIONS ON ELECTRONICS
    2. Hirose, M; Kitaura, Y; Uchitomi, N
      A large-signal model of self-aligned gate GaAsFET's for high-efficiency power-amplifier design

      IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES
    3. KAWAKYU KK; IKEDA Y; NAGAOKA M; KAMEYAMA A; UCHITOMI N
      A 2-V OPERATION RESONANT-TYPE T R-SWITCH WITH LOW DISTORTION CHARACTERISTICS FOR 1,9-GHZ PHS/

      IEICE transactions on electronics
    4. NAGAOKA M; WAKIMOTO H; SESHITA T; KAWAKYU KK; KITAURA Y; KAMEYAMA A; UCHITOMI N
      SINGLE LOW 2.4-V SUPPLY OPERATION GAAS POWER MES-FET AMPLIFIER WITH LOW-DISTORTION GAIN-VARIABLE ATTENUATOR FOR 1.9-GHZ PHS APPLICATIONS

      IEICE transactions on electronics
    5. NAGAOKA M; NAGASAWA H; KAWAKYU KK; HONMYO K; ISHIDA S; KITAURA Y; UCHITOMI N
      0.012-CC MINIATURIZED GAAS P-POCKET POWER MESFET AMPLIFIER OPERATING WITH A SINGLE VOLTAGE SUPPLY FOR PHS APPLICATIONS

      IEICE transactions on electronics
    6. NISHIHORI K; KITAURA Y; HIROSE M; MIHARA M; NAGAOKA M; UCHITOMI N
      A SELF-ALIGNED GATE GAAS-MESFET WITH P-POCKET LAYERS FOR HIGH-EFFICIENCY LINEAR POWER-AMPLIFIERS

      I.E.E.E. transactions on electron devices
    7. NISHIHORI K; KITAURA Y; TANABE Y; MIHARA H; YOSHIMURA M; NITTA T; KAKIUCHI Y; UCHITOMI N
      A SELF-ALIGNED GATE ALGAAS GAAS HETEROSTRUCTURE FIELD-EFFECT TRANSISTOR WITH AN ION-IMPLANTED BURIED-CHANNEL FOR USE IN HIGH-EFFICIENCY POWER-AMPLIFIERS/

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
    8. NISHIHORI K; ISHIDA K; KITAURA Y; UCHITOMI N
      THERMAL-ANALYSIS OF GAAS POWER MONOLITHIC MICROWAVE ICS MOUNTED WITH EPOXY ATTACHMENT

      IEEE transactions on components, packaging, and manufacturing technology. Part A
    9. KAMEYAMA A; KAWAKYU KK; IKEDA Y; NAGAOKA M; ISHIDA K; NITTA T; YOSHIMURA M; KITAURA Y; UCHITOMI N
      A RESONANT-TYPE GAAS-SWITCH-IC WITH LOW DISTORTION CHARACTERISTICS FOR 1.9-GHZ-PHS

      IEICE transactions on electronics
    10. SASAKI T; OTAKA S; MAEDA T; UMEDA T; NISHIHORI K; KAMEYAMA A; HIROSE M; KITAURA Y; UCHITOMI N
      GATE CURRENT CONTROL METHOD BY PULL-DOWN FETS FOR 0-28-DB GAAS VARIABLE ATTENUATOR IN DIRECT-CONVERSION MODULATOR-IC FOR 1.9-GHZ-PHS

      IEICE transactions on electronics
    11. NISHIHORI K; KAMEYAMA A; KITAURA Y; TANABE Y; MIHARA M; YOSHIMURA M; HIROSE M; UCHITOMI N
      A BURIED-CHANNEL SELF-ALIGNED GAAS-MESFET WITH HIGH POWER-EFFICIENCY AND LOW NOISE-FIGURE FOR 1.9-GHZ SINGLE-CHIP FRONT-END MMICS

      IEICE transactions on electronics
    12. TSURUMI H; MAEDA T; TANIMOTO H; SUZUKI Y; SAITO M; YOSHIHARA K; ISHIDA K; UCHITOMI N
      DESIGN STUDY ON RF STAGE FOR MINIATURE PHS TERMINAL

      IEICE transactions on electronics
    13. HIROSE M; MATSUZAWA K; MIHARA M; NITTA T; KAMEYAMA A; UCHITOMI N
      A LIGHTLY DOPED DEEP DRAIN GAAS-MESFET STRUCTURE FOR LINEAR-AMPLIFIERS OF PERSONAL HANDY-PHONE SYSTEMS

      I.E.E.E. transactions on electron devices
    14. NAGAOKA M; INOUE T; KAWAKYU K; OBAYASHI S; KAYANO H; TAKAGI E; TANABE Y; YOSHIMURA M; ISHIDA K; KITAURA Y; UCHITOMI N
      A MONOLITHIC GAAS LINEAR POWER-AMPLIFIER OPERATING WITH A SINGLE LOW 2.7-V SUPPLY FOR 1.9-GHZ DIGITAL MOBILE COMMUNICATION APPLICATIONS

      IEICE transactions on electronics
    15. KITAURA Y; ISHIDA K; MIZOGUCHI T; UCHITOMI N; MATSUNAGA T; MOCHIZUKI M; NII R
      A MECHANISM OF THRESHOLD VOLTAGE CHANGES FOR WNX GATE GAAS-MESFETS INHIGH-TEMPERATURE STORAGE LIFE TESTS

      Microelectronics and reliability
    16. NISHIHORI K; KITAURA Y; NAGAOKA M; TANABE Y; MIHARA M; YOSHIMURA M; HIROSE M; UCHITOMI N
      BURIED-CHANNEL WNX W SELF-ALIGNED GAAS-MESFET PROCESS WITH SELECTIVELY IMPLANTED CHANNEL AND UNDOPED EPITAXIAL SURFACE-LAYERS FOR MMIC APPLICATIONS/

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
    17. KITAURA Y; HASHIMOTO T; INOUE T; ISHIDA K; UCHITOMI N; NII R
      LONG-TERM RELIABILITY OF PT AND MO DIFFUSION-BARRIERS IN TI-PT-AU ANDTI-MO-AU METALLIZATION SYSTEMS FOR GAAS DIGITAL INTEGRATED-CIRCUITS

      Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena
    18. SESHITA T; IKEDA Y; WAKIMOTO H; ISHIDA K; TERADA T; MATSUNAGA T; SUZUKI T; KITAURA Y; UCHITOMI N
      A 20-GHZ 8-BIT MULTIPLEXER IC IMPLEMENTED WITH 0.5-MU-M WNX W-GATE GAAS-MESFETS/

      IEEE journal of solid-state circuits
    19. NAGAOKA M; ISHIDA K; MATSUNAGA T; NISHIHORI K; HASHIMOTO T; YOSHIMURA M; TANABE Y; MIHARA M; KITAURA Y; UCHITOMI N
      REFRACTORY WNX W SELF-ALIGNED GATE GAAS POWER METAL-SEMICONDUCTOR FIELD-EFFECT TRANSISTOR FOR 1.9-GHZ DIGITAL MOBILE COMMUNICATION-SYSTEM OPERATING WITH A SINGLE LOW-VOLTAGE SUPPLY/

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
    20. HARA T; MURAKI T; TAKEDA S; UCHITOMI N; KITAURA Y; GAO GB
      DAMAGE FORMED BY SI+ IMPLANTATION IN GAAS

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS
    21. HARA T; MURAKI T; TAKEDA S; UCHITOMI N; KITAURA Y; GAO GB
      DAMAGE FORMED BY SI+ IMPLANTATION IN GAAS

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS


ASDD Area Sistemi Dipartimentali e Documentali, Università di Bologna, Catalogo delle riviste ed altri periodici
Documento generato il 21/10/20 alle ore 11:15:06