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La ricerca find articoli where authors phrase all words ' UMENO M' sort by level,fasc_key/DESCEND, pagina_ini_num/ASCEND ha restituito 224 riferimenti
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    1. Akahori, K; Wang, G; Okumura, K; Soga, T; Jimbo, T; Umeno, M
      Improvement of the MOCVD-grown InGaP-on-Si towards high-efficiency solar cell application

      SOLAR ENERGY MATERIALS AND SOLAR CELLS
    2. Wang, G; Ogawa, T; Soga, T; Jimbo, T; Umeno, M
      A detailed study of H-2 plasma passivation effects on GaAs/Si solar cell

      SOLAR ENERGY MATERIALS AND SOLAR CELLS
    3. Arokiaraj, J; Okui, H; Taguchi, H; Soga, T; Jimbo, T; Umeno, M
      High-quality thin film GaAs bonded to Si using SeS2 - A new approach for high-efficiency tandem solar cells

      SOLAR ENERGY MATERIALS AND SOLAR CELLS
    4. Krishna, KM; Nukaya, Y; Soga, T; Jimbo, T; Umeno, M
      Solar cells based on carbon thin films

      SOLAR ENERGY MATERIALS AND SOLAR CELLS
    5. Srikanth, K; Rahman, MM; Tanaka, H; Krishna, KM; Soga, T; Mishra, MK; Jimbo, T; Umeno, M
      Investigation of the effect of sol processing parameters on the photoelectrical properties of dye-sensitized TiO2 solar cells

      SOLAR ENERGY MATERIALS AND SOLAR CELLS
    6. Sharda, T; Soga, T; Jimbo, T; Umeno, M
      Growth of nanocrystalline diamond films by biased enhanced microwave plasma chemical vapor deposition

      DIAMOND AND RELATED MATERIALS
    7. Mominuzzaman, SM; Soga, T; Jimbo, T; Umeno, M
      Diamond-like carbon by pulsed laser deposition from a camphoric carbon target: effect of phosphorus incorporation

      DIAMOND AND RELATED MATERIALS
    8. Sharda, T; Soga, T; Jimbo, T; Umeno, M
      High compressive stress in nanocrystalline diamond films grown by microwave plasma chemical vapor deposition

      DIAMOND AND RELATED MATERIALS
    9. Sharda, T; Rahaman, MM; Nukaya, Y; Soga, T; Jimbo, T; Umeno, M
      Structural and optical properties of diamond and nano-diamond films grown by microwave plasma chemical vapor deposition

      DIAMOND AND RELATED MATERIALS
    10. Mominuzzaman, SM; Ebisu, H; Soga, T; Jimbo, T; Umeno, M
      Phosphorus doping and defect studies of diamnond-like carbon films by pulsed laser deposition using camphoric carbon target

      DIAMOND AND RELATED MATERIALS
    11. Hayashi, Y; Krishna, KM; Ebisu, H; Soga, T; Umeno, M; Jimbo, T
      Optical and structural properties of nitrogen doped amorphous carbon filmsgrown by rf plasma-enhanced CVD

      DIAMOND AND RELATED MATERIALS
    12. Saravanan, S; Soga, T; Jimbo, T; Umeno, M
      Deep levels reduction in (NH4)(2)S treated and annealed GaAs epilayer on Si substrate

      MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY
    13. Hayashi, Y; Soga, T; Umeno, M; Jimbo, T
      Origin of yellow luminescence in n-GaN induced by high-energy 7 MeV electron irradiation

      PHYSICA B
    14. Wang, G; Ogawa, T; Kunimasa, F; Umeno, M; Soga, T; Jimbo, T; Egawa, T
      Hydrogen plasma passivation of bulk GaAs and Al0.3Ga0.7As/GaAs multiple-quantum-well structures on Si substrates

      JOURNAL OF ELECTRONIC MATERIALS
    15. Licht, S; Wang, B; Mukerji, S; Soga, T; Umeno, M; Tributsch, H
      Over 18% solar energy conversion to generation of hydrogen fuel; theory and experiment for efficient solar water splitting (Reprinted from J. Phys. Chem. B, vol 104, pg 8920-8924, 2000)

      INTERNATIONAL JOURNAL OF HYDROGEN ENERGY
    16. Fussstetter, H; Richter, H; Umeno, M
      Sub-quarter-micron silicon issues in the 200/300 mm conversion era - Proceedings of the E-MRS IUMRS ICEM 2000 Meeting, Symposium L - Preface

      MICROELECTRONIC ENGINEERING
    17. Koyama, T; Umeno, M; Sonoda, K; Komori, J; Mashiko, Y
      Locally delineating of junctions and defects by local cross-section electron-beam-induced-current technique

      MICROELECTRONICS RELIABILITY
    18. Chikaura, Y; Iida, S; Kawado, S; Mizuno, K; Kimura, S; Matsui, J; Umeno, M; Ozaki, T; Shimura, T; Suzuki, Y; Izumi, K; Kawasaki, K; Kajiwara, K; Ishikawa, T
      Construction of topography stations at SPring-8 and first observations

      JOURNAL OF PHYSICS D-APPLIED PHYSICS
    19. Kazi, ZI; Egawa, T; Umeno, M; Jimbo, T
      Growth of InxGa1-xAs quantum dots by metal-organic chemical vapor deposition on Si substrates and in GaAs-based lasers

      JOURNAL OF APPLIED PHYSICS
    20. Sharda, T; Umeno, M; Soga, T; Jimbo, T
      Strong adhesion in nanocrystalline diamond films on silicon substrates

      JOURNAL OF APPLIED PHYSICS
    21. Shiota, T; Umeno, M; Dohkuni, K; Tagawa, M; Ohmae, N
      Direct observation of the field-stimulated exoemission sites at tungsten surfaces using field ion microscopy

      JOURNAL OF APPLIED PHYSICS
    22. Saravanan, S; Hayashi, Y; Soga, T; Jimbo, T; Umeno, M; Sato, N; Yonehara, T
      Growth and characterization of GaAs epitaxial layers on Si/porous Si/Si substrate by chemical beam epitaxy

      JOURNAL OF APPLIED PHYSICS
    23. Jiang, H; Zhao, GY; Ishikawa, H; Egawa, T; Jimbo, T; Umeno, M
      Determination of exciton transition energy and bowing parameter of AlGaN alloys in AlGaN/GaN heterostructure by means of reflectance measurement

      JOURNAL OF APPLIED PHYSICS
    24. Hayashi, Y; Yu, G; Rahman, MM; Krishna, KM; Soga, T; Jimbo, T; Umeno, M
      Spectroscopic properties of nitrogen doped hydrogenated amorphous carbon films grown by radio frequency plasma-enhanced chemical vapor deposition

      JOURNAL OF APPLIED PHYSICS
    25. Arulkumaran, S; Egawa, T; Ishikawa, H; Umeno, M; Jimbo, T
      Effects of annealing on Ti, Pd, and Ni/n-A1(0).Ga-11(0).N-89 Schottky diodes

      IEEE TRANSACTIONS ON ELECTRON DEVICES
    26. Egawa, T; Zhao, GY; Ishikawa, H; Umeno, M; Jimbo, T
      Characterizations of recessed gate AlGaN/GaN HEMTs on sapphire

      IEEE TRANSACTIONS ON ELECTRON DEVICES
    27. Zhang, BJ; Egawa, T; Zhao, GY; Ishikawa, H; Umeno, M; Jimbo, T
      Schottky diodes of Ni/Au on n-GaN grown on sapphire and SiC substrates

      APPLIED PHYSICS LETTERS
    28. Krishna, KM; Ebisu, H; Hagimoto, K; Hayashi, Y; Soga, T; Jimbo, T; Umeno, M
      Low density of defect states in hydrogenated amorphous carbon thin films grown by plasma-enhanced chemical vapor deposition

      APPLIED PHYSICS LETTERS
    29. Hayashi, Y; Yu, G; Rahman, MM; Krishna, KM; Soga, T; Jimbo, T; Umeno, M
      Determination of optical properties of nitrogen-doped hydrogenated amorphous carbon films by spectroscopic ellipsometry

      APPLIED PHYSICS LETTERS
    30. Wang, G; Ogawa, T; Soga, T; Jimbo, T; Umeno, M
      Passivation of dislocations in GaAs grown on Si substrates by phosphine (PH3) plasma exposure

      APPLIED PHYSICS LETTERS
    31. Wang, G; Ogawa, T; Murase, K; Hori, K; Soga, T; Zhang, BJ; Zhao, GY; Ishikawa, H; Egawa, T; Jimbo, T; Umeno, M
      Passivation of bulk and surface defects in GaAs grown on Si substrate by radio frequency phosphine/hydrogen plasma exposure

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
    32. Kazi, ZI; Thilakan, P; Egawa, T; Umeno, M; Jimbo, T
      Realization of GaAs/AlGaAs lasers on Si substrates using epitaxial lateralovergrowth by metalorganic chemical vapor deposition

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
    33. Koyama, T; Umeno, M; Komori, J; Mashiko, Y
      Evaluation of silicide morphology by near-infrared-laser optical-beam-induced-current technique

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
    34. Tagawa, M; Yokota, K; Ohmae, N; Kinoshita, H; Umeno, M
      Oxidation properties of hydrogen-terminated Si(001) surfaces following useof a hyperthermal broad atomic oxygen beam at low temperatures

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
    35. Yoshioka, Y; Ikuta, T; Taji, T; Mizobata, K; Shimura, T; Umeno, M
      Monitoring of Si molecular-beam epitaxial growth by an ellipsometric method

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
    36. Jiang, H; Nakata, N; Zhao, GY; Ishikawa, H; Shao, CL; Egawa, T; Jimbo, T; Umeno, M
      Back-illuminated GaN metal-semiconductor-metal UV photodetector with high internal gain

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS
    37. Yu, GL; Watanabe, J; Izumi, K; Nakashima, K; Jimbo, T; Umeno, M
      Mechanical property characterization of boron-doped silicon Berkovich-typeindenter

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS
    38. Wang, G; Akahori, K; Soga, T; Jimbo, T; Umeno, M
      Investigation of electrical and optical properties of phosphine/hydrogen-plasma-exposed Ino(0.49)Ga(0.51)P grown on Si substrate

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS
    39. Yu, GL; Ebisu, H; Rahman, MU; Soga, T; Jimbo, T; Umeno, M
      Direct bonding of epitaxial GaAs film on Si substrate with improved optical properties

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS
    40. Ishikawa, H; Nakada, N; Morn, M; Zhao, GY; Egawa, T; Jimbo, T; Umeno, M
      Suppression of GaInN/GaN multi-quantum-well decomposition during growth oflight-emitting-diode structure

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS
    41. Licht, S; Wang, B; Mukerji, S; Soga, T; Umeno, M; Tributsch, H
      Efficient solar water splitting, exemplified by RuO2-catalyzed AlGaAs/Si photoelectrolysis

      JOURNAL OF PHYSICAL CHEMISTRY B
    42. Wang, B; Licht, S; Soga, T; Umeno, M
      Stable cycling behavior of the light invariant AlGaAs/Si/metal hydride solar cell

      SOLAR ENERGY MATERIALS AND SOLAR CELLS
    43. Sharda, T; Soga, T; Jimbo, T; Umeno, M
      Biased enhanced growth of nanocrystalline diamond films by microwave plasma chemical vapor deposition

      DIAMOND AND RELATED MATERIALS
    44. Saravanan, S; Adachi, M; Satoh, N; Soga, T; Jimbo, T; Umeno, M
      Stress reduction and structural duality improvement due to In doping in GaAs/Si

      MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY
    45. Ishikawa, H; Nakada, N; Nakaji, M; Zhao, GY; Egawa, T; Jimbo, T; Umeno, M
      Investigations on strained AlGaN/GaN/sapphire and GaInN multi-quantum-wellsurface LEDs using AlGaN/GaN Bragg reflectors

      IEICE TRANSACTIONS ON ELECTRONICS
    46. Soga, T; Jimbo, T; Krishna, KM; Umeno, M
      Amorphous carbon thin films for optoelectric device application

      INTERNATIONAL JOURNAL OF MODERN PHYSICS B
    47. Wang, G; Ogawa, T; Soga, T; Egawa, T; Jimbo, T; Umeno, M
      Hydrogenation of GaAs-on-Si Schottky diodes by PH3-added H-2 plasma

      APPLIED SURFACE SCIENCE
    48. Arokiaraj, J; Soga, T; Jimbo, T; Umeno, M
      SeS2 assisted bonding of GaAs to Si - A new method for wafer bonding

      APPLIED SURFACE SCIENCE
    49. Kazi, ZI; Egawa, T; Jimbo, T; Umeno, M
      Self-formed In0.2Ga0.8As quantum dot-like laser grown by metal organic chemical vapor deposition on Si substrate

      APPLIED SURFACE SCIENCE
    50. Nakagawa, H; Kibi, S; Tagawa, M; Umeno, M; Ohmae, N
      Microtribological properties of ultrathin C-60 films grown by molecular beam epitaxy

      WEAR
    51. Mominuzzaman, SM; Soga, T; Jimbo, T; Umeno, M
      Camphoric carbon soot: a new target for deposition of diamond-like carbon films by pulsed laser ablation

      THIN SOLID FILMS
    52. Wang, G; Ogawa, T; Soga, T; Jimbo, T; Umeno, M
      Surface and bulk passivation of defects in GaAs/Si by RF plasma-assisted MOCVD

      JOURNAL OF CRYSTAL GROWTH
    53. Soga, T; Arokiaraj, J; Taguchi, H; Jimbo, T; Umeno, M
      Growth of stress-reduced GaAs on Si substrate by using epitaxial lift-off and MOCVD regrowth

      JOURNAL OF CRYSTAL GROWTH
    54. Imaizumi, M; Adachi, M; Fujii, Y; Hayashi, Y; Soga, T; Jimbo, T; Umeno, M
      Low-temperature growth of GaAs polycrystalline films on glass substrates for space solar cell application

      JOURNAL OF CRYSTAL GROWTH
    55. Saravanan, S; Baskar, K; Soga, T; Jimbo, T; Umeno, M
      Impurity investigation and structural quality determination of GaAs epilayers from mixed solvents (Ga plus Bi)

      JOURNAL OF CRYSTAL GROWTH
    56. Shimura, T; Hosoi, T; Umeno, M
      Characterization of SOI wafers by X-ray CTR scattering

      JOURNAL OF CRYSTAL GROWTH
    57. Saravanan, S; Adachi, M; Satoh, N; Soga, T; Jimbo, T; Umeno, M
      Impurity reduction and crystalline quality improvement due to isovalent doping (In) in GaAs epilayers on Si substrate by chemical beam epitaxy

      JOURNAL OF CRYSTAL GROWTH
    58. Mosaddeq-ur-Rahman, M; Yu, GL; Soga, T; Jimbo, T; Ebisu, H; Umeno, M
      Refractive index and degree of inhomogeneity of nanocrystalline TiO2 thin films: Effects of substrate and annealing temperature

      JOURNAL OF APPLIED PHYSICS
    59. Wang, G; Ogawa, T; Soga, T; Jimbo, T; Umeno, M
      PH3/H-2 plasma passivation of metal-organic chemical vapor deposition grown GaAs on Si

      JOURNAL OF APPLIED PHYSICS
    60. Soga, T; Jimbo, T; Wang, G; Ohtsuka, K; Umeno, M
      Hydrogen plasma passivation of GaAs on Si substrates for solar cell fabrication

      JOURNAL OF APPLIED PHYSICS
    61. Egawa, T; Nakada, N; Ishikawa, H; Umeno, M
      GaN MESFETs on (111) Si substrate grown by MOCVD

      ELECTRONICS LETTERS
    62. Wang, G; Soga, T; Egawa, T; Jimbo, T; Umeno, M
      Enhanced spontaneous emission in hydrogen-plasma-passivated AlGaAs/GaAs vertical-cavity surface-emitting laser structures grown on Si substrate

      ELECTRONICS LETTERS
    63. Mominuzzaman, SM; Krishna, KM; Soga, T; Jimbo, T; Umeno, M
      Raman spectra of ion beam sputtered amorphous carbon thin films deposited from camphoric carbon

      CARBON
    64. Sharda, T; Umeno, M; Soga, T; Jimbo, T
      Growth of nanocrystalline diamond films by biased enhanced microwave plasma chemical vapor deposition: A different regime of growth

      APPLIED PHYSICS LETTERS
    65. Soga, T; Jimbo, T; Arokiaraj, J; Umeno, M
      Growth of stress-released GaAs on GaAs/Si structure by metalorganic chemical vapor deposition

      APPLIED PHYSICS LETTERS
    66. Zhao, GY; Adachi, M; Ishikawa, H; Egawa, T; Umeno, M; Jimbo, T
      Growth of Si delta-doped GaN by metalorganic chemical-vapor deposition

      APPLIED PHYSICS LETTERS
    67. Krishna, KM; Umeno, M; Nukaya, Y; Soga, T; Jimbo, T
      Photovoltaic and spectral photoresponse characteristics of n-C/p-C solar cell on a p-silicon substrate

      APPLIED PHYSICS LETTERS
    68. Wang, G; Ogawa, T; Umeno, M; Soga, T; Jimbo, T
      Surface and bulk passivation of GaAs solar cell on Si substrate by H-2+PH3plasma

      APPLIED PHYSICS LETTERS
    69. Nakada, N; Nakaji, M; Ishikawa, H; Egawa, T; Umeno, M; Jimbo, T
      Improved characteristics of InGaN multiple-quantum-well light-emitting diode by GaN/AlGaN distributed Bragg reflector grown on sapphire

      APPLIED PHYSICS LETTERS
    70. Egawa, T; Ishikawa, H; Umeno, M; Jimbo, T
      Recessed gate AlGaN/GaN modulation-doped field-effect transistors on sapphire

      APPLIED PHYSICS LETTERS
    71. Kazi, ZI; Egawa, T; Jimbo, T; Umeno, M
      First room-temperature continuous-wave operation of self-formed InGaAs quantum dot-like laser on Si substrate grown by metalorganic chemical vapor deposition

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
    72. Hayashi, Y; Hagimoto, K; Ebisu, H; Kalaga, MK; Soga, T; Umeno, M; Jimbo, T
      Effect of radio frequency power on the properties of hydrogenated amorphous carbon films grown by radio frequency plasma-enhanced chemical vapor deposition

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
    73. Zhao, GY; Ishikawa, H; Egawa, T; Jimbo, T; Umeno, M
      High-mobility AlGaN/GaN heterostructures grown on sapphire by metal-organic chemical vapor deposition

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
    74. Arokiaraj, J; Okui, H; Taguchi, H; Soga, T; Jimbo, T; Umeno, M
      Electrical characteristics of GaAs bonded to Si using SeS2 technique

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS
    75. Adachi, M; Fujii, Y; Egawa, T; Jimbo, T; Umeno, M
      Low temperature growth of GaAs on Si substrate by chemical beam epitaxy

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS
    76. Arulkumaran, S; Egawa, T; Zhao, GY; Ishikawa, H; Jimbo, T; Umeno, M
      Electrical characteristics of Schottky contacts on GaN and Al0.11Ga0.89N

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS
    77. Shiota, T; Kibi, S; Yamamoto, R; Tagawa, M; Ohmae, N; Umeno, M
      Effect of low-energy ion bombardment upon field-stimulated exoelectron emission from tungsten surfaces

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS
    78. Kazi, ZI; Egawa, T; Jimbo, T; Umeno, M
      Gain coefficient, quantum efficiency, transparency current density, and internal loss of the AlGaAs-GaAs-based lasers on Si substrate

      IEEE PHOTONICS TECHNOLOGY LETTERS
    79. Hayashi, Y; Soga, T; Umeno, M; Jimbo, T
      Analysis of hole transport in cubic phase of p-type GaN by relaxation timeapproximation

      PHYSICA B
    80. Shingu, H; Sumi, T; Furuhashi, H; Uchida, Y; Uchida, H; Umeno, M
      Computer controlled precise positioning for electromagnetic linear motor with correction of periodic error

      INTERNATIONAL JOURNAL OF THE JAPAN SOCIETY FOR PRECISION ENGINEERING
    81. Baba, Y; Kinoshita, H; Tagawa, M; Umeno, M; Ohmae, N
      Water adsorption on the LIGA Ni film and its effects on friction

      JOURNAL OF JAPANESE SOCIETY OF TRIBOLOGISTS
    82. Baba, Y; Nakaji, H; Tagawa, M; Umeno, M; Ohmae, N
      Microtribological aspects of the adsorbed water on the LIGA Ni film

      JOURNAL OF JAPANESE SOCIETY OF TRIBOLOGISTS
    83. Tagawa, M; Suetomi, T; Kinoshita, H; Umeno, M; Ohmae, N
      Surface reaction of a low-flux atomic oxygen beam with a spin-coated polyimide film: Synergetic effect of atomic oxygen and ultraviolet exposures

      TRANSACTIONS OF THE JAPAN SOCIETY FOR AERONAUTICAL AND SPACE SCIENCES
    84. Egawa, T; Ishikawa, H; Jimbo, T; Umeno, M
      Heteroepitaxial growth of III-V compound semiconductors for optoelectronicdevices

      BULLETIN OF MATERIALS SCIENCE
    85. Shiota, T; Morita, M; Umeno, M; Tagawa, M; Ohmae, N; Shima, N
      First-principles calculational study of the exoelectron emission of oxygen-adsorbed aluminum surfaces

      PHYSICAL REVIEW B-CONDENSED MATTER
    86. Kinoshita, H; Umeno, M; Tagawa, M; Ohmae, N
      Hyperthermal atomic oxygen beam-induced etching of HOPG (0001) studied by X-ray photoelectron spectroscopy and scanning tunneling microscopy

      SURFACE SCIENCE
    87. Ishikawa, H; Zhao, GY; Nakada, N; Egawa, T; Soga, T; Jimbo, T; Umeno, M
      High-quality GaN on Si substrate using AlGaN/AlN intermediate layer

      PHYSICA STATUS SOLIDI A-APPLIED RESEARCH
    88. Rahman, MM; Krishna, KM; Soga, T; Jimbo, T; Umeno, M
      Optical properties and X-ray photoelectron spectroscopic study of pure andPb-doped TiO2 thin films

      JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS
    89. Koyama, T; Sonoda, K; Komori, J; Mashiko, Y; Umeno, M
      Detection of defects in metal interconnects by the nonbias-optical beam induced current technique

      JOURNAL OF APPLIED PHYSICS
    90. Krishna, KM; Soga, T; Jimbo, T; Umeno, M
      A phosphorus doped (n-type) carbon boron doped (p-type) silicon photovoltaic solar cell from a natural source

      CARBON
    91. Arokiaraj, J; Soga, T; Jimbo, T; Umeno, M
      High-quality GaAs on Si substrate by the epitaxial lift-off technique using SeS2

      APPLIED PHYSICS LETTERS
    92. Licht, S; Wang, B; Soga, T; Umeno, M
      Light invariant, efficient, multiple band gap AlGaAs/Si/metal hydride solar cell

      APPLIED PHYSICS LETTERS
    93. Katayama, T; Yamamoto, H; Ikeno, M; Mashiko, Y; Kawazu, S; Umeno, M
      Accurate thickness determination of both thin SiO2 on Si and thin Si on SiO2 by angle-resolved X-ray photoelectron spectroscopy

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
    94. Wang, G; Ohtsuka, K; Soga, T; Jimbo, T; Umeno, M
      Hydrogen plasma passivation and improvement of the photovoltaic propertiesof a GaAs solar cell grown on Si substrate

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
    95. Egawa, T; Nakamura, K; Ishikawa, H; Jimbo, T; Umeno, M
      Characteristics of a GaN metal semiconductor field-effect transistor grownon a sapphire substrate by metalorganic chemical vapor deposition

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
    96. Katayama, T; Yamamoto, H; Mashiko, Y; Koyama, H; Kawazu, S; Umeno, M
      Kikuchi-band analysis of X-ray photoelectron diffraction fine structure ofSi(100) by precise angle-resolved X-ray photoelectron spectroscopy

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
    97. Hayashi, Y; Watanabe, K; Jimbo, T; Umeno, M
      Theoretical studies on hole transport and the effective hall factor in cubic phase of p-type GaN

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
    98. Mominuzzaman, SM; Krishna, KM; Soga, T; Jimbo, T; Umeno, M
      Optical absorption and electrical conductivity of amorphous carbon thin films from camphor: A natural source

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
    99. Kazi, ZI; Egawa, T; Jimbo, T; Umeno, M
      AlGaAs/GaAs laser diodes with GaAs islands active region on a Si substratewith higher characteristic temperature

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
    100. Arokiaraj, J; Soga, T; Jimbo, T; Umeno, M
      Surface and bulk passivation effect of GaAs grown on Si substrates by SeS2treatment

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS


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Documento generato il 04/08/20 alle ore 02:54:13