Catalogo Articoli (Spogli Riviste)

HELP
ATTENZIONE: attualmente gli articoli Current Contents (fonte ISI) a partire dall'anno 2002 sono consultabili sulla Risorsa On-Line

Le informazioni sugli articoli di fonte ISI sono coperte da copyright

La ricerca find articoli where authors phrase all words ' Tuck, B' sort by level,fasc_key/DESCEND, pagina_ini_num/ASCEND ha restituito 19 riferimenti
Selezionare un intervallo

Per ulteriori informazioni selezionare i riferimenti di interesse.

    1. O'Brien, P; Thesing, A; Tuck, B; Capie, A
      Perceptions of change, advantage and quality of life for people with intellectual disability who left a long stay institution to live in the community

      JOURNAL OF INTELLECTUAL & DEVELOPMENTAL DISABILITY
    2. Smith, WR; King, JR; Tuck, B
      Mathematical modelling of electrical-optical effects in semiconductor laser operation

      SIAM JOURNAL ON APPLIED MATHEMATICS
    3. Tuck, B; Shepherd, FR; Kelly, G; Margittai, A
      Interaction of p-type dopants during diffusion in InP

      SEMICONDUCTOR SCIENCE AND TECHNOLOGY
    4. Tuck, B
      Diffusion of accepters in n-type and semi-insulating InP

      JOURNAL OF CRYSTAL GROWTH
    5. Smith, WR; King, JR; Tuck, B; Orton, JW
      The single-mode rate equations for semiconductor lasers with thermal effects

      IMA JOURNAL OF APPLIED MATHEMATICS
    6. O'Brien, P; Tuck, B; Cummins, R; Elkins, J
      Visual behaviour and dyadic interaction between people with intellectual disability and people who are nondisabled

      JOURNAL OF INTELLECTUAL DISABILITY RESEARCH
    7. KRIBES Y; HARRISON I; TUCK B; CHENG TS; FOXON CT
      ELECTRICAL-PROPERTIES OF N-GAN N(+)-GAAS INTERFACES/

      Journal of crystal growth
    8. SMITH WR; KING JR; TUCK B
      MATHEMATICAL-MODELING OF THERMAL EFFECTS IN SEMICONDUCTOR-LASER OPERATION

      IEE proceedings. Optoelectronics
    9. KRIBES Y; HARRISON I; TUCK B; CHENG TS; FOXON CT
      INVESTIGATION OF AU SCHOTTKY CONTACTS ON GAN GROWN BY MOLECULAR-BEAM EPITAXY

      Semiconductor science and technology
    10. KRIBES Y; HARRISON I; TUCK B; KIM KS; CHENG TS; FOXON CT
      INVESTIGATION OF ALUMINUM OHMIC CONTACTS TO N-TYPE GAN GROWN BY MOLECULAR-BEAM EPITAXY

      Semiconductor science and technology
    11. TUCK B
      DOCUMENT DELIVERY IN AN ELECTRONIC WORLD

      Interlending & document supply
    12. FISHER RA; TUCK B
      ISSUES IN ELECTRONIC DOCUMENT DELIVERY

      Interlending & document supply
    13. MANTHEI R; GILMORE A; TUCK B; ADAIR V
      TEACHER STRESS IN INTERMEDIATE SCHOOLS

      Educational research
    14. KING JR; SHARP TE; TUCK B; ROGERS TG
      MATHEMATICAL-MODELING OF THE INTERSTITIALCY DIFFUSION MECHANISM

      Proceedings - Royal Society. Mathematical and physical sciences
    15. BABAALI N; HARRISON I; TUCK B
      ARSENIC PRESSURE-DEPENDENCE OF GROUP-III ATOM INTERDIFFUSION IN GAAS-ALAS SINGLE-WELL HETEROSTRUCTURES

      Journal of materials science. Materials in electronics
    16. KING JR; SHARP TE; TUCK B; ROGERS TG
      MATHEMATICAL-MODELING OF THE DIFFUSION-INDUCED DISORDERING OF A SEMICONDUCTOR SUPERLATTICE

      Quarterly Journal of Mechanics and Applied Mathematics
    17. AITSADI R; LOWERY AJ; TUCK B
      2-DIMENSIONAL TEMPERATURE MODELING OF DH LASER-DIODES USING THE TRANSMISSION-LINE MODELING (TLM) METHOD

      IEE proceedings. A, Science, measurement and technology
    18. TUCK B; ROLFE J; ADAIR V
      ADOLESCENTS ATTITUDE TOWARD GENDER-ROLES WITHIN WORK AND ITS RELATIONSHIP TO GENDER, PERSONALITY TYPE, AND PARENTAL OCCUPATION

      Sex roles
    19. HO HP; HARRISON I; BABAALI N; TUCK B; HENINI M
      THE EFFECT OF ARSENIC PRESSURE ON THE DIFFUSION-INDUCED DISORDERING OF TIN IN ALAS GAAS SUPERLATTICES

      Journal of materials science. Materials in electronics


ASDD Area Sistemi Dipartimentali e Documentali, Università di Bologna, Catalogo delle riviste ed altri periodici
Documento generato il 04/08/20 alle ore 11:09:20