Catalogo Articoli (Spogli Riviste)

HELP
ATTENZIONE: attualmente gli articoli Current Contents (fonte ISI) a partire dall'anno 2002 sono consultabili sulla Risorsa On-Line

Le informazioni sugli articoli di fonte ISI sono coperte da copyright

La ricerca find articoli where authors phrase all words ' Thewalt, MLW' sort by level,fasc_key/DESCEND, pagina_ini_num/ASCEND ha restituito 56 riferimenti
Selezionare un intervallo

Per ulteriori informazioni selezionare i riferimenti di interesse.

    1. Pitts, OJ; Watkins, SP; Wang, CX; Stotz, JAH; Thewalt, MLW
      In-situ monitoring, structural, and optical properties of ultrathin GaSb/GaAs quantum wells grown by OMVPE

      JOURNAL OF ELECTRONIC MATERIALS
    2. Wiersma, R; Stotz, JAH; Pitts, OJ; Wang, CX; Thewalt, MLW; Watkins, SP
      P-type carbon doping of GaSb

      JOURNAL OF ELECTRONIC MATERIALS
    3. Karaiskaj, D; Thewalt, MLW; Ruf, T; Cardona, M; Pohl, HJ; Deviatych, GG; Sennikov, PG; Riemann, H
      Photoluminescence of isotopically purified silicon: How sharp are bound exciton transitions?

      PHYSICAL REVIEW LETTERS
    4. Broussell, I; Karasyuk, VA; Thewalt, MLW
      Photoluminescence method for detecting trace levels of iron in ultrapure silicon

      APPLIED PHYSICS LETTERS
    5. Harrison, DA; Stotz, JAH; Karasyuk, VA; Watkins, SP; Thewalt, MLW; Beckett, DJS; Thorpe, AJS
      Magnetophotoluminescence of D- singlet and triplet states in GaAs

      PHYSICAL REVIEW B-CONDENSED MATTER
    6. Karasyuk, VA; Thewalt, MLW; Springthorpe, AJ
      Strain effects on bound exciton luminescence in epitaxial GaAs studied using a wafer bending technique

      PHYSICA STATUS SOLIDI B-BASIC RESEARCH
    7. HARRISON DA; WATKINS SP; THEWALT MLW; BECKETT DJS; SPRINGTHORPE AJ
      NEW PHOTOLUMINESCENCE TRANSITION IN GAAS INVOLVING D- STATES

      Physical review letters
    8. HU J; HARRISON DA; KARASYUK VA; WATKINS SP; THEWALT MLW; BASSIGNANA IC; BECKETT DJS; HILLIER GC; SPRINGTHORPE AJ
      LATTICE-PARAMETER VARIATION IN DOPED GAAS SUBSTRATES DETERMINED USINGHIGH-RESOLUTION PHOTOLUMINESCENCE SPECTROSCOPY

      Journal of applied physics
    9. HARRISON DA; HU J; WATKINS SP; THEWALT MLW; BECKETT DJS; THORPE AJS
      HIGH-RESOLUTION SPECTROSCOPY OF FREESTANDING GAAS FILMS PREPARED BY EPITAXIAL LIFTOFF

      Journal of applied physics
    10. MATINE N; DVORAK MW; BOLOGNESI CR; XU X; HU J; WATKINS SP; THEWALT MLW
      NEARLY IDEAL INP GAASSB/INP DOUBLE-HETEROJUNCTION BIPOLAR-TRANSISTORSWITH BALLISTICALLY LAUNCHED COLLECTOR ELECTRONS/

      Electronics Letters
    11. HU J; XU XG; STOTZ JAH; WATKINS SP; CURZON AE; THEWALT MLW; MATINE N; BOLOGNESI CR
      TYPE-II PHOTOLUMINESCENCE AND CONDUCTION-BAND OFFSETS OF GAASSB INGAAS AND GAASSB/INP HETEROSTRUCTURES GROWN BY METALORGANIC VAPOR-PHASE EPITAXY/

      Applied physics letters
    12. KARASYUK VA; THEWALT MLW; AN S; LIGHTOWLERS EC
      FOURIER-TRANSFORM PHOTOLUMINESCENCE SPECTROSCOPY OF EXCITONS BOUND TOGROUP-III ACCEPTORS IN SILICON - UNIAXIAL-STRESS

      Physical review. B, Condensed matter
    13. THEWALT MLW; HARRISON DA; REINHART CF; WOLK JA; LAFONTAINE H
      TYPE-II BAND ALIGNMENT IN SI1-XGEX SI(001) QUANTUM-WELLS - THE UBIQUITOUS TYPE-I LUMINESCENCE RESULTS FROM BAND BENDING/

      Physical review letters
    14. KNIGHT DG; KELLY G; HU J; WATKINS SP; THEWALT MLW
      CHARACTERIZATION OF INTERFACIAL DOPANT LAYER FOR HIGH-PURITY INP GROWN BY MOCVD

      Journal of crystal growth
    15. HARRISON DA; ARES R; WATKINS SP; THEWALT MLW; BOLOGNESI CR; BECKETT DJS; SPRINGTHORPE AJ
      LARGE PHOTOLUMINESCENCE ENHANCEMENTS FROM EPITAXIAL GAAS PASSIVATED BY POSTGROWTH PHOSPHIDIZATION

      Applied physics letters
    16. HOROYSKI PJ; THEWALT MLW; ANTHONY TR
      RAMAN-SCATTERING STUDY OF ISOTOPICALLY ENGINEERED CRYSTALLINE C-60

      Physical review. B, Condensed matter
    17. KARASYUK VA; THEWALT MLW; AN S; LIGHTOWLERS EC; KAMINSKII AS
      FOURIER-TRANSFORM PHOTOLUMINESCENCE SPECTROSCOPY OF EXCITONS BOUND TOGROUP-III ACCEPTORS IN SILICON - ZEEMAN-EFFECT

      Physical review. B, Condensed matter
    18. HOROYSKI PJ; THEWALT MLW
      POLARIZATION DEPENDENCE OF THE RAMAN-ACTIVE LATTICE MODES OF CRYSTALLINE C-60

      Physical review. B, Condensed matter
    19. KAMINSKII AS; LAVROV EV; KARASYUK VA; THEWALT MLW
      PHOTOLUMINESCENCE OF EXCITONS BOUND TO THE RADIATION-DAMAGE DEFECTS B-41 (1.1509 EV) IN SILICON

      Solid state communications
    20. LIU CW; STAMOUR A; STURM JC; LACROIX YRJ; THEWALT MLW; MAGEE CW; EAGLESHAM D
      GROWTH AND PHOTOLUMINESCENCE OF HIGH-QUALITY SIGEC RANDOM ALLOYS ON SILICON SUBSTRATES

      Journal of applied physics
    21. LACROIX Y; TRAN CA; WATKINS SP; THEWALT MLW
      LOW-TEMPERATURE PHOTOLUMINESCENCE OF EPITAXIAL INAS

      Journal of applied physics
    22. ANTHONY TR; BRADLEY JC; HOROYSKI PJ; THEWALT MLW
      GRAPHITE ROD PRECURSORS FOR ISOTOPICALLY PURE FULLERENES AND DIAMOND

      Carbon
    23. LACROIX Y; TRAN CA; WATKINS SP; THEWALT MLW
      OPTICAL-IDENTIFICATION OF THE EXCITON-POLARITON IN EPITAXIAL INAS

      Canadian journal of physics
    24. STAMOUR A; LIU CW; STURM JC; LACROIX Y; THEWALT MLW
      DEFECT-FREE BAND-EDGE PHOTOLUMINESCENCE AND BAND-GAP MEASUREMENT OF PSEUDOMORPHIC SI1-X-YGEXCY ALLOY LAYERS ON SI (100) (VOL 67, PG 3915, 1995)

      Applied physics letters
    25. TOBIN SP; TOWER JP; NORTON PW; CHANDLERHOROWITZ D; AMIRTHARAJ PM; LOPES VC; DUNCAN WM; SYLLAIOS AJ; ARD CK; GILES NC; LEE J; BALASUBRAMANIAN R; BOLLONG AB; STEINER TW; THEWALT MLW; BOWEN DK; TANNER BK
      A COMPARISON OF TECHNIQUES FOR NONDESTRUCTIVE COMPOSITION MEASUREMENTS IN CDZNTE SUBSTRATES

      Journal of electronic materials
    26. WATKINS SP; TRAN CA; SOERENSEN G; CHEUNG HD; ARES RA; LACROIX Y; THEWALT MLW
      CHARACTERIZATION OF VERY HIGH-PURITY INAS GROWN USING TRIMETHYLINDIUMAND TERTIARYBUTYLARSINE

      Journal of electronic materials
    27. HOMES CC; HOROYSKI PJ; THEWALT MLW; CLAYMAN BP; ANTHONY TR
      EFFECT OF ISOTOPIC DISORDER ON THE F-U MODES IN CRYSTALLINE C-60

      Physical review. B, Condensed matter
    28. HOROYSKI PJ; THEWALT MLW; ANTHONY TR
      DISORDER, IMPURITY, AND ISOTOPE EFFECTS IN THE RAMAN-ACTIVE LIBRON SPECTRUM OF CRYSTALLINE C-60

      Physical review. B, Condensed matter
    29. KAMINSKII AS; LAVROV EV; KARASYUK VA; THEWALT MLW
      PHOTOLUMINESCENCE OF EXCITONS BOUND TO THE ISOELECTRONIC HYDROGEN-RELATED DEFECTS B-80(1.1470 EV) AND B-19(1)(1.1431 EV) IN SILICON

      Physical review. B, Condensed matter
    30. HOROYSKI PJ; WOLK JA; THEWALT MLW
      THE PRESSURE-DEPENDENCE OF RAMAN-ACTIVE LIBRON MODES IN CRYSTALLINE C-60

      Solid state communications
    31. KARASYUK VA; AN S; THEWALT MLW; LIGHTOWLERS EC; KAMINSKII AS
      SPLITTING OF THE GROUND-STATE OF SHALLOW ACCEPTORS IN SILICON

      Solid state communications
    32. THEWALT MLW
      NANOSECOND-GATED DETECTION OF ROOM-TEMPERATURE FLUORESCENCE OF C-60 IN SOLUTION - COMMENT

      Physical review letters
    33. WOLK JA; HOROYSKI PJ; THEWALT MLW
      PRESSURED-INDUCED STRUCTURAL METASTABILITY IN CRYSTALLINE C-60

      Physical review letters
    34. HOROYSKI PJ; THEWALT MLW; ANTHONY TR
      RAMAN FINE-STRUCTURE IN CRYSTALLINE C-60 - THE EFFECTS OF MEROHEDRAL DISORDER, ISOTOPIC-SUBSTITUTION, AND CRYSTAL-FIELD

      Physical review letters
    35. PERCIVAL PW; ADDISONJONES B; BRODOVITCH JC; JI F; HOROYSKI PJ; THEWALT MLW; ANTHONY TR
      C-13 HYPERFINE COUPLING-CONSTANTS IN MUC(60)

      Chemical physics letters
    36. STAMOUR A; LIU CW; STURM JC; LACROIX Y; THEWALT MLW
      DEFECT-FREE BAND-EDGE PHOTOLUMINESCENCE AND BAND-GAP MEASUREMENT OF PSEUDOMORPHIC SI1-X-YGEXCY ALLOY LAYERS ON SI(100)

      Applied physics letters
    37. LACROIX Y; WATKINS SP; TRAN CA; THEWALT MLW
      SHARP EXCITONIC PHOTOLUMINESCENCE FROM EPITAXIAL INAS

      Applied physics letters
    38. WOLK JA; STEINER TW; KARASYUK VA; THEWALT MLW
      FINE-STRUCTURE OF A BOUND MULTIEXCITON COMPLEX IN CDTE

      Physical review. B, Condensed matter
    39. KAMINSKII AS; LAVROV EV; KARASYUK VA; THEWALT MLW
      PHOTOLUMINESCENCE OF EXCITONS BOUND TO THE ISOELECTRONIC HYDROGEN-RELATED DEFECTS B-71(1) (1.1377-EV) IN SILICON

      Physical review. B, Condensed matter
    40. KARASYUK VA; BECKETT DGS; NISSEN MK; VILLEMAIRE A; STEINER TW; THEWALT MLW
      FOURIER-TRANSFORM MAGNETOPHOTOLUMINESCENCE SPECTROSCOPY OF DONOR-BOUND EXCITONS IN GAAS

      Physical review. B, Condensed matter
    41. HOMES CC; HOROYSKI PJ; THEWALT MLW; CLAYMAN BP
      ANOMALOUS SPLITTING OF THE F(1U)(-]3F(U)) VIBRATIONS IN SINGLE-CRYSTAL C-60 BELOW THE ORIENTATIONAL-ORDERING TRANSITION

      Physical review. B, Condensed matter
    42. STEINER TW; LENCHYSHYN LC; THEWALT MLW; NOEL JP; ROWELL NL; HOUGHTON DC
      VISIBLE PHOTOLUMINESCENCE FROM BIEXCITONS IN SI1-XGEX QUANTUM-WELLS

      Solid state communications
    43. KARASYUK VA; THEWALT MLW; AN S; LIGHTOWLERS EC
      INTRINSIC SPLITTING OF THE ACCEPTOR GROUND-STATE IN SILICON

      Physical review letters
    44. RAO TS; LACELLE C; BENZAQUEN R; ROLFE SJ; CHARBONNEAU S; BERGER PD; ROTH AP; STEINER T; THEWALT MLW
      ELECTRICAL, OPTICAL-PROPERTIES, AND SURFACE-MORPHOLOGY OF HIGH-PURITYINP GROWN BY CHEMICAL BEAM EPITAXY

      Journal of applied physics
    45. HOROYSKI PJ; THEWALT MLW
      C-70 VIBRATIONAL FREQUENCIES OBTAINED FROM SINGLET OXYGEN PHOTOLUMINESCENCE

      Chemical physics letters
    46. HOROYSKI PJ; THEWALT MLW
      FOURIER-TRANSFORM RAMAN AND BRILLOUIN SPECTROSCOPY USING ATOMIC VAPORFILTERS

      Applied spectroscopy
    47. STAMOUR A; STURM JC; LACROIX Y; THEWALT MLW
      ENHANCEMENT OF HIGH-TEMPERATURE PHOTOLUMINESCENCE IN STRAINED SI1-XGEX SI HETEROSTRUCTURES BY SURFACE PASSIVATION/

      Applied physics letters
    48. LIU CW; STURM JC; LACROIX YRJ; THEWALT MLW; PEROVIC DD
      GROWTH AND BAND-GAP OF STRAINED (110) SI1-XGEX LAYERS ON SILICON SUBSTRATES BY CHEMICAL-VAPOR-DEPOSITION

      Applied physics letters
    49. STURM JC; STAMOUR A; LACROIX Y; THEWALT MLW
      DEEP PHOTOLUMINESCENCE IN SI SI1-XGEX/SI QUANTUM-WELLS CREATED BY ION-IMPLANTATION AND ANNEALING/

      Applied physics letters
    50. STURM JC; STAMOUR A; MI Q; LENCHYSHYN LC; THEWALT MLW
      HIGH-TEMPERATURE (77-300-K) PHOTOLUMINESCENCE AND ELECTROLUMINESCENCEIN SI SI1-XGEX HETEROSTRUCTURES/

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
    51. STURM JC; XIAO X; MI Q; LIU CW; STAMOUR A; MATUTINOVICKRSTELJ Z; LENCHYSHYN LC; THEWALT MLW
      PHOTOLUMINESCENCE AND ELECTROLUMINESCENCE PROCESSES IN SI1-XGEX SI HETEROSTRUCTURES GROWN BY CHEMICAL-VAPOR-DEPOSITION/

      Materials science & engineering. B, Solid-state materials for advanced technology
    52. HOROYSKI PJ; THEWALT MLW
      OPTICALLY DETECTED LIBRONS AND PHONONS IN CRYSTALLINE C-60

      Physical review. B, Condensed matter
    53. LENCHYSHYN LC; THEWALT MLW; HOUGHTON DC; NOEL JP; ROWELL NL; STURM JC; XIAO X
      PHOTOLUMINESCENCE MECHANISMS IN THIN SI1-XGEX QUANTUM-WELLS

      Physical review. B, Condensed matter
    54. LENCHYSHYN LC; THEWALT MLW; STURM JC; XIAO X
      PHOTOLUMINESCENCE STUDY OF VERTICAL TRANSPORT IN SI1-XGEX SI HETEROSTRUCTURES/

      Physical review. B, Condensed matter
    55. KARASYUK VA; BRAKE DM; THEWALT MLW
      ULTRAHIGH-RESOLUTION PHOTOLUMINESCENCE STUDIES OF EXCITONS BOUND TO BORON IN SILICON IN MAGNETIC-FIELDS

      Physical review. B, Condensed matter
    56. ROWELL NL; NOEL JP; HOUGHTON DC; WANG A; LENCHYSHYN LC; THEWALT MLW; PEROVIC DD
      EXCITON LUMINESCENCE IN SI1-XGEX SI HETEROSTRUCTURES GROWN BY MOLECULAR-BEAM EPITAXY/

      Journal of applied physics


ASDD Area Sistemi Dipartimentali e Documentali, Università di Bologna, Catalogo delle riviste ed altri periodici
Documento generato il 27/05/20 alle ore 12:36:30