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1. Kuznetsov, AY; Christensen, JS; Monakhov, EV; Lindgren, AC; Radamson, HH; Nylandsted-Larsen, A; Svensson, BG
   Dopant redistribution and formation of electrically active complexes in SiGe
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2. Hermansson, J; Murin, LI; Hallberg, T; Markevich, VP; Lindstrom, JL; Kleverman, M; Svensson, BG
   Complexes of the self-interstitial with oxygen in irradiated silicon: a new assignment of the 936 cm(-1) band
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3. Thungstrom, G; Dubaric, E; Svensson, BG
   Processing of silicon UV-photodetectors
   NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT
   
   G. Thungstrom et al., "Processing of silicon UV-photodetectors", NUCL INST A, 460(1), 2001, pp. 165-184
4. Leveque, P; Christensen, JS; Kuznetsov, AY; Svensson, BG; Larsen, AN
   Influence of boron concentration on the enhanced diffusion observed after irradiation of boron delta-doped silicon at 570 degrees C
   NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS
   
   P. Leveque et al., "Influence of boron concentration on the enhanced diffusion observed after irradiation of boron delta-doped silicon at 570 degrees C", NUCL INST B, 178, 2001, pp. 337-341
5. Leveque, P; Pellegrino, P; Hallen, A; Svensson, BG; Privitera, V
   Hydrogen-related defect centers in float-zone and epitaxial n-type proton implanted silicon
   NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS
   
   P. Leveque et al., "Hydrogen-related defect centers in float-zone and epitaxial n-type proton implanted silicon", NUCL INST B, 174(3), 2001, pp. 297-303
6. Janson, MS; Hallen, A; Linnarsson, MK; Svensson, BG
   Hydrogen diffusion, complex formation, and dissociation in acceptor-doped silicon carbide - art. no. 195202
   PHYSICAL REVIEW B
   
   M.S. Janson et al., "Hydrogen diffusion, complex formation, and dissociation in acceptor-doped silicon carbide - art. no. 195202", PHYS REV B, 6419(19), 2001, pp. 5202
7. Pellegrino, P; Leveque, P; Lalita, J; Hallen, A; Jagadish, C; Svensson, BG
   Annealing kinetics of vacancy-related defects in low-dose MeV self-ion-implanted n-type silicon - art. no. 195211
   PHYSICAL REVIEW B
   
   P. Pellegrino et al., "Annealing kinetics of vacancy-related defects in low-dose MeV self-ion-implanted n-type silicon - art. no. 195211", PHYS REV B, 6419(19), 2001, pp. 5211
8. Monakhov, EV; Kuznetsov, AY; Svensson, BG
   Vacancy-related deep levels in n-type Si1-xGex strained layers - art. no. 245322
   PHYSICAL REVIEW B
   
   E.V. Monakhov et al., "Vacancy-related deep levels in n-type Si1-xGex strained layers - art. no. 245322", PHYS REV B, 6324(24), 2001, pp. 5322
9. Mannino, G; Whelan, S; Schroer, E; Privitera, V; Leveque, P; Svensson, BG; Napolitani, E
   An investigation on the modeling of transient enhanced diffusion of ultralow energy implanted boron in silicon
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   G. Mannino et al., "An investigation on the modeling of transient enhanced diffusion of ultralow energy implanted boron in silicon", J APPL PHYS, 89(10), 2001, pp. 5381-5385
10. Leveque, P; Kuznetsov, AY; Christensen, JS; Svensson, BG; Larsen, AN
    Irradiation enhanced diffusion of boron in delta-doped silicon
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    P. Leveque et al., "Irradiation enhanced diffusion of boron in delta-doped silicon", J APPL PHYS, 89(10), 2001, pp. 5400-5405
11. Linnarsson, MK; Janson, MS; Zimmermann, U; Svensson, BG; Persson, POA; Hultman, L; Wong-Leung, J; Karlsson, S; Schoner, A; Bleichner, H; Olsson, E
    Solubility limit and precipitate formation in Al-doped 4H-SiC epitaxial material
    APPLIED PHYSICS LETTERS
    
    M.K. Linnarsson et al., "Solubility limit and precipitate formation in Al-doped 4H-SiC epitaxial material", APPL PHYS L, 79(13), 2001, pp. 2016-2018
12. Pellegrino, P; Leveque, P; Wong-Leung, J; Jagadish, C; Svensson, BG
    Separation of vacancy and interstitial depth profiles in ion-implanted silicon: Experimental observation
    APPLIED PHYSICS LETTERS
    
    P. Pellegrino et al., "Separation of vacancy and interstitial depth profiles in ion-implanted silicon: Experimental observation", APPL PHYS L, 78(22), 2001, pp. 3442-3444
13. Aberg, D; Hallen, A; Pellegrino, P; Svensson, BG
    Nitrogen deactivation by implantation-induced defects in 4H-SiC epitaxial layers
    APPLIED PHYSICS LETTERS
    
    D. Aberg et al., "Nitrogen deactivation by implantation-induced defects in 4H-SiC epitaxial layers", APPL PHYS L, 78(19), 2001, pp. 2908-2910
14. Kuznetsov, AY; Leveque, P; Hallen, A; Svensson, BG; Larsen, AN
    Self-interstitial migration during ion irradiation of boron delta-doped silicon
    MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
    
    A.Y. Kuznetsov et al., "Self-interstitial migration during ion irradiation of boron delta-doped silicon", MAT SC S PR, 3(4), 2000, pp. 279-283
15. Monakhov, EV; Kuznetsov, AY; Svensson, BG; Larsen, AN
    Thermal donor and antimony energy levels in relaxed Si1-xGex layers
    PHYSICAL REVIEW B
    
    E.V. Monakhov et al., "Thermal donor and antimony energy levels in relaxed Si1-xGex layers", PHYS REV B, 61(3), 2000, pp. 1708-1711
16. Janson, MS; Hallen, A; Linnarsson, MK; Svensson, BG; Nordell, N; Karlsson, S
    Electric-field-assisted migration and accumulation of hydrogen in silicon carbide
    PHYSICAL REVIEW B
    
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17. Schmidt, DC; Barbot, JF; Blanchard, C; Godey, S; Ntsoenzok, E; Svensson, BG
    Proximity gettering of platinum in silicon following implantation with alpha particles at low doses
    MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY
    
    D.C. Schmidt et al., "Proximity gettering of platinum in silicon following implantation with alpha particles at low doses", MAT SCI E B, 71, 2000, pp. 182-185
18. Svensson, BG; Petersson, E
    Swarm site fidelity in the sex role-reversed dance fly Empis borealis
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    B.G. Svensson e E. Petersson, "Swarm site fidelity in the sex role-reversed dance fly Empis borealis", J INSECT B, 13(6), 2000, pp. 785-796
19. Svensson, B; Lagerlof, J; Svensson, BG
    Habitat preferences of nest-seeking bumble bees (Hymenoptera : Apidae) in an agricultural landscape
    AGRICULTURE ECOSYSTEMS & ENVIRONMENT
    
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20. Svensson, BG; Tallmark, B; Petersson, E
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21. Larsen, AN; Goubet, JJ; Mejlholm, P; Christensen, JS; Fanciulli, M; Gunnlaugsson, HP; Weyer, G; Petersen, JW; Resende, A; Kaukonen, M; Jones, R; Oberg, S; Briddon, PR; Svensson, BG; Lindstrom, JL; Dannefaer, S
    Tin-vacancy acceptor levels in electron-irradiated n-type silicon
    PHYSICAL REVIEW B
    
    A.N. Larsen et al., "Tin-vacancy acceptor levels in electron-irradiated n-type silicon", PHYS REV B, 62(7), 2000, pp. 4535-4544
22. Schmidt, DC; Svensson, BG; Seibt, M; Jagadish, C; Davies, G
    Photoluminescence, deep level transient spectroscopy and transmission electron microscopy measurements on MeV self-ion implanted and annealed n-type silicon
    JOURNAL OF APPLIED PHYSICS
    
    D.C. Schmidt et al., "Photoluminescence, deep level transient spectroscopy and transmission electron microscopy measurements on MeV self-ion implanted and annealed n-type silicon", J APPL PHYS, 88(5), 2000, pp. 2309-2317
23. Monakhov, EV; Kuznetsov, AY; Svensson, BG
    Comparative study of divacancy and E-center electronic levels in Si and strained Si0.87Ge0.13 layers
    JOURNAL OF APPLIED PHYSICS
    
    E.V. Monakhov et al., "Comparative study of divacancy and E-center electronic levels in Si and strained Si0.87Ge0.13 layers", J APPL PHYS, 87(9), 2000, pp. 4629-4631
24. Janson, MS; Linnarsson, MK; Hallen, A; Svensson, BG; Nordell, N; Bleichner, H
    Transient enhanced diffusion of implanted boron in 4H-silicon carbide
    APPLIED PHYSICS LETTERS
    
    M.S. Janson et al., "Transient enhanced diffusion of implanted boron in 4H-silicon carbide", APPL PHYS L, 76(11), 2000, pp. 1434-1436
25. Schmidt, DC; Aberg, D; Svensson, BG; Lindstrom, JL; Barbot, JF; Blanchard, C
    The evolution of interstitial-type defects in silicon during platinum diffusion from 400 to 600 degrees C following 2-MeV electron irradiation
    MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY
    
    D.C. Schmidt et al., "The evolution of interstitial-type defects in silicon during platinum diffusion from 400 to 600 degrees C following 2-MeV electron irradiation", MAT SCI E B, 68(2), 1999, pp. 67-71
26. Linnarsson, MK; Janson, MS; Karlsson, S; Schoner, A; Nordell, N; Svensson, BG
    Diffusion of light elements in 4H-and 6H-SiC
    MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY
    
    M.K. Linnarsson et al., "Diffusion of light elements in 4H-and 6H-SiC", MAT SCI E B, 61-2, 1999, pp. 275-280
27. Hallen, A; Henry, A; Pellegrino, E; Svensson, BG; Aberg, D
    Ion implantation induced defects in epitaxial 4H-SiC
    MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY
    
    A. Hallen et al., "Ion implantation induced defects in epitaxial 4H-SiC", MAT SCI E B, 61-2, 1999, pp. 378-381
28. Schmidt, DC; Svensson, BG; Lindstrom, JL; Godey, S; Ntsoenzok, E; Barbot, JF; Blanchard, C
    Enhanced diffusion of platinum in electron-irradiated silicon
    MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY
    
    D.C. Schmidt et al., "Enhanced diffusion of platinum in electron-irradiated silicon", MAT SCI E B, 57(2), 1999, pp. 161-164
29. Lindstrom, JL; Murin, LI; Markevich, VP; Hallberg, T; Svensson, BG
    Vibrational absorption from vacancy-oxygen-related complexes (VO, V2O, VO2) in irradiated silicon
    PHYSICA B
    
    J.L. Lindstrom et al., "Vibrational absorption from vacancy-oxygen-related complexes (VO, V2O, VO2) in irradiated silicon", PHYSICA B, 274, 1999, pp. 291-295
30. Pellegrino, P; Kuznetsov, AY; Svensson, BG
    Impurity-assisted annealing of point defect complexes in ion-implanted silicon
    PHYSICA B
    
    P. Pellegrino et al., "Impurity-assisted annealing of point defect complexes in ion-implanted silicon", PHYSICA B, 274, 1999, pp. 489-492
31. Aberg, D; Hallen, A; Svensson, BG
    Low-dose ion implanted epitaxial 4H-SiC investigated by deep level transient spectroscopy
    PHYSICA B
    
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32. Kuznetsov, AY; Radamson, HH; Svensson, BG; Ni, WX; Hansson, GV; Larsen, AN
    Comparison of strain relaxation in Si/SiGe/Si heterostructures after annealing in oxidizing and inert atmospheres
    PHYSICA SCRIPTA
    
    A.Y. Kuznetsov et al., "Comparison of strain relaxation in Si/SiGe/Si heterostructures after annealing in oxidizing and inert atmospheres", PHYS SCR, T79, 1999, pp. 202-205
33. Schmidt, DC; Svensson, BG; Barbot, JF; Blanchard, C
    Study on the evolution and nature of interstitial-type defects following proton and alpha particle implantation during low-dose proximity gettering of platinum
    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS
    
    D.C. Schmidt et al., "Study on the evolution and nature of interstitial-type defects following proton and alpha particle implantation during low-dose proximity gettering of platinum", NUCL INST B, 155(1-2), 1999, pp. 60-66
34. Kuznetsov, AY; Janson, M; Hallen, A; Svensson, BG; Larsen, AN
    Boron diffusion in Si and SiC during 2.5 MeV proton irradiation at 500-850degrees C
    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS
    
    A.Y. Kuznetsov et al., "Boron diffusion in Si and SiC during 2.5 MeV proton irradiation at 500-850degrees C", NUCL INST B, 148(1-4), 1999, pp. 279-283
35. Pellegrino, P; Keskitalo, N; Hallen, A; Svensson, BG
    Reverse annealing effects in heavy ion implanted silicon
    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS
    
    P. Pellegrino et al., "Reverse annealing effects in heavy ion implanted silicon", NUCL INST B, 148(1-4), 1999, pp. 306-310
36. Schmidt, DC; Svensson, BG; Godey, S; Ntsoenzok, E; Barbot, JF; Blanchard, C
    Residual defects in Cz-silicon after low dose self-implantation and annealing from 400 degrees C to 800 degrees C
    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS
    
    D.C. Schmidt et al., "Residual defects in Cz-silicon after low dose self-implantation and annealing from 400 degrees C to 800 degrees C", NUCL INST B, 147(1-4), 1999, pp. 106-110
37. Schmidt, DC; Svensson, BG; Godey, S; Ntsoenzok, E; Barbot, JF; Blanchard, C
    Low temperature proximity gettering of platinum in proton irradiated silicon via interstitial cluster dissociation
    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS
    
    D.C. Schmidt et al., "Low temperature proximity gettering of platinum in proton irradiated silicon via interstitial cluster dissociation", NUCL INST B, 147(1-4), 1999, pp. 127-131
38. Keskitalo, N; Hallen, A; Pellegrino, P; Svensson, BG
    Anomalous field dependence of deep level emission in proton irradiated silicon
    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS
    
    N. Keskitalo et al., "Anomalous field dependence of deep level emission in proton irradiated silicon", NUCL INST B, 147(1-4), 1999, pp. 427-431
39. Lindner, JKN; Svensson, BG; Hemment, PLF; Atwater, HA
    Ion Implantation into Semiconductors, Oxides and Ceramics - Proceedings ofthe E-MRS 1998 Spring Meeting Symposium J on Ion Implantation into Semiconductors, Oxides and Ceramics, Strasbourg, France, 16-19 June 1998 - Preface
    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS
    
    J.K.N. Lindner et al., "Ion Implantation into Semiconductors, Oxides and Ceramics - Proceedings ofthe E-MRS 1998 Spring Meeting Symposium J on Ion Implantation into Semiconductors, Oxides and Ceramics, Strasbourg, France, 16-19 June 1998 - Preface", NUCL INST B, 147(1-4), 1999, pp. VII-VIII
40. Linnarsson, MK; Svensson, BG
    Cascade mixing in AlxGa1-xAs/GaAs during sputter profiling by noble-gas ions
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41. Kuznetsov, AY; Cardenas, J; Schmidt, DC; Svensson, BG; Hansen, JL; Larsen, AN
    Sb-enhanced diffusion in strained Si1-xGex: Dependence on biaxial compression
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42. Joelsson, KB; Hultman, L; Ni, WX; Cardenas, J; Svensson, BG; Olsson, E; Hansson, GV
    Er doping of Si and Si0.88Ge0.12 using Er2O3 and ErF3 evaporation during molecular beam epitaxy - A transmission electron microscopy study
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43. Mangelinck, D; Cardenas, J; d'Heurle, FM; Svensson, BG; Gas, P
    Solid solubility of As in CoSi2 and redistribution at the CoSi2/Si interface
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    D. Mangelinck et al., "Solid solubility of As in CoSi2 and redistribution at the CoSi2/Si interface", J APPL PHYS, 86(9), 1999, pp. 4908-4915
44. Hallen, A; Keskitalo, N; Josyula, L; Svensson, BG
    Migration energy for the silicon self-interstitial
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    A. Hallen et al., "Migration energy for the silicon self-interstitial", J APPL PHYS, 86(1), 1999, pp. 214-216
45. Schmidt, DC; Svensson, BG; Lindstrom, JL; Godey, S; Ntsoenzok, E; Barbot, JF; Blanchard, C
    2 MeV electron irradiation of silicon at elevated temperatures: Influence on platinum diffusion and creation of electrically active defects
    JOURNAL OF APPLIED PHYSICS
    
    D.C. Schmidt et al., "2 MeV electron irradiation of silicon at elevated temperatures: Influence on platinum diffusion and creation of electrically active defects", J APPL PHYS, 85(7), 1999, pp. 3556-3560
46. Fatima, S; Jagadish, C; Lalita, J; Svensson, BG; Hallen, A
    Hydrogen interaction with implantation induced point defects in p-type silicon
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47. Aberg, D; Linnarsson, MK; Svensson, BG; Hallberg, T; Lindstrom, JL
    Ultrashallow thermal donor formation in silicon by annealing in ambient oxygen
    JOURNAL OF APPLIED PHYSICS
    
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48. Schmidt, DC; Svensson, BG; Barbot, JF; Blanchard, C
    Stability of proximity gettering of platinum in silicon implanted with alpha particles at low doses
    APPLIED PHYSICS LETTERS
    
    D.C. Schmidt et al., "Stability of proximity gettering of platinum in silicon implanted with alpha particles at low doses", APPL PHYS L, 75(3), 1999, pp. 364-366
49. Schmidt, DC; Svensson, BG; Godey, S; Ntsoenzok, E; Barbot, JF; Blanchard, C
    The influence of diffusion temperature and ion dose on proximity getteringof platinum in silicon implanted with alpha particles at low doses
    APPLIED PHYSICS LETTERS
    
    D.C. Schmidt et al., "The influence of diffusion temperature and ion dose on proximity getteringof platinum in silicon implanted with alpha particles at low doses", APPL PHYS L, 74(22), 1999, pp. 3329-3331
50. DOYLE JP; KUZNETSOV AY; SVENSSON BG
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51. Achtziger, N; Hulsen, C; Witthuhn, W; Linnarsson, MK; Janson, M; Svensson, BG
    Mobility passivating effect and thermal stability of hydrogen in silicon carbide
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52. Aberg, D; Hallberg, T; Svensson, BG; Lindstrom, JL; Linnarsson, MK
    Ultra-shallow thermal donor formation in oxygen-containing ambient
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53. Kuznetsov, AY; Aberg, D; Svensson, BG
    Shallow donors in silicon crystallized from amorphous phase via a silicidemediated epitaxy
    PHYSICA STATUS SOLIDI B-BASIC RESEARCH
    
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54. SVENSSON BG; LINNARSSON MK; CARDENAS J; PETRAVIC M
    SIMS ANALYSIS OF EPITAXIAL LAYERS FOR POWER-ELECTRONICS AND MICROELECTRONICS
    Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms
    
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55. Kuznetsov, AY; Grahn, J; Cardenas, J; Svensson, BG; Hansen, JL; Larsen, AN
    Effect of injection of Si self-interstitials on Sb diffusion in Si/Si1-xGex/Si heterostructures
    PHYSICAL REVIEW B-CONDENSED MATTER
    
    A.Y. Kuznetsov et al., "Effect of injection of Si self-interstitials on Sb diffusion in Si/Si1-xGex/Si heterostructures", PHYS REV B, 58(20), 1998, pp. R13355-R13358
56. Aberg, D; Svensson, BG; Hallberg, T; Lindstrom, JL
    Kinetic study of oxygen dimer and thermal donor formation in silicon
    PHYSICAL REVIEW B-CONDENSED MATTER
    
    D. Aberg et al., "Kinetic study of oxygen dimer and thermal donor formation in silicon", PHYS REV B, 58(19), 1998, pp. 12944-12951
57. NI WX; HANSSON GV; CARDENAS J; SVENSSON BG
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58. SCHMIDT DC; SVENSSON BG; KESKITALO N; GODEY S; NTSOENZOK E; BARBOT JF; BLANCHARD C
    PROXIMITY GETTERING OF PLATINUM IN PROTON-IRRADIATED SILICON
    Journal of applied physics
    
    D.C. Schmidt et al., "PROXIMITY GETTERING OF PLATINUM IN PROTON-IRRADIATED SILICON", Journal of applied physics, 84(8), 1998, pp. 4214-4218
59. DOYLE JP; LINNARSSON MK; PELLEGRINO P; KESKITALO N; SVENSSON BG; SCHONER A; NORDELL N; LINDSTROM JL
    ELECTRICALLY ACTIVE POINT-DEFECTS IN N-TYPE 4H-SIC
    Journal of applied physics
    
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60. DOYLE JP; SCHONER A; NORDELL N; GALECKAS A; BLEICHNER H; LINNARSSON MK; LINNROS J; SVENSSON BG
    OBSERVATION OF NEAR-SURFACE ELECTRICALLY ACTIVE DEFECTS IN N-TYPE 6H-SIC
    Journal of applied physics
    
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61. Cardenas, J; Svensson, BG; Petravic, M
    Evidence for the influence of thermal spikes on ion induced mixing in Si at energies between 3 and 300 keV
    JOURNAL OF APPLIED PHYSICS
    
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62. Kuznetsov, AY; Svensson, BG; Nur, O; Hultman, L
    Nickel distribution in crystalline and amorphous silicon during solid phase epitaxy of amorphous silicon
    JOURNAL OF APPLIED PHYSICS
    
    A.Y. Kuznetsov et al., "Nickel distribution in crystalline and amorphous silicon during solid phase epitaxy of amorphous silicon", J APPL PHYS, 84(12), 1998, pp. 6644-6649
63. CARDENAS J; SVENSSON BG; NI WX; JOELSSON KB; HANSSON GV
    INJECTION OF SELF-INTERSTITIALS DURING SPUTTER DEPTH PROFILING OF SI AT ROOM-TEMPERATURE
    Applied physics letters
    
    J. Cardenas et al., "INJECTION OF SELF-INTERSTITIALS DURING SPUTTER DEPTH PROFILING OF SI AT ROOM-TEMPERATURE", Applied physics letters, 73(21), 1998, pp. 3088-3089
64. DOYLE JP; ABOELFOTOH MO; SVENSSON BG; SCHONER A; NORDELL N
    CHARACTERIZATION OF ELECTRICALLY ACTIVE DEEP-LEVEL DEFECTS IN 4H AND 6H SIC
    DIAMOND AND RELATED MATERIALS
    
    J.P. Doyle et al., "CHARACTERIZATION OF ELECTRICALLY ACTIVE DEEP-LEVEL DEFECTS IN 4H AND 6H SIC", DIAMOND AND RELATED MATERIALS, 6(10), 1997, pp. 1388-1391
65. SVENSSON BG
    SWARMING BEHAVIOR, SEXUAL DIMORPHISM, AND FEMALE REPRODUCTIVE STATUS IN THE SEX ROLE-REVERSED DANCE FLY SPECIES RHAMPHOMYIA-MARGINATA
    Journal of insect behavior
    
    B.G. Svensson, "SWARMING BEHAVIOR, SEXUAL DIMORPHISM, AND FEMALE REPRODUCTIVE STATUS IN THE SEX ROLE-REVERSED DANCE FLY SPECIES RHAMPHOMYIA-MARGINATA", Journal of insect behavior, 10(6), 1997, pp. 783-804
66. HANSSON M; BARREGARD L; SALLSTEN G; SVENSSON BG; RAPPE C
    POLYCHLORINATED DIBENZO-P-DIOXIN AND DIBENZOFURAN LEVELS AND PATTERNSIN POLYVINYLCHLORIDE AND CHLORALKALI INDUSTRY WORKERS
    International archives of occupational and environmental health
    
    M. Hansson et al., "POLYCHLORINATED DIBENZO-P-DIOXIN AND DIBENZOFURAN LEVELS AND PATTERNSIN POLYVINYLCHLORIDE AND CHLORALKALI INDUSTRY WORKERS", International archives of occupational and environmental health, 70(1), 1997, pp. 51-56
67. LALITA J; SVENSSON BG; JAGADISH C; HALLEN A
    ANNEALING STUDIES OF POINT-DEFECTS IN LOW-DOSE MEV ION-IMPLANTED SILICON
    Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms
    
    J. Lalita et al., "ANNEALING STUDIES OF POINT-DEFECTS IN LOW-DOSE MEV ION-IMPLANTED SILICON", Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 127, 1997, pp. 69-73
68. KESKITALO N; HALLEN A; JOSYULA L; SVENSSON BG
    IMPROVED LIFETIME CHARACTERISTICS IN HEAVY-ION IRRADIATED SILICON
    Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms
    
    N. Keskitalo et al., "IMPROVED LIFETIME CHARACTERISTICS IN HEAVY-ION IRRADIATED SILICON", Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 127, 1997, pp. 410-413
69. WILLIAMS JS; SHORT KT; PETRAVIC M; SVENSSON BG
    OXIDATION OF SILICON BY LOW-ENERGY OXYGEN IONS
    Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms
    
    J.S. Williams et al., "OXIDATION OF SILICON BY LOW-ENERGY OXYGEN IONS", Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 121(1-4), 1997, pp. 24-29
70. MANGELINCK D; CARDENAS J; SVENSSON BG
    ARSENIC SOLUBILITY IN SINGLE-CRYSTALLINE COBALT DISILICIDE
    Microelectronic engineering
    
    D. Mangelinck et al., "ARSENIC SOLUBILITY IN SINGLE-CRYSTALLINE COBALT DISILICIDE", Microelectronic engineering, 37-8(1-4), 1997, pp. 467-473
71. SVENSSON BG; JAGADISH C; HALLEN A; LALITA J
    GENERATION OF VACANCY-TYPE POINT-DEFECTS IN SINGLE COLLISION CASCADESDURING SWIFT-ION BOMBARDMENT OF SILICON
    Physical review. B, Condensed matter
    
    B.G. Svensson et al., "GENERATION OF VACANCY-TYPE POINT-DEFECTS IN SINGLE COLLISION CASCADESDURING SWIFT-ION BOMBARDMENT OF SILICON", Physical review. B, Condensed matter, 55(16), 1997, pp. 10498-10507
72. WANG Z; RAMANATH G; ALLEN LH; ROCKETT A; DOYLE JP; SVENSSON BG
    KINETICS OF THIN-FILM REACTIONS OF CU A-GE BILAYERS/
    Journal of applied physics
    
    Z. Wang et al., "KINETICS OF THIN-FILM REACTIONS OF CU A-GE BILAYERS/", Journal of applied physics, 82(7), 1997, pp. 3281-3286
73. NI WX; JOELSSON KB; DU CX; BUYANOVA IA; POZINA G; CHEN WM; HANSSON GV; MONEMAR B; CARDENAS J; SVENSSON BG
    ER O AND ER/F DOPING DURING MOLECULAR-BEAM EPITAXIAL-GROWTH OF SI LAYERS FOR EFFICIENT 1.54 MU-M LIGHT-EMISSION/
    Applied physics letters
    
    W.X. Ni et al., "ER O AND ER/F DOPING DURING MOLECULAR-BEAM EPITAXIAL-GROWTH OF SI LAYERS FOR EFFICIENT 1.54 MU-M LIGHT-EMISSION/", Applied physics letters, 70(25), 1997, pp. 3383-3385
74. SKARPING G; DALENE M; SVENSSON BG; LITTORIN M; AKESSON B; WELINDER H; SKERFVING S
    BIOMARKERS OF EXPOSURE, ANTIBODIES, AND RESPIRATORY SYMPTOMS IN WORKERS HEATING POLYURETHANE GLUE
    Occupational and environmental medicine
    
    G. Skarping et al., "BIOMARKERS OF EXPOSURE, ANTIBODIES, AND RESPIRATORY SYMPTOMS IN WORKERS HEATING POLYURETHANE GLUE", Occupational and environmental medicine, 53(3), 1996, pp. 180-187
75. MOHADJERI B; PETRAVIC M; SVENSSON BG
    OXIDATION-ENHANCED ROUGHENING OF THIN CO FILMS DURING SPUTTERING BY O-2(+) IONS
    Journal of vacuum science & technology. A. Vacuum, surfaces, and films
    
    B. Mohadjeri et al., "OXIDATION-ENHANCED ROUGHENING OF THIN CO FILMS DURING SPUTTERING BY O-2(+) IONS", Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 14(4), 1996, pp. 2192-2201
76. LALITA J; KESKITALO N; HALLEN A; JAGADISH C; SVENSSON BG
    DEFECT EVOLUTION IN MEV ION-IMPLANTED SILICON
    Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms
    
    J. Lalita et al., "DEFECT EVOLUTION IN MEV ION-IMPLANTED SILICON", Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 120(1-4), 1996, pp. 27-32
77. PETRAVIC M; SVENSSON BG; WILLIAMS JS; GLASKO JM
    SEGREGATION EFFECTS IN SIMS PROFILING OF IMPURITIES IN SILICON BY LOW-ENERGY OXYGEN IONS
    Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms
    
    M. Petravic et al., "SEGREGATION EFFECTS IN SIMS PROFILING OF IMPURITIES IN SILICON BY LOW-ENERGY OXYGEN IONS", Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 118(1-4), 1996, pp. 151-155
78. ZARING C; PISCH A; CARDENAS J; GAS P; SVENSSON BG
    SOLID SOLUBILITY AND DIFFUSION OF BORON IN SINGLE-CRYSTALLINE COBALT DISILICIDE
    Journal of applied physics
    
    C. Zaring et al., "SOLID SOLUBILITY AND DIFFUSION OF BORON IN SINGLE-CRYSTALLINE COBALT DISILICIDE", Journal of applied physics, 80(5), 1996, pp. 2742-2748
79. DOYLE JP; SVENSSON BG; ABOELFOTOH MO
    COPPER GERMANIDE SCHOTTKY-BARRIER CONTACTS TO SILICON
    Journal of applied physics
    
    J.P. Doyle et al., "COPPER GERMANIDE SCHOTTKY-BARRIER CONTACTS TO SILICON", Journal of applied physics, 80(4), 1996, pp. 2530-2532
80. CARDENAS J; ZHANG SL; SVENSSON BG; PETERSSON CS
    ON THE FORMATION OF INHOMOGENEITIES IN EPITAXIAL COSI2 LAYERS GROWN FROM THE INTERACTION OF CO TI BILAYERS WITH SI[100] SUBSTRATES/
    Journal of applied physics
    
    J. Cardenas et al., "ON THE FORMATION OF INHOMOGENEITIES IN EPITAXIAL COSI2 LAYERS GROWN FROM THE INTERACTION OF CO TI BILAYERS WITH SI[100] SUBSTRATES/", Journal of applied physics, 80(2), 1996, pp. 762-768
81. BERLIN KJ; EDLING C; PERSSON B; AHLBORG G; HILLERT L; HOGSTEDT B; LUNDBERG I; SVENSSON BG; THIRINGER G; ORBAEK P
    CANCER INCIDENCE AND MORTALITY OF PATIENTS WITH SUSPECTED SOLVENT-RELATED DISORDERS
    Scandinavian journal of work, environment & health
    
    K.J. Berlin et al., "CANCER INCIDENCE AND MORTALITY OF PATIENTS WITH SUSPECTED SOLVENT-RELATED DISORDERS", Scandinavian journal of work, environment & health, 21(5), 1995, pp. 362-367
82. SVENSSON BG; NILSSON A; JONSSON E; SCHUTZ A; AKESSON B; HAGMAR L
    FISH CONSUMPTION AND EXPOSURE TO PERSISTENT ORGANOCHLORINE COMPOUNDS,MERCURY, SELENIUM AND METHYLAMINES AMONG SWEDISH FISHERMEN
    Scandinavian journal of work, environment & health
    
    B.G. Svensson et al., "FISH CONSUMPTION AND EXPOSURE TO PERSISTENT ORGANOCHLORINE COMPOUNDS,MERCURY, SELENIUM AND METHYLAMINES AMONG SWEDISH FISHERMEN", Scandinavian journal of work, environment & health, 21(2), 1995, pp. 96-105
83. SVENSSON BG; MIKOCZY Z; STROMBERG U; HAGMAR L
    MORTALITY AND CANCER INCIDENCE AMONG SWEDISH FISHERMEN WITH A HIGH DIETARY-INTAKE OF PERSISTENT ORGANOCHLORINE COMPOUNDS
    Scandinavian journal of work, environment & health
    
    B.G. Svensson et al., "MORTALITY AND CANCER INCIDENCE AMONG SWEDISH FISHERMEN WITH A HIGH DIETARY-INTAKE OF PERSISTENT ORGANOCHLORINE COMPOUNDS", Scandinavian journal of work, environment & health, 21(2), 1995, pp. 106-115
84. LALITA J; SVENSSON BG; JAGADISH C
    POINT-DEFECTS OBSERVED IN CRYSTALLINE SILICON IMPLANTED BY MEV SI IONS AT ELEVATED-TEMPERATURES
    Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms
    
    J. Lalita et al., "POINT-DEFECTS OBSERVED IN CRYSTALLINE SILICON IMPLANTED BY MEV SI IONS AT ELEVATED-TEMPERATURES", Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 96(1-2), 1995, pp. 210-214
85. KUZNETSOV AY; SVENSSON BG
    TRANSIENT KINETICS IN SOLID-PHASE EPITAXY OF NI DOPED AMORPHOUS-SILICON
    Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms
    
    A.Y. Kuznetsov e B.G. Svensson, "TRANSIENT KINETICS IN SOLID-PHASE EPITAXY OF NI DOPED AMORPHOUS-SILICON", Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 96(1-2), 1995, pp. 261-264
86. SVENSSON BG; JAGADISH C; HALLEN A; LALITA J
    POINT-DEFECTS IN MEV ION-IMPLANTED SILICON STUDIED BY DEEP-LEVEL TRANSIENT SPECTROSCOPY
    Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms
    
    B.G. Svensson et al., "POINT-DEFECTS IN MEV ION-IMPLANTED SILICON STUDIED BY DEEP-LEVEL TRANSIENT SPECTROSCOPY", Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 106(1-4), 1995, pp. 183-190
87. LALITA J; JAGADISH C; SVENSSON BG
    SILICON IMPLANTED WITH MEV(12)C IONS - TEMPERATURE-DEPENDENCE OF DEFECT FORMATION AT LOW-DOSES
    Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms
    
    J. Lalita et al., "SILICON IMPLANTED WITH MEV(12)C IONS - TEMPERATURE-DEPENDENCE OF DEFECT FORMATION AT LOW-DOSES", Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 106(1-4), 1995, pp. 237-241
88. ABOELFOTOH MO; SVENSSON BG
    INTERACTION BETWEEN COPPER AND POINT-DEFECTS IN SILICON IRRADIATED WITH 2-MEV ELECTRONS
    Physical review. B, Condensed matter
    
    M.O. Aboelfotoh e B.G. Svensson, "INTERACTION BETWEEN COPPER AND POINT-DEFECTS IN SILICON IRRADIATED WITH 2-MEV ELECTRONS", Physical review. B, Condensed matter, 52(4), 1995, pp. 2522-2527
89. HUANG W; AKESSON B; SVENSSON BG; SCHUTZ A; BURK RF; SKERFVING S
    SELENOPROTEIN-P AND GLUTATHIONE-PEROXIDASE (EC-1.11.1.9) IN PLASMA ASINDEXES OF SELENIUM STATUS IN RELATION TO THE INTAKE OF FISH
    British Journal of Nutrition
    
    W. Huang et al., "SELENOPROTEIN-P AND GLUTATHIONE-PEROXIDASE (EC-1.11.1.9) IN PLASMA ASINDEXES OF SELENIUM STATUS IN RELATION TO THE INTAKE OF FISH", British Journal of Nutrition, 73(3), 1995, pp. 455-461
90. DOYLE JP; SVENSSON BG; JOHANSSON S
    MORPHOLOGICAL INSTABILITY OF BILAYERS OF COPPER GERMANIDE FILMS AND AMORPHOUS-GERMANIUM
    Applied physics letters
    
    J.P. Doyle et al., "MORPHOLOGICAL INSTABILITY OF BILAYERS OF COPPER GERMANIDE FILMS AND AMORPHOUS-GERMANIUM", Applied physics letters, 67(19), 1995, pp. 2804-2806
91. KUZNETSOV AY; SVENSSON BG
    NICKEL ATOMIC DIFFUSION IN AMORPHOUS-SILICON
    Applied physics letters
    
    A.Y. Kuznetsov e B.G. Svensson, "NICKEL ATOMIC DIFFUSION IN AMORPHOUS-SILICON", Applied physics letters, 66(17), 1995, pp. 2229-2231
92. ZHANG SL; CARDENAS J; DHEURLE FM; SVENSSON BG; PETERSSON CS
    ON THE FORMATION OF EPITAXIAL COSI2 FROM THE REACTION OF SI WITH A COTI BILAYER/
    Applied physics letters
    
    S.L. Zhang et al., "ON THE FORMATION OF EPITAXIAL COSI2 FROM THE REACTION OF SI WITH A COTI BILAYER/", Applied physics letters, 66(1), 1995, pp. 58-60
93. SVENSSON BG; PETERSSON E
    DIURNAL AND SEASONAL-VARIATIONS IN SWARMING AND MATING-BEHAVIOR OF THE DANCE FLY EMPIS-BOREALIS (DIPTERA, EMPIDIDAE)
    Annales zoologici Fennici
    
    B.G. Svensson e E. Petersson, "DIURNAL AND SEASONAL-VARIATIONS IN SWARMING AND MATING-BEHAVIOR OF THE DANCE FLY EMPIS-BOREALIS (DIPTERA, EMPIDIDAE)", Annales zoologici Fennici, 32(4), 1995, pp. 403-409
94. MOHADJERI B; SVENSSON BG
    SECONDARY-ION MASS-SPECTROMETRY MEASUREMENTS OF SHALLOW BORON PROFILES IN COBALT, SILICON, AND COBALT DISILICIDE
    Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena
    
    B. Mohadjeri e B.G. Svensson, "SECONDARY-ION MASS-SPECTROMETRY MEASUREMENTS OF SHALLOW BORON PROFILES IN COBALT, SILICON, AND COBALT DISILICIDE", Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 12(1), 1994, pp. 209-213
95. HALLEN A; SVENSSON BG
    DIVACANCY DISTRIBUTIONS IN FAST-ION IRRADIATED SILICON
    Radiation effects and defects in solids
    
    A. Hallen e B.G. Svensson, "DIVACANCY DISTRIBUTIONS IN FAST-ION IRRADIATED SILICON", Radiation effects and defects in solids, 128(3), 1994, pp. 179-186
96. SVENSSON BG; PETERSSON E
    MATE CHOICE TACTICS AND SWARM SIZE - A MODEL AND A TEST IN A DANCE FLY
    Behavioral ecology and sociobiology
    
    B.G. Svensson e E. Petersson, "MATE CHOICE TACTICS AND SWARM SIZE - A MODEL AND A TEST IN A DANCE FLY", Behavioral ecology and sociobiology, 35(3), 1994, pp. 161-168
97. SVENSSON BG; HALLBERG T; NILSSON A; SCHUTZ A; HAGMAR L
    PARAMETERS OF IMMUNOLOGICAL COMPETENCE IN SUBJECTS WITH HIGH CONSUMPTION OF FISH CONTAMINATED WITH PERSISTENT ORGANOCHLORINE COMPOUNDS
    International archives of occupational and environmental health
    
    B.G. Svensson et al., "PARAMETERS OF IMMUNOLOGICAL COMPETENCE IN SUBJECTS WITH HIGH CONSUMPTION OF FISH CONTAMINATED WITH PERSISTENT ORGANOCHLORINE COMPOUNDS", International archives of occupational and environmental health, 65(6), 1994, pp. 351-358
98. CARDENAS J; HATZIKONSTANTINIDOU S; ZHANG SL; SVENSSON BG; PETERSSON CS
    INTERDIFFUSION AND PHASE-FORMATION DURING THERMAL-PROCESSING OF CO TI/SIT(100) STRUCTURES/
    Physica scripta. T
    
    J. Cardenas et al., "INTERDIFFUSION AND PHASE-FORMATION DURING THERMAL-PROCESSING OF CO TI/SIT(100) STRUCTURES/", Physica scripta. T, 54, 1994, pp. 198-201
99. DOYLE JP; SVENSSON BG; ABOELFOTOH MO; HUDNER J
    AN INVESTIGATION OF THE STABILITY OF COPPER GERMANIDE THIN-FILMS IN THE PRESENCE OF SI AND SIO2
    Physica scripta. T
    
    J.P. Doyle et al., "AN INVESTIGATION OF THE STABILITY OF COPPER GERMANIDE THIN-FILMS IN THE PRESENCE OF SI AND SIO2", Physica scripta. T, 54, 1994, pp. 297-299
100. SVENSSON BG; LINNARSSON MK; MOHADJERI B; PETRAVIC M; WILLIAMS JS
     SIMS AND DEPTH PROFILING OF SEMICONDUCTOR STRUCTURES
     Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms
     
     B.G. Svensson et al., "SIMS AND DEPTH PROFILING OF SEMICONDUCTOR STRUCTURES", Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 85(1-4), 1994, pp. 363-369