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La ricerca find articoli where authors phrase all words ' Sekigawa, T' sort by level,fasc_key/DESCEND, pagina_ini_num/ASCEND ha restituito 21 riferimenti
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    1. Ogura, Y; Kondo, M; Morimoto, T; Notomi, A; Sekigawa, T
      Oxygen permeability of Y2SiO5

      MATERIALS TRANSACTIONS
    2. Sekigawa, T; Oguir, K; Kochiyama, J; Miho, K
      Endurance test of oxidation-resistant CVD-SIC coating on C/C composites for space vehicle

      MATERIALS TRANSACTIONS
    3. Oguri, K; Sekigawa, T; Kochiyama, J; Miho, K
      Catalycity measurement of oxidation-resistant CVD-SiC coating on C/C composite for space vehicle

      MATERIALS TRANSACTIONS
    4. Ogura, Y; Kondo, M; Morimoto, T; Notomi, A; Sekigawa, T
      Vaporization behavior of plasma sprayed Y2SiO5 coatings

      JOURNAL OF THE JAPAN INSTITUTE OF METALS
    5. Suzuki, E; Ishii, K; Kanemaru, S; Maeda, T; Tsutsumi, T; Sekigawa, T; Nagai, K; Hiroshima, H
      Highly suppressed short-channel effects in ultrathin SOI n-MOSFET's

      IEEE TRANSACTIONS ON ELECTRON DEVICES
    6. Yamanaka, M; Sakata, I; Sekigawa, T
      Effects of film quality of hydrogenated amorphous silicon grown by thermalchemical-vapor-depositon on subsequent in-situ hydrogenation processes

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
    7. Suzuki, M; Maezawa, M; Takato, H; Nakagawa, H; Hirayama, F; Kiryu, S; Aoyagi, M; Sekigawa, T; Shoji, A
      An interface circuit for a Josephson-CMOS hybrid digital system

      IEEE TRANSACTIONS ON APPLIED SUPERCONDUCTIVITY
    8. Sakakibara, N; Notomi, A; Ogura, Y; Kondo, M; Fujiwara, C; Sekigawa, T; Kouchiyama, J; Miho, K
      Y2SiO5 high temperature oxidation resistant coating on C/C composites by plasma spraying

      JOURNAL OF THE JAPAN INSTITUTE OF METALS
    9. Ishida, Y; Takahashi, T; Okumura, H; Sekigawa, T; Yoshida, S
      Elongated shaped Si island formation on 3C-SiC by chemical vapor deposition and its application to antiphase domain observation

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
    10. Fukuda, K; Nagai, K; Sekigawa, T; Yoshida, S; Arai, K; Yoshikawa, M
      Improvement of SiO2/4H-SiC interface using high-temperature hydrogen annealing at low pressure and vacuum annealing

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
    11. Ishii, K; Suzuki, E; Kanemaru, S; Maeda, T; Tsutsumi, T; Nagai, K; Sekigawa, T; Hiroshima, H
      Fabrication of 40-150 nm gate length ultrathin n-MOSFETs using epitaxial layer transfer SOI wafers

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
    12. ISHII K; SUZUKI E; KANEMARU S; MAEDA T; NAGAI K; SEKIGAWA T
      SUPPRESSED THRESHOLD VOLTAGE ROLL-OFF CHARACTERISTIC OF 40NM GATE LENGTH ULTRATHIN SOI MOSFET

      Electronics Letters
    13. ISHII K; SUZUKI E; SEKIGAWA T
      FABRICATION OF NANOMETER-SIZE SI WIRES USING A BEVEL SIO2 WALL AS AN ELECTRON-CYCLOTRON-RESONANCE PLASMA-ETCHING MASK

      Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena
    14. TAKATO H; SEKIGAWA T
      SURFACE PASSIVATION AT A SIO2 N(+)-LAYER INTERFACE/

      Solar energy materials and solar cells
    15. TAKAHASHI T; SHIMOKAWA R; MATSUMOTO Y; ISHII K; SEKIGAWA T
      RECRYSTALLIZATION OF POLYCRYSTALLINE SILICON FILMS ON CERAMICS BY ELECTRON-BEAM

      Solar energy materials and solar cells
    16. SAKATA I; YAMANAKA M; SEKIGAWA T
      RELATIONSHIP BETWEEN CARRIER DIFFUSION LENGTHS AND DEFECT DENSITY IN HYDROGENATED AMORPHOUS-SILICON

      Journal of applied physics
    17. ISHIDA Y; TAKAHASHI T; OKUMURA H; YOSHIDA S; SEKIGAWA T
      ATOMICALLY FLAT 3C-SIC EPILAYERS BY LOW-PRESSURE CHEMICAL-VAPOR-DEPOSITION

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
    18. TAKATO H; SEKIGAWA T
      SURFACE PASSIVATION OF THIN SILICON SOLAR-CELLS USING SILICON-ON-INSULATOR WAFER

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
    19. SAKATA I; YAMANAKA M; NAGAI K; SEKIGAWA T; HAYASHI Y
      AMORPHOUS-SILICON AMORPHOUS-SILICON CARBIDE HETEROJUNCTIONS APPLIED TO MEMORY DEVICE STRUCTURES

      Electronics Letters
    20. SAKATA I; YAMANAKA M; SEKIGAWA T
      RELATIONSHIP BETWEEN CARRIER DIFFUSION LENGTH AND LIGHT-INDUCED DEFECTS IN HYDROGENATED AMORPHOUS-SILICON

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS
    21. TAKATO H; YUI N; HAYASHI Y; SEKIGAWA T
      CHARACTERISTICS OF 3-MU-M-THICK SILICON SOLAR-CELLS USING BONDED SILICON-ON-INSULATOR WAFER

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS


ASDD Area Sistemi Dipartimentali e Documentali, Università di Bologna, Catalogo delle riviste ed altri periodici
Documento generato il 27/10/20 alle ore 08:02:33