Catalogo Articoli (Spogli Riviste)

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La ricerca find articoli where authors phrase all words ' Sano, E' sort by level,fasc_key/DESCEND, pagina_ini_num/ASCEND ha restituito 51 riferimenti
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    1. Sano, E
      High-speed lightwave communication ICs based on III-V compound semiconductors

      IEEE COMMUNICATIONS MAGAZINE
    2. Sano, K; Murata, K; Otsuji, T; Akeyoshi, T; Shimizu, N; Sano, E
      An 80-Gb/s optoelectronic delayed flip-flop IC using resonant tunneling diodes and uni-traveling-carrier photodiode

      IEEE JOURNAL OF SOLID-STATE CIRCUITS
    3. Murata, K; Sano, K; Sano, E; Sugitani, S; Enoki, T
      Fully monolithic integrated 43 Gbit/s clock and data recovery circuit in InPHEMT technology

      ELECTRONICS LETTERS
    4. Murata, K; Otsuji, T; Sano, E; Kimura, S; Yamane, Y
      70-Gbit/s multiplexer and 50-Gbit/s decision IC modules using InAlAs/InGaAs/InP HEMTs

      IEICE TRANSACTIONS ON ELECTRONICS
    5. Sano, E
      20-Gbit/s multiplexer and demultiplexer ICs using production-level siliconbipolar transistors

      IEICE TRANSACTIONS ON ELECTRONICS
    6. Goodrich, DC; Chehbouni, A; Goff, B; MacNish, B; Maddock, T; Moran, S; Shuttleworth, WJ; Williams, DG; Watts, C; Hipps, LH; Cooper, DI; Schieldge, J; Kerr, YH; Arias, H; Kirkland, M; Carlos, R; Cayrol, P; Kepner, W; Jones, B; Avissar, R; Begue, A; Bonnefond, JM; Boulet, G; Branan, B; Brunel, JP; Chen, LC; Clarke, T; Davis, MR; DeBruin, H; Dedieu, G; Elguero, E; Eichinger, WE; Everitt, J; Garatuza-Payan, J; Gempko, VL; Gupta, H; Harlow, C; Hartogensis, O; Helfert, M; Holifield, C; Hymer, D; Kahle, A; Keefer, T; Krishnamoorthy, S; Lhomme, JP; Lagouarde, JP; Lo Seen, D; Luquet, D; Marsett, R; Monteny, B; Ni, W; Nouvellon, Y; Pinker, R; Peters, C; Pool, D; Qi, J; Rambal, S; Rodriguez, J; Santiago, F; Sano, E; Schaeffer, SM; Schulte, M; Scott, R; Shao, X; Snyder, KA; Sorooshian, S; Unkrich, CL; Whitaker, M; Yucel, I
      Preface paper to the Semi-Arid Land-Surface-Atmosphere (SALSA) Program special issue

      AGRICULTURAL AND FOREST METEOROLOGY
    7. Nakajima, H; Sano, E; Ida, M; Yamahata, S
      80GHz 4 : 1 frequency divider IC using non-self-aligned InP/InGaAs heterostructure bipolar transistors

      ELECTRONICS LETTERS
    8. Fujita, M; Sano, E; Kubo, R; Kawashima, T; Yamanaka, M; Izawa, Y; Nakai, S; Yamanaka, C
      New potential of a direct laser-diode-pumped Yb : YAG laser

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS
    9. Sano, K; Murata, K; Otsuji, T; Akeyoshi, T; Shimizu, N; Yamamoto, M; Ishibashi, T; Sano, E
      Ultra-fast optoelectronic decision circuit using resonant tunneling diodesand a uni-traveling-carrier photodiode

      IEICE TRANSACTIONS ON ELECTRONICS
    10. Murata, K; Sano, K; Akeyoshi, T; Shimizu, N; Sano, E; Yamamoto, M; Ishibashi, T
      An optoelectronic clock recovery circuit using a resonant tunneling diode and a uni-traveling-carrier photodiode

      IEICE TRANSACTIONS ON ELECTRONICS
    11. Sano, E; Yamane, Y
      InP-based lightwave communication ICs for 40 Gbit/s and beyond

      IEICE TRANSACTIONS ON ELECTRONICS
    12. Sano, E; Kurishima, K; Nakajima, H; Yamahata, S
      High-speed, low-power lightwave communication ICs using InP/InGaAs double-heterojunction bipolar transistors

      IEICE TRANSACTIONS ON ELECTRONICS
    13. Murata, K; Sano, K; Akeyoshi, T; Shimizu, N; Sano, E; Yamamoto, M; Ishibashi, T
      An optoelectronic clock recovery circuit using a resonant tunneling diode and a uni-traveling-carrier photodiode

      IEICE TRANSACTIONS ON COMMUNICATIONS
    14. Sano, E; Nakajima, H; Watanabe, N; Yamahata, S; Ishii, Y
      40Gbit/s 1 : 4 demultiplexer IC using InP-based heterojunction bipolar transistors

      ELECTRONICS LETTERS
    15. Sano, K; Murata, K; Otsuji, T; Akeyoshi, T; Shimizu, N; Sano, E
      80Gbit/s optoelectronic delayed flip-flop circuit using resonant tunnelling diodes and uni-travelling-carrier photodiode

      ELECTRONICS LETTERS
    16. Sano, E; Nakajima, H; Watanabe, N; Yamahata, S
      40Gbit/s decision IC using InP/InGaAs composite-collector heterojunction bipolar transistors

      ELECTRONICS LETTERS
    17. Akeyoshi, T; Shimizu, N; Osaka, J; Yamamoto, M; Ishibashi, T; Sano, K; Murata, K; Sano, E
      An optoelectronic logic gate monolithically integrating resonant tunnelingdiodes and a uni-traveling-carrier photodiode

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
    18. Roy, PK; Fujita, M; Imasaki, K; Moon, A; Tanaka, H; Sano, E; Tsunawaki, Y; Ohigashi, N; Mima, K; Nakai, S; Yamanaka, C
      Experimental study on electron beam energy recovery system using a laser-heated electron gun and a multistage electron collector for highly efficientbeam application

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
    19. Ichiryu, D; Sano, E; Horikoshi, Y
      Characteristics of molecular beam epitaxy grown GaAs simultaneously doped with Si and Be

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
    20. FUKUSHIMA S; SANO E; YAMANE Y; GENDA K; MATSUMURA T
      CROSSPOINT SWITCH EQUIPPED WITH AN INTERFACE FOR SERIAL OPTICAL INTERCONNECTION

      IEEE photonics technology letters
    21. FUKUSHIMA S; SANO E; YAMANE Y; GENDA K; MATSUMURA T
      10-GBIT S SERIAL OPTICAL INTERCONNECTION FOR AN ATM SWITCH/

      Fiber and integrated optics
    22. ROY PK; MOON A; MIMA K; NAKAI S; FUJITA M; IMASAKI K; YAMANAKA C; TANAKA H; SANO E; TSUNAWAKI Y
      EXPERIMENTAL-STUDY ON AN ELECTRON-BEAM ENERGY RECOVERY-SYSTEM USING AMULTISTAGE COLLECTOR

      Review of scientific instruments
    23. SANO K; MURATA K; AKEYOSHI T; SHIMIZU N; OTSUJI T; YAMAMOTO M; ISHIBASHI T; SANO E
      ULTRA-FAST OPTOELECTRONIC CIRCUIT USING RESONANT-TUNNELING DIODES ANDUNITRAVELLING-CARRIER PHOTODIODE

      Electronics Letters
    24. MURATA E; SANO K; AKEYOSHI T; SHIMIZU N; SANO E; YAMAMOTO M; ISHIBASHI T
      OPTOELECTRONIC CLOCK RECOVERY CIRCUIT USING RESONANT-TUNNELING DIODE AND UNI-TRAVELING-CARRIER PHOTODIODE

      Electronics Letters
    25. ROY PK; MOON A; OHKUBO K; NAKAO N; MIMA K; NAKAI S; FUJITA M; IMASAKI K; YAMANAKA C; SANO E; TSUNAWAKI Y
      DESIGN STUDY AND EXPERIMENTAL PERFORMANCE OF A MULTISTAGE ELECTRON COLLECTOR

      Review of scientific instruments
    26. SANO E; HIRAYAMA Y; HORIKOSHI Y
      SELENIUM DOPED HIGH-INDEX GAAS EPILAYERS GROWN BY MOLECULAR-BEAM EPITAXY

      Microelectronics
    27. YONEYAMA M; SANO A; HAGIMOTO K; OTSUJI T; MURATA K; IMAI Y; YAMAGUCHI S; ENOKI T; SANO E
      OPTICAL REPEATER CIRCUIT-DESIGN BASED ON INALAS INGAAS HEMT DIGITAL IC TECHNOLOGY/

      IEEE transactions on microwave theory and techniques
    28. OTSUJI T; YONEYAMA M; MURATA K; SANO E
      A SUPER-DYNAMIC FLIP-FLOP CIRCUIT FOR BROAD-BAND APPLICATIONS UP TO 24 GB S UTILIZING PRODUCTION-LEVEL 0.2-MU-M GAAS-MESFETS/

      IEEE journal of solid-state circuits
    29. OTSUJI T; IMAI Y; SANO E; KIMURA S; YAMAGUCHI S; YONEYAMA M; ENOKI T; UMEDA Y
      40-GB S ICS FOR FUTURE LIGHTWAVE COMMUNICATIONS-SYSTEMS/

      IEEE journal of solid-state circuits
    30. KAZAHARI K; SANO E; MATSUURA N; ONO M
      CHROMATIN STRUCTURE OF THE RAT SOMATOTROPIN GENE LOCUS AND PHYSICAL LINKAGE OF THE RAT SOMATOTROPIN GENE AND SKELETAL-MUSCLE SODIUM-CHANNELGENE

      European journal of biochemistry
    31. SANO E; KURISHIMA K; YAMAHATA S
      20GBIT S REGENERATIVE RECEIVER IC USING INP/INGAAS DOUBLE-HETEROSTRUCTURE BIPOLAR-TRANSISTORS/

      Electronics Letters
    32. SANO E; SANO K; OTSUJI T; KURISHIMA K; YAMAHATA S
      ULTRA-HIGH-SPEED, LOW-POWER MONOLITHIC PHOTORECEIVER USING INP INGAASDOUBLE-HETEROJUNCTION BIPOLAR-TRANSISTORS/

      Electronics Letters
    33. ABE K; KOMATSU S; YANASE N; SANO E; KAWAKUBO T
      FERROELECTRIC PROPERTIES IN HETEROEPITAXIAL BA0.6SR0.4TIO3 THIN-FILMSON SRRUO3 SRTIO3 SUBSTRATES/

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
    34. OTSUJI T; YAITA M; NAGATSUMA T; SANO E
      10-80-GB S HIGHLY EXTINCTIVE ELECTROOPTIC PULSE PATTERN GENERATION/

      IEEE journal of selected topics in quantum electronics
    35. YONEYAMA M; SANO E; YAMAHATA S; MATSUOKA Y
      A 13-GB S PIN-PD/DECISION CIRCUIT USING INP-INGAAS DOUBLE-HETEROJUNCTION BIPOLAR-TRANSISTORS/

      IEEE photonics technology letters
    36. SHIBATA T; KIMURA S; IMAI Y; SANO E
      VERY-BROAD-BAND IC MODULE DESIGN TECHNOLOGY

      NTT review
    37. SANO E; YONEYAMA M; YAMAHATA S; MATSUOKA Y
      INP INGAAS DOUBLE-HETEROJUNCTION BIPOLAR-TRANSISTORS FOR HIGH-SPEED OPTICAL RECEIVERS/

      I.E.E.E. transactions on electron devices
    38. OTSUJI T; YONEYAMA M; IMAI Y; YAMAGUCHI S; ENOKI T; UMEDA Y; SANO E
      46GBIT S MULTIPLEXER AND 40GBIT/S DEMULTIPLEXER IC MODULES USING INALAS/INGAAS/INP HEMTS/

      Electronics Letters
    39. YONEYAMA M; SANO E; YAMAHATA S; MATSUOKA Y; YAITA M
      17GBIT S PIN-PD/DECISION CIRCUIT USING INP/INGAAS DOUBLE-HETEROJUNCTION BIPOLAR-TRANSISTORS/

      Electronics Letters
    40. SANO E; MATSUOKA Y; ISHIBASHI T
      DEVICE FIGURE-OF-MERITS FOR HIGH-SPEED DIGITAL ICS AND BASEBAND AMPLIFIERS

      IEICE transactions on electronics
    41. SANO E; YONEYAMA M
      A MIXED PHOTONIC ELECTRONIC CIRCUIT SIMULATION INCLUDING TRANSIENT NOISE SOURCES/

      IEICE transactions on electronics
    42. MATSUOKA Y; SANO E
      INP INGAAS DOUBLE-HETEROSTRUCTURE BIPOLAR-TRANSISTORS FOR HIGH-SPEED ICS AND OEICS/

      Solid-state electronics
    43. SANO E; MURATA K
      AN ANALYTICAL DELAY EXPRESSION FOR SOURCE-COUPLED FET LOGIC (SCFL) INVERTERS

      I.E.E.E. transactions on electron devices
    44. MURATA K; OTSUJI T; SANO E; OHHATA M; TOGASHI M; SUZUKI M
      A NOVEL HIGH-SPEED LATCHING OPERATION FLIP-FLOP (HLO-FF) CIRCUIT AND ITS APPLICATION TO A 19-GB S DECISION CIRCUIT USING A 0.2-MU-M GAAS-MESFET/

      IEEE journal of solid-state circuits
    45. SANO E; HORIKOSHI Y
      EFFECT OF AS PRESSURE ON SE DELTA-DOPED IN GAAS BY MOLECULAR-BEAM EPITAXY

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
    46. SANO E; YONEYAMA M; NAKAJIMA H; MATSUOKA Y
      A MONOLITHICALLY INTEGRATED PHOTORECEIVER COMPATIBLE WITH INP INGAAS HBT FABRICATION PROCESS

      Journal of lightwave technology
    47. ICHINO H; TOGASHI M; OHHATA M; IMAI Y; ISHIHARA N; SANO E
      OVER-10-GB S ICS FOR FUTURE LIGHTWAVE COMMUNICATIONS/

      Journal of lightwave technology
    48. SANO E; YAMAHATA S; MATSUOKA Y
      40GHZ BANDWIDTH AMPLIFIER IC USING ALGAAS GAAS BALLISTIC COLLECTION TRANSISTORS WITH CARBON-DOPED BASES/

      Electronics Letters
    49. SANO E; YONEYAMA M; YAMAHATA S; MATSUOKA Y
      23 GHZ BANDWIDTH MONOLITHIC PHOTORECEIVER COMPATIBLE WITH INP INGAAS DOUBLE-HETEROJUNCTION BIPOLAR-TRANSISTOR FABRICATION PROCESS/

      Electronics Letters
    50. MATSUOKA Y; YAMAHATA S; YAMAGUCHI S; MURATA K; SANO E; ISHIBASHI T
      IC-ORIENTED SELF-ALIGNED HIGH-PERFORMANCE AIGAAS GAAS BALLISTIC COLLECTION TRANSISTORS AND THEIR APPLICATIONS TO HIGH-SPEED ICS

      IEICE transactions on electronics
    51. IMAI Y; SANO E; NAKAMURA M; ISHIHARA N; KIKUCHI H; ONO T
      DESIGN AND PERFORMANCE OF CLOCK-RECOVERY GAAS ICS FOR HIGH-SPEED OPTICAL COMMUNICATION-SYSTEMS

      IEEE transactions on microwave theory and techniques


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Documento generato il 23/10/20 alle ore 11:00:11