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La ricerca find articoli where authors phrase all words ' SVENSSON BG' sort by level,fasc_key/DESCEND, pagina_ini_num/ASCEND ha restituito 115 riferimenti
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    1. Kuznetsov, AY; Christensen, JS; Monakhov, EV; Lindgren, AC; Radamson, HH; Nylandsted-Larsen, A; Svensson, BG
      Dopant redistribution and formation of electrically active complexes in SiGe

      MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
    2. Hermansson, J; Murin, LI; Hallberg, T; Markevich, VP; Lindstrom, JL; Kleverman, M; Svensson, BG
      Complexes of the self-interstitial with oxygen in irradiated silicon: a new assignment of the 936 cm(-1) band

      PHYSICA B
    3. Thungstrom, G; Dubaric, E; Svensson, BG
      Processing of silicon UV-photodetectors

      NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT
    4. Leveque, P; Christensen, JS; Kuznetsov, AY; Svensson, BG; Larsen, AN
      Influence of boron concentration on the enhanced diffusion observed after irradiation of boron delta-doped silicon at 570 degrees C

      NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS
    5. Leveque, P; Pellegrino, P; Hallen, A; Svensson, BG; Privitera, V
      Hydrogen-related defect centers in float-zone and epitaxial n-type proton implanted silicon

      NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS
    6. Janson, MS; Hallen, A; Linnarsson, MK; Svensson, BG
      Hydrogen diffusion, complex formation, and dissociation in acceptor-doped silicon carbide - art. no. 195202

      PHYSICAL REVIEW B
    7. Pellegrino, P; Leveque, P; Lalita, J; Hallen, A; Jagadish, C; Svensson, BG
      Annealing kinetics of vacancy-related defects in low-dose MeV self-ion-implanted n-type silicon - art. no. 195211

      PHYSICAL REVIEW B
    8. Monakhov, EV; Kuznetsov, AY; Svensson, BG
      Vacancy-related deep levels in n-type Si1-xGex strained layers - art. no. 245322

      PHYSICAL REVIEW B
    9. Mannino, G; Whelan, S; Schroer, E; Privitera, V; Leveque, P; Svensson, BG; Napolitani, E
      An investigation on the modeling of transient enhanced diffusion of ultralow energy implanted boron in silicon

      JOURNAL OF APPLIED PHYSICS
    10. Leveque, P; Kuznetsov, AY; Christensen, JS; Svensson, BG; Larsen, AN
      Irradiation enhanced diffusion of boron in delta-doped silicon

      JOURNAL OF APPLIED PHYSICS
    11. Linnarsson, MK; Janson, MS; Zimmermann, U; Svensson, BG; Persson, POA; Hultman, L; Wong-Leung, J; Karlsson, S; Schoner, A; Bleichner, H; Olsson, E
      Solubility limit and precipitate formation in Al-doped 4H-SiC epitaxial material

      APPLIED PHYSICS LETTERS
    12. Pellegrino, P; Leveque, P; Wong-Leung, J; Jagadish, C; Svensson, BG
      Separation of vacancy and interstitial depth profiles in ion-implanted silicon: Experimental observation

      APPLIED PHYSICS LETTERS
    13. Aberg, D; Hallen, A; Pellegrino, P; Svensson, BG
      Nitrogen deactivation by implantation-induced defects in 4H-SiC epitaxial layers

      APPLIED PHYSICS LETTERS
    14. Kuznetsov, AY; Leveque, P; Hallen, A; Svensson, BG; Larsen, AN
      Self-interstitial migration during ion irradiation of boron delta-doped silicon

      MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
    15. Monakhov, EV; Kuznetsov, AY; Svensson, BG; Larsen, AN
      Thermal donor and antimony energy levels in relaxed Si1-xGex layers

      PHYSICAL REVIEW B
    16. Janson, MS; Hallen, A; Linnarsson, MK; Svensson, BG; Nordell, N; Karlsson, S
      Electric-field-assisted migration and accumulation of hydrogen in silicon carbide

      PHYSICAL REVIEW B
    17. Schmidt, DC; Barbot, JF; Blanchard, C; Godey, S; Ntsoenzok, E; Svensson, BG
      Proximity gettering of platinum in silicon following implantation with alpha particles at low doses

      MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY
    18. Svensson, BG; Petersson, E
      Swarm site fidelity in the sex role-reversed dance fly Empis borealis

      JOURNAL OF INSECT BEHAVIOR
    19. Svensson, B; Lagerlof, J; Svensson, BG
      Habitat preferences of nest-seeking bumble bees (Hymenoptera : Apidae) in an agricultural landscape

      AGRICULTURE ECOSYSTEMS & ENVIRONMENT
    20. Svensson, BG; Tallmark, B; Petersson, E
      Habitat heterogeneity, coexistence and habitat utilization in five backswimmer species (Notonecta spp.; Hemiptera, Notonectidae)

      AQUATIC INSECTS
    21. Larsen, AN; Goubet, JJ; Mejlholm, P; Christensen, JS; Fanciulli, M; Gunnlaugsson, HP; Weyer, G; Petersen, JW; Resende, A; Kaukonen, M; Jones, R; Oberg, S; Briddon, PR; Svensson, BG; Lindstrom, JL; Dannefaer, S
      Tin-vacancy acceptor levels in electron-irradiated n-type silicon

      PHYSICAL REVIEW B
    22. Schmidt, DC; Svensson, BG; Seibt, M; Jagadish, C; Davies, G
      Photoluminescence, deep level transient spectroscopy and transmission electron microscopy measurements on MeV self-ion implanted and annealed n-type silicon

      JOURNAL OF APPLIED PHYSICS
    23. Monakhov, EV; Kuznetsov, AY; Svensson, BG
      Comparative study of divacancy and E-center electronic levels in Si and strained Si0.87Ge0.13 layers

      JOURNAL OF APPLIED PHYSICS
    24. Janson, MS; Linnarsson, MK; Hallen, A; Svensson, BG; Nordell, N; Bleichner, H
      Transient enhanced diffusion of implanted boron in 4H-silicon carbide

      APPLIED PHYSICS LETTERS
    25. Schmidt, DC; Aberg, D; Svensson, BG; Lindstrom, JL; Barbot, JF; Blanchard, C
      The evolution of interstitial-type defects in silicon during platinum diffusion from 400 to 600 degrees C following 2-MeV electron irradiation

      MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY
    26. Linnarsson, MK; Janson, MS; Karlsson, S; Schoner, A; Nordell, N; Svensson, BG
      Diffusion of light elements in 4H-and 6H-SiC

      MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY
    27. Hallen, A; Henry, A; Pellegrino, E; Svensson, BG; Aberg, D
      Ion implantation induced defects in epitaxial 4H-SiC

      MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY
    28. Schmidt, DC; Svensson, BG; Lindstrom, JL; Godey, S; Ntsoenzok, E; Barbot, JF; Blanchard, C
      Enhanced diffusion of platinum in electron-irradiated silicon

      MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY
    29. Lindstrom, JL; Murin, LI; Markevich, VP; Hallberg, T; Svensson, BG
      Vibrational absorption from vacancy-oxygen-related complexes (VO, V2O, VO2) in irradiated silicon

      PHYSICA B
    30. Pellegrino, P; Kuznetsov, AY; Svensson, BG
      Impurity-assisted annealing of point defect complexes in ion-implanted silicon

      PHYSICA B
    31. Aberg, D; Hallen, A; Svensson, BG
      Low-dose ion implanted epitaxial 4H-SiC investigated by deep level transient spectroscopy

      PHYSICA B
    32. Kuznetsov, AY; Radamson, HH; Svensson, BG; Ni, WX; Hansson, GV; Larsen, AN
      Comparison of strain relaxation in Si/SiGe/Si heterostructures after annealing in oxidizing and inert atmospheres

      PHYSICA SCRIPTA
    33. Schmidt, DC; Svensson, BG; Barbot, JF; Blanchard, C
      Study on the evolution and nature of interstitial-type defects following proton and alpha particle implantation during low-dose proximity gettering of platinum

      NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS
    34. Kuznetsov, AY; Janson, M; Hallen, A; Svensson, BG; Larsen, AN
      Boron diffusion in Si and SiC during 2.5 MeV proton irradiation at 500-850degrees C

      NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS
    35. Pellegrino, P; Keskitalo, N; Hallen, A; Svensson, BG
      Reverse annealing effects in heavy ion implanted silicon

      NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS
    36. Schmidt, DC; Svensson, BG; Godey, S; Ntsoenzok, E; Barbot, JF; Blanchard, C
      Residual defects in Cz-silicon after low dose self-implantation and annealing from 400 degrees C to 800 degrees C

      NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS
    37. Schmidt, DC; Svensson, BG; Godey, S; Ntsoenzok, E; Barbot, JF; Blanchard, C
      Low temperature proximity gettering of platinum in proton irradiated silicon via interstitial cluster dissociation

      NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS
    38. Keskitalo, N; Hallen, A; Pellegrino, P; Svensson, BG
      Anomalous field dependence of deep level emission in proton irradiated silicon

      NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS
    39. Lindner, JKN; Svensson, BG; Hemment, PLF; Atwater, HA
      Ion Implantation into Semiconductors, Oxides and Ceramics - Proceedings ofthe E-MRS 1998 Spring Meeting Symposium J on Ion Implantation into Semiconductors, Oxides and Ceramics, Strasbourg, France, 16-19 June 1998 - Preface

      NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS
    40. Linnarsson, MK; Svensson, BG
      Cascade mixing in AlxGa1-xAs/GaAs during sputter profiling by noble-gas ions

      PHYSICAL REVIEW B-CONDENSED MATTER
    41. Kuznetsov, AY; Cardenas, J; Schmidt, DC; Svensson, BG; Hansen, JL; Larsen, AN
      Sb-enhanced diffusion in strained Si1-xGex: Dependence on biaxial compression

      PHYSICAL REVIEW B-CONDENSED MATTER
    42. Joelsson, KB; Hultman, L; Ni, WX; Cardenas, J; Svensson, BG; Olsson, E; Hansson, GV
      Er doping of Si and Si0.88Ge0.12 using Er2O3 and ErF3 evaporation during molecular beam epitaxy - A transmission electron microscopy study

      JOURNAL OF CRYSTAL GROWTH
    43. Mangelinck, D; Cardenas, J; d'Heurle, FM; Svensson, BG; Gas, P
      Solid solubility of As in CoSi2 and redistribution at the CoSi2/Si interface

      JOURNAL OF APPLIED PHYSICS
    44. Hallen, A; Keskitalo, N; Josyula, L; Svensson, BG
      Migration energy for the silicon self-interstitial

      JOURNAL OF APPLIED PHYSICS
    45. Schmidt, DC; Svensson, BG; Lindstrom, JL; Godey, S; Ntsoenzok, E; Barbot, JF; Blanchard, C
      2 MeV electron irradiation of silicon at elevated temperatures: Influence on platinum diffusion and creation of electrically active defects

      JOURNAL OF APPLIED PHYSICS
    46. Fatima, S; Jagadish, C; Lalita, J; Svensson, BG; Hallen, A
      Hydrogen interaction with implantation induced point defects in p-type silicon

      JOURNAL OF APPLIED PHYSICS
    47. Aberg, D; Linnarsson, MK; Svensson, BG; Hallberg, T; Lindstrom, JL
      Ultrashallow thermal donor formation in silicon by annealing in ambient oxygen

      JOURNAL OF APPLIED PHYSICS
    48. Schmidt, DC; Svensson, BG; Barbot, JF; Blanchard, C
      Stability of proximity gettering of platinum in silicon implanted with alpha particles at low doses

      APPLIED PHYSICS LETTERS
    49. Schmidt, DC; Svensson, BG; Godey, S; Ntsoenzok, E; Barbot, JF; Blanchard, C
      The influence of diffusion temperature and ion dose on proximity getteringof platinum in silicon implanted with alpha particles at low doses

      APPLIED PHYSICS LETTERS
    50. DOYLE JP; KUZNETSOV AY; SVENSSON BG
      COPPER DIFFUSION IN AMORPHOUS-GERMANIUM

      Journal of vacuum science & technology. A. Vacuum, surfaces, and films
    51. Achtziger, N; Hulsen, C; Witthuhn, W; Linnarsson, MK; Janson, M; Svensson, BG
      Mobility passivating effect and thermal stability of hydrogen in silicon carbide

      PHYSICA STATUS SOLIDI B-BASIC RESEARCH
    52. Aberg, D; Hallberg, T; Svensson, BG; Lindstrom, JL; Linnarsson, MK
      Ultra-shallow thermal donor formation in oxygen-containing ambient

      PHYSICA STATUS SOLIDI B-BASIC RESEARCH
    53. Kuznetsov, AY; Aberg, D; Svensson, BG
      Shallow donors in silicon crystallized from amorphous phase via a silicidemediated epitaxy

      PHYSICA STATUS SOLIDI B-BASIC RESEARCH
    54. SVENSSON BG; LINNARSSON MK; CARDENAS J; PETRAVIC M
      SIMS ANALYSIS OF EPITAXIAL LAYERS FOR POWER-ELECTRONICS AND MICROELECTRONICS

      Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms
    55. Kuznetsov, AY; Grahn, J; Cardenas, J; Svensson, BG; Hansen, JL; Larsen, AN
      Effect of injection of Si self-interstitials on Sb diffusion in Si/Si1-xGex/Si heterostructures

      PHYSICAL REVIEW B-CONDENSED MATTER
    56. Aberg, D; Svensson, BG; Hallberg, T; Lindstrom, JL
      Kinetic study of oxygen dimer and thermal donor formation in silicon

      PHYSICAL REVIEW B-CONDENSED MATTER
    57. NI WX; HANSSON GV; CARDENAS J; SVENSSON BG
      ROLE OF STRAIN IN DOPANT SURFACE SEGREGATION DURING SI AND SIGE GROWTH BY MOLECULAR-BEAM EPITAXY

      Thin solid films
    58. SCHMIDT DC; SVENSSON BG; KESKITALO N; GODEY S; NTSOENZOK E; BARBOT JF; BLANCHARD C
      PROXIMITY GETTERING OF PLATINUM IN PROTON-IRRADIATED SILICON

      Journal of applied physics
    59. DOYLE JP; LINNARSSON MK; PELLEGRINO P; KESKITALO N; SVENSSON BG; SCHONER A; NORDELL N; LINDSTROM JL
      ELECTRICALLY ACTIVE POINT-DEFECTS IN N-TYPE 4H-SIC

      Journal of applied physics
    60. DOYLE JP; SCHONER A; NORDELL N; GALECKAS A; BLEICHNER H; LINNARSSON MK; LINNROS J; SVENSSON BG
      OBSERVATION OF NEAR-SURFACE ELECTRICALLY ACTIVE DEFECTS IN N-TYPE 6H-SIC

      Journal of applied physics
    61. Cardenas, J; Svensson, BG; Petravic, M
      Evidence for the influence of thermal spikes on ion induced mixing in Si at energies between 3 and 300 keV

      JOURNAL OF APPLIED PHYSICS
    62. Kuznetsov, AY; Svensson, BG; Nur, O; Hultman, L
      Nickel distribution in crystalline and amorphous silicon during solid phase epitaxy of amorphous silicon

      JOURNAL OF APPLIED PHYSICS
    63. CARDENAS J; SVENSSON BG; NI WX; JOELSSON KB; HANSSON GV
      INJECTION OF SELF-INTERSTITIALS DURING SPUTTER DEPTH PROFILING OF SI AT ROOM-TEMPERATURE

      Applied physics letters
    64. DOYLE JP; ABOELFOTOH MO; SVENSSON BG; SCHONER A; NORDELL N
      CHARACTERIZATION OF ELECTRICALLY ACTIVE DEEP-LEVEL DEFECTS IN 4H AND 6H SIC

      DIAMOND AND RELATED MATERIALS
    65. SVENSSON BG
      SWARMING BEHAVIOR, SEXUAL DIMORPHISM, AND FEMALE REPRODUCTIVE STATUS IN THE SEX ROLE-REVERSED DANCE FLY SPECIES RHAMPHOMYIA-MARGINATA

      Journal of insect behavior
    66. HANSSON M; BARREGARD L; SALLSTEN G; SVENSSON BG; RAPPE C
      POLYCHLORINATED DIBENZO-P-DIOXIN AND DIBENZOFURAN LEVELS AND PATTERNSIN POLYVINYLCHLORIDE AND CHLORALKALI INDUSTRY WORKERS

      International archives of occupational and environmental health
    67. LALITA J; SVENSSON BG; JAGADISH C; HALLEN A
      ANNEALING STUDIES OF POINT-DEFECTS IN LOW-DOSE MEV ION-IMPLANTED SILICON

      Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms
    68. KESKITALO N; HALLEN A; JOSYULA L; SVENSSON BG
      IMPROVED LIFETIME CHARACTERISTICS IN HEAVY-ION IRRADIATED SILICON

      Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms
    69. WILLIAMS JS; SHORT KT; PETRAVIC M; SVENSSON BG
      OXIDATION OF SILICON BY LOW-ENERGY OXYGEN IONS

      Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms
    70. MANGELINCK D; CARDENAS J; SVENSSON BG
      ARSENIC SOLUBILITY IN SINGLE-CRYSTALLINE COBALT DISILICIDE

      Microelectronic engineering
    71. SVENSSON BG; JAGADISH C; HALLEN A; LALITA J
      GENERATION OF VACANCY-TYPE POINT-DEFECTS IN SINGLE COLLISION CASCADESDURING SWIFT-ION BOMBARDMENT OF SILICON

      Physical review. B, Condensed matter
    72. WANG Z; RAMANATH G; ALLEN LH; ROCKETT A; DOYLE JP; SVENSSON BG
      KINETICS OF THIN-FILM REACTIONS OF CU A-GE BILAYERS/

      Journal of applied physics
    73. NI WX; JOELSSON KB; DU CX; BUYANOVA IA; POZINA G; CHEN WM; HANSSON GV; MONEMAR B; CARDENAS J; SVENSSON BG
      ER O AND ER/F DOPING DURING MOLECULAR-BEAM EPITAXIAL-GROWTH OF SI LAYERS FOR EFFICIENT 1.54 MU-M LIGHT-EMISSION/

      Applied physics letters
    74. SKARPING G; DALENE M; SVENSSON BG; LITTORIN M; AKESSON B; WELINDER H; SKERFVING S
      BIOMARKERS OF EXPOSURE, ANTIBODIES, AND RESPIRATORY SYMPTOMS IN WORKERS HEATING POLYURETHANE GLUE

      Occupational and environmental medicine
    75. MOHADJERI B; PETRAVIC M; SVENSSON BG
      OXIDATION-ENHANCED ROUGHENING OF THIN CO FILMS DURING SPUTTERING BY O-2(+) IONS

      Journal of vacuum science & technology. A. Vacuum, surfaces, and films
    76. LALITA J; KESKITALO N; HALLEN A; JAGADISH C; SVENSSON BG
      DEFECT EVOLUTION IN MEV ION-IMPLANTED SILICON

      Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms
    77. PETRAVIC M; SVENSSON BG; WILLIAMS JS; GLASKO JM
      SEGREGATION EFFECTS IN SIMS PROFILING OF IMPURITIES IN SILICON BY LOW-ENERGY OXYGEN IONS

      Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms
    78. ZARING C; PISCH A; CARDENAS J; GAS P; SVENSSON BG
      SOLID SOLUBILITY AND DIFFUSION OF BORON IN SINGLE-CRYSTALLINE COBALT DISILICIDE

      Journal of applied physics
    79. DOYLE JP; SVENSSON BG; ABOELFOTOH MO
      COPPER GERMANIDE SCHOTTKY-BARRIER CONTACTS TO SILICON

      Journal of applied physics
    80. CARDENAS J; ZHANG SL; SVENSSON BG; PETERSSON CS
      ON THE FORMATION OF INHOMOGENEITIES IN EPITAXIAL COSI2 LAYERS GROWN FROM THE INTERACTION OF CO TI BILAYERS WITH SI[100] SUBSTRATES/

      Journal of applied physics
    81. BERLIN KJ; EDLING C; PERSSON B; AHLBORG G; HILLERT L; HOGSTEDT B; LUNDBERG I; SVENSSON BG; THIRINGER G; ORBAEK P
      CANCER INCIDENCE AND MORTALITY OF PATIENTS WITH SUSPECTED SOLVENT-RELATED DISORDERS

      Scandinavian journal of work, environment & health
    82. SVENSSON BG; NILSSON A; JONSSON E; SCHUTZ A; AKESSON B; HAGMAR L
      FISH CONSUMPTION AND EXPOSURE TO PERSISTENT ORGANOCHLORINE COMPOUNDS,MERCURY, SELENIUM AND METHYLAMINES AMONG SWEDISH FISHERMEN

      Scandinavian journal of work, environment & health
    83. SVENSSON BG; MIKOCZY Z; STROMBERG U; HAGMAR L
      MORTALITY AND CANCER INCIDENCE AMONG SWEDISH FISHERMEN WITH A HIGH DIETARY-INTAKE OF PERSISTENT ORGANOCHLORINE COMPOUNDS

      Scandinavian journal of work, environment & health
    84. LALITA J; SVENSSON BG; JAGADISH C
      POINT-DEFECTS OBSERVED IN CRYSTALLINE SILICON IMPLANTED BY MEV SI IONS AT ELEVATED-TEMPERATURES

      Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms
    85. KUZNETSOV AY; SVENSSON BG
      TRANSIENT KINETICS IN SOLID-PHASE EPITAXY OF NI DOPED AMORPHOUS-SILICON

      Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms
    86. SVENSSON BG; JAGADISH C; HALLEN A; LALITA J
      POINT-DEFECTS IN MEV ION-IMPLANTED SILICON STUDIED BY DEEP-LEVEL TRANSIENT SPECTROSCOPY

      Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms
    87. LALITA J; JAGADISH C; SVENSSON BG
      SILICON IMPLANTED WITH MEV(12)C IONS - TEMPERATURE-DEPENDENCE OF DEFECT FORMATION AT LOW-DOSES

      Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms
    88. ABOELFOTOH MO; SVENSSON BG
      INTERACTION BETWEEN COPPER AND POINT-DEFECTS IN SILICON IRRADIATED WITH 2-MEV ELECTRONS

      Physical review. B, Condensed matter
    89. HUANG W; AKESSON B; SVENSSON BG; SCHUTZ A; BURK RF; SKERFVING S
      SELENOPROTEIN-P AND GLUTATHIONE-PEROXIDASE (EC-1.11.1.9) IN PLASMA ASINDEXES OF SELENIUM STATUS IN RELATION TO THE INTAKE OF FISH

      British Journal of Nutrition
    90. DOYLE JP; SVENSSON BG; JOHANSSON S
      MORPHOLOGICAL INSTABILITY OF BILAYERS OF COPPER GERMANIDE FILMS AND AMORPHOUS-GERMANIUM

      Applied physics letters
    91. KUZNETSOV AY; SVENSSON BG
      NICKEL ATOMIC DIFFUSION IN AMORPHOUS-SILICON

      Applied physics letters
    92. ZHANG SL; CARDENAS J; DHEURLE FM; SVENSSON BG; PETERSSON CS
      ON THE FORMATION OF EPITAXIAL COSI2 FROM THE REACTION OF SI WITH A COTI BILAYER/

      Applied physics letters
    93. SVENSSON BG; PETERSSON E
      DIURNAL AND SEASONAL-VARIATIONS IN SWARMING AND MATING-BEHAVIOR OF THE DANCE FLY EMPIS-BOREALIS (DIPTERA, EMPIDIDAE)

      Annales zoologici Fennici
    94. MOHADJERI B; SVENSSON BG
      SECONDARY-ION MASS-SPECTROMETRY MEASUREMENTS OF SHALLOW BORON PROFILES IN COBALT, SILICON, AND COBALT DISILICIDE

      Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena
    95. HALLEN A; SVENSSON BG
      DIVACANCY DISTRIBUTIONS IN FAST-ION IRRADIATED SILICON

      Radiation effects and defects in solids
    96. SVENSSON BG; PETERSSON E
      MATE CHOICE TACTICS AND SWARM SIZE - A MODEL AND A TEST IN A DANCE FLY

      Behavioral ecology and sociobiology
    97. SVENSSON BG; HALLBERG T; NILSSON A; SCHUTZ A; HAGMAR L
      PARAMETERS OF IMMUNOLOGICAL COMPETENCE IN SUBJECTS WITH HIGH CONSUMPTION OF FISH CONTAMINATED WITH PERSISTENT ORGANOCHLORINE COMPOUNDS

      International archives of occupational and environmental health
    98. CARDENAS J; HATZIKONSTANTINIDOU S; ZHANG SL; SVENSSON BG; PETERSSON CS
      INTERDIFFUSION AND PHASE-FORMATION DURING THERMAL-PROCESSING OF CO TI/SIT(100) STRUCTURES/

      Physica scripta. T
    99. DOYLE JP; SVENSSON BG; ABOELFOTOH MO; HUDNER J
      AN INVESTIGATION OF THE STABILITY OF COPPER GERMANIDE THIN-FILMS IN THE PRESENCE OF SI AND SIO2

      Physica scripta. T
    100. SVENSSON BG; LINNARSSON MK; MOHADJERI B; PETRAVIC M; WILLIAMS JS
      SIMS AND DEPTH PROFILING OF SEMICONDUCTOR STRUCTURES

      Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms


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Documento generato il 28/10/20 alle ore 10:38:53