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La ricerca find articoli where authors phrase all words ' SHINGUBARA S' sort by level,fasc_key/DESCEND, pagina_ini_num/ASCEND ha restituito 32 riferimenti
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    1. Shingubara, S; Okino, O; Murakami, Y; Sakaue, H; Takahagi, T
      Fabrication of nanohole array on Si using self-organized porous alumina mask

      JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B
    2. Huang, SJ; Tsutsui, G; Sakaue, H; Shingubara, S; Takahagi, T
      Formation of a large-scale Langmuir-Blodgett monolayer of alkanethiol-encapsulated gold particles

      JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B
    3. Sakaue, H; Fujiwara, S; Shingubara, S; Takahagi, T
      Atomic-scale defect control on hydrogen-terminated silicon surface at wafer scale

      APPLIED PHYSICS LETTERS
    4. Yamada, K; Saiki, A; Sakaue, H; Shingubara, S; Takahagi, T
      Study of a dielectric constant due to electronic polarization using a semiempirical molecular orbital method I

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
    5. Takahagi, TA; Sakaue, H; Shingubara, S
      Adsorbed water on a silicon wafer surface exposed to atmosphere

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
    6. Tsutsui, G; Huang, SJ; Sakaue, H; Shingubara, S; Takahagi, T
      Well-size-controlled colloidal gold nanoparticles dispersed in organic solvents

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
    7. Takahagi, T; Tsutsui, G; Huang, S; Sakaue, H; Shingubara, S
      Scanning electron microscope observation of heterogeneous three-dimensional nanoparticle arrays using DNA

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS
    8. Huang, SJ; Tsutsui, G; Sakaue, H; Shingubara, S; Takahagi, T
      Electrical properties of self-organized nanostructures of alkanethiol-encapsulated gold particles

      JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B
    9. Shingubara, S; Kotani, H; Sakaue, H; Nishiyama, F; Takahagi, T
      Correlation between agglomeration of a thin film and reflow filling in a contact hole for sputtered Al films

      JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B
    10. Shingubara, S; Okino, O; Sayama, Y; Sakaue, H; Takahagi, T
      Two-dimensional nanowire array formation on Si substrate using self-organized nanoholes of anodically oxidized aluminum

      SOLID-STATE ELECTRONICS
    11. Huang, S; Tsutsui, G; Sakaue, H; Shingubara, S; Takahagi, T
      Control of interdot space and dot size in a two-dimensional gold nanodot array

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS
    12. Tsutsui, G; Huang, SJ; Sakaue, H; Shingubara, S; Takahagi, T
      Self-organized gold nanodots array on a silicon substrate and its mechanical stability

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS
    13. RADZIMSKI ZJ; POSADOWSKI WM; ROSSNAGEL SM; SHINGUBARA S
      DIRECTIONAL COPPER DEPOSITION USING DC MAGNETRON SELF-SPUTTERING

      Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena
    14. NARAYANAN V; SUKIDI N; HU CM; DIETZ N; BACHMANN KJ; MAHAJAN S; SHINGUBARA S
      GROWTH OF GALLIUM-PHOSPHIDE LAYERS BY CHEMICAL BEAM EPITAXY ON OXIDE PATTERNED (001)SILICON SUBSTRATES

      Materials science & engineering. B, Solid-state materials for advanced technology
    15. Huang, S; Sakaue, H; Shingubara, S; Takahagi, T
      Self-organization of a two-dimensional array of gold nanodots encapsulatedby alkanethiol

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
    16. RADZIMSKI ZJ; HANKINS OE; CUOMO JJ; POSADOWSKI WP; SHINGUBARA S
      OPTICAL-EMISSION SPECTROSCOPY OF HIGH-DENSITY METAL PLASMA FORMED DURING MAGNETRON SPUTTERING

      Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena
    17. FURUKAWA M; SHINGUBARA S; HORIIKE Y
      A MODEL FOR RESOLUTION DEPENDENT ROUGHNESS VALUES MEASURED BY AN OPTICAL PROFILER FOR SPECIFIC SURFACES

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
    18. SAKAUE H; KOJIMA A; OSADA N; SHINGUBARA S; TAKAHAGI T
      HIGHLY SELECTIVE SIO2 ETCHING USING CF4 C2H4

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
    19. SAKAUE H; TAKAHASHI E; TANAKA T; SHINGUBARA S; TAKAHAGI T
      SCANNING-TUNNELING-MICROSCOPY OBSERVATION ON THE ATOMIC STRUCTURES OFSTEP EDGES AND ETCH PITS ON A NH4F-TREATED SI(111) SURFACE

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
    20. ICHIKI T; KIKUCHI T; SANO A; SHINGUBARA S; HORIIKE Y
      GAP-FILLING OF CU EMPLOYING SUSTAINED SELF-SPUTTERING WITH INDUCTIVELY-COUPLED PLASMA IONIZATION

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
    21. SHINGUBARA S; OKINO O; SAYAMA Y; SAKAUE H; TAKAHAGI T
      ORDERED 2-DIMENSIONAL NANOWIRE ARRAY FORMATION USING SELF-ORGANIZED NANOHOLES OF ANODICALLY OXIDIZED ALUMINUM

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
    22. FURUKAWA M; YAMAMOTO Y; IKAKURA H; TANAKA N; HASHIMOTO M; SANO A; SHINGUBARA S
      SURFACE MORPHOLOGIES OF SPUTTER-DEPOSITED ALUMINUM FILMS STUDIED USING A HIGH-RESOLUTION PHASE-MEASURING LASER INTERFEROMETRIC MICROSCOPE

      Applied optics
    23. SAKAUE H; KATSUDA Y; KONAGATA S; SHINGUBARA S; TAKAHAGI T
      ALUMINUM-SELECTIVE CHEMICAL-VAPOR-DEPOSITION INDUCED BY HYDROGEN DESORPTION ON SILICON

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
    24. SUKESAKO H; KAWASAKI T; SAKAUE H; SHINGUBARA S; TAKAHAGI T; HORIIKE Y
      FABRICATION OF A SI NANOMETER COLUMN PN JUNCTION AND IMPLANTED DEFECTEVALUATION BY TRANSMISSION ELECTRON-MICROSCOPY

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
    25. KOBAYASHI Y; CHINZEI Y; ASANOME H; KUROSAKI R; KIKUCHI J; SHINGUBARA S; HORIIKE Y
      HIGH-RATE BIAS SPUTTERING FILLING OF SIO2 FILM EMPLOYING BOTH CONTINUOUS-WAVE AND TIME-MODULATED INDUCTIVELY-COUPLED PLASMAS

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
    26. TAKAHAGI T; SHINGUBARA S; SAKAUE H; HOSHINO K; YASHIMA H
      STUDY ON ADSORPTION BEHAVIOR OF ORGANIC CONTAMINATIONS ON SILICON SURFACE BY GAS-CHROMATOGRAPHY MASS-SPECTROMETRY

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS
    27. SHINGUBARA S; UTSUNOMIYA I; FUJII T
      MOLECULAR-DYNAMICS SIMULATION OF VOID ELECTROMIGRATION UNDER A HIGH-DENSITY ELECTRIC-CURRENT STRESS IN AN ALUMINUM INTERCONNECTION

      Electronics & communications in Japan. Part 2, Electronics
    28. SHINGUBARA S; UTSUNOMIYA I; TAKAHAGI T
      INTERACTION OF A VOID AND A GRAIN-BOUNDARY UNDER A HIGH ELECTRIC-CURRENT STRESS EMPLOYING 3-DIMENSIONAL MOLECULAR-DYNAMICS SIMULATION

      Applied surface science
    29. KUBOTA K; MATSUMOTO H; SHINDO H; SHINGUBARA S; HORIIKE Y
      MEASUREMENT OF FLUOROCARBON RADICALS GENERATED FROM C4F8 H-2 INDUCTIVELY-COUPLED PLASMA - STUDY ON SIO2 SELECTIVE ETCHING KINETICS/

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
    30. SHINGUBARA S; FUJIKI K; SANO A; INOUE K; SAKAUE H; SAITOH M; HORIIKE Y
      RESISTANCE OSCILLATIONS INDUCED BY DIRECT-CURRENT ELECTROMIGRATION

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
    31. SHINGUBARA S; NISHIDA H; SAKAUE H; HORIIKE Y
      ELECTROMIGRATION CHARACTERISTICS OF CU-AL PRECIPITATE IN ALCU INTERCONNECTION

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
    32. SHINGUBARA S; MORIMOTO N; TAKEHIRO S; MATSUI Y; UTSUNOMIYA I; HORIIKE Y; SHINDO H
      VERTICAL AND LATERAL HOLE ALUMINUM FILLING CHARACTERISTICS EMPLOYING ELECTRON-CYCLOTRON-RESONANCE PLASMA SPUTTERING WITH HIGH MAGNETIC-FIELD

      Applied physics letters


ASDD Area Sistemi Dipartimentali e Documentali, Università di Bologna, Catalogo delle riviste ed altri periodici
Documento generato il 28/10/20 alle ore 04:44:19