Catalogo Articoli (Spogli Riviste)

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La ricerca find articoli where authors phrase all words ' Phang, JCH' sort by level,fasc_key/DESCEND, pagina_ini_num/ASCEND ha restituito 41 riferimenti
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    1. Thong, JTL; Sim, KS; Phang, JCH
      Single-image signal-to-noise ratio estimation

      SCANNING
    2. Chin, JM; Phang, JCH; Chan, DSH; Palaniappan, M; Gilfeather, G; Soh, CE
      Single contact optical beam induced currents

      MICROELECTRONICS RELIABILITY
    3. Heiderhoff, R; Palaniappan, M; Phang, JCH; Balk, LJ
      Correlation of scanning thermal microscopy and near-field cathodoluminescence analyses on a blue GaN light emitting device

      MICROELECTRONICS RELIABILITY
    4. Heiderhoff, R; Sergeev, OV; Liu, YY; Phang, JCH; Balk, LJ
      Comparison between standard and near-field cathodoluminescence

      JOURNAL OF CRYSTAL GROWTH
    5. Chan, DSH; Chim, WK; Phang, JCH; Liu, YY; Ng, TH; Xiao, H
      Can physical analysis aid in device characterization?

      JOURNAL OF CRYSTAL GROWTH
    6. Yang, CY; Bettiol, A; Jamieson, D; Hua, X; Phang, JCH; Chan, DSH; Watt, F; Osipowicz, T
      Investigation of light emitting diodes using nuclear microprobes

      NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS
    7. Fiege, GBM; Schade, W; Palaniappan, M; Ng, V; Phang, JCH; Balk, LJ
      Front- and backside investigations of thermal and electronic properties ofsemiconducting devices

      MICROELECTRONICS RELIABILITY
    8. Liu, X; Phang, JCH; Chan, DSH; Chim, WK
      The properties of 2.7 eV cathodoluminescence from SiO2 film on Si substrate (vol 14, pg 1563, 1999)

      JOURNAL OF PHYSICS D-APPLIED PHYSICS
    9. Liu, X; Phang, JCH; Chan, DSH; Chim, WK
      The properties of 2.7 eV cathodoluminescence from SiO2 film on Si substrate

      JOURNAL OF PHYSICS D-APPLIED PHYSICS
    10. OSIPOWICZ T; SANCHEZ JL; ORLIC I; WATT F; KOLACHINA S; CHAN DSH; PHANG JCH
      FLUENCE DEPENDENCE OF IBIC COLLECTION EFFICIENCY OF CMOS TRANSISTORS

      Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms
    11. ONG KH; PHANG JCH; THONG JTL
      A ROBUST FOCUSING AND ASTIGMATISM CORRECTION METHOD FOR THE SCANNING ELECTRON-MICROSCOPE - PART-III - AN IMPROVED TECHNIQUE

      Scanning
    12. ONG KH; PHANG JCH; THONG JTL
      A ROBUST FOCUSING AND ASTIGMATISM CORRECTION METHOD FOR THE SCANNING ELECTRON-MICROSCOPE - PART II - AUTOCORRELATION-BASED COARSE FOCUSING METHOD

      Scanning
    13. KOLACHINA S; PHANG JCH; CHAN DSH
      SINGLE CONTACT ELECTRON-BEAM-INDUCED CURRENTS (SCEBIC) IN SEMICONDUCTOR JUNCTIONS - PART I - QUANTITATIVE VERIFICATION OF SCEBIC MODEL

      Solid-state electronics
    14. WONG WK; THONG JTL; PHANG JCH
      FACTORS GOVERNING THE DISCHARGE OF ELECTROSTATIC MIRROR FORMATIONS INTHE SCANNING ELECTRON-MICROSCOPE

      Review of scientific instruments
    15. FIEGE GBM; FEIGE V; PHANG JCH; MAYWALD M; GORLICH S; BALK LJ
      FAILURE ANALYSIS OF INTEGRATED DEVICES BY SCANNING THERMAL MICROSCOPY(STHM)

      Microelectronics and reliability
    16. YONG YC; THONG JTL; PHANG JCH
      DETERMINATION OF SECONDARY-ELECTRON YIELD FROM INSULATORS DUE TO A LOW-KV ELECTRON-BEAM

      Journal of applied physics
    17. Liu, X; Chan, DSH; Chim, WK; Phang, JCH
      Evaluation of electrical stress effects on SiO2-Si structures using scanning electron microscope cathodoluminescence

      APPLIED PHYSICS LETTERS
    18. OSIPOWICZ T; SANCHEZ JL; ORLIC I; WATT F; KOLACHINA S; ONG VKS; CHAN DSH; PHANG JCH
      RECENT RESULTS IN ION-BEAM-INDUCED CHARGE MICROSCOPY - UNCONNECTED JUNCTION CONTRAST AND AN ASSESSMENT OF SINGLE CONTACT IBIC

      Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms
    19. ONG KH; PHANG JCH; THONG JTL
      A ROBUST FOCUSING AND ASTIGMATISM CORRECTION METHOD FOR THE SCANNING ELECTRON-MICROSCOPE

      Scanning
    20. WONG WK; PHANG JCH; THONG JTL
      A NOVEL METHOD FOR THE DISCHARGE OF ELECTROSTATIC MIRROR FORMATIONS IN THE SCANNING ELECTRON-MICROSCOPE

      Scanning
    21. WONG WK; PHANG JCH; THONG JTL
      ESTIMATION OF THE 2ND CROSSOVER IN INSULATORS USING THE ELECTROSTATICMIRROR IN THE SCANNING ELECTRON-MICROSCOPE

      Applied physics letters
    22. CHAN DSH; PHANG JCH; LAU WS; ONG VKS; SANE V; KOLACHINA S; OSIPOWICZ T; WATT F
      NEW DEVELOPMENTS IN-BEAM INDUCED CURRENT METHODS FOR THE FAILURE ANALYSIS OF VLSI CIRCUITS

      Microelectronic engineering
    23. PEY KL; PHANG JCH; CHAN DSH; LEONG YK
      DESIGN AND CHARACTERIZATION OF A SINGLE-REFLECTION, SOLID-STATE DETECTOR WITH HIGH DISCRIMINATION AGAINST BACKSCATTERED ELECTRONS FOR CATHODOLUMINESCENCE-MICROSCOPY

      Scanning
    24. CHAN DSH; PHANG JCH; CHIM WK; LIU YY; TAO JM
      DESIGN AND PERFORMANCE OF A NEW SPECTROSCOPIC PHOTON-EMISSION MICROSCOPE SYSTEM FOR THE PHYSICAL ANALYSIS OF SEMICONDUCTOR-DEVICES

      Review of scientific instruments
    25. KOLACHINA S; ONG VKS; CHAN DSH; PHANG JCH; OSIPOWICZ T; WATT F
      UNCONNECTED JUNCTION CONTRAST IN ION-BEAM-INDUCED CHARGE MICROSCOPY

      Applied physics letters
    26. PEY KL; CHAN DSH; PHANG JCH
      CATHODOLUMINESCENCE CONTRAST OF LOCALIZED DEFECTS .1. NUMERICAL-MODELFOR SIMULATION

      Scanning microscopy
    27. PEY KL; PHANG JCH; CHAN DSH
      CATHODOLUMINESCENCE CONTRAST OF LOCALIZED DEFECTS .2. DEFECT INVESTIGATION

      Scanning microscopy
    28. SIM KS; PHANG JCH; CHAN DSH
      EFFECT OF MICRO-EXTRACTION FIELD AND PHYSICAL DIMENSIONS ON THE CHARGING DYNAMICS OF INTEGRATED-CIRCUIT PASSIVATION LAYER PROBE-HOLES IN THE ELECTRON-BEAM TESTER

      Microelectronic engineering
    29. WONG WK; PHANG JCH; THONG JTL
      CHARGING CONTROL USING PULSED SCANNING ELECTRON-MICROSCOPY

      Scanning
    30. LAU WS; CHAN DSH; PHANG JCH; CHOW KW; PEY KS; LIM YP; SANE V; CRONQUIST B
      QUANTITATIVE IMAGING OF LOCAL DEFECTS IN VERY THIN SILICON DIOXIDE FILMS AT LOW-BIAS VOLTAGE BY TRUE OXIDE ELECTRON-BEAM-INDUCED CURRENT

      Journal of applied physics
    31. CHAN DSH; ONG VKS; PHANG JCH
      A DIRECT METHOD FOR THE EXTRACTION OF DIFFUSION LENGTH AND SURFACE RECOMBINATION VELOCITY FROM AN EBIC LINE SCAN - PLANAR JUNCTION CONFIGURATION

      I.E.E.E. transactions on electron devices
    32. SIM KS; CHAN DSH; PHANG JCH
      INVESTIGATION OF CAPACITIVE COUPLING VOLTAGE CONTRAST USING A SPECIMEN CHARGING MODEL

      Microelectronic engineering
    33. ONG VKS; PHANG JCH; CHAN DSH
      A DIRECT AND ACCURATE METHOD FOR THE EXTRACTION OF DIFFUSION LENGTH AND SURFACE RECOMBINATION VELOCITY FROM AN EBIC LINE SCAN

      Solid-state electronics
    34. PEY KL; CHIM WK; PHANG JCH; CHAN DSH
      OPTOELECTRONIC MATERIAL ANALYSIS AND DEVICE FAILURE ANALYSIS USING SEM CATHODOLUMINESCENCE

      Microelectronics and reliability
    35. CHIM WK; CHAN DSH; PHANG JCH
      INVESTIGATION OF SOME ASPECTS OF THE LIQUID-CRYSTAL OPTICAL VOLTAGE CONTRAST TECHNIQUE FOR INTEGRATED-CIRCUIT PHYSICAL ANALYSIS

      Microelectronics and reliability
    36. PHANG JCH; SIM KS; CHAN DSH
      CHARGING DYNAMICS OF INTEGRATED-CIRCUIT PASSIVATION LAYER PROBE HOLESIN THE ELECTRON-BEAM TESTER

      Applied physics letters
    37. PEY KL; PHANG JCH; CHAN DSH
      INVESTIGATION OF DISLOCATIONS IN GAAS USING CATHODOLUMINESCENCE IN THE SCANNING ELECTRON-MICROSCOPE

      Scanning microscopy
    38. CHAN DSH; SIM KS; PHANG JCH
      A SIMULATION-MODEL FOR ELECTRON-IRRADIATION-INDUCED SPECIMEN CHARGINGIN A SCANNING ELECTRON-MICROSCOPE

      Scanning microscopy
    39. CHIM WK; CHAN DSH; PHANG JCH; LOW TS; THIRUMALAI S
      AN ENERGY-DEPENDENT MODEL FOR TYPE-I MAGNETIC CONTRAST IN THE SCANNING ELECTRON-MICROSCOPE

      Scanning microscopy
    40. CHAN DSH; PEY KL; PHANG JCH
      SEMICONDUCTOR PARAMETERS EXTRACTION USING CATHODOLUMINESCENCE IN THE SCANNING ELECTRON-MICROSCOPE

      I.E.E.E. transactions on electron devices
    41. LAU WS; CHAN DSH; PHANG JCH; CHOW KW; PEY KS; LIM YP; CRONQUIST B
      TRUE OXIDE ELECTRON-BEAM-INDUCED CURRENT FOR LOW-VOLTAGE IMAGING OF LOCAL DEFECTS IN VERY THIN SILICON DIOXIDE FILMS

      Applied physics letters


ASDD Area Sistemi Dipartimentali e Documentali, Università di Bologna, Catalogo delle riviste ed altri periodici
Documento generato il 05/06/20 alle ore 00:10:38