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La ricerca find articoli where authors phrase all words ' PYUN KE' sort by level,fasc_key/DESCEND, pagina_ini_num/ASCEND ha restituito 61 riferimenti
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    1. Kim, HM; Kim, DC; Kim, JS; Kim, JH; Pyun, KE; Kang, SG; Choo, HR; Yoo, KH
      Design and fabrication of an 8-channel InP arrayed waveguide grating demultiplexer module with wide tuning range

      JOURNAL OF THE KOREAN PHYSICAL SOCIETY
    2. Shin, M; Lim, J; Kim, J; Kim, JS; Pyun, KE; Hong, S
      Optical binary-phase-shift-keying modulation of 10 GHz using an integratedhybrid device

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
    3. Lim, J; Shin, M; Kim, J; Kim, JS; Pyun, KE; Hong, SC
      Velocity-mismatching effect on extinction characteristics of traveling wave electroabsorption modulator

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
    4. Kim, DC; Kim, HM; Kim, JS; Choo, HR; Kim, J; Pyun, KE; Yoo, KH
      Fabrication of InP-based reflection type arrayed waveguide grating with metal coated reflection facet

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS
    5. Yun, I; Carastro, LA; Poddar, R; Brooke, MA; May, GS; Hyun, KS; Pyun, KE
      Extraction of passive device model parameters using genetic algorithms

      ETRI JOURNAL
    6. Shin, M; Lim, J; Park, CY; Kim, J; Kim, JS; Pyun, KE; Hong, S
      An integrated hybrid device for binary-phase-shift-keying subcarrier modulation

      IEEE PHOTONICS TECHNOLOGY LETTERS
    7. Lee, JK; Park, KH; Jang, DH; Cho, HS; Nam, ES; Pyun, KE; Jeong, J
      Improvement of kink and beam steering characteristics of 0.98-mu m GaInAs-GaInP high-power lasers utilizing channel ion implantation

      IEEE PHOTONICS TECHNOLOGY LETTERS
    8. Nam, ES; Lee, SW; Jang, DH; Lee, JG; Pyun, KE
      Monolithic integration of a 1.55-mu m strained multiple-quantum-well distributed feedback laser and quantum-confined Stark-effect modulator by metal organic vapor-phase epitaxy using an InP-buffer-layer incorporated Butt coupling scheme

      JOURNAL OF THE KOREAN PHYSICAL SOCIETY
    9. Shin, M; Lim, J; Kim, J; Park, CY; Kim, JS; Pyun, KE; Hong, S
      Optical BPSK subcarrier modulation using integrated hybrid device

      ELECTRONICS LETTERS
    10. Oh, DK; Kim, MG; Kim, HS; Hwang, N; Lee, HT; Pyun, KE; Park, CD
      Fabrication and characterization of complex-coupled MQW-DFB laser with an InGaAs absorptive grating

      JOURNAL OF THE KOREAN PHYSICAL SOCIETY
    11. Oh, DK; Pyun, KE; Kim, HS; Choi, IH
      Determination of empirical relationship between vapor and solid phase composition of GaInAsP in MOVPE

      JOURNAL OF THE KOREAN PHYSICAL SOCIETY
    12. Mun, JK; Kim, CH; Lee, JJ; Pyun, KE
      Failure analysis for RF characteristics of GaAs MESFETs

      MICROELECTRONICS AND RELIABILITY
    13. LEE JK; PARK KH; JANG DH; CHO HS; PARK CS; PYUN KE; JEONG J
      IMPROVEMENT OF CATASTROPHIC OPTICAL-DAMAGE (COD) LEVEL FOR HIGH-POWER0.98-MU-M GAINAS-GAINP LASER-DIODES USING IMPURITY-INDUCED LAYER DISORDERING

      IEEE photonics technology letters
    14. CHOO HR; O BH; PARK CD; KIM HM; KIM JS; OH DK; KIM HM; PYUN KE
      IMPROVEMENT OF LINEWIDTH ENHANCEMENT FACTOR IN 1.55-MU-M MULTIPLE-QUANTUM-WELL LASER-DIODES

      IEEE photonics technology letters
    15. Youn, KJ; Mun, JK; Kim, MG; Oh, EK; Lee, CS; Lee, JJ; Pyun, KE; Park, HM
      A 3.0 V front-end GaAs receiver MMIC for the CDMA/AMPS dual mode cellular phones

      JOURNAL OF THE KOREAN PHYSICAL SOCIETY
    16. Kim, MG; Mun, JK; Lee, JJ; Pyun, KE; Yang, JW; Lee, CS
      A 3 V GaAs MESFET monolithic transmitter for digital/analog dual-mode hand-held phones

      JOURNAL OF THE KOREAN PHYSICAL SOCIETY
    17. Oh, KR; Lee, SM; Kim, KH; Kim, JH; Kim, JS; Oh, DK; Kim, HM; Pyun, KE
      Insertion-loss-free InGaAsP/InP LD-gate optical switch arrays

      JOURNAL OF THE KOREAN PHYSICAL SOCIETY
    18. Kim, MG; Lee, SW; Park, SS; Oh, DK; Lee, HT; Kim, HM; Pyun, KE
      High speed gain coupled DFB laser diode integrated with MQW electroabsorption modulator

      JOURNAL OF THE KOREAN PHYSICAL SOCIETY
    19. PARK KH; LEE JK; HAN JH; CHO HS; JANG DH; PARK CS; PYUN KE; JEONG J
      THE EFFECTS OF EXTERNAL OPTICAL FEEDBACK ON THE POWER PENALTY OF DFB-LD MODULES FOR 2.5 GB S(-1) OPTICAL-TRANSMISSION SYSTEMS

      Optical and quantum electronics
    20. MUN JK; LEE JL; KIM H; LEE BT; LEE JJ; PYUN KE
      DEGRADATION MECHANISM OF GAAS-MESFETS

      Microelectronics and reliability
    21. KIM CH; YOON KS; YANG JW; LEE JH; PARK CS; LEE JJ; PYUN KE
      A NEW EXTRACTION METHOD TO DETERMINE BIAS DEPENDENT SOURCE SERIES RESISTANCE IN GAAS-FETS

      IEEE transactions on microwave theory and techniques
    22. PARK KH; LEE JK; JANG DH; CHO HS; PARK CS; PYUN KE
      KINK AND BEAM-STEERING FREE 0.98-MU-M HIGH-POWER RWG LASERS WITH PARTIALLY ION-IMPLANTED CHANNELS

      Electronics Letters
    23. PARK KS; OH DK; KIM HM; PYUN KE
      COMPACT PHOTONIC INTEGRATED-CIRCUIT CHIP WITH LOW CROSSTALK FOR BIDIRECTIONAL TRANSCEIVERS

      Electronics Letters
    24. PARK KH; LEE JK; JANG DH; CHO HS; PARK CS; PYUN KE; JEONG JY; NAHM S; JEONG J
      CHARACTERIZATION OF CATASTROPHIC OPTICAL-DAMAGE IN AL-FREE INGAAS INGAP 0.98 MU-M HIGH-POWER LASERS/

      Applied physics letters
    25. PARK CY; KIM DB; LEE SW; KIM JS; OH KR; KIM HM; YOON TH; PYUN KE
      SIDELOBE-SUPPRESSION OF GRATING-ASSISTED CODIRECTIONAL COUPLER FILTERBY SELECTIVE-AREA GROWTH

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS
    26. LEE SM; KIM KH; OH KR; KIM JS; OH DK; KIM HM; PYUN KE
      COMPARISON OF FE-DOPED AND P N/P-DOPED INP AS A CURRENT BLOCKING LAYER FOR MONOLITHICALLY INTEGRATED INGAASP/INP LASER-DIODES WITH PASSIVE WAVE-GUIDES/

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS
    27. KIM JS; JANG YJ; PARK CY; CHOO HR; KIM HM; PYUN KE
      INVESTIGATION OF THE SUBSTRATE-PATTERNING EFFECT ON MORPHOLOGICAL INSTABILITY IN SELECTIVE-AREA GROWTH

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS
    28. MAENG SJ; LEE CS; YOUN KJ; KIM H; MUN JK; LEE JJ; PYUN KE
      A LOW DISTORTION AND LOW DISSIPATION POWER-AMPLIFIER WITH GATE BIAS CONTROL-CIRCUIT FOR DIGITAL ANALOG DUAL-MODE CELLULAR PHONES/

      ETRI journal
    29. O BH; CHOO HR; KIM HM; KIM JS; OH DK; KIM HR; KIM HM; PYUN KE
      CAVITY LENGTH DEPENDENCE OF HIGH-SPEED 1.55-MU-M MULTIPLE-QUANTUM-WELL LASER-DIODE CHARACTERISTICS

      IEEE photonics technology letters
    30. PARK C; KIM JS; OH DK; JANG DH; PARK CY; AHN JH; KIM HM; CHOO HR; KIM H; PYUN KE
      LOW-THRESHOLD LOSS-COUPLED LASER-DIODE BY NEW GRATING FABRICATION TECHNIQUE

      IEEE photonics technology letters
    31. LEE HG; KIM SG; ROH DW; LEE JJ; PYUN KE
      V-SHAPED DEFECTS IN INXGA1-XAS IN0.52AL0.48AS/INP PSEUDOMORPHIC HIGH-ELECTRON-MOBILITY TRANSISTOR STRUCTURE/

      Materials science & engineering. B, Solid-state materials for advanced technology
    32. PARK MP; LEE TW; KIM IH; PARK SH; PYUN KE
      DETERMINATION OF ALGAAS GAAS HBTS EMITTER-BASE JUNCTION BARRIER HEIGHT BY A MODIFIED PLOT OF THE THERMIONIC EMISSION EQUATION/

      Journal of the Korean Physical Society
    33. LEE SM; RYUM BR; HAN TH; CHO DH; KIM B; PYUN KE
      ATMOSPHERIC-PRESSURE CVD-GROWN SIGE EPITAXIAL BASE HETEROJUNCTION BIPOLAR-TRANSISTOR USING A TISI2 BASE ELECTRODE

      Journal of the Korean Physical Society
    34. NAM E; LEE SW; OH DG; PARK CY; KIM HM; PYUN KE
      ELECTRIC-FIELD DEPENDENCE OF OPTICAL-ABSORPTION IN THE 1.55-MU-M BURIED HETEROSTRUCTURE INGAASP INGAASP MULTIPLE-QUANTUM-WELL WAVE-GUIDE ELECTROABSORPTION MODULATOR VIA REGROWTH OF SEMIINSULATING INP AROUND VERTICAL MESAS FABRICATED BY REACTIVE ION ETCHING/

      Journal of the Korean Physical Society
    35. OH DK; PARK C; NAM E; KIM JS; CHOO HR; KIM HM; PYUN KE
      SEMIINSULATING FE DOPED INGAAS FOR COMPLEX COUPLED DISTRIBUTED-FEEDBACK LASER-DIODE GROWN BY LP-MOVPE

      Journal of the Korean Physical Society
    36. PARK BS; LEE JH; YOON HS; YANG JW; PARK CS; PYUN KE; KIM IK
      0.20-MU-M PSEUDOMORPHIC HEMT-DEVICE FABRICATED BY PSM AND SELF-ALIGNED HEAD T-SHAPED GATE-TECHNIQUES

      Journal of the Korean Physical Society
    37. HWANG N; CHO HS; SONG MK; KIM HM; PYUN KE
      RELIABILITY TEST AND FAILURE ANALYSIS OF 1.3-MU-M INGAASP INP UNCOOLED LASER-DIODES/

      Journal of the Korean Physical Society
    38. PARK SS; SONG MK; HWANG N; KANG SG; LEE HT; CHOO HR; KIM HM; PYUN KE
      20-GHZ BANDWIDTH 1.55-MU-M DISTRIBUTED-FEEDBACK LASER-DIODE MODULES

      Journal of the Korean Physical Society
    39. PARK BS; LEE JH; YOON HS; PARK CS; PYUN KE; KIM IK
      A NEW OPTICAL LITHOGRAPHIC TECHNIQUE USING PHASE-SHIFTING MASK WITH CONCURRENT DEVELOPMENT AND PLANARIZATION FOR THE FORMATION OF 0.15-MU-MT-SHAPED GATE

      Journal of the Korean Physical Society
    40. KIM JS; PARK C; NAHM S; CHOO HR; KIM HM; PYUN KE
      EFFECTS OF HEAT-UP PROCEDURE AND GRATING DEPTH ON THE EROSION OF INGAAS GRATING

      Journal of crystal growth
    41. LEE HG; HONG SK; KIM SG; LEE KS; KIM HM; LEE JJ; PYUN KE; PARK HM
      MOLECULAR-BEAM EPITAXY GROWTH OF INP-BASED LATTICE-MATCHED HIGH-ELECTRON-MOBILITY TRANSISTOR STRUCTURES HAVING A MODIFIED QUANTUM-WELL PROFILE DUE TO ALXGAYIN1-X-YAS (X-8) BUFFER LAYER(Y=0.47)

      Journal of crystal growth
    42. KIM HR; KIM JS; KIM HM; CHOO HR; KIM HM; PYUN KE
      THE EFFECT OF STRAIN ON THE DIELECTRIC-CONSTANTS OF STRAINED IN0.7GA0.3ASYP1-Y FILMS

      Journal of applied physics
    43. PARK CY; KIM DB; YOON TH; KIM JS; OH KR; LEE SW; LEE SM; AHN JH; KIM HM; PYUN KE
      FABRICATION OF WAVELENGTH-TUNABLE INGAASP INP GRATING-ASSISTED CODIRECTIONAL COUPLER FILTER WITH VERY NARROW BANDWIDTH/

      Electronics Letters
    44. CHO HS; PARK KH; LEE JK; JANG DH; KIM JS; PARK KS; PARK CS; PYUN KE
      UNBALANCED FACET OUTPUT POWER AND LARGE SPOT SIZE IN 1.3-MU-M TAPEREDACTIVE STRIPE LASERS

      Electronics Letters
    45. JANG DH; LEE JK; PARK KH; CHO HS; SEONG TY; PARK CS; PYUN KE
      EFFECTS OF IMPLANTED MATERIALS ON IMPURITY-INDUCED LAYER DISORDERING IN STRAINED GA0.8IN0.2AS GAXIN1-XASYP1-Y/GA0.51IN0.49P/GAAS QUANTUM-WELL STRUCTURE/

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS
    46. LEE JH; YOON HS; PARK BS; PARK CS; CHOI SS; PYUN KE
      PSEUDOMORPHIC ALGAAS INGAAS/GAAS HIGH-ELECTRON-MOBILITY TRANSISTORS WITH SUPER LOW-NOISE PERFORMANCES OF 0.41 DB AT 18 GHZ/

      ETRI journal
    47. SONG MK; KANG SG; HWANG N; LEE HT; PARK SS; PYUN KE
      LASER WELDABILITY ANALYSIS OF HIGH-SPEED OPTICAL-TRANSMISSION DEVICE PACKAGING

      IEEE transactions on components, packaging, and manufacturing technology. Part B, Advanced packaging
    48. AHN JH; OH KR; KIM JS; LEE SW; KIM HM; PYUN KE; PARK HM
      UNIFORM AND HIGH COUPLING EFFICIENCY BETWEEN INGAASP-INP BURIED HETEROSTRUCTURE OPTICAL AMPLIFIER AND MONOLITHICALLY BUTT-COUPLED WAVE-GUIDE USING REACTIVE ION ETCHING

      IEEE photonics technology letters
    49. O B; CHOO HR; KIM HM; KIM JS; OH DK; PARK JD; PARK CY; KIM HR; KIM HM; PYUN KE
      GAIN AND LINEWIDTH ENHANCEMENT FACTOR OF DISTRIBUTED-FEEDBACK AND FABRY-PEROT-TYPE 1.55-MU-M MULTIPLE-QUANTUM-WELL LASER-DIODES BY THE MEASUREMENT OF SPONTANEOUS EMISSION-SPECTRUM FROM THE SIDE WALL

      Journal of the Korean Physical Society
    50. JEONG JO; LEE HY; LEE TW; PARK MP; PARK SH; PYUN KE
      ANALYSIS OF THE DEVICE-SIZE DEPENDENCE OF THE CURRENT GAIN IN GAINP GAAS HBTS/

      Journal of the Korean Physical Society
    51. YOON HS; LEE JH; CHOI SS; PARK CS; PYUN KE; PARK HM
      FABRICATION AND CHARACTERISTICS OF 0.2-MU-M AL0.24GA0.76AS IN0.15GA0.85AS/GAAS PSEUDOMORPHIC HEMTS WITH WIDE-HEAD T-SHAPED MULTIFINGER GATES/

      Journal of the Korean Physical Society
    52. OH DK; SUH KS; CHOO H; KIM HM; PYUN KE; PARK HM; NAHM S
      LP-MOCVD GROWN (INAS)(M)(GAAS)(M) SHORT-PERIOD SUPERLATTICES ON INP

      Journal of electronic materials
    53. LU W; LEE JH; YOON HS; PARK CS; PYUN KE; LEE HG; SUH KS; JOGAI B
      ROOM-TEMPERATURE PHOTOLUMINESCENCE STUDIES OF DELTA-DOPED PSEUDOMORPHIC HIGH-ELECTRON-MOBILITY TRANSISTOR ALGAAS INGAAS/GAAS STRUCTURES/

      Solid state communications
    54. HONG SK; LEE HG; LEE JJ; KIM SG; PYUN KE; PARK HM
      MOLECULAR-BEAM EPITAXY GROWTH OF INDIUM-RICH INXGA1-XAS INYAL1-YAS/INP STRUCTURES TOWARDS HIGH CHANNEL CONDUCTIVITY FOR A HIGH-ELECTRON-MOBILITY TRANSISTOR USING A LINEARLY GRADED BUFFER LAYER/

      Journal of crystal growth
    55. KWAK JS; KIM HN; BAIK HK; LEE JL; SHIN DW; PARK CG; KIM H; PYUN KE
      MICROSTRUCTURAL AND ELECTRICAL INVESTIGATIONS OF PD GE/TI/AU OHMIC CONTACT TO N-TYPE GAAS/

      Journal of applied physics
    56. PARK BS; LEE JH; YOON HS; YANG JW; PARK CS; PYUN KE
      0.15 MU-M T-SHAPED GATE PSEUDOMORPHIC HEMT FABRICATED USING A NEW OPTICAL LITHOGRAPHIC TECHNIQUE

      Electronics Letters
    57. YOUN KJ; KIM B; LEE CS; MAENG SJ; LEE JJ; PYUN KE; PARK HM
      LOW DISSIPATION POWER AND HIGH LINEARITY PCS POWER-AMPLIFIER WITH ADAPTIVE GATE BIAS CONTROL-CIRCUIT

      Electronics Letters
    58. OH KR; AHN JH; KIM JS; LEE SW; KIM HM; PYUN KE; PARK HM
      2X2 INGAASP INP LASER-AMPLIFIER GATE SWITCH ARRAYS USING REACTIVE IONETCHING/

      Electronics Letters
    59. OH DK; PARK C; CHOO H; KIM HM; PYUN KE; PARK HM
      GROWTH AND CHARACTERIZATION OF IRON-DOPED SEMIINSULATING INP

      Journal of the Korean Physical Society
    60. KIM JS; LEE SW; KIM HM; OH DK; CHOO HR; JANG DH; KIM HM; PYUN KE; PARK HM
      THE CONTRACTION OF LATTICE-CONSTANT AND THE REDUCTION OF GROWTH-RATE IN P-INGAAS GROWN BY ORGANOMETALLIC VAPOR-PHASE EPITAXY

      Journal of electronic materials
    61. LEE JL; MUN JK; KIM H; LEE HG; PYUN KE; PARK HM
      HIGH-LOW DOPED POWER MESFET WITH 32.0DBM OUTPUT POWER FOR 3.0V DIGITAL ANALOGUE DUAL-MODE HAND-HELD TELEPHONES/

      Electronics Letters


ASDD Area Sistemi Dipartimentali e Documentali, Università di Bologna, Catalogo delle riviste ed altri periodici
Documento generato il 31/05/20 alle ore 10:36:27