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1. Pichon, L; Mourgues, K; Raoult, F; Mohammed-Brahim, T; Kis-Sion, K; Briand, D; Bonnaud, O
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   L. Pichon et al., "Thin film transistors fabricated by in situ doped unhydrogenated polysilicon films obtained by solid phase crystallization", SEMIC SCI T, 16(11), 2001, pp. 918-924
2. Helen, Y; Dassow, R; Nerding, M; Mourgues, K; Raoult, F; Kohler, JR; Mohammed-Brahim, T; Rogel, R; Bonnaud, O; Werner, JH; Strunk, HP
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   Y. Helen et al., "High mobility thin film transistors by Nd : YVO4-laser crystallization", THIN SOL FI, 383(1-2), 2001, pp. 143-146
3. Toutah, H; Tala-Ighil, B; Llibre, JF; Rahal, A; Mourgues, K; Helen, Y; Brahim, TM; Dassow, R; Kohler, JR
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   H. Toutah et al., "Stability of unhydrogenated polysilicon thin film transistors and structural quality of the channel material", THIN SOL FI, 383(1-2), 2001, pp. 299-302
4. Mercha, A; Pichon, L; Carin, R; Mourgues, K; Bonnaud, O
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   A. Mercha et al., "Grain boundary trap passivation in polysilicon thin film transistor investigated by low frequency noise", THIN SOL FI, 383(1-2), 2001, pp. 303-306
5. Dassow, R; Kohler, JR; Helen, Y; Mourgues, K; Bonnaud, O; Mohammed-Brahim, T; Werner, JH
   Laser crystallization of silicon for high-performance thin-film transistors
   SEMICONDUCTOR SCIENCE AND TECHNOLOGY
   
   R. Dassow et al., "Laser crystallization of silicon for high-performance thin-film transistors", SEMIC SCI T, 15(10), 2000, pp. L31-L34
6. Toutah, H; Llibre, JF; Tala-Ighil, B; Mohammed-Brahim, T; Mourgues, K; Helen, Y; Raoult, F; Bonnaud, O
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   MICROELECTRONICS RELIABILITY
   
   H. Toutah et al., "Stability of polysilicon thin film transistors under switch operating", MICROEL REL, 40(8-10), 2000, pp. 1573-1577
7. Mourgues, K; Rahal, A; Mohammed-Brahim, T; Sarret, M; Kleider, JP; Longeaud, C; Bachrouri, A; Romano-Rodriguez, A
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   K. Mourgues et al., "Density of states in the channel material of low temperature polycrystalline silicon thin film transistors", J NON-CRYST, 266, 2000, pp. 1279-1283
8. Tala-Ighil, B; Rahal, A; Mourgues, K; Toutah, A; Pichon, L; Mohammed-Brahim, T; Raoult, F; Bonnaud, O
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   B. Tala-Ighil et al., "State creation induced by gate bias stress in unhydrogenated polysilicon TFTs", THIN SOL FI, 337(1-2), 1999, pp. 101-104
9. Helen, Y; Mourgues, K; Raoult, F; Mohammed-Brahim, T; Bonnaud, O; Rogel, R; Prochasson, S; Boher, P; Zahorski, D
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   Y. Helen et al., "Single shot excimer laser crystallization and LPCVD silicon TFTs", THIN SOL FI, 337(1-2), 1999, pp. 133-136
10. TALAIGHIL B; TOUTAH H; RAHAL A; MOURGUES K; PICHON L; RAOULT F; BONNAUD O; MOHAMMEDBRAHIM T
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11. PICHON L; RAOULT F; MOURGUES K; KISSION K; MOHAMMEDBRAHIM T; BONNAUD O
    LOW-TEMPERATURE (LESS-THAN-OR-EQUAL-TO-600 DEGREES-C) UNHYDROGENATED IN-SITU DOPED POLYSILICON THIN-FILM TRANSISTORS - TOWARDS A TECHNOLOGYFOR FLAT-PANEL DISPLAYS
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