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La ricerca find articoli where authors phrase all words ' Mohammed-Brahim, T' sort by level,fasc_key/DESCEND, pagina_ini_num/ASCEND ha restituito 16 riferimenti
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    1. Pichon, L; Mourgues, K; Raoult, F; Mohammed-Brahim, T; Kis-Sion, K; Briand, D; Bonnaud, O
      Thin film transistors fabricated by in situ doped unhydrogenated polysilicon films obtained by solid phase crystallization

      SEMICONDUCTOR SCIENCE AND TECHNOLOGY
    2. Brenot, R; Vanderhaghen, R; Drevillon, B; Cabarrocas, PRI; Rogel, R; Mohammed-Brahim, T
      Transport mechanisms in hydrogenated microcrystalline silicon

      THIN SOLID FILMS
    3. Helen, Y; Dassow, R; Nerding, M; Mourgues, K; Raoult, F; Kohler, JR; Mohammed-Brahim, T; Rogel, R; Bonnaud, O; Werner, JH; Strunk, HP
      High mobility thin film transistors by Nd : YVO4-laser crystallization

      THIN SOLID FILMS
    4. Toutah, H; Llibre, JF; Tala-Ighil, B; Mohammed-Brahim, T; Helen, Y; Gautier, G; Bonnaud, O
      Improved stability of large area excimer laser crystallised polysilicon thin film transistors under DC and AC operating

      MICROELECTRONICS RELIABILITY
    5. Dassow, R; Kohler, JR; Helen, Y; Mourgues, K; Bonnaud, O; Mohammed-Brahim, T; Werner, JH
      Laser crystallization of silicon for high-performance thin-film transistors

      SEMICONDUCTOR SCIENCE AND TECHNOLOGY
    6. Toutah, H; Llibre, JF; Tala-Ighil, B; Mohammed-Brahim, T; Mourgues, K; Helen, Y; Raoult, F; Bonnaud, O
      Stability of polysilicon thin film transistors under switch operating

      MICROELECTRONICS RELIABILITY
    7. Mourgues, K; Rahal, A; Mohammed-Brahim, T; Sarret, M; Kleider, JP; Longeaud, C; Bachrouri, A; Romano-Rodriguez, A
      Density of states in the channel material of low temperature polycrystalline silicon thin film transistors

      JOURNAL OF NON-CRYSTALLINE SOLIDS
    8. Rogel, R; Sarret, M; Mohammed-Brahim, T; Bonnaud, O; Kleider, JP
      High quality unhydrogenated low-pressure chemical vapor deposited polycrystalline silicon

      JOURNAL OF NON-CRYSTALLINE SOLIDS
    9. Smail, T; Aoucher, M; Mohammed-Brahim, T
      Numerical simulation of low-field thermally stimulated conductivity in a-Si : H

      JOURNAL OF NON-CRYSTALLINE SOLIDS
    10. Pichon, L; Mercha, A; Carin, R; Bonnaud, O; Mohammed-Brahim, T; Helen, Y; Rogel, R
      Analysis of the activation energy of the subthreshold current in laser- and solid-phase-crystallized polycrystalline silicon thin-film transistors

      APPLIED PHYSICS LETTERS
    11. Kechouane, M; Beldi, N; Mouheb, O; Mohammed-Brahim, T; Barriere, AS; L'Haridon, H; Gauneau, M
      Erbium-doped hydrogenated amorphous silicon prepared by dc sputtering

      PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICSELECTRONIC OPTICAL AND MAGNETIC PROPERTIES
    12. Briand, D; Sarret, M; Kis-Sion, K; Mohammed-Brahim, T; Duverneuil, P
      In situ doping of silicon deposited by LPCVD: pressure influence on dopantincorporation mechanisms

      SEMICONDUCTOR SCIENCE AND TECHNOLOGY
    13. Brenot, R; Vanderhaghen, R; Drevillon, B; Mohammed-Brahim, T; Cabarrocas, PR
      Contactless electronic transport analysis of microcrystalline silicon

      THIN SOLID FILMS
    14. Tala-Ighil, B; Rahal, A; Mourgues, K; Toutah, A; Pichon, L; Mohammed-Brahim, T; Raoult, F; Bonnaud, O
      State creation induced by gate bias stress in unhydrogenated polysilicon TFTs

      THIN SOLID FILMS
    15. Helen, Y; Mourgues, K; Raoult, F; Mohammed-Brahim, T; Bonnaud, O; Rogel, R; Prochasson, S; Boher, P; Zahorski, D
      Single shot excimer laser crystallization and LPCVD silicon TFTs

      THIN SOLID FILMS
    16. Rahal, A; Mohammed-Brahim, T; Toutah, H; Tala-Ighil, B; Helen, Y; Prat, C; Raoult, F
      Ageing of laser crystallized and unhydrogenated polysilicon thin film transistors

      MICROELECTRONICS RELIABILITY


ASDD Area Sistemi Dipartimentali e Documentali, Università di Bologna, Catalogo delle riviste ed altri periodici
Documento generato il 24/01/21 alle ore 08:08:23