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La ricerca find articoli where authors phrase all words ' MONECKE J' sort by level,fasc_key/DESCEND, pagina_ini_num/ASCEND ha restituito 38 riferimenti
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    1. Sarua, A; Monecke, J; Irmer, G; Tiginyanu, IM; Gartner, G; Hartnagel, HL
      Frohlich modes in porous III-V semiconductors

      JOURNAL OF PHYSICS-CONDENSED MATTER
    2. Monecke, T; Gemmell, JB; Monecke, J
      Fractal distributions of veins in drill core from the Hellyer VHMS deposit, Australia: constraints on the origin and evolution of the mineralising system

      MINERALIUM DEPOSITA
    3. Kortus, J; Irmer, G; Monecke, J; Pederson, MR
      Influence of cage structures on the vibrational modes and Raman activity of methane

      MODELLING AND SIMULATION IN MATERIALS SCIENCE AND ENGINEERING
    4. Verma, P; Irmer, G; Monecke, J
      Laser power dependence of the photoluminescence from CdSxSe1-x nanoparticles in glass

      JOURNAL OF PHYSICS-CONDENSED MATTER
    5. Monecke, T; Monecke, J; Monch, W; Kempe, U
      Mathematical analysis of rare earth element patterns of fluorites from theEhrenfriedersdorf tin deposit, Germany: evidence for a hydrothermal mixingprocess of lanthanides from two different sources

      MINERALOGY AND PETROLOGY
    6. Tiginyanu, IM; Kravetsky, IV; Marowsky, G; Monecke, J; Hartnagel, HL
      Design of new nonlinear optical materials based on porous III-V compounds

      PHYSICA STATUS SOLIDI B-BASIC RESEARCH
    7. Sarua, A; Gartner, G; Irmer, G; Monecke, J; Tiginyanu, IM; Hartnagel, HL
      Raman and IR-reflectance spectra of porous III-V semiconductor structures

      PHYSICA STATUS SOLIDI A-APPLIED RESEARCH
    8. Irmer, G; Monecke, J; Verma, P; Goerigk, G; Herms, M
      Size analysis of nanocrystals in semiconductor doped silicate glasses withanomalous small-angle x ray and Raman scattering

      JOURNAL OF APPLIED PHYSICS
    9. Sarua, A; Irmer, G; Monecke, J; Tiginyanu, IM; Schwab, C; Grob, JJ; Hartnagel, HL
      Raman spectroscopy of porous and bulk GaP subjected to MeV-ion implantation and annealing

      JOURNAL OF APPLIED PHYSICS
    10. Tiginyanu, IM; Kravetsky, IV; Monecke, J; Cordts, W; Marowsky, G; Hartnagel, HL
      Semiconductor sieves as nonlinear optical materials

      APPLIED PHYSICS LETTERS
    11. Verma, P; Cordts, W; Irmer, G; Monecke, J
      Acoustic vibrations of semiconductor nanocrystals in doped glasses

      PHYSICAL REVIEW B-CONDENSED MATTER
    12. Bairamov, BH; Gurdal, O; Botchkarev, A; Morkoc, H; Irmer, G; Monecke, J
      Direct evidence of tensile strain in wurtzite structure n-GaN layers grownon n-Si(111) using AlN buffer layers

      PHYSICAL REVIEW B-CONDENSED MATTER
    13. Verma, P; Kortus, J; Monecke, J; Anand, S; Jain, KP
      Phonon sidebands of electronic transitions in Li-doped CdS

      PHYSICAL REVIEW B-CONDENSED MATTER
    14. Sarua, A; Tiginyanu, IM; Ursaki, VV; Irmer, G; Monecke, J; Hartnagel, HL
      Charge carrier distribution in free-standing porous GaP membranes studied by Raman spectroscopy

      SOLID STATE COMMUNICATIONS
    15. BAIRAMOV BK; POLUSHINA IK; RUD YV; RUD VY; SCHUNEMANN PG; OHMER MC; FERNELIUS NC; IRMER G; MONECKE J
      OPTOELECTRONIC EFFECTS IN P-CDGEAS2 SINGLE-CRYSTALS AND STRUCTURES BASED ON THEM

      Physics of the solid state
    16. Irmer, G; Wenzel, M; Monecke, J
      Raman scattering at shallow acceptors in InP

      PHYSICA STATUS SOLIDI B-BASIC RESEARCH
    17. WENZEL M; IRMER G; MONECKE J; SIEGEL W
      DETERMINATION OF THE EFFECTIVE HALL FACTOR IN P-TYPE SEMICONDUCTORS

      Semiconductor science and technology
    18. KORTUS J; MONECKE J
      THEORY OF INCOMPLETELY ISOVALENT DELTA-DOPED SEMICONDUCTORS

      Journal of physics. Condensed matter
    19. IRMER G; MONECKE J; WENZEL M
      THE DIELECTRIC FUNCTION IN P-TYPE III-V SEMICONDUCTORS

      Journal of physics. Condensed matter
    20. BAIRAMOV BH; IRMER G; MONECKE J; NEGODUYKO VK; TOPOROV VV; VOITENKO VA; ZAKHARCHENYA BP
      NONEQUILIBRIUM FLUCTUATIONS OF LIGHT AND HEAVY-HOLE GAS AND OBSERVATION OF ACOUSTIC PLASMA-OSCILLATIONS ASSOCIATED WITH INTER-VALENCE-BAND PHOTOEFFECT IN P-GAAS

      Physica status solidi. b, Basic research
    21. TIGINYANU IM; IRMER G; MONECKE J; VOGT A; HARTNAGEL HL
      POROSITY-INDUCED MODIFICATION OF THE PHONON-SPECTRUM OF N-GAAS

      Semiconductor science and technology
    22. IRMER G; WENZEL M; MONECKE J
      LIGHT-SCATTERING BY A MULTICOMPONENT PLASMA COUPLED WITH LONGITUDINAL-OPTICAL PHONONS - RAMAN-SPECTRA OF P-TYPE GAAS-ZN

      Physical review. B, Condensed matter
    23. MONECKE J
      EXACT PROPERTIES OF THE SELF-ENERGY OF MIXED-CRYSTALS

      Physical review. B, Condensed matter
    24. TIGINYANU IM; IRMER G; MONECKE J; HARTNAGEL HL
      MICRO-RAMAN-SCATTERING STUDY OF SURFACE-RELATED PHONON MODES IN POROUS GAP

      Physical review. B, Condensed matter
    25. WENZEL M; IRMER G; MONECKE J
      ELECTRONIC RAMAN-SPECTRA OF SHALLOW ACCEPTORS IN P-TYPE INP

      Solid state communications
    26. SIEGEL W; SCHULTE S; REICHEL C; KUHNEL G; MONECKE J
      ANOMALOUS TEMPERATURE-DEPENDENCE OF THE HALL-MOBILITY IN UNDOPED BULKGAAS

      Journal of applied physics
    27. SIEGEL W; SCHULTE S; KUHNEL G; MONECKE J
      HALL-MOBILITY LOWERING IN UNDOPED N-TYPE BULK GAAS DUE TO CELLULAR-STRUCTURE RELATED NONUNIFORMITIES

      Journal of applied physics
    28. WENZEL M; IRMER G; MONECKE J; SIEGEL W
      HOLE MOBILITIES AND THE EFFECTIVE HALL FACTOR IN P-TYPE GAAS

      Journal of applied physics
    29. TIGINYANU IM; SCHWAB C; GROB JJ; PREVOT B; HARTNAGEL HL; VOGT A; IRMER G; MONECKE J
      ION-IMPLANTATION AS A TOOL FOR CONTROLLING THE MORPHOLOGY OF POROUS GALLIUM-PHOSPHIDE

      Applied physics letters
    30. MIAO J; TIGINYANU IM; HARTNAGEL HL; IRMER G; MONECKE J; WEISS BL
      THE CHARACTERISTICS OF HIGH-RESISTANCE LAYERS PRODUCED IN N-GAAS USING MEV-NITROGEN IMPLANTATION FOR 3-DIMENSIONAL STRUCTURING

      Applied physics letters
    31. IRMER G; WENZEL M; MONECKE J
      THE TEMPERATURE-DEPENDENCE OF THE LO(GAMMA) AND TO(GAMMA) PHONONS IN GAAS AND INP

      Physica status solidi. b, Basic research
    32. MONECKE J
      BERGMAN SPECTRAL REPRESENTATION OF A SIMPLE EXPRESSION FOR THE DIELECTRIC RESPONSE OF A SYMMETRICAL 2-COMPONENT COMPOSITE

      Journal of physics. Condensed matter
    33. PAETZOLD O; IRMER G; MONECKE J; TOPOROV VV; BAIRAMOV BH
      QUASI-ELASTIC RAMAN-SCATTERING IN N-TYPE GAAS

      Semiconductor science and technology
    34. KORTUS J; MONECKE J
      FORMATION OF SUBBANDS IN DELTA-DOPED SEMICONDUCTORS

      Physical review. B, Condensed matter
    35. PAETZOLD O; IRMER G; MONECKE J; GRIEHL S; OETTEL O
      MICRO-RAMAN STUDY OF DISLOCATIONS IN N-TYPE DOPED GAAS

      Journal of Raman spectroscopy
    36. MONECKE J; KORTUS J; CORDTS W
      FORMATION OF IMPURITY BANDS IN DOPED SEMICONDUCTORS

      Physical review. B, Condensed matter
    37. IRMER G; HERMS M; MONECKE J; VORLICEK V; GREGORA I
      2ND-ORDER RAMAN-SCATTERING OF LO-PHONON-PLASMON MODES IN GAAS1-XPX

      Solid state communications
    38. IRMER G; SIEGEL W; KUHNEL G; MONECKE J; YASUOKA FMM; BAIRAMOV BH; TOPOROV VV
      DETERMINATION OF THE HOLE CONCENTRATION AND MOBILITY OF P-GAP BY HALLAND BY RAMAN MEASUREMENTS

      Semiconductor science and technology


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Documento generato il 01/06/20 alle ore 15:37:06