Catalogo Articoli (Spogli Riviste)

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La ricerca find articoli where authors phrase all words ' MESLI A' sort by level,fasc_key/DESCEND, pagina_ini_num/ASCEND ha restituito 20 riferimenti
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    1. Mesli, A; Schroter, W; Weber, J
      Containing Papers Presented at the European Materials Research Society 1999 Spring Meeting, Symposium F: Process Induced Defects in Semiconductors, June 1-4, 1999, Strasbourg, France - Preface

      MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY
    2. Fage-Pedersen, J; Larsen, AN; Mesli, A
      Irradiation-induced defects in Ge studied by transient spectroscopies

      PHYSICAL REVIEW B
    3. Weber, J; Mesli, A
      Containing papers presented at the European Materials Research Society 1998 Spring Meeting, Symposium A: Defects in Silicon: Hydrogen, June 16-19, 1998, strasbourg, France - Preface

      MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY
    4. Mesli, A; Larsen, AN
      Vacancy in relaxed p-type Si1-xGex alloys: Evidence for strong disorder induced relaxation

      PHYSICAL REVIEW LETTERS
    5. Pedersen, TPL; Larsen, AN; Mesli, A
      Carbon-related defects in proton-irradiated, n-type epitaxial Si1-xGex

      APPLIED PHYSICS LETTERS
    6. Grenier, B; Verchere, E; Mesli, A; Dubreuil, M; Siao, D; Vandendriessche, M; Cales, J; Maurette, P
      Capnography monitoring during neurosurgery: Reliability in relation to various intraoperative positions

      ANESTHESIA AND ANALGESIA
    7. DEIXLER P; TERRY J; HAWKINS ID; EVANSFREEMAN JH; PEAKER AR; RUBALDO L; MAUDE DK; PORTAL JC; DOBACZEWSKI L; NIELSEN KB; LARSEN AN; MESLI A
      LAPLACE-TRANSFORM DEEP-LEVEL TRANSIENT SPECTROSCOPY STUDIES OF THE G4GOLD-HYDROGEN COMPLEX IN SILICON

      Applied physics letters
    8. MESLI A; KRINGHOJ P; LARSEN AN
      PINNING BEHAVIOR OF GOLD-RELATED LEVELS IN SI USING SI1-XGEX ALLOY LAYERS

      Physical review. B, Condensed matter
    9. LARSEN AN; ORAIFEARTAIGH C; BARKLIE RC; HOLM B; PRIOLO F; FRANZO G; LULLI G; BIANCONI M; NIPOTI R; LINDNER JKN; MESLI A; GROB JJ; CRISTIANO F; HEMMENT PLF
      MEV ION-IMPLANTATION INDUCED DAMAGE IN RELAXED SI1-XGEX

      Journal of applied physics
    10. GRENIER B; MESLI A; CALES J; CASTEL JP; MAURETTE P
      SEVERE HYPERTHERMIA AFTER ACUTE CESSATION OF CONTINUOUS INTRATHECAL BACLOFEN ADMINISTRATION

      Annales francaises d'anesthesie et de reanimation
    11. PRIOLO F; SPINELLA C; ALBERTAZZI E; BIANCONI M; LULLI G; NIPOTI R; LINDNER JKN; MESLI A; BARKLIE RC; SEALY L; HOLM B; LARSEN AN
      ION-IMPLANTATION INDUCED DAMAGE IN RELAXED SI0.75GE0.25

      Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms
    12. SIMON L; FAURE J; MESLI A; HEISER T; GROB JJ; BALLADORE JL
      XTEM AND IR ABSORPTION ANALYSIS OF SILICON-CARBIDE PREPARED BY HIGH-TEMPERATURE CARBON IMPLANTATION IN SILICON

      Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms
    13. HEISER T; MESLI A
      IRON DIFFUSIVITY IN SILICON - IMPACT OF CHARGE-STATE - COMMENT

      Applied physics letters
    14. DIANI M; MESLI A; KUBLER L; CLAVERIE A; BALLADORE JL; AUBEL D; PEYRE S; HEISER T; BISCHOFF JL
      OBSERVATION OF SI OUT-DIFFUSION RELATED DEFECTS IN SIC GROWTH ON SI(001)

      Materials science & engineering. B, Solid-state materials for advanced technology
    15. CLAVERIE A; FAURE J; BALLADORE JL; SIMON L; MESLI A; DIANI M; KUBLER L; AUBEL D
      A PARTICULAR EPITAXIAL SI1-YCY ALLOY GROWTH MODE ON SI(001) EVIDENCEDBY CROSS-SECTIONAL TRANSMISSION ELECTRON-MICROSCOPY

      Journal of crystal growth
    16. DIANI M; KUBLER L; BISCHOFF JL; GROB JJ; PREVOT B; MESLI A
      SYNTHESIS OF EPITAXIAL SI1-YCY ALLOYS ON SI(001) WITH HIGH-LEVEL OF NON-USUAL SUBSTITUTIONAL CARBON INCORPORATION

      Journal of crystal growth
    17. ZAMOUCHE A; HEISER T; MESLI A
      INVESTIGATION OF FAST DIFFUSING IMPURITIES IN SILICON BY A TRANSIENT ION DRIFT METHOD

      Applied physics letters
    18. MESLI A; HEISER T; MULHEIM E
      COPPER DIFFUSIVITY IN SILICON - A REEXAMINATION

      Materials science & engineering. B, Solid-state materials for advanced technology
    19. MONTHEARD JP; MESLI A; BELFKIRA A; RAIHANE M; PHAM QT
      COPOLYMERIZATION OF VINYLIDENE CYANIDE WITH METHACRYLONITRILE AND CYANOVINYLACETATE C-13 NMR-STUDIES OF THEIR STRUCTURE

      Pure and applied chemistry
    20. HEISER T; MESLI A
      DETERMINATION OF THE COPPER DIFFUSION-COEFFICIENT IN SILICON FROM TRANSIENT ION-DRIFT

      Applied physics. A, Solids and surfaces


ASDD Area Sistemi Dipartimentali e Documentali, Università di Bologna, Catalogo delle riviste ed altri periodici
Documento generato il 27/10/20 alle ore 18:45:34