Catalogo Articoli (Spogli Riviste)

HELP
ATTENZIONE: attualmente gli articoli Current Contents (fonte ISI) a partire dall'anno 2002 sono consultabili sulla Risorsa On-Line

Le informazioni sugli articoli di fonte ISI sono coperte da copyright

La ricerca find articoli where authors phrase all words ' Lambers, ES' sort by level,fasc_key/DESCEND, pagina_ini_num/ASCEND ha restituito 55 riferimenti
Selezionare un intervallo

Per ulteriori informazioni selezionare i riferimenti di interesse.

    1. Huang, CH; Li, SS; Shafarman, WN; Chang, CH; Lambers, ES; Rieth, L; Johnson, JW; Kim, S; Stanbery, BJ; Anderson, TJ; Holloway, PH
      Study of Cd-free buffer layers using In-x(OH,S)(y) on CIGS solar cells

      SOLAR ENERGY MATERIALS AND SOLAR CELLS
    2. Baik, KH; Park, PY; Gila, BP; Shin, JH; Abernathy, CR; Norasetthekul, S; Luo, B; Ren, F; Lambers, ES; Pearton, SJ
      Comparison of plasma etch chemistries for MgO

      APPLIED SURFACE SCIENCE
    3. Zhang, AP; Dang, G; Ren, F; Cao, XA; Cho, H; Lambers, ES; Pearton, SJ; Shul, RJ; Zhang, L; Baca, AG; Hickman, R; Van Hove, JM
      High density plasma damage induced in n-GaN Schottky diodes using Cl-2/Ar discharges

      MRS INTERNET JOURNAL OF NITRIDE SEMICONDUCTOR RESEARCH
    4. Craciun, V; Lambers, ES; Bassim, ND; Singh, RK; Craciun, D
      Characteristics of ultraviolet-assisted pulsed-laser-deposited Y2O3 thin films

      JOURNAL OF MATERIALS RESEARCH
    5. Cho, H; Lee, KP; Hahn, YB; Lambers, ES; Pearton, SJ
      Effects of ultraviolet illumination on dry etch rates of NiFe-based magnetic multilayers

      JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS
    6. Jung, KB; Marburger, J; Sharifi, F; Park, YD; Lambers, ES; Pearton, SJ
      Long term stability of dry etched magnetoresistive random access memory elements

      JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS
    7. Hahn, YB; Hays, DC; Cho, H; Jung, KB; Lambers, ES; Abernathy, CR; Pearton, SJ; Hobson, WS; Shul, RJ
      Inductively coupled plasma etching in ICl- and IBr-based chemistries. PartI: GaAs, GaSb, and AlGaAs

      PLASMA CHEMISTRY AND PLASMA PROCESSING
    8. Hahn, YB; Hays, DC; Cho, H; Jung, KB; Lambers, ES; Abernathy, CR; Pearton, SJ; Hobson, WS; Shul, RJ
      Inductively coupled plasma etching in ICl- and IBr-based chemistries. PartII: InP, InSb, InGaP, and InGaAs

      PLASMA CHEMISTRY AND PLASMA PROCESSING
    9. Zhang, AP; Dang, G; Ren, F; Cao, XA; Cho, H; Lambers, ES; Pearton, SJ; Shul, RJ; Zhang, L; Baca, AG; Hickman, R; Van Hove, JM
      Cl-2/Ar high-density-plasma damage in GaN Schottky diodes

      JOURNAL OF THE ELECTROCHEMICAL SOCIETY
    10. Puga-Lambers, M; Lambers, ES; Holloway, PH
      Electron beam oxidation of shallow implants

      MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
    11. Hahn, YB; Lee, JW; Vawter, GA; Shul, RJ; Abernathy, CR; Hays, DC; Lambers, ES; Pearton, SJ
      Reactive ion beam etching of GaAs and related compounds in an inductively coupled plasma of Cl-2-Ar mixture

      JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B
    12. Craciun, V; Howard, J; Lambers, ES; Singh, RK; Craciun, D; Perriere, J
      Low-temperature growth of Y2O3 thin films by ultraviolet-assisted pulsed laser deposition

      APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING
    13. Cho, H; Lee, KP; Hahn, YB; Lambers, ES; Pearton, SJ
      Plasma etching of magnetic multilayers - effect of concurrent UV illumination

      MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY
    14. Jung, KB; Cho, H; Hahn, YB; Hays, DC; Lambers, ES; Park, YD; Feng, T; Childress, JR; Pearton, SJ
      Effect of inert gas additive on Cl-2-based inductively coupled plasma etching of NiFe and NiFeCo

      JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS
    15. Hong, J; Caballero, JA; Lambers, ES; Childress, JR; Pearton, SJ
      Comparison of Cl-2 and F-2 based chemistries for the inductively coupled plasma etching of NiMnSb thin films

      JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS
    16. Cho, H; Auh, KH; Han, J; Shul, RJ; Donovan, SM; Abernathy, CR; Lambers, ES; Ren, F; Pearton, SJ
      UV-photoassisted etching of GaN in KOH

      JOURNAL OF ELECTRONIC MATERIALS
    17. Maeda, T; Lee, JW; Shul, RJ; Han, J; Hong, J; Lambers, ES; Pearton, SJ; Abernathy, CR; Hobson, WS
      Inductively coupled plasma etching of III-V semiconductors in BCl3-based chemistries I. GaAs, GaN, GaP, GaSb and AlGaAs

      APPLIED SURFACE SCIENCE
    18. Maeda, T; Lee, JW; Shul, RJ; Han, J; Hong, J; Lambers, ES; Pearton, SJ; Abernathy, CR; Hobson, WS
      Inductively coupled plasma etching of III-V semiconductors in BCl3-based chemistries - II. InP, InGaAs, InGaAsP, InAs and AlInAs

      APPLIED SURFACE SCIENCE
    19. Cho, H; Jung, KB; Hays, DC; Hahn, YB; Lambers, ES; Feng, T; Park, YD; Childress, JR; Pearton, SJ
      Interhalogen plasma chemistries for dry etch patterning of Ni, Fe, NiFe and NiFeCo thin films

      APPLIED SURFACE SCIENCE
    20. Jung, KB; Cho, H; Hahn, YB; Lambers, ES; Onishi, S; Johnson, D; Hurst, AT; Childress, JR; Park, YD; Pearton, SJ
      Relative merits of Cl-2 and CO/NH3 plasma chemistries for dry etching of magnetic random access memory device elements

      JOURNAL OF APPLIED PHYSICS
    21. Jung, KB; Cho, H; Hahn, YB; Hays, DC; Lambers, ES; Park, YD; Feng, T; Childress, JR; Pearton, SJ
      Comparison of Cl-2/He, Cl-2/Ar, and Cl-2/Xe plasma chemistries for dry etching of NiFe and NiFeCo

      JOURNAL OF THE ELECTROCHEMICAL SOCIETY
    22. Hays, DC; Jung, KB; Hahn, YB; Lambers, ES; Pearton, SJ; Donahue, J; Johnson, D; Shul, RJ
      Comparison of F-2-based gases for high-rate dry etching of Si

      JOURNAL OF THE ELECTROCHEMICAL SOCIETY
    23. Hong, J; Caballero, JA; Lambers, ES; Childress, JR; Pearton, SJ
      Patterning of thin film NiMnSb using inductively coupled plasma etching

      JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B
    24. Hong, J; Lambers, ES; Abernathy, CR; Pearton, SJ; Shul, RJ; Hobson, WS
      Inductively coupled plasma and electron cyclotron resonance plasma etchingof an InGaAlP compound semiconductor system

      CRITICAL REVIEWS IN SOLID STATE AND MATERIALS SCIENCES
    25. HONG J; CABALLERO JA; LAMBERS ES; CHILDRESS JR; PEARTON SJ
      INDUCTIVELY-COUPLED PLASMA ETCH PROCESSES FOR NIMNSB

      Journal of vacuum science & technology. A. Vacuum, surfaces, and films
    26. LEE JW; PATHANGEY B; DAVIDSON MR; HOLLOWAY PH; LAMBERS ES; DAVYDOV B; ANDERSON TJ; PEARTON SJ
      COMPARISON OF PLASMA CHEMISTRIES FOR DRY-ETCHING THIN-FILM ELECTROLUMINESCENT DISPLAY MATERIALS

      Journal of vacuum science & technology. A. Vacuum, surfaces, and films
    27. WANG JJ; LAMBERS ES; PEARTON SJ; OSTLING M; ZETTERLING CM; GROW JM; REN F; SHUL RJ
      INDUCTIVELY-COUPLED PLASMA-ETCHING OF BULK 6H-SIC AND THIN-FILM SICN IN NF3 CHEMISTRIES

      Journal of vacuum science & technology. A. Vacuum, surfaces, and films
    28. HONG J; LEE JW; ABERNATHY CR; LAMBERS ES; PEARTON SJ; SHUL RJ; HOBSON WS
      COMPARISON OF PLASMA CHEMISTRIES FOR INDUCTIVELY-COUPLED PLASMA-ETCHING OF INGAALP ALLOYS

      Journal of vacuum science & technology. A. Vacuum, surfaces, and films
    29. JUNG KB; LAMBERS ES; CHILDRESS JR; PEARTON SJ; JENSON M; HURST AT
      DEVELOPMENT OF ELECTRON-CYCLOTRON-RESONANCE AND INDUCTIVELY-COUPLED PLASMA HIGH-DENSITY PLASMA-ETCHING FOR PATTERNING OF NIFE AND NIFECO

      Journal of vacuum science & technology. A. Vacuum, surfaces, and films
    30. LEE JW; PATHANGEY B; DAVIDSON MR; HOLLOWAY PH; LAMBERS ES; DAVYDOV A; ANDERSON TJ; PEARTON SJ
      ELECTRON-CYCLOTRON-RESONANCE PLASMA-ETCHING OF OXIDES AND SRS AND ZNS-BASED ELECTROLUMINESCENT MATERIALS FOR FLAT-PANEL DISPLAYS

      Journal of vacuum science & technology. A. Vacuum, surfaces, and films
    31. HONG J; LAMBERS ES; ABERNATHY CR; PEARTON SJ; SHUL RJ; HOBSON WS
      INDUCTIVELY-COUPLED PLASMA-ETCHING OF INGAP, ALINP, AND ALGAP IN CL-2AND BCL3 CHEMISTRIES

      Journal of electronic materials
    32. LEE JW; LAMBERS ES; ABERNATHY CR; PEARTON SJ; SHUL RJ; REN F; HOBSON WS; CONSTANTINE C
      INDUCTIVELY-COUPLED PLASMA-ETCHING OF III-V SEMICONDUCTORS IN CL-2-BASED CHEMISTRIES

      Solid-state electronics
    33. WANG JJ; LAMBERS ES; PEARTON SJ; OSTLING M; ZETTERLING CM; GROW JM; REN F
      HIGH-RATE ETCHING OF SIC AND SICN IN NF3 INDUCTIVELY-COUPLED PLASMAS

      Solid-state electronics
    34. Wang, JJ; Lambers, ES; Pearton, SJ; Ostling, M; Zetterling, CM; Grow, JM; Ren, F; Shul, RJ
      ICP etching of SiC

      SOLID-STATE ELECTRONICS
    35. JUNG KB; LAMBERS ES; CHILDRESS JR; PEARTON SJ; JENSON M; HURST AT
      CL-2-BASED INDUCTIVELY-COUPLED PLASMA-ETCHING OF NIFE AND RELATED MATERIALS

      Journal of the Electrochemical Society
    36. LEE JW; HONG J; LAMBERS ES; PEARTON SJ
      IC1 PLASMA-ETCHING OF III-V SEMICONDUCTORS

      Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena
    37. MCDANIEL G; LEE JW; LAMBERS ES; PEARTON SJ; HOLLOWAY PH; REN F; GROW JM; BHASKARAN M; WILSON RG
      COMPARISON OF DRY ETCH CHEMISTRIES FOR SIC

      Journal of vacuum science & technology. A. Vacuum, surfaces, and films
    38. LEE JW; HONG J; LAMBERS ES; ABERNATHY CR; PEARTON SJ; HOBSON WS; REN F
      DRY-ETCHING OF III-V SEMICONDUCTORS IN IBR AR ELECTRON-CYCLOTRON-RESONANCE PLASMAS/

      Journal of electronic materials
    39. LEE JW; HONG J; LAMBERS ES; ABERNATHY CR; PEARTON SJ; HOBSON WS; REN F
      COMPARISON OF DRY-ETCHING OF III-V SEMICONDUCTORS IN ICL AR AND IBR/AR ELECTRON-CYCLOTRON-RESONANCE PLASMAS/

      Journal of electronic materials
    40. LEE JW; HONG J; LAMBERS ES; ABERNATHY CR; PEARTON SJ; HOBSON WS; REN F
      PLASMA-ETCHING OF III-V SEMICONDUCTORS IN BCL3 CHEMISTRIES .1. GAAS AND RELATED-COMPOUNDS

      Plasma chemistry and plasma processing
    41. LEE JW; HONG J; LAMBERS ES; ABERNATHY CR; PEARTON SJ; HOBSON WS; REN F
      PLASMA-ETCHING OF III-V SEMICONDUCTORS IN BCL3 CHEMISTRIES .2. INP AND RELATED-COMPOUNDS

      Plasma chemistry and plasma processing
    42. MILEHAM JR; LEE JW; LAMBERS ES; PEARTON SJ
      DRY-ETCHING OF GASB AND INSB IN CH4 H-2 AR

      Semiconductor science and technology
    43. JUNG KB; LAMBERS ES; CHILDRESS JR; PEARTON SJ; JENSON M; HURST AT
      HIGH-RATE DRY-ETCHING OF NI0.8FE0.2 AND NIFECO

      Applied physics letters
    44. VARTULI CB; PEARTON SJ; ABERNATHY CR; MACKENZIE JD; LAMBERS ES; ZOLPER JC
      HIGH-TEMPERATURE SURFACE DEGRADATION OF III-V NITRIDES

      Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena
    45. LEE JW; HONG J; ABERNATHY CR; LAMBERS ES; PEARTON SJ; HOBSON WS; REN F
      CL-2 AR PLASMA-ETCHING OF BINARY, TERNARY, AND QUATERNARY IN-BASED COMPOUND SEMICONDUCTORS/

      Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena
    46. PEARTON SJ; LEE JW; LAMBERS ES; MILEHAM JR; ABERNATHY CR; HOBSON WS; REN F; SHUL RJ
      HIGH MICROWAVE-POWER ELECTRON-CYCLOTRON-RESONANCE ETCHING OF III-V SEMICONDUCTORS IN CH4 H-2/AR/

      Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena
    47. HONG J; LEE JW; LAMBERS ES; ABERNATHY CR; SANTANA CJ; PEARTON SJ; HOBSON WS; REN F
      DRY-ETCHING OF INGAALP ALLOYS IN CL-2 AR HIGH ION DENSITY PLASMAS/

      Journal of electronic materials
    48. LEE JW; PEARTON SJ; SANTANA CJ; LAMBERS ES; ABERNATHY CR; HOBSON WS; REN F
      DRY-ETCHING OF INGAP AND ALINP IN CH4 H-2 AR

      Plasma chemistry and plasma processing
    49. HONG J; LEE JW; SANTANA CJ; ABERNATHY CR; LAMBERS ES; PEARTON SJ; HOBSON WS; REN F
      COMPARISON OF DRY-ETCHING TECHNIQUES FOR INGAP, ALINP AND ALGAP

      Solid-state electronics
    50. LAMBERS ES; DYKSTAL CN; SEO JM; ROWE JE; HOLLOWAY PH
      ROOM-TEMPERATURE OXIDATION OF NI(110) AT LOW AND ATMOSPHERIC OXYGEN PRESSURES

      Oxidation of metals
    51. LEE JW; HONG J; LAMBERS ES; ABERNATHY CR; PEARTON SJ; HOBSON WS; REN F
      CL-2-BASED DRY-ETCHING OF GAAS, ALGAAS, AND GAP

      Journal of the Electrochemical Society
    52. LEE JW; PEARTON SJ; SANTANA CJ; MILEHAM JR; LAMBERS ES; ABERNATHY CR; REN F; HOBSON WS
      HIGH ION DENSITY PLASMA-ETCHING OF INGAP, ALINP, AND ALGAP IN CH4 H-2/AR/

      Journal of the Electrochemical Society
    53. PEARTON SJ; LEE JW; LAMBERS ES; ABERNATHY CR; REN F; HOBSON WS; SHUL RJ
      COMPARISON OF DRY-ETCHING TECHNIQUES FOR III-V SEMICONDUCTORS IN CH4 H-2/AR PLASMAS/

      Journal of the Electrochemical Society
    54. HONG J; LEE JW; LAMBERS ES; ABERNATHY CR; PEARTON SJ; CONSTANTINE C; HOBSON WS
      COMPARISON OF ICL AND IBR PLASMA CHEMISTRIES FOR ETCHING OF INGAALP ALLOYS

      Journal of the Electrochemical Society
    55. VILJOEN PE; LAMBERS ES; HOLLOWAY PH
      REACTION BETWEEN DIAMOND AND TITANIUM FOR OHMIC CONTACT AND METALLIZATION ADHESION LAYERS

      Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena


ASDD Area Sistemi Dipartimentali e Documentali, Università di Bologna, Catalogo delle riviste ed altri periodici
Documento generato il 13/08/20 alle ore 14:00:05