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1. Lee, ML; Leitz, CW; Cheng, Z; Pitera, AJ; Langdo, T; Currie, MT; Taraschi, G; Fitzgerald, EA; Antoniadis, DA
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   M.L. Lee et al., "Strained Ge channel p-type metal-oxide-semiconductor field-effect transistors grown on Si1-xGex/Si virtual substrates", APPL PHYS L, 79(20), 2001, pp. 3344-3346
2. SIEG RM; RINGEL SA; TING SM; SAMAVEDAM SB; CURRIE M; LANGDO T; FITZGERALD EA
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   R.M. Sieg et al., "TOWARD DEVICE-QUALITY GAAS GROWTH BY MOLECULAR-BEAM EPITAXY ON OFFCUTGE SI1-XGEX/SI SUBSTRATES/", Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 16(3), 1998, pp. 1471-1474
3. KYCIA JB; HONG JI; DAVIS BM; LANGDO T; SEIDMAN DN; HALPERIN WP
   UPT3 CRYSTAL-GROWTH AND CHARACTERIZATION
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   J.B. Kycia et al., "UPT3 CRYSTAL-GROWTH AND CHARACTERIZATION", Czechoslovak journal of Physics, 46, 1996, pp. 775-776