Catalogo Articoli (Spogli Riviste)

HELP
ATTENZIONE: attualmente gli articoli Current Contents (fonte ISI) a partire dall'anno 2002 sono consultabili sulla Risorsa On-Line

Le informazioni sugli articoli di fonte ISI sono coperte da copyright

La ricerca find articoli where authors phrase all words ' Kawarada, H' sort by level,fasc_key/DESCEND, pagina_ini_num/ASCEND ha restituito 63 riferimenti
Selezionare un intervallo

Per ulteriori informazioni selezionare i riferimenti di interesse.

    1. Tanabe, K; Nakazawa, K; Susantyo, J; Kawarada, H; Koizumi, S
      Cathodoluminescence of phosphorus doped (111) homoepitaxial diamond thin films

      DIAMOND AND RELATED MATERIALS
    2. Umezawa, H; Taniuchi, H; Arima, T; Tachiki, M; Kawarada, H
      Potential applications of surface channel diamond field-effect transistors

      DIAMOND AND RELATED MATERIALS
    3. Robertson, J; Kawarada, H; Kohn, E; Sitar, Z
      Proceedings of the 11th European Conference on Diamond, Diamond-like Materials, Carbon Nanotubes, Nitrides and Silicon Carbide (Diamond 2000), Porto,Portugal, 3-8 September 2000 - Preface

      DIAMOND AND RELATED MATERIALS
    4. Taniuchi, H; Umezawa, H; Arima, T; Tachiki, M; Kawarada, H
      High-frequency performance of diamond field-effect transistor

      IEEE ELECTRON DEVICE LETTERS
    5. Kawarada, H; Araki, Y; Sakai, T; Ogawa, T; Umezawa, H
      Electrolyte-solution-gate FETs using diamond surface for biocompatible ionsensors

      PHYSICA STATUS SOLIDI A-APPLIED RESEARCH
    6. Tsugawa, K; Umezawa, H; Kawarada, H
      Characterization of diamond surface-channel metal-semiconductor field-effect transistor with device simulation

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
    7. Taniyama, N; Kudo, M; Matsumoto, O; Kawarada, H
      Diamond deposition on a large-area substrate by plasma-assisted chemical vapor deposition using an antenna-type coaxial microwave plasma generator

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS
    8. Kawarada, H
      Diamond-related research trends in Japan special issue on the 13th DiamondSymposium - Preface

      NEW DIAMOND AND FRONTIER CARBON TECHNOLOGY
    9. Morita, K; Hine, K; Tsugawa, K; Kawarada, H
      Cluster calculations of diamond-SiC and -Si interface structures

      NEW DIAMOND AND FRONTIER CARBON TECHNOLOGY
    10. Seo, H; Tachiki, M; Fukuda, T; Sugata, K; Kawarada, H
      Control of diamond surface properties by AFM

      NEW DIAMOND AND FRONTIER CARBON TECHNOLOGY
    11. Sugata, K; Tachiki, M; Umezawa, H; Fukuda, T; Seo, H; Arima, T; Taniuchi, H; Kawarada, H
      Nanofabrication on the surface of the hydrogen-terminated diamond with thescanning probe microscope and I-V characteristics of the surface conductive layer

      NEW DIAMOND AND FRONTIER CARBON TECHNOLOGY
    12. Tanabe, K; Umezawa, H; Tachiki, M; Kawarada, H
      Oxygen plasma etching of polycrystalline diamond

      NEW DIAMOND AND FRONTIER CARBON TECHNOLOGY
    13. Taniuchi, H; Arima, T; Umezawa, H; Tachiki, M; Tugawa, K; Yamanaka, S; Takeuchi, D; Okushi, H; Kawarada, H
      Cu/CaF2/diamond MISFET utilizing self-aligned gate process

      NEW DIAMOND AND FRONTIER CARBON TECHNOLOGY
    14. Arima, T; Taniuchi, H; Umezawa, H; Tachiki, M; Tsugawa, K; Yamanaka, S; Takeuchi, D; Okushi, H; Kawarada, H
      The reduction of parasitic resistance by improving the diamond FET fabrication process

      NEW DIAMOND AND FRONTIER CARBON TECHNOLOGY
    15. Ohba, Y; Sen, S; Tsugawa, K; Taniuchi, H; Kawarada, H
      Device simulations of diamond surface-channel FETs with quantum transport model

      NEW DIAMOND AND FRONTIER CARBON TECHNOLOGY
    16. Ogawa, T; Araki, Y; Tachiki, M; Kawarada, H
      Diamond ISFET in alkaline solution

      NEW DIAMOND AND FRONTIER CARBON TECHNOLOGY
    17. Robertson, J; Guttler, H; Kawarada, H; Sitar, Z
      Preface - Proceedings of the 10th European Conference on Diamond, Diamond-like Materials, Nitrides and Silicon Carbide (Diamond 1999), Hilton Hotel, Prague, Czech Republic, 12-17 September 1999

      DIAMOND AND RELATED MATERIALS
    18. Tachiki, M; Fukuda, T; Sugata, K; Seo, H; Umezawa, H; Kawarada, H
      Control of adsorbates and conduction on CVD-grown diamond surface, using scanning probe microscope

      APPLIED SURFACE SCIENCE
    19. Kono, S; Goto, T; Abukawa, T; Wild, C; Koidl, P; Kawarada, H
      Surface order evaluation of the heteroepitaxial diamond film grown on an inclined beta-SiC(001)

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
    20. Tachiki, M; Fukuda, T; Sugata, K; Seo, H; Umezawa, H; Kawarada, H
      Nanofabrication on hydrogen-terminated diamond surfaces by atomic force microscope probe-induced oxidation

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
    21. Umezawa, H; Taniuchi, H; Arima, T; Tachiki, M; Tsugawa, K; Yamanaka, S; Takeuchi, D; Okushi, H; Kawarada, H
      Cu/CaF2/diamond metal-insulator-semiconductor field-effect transistor utilizing self-aligned gate fabrication process

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS
    22. Sato, A; Tanabe, K; Egawa, S; Tsubota, T; Morooka, S; Hojyo, J; Maeda, H; Kawarada, H
      Cathodoluminescence of phosphorus-doped {111} homoepitaxial diamond thin films

      NEW DIAMOND AND FRONTIER CARBON TECHNOLOGY
    23. Kitatani, K; Seto, N; Kawarada, H
      Electric properties of interface between H-terminated diamond and electrolyte solution

      NEW DIAMOND AND FRONTIER CARBON TECHNOLOGY
    24. Umezawa, H; Kitatani, K; Kinumura, K; Seto, N; Tsugawa, K; Kawarada, H
      Fabrication of 1 mu m gate diamond FET using self-aligned gate process

      NEW DIAMOND AND FRONTIER CARBON TECHNOLOGY
    25. Tsugawa, K; Kawarada, H
      Device simulations of diamond surface-channel MESFETs

      NEW DIAMOND AND FRONTIER CARBON TECHNOLOGY
    26. Morita, K; Tsugawa, K; Yamamoto, Y; Kawarada, H
      Cluster calculations of diamond-SiC interface structures

      NEW DIAMOND AND FRONTIER CARBON TECHNOLOGY
    27. Takamatsu, R; Satoh, M; Nara, Y; Kawarada, H
      Fundamental study of moving object tracking using local moments

      ELECTRONICS AND COMMUNICATIONS IN JAPAN PART III-FUNDAMENTAL ELECTRONIC SCIENCE
    28. Bonnot, AM; John, P; Kawarada, H; Lettington, AH; Sitar, Z; Zachai, R
      Proceedings of the 9th European Conference on Diamond, Diamond-like Materials, Nitrides and Silicon Carbide (Diamond 1998), Creta Maris Hotel, Crete,Greece - 13-18 September 1998 - Preface

      DIAMOND AND RELATED MATERIALS
    29. Tsugawa, K; Kitatani, K; Noda, H; Hokazono, A; Hirose, K; Tajima, M; Kawarada, H
      High-performance diamond surface-channel field-effect transistors and their operation mechanism

      DIAMOND AND RELATED MATERIALS
    30. Kitatani, K; Umezawa, H; Tsugawa, K; Ueyama, K; Ishikura, T; Yamashita, S; Kawarada, H
      MOSFETs on polished surfaces of polycrystalline diamond

      DIAMOND AND RELATED MATERIALS
    31. Hokazono, A; Tsugawa, K; Umezana, H; Kitatani, K; Kawarada, H
      Surface p-channel metal-oxide-semiconductor field effect transistors fabricated on hydrogen terminated (001) surfaces of diamond

      SOLID-STATE ELECTRONICS
    32. TSUGAWA K; NODA H; HOKAZONO A; KITATANI K; MORITA K; KAWARADA H
      APPLICATION AND DEVICE MODELING OF DIAMOND FET USING SURFACE SEMICONDUCTIVE LAYERS

      Electronics & communications in Japan. Part 2, Electronics
    33. Tsugawa, K; Kitatani, K; Kawarada, H
      Metal-semiconductor field-effect transistors on hydrogen-terminated diamond surfaces

      DIAMOND FILMS AND TECHNOLOGY
    34. SHIKINAMI Y; KAWARADA H
      POTENTIAL APPLICATION OF A TRIAXIAL 3-DIMENSIONAL FABRIC (3-DF) AS ANIMPLANT

      Biomaterials
    35. KAWARADA H; WILD C; HERRES N; KOIDL P; MIZUOCHI Y; HOKAZONO A; NAGASAWA H
      SURFACE-MORPHOLOGY AND SURFACE P-CHANNEL FIELD-EFFECT TRANSISTOR ON THE HETEROEPITAXIAL DIAMOND DEPOSITED ON INCLINED BETA-SIC(001) SURFACES

      Applied physics letters
    36. SATO M; ISHII M; YAMAMOTO Y; TAKAMATSU R; KAWARADA H
      A REMOTE COLLABORATION SYSTEM USING HAND-FORCE VIRTUAL ENVIRONMENT

      Electronics and communications in Japan. Part 3, Fundamental electronic science
    37. NODA H; HOKAZONO A; KAWARADA H
      DEVICE MODELING OF HIGH-PERFORMANCE DIAMOND MESFETS USING P-TYPE SURFACE SEMICONDUCTIVE LAYERS

      DIAMOND AND RELATED MATERIALS
    38. MIZUOCHI Y; NAGASAWA H; KAWARADA H
      SURFACE CHARACTERIZATION OF SMOOTH HETEROEPITAXIAL DIAMOND LAYERS ON BETA-SIC(001)

      DIAMOND AND RELATED MATERIALS
    39. HOKAZONO A; ISHIKURA T; NAKAMURA K; YAMASHITA S; KAWARADA H
      ENHANCEMENT DEPLETION MESFETS OF DIAMOND AND THEIR LOGIC-CIRCUITS/

      DIAMOND AND RELATED MATERIALS
    40. MURAKAMI T; NAKAMURA K; YAMASHITA S; TAKEUCHI S; MURAKAWA M; KAWARADA H
      COMPARATIVE-STUDY OF EXCITONIC RECOMBINATION RADIATION FROM DIAMONDS GROWN BY CVD AND HP HT METHODS/

      DIAMOND AND RELATED MATERIALS
    41. TSUGAWA K; MORITA K; KAWARADA H
      DEVICE SIMULATIONS OF FIELD-EFFECT TRANSISTORS ON HYDROGEN-TERMINATEDDIAMOND SURFACES

      Diamond films and technology
    42. WANG SJ; SATO M; KAWARADA H
      MULTIRESOLUTION MODEL CONSTRUCTION FROM SCATTERED RANGE DATA BY HIERARCHICAL CUBE-BASED SEGMENTATION

      IEICE transactions on information and systems
    43. KAWARADA H; WILD C; HERRES N; LOCHER R; KOIDL P; NAGASAWA H
      HETEROEPITAXIAL GROWTH OF HIGHLY ORIENTED DIAMOND ON CUBIC SILICON-CARBIDE

      Journal of applied physics
    44. HOKAZONO A; KAWARADA H
      ENHANCEMENT DEPLETION SURFACE CHANNEL FIELD-EFFECT TRANSISTORS OF DIAMOND AND THEIR LOGIC-CIRCUITS/

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
    45. KAWARADA H
      HYDROGEN-TERMINATED DIAMOND SURFACES AND INTERFACES

      Surface science reports
    46. WONG KW; LEE ST; KWOK RWM; LAM YW; KAWARADA H
      ELECTRON-AFFINITY AND SURFACE REORDERING OF HOMOEPITAXIAL DIAMOND(100)

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
    47. KAWARADA H; ITOH M; HOKAZONO A
      ELECTRICALLY ISOLATED METAL-SEMICONDUCTOR FIELD-EFFECT TRANSISTORS AND LOGIC-CIRCUITS ON HOMOEPITAXIAL DIAMONDS

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS
    48. KAWARADA H; SASAKI H; SATO A
      SCANNING-TUNNELING-MICROSCOPE OBSERVATION OF THE HOMOEPITAXIAL DIAMOND(001) 2X1 RECONSTRUCTION OBSERVED UNDER ATMOSPHERIC-PRESSURE

      Physical review. B, Condensed matter
    49. LAWSON SC; KANDA H; KIYOTA H; TSUTSUMI T; KAWARADA H
      CATHODOLUMINESCENCE FROM HIGH-PRESSURE SYNTHETIC AND CHEMICAL-VAPOR-DEPOSITED DIAMOND

      Journal of applied physics
    50. SHINOZAWA T; KAWARADA H; TAKEZAKI K; TANAKA H; INOUE K
      PREPARATION OF MONOCLONAL-ANTIBODIES AGAINST PLANARIAN ORGANS AND THEEFFECT OF FIXATIVES

      Hydrobiologia
    51. KAWARADA H; SUESADA T; NAGASAWA H
      HETEROEPITAXIAL GROWTH OF SMOOTH AND CONTINUOUS DIAMOND THIN FILMS ONSILICON SUBSTRATES VIA HIGH-QUALITY SILICON-CARBIDE BUFFER LAYERS

      Applied physics letters
    52. ITOH M; KAWARADA H
      FABRICATION AND CHARACTERIZATION OF METAL-SEMICONDUCTOR FIELD-EFFECT TRANSISTOR UTILIZING DIAMOND SURFACE-CONDUCTIVE LAYER

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
    53. SUESADA T; NAKAMURA N; NAGASAWA H; KAWARADA H
      INITIAL GROWTH OF HETEROEPITAXIAL DIAMOND ON SI(001) SUBSTRATES VIA BETA-SIC BUFFER LAYER

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
    54. KATOH M; KAWARADA H
      HETEROEPITAXIAL GROWTH OF TUNGSTEN CARBIDE FILMS ON W(110) BY PLASMA-ENHANCED CHEMICAL-VAPOR-DEPOSITION

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
    55. KAWARADA H; AOKI M; SASAKI H; TSUGAWA K
      CHARACTERIZATION OF HYDROGEN-TERMINATED CVD DIAMOND SURFACES AND THEIR CONTACT PROPERTIES

      DIAMOND AND RELATED MATERIALS
    56. KAWARADA H; AOKI M; ITO M
      ENHANCEMENT-MODE METAL-SEMICONDUCTOR FIELD-EFFECT TRANSISTORS USING HOMOEPITAXIAL DIAMONDS

      Applied physics letters
    57. KAWARADA H; TSUTSUMI T; HIRAYAMA H; YAMAGUCHI A
      DOMINANT FREE-EXCITON RECOMBINATION RADIATION IN CHEMICAL-VAPOR-DEPOSITED DIAMONDS

      Applied physics letters
    58. YAMAGUCHI A; YAMASHITA S; TSUTSUMI T; KAWARADA H
      TEMPERATURE AND INCIDENT BEAM-CURRENT DEPENDENCE OF DOMINANT FREE-EXCITON RECOMBINATION RADIATION FROM HIGH-PURITY CHEMICAL-VAPOR-DEPOSITION (CVD) DIAMONDS

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS
    59. AOKI M; KAWARADA H
      ELECTRIC PROPERTIES OF METAL DIAMOND INTERFACES UTILIZING HYDROGEN-TERMINATED SURFACES OF HOMOEPITAXIAL DIAMONDS

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS
    60. KATOH M; AOKI M; KAWARADA H
      PLASMA-ENHANCED DIAMOND NUCLEATION ON SI

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS
    61. SASAKI H; AOKI M; KAWARADA H
      REFLECTION ELECTRON-MICROSCOPE AND SCANNING TUNNELING MICROSCOPE OBSERVATIONS OF CVD DIAMOND (001) SURFACES

      DIAMOND AND RELATED MATERIALS
    62. FUKUDA H; UENO T; KAWARADA H; OHDOMARI I
      EFFECT OF DEUTERIUM ANNEAL ON SIO2 SI(100) INTERFACE TRAPS AND ELECTRON-SPIN-RESONANCE SIGNALS OF ULTRATHIN SIO2-FILMS/

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS
    63. SASAKI H; KAWARADA H
      STRUCTURE OF CHEMICAL-VAPOR-DEPOSITED DIAMOND (111) SURFACES BY SCANNING-TUNNELING-MICROSCOPY

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS


ASDD Area Sistemi Dipartimentali e Documentali, Università di Bologna, Catalogo delle riviste ed altri periodici
Documento generato il 26/05/20 alle ore 22:18:50