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La ricerca find articoli where authors phrase all words ' KUBLER L' sort by level,fasc_key/DESCEND, pagina_ini_num/ASCEND ha restituito 44 riferimenti
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    1. Simon, L; Stoffel, M; Sonnet, P; Kubler, L; Stauffer, L; Selloni, A; De Vita, A; Car, R; Pirri, C; Garreau, G; Aubel, D; Bischoff, JL
      Atomic structure of carbon-induced Si(001)c(4X4) reconstruction as a Si-Sihomodimer and C-Si heterodimer network - art. no. 035306

      PHYSICAL REVIEW B
    2. Simon, L; Kubler, L
      The SiO2/6H-SiC(0001) interface: Physico-chemical and crystallographic spectroscopy and X-ray photoelectroni diffraction

      VIDE-SCIENCE TECHNIQUE ET APPLICATIONS
    3. Bischoff, JL; Pirri, C; Dentel, D; Simon, L; Bolmont, D; Kubler, L
      AFM and RHEED study of Ge/Si(001) quantum dot modification by Si capping

      MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY
    4. Sonnet, P; Stauffer, L; Selloni, A; De Vita, A; Car, R; Simon, L; Stoffel, M; Kubler, L
      Energetics of surface and subsurface carbon incorporation in Si(100)

      PHYSICAL REVIEW B
    5. Stoffel, M; Simon, L; Bischoff, JL; Aubel, D; Kubler, L; Castelein, G
      Ge growth mode modification on carbon-induced Si(001)-c(4 x 4) surfaces

      THIN SOLID FILMS
    6. Stoffel, M; Simon, L; Bischoff, JL; Aubel, D; Kubler, L
      MBE Si regrowth on carbon-induced Si(001)-c(4 x 4) reconstructions studiedby RHEED

      THIN SOLID FILMS
    7. Stoffel, M; Simon, L; Aubel, D; Bischoff, JL; Kubler, L
      Carbon-associated Si(001)-c(4 x 4) reconstruction dosed with hydrogen

      SURFACE SCIENCE
    8. Dentel, D; Bischoff, JL; Kubler, L; Ghica, C; Werckmann, J; Deville, JP; Ulhaq-Bouillet, C
      Ge lateral segregation as a dominant alloying mechanism during low kineticSi capping of strained Si1-xGex hut islands

      SURFACE REVIEW AND LETTERS
    9. Simon, L; Kubler, L; Ermolieff, A; Billon, T
      Oxidation of 6H-SiC(0001)

      MICROELECTRONIC ENGINEERING
    10. Simon, L; Kubler, L; Ermolieff, A; Billon, T
      X-ray spectroscopy of the oxidation of 6H-SiC(0001)

      PHYSICAL REVIEW B-CONDENSED MATTER
    11. Simon, L; Bischoff, JL; Kubler, L
      X-ray photoelectron characterization of 6H-SiC(0001)

      PHYSICAL REVIEW B-CONDENSED MATTER
    12. Kubler, L; Simon, L; Bischoff, LL
      Comment on "X-ray photoelectron diffraction study of Si(001)c(4 x 4)-C surface" by Kosugi et al. [Surf. Sci. 412/413 (1998) 125]

      SURFACE SCIENCE
    13. Dentel, D; Bischoff, JL; Kubler, L; Faure, J
      Surface morphology evolutions during the first stages of epitaxial growth of Si on Ge(001): a RHEED study

      JOURNAL OF CRYSTAL GROWTH
    14. Chattopadhyay, S; Bera, LK; Maiti, CK; Ray, SK; Bose, PK; Dentel, D; Kubler, L; Bischoff, JL
      Determination of interface state density of PtSi/strained-Si1-xGex/Si Schottky diodes

      JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS
    15. DENTEL D; KUBLER L; BISCHOFF JL; CHATTOPADHYAY S; BERA LK; RAY SK; MAITI CK
      MOLECULAR-BEAM EPITAXIAL-GROWTH OF STRAINED SI1-XGEX LAYERS ON GRADEDSI1-YGEY FOR PT SILICIDE SCHOTTKY DIODES

      Semiconductor science and technology
    16. Dentel, D; Bischoff, JL; Kubler, L; Bolmont, D
      Role of hydrogen during Si capping of strained Ge or Si1-xGex hut clusters

      THIN SOLID FILMS
    17. BISCHOFF JL; DENTEL D; KUBLER L
      6H-SIC(0001) X-RAY PHOTOELECTRON DIFFRACTION CHARACTERIZATION USED FOR POLARITY DETERMINATION

      Surface science
    18. DENTEL D; BISCHOFF JL; ANGOT T; KUBLER L
      THE INFLUENCE OF HYDROGEN DURING THE GROWTH OF GE FILMS ON SI(001) BYSOLID SOURCE MOLECULAR-BEAM EPITAXY

      Surface science
    19. DENTEL D; BISCHOFF JJ; BOLMONT D; KUBLER L
      REFLECTION HIGH-ENERGY ELECTRON-DIFFRACTION INTENSITY OSCILLATIONS DURING SI GROWTH ON GE(001) BY SOLID SOURCE MOLECULAR-BEAM EPITAXY

      Surface science
    20. DENTEL D; BISCHOFF JL; KUBLER L; WERCKMANN J; ROMEO M
      SURFACE SMOOTHING INDUCED BY EPITAXIAL SI CAPPING OF ROUGH AND STRAINED GE OR SI1-XGEX MORPHOLOGIES - A RHEED AND TEM STUDY

      Journal of crystal growth
    21. KUBLER L; DENTEL D; BISCHOFF JL; GHICA C; ULHAQBOUILLET C; WERCKMANN J
      SI ADATOM SURFACE MIGRATION BIASING BY ELASTIC STRAIN GRADIENTS DURING CAPPING OF GE OR SI1-XGEX HUT ISLANDS

      Applied physics letters
    22. SIMON L; KUBLER L; GROENEN J; BALLADORE JL
      3RD-NEAREST-NEIGHBOR CARBON PAIRS IN EPITAXIAL SI1-YCY ALLOYS - LOCALORDER FOR CARBON IN SILICON CHARACTERIZED BY X-RAY PHOTOELECTRON DIFFRACTION AND RAMAN-SPECTROSCOPY

      Physical review. B, Condensed matter
    23. BREMBILLAPERROT B; BEURRIER D; JACQUEMIN L; KUBLER L; BROUANT B; DEMOULIN S; LUCRON H; DANCHIN N
      INCOMPLETE BUNDLE-BRANCH BLOCK AND ST-SEGMENT ELEVATION - SYNDROME-ASSOCIATED WITH SUSTAINED MONOMORPHIC VENTRICULAR-TACHYCARDIA IN PATIENTS WITH APPARENTLY NORMAL HEART

      Clinical cardiology
    24. SIMON L; FAURE J; KUBLER L; SCHOTT M
      STRESS DRIVEN SPONTANEOUS MESOSCOPIC ALLOY DECOMPOSITION AND ORDERINGALONG STEP BUNCHES DURING EPITAXIAL SI1-YCY ALLOY GROWTH ON SI

      Journal of crystal growth
    25. SIMON L; AUBEL D; KUBLER L; BISCHOFF JL; GEWINNER G; BALLADORE JL
      A C 1S CORE-LEVEL X-RAY PHOTOELECTRON DIFFRACTION CHARACTERIZATION OFSUBSTITUTIONAL CARBON IN EPITAXIAL SI1-YCY ALLOYS GROWN ON SI(111) AND SI(001)

      Journal of applied physics
    26. AUBEL D; KUBLER L; BISCHOFF JL; SIMON L; BOLMONT D
      X-RAY PHOTOELECTRON DIFFRACTION INVESTIGATION OF CE SEGREGATION AND FILM MORPHOLOGY DURING FIRST STAGE HETEROEPITAXY OF SI ON GE(001)

      Applied surface science
    27. SIMON L; KUBLER L; BISCHOFF JL; BOLMONT D; FAURE J; CLAVERIE A; BALLADORE JL
      EPITAXIAL-GROWTH OF SI1-YCY ALLOYS CHARACTERIZED AS SELF-ORGANIZED, ORDERED, NANOMETER-SIZED C-RICH AGGREGATES IN MONOCRYSTALLINE SI

      Physical review. B, Condensed matter
    28. STOEHR M; AUBEL D; JUILLAGUET S; BISCHOFF JL; KUBLER L; BOLMONT D; HAMDANI F; FRAISSE B; FOURCADE R
      PHONON STRAIN-SHIFT COEFFICIENTS OF SI1-XGEX GROWN ON GE(001)

      Physical review. B, Condensed matter
    29. AUBEL D; KUBLER L; BISCHOFF JL; BOLMONT D
      GE SEGREGATION TESTED BY X-RAY PHOTOELECTRON DIFFRACTION AND SURFACE ATOM TITRATION DURING THE FIRST STAGE OF SI HETEROEPITAXY ON GE(001)2 X-1

      Surface science
    30. DIANI M; MESLI A; KUBLER L; CLAVERIE A; BALLADORE JL; AUBEL D; PEYRE S; HEISER T; BISCHOFF JL
      OBSERVATION OF SI OUT-DIFFUSION RELATED DEFECTS IN SIC GROWTH ON SI(001)

      Materials science & engineering. B, Solid-state materials for advanced technology
    31. JUILLAGUET S; KUBLER L; DIANI M; BISCHOFF JL; GEWINNER G; WETZEL P; BECOURT N
      STRONG ELEMENT DEPENDENCE OF C 1S AND SI 2P X-RAY PHOTOELECTRON DIFFRACTION PROFILES FOR IDENTICAL C AND SI LOCAL GEOMETRIES IN BETA-SIC

      Surface science
    32. AUBEL D; DIANI M; KUBLER L; BISCHOFF JL; BOLMONT D
      SELECTIVE THERMAL - AS OPPOSED TO NONSELECTIVE PLASMA - NITRIDATION OF SI-GE RELATED MATERIALS EXAMINED BY IN-SITU PHOTOEMISSION TECHNIQUES

      Journal of non-crystalline solids
    33. CLAVERIE A; FAURE J; BALLADORE JL; SIMON L; MESLI A; DIANI M; KUBLER L; AUBEL D
      A PARTICULAR EPITAXIAL SI1-YCY ALLOY GROWTH MODE ON SI(001) EVIDENCEDBY CROSS-SECTIONAL TRANSMISSION ELECTRON-MICROSCOPY

      Journal of crystal growth
    34. DIANI M; KUBLER L; BISCHOFF JL; GROB JJ; PREVOT B; MESLI A
      SYNTHESIS OF EPITAXIAL SI1-YCY ALLOYS ON SI(001) WITH HIGH-LEVEL OF NON-USUAL SUBSTITUTIONAL CARBON INCORPORATION

      Journal of crystal growth
    35. AUBEL D; DIANI M; STOEHR M; BISCHOFF JL; KUBLER L; BOLMONT D; FRAISSE B; FOURCADE R; MULLER D
      IN-SITU SURFACE TECHNIQUE ANALYSES AND EX-SITU CHARACTERIZATION OF SI1-XGEX EPILAYERS GROWN ON SI(001)-2X1 BY MOLECULAR-BEAM EPITAXY

      Journal de physique. III
    36. AUBEL D; DIANI M; BISCHOFF JL; BOLMONT D; KUBLER L
      STRICT THERMAL NITRIDATION SELECTIVITY BETWEEN SI AND GE USED AS A CHEMICAL PROBE OF THE OUTERMOST LAYER OF SI1-XGEX ALLOYS AND GE SI(001) OR SI/GE(001) HETEROSTRUCTURES/

      Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena
    37. DIANI M; MANSOUR A; KUBLER L; BISCHOFF JL; BOLMONT D
      SEARCH FOR CARBON NITRIDE CNX COMPOUNDS WITH A HIGH-NITROGEN CONTENT BY ELECTRON-CYCLOTRON-RESONANCE PLASMA DEPOSITION

      DIAMOND AND RELATED MATERIALS
    38. DIANI M; MANSOUR A; KUBLER L; BISCHOFF JL; BOLMONT D
      SEARCH FOR CARBON NITRIDE CNX COMPOUNDS WITH A HIGH-NITROGEN CONTENT BY ELECTRON-CYCLOTRON-RESONANCE PLASMA DEPOSITION - REPLY

      DIAMOND AND RELATED MATERIALS
    39. DIANI M; AUBEL D; BISCHOFF JL; KUBLER L; BOLMONT D
      ELECTRON-CYCLOTRON-RESONANCE PLASMA ION-BEAM EFFECTS ON THE FORMATIONOF SIC ON SI(001) CHARACTERIZED BY IN-SITU PHOTOEMISSION

      Thin solid films
    40. LUTZ F; BISCHOFF JL; KUBLER L; BOLMONT D
      AN X-RAY PHOTOELECTRON-SPECTROSCOPY STUDY OF THE THERMAL-OXIDATION AND NITRIDATION OF SI(100)-2X1 BY NO2

      Applied surface science
    41. DIANI M; BISCHOFF JL; KUBLER L; BOLMONT D
      X-RAY PHOTOELECTRON DIFFRACTION OBSERVATION OF BETA-SIC(001) OBTAINEDBY ELECTRON-CYCLOTRON-RESONANCE PLASMA-ASSISTED GROWTH ON SI(001)

      Applied surface science
    42. BISCHOFF JL; KUBLER L; BOLMONT D; SEBENNE CA; LACHARME JP; BONNET JE; HRICOVINI K
      A PHOTOEMISSION-STUDY OF AMMONIA ADSORPTION ON SI(100)2X1 AND SI(111)2X1 SURFACES

      Surface science
    43. DIANI M; AUBEL D; BISCHOFF JL; KUBLER L; BOLMONT D
      THE GE STRANSKI-KRASTANOV GROWTH MODE ON SI(001)(2X1) TESTED BY X-RAYPHOTOELECTRON AND AUGER-ELECTRON DIFFRACTION

      Surface science
    44. DIANI M; BISCHOFF JL; KUBLER L; BOLMONT D
      X-RAY PHOTOELECTRON AND AUGER-ELECTRON DIFFRACTION PROBING OF GE HETEROEPITAXY ON SI (001) 2X1

      Journal of applied physics


ASDD Area Sistemi Dipartimentali e Documentali, Università di Bologna, Catalogo delle riviste ed altri periodici
Documento generato il 26/10/20 alle ore 14:49:53