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La ricerca find articoli where authors phrase all words ' KOLODZEY J' sort by level,fasc_key/DESCEND, pagina_ini_num/ASCEND ha restituito 46 riferimenti
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    1. Adam, T; Kolodzey, J; Swann, CP; Tsao, MW; Rabolt, JF
      The electrical properties of MIS capacitors with ALN gate dielectrics

      APPLIED SURFACE SCIENCE
    2. Roe, KJ; Kolodzey, J; Swann, CP; Tsao, MW; Rabolt, JF; Chen, J; Brandes, GR
      The electrical and optical properties of thin film diamond implanted with silicon

      APPLIED SURFACE SCIENCE
    3. Katulka, G; Roe, K; Kolodzey, J; Eldridge, G; Clarke, RC; Swann, CP; Wilson, RG
      The electrical characteristics of silicon carbide alloyed with germanium

      APPLIED SURFACE SCIENCE
    4. Roe, KJ; Katulka, G; Kolodzey, J; Saddow, SE; Jacobson, D
      Silicon carbide and silicon carbide : germanium heterostructure bipolar transistors

      APPLIED PHYSICS LETTERS
    5. Chen, F; Li, BZ; Sullivan, TD; Gonzalez, CL; Muzzy, CD; Lee, HK; Levy, MD; Dashiell, MW; Kolodzey, J
      Influence of underlying interlevel dielectric films on extrusion formationin aluminum interconnects

      JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B
    6. Dashiell, MW; Kolodzey, J; Boucaud, P; Yam, V; Lourtioz, JM
      Heterostructures of pseudomorphic Ge1-yCy and Ge1-x-ySixCy alloys grown onGe (001) substrates

      JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B
    7. Dashiell, MW; Troeger, RT; Rommel, SL; Adam, TN; Berger, PR; Guedj, C; Kolodzey, J; Seabaugh, AC
      Current-voltage characteristics of high current density silicon Esaki diodes grown by molecular beam epitaxy and the influence of thermal annealing

      IEEE TRANSACTIONS ON ELECTRON DEVICES
    8. Kolodzey, J; Chowdhury, EA; Adam, TN; Qui, GH; Rau, I; Olowolafe, JO; Suehle, JS; Chen, Y
      Electrical conduction and dielectric breakdown in aluminum oxide insulators on silicon

      IEEE TRANSACTIONS ON ELECTRON DEVICES
    9. Roe, KJ; Dashiell, MW; Kolodzey, J; Boucaud, P; Lourtioz, JM
      Molecular beam epitaxy growth of Ge1-yCy alloys on Si (100) with high carbon contents

      JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B
    10. Guedj, C; Kolodzey, J; Hairie, A
      Structure and lattice dynamics of Ge1-yCy alloys using anharmonic Keating modeling

      PHYSICAL REVIEW B-CONDENSED MATTER
    11. Kulik, LV; Guedj, C; Dashiell, MW; Kolodzey, J; Hairie, A
      Phonon spectra of substitutional carbon in Si1-xGex alloys

      PHYSICAL REVIEW B-CONDENSED MATTER
    12. Shao, XP; Jonczyk, R; Dashiell, M; Hits, D; Orner, BA; Khan, AS; Roe, K; Kolodzey, J; Berger, PR; Kaba, M; Barteau, MA; Unruh, KM
      Strain modification in thin Si1-x-yGexCy alloys on (100) Si for formation of high density and uniformly sized quantum dots

      JOURNAL OF APPLIED PHYSICS
    13. Katulka, GL; Kolodzey, J; Olowolafe, J
      Analysis of high-temperature materials for application to electric weapon technology

      IEEE TRANSACTIONS ON MAGNETICS
    14. Duschl, R; Schmidt, OG; Winter, W; Eberl, K; Dashiell, MW; Kolodzey, J; Jin-Phillipp, NY; Phillipp, F
      Growth and thermal stability of pseudomorphic Ge1-yCy/Ge superlattices on Ge(001)

      APPLIED PHYSICS LETTERS
    15. Guedj, C; Kolodzey, J
      Substitutional Ge in 3C-SiC

      APPLIED PHYSICS LETTERS
    16. Katulka, G; Guedj, C; Kolodzey, J; Wilson, RG; Swann, C; Tsao, MW; Rabolt, J
      Electrical and optical properties of Ge-implanted 4H-SiC

      APPLIED PHYSICS LETTERS
    17. Katulka, G; Guedj, C; Kolodzey, J; Wilson, RG; Swann, C; Tsao, MW; Rabolt, J
      Electrical and optical properties of Ge-implanted 4H-SiC (vol 74, pg 540, 1999)

      APPLIED PHYSICS LETTERS
    18. Kolodzey, J; Gauthier-Lafaye, O; Sauvage, S; Perrossier, JL; Boucaud, P; Julien, FH; Lourtioz, JM; Chen, F; Orner, BA; Roe, K; Guedj, C; Wilson, RG; Spear, J
      The effects of composition and doping on the response of GeC-Si photodiodes

      IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS
    19. JONCZYK R; HITS DA; KULIK LV; KOLODZEY J; KABA M; BARTEAU MA
      SIZE DISTRIBUTION OF SIGEC QUANTUM DOTS GROWN ON SI(311) AND SI(001) SURFACES

      Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena
    20. PIPREK J; TROGER T; SCHROTER B; KOLODZEY J; IH CS
      THERMAL-CONDUCTIVITY REDUCTION IN GAAS-ALAS DISTRIBUTED BRAGG REFLECTORS

      IEEE photonics technology letters
    21. CHOWDHURY EA; DASHIELL M; QIU G; OLOWOLAFE JO; JONCZYK R; SMITH D; BARNETT A; KOLODZEY J; UNRUH KM; SWANN CP; SUEHLE J; CHEN YA
      STRUCTURAL, OPTICAL AND ELECTRONIC-PROPERTIES OF OXIDIZED ALN THIN-FILMS AT DIFFERENT TEMPERATURES

      Journal of electronic materials
    22. DASHIELL MW; TROEGER RT; ROE KJ; KHAN AS; ORNER B; OLOWOLAFE JO; BERGER PR; WILSON RG; KOLODZEY J
      ELECTRICAL AND OPTICAL-PROPERTIES OF PHOSPHORUS-DOPED GE1-YCY

      Thin solid films
    23. JUNGE KE; VOSS NR; LANGE R; DOLAN JM; ZOLLNER S; DASHIELL M; HITS DA; ORNER BA; JONCZYK R; KOLODZEY J
      OPTICAL-PROPERTIES AND BAND-STRUCTURE OF GE1-YCY AND GE-RICH SI1-X-YGEXCY ALLOYS

      Thin solid films
    24. GUEDJ C; DASHIELL MW; KULIK L; KOLODZEY J; HAIRIE A
      PRECIPITATION OF BETA-SIC IN SI1-YCY ALLOYS

      Journal of applied physics
    25. ROMMEL SL; DILLON TE; DASHIELL MW; FENG H; KOLODZEY J; BERGER PR; THOMPSON PE; HOBART KD; LAKE R; SEABAUGH AC; KLIMECK G; BLANKS DK
      ROOM-TEMPERATURE OPERATION OF EPITAXIALLY GROWN SI SI0.5GE0.5/SI RESONANT INTERBAND TUNNELING DIODES/

      Applied physics letters
    26. DASHIELL MW; KULIK LV; HITS D; KOLODZEY J; WATSON G
      CARBON INCORPORATION IN SI1-YCY ALLOYS GROWN BY MOLECULAR-BEAM EPITAXY USING A SINGLE SILICON-GRAPHITE SOURCE

      Applied physics letters
    27. KULIK LV; HITS DA; DASHIELL MW; KOLODZEY J
      THE EFFECT OF COMPOSITION ON THE THERMAL-STABILITY OF SI1-X-YGEXCY SIHETEROSTRUCTURES/

      Applied physics letters
    28. SHAO XP; ROMMEL SL; ORNER BA; FENG H; DASHIELL MW; TROEGER RT; KOLODZEY J; BERGER PR; LAURSEN T
      1.3 MU-M PHOTORESPONSIVITY IN SI-BASED GE1-XCX PHOTODIODES

      Applied physics letters
    29. SHAO XP; ROMMEL SL; ORNER BA; KOLODZEY J; BERGER PR
      A P-GE1-XCX N-SI HETEROJUNCTION DIODE CROWN BY MOLECULAR-BEAM EPITAXY/

      IEEE electron device letters
    30. SHAO XP; ROMMEL SL; OMER BA; BERGER PR; KOLODZEY J; UNRUH KM
      LOW-RESISTANCE OHMIC CONTACTS TO P-GE1-XCX ON SI

      IEEE electron device letters
    31. CHEN F; TROGER RT; ROE K; DASHELL MD; JONCZYK R; HOLMES DS; WILSON RG; KOLODZEY J
      ELECTRICAL-PROPERTIES OF SI1-X-YGEXCY AND GE1-YCY ALLOYS

      Journal of electronic materials
    32. KOLODZEY J; CHEN F; ORNER BA; GUERIN D; SHAH SI
      ENERGY-BAND OFFSETS OF SIGEC HETEROJUNCTIONS

      Thin solid films
    33. ORNER BA; KOLODZEY J
      SI1-X-YGEXCY ALLOY BAND STRUCTURES BY LINEAR COMBINATION OF ATOMIC ORBITALS

      Journal of applied physics
    34. KOLODZEY J; CHOWDHURY EA; QUI G; OLOWOLAFE J; SWANN CP; UNRUH KM; SUEHLE J; WILSON RG; ZAVADA JM
      THE EFFECTS OF OXIDATION TEMPERATURE ON THE CAPACITANCE-VOLTAGE CHARACTERISTICS OF OXIDIZED ALN FILMS ON SI

      Applied physics letters
    35. CHOWDHURY EA; KOLODZEY J; OLOWOLAFE JO; QIU G; KATULKA G; HITS D; DASHIELL M; VANDERWEIDE D; SWANN CP; UNRUH KM
      THERMALLY OXIDIZED ALN THIN-FILMS FOR DEVICE INSULATORS

      Applied physics letters
    36. CHEN F; ORNER BA; GUERIN D; KHAN A; BERGER PR; SHAH SI; KOLODZEY J
      CURRENT TRANSPORT CHARACTERISTICS OF SIGEC SI HETEROJUNCTION DIODE/

      IEEE electron device letters
    37. ORNER BA; KHAN A; HITS D; CHEN F; ROE K; PICKETT J; SHAO X; WILSON RG; BERGER PR; KOLODZEY J
      OPTICAL-PROPERTIES OF GE1-YCY ALLOYS

      Journal of electronic materials
    38. CHEN F; WAITE MM; SHAH SI; ORNER BA; IYER SS; KOLODZEY J
      MEASUREMENTS OF THE ENERGY-BAND OFFSETS OF SI1-XGEX SI AND GE1-YCY/GEHETEROJUNCTIONS/

      Applied surface science
    39. ORNER BA; HITS D; KOLODZEY J; GUARIN FJ; POWELL AR; IYER SS
      OPTICAL-ABSORPTION IN ALLOYS OF SI, GE, C, AND SN

      Journal of applied physics
    40. JUNGE KE; LANGE R; DOLAN JM; ZOLLNER S; DASHIELL M; ORNER BA; KOLODZEY J
      DIELECTRIC RESPONSE OF THICK LOW DISLOCATION-DENSITY GE EPILAYERS GROWN ON (001)SI

      Applied physics letters
    41. ORNER BA; OLOWOLAFE J; ROE K; KOLODZEY J; LAURSEN T; MAYER JW; SPEAR J
      BAND-GAP OF GE RICH SI1-X-YGEXCY ALLOYS

      Applied physics letters
    42. KOLODZEY J; ONEIL PA; ZHANG S; ORNER BA; ROE K; UNRUH KM; SWANN CP; WAITE MM
      GROWTH OF GERMANIUM-CARBON ALLOYS ON SILICON SUBSTRATES BY MOLECULAR-BEAM EPITAXY (VOL 67, PG 1865, 1995)

      Applied physics letters
    43. KOLODZEY J; BERGER PR; ORNER BA; HITS D; CHEN F; KHAN A; SHAO X; WAITE MM; SHAH SI; SWANN CP; UNRUH KM
      OPTICAL AND ELECTRONIC-PROPERTIES OF SIGEC ALLOYS GROWN ON SI SUBSTRATE

      Journal of crystal growth
    44. KOLODZEY J; ONEIL PA; ZHANG S; ORNER BA; ROE K; UNRUH KM; SWANN CP; WAITE MM; SHAH SI
      GROWTH OF GERMANIUM-CARBON ALLOYS ON SILICON SUBSTRATES BY MOLECULAR-BEAM EPITAXY

      Applied physics letters
    45. LASKAR J; NOTTENBURG RN; BAQUEDANO JA; LEVI AFJ; KOLODZEY J
      FORWARD TRANSIT DELAY IN IN0.53GA0.47AS HETEROJUNCTION BIPOLAR-TRANSISTORS WITH NONEQUILIBRIUM ELECTRON-TRANSPORT

      I.E.E.E. transactions on electron devices
    46. BIGELOW JM; LASKAR J; KOLODZEY J; LEBURTON JP
      OBSERVATION OF TUNNELING REAL-SPACE TRANSFER IN PSEUDOMORPHIC MODFETSAT T = 300-K

      Semiconductor science and technology


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Documento generato il 21/10/20 alle ore 01:57:52