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La ricerca find articoli where authors phrase all words ' Jaros, M' sort by level,fasc_key/DESCEND, pagina_ini_num/ASCEND ha restituito 57 riferimenti
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    1. Corbin, E; Shaw, MJ; Kitchin, MR; Hagon, JP; Jaros, M
      Systematic study of type II Ga1-xInxSb/InAs superlattices for infra-red detection in the 10-12 mu m wavelength range

      SEMICONDUCTOR SCIENCE AND TECHNOLOGY
    2. Cusack, MA; Briddon, PR; North, SM; Kitchin, MR; Jaros, M
      Si/Ge self-assembled quantum dots for infrared applications

      SEMICONDUCTOR SCIENCE AND TECHNOLOGY
    3. Shaw, MJ; Kitchin, MR; Jaros, M
      Effect of interface localization on elastic scattering in AlSb/InAs superlattice infrared detectors - art. no. 155303

      PHYSICAL REVIEW B
    4. Shaw, MJ; Corbin, EA; Kitchin, MR; Jaros, M
      Structural parameters governing properties of GaInSb/InAs infra-red detectors

      MICROELECTRONICS JOURNAL
    5. Kvasnicka, F; Jaros, M; Gas, B
      New configuration in capillary isotachophoresis-capillary zone electrophoresis coupling

      JOURNAL OF CHROMATOGRAPHY A
    6. Gas, B; Coufal, P; Jaros, M; Muzikar, J; Jelinek, I
      Optimization of background electrolytes for capillary electrophoresis I. Mathematical and computational model

      JOURNAL OF CHROMATOGRAPHY A
    7. Kitchin, MR; Shaw, MJ; Corbin, E; Hagon, JP; Jaros, M
      Optical properties of imperfect strained-layer InAs/Ga1-xInxSb/AlSb superlattices with infrared applications

      PHYSICAL REVIEW B
    8. Shaw, MJ; Corbin, EA; Kitchin, MR; Hagon, JP; Jaros, M
      Quantitative theory of scattering in antimonide-based heterostructures with imperfect interfaces

      JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B
    9. Kitchin, MR; Shaw, MJ; Corbin, E; Hagon, JP; Jaros, M
      Absorption and emission spectra of InAs/Ga1-xInxSb/AlSb nanostructures forinfrared applications

      APPLIED SURFACE SCIENCE
    10. Presting, H; Konle, J; Hepp, M; Kibbel, H; Thonke, K; Sauer, R; Corbin, E; Jaros, M
      Novel mid-infrared silicon/germanium detector concepts

      OPTICAL ENGINEERING
    11. Forst, LS; Hryhorczuk, D; Jaros, M
      A state trauma registry as a tool for occupational injury surveillance

      JOURNAL OF OCCUPATIONAL AND ENVIRONMENTAL MEDICINE
    12. Shaw, MJ; Hagon, JP; Corbin, EA; Jaros, M
      Microscopic description of electronic structure and scattering in disordered antimonide-based heterostructures

      JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B
    13. Shaw, MJ; Jaros, M
      Fundamental physics of strained layer GeSi: Quo vadis?

      GERMANIUM SILICON: PHYSICS AND MATERIALS
    14. SHAW MJ; GOPIR G; BRIDDON PR; JAROS M
      LOCALIZED INTERFACE STATES AND THE OPTICAL-SPECTRA OF ALSB INAS HETEROSTRUCTURES/

      Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena
    15. PRESTING H; HEPP M; KIBBEL H; THONKE K; SAUER R; MAHLEIN M; CABANSKI W; JAROS M
      MIDINFRARED SILICON GERMANIUM BASED PHOTODETECTION/

      Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena
    16. WILLIAMS CJ; CORBIN E; JAROS M; HERBERT DC
      AUGER RECOMBINATION IN STRAINED SIXGE1-XSI SUPERLATTICES

      Physica. B, Condensed matter
    17. CUSACK MA; BRIDDON PR; JAROS M
      ELECTRONIC-STRUCTURE, IMPURITY BINDING-ENERGIES, ABSORPTION-SPECTRA OF INAS GAAS QUANTUM DOTS/

      Physica. B, Condensed matter
    18. JENNER C; CORBIN E; ADDERLEY BM; JAROS M
      INAS GA1-XINXSB AND INAS/AL1-XGAXSB SUPERLATTICES FOR INFRARED APPLICATIONS/

      Semiconductor science and technology
    19. CUSACK MA; JAROS M; BRIDDON PR
      ELECTRONIC-PROPERTIES AND OPTICAL-SPECTRA OF INAS GAAS SELF-ASSEMBLEDQUANTUM DOTS/

      Microelectronic engineering
    20. North, SM; Briddon, PR; Cusack, MA; Jaros, M
      Electronic structure of GaSb/GaAs quantum domes

      PHYSICAL REVIEW B-CONDENSED MATTER
    21. CORBIN E; JAROS M
      OPTIMIZED SIGE SI MULTIPLE-QUANTUM WELLS FOR DETECTOR APPLICATIONS/

      Semiconductor science and technology
    22. ELFARDAG GS; TURTON RJ; HAGON JP; JAROS M
      THE EFFECTS OF INTERFACE DISORDER ON INTERBAND AND INTERSUBBAND TRANSITIONS IN GE-M-SI-N-GE-M STRUCTURES

      Semiconductor science and technology
    23. CUSACK MA; BRIDDON PR; JAROS M
      ABSORPTION-SPECTRA AND OPTICAL-TRANSITIONS IN INAS GAAS SELF-ASSEMBLED QUANTUM DOTS/

      Physical review. B, Condensed matter
    24. SHAW MJ; BRIDDON PR; JAROS M
      NOVEL MICROSCOPIC PROPERTIES AND THE ELECTRONIC-STRUCTURE OF SIGE HETEROSTRUCTURES AND RELATED SYSTEMS

      Thin solid films
    25. CORBIN E; WILLIAMS C; HAGON JP; JAROS M; PRESTING H
      OPTICAL-SPECTRA AND RECOMBINATION IN SI-GE HETEROSTRUCTURES

      Thin solid films
    26. USCHMANN J; PRESTING H; KIBBEL H; THONKE K; SAUER R; CABANSKI W; JAROS M
      IR ABSORPTION AND QUANTUM EFFICIENCY OF HIGHLY P-DOPED SIGE LAYERS

      Thin solid films
    27. CORBIN E; WILLIAMS CJ; WONG KB; TURTON RJ; JAROS M
      OPTICAL-SPECTRA AND AUGER RECOMBINATION IN SIGE SI HETEROSTRUCTURES IN 10 MU-M RANGE OF WAVELENGTHS/

      Superlattices and microstructures
    28. CORBIN E; WILLIAMS CJ; JAROS M
      OPTICAL-SPECTRA AND RECOMBINATION IN SIGE SI HETEROSTRUCTURES FOR INFRARED APPLICATIONS/

      Applied surface science
    29. CUSACK MA; BRIDDON PR; JAROS M
      ELECTRONIC-STRUCTURE OF INAS GAAS SELF-ASSEMBLED QUANTUM DOTS/

      Physical review. B, Condensed matter
    30. SHAW MJ; BRIDDON PR; JAROS M
      ELECTRONIC-STRUCTURE OF IMPERFECT SI GE HETEROSTRUCTURES/

      Physical review. B, Condensed matter
    31. HOSSEINI SA; SHAW MJ; JAROS M
      QUANTITATIVE THEORY OF 3RD-HARMONIC GENERATION IN AN (INAS)(0.7)(GASB)(0.3) (ALSB) SUPERLATTICE/

      Physical review. B, Condensed matter
    32. CORBIN E; WONG KB; JAROS M
      AUGER-FREE SI-SIGE QUANTUM-WELL STRUCTURES FOR INFRARED DETECTION AT 10 MU-M

      Solid-state electronics
    33. HERBERT DC; WILLIAMS CJ; JAROS M
      IMPACT IONIZATION AND NOISE IN SIGE MULTIQUANTUM-WELL STRUCTURES

      Electronics Letters
    34. TURTON RJ; JAROS M
      THE ORIGIN OF ROOM-TEMPERATURE LUMINESCENCE IN SI-GE QUANTUM-WELLS - THE CASE FOR AN INTERFACE LOCALIZATION MODEL

      Applied physics letters
    35. PRESTING H; ZINKE T; SPLETT A; KIBBEL H; JAROS M
      ROOM-TEMPERATURE ELECTROLUMINESCENCE FROM SI GE/SI1-XGEX QUANTUM-WELLDIODES GROWN BY MOLECULAR-BEAM EPITAXY/

      Applied physics letters
    36. JAROS M
      COOL IT

      New scientist
    37. SHAW MJ; BRIDDON PR; JAROS M
      INTERFACE-INDUCED LOCALIZATION IN ALSB INAS HETEROSTRUCTURES/

      Physical review. B, Condensed matter
    38. JAROS M; ELFARDAG G; HAGON JP; TURTON RJ; WONG KB
      OPTIMIZATION AND STABILITY OF OPTICAL-SPECTRA OF NOVEL SI-GE QUANTUM-WELL STRUCTURES IN AN EXTERNAL ELECTRIC-FIELD

      Journal of crystal growth
    39. PRESTING H; ZINKE T; BRUX O; GAIL M; ABSTREITER G; KIBBEL H; JAROS M
      ROOM-TEMPERATURE LUMINESCENCE FROM SI GE SINGLE-QUANTUM-WELL DIODES GROWN BY MOLECULAR-BEAM EPITAXY/

      Journal of crystal growth
    40. CORBIN E; CUSACK M; WONG KB; JAROS M
      ABSORPTION AND RECOMBINATION IN P-TYPE SIGE QUANTUM-WELL STRUCTURES

      Superlattices and microstructures
    41. HAGON JP; TURTON RJ; MILOSZEWSKI AT; ELFARDAG GSM; JAROS M
      THE EFFECT OF AN ELECTRIC-FIELD ON OPTICAL-SPECTRA AND TRANSMISSION IN SI-SI1-XGEX QUANTUM-WELL STRUCTURES

      Superlattices and microstructures
    42. WONG KB; GOPIR GKA; HAGON JP; JAROS M
      ABSORPTION-COEFFICIENT AND ELECTRIC-FIELD-INDUCED LOCALIZATION IN INAS-ALGASB MULTIQUANTUM-WELL STRUCTURES

      Semiconductor science and technology
    43. ADDERLEY BM; JAROS M
      3-LEVEL RESONANT OPTICAL SUSCEPTIBILITY, IN A GAAS-ALAS SUPERLATTICE

      Physica. D
    44. CORBIN E; WONG KB; JAROS M
      ABSORPTION IN P-TYPE SI-SIGE STRAINED-QUANTUM-WELL STRUCTURES

      Physical review. B, Condensed matter
    45. SHAW MJ; JAROS M; XU Z; FAUCHET PM; RELLA CW; RICHMAN BA; SCHWETTMAN HA; WICKS GW
      2ND-HARMONIC GENERATION IN P-TYPE ASYMMETRIC GAAS-ALXGA1-XAS-ALAS SUPERLATTICES DUE TO EXCITATIONS BETWEEN VALENCE MINIBANDS

      Physical review. B, Condensed matter
    46. WONG KB; JAROS M
      DIFFERENCE-FREQUENCY MIXING IN P-TYPE SI-SI1-XGEX HETEROSTRUCTURES VIA INTERSUBBAND NONLINEARITIES IN THE FAR-INFRARED

      Physical review. B, Condensed matter
    47. SHAW MJ; JAROS M
      NORMAL-INCIDENCE LINEAR AND NONLINEAR INFRARED OPTICAL-RESPONSE OF L-VALLEY QUANTUM-WELL STRUCTURES

      Physical review. B, Condensed matter
    48. CUSACK MA; SHAW MJ; JAROS M
      ROLE OF LOCALIZATION IN DETERMINING 2ND-ORDER OPTICAL NONLINEARITIES IN P-TYPE GAAS-ALAS ASYMMETRIC QUANTUM-WELLS

      Physical review. B, Condensed matter
    49. ADDERLEY BM; TURTON RJ; JAROS M
      ABSORPTION-SPECTRA OF PERFECT AND IMPERFECT SI GE SUPERLATTICES/

      Physical review. B, Condensed matter
    50. SHAW MJ; WONG KB; CORBIN E; JAROS M
      GAAS-ALAS AND SI-SIGE QUANTUM-WELL STRUCTURES FOR APPLICATIONS IN NONLINEAR OPTICS

      Solid-state electronics
    51. GILLILAND GD; WOLFORD DJ; BRADLEY JA; KLEM J; JAROS M
      EXCITON TRANSPORT AND LOCALIZATION IN TYPE-II GAAS ALAS SUPERLATTICES/

      Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena
    52. JAROS M; BEAVIS AW; CORBIN E; HAGON JP; TURTON RJ; WONG KB
      EFFECT OF ORDERING, INTERFACE IMPERFECTIONS AND CLUSTERS, AND EXTERNAL ELECTRIC-FIELDS ON OPTICAL-SPECTRA OF SI-SIGE HETEROSTRUCTURES

      Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena
    53. WONG KB; SHAW MJ; JAROS M
      2ND-HARMONIC GENERATION VIA EXCITATIONS BETWEEN VALENCE SUBBANDS IN P-TYPE GAAS-ALAS AND SI-SIGE QUANTUM-WELL STRUCTURES

      Materials science & engineering. B, Solid-state materials for advanced technology
    54. WONG KB; JAROS M; NINNO D
      OPTICAL NONLINEARITIES IN HIGHLY EXCITED SI-SIGE QUANTUM-WELL STRUCTURES

      Semiconductor science and technology
    55. TURTON RJ; JAROS M
      EFFECTS OF INTERFACIAL ORDERING ON THE OPTICAL-PROPERTIES OF SI-GE SUPERLATTICES

      Semiconductor science and technology
    56. JAROS M; BEAVIS AW
      LOCALIZATION AT IMPERFECT INTERFACES AND ITS ROLE IN OPTICAL-SPECTRA OF QUANTUM-WELL STRUCTURES

      Applied physics letters
    57. WONG KB; JAROS M
      OPTICAL-SPECTRA OF A 5-PERIOD SI4-GE6 SUPERLATTICE ON (001) GE SUBSTRATE

      Semiconductor science and technology


ASDD Area Sistemi Dipartimentali e Documentali, Università di Bologna, Catalogo delle riviste ed altri periodici
Documento generato il 04/08/20 alle ore 22:14:12