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    1. Fu, L; Tan, HH; Jagadish, C; Li, N; Li, N; Liu, X; Lu, W; Shen, SC
      Tuning of detection wavelength of quantum-well infrared photodetectors by quantum-well intermixing

      INFRARED PHYSICS & TECHNOLOGY
    2. Deenapanray, PNK; Jagadish, C
      Effect of stress on impurity-free quantum well intermixing

      ELECTROCHEMICAL AND SOLID STATE LETTERS
    3. Deenapanray, PNK; Jagadish, C
      Impurity-free intermixing of GaAs/AlGaAs quantum wells using SiOx capping:Effect of nitrous oxide flow rate

      JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B
    4. Cohen, MI; Allerman, AA; Choquette, KD; Jagadish, C
      Electrically steerable lasers using wide-aperture VCSELs

      IEEE PHOTONICS TECHNOLOGY LETTERS
    5. Dao, LV; Gal, M; Fu, L; Tan, HH; Jagadish, C
      Possibility of improved frequency response from intermixed quantum-well devices

      SUPERLATTICES AND MICROSTRUCTURES
    6. Lu, W; Liu, XQ; Li, ZF; Shen, SC; Zhao, QX; Fu, Y; Willander, M; Tan, HH; Jagadish, C; Zou, J; Cockayne, DJH
      Carrier transfer between V-grooved quantum wire and vertical quantum well

      PHYSICS LETTERS A
    7. Kucheyev, SO; Williams, JS; Zou, J; Jagadish, C; Li, G
      The effects of ion mass, energy, dose, flux and irradiation temperature onimplantation disorder in GaN

      NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS
    8. Kucheyev, SO; Williams, JS; Zou, J; Jagadish, C; Li, G
      High-dose ion implantation into GaN

      NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS
    9. Boudinov, H; de Souza, JP; Jagadish, C
      Electrical isolation of n-type InP by ion bombardment: Dose dependence andthermal stability

      NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS
    10. Gal, M; Wengler, MC; Ilyas, S; Rofii, I; Tan, HH; Jagadish, C
      Measurement of the damage profile of ion-implanted GaAs using an automatedoptical profiler

      NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS
    11. Pellegrino, P; Leveque, P; Lalita, J; Hallen, A; Jagadish, C; Svensson, BG
      Annealing kinetics of vacancy-related defects in low-dose MeV self-ion-implanted n-type silicon - art. no. 195211

      PHYSICAL REVIEW B
    12. Kucheyev, SO; Williams, JS; Jagadish, C; Zou, J; Li, G; Titov, AI
      Effect of ion species on the accumulation of ion-beam damage in GaN - art.no. 035202

      PHYSICAL REVIEW B
    13. Kucheyev, SO; Williams, JS; Zou, J; Bradby, JE; Jagadish, C; Li, G
      Ion-beam-induced reconstruction of amorphous GaN - art. no. 113202

      PHYSICAL REVIEW B
    14. Lederer, MJ; Kolev, V; Luther-Davies, B; Tan, HH; Jagadish, C
      Ion-implanted InGaAs single quantum well semiconductor saturable absorber mirrors for passive mode-locking

      JOURNAL OF PHYSICS D-APPLIED PHYSICS
    15. Li, N; Fu, L; Li, N; Chan, YC; Lu, W; Shen, SC; Tan, HH; Jagadish, C
      The asymmetry in the characteristics of GaAs/AlGaAs quantum well infrared photodetectors

      JOURNAL OF CRYSTAL GROWTH
    16. Liu, XQ; Sasaki, A; Ohno, N; Li, ZF; Lu, W; Shen, SC; Fu, Y; Willander, M; Tan, HH; Jagadish, C
      Evidence of blocking effect on carrier trapping process by necking region in very narrow AlGaAs/GaAs V-grooved quantum wire structure

      JOURNAL OF APPLIED PHYSICS
    17. Wong-Leung, J; Jagadish, C; Conway, MJ; Fitz Gerald, JD
      Effect of implant temperature on secondary defects created by MeV Sn implantation in silicon

      JOURNAL OF APPLIED PHYSICS
    18. Fu, Y; Willander, M; Liu, XQ; Lu, W; Shen, SC; Tan, HH; Jagadish, C; Zou, J; Cockayne, DJH
      Optical transition in infrared photodetector based on V-groove Al0.5Ga0.5As/GaAs multiple quantum wire

      JOURNAL OF APPLIED PHYSICS
    19. Boudinov, H; Tan, HH; Jagadish, C
      Electrical isolation of n-type and p-type InP layers by proton bombardment

      JOURNAL OF APPLIED PHYSICS
    20. Deenapanray, PNK; Martin, A; Jagadish, C
      Defect engineering in annealed n-type GaAs epilayers using SiO2/Si3N4 stacking layers

      APPLIED PHYSICS LETTERS
    21. Kucheyev, SO; Toth, M; Phillips, MR; Williams, JS; Jagadish, C
      Effects of excitation density on cathodoluminescence from GaN

      APPLIED PHYSICS LETTERS
    22. Boudinov, H; Kucheyev, SO; Williams, JS; Jagadish, C; Li, G
      Electrical isolation of GaN by MeV ion irradiation

      APPLIED PHYSICS LETTERS
    23. Pellegrino, P; Leveque, P; Wong-Leung, J; Jagadish, C; Svensson, BG
      Separation of vacancy and interstitial depth profiles in ion-implanted silicon: Experimental observation

      APPLIED PHYSICS LETTERS
    24. Kucheyev, SO; Bradby, JE; Williams, JS; Jagadish, C; Swain, MV; Li, G
      Deformation behavior of ion-beam-modified GaN

      APPLIED PHYSICS LETTERS
    25. Kucheyev, SO; Williams, JS; Titov, AI; Li, G; Jagadish, C
      Effect of the density of collision cascades on implantation damage in GaN

      APPLIED PHYSICS LETTERS
    26. Giniunas, L; Danielius, R; Tan, HH; Jagadish, C; Adomavicius, R; Krotkus, A
      Electron and trap dynamics in As-ion-implanted and annealed GaAs

      APPLIED PHYSICS LETTERS
    27. Kucheyev, SO; Williams, JS; Zou, J; Jagadish, C; Li, G
      Disordering and anomalous surface erosion of GaN during ion bombardment atelevated temperatures

      APPLIED PHYSICS LETTERS
    28. Fu, L; Tan, HH; Jagadish, C; Li, N; Li, N; Liu, XQ; Lu, W; Shen, SC
      Tuning the detection wavelength of quantum-well infrared photodetectors bysingle high-energy implantation

      APPLIED PHYSICS LETTERS
    29. Kucheyev, SO; Toth, M; Phillips, MR; Williams, JS; Jagadish, C; Li, G
      Cathodoluminescence depth profiling of ion-implanted GaN

      APPLIED PHYSICS LETTERS
    30. Deenapanray, PNK; Tan, HH; Fu, L; Jagadish, C
      Influence of low-temperature chemical vapor deposited SiO2 capping layer porosity on GaAs/AlGaAs quantum well intermixing

      ELECTROCHEMICAL AND SOLID STATE LETTERS
    31. Fu, Y; Willander, M; Lu, W; Liu, XQ; Shen, SC; Jagadish, C; Gal, M; Zou, J; Cockayne, DJH
      Strain effect in a GaAs-In0.25Ga0.75As-Al0.5Ga0.5As asymmetric quantum wire

      PHYSICAL REVIEW B
    32. Kuball, M; Hayes, JM; Suski, T; Jun, J; Tan, HH; Williams, JS; Jagadish, C
      The use of micro-Raman spectroscopy to monitor high-pressure high-temperature annealing of ion-implanted GaN films

      MRS INTERNET JOURNAL OF NITRIDE SEMICONDUCTOR RESEARCH
    33. Wong-Leung, J; Fatima, S; Jagadish, C; FitzGerald, JD
      Effect of implant temperature on extended defects created by ion implantation in silicon

      DEFECTS AND DIFFUSION IN SEMICONDUCTORS
    34. Li, N; Lu, W; Li, N; Liu, XQ; Yuan, XZ; Dou, HF; Shen, XC; Fu, L; Tan, HH; Jagadish, C; Johnston, MB; Gal, M
      Influence on GaAs/AlGaAs quantum well infrared photodetector of proton implantation and rapid thermal annealing

      JOURNAL OF INFRARED AND MILLIMETER WAVES
    35. Li, ZF; Lu, W; Liu, XQ; Shen, XC; Fu, Y; Willander, M; Tan, HH; Jagadish, C
      The micro-photoluminescence of a single V-groove GaAs/AlGaAs quantum wire

      ACTA PHYSICA SINICA
    36. Liu, XQ; Chen, XS; Li, ZF; Lu, W; Shen, SC; Tan, HH; Yuan, S; Jagadish, C
      Proton implantation-induced intermixing effects on AlGaAs/GaAs single QW structures

      PHYSICS LETTERS A
    37. Liu, XQ; Li, ZF; Chen, XS; Lu, W; Shen, SC; Tan, HH; Yuan, S; Jagadish, C
      Arsenic implantation-induced intermixing effects on AlGaAs/GaAs single QW structures

      PHYSICS LETTERS A
    38. Kucheyev, SO; Williams, JS; Jagadish, C; Zou, J; Li, G
      Damage buildup in GaN under ion bombardment

      PHYSICAL REVIEW B
    39. Deenapanray, PNK; Fu, L; Petravic, M; Jagadish, C; Gong, B; Lamb, RN
      Pulsed anodic oxidation of GaAs for impurity-free interdiffusion of GaAs/AlGaAs quantum wells

      SURFACE AND INTERFACE ANALYSIS
    40. Dao, LV; Gal, M; Carmody, C; Tan, HH; Jagadish, C
      A comparison of impurity-free and ion-implantation-induced intermixing of InGaAs/InP quantum wells

      JOURNAL OF APPLIED PHYSICS
    41. Deenapanray, PNK; Tan, HH; Jagadish, C; Auret, FD
      Electronic and isochronal annealing properties of electron traps in rapid thermally annealed SiO2-capped n-type GaAs epitaxial layers

      JOURNAL OF APPLIED PHYSICS
    42. Kucheyev, SO; Williams, JS; Jagadish, C; Zou, J; Li, G
      Polycrystallization and surface erosion of amorphous GaN during elevated temperature ion bombardment

      JOURNAL OF APPLIED PHYSICS
    43. Schmidt, DC; Svensson, BG; Seibt, M; Jagadish, C; Davies, G
      Photoluminescence, deep level transient spectroscopy and transmission electron microscopy measurements on MeV self-ion implanted and annealed n-type silicon

      JOURNAL OF APPLIED PHYSICS
    44. Zhao, QX; Willander, M; Lu, W; Liu, XQ; Shen, SC; Tan, HH; Jagadish, C; Zou, J; Cockayne, DJH
      Optical properties of arsenic ions implanted GaAs/AlGaAs V-grooved quantumwires

      JOURNAL OF APPLIED PHYSICS
    45. Wong-Leung, J; Fatima, S; Jagadish, C; Fitz Gerald, JD; Chou, CT; Zou, J; Cockayne, DJH
      Transmission electron microscopy characterization of secondary defects created by MeV Si, Ge, and Sn implantation in silicon

      JOURNAL OF APPLIED PHYSICS
    46. Dao, LV; Gal, M; Li, G; Jagadish, C
      Photoluminescence in delta-doped InGaAs/GaAs single quantum wells

      JOURNAL OF APPLIED PHYSICS
    47. Kuball, M; Hayes, JM; Suski, T; Jun, J; Leszczynski, M; Domagala, J; Tan, HH; Williams, JS; Jagadish, C
      High-pressure high-temperature annealing of ion-implanted GaN films monitored by visible and ultraviolet micro-Raman scattering

      JOURNAL OF APPLIED PHYSICS
    48. Liu, XQ; Lu, W; Chen, XS; Shen, SC; Tan, HH; Yuan, S; Jagadish, C; Johnston, MB; Dao, LV; Gal, M; Zou, J; Cockayne, DJH
      Wavelength shifting of adjacent quantum wells in V-groove quantum wire structure by selective implantation and annealing

      JOURNAL OF APPLIED PHYSICS
    49. Deenapanray, PNK; Tan, HH; Cohen, MI; Gaff, K; Petravic, M; Jagadish, C
      Silane flow rate dependence of SiOx cap layer induced impurity-free intermixing of GaAs/AlGaAs quantum wells

      JOURNAL OF THE ELECTROCHEMICAL SOCIETY
    50. Toth, M; Kucheyev, SO; Williams, JS; Jagadish, C; Phillips, MR; Li, G
      Imaging charge trap distributions in GaN using environmental scanning electron microscopy

      APPLIED PHYSICS LETTERS
    51. Babinski, A; Siwiec-Matuszyk, J; Baranowski, JM; Li, G; Jagadish, C
      Transport and quantum electron mobility in the modulation Si delta-doped pseudomorphic GaAs/In0.2Ga0.8As/Al0.2Ga0.8As quantum well grown by metalorganic vapor phase epitaxy

      APPLIED PHYSICS LETTERS
    52. Deenapanray, PNK; Tan, HH; Jagadish, C; Auret, FD
      Investigation of deep levels in rapid thermally annealed SiO2-capped n-GaAs grown by metal-organic chemical vapor deposition

      APPLIED PHYSICS LETTERS
    53. Kucheyev, SO; Williams, JS; Zou, J; Jagadish, C; Li, G
      Ion-beam-induced dissociation and bubble formation in GaN

      APPLIED PHYSICS LETTERS
    54. Kucheyev, SO; Bradby, JE; Williams, JS; Jagadish, C; Toth, M; Phillips, MR; Swain, MV
      Nanoindentation of epitaxial GaN films

      APPLIED PHYSICS LETTERS
    55. Hegeler, F; Manasreh, MO; Morath, C; Ballet, P; Yang, H; Salamo, GJ; Tan, HH; Jagadish, C
      Thermal annealing recovery of intersubband transitions in proton-irradiated GaAs/AlGaAs multiple quantum wells

      APPLIED PHYSICS LETTERS
    56. Kucheyev, SO; Williams, JS; Jagadish, C; Zou, J; Craig, VSJ; Li, G
      Ion-beam-induced porosity of GaN

      APPLIED PHYSICS LETTERS
    57. Fu, L; Deenapanray, PNK; Tan, HH; Jagadish, C; Dao, LV; Gal, M
      Quality of silica capping layer and its influence on quantum-well intermixing

      APPLIED PHYSICS LETTERS
    58. Kucheyev, SO; Williams, JS; Jagadish, C; Li, G; Pearton, SJ
      Strong surface disorder and loss of N produced by ion bombardment of GaN

      APPLIED PHYSICS LETTERS
    59. Marcinkevicius, S; Jagadish, C; Tan, HH; Kaminska, M; Korona, K; Adomavicius, R; Krotkus, A
      Influence of annealing on carrier dynamics in As ion-implanted epitaxiallylifted-off GaAs layers

      APPLIED PHYSICS LETTERS
    60. Liu, XQ; Li, N; Li, ZF; Lu, W; Shen, SC; Fu, Y; Willander, M; Tan, HH; Jagadish, C; Zou, J
      Investigation of AlGaAs/GaAs V-grooved quantum wire infrared photodetectorstructures

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
    61. Liu, XQ; Li, N; Lu, W; Li, N; Yuan, XZ; Shen, SC; Fu, L; Tan, HH; Jagadish, C
      Wavelength tuning of GaAs/AlGaAs quantum-well infrared photo-detectors by proton implantation induced intermixing

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
    62. Tan, HH; Yuan, S; Gal, M; Jagadish, C
      Quantum well intermixing by ion implantation and anodic oxidation

      SEMICONDUCTOR QUANTUM WELLS INTERMIXING
    63. Fu, Y; Willander, M; Liu, XQ; Lu, W; Shen, SC; Tan, HH; Yuan, S; Jagadish, C
      Energy sublevels in an Al0.5Ga0.5As/GaAs/Al0.5Ga0.5As quantum wire

      SUPERLATTICES AND MICROSTRUCTURES
    64. Li, N; Li, N; Lu, W; Liu, XQ; Yuan, XZ; Li, ZF; Dou, HF; Shen, SC; Fu, Y; Willander, M; Fu, L; Tan, HH; Jagadish, C; Johnston, MB; Gal, M
      Proton implantation and rapid thermal annealing effects on GaAs/AlGaAs quantum well infrared photodetectors

      SUPERLATTICES AND MICROSTRUCTURES
    65. Lederer, MJ; Luther-Davies, B; Tan, HH; Jagadish, C; Akhmediev, NN; Soto-Crespo, JM
      Multipulse operation of a Ti : sapphire laser mode locked by an ion-implanted semiconductor saturable-absorber mirror

      JOURNAL OF THE OPTICAL SOCIETY OF AMERICA B-OPTICAL PHYSICS
    66. Laird, JS; Bardos, RA; Jagadish, C; Jamieson, DN; Legge, GJF
      Scanning ion deep level transient spectroscopy

      NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS
    67. Zhao, QX; Willander, M; Holtz, PO; Lu, W; Dou, HF; Shen, SC; Li, G; Jagadish, C
      Radiative recombination in p-type delta-doped layers in GaAs

      PHYSICAL REVIEW B-CONDENSED MATTER
    68. Fu, L; Tan, HH; Johnston, MB; Gal, M; Jagadish, C
      Proton irradiation-induced intermixing in InGaAs/(Al)GaAs quantum wells and quantum-well lasers

      JOURNAL OF APPLIED PHYSICS
    69. Fatima, S; Jagadish, C; Lalita, J; Svensson, BG; Hallen, A
      Hydrogen interaction with implantation induced point defects in p-type silicon

      JOURNAL OF APPLIED PHYSICS
    70. Cohen, MI; Tan, HH; Jagadish, C
      Intermixing-induced resonance shift in GaAs/AlxOy distributed Bragg resonators

      JOURNAL OF APPLIED PHYSICS
    71. Iordache, G; Buda, M; Acket, GA; van de Roer, TG; Kaufmann, LMF; Karouta, F; Jagadish, C; Tan, HH
      High power CW output from low confinement asymmetric structure diode laser

      ELECTRONICS LETTERS
    72. Karouta, F; Tan, HH; Jagadish, C; van Roy, BH
      Vertical integration of dual wavelength index guided lasers

      ELECTRONICS LETTERS
    73. Johnston, MB; Gal, M; Li, N; Chen, ZH; Liu, XQ; Li, N; Lu, W; Shen, SC; Fu, L; Tan, HH; Jagadish, C
      Interdiffused quantum-well infrared photodetectors for color sensitive arrays

      APPLIED PHYSICS LETTERS
    74. Manasreh, MO; Ballet, P; Smathers, JB; Salamo, GJ; Jagadish, C
      Proton irradiation effects on the intersubband transition in GaAs/AlGaAs multiple quantum wells with bulk or superlattice barriers

      APPLIED PHYSICS LETTERS
    75. Liu, XQ; Lu, W; Li, ZF; Chen, YD; Shen, SC; Fu, Y; Willander, M; Tan, HH; Yuan, S; Jagadish, C; Zou, J; Cockayne, DJH
      Spatially resolved luminescence investigation of AlGaAs/GaAs single quantum wires modified by selective implantation and annealing

      APPLIED PHYSICS LETTERS
    76. Tan, HH; Jagadish, C; Lederer, MJ; Luther-Davies, B; Zou, J; Cockayne, DJH; Haiml, M; Siegner, U; Keller, U
      Role of implantation-induced defects on the response time of semiconductorsaturable absorbers

      APPLIED PHYSICS LETTERS
    77. Fatima, S; Wong-Leung, J; Gerald, JF; Jagadish, C
      Effect of ion mass on the evolution of extended defects during annealing of MeV ion-implanted p-type Si

      APPLIED PHYSICS LETTERS
    78. Lederer, MJ; Luther-Davies, B; Tan, HH; Jagadish, C; Haiml, M; Siegner, U; Keller, U
      Nonlinear optical absorption and temporal response of arsenic- and oxygen-implanted GaAs

      APPLIED PHYSICS LETTERS
    79. Liu, XQ; Li, N; Chen, XS; Lu, W; Xu, WL; Yuan, XZ; Li, N; Shen, SC; Yuan, S; Tan, HH; Jagadish, C
      Wavelength tuning of GaAs/AlGaAs quantum-well infrared photodetectors by thermal interdiffusion

      JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
    80. YUAN S; JAGADISH C; KIM Y; CHANG Y; TAN HH; COHEN RM; PETRAVIC M; DAO LV; GAL M; CHAN MCY; LI EH; O JS; ZORY PS
      ANODIC-OXIDE-INDUCED INTERMIXING IN GAAS-ALGAAS QUANTUM-WELL AND QUANTUM-WIRE STRUCTURES

      IEEE journal of selected topics in quantum electronics
    81. JAGADISH C; LI G; JOHNSTON MB; GAL M
      SI AND C DELTA-DOPING OF GAAS GROWN BY METAL-ORGANIC VAPOR-PHASE EPITAXY FOR FABRICATION OF NIPI DOPING SUPERLATTICES

      Materials science & engineering. B, Solid-state materials for advanced technology
    82. BABINSKI A; LI G; JAGADISH C
      MAGNETOTRANSPORT MEASUREMENTS ON MODULATION SI DELTA-DOPED PSEUDOMORPHIC IN0.2GA0.8AS GAAS QUANTUM-WELLS/

      Physica. B, Condensed matter
    83. LI G; YUAN S; TAN HH; LIU XQ; CHUA SJ; JAGADISH C
      IN0.2GA0.8AS GAAS QUANTUM-WELL LASER WITH C-DOPED CLADDING AND OHMIC CONTACT LAYERS/

      Journal of electronic materials
    84. ADOMAVICIUS R; KROTKUS A; LEON R; JAGADISH C
      URBACH TAIL IN INP WITH NANOMETER METALLIC PRECIPITATES

      Physica status solidi. a, Applied research
    85. LI G; PRINCE KE; PETRAVIC M; CHUA SJ; JAGADISH C
      SUBSTRATE ORIENTATION EFFECT ON ZN DELTA-DOPING IN GAAS GROWN BY METAL-ORGANIC VAPOR-PHASE EPITAXY

      Journal of crystal growth
    86. Li, G; Johnston, MB; Babinski, A; Yuan, S; Gal, M; Chua, SJ; Jagadish, C
      Si and C delta-doping for device applications

      JOURNAL OF CRYSTAL GROWTH
    87. YUAN S; KIM Y; TAN HH; JAGADISH C; BURKE PT; DAO LV; GAL M; CHAN MCY; LI EH; ZOU J; CAI DQ; COCKAYNE DJH; COHEN RM
      ANODIC-OXIDE-INDUCED INTERDIFFUSION IN GAAS ALGAAS QUANTUM-WELLS/

      Journal of applied physics
    88. LEDERER MJ; LUTHERDAVIES B; TAN HH; JAGADISH C
      AN ANTIRESONANT FABRY-PEROT SATURABLE ABSORBER FOR PASSIVE MODE-LOCKING FABRICATED BY METAL-ORGANIC VAPOR-PHASE EPITAXY AND ION-IMPLANTATION DESIGN, CHARACTERIZATION, AND MODE-LOCKING

      IEEE journal of quantum electronics
    89. COHEN RM; LI G; JAGADISH C; BURKE PT; GAL M
      NATIVE DEFECT ENGINEERING OF INTERDIFFUSION USING THERMALLY GROWN OXIDES OF GAAS

      Applied physics letters
    90. BABINSKI A; WYSMOLEK A; TOMASZEWICZ T; BARANOWSKI JM; LEON R; LOBO C; JAGADISH C
      ELECTRICALLY MODULATED PHOTOLUMINESCENCE IN SELF-ORGANIZED INGAAS GAAS QUANTUM DOTS/

      Applied physics letters
    91. FATIMA S; WONGLEUNG J; GERALD JF; JAGADISH C
      ELECTRICAL CHARACTERIZATION OF THE THRESHOLD FLUENCE FOR EXTENDED DEFECT FORMATION IN P-TYPE SILICON IMPLANTED WITH MEV SI IONS

      Applied physics letters
    92. LI G; BABINSKI A; CHUA SJ; JAGADISH C
      ELECTRON-TRANSFER EFFICIENCY OF SI DELTA-MODULATION-DOPED PSEUDOMORPHIC GAAS IN0.2GA0.8AS/ALXGA1-XAS QUANTUM-WELLS/

      Applied physics letters
    93. DAO LV; GAL M; TAN H; JAGADISH C
      CARRIER CAPTURE INTO INGAAS GAAS QUANTUM-WELLS VIA IMPURITY MEDIATED RESONANT-TUNNELING/

      Applied physics letters
    94. Dao, LV; Johnston, MB; Gal, M; Fu, L; Tan, HH; Jagadish, C
      Improved carrier collection in intermixed InGaAs/GaAs quantum wells

      APPLIED PHYSICS LETTERS
    95. JASINSKI J; LILIENTALWEBER Z; WASHBURN J; TAN HH; JAGADISH C; KROTKUS A; MARCINKEVICIUS S; KAMINSKA M
      STRUCTURAL, ELECTRICAL, AND OPTICAL STUDIES OF GAAS IMPLANTED WITH MEV AS OR GA IONS

      Journal of electronic materials
    96. MARCINKEVICIUS S; KROTKUS A; VISELGA R; OLIN U; JAGADISH C
      NONTHERMAL PHOTOEXCITED ELECTRON DISTRIBUTIONS IN NONSTOICHIOMETRIC GAAS

      Semiconductor science and technology
    97. LALITA J; SVENSSON BG; JAGADISH C; HALLEN A
      ANNEALING STUDIES OF POINT-DEFECTS IN LOW-DOSE MEV ION-IMPLANTED SILICON

      Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms
    98. SVENSSON BG; JAGADISH C; HALLEN A; LALITA J
      GENERATION OF VACANCY-TYPE POINT-DEFECTS IN SINGLE COLLISION CASCADESDURING SWIFT-ION BOMBARDMENT OF SILICON

      Physical review. B, Condensed matter
    99. LI G; JAGADISH C
      RECENT PROGRESS IN DELTA-DOPING OF III-V SEMICONDUCTORS GROWN BY METAL-ORGANIC VAPOR-PHASE EPITAXY

      Solid-state electronics
    100. LEON R; SENDEN TJ; KIM Y; JAGADISH C; CLARK A
      NUCLEATION TRANSITIONS FOR INGAAS ISLANDS ON VICINAL (100)-GAAS

      Physical review letters


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Documento generato il 16/01/21 alle ore 04:20:49